US20230132362A9 - Sputtering Target Product And Method For Producing Recycled Sputtering Target Product - Google Patents

Sputtering Target Product And Method For Producing Recycled Sputtering Target Product Download PDF

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US20230132362A9
US20230132362A9 US17/425,386 US202017425386A US2023132362A9 US 20230132362 A9 US20230132362 A9 US 20230132362A9 US 202017425386 A US202017425386 A US 202017425386A US 2023132362 A9 US2023132362 A9 US 2023132362A9
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Prior art keywords
target
insert material
backing plate
target product
covered
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US12054822B2 (en
US20220098723A1 (en
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Kengo Kaminaga
Keijiro Sugimoto
Yuki Yamada
Shuhei Murata
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Jx Advanced Metals Corp
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JX Nippon Mining and Metals Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Definitions

  • the disclosure is related to a sputtering target product and a method for producing a recycled sputtering target product.
  • a thin coating of metal or ceramic can be formed via, for example, sputtering.
  • An example of a technical field that sputtering can be applied to includes a field of electronics, a field of corrosion-resistant material or decoration, a field of catalyst, a field of making wear-resistant material such as cutting material, and abrasive.
  • Ta sputtering target, etc. which are suitable for coating a complicated shape or for forming a complicated circuit, are utilized especially in the field of electronics.
  • Patent Document 1 and Patent Document 2 disclose inventions that improve the efficiency of a sputtering target usage. Specifically, they disclose that a backing plate comprises tube-shaped recesses and a target insert in the recesses. By reducing the amount of target material to be required, the productivity of a sputtering device is increased, thereby reducing cost.
  • Patent Document 3 discloses a sputtering target product, in which a target of tantalum or tungsten and a backing plate of Cu alloy are bonded by diffusion junction via insert material of aluminum or aluminum alloy with a thickness of 0.5 mm or more
  • Patent Document 4 discloses a sputtering target product, in which a core backing component has some openings corresponding to the deepest erosion groove.
  • Patent Document 1 WO2005/026406 (JP2007-505217A)
  • Patent Document 2 WO2002/099157 (JP 2004-530048A)
  • Patent Document 4 WO2009/023529 (JP2010-537043A)
  • An object of the disclosure is to provide a sputtering target product, of which cost is reduced via a different approach from those of the above-described patent documents.
  • the present inventors intensively studied, and as a result, have focused on the weight of a sputtering target product.
  • a component of a thin coating is relatively heavy in its specific weight such as heavy metal, etc.
  • the weight of a sputtering target product is large. That means the cost of transferring increases, and such heavy weight makes the handling of this difficult.
  • a part of a target which includes a component for forming a thin coating, is not necessarily eroded uniformly. Practically, as shown in FIGS. 7 - 9 , a target is eroded so as to form protrusions and recesses that have plane symmetry.
  • a part of a target where an amount of erosion is large needs to be thick accordingly.
  • a part of a target where an amount of erosion is small is thin in target thickness, that will not be problematic.
  • a part of a target where an amount of erosion is small may be thin in target thickness.
  • it can be compensated with light metal that is lighter in its specific weight than those of metal constituting a target. Thereby, a total weight of a product can be reduced.
  • the present invention has been completed in the light of the above and in one aspect, includes the following inventions.
  • a sputtering target product including a target, a backing plate or a backing tube, and insert material layer,
  • the insert material layer is formed so as to adhere closely to the profiled side
  • the insert material is made of metal with specific gravity that is at least less than those of metal constituting the target.
  • a sputtering target product of Invention 1 wherein a melting point of the insert material is lower than those of the target.
  • a sputtering target product of Invention 1 or 2 is a sputtering target product of Invention 1 or 2
  • At least a part of a lateral side of the insert material layer is exposed without being covered by the target or the backing plate or the backing tube.
  • the target is made of Ta or Ta alloy
  • the backing plate or the backing tube is made of Cu or Cu alloy
  • the insert material is made of Al or Al alloy.
  • a sputtering target product of Invention 5 wherein all parts of the non-sputtered side of the target are covered by the insert material.
  • a method for producing a recycled sputtering target product of any one of Inventions 1-6 including:
  • the separating includes any one of:
  • At least a part of a non-sputtered side is profiled such that the non-sputtered side has protrusions and recesses that have plane symmetry, the insert material layer is formed so as to adhere closely to the profiled side, and the insert material consists of metal with specific gravity that is at least less than those of metal constituting the target.
  • FIG. 1 shows variations of profile in one embodiment.
  • FIG. 2 shows that a part of insert material is exposed in one embodiment.
  • the dotted line in FIG. 2 indicates the status of erosion by sputtering.
  • FIG. 3 shows that all of the non-sputtered side of a target is covered by a backing plate.
  • FIG. 4 shows that all of the non-sputtered side of a target is covered by insert material in one embodiment.
  • FIG. 5 shows that all of the non-sputtered side of a target is covered by a backing plate and insert material in one embodiment.
  • FIG. 6 shows that a part of the non-sputtered side of a target is exposed without being covered with a backing plate and insert material.
  • FIG. 7 shows a surface of a target after usage (prior-art).
  • the shape of a target is circular and the line A indicates a plane of symmetry (see FIG. 10 ).
  • the lower figure shows a cross section in which the circular target in the upper figure is cut along the line B.
  • FIG. 8 shows a surface of a target after usage (prior-art).
  • the shape of a target is rectangular and the line A indicates a plane of symmetry (see FIG. 11 ).
  • the lower figure shows a cross section in which the rectangular target in the upper figure is cut along the line B.
  • FIG. 9 shows a surface of a target after usage (prior-art).
  • the shape of a target is tubular and the line A indicates a plane of symmetry (see FIG. 12 ).
  • the lower figure shows a cross section in which the tubular target in the upper figure is cut along the line B.
  • the line A is perpendicular to the long axis of the tube.
  • the line B is parallel to the long axis of the tube.
  • FIG. 10 shows a three-dimensional image of a plane of symmetry corresponding to the line A drawn in FIG. 7 .
  • FIG. 11 shows a three-dimensional image of a plane of symmetry corresponding to the line A drawn in FIG. 8 .
  • FIG. 12 shows a three-dimensional image of a plane of symmetry corresponding to the line A drawn in FIG. 9 .
  • FIG. 13 shows the shape of the recesses of the backing plates.
  • the angle of lateral wall of the recess is defined on the basis of the line perpendicular to the top side of a backing plate. Specifically, if the lateral wall of the recess is parallel to the perpendicular line, the angle is defined to be zero degree. Moreover, if the lateral wall forming the recess constitutes the shape dovetail, the angle is defined to be minus, and if opposite, the angle is defined to be plus. Incidentally, as shown in (C), if the line of the lateral wall is broken, the angle in the point of break is defined to be the angle that the lateral wall forms.
  • the disclosure is related to a sputtering target product.
  • the sputtering target product includes a target, a backing plate or a backing tube, and insert material layer. At least a part of a non-sputtered side of the target is profiled such that the non-sputtered side has protrusions and recesses that have plane symmetry.
  • profiled means that the surface is formed or processed (e.g., molding, grinding, cutting, etc.) such that it has a certain shape.
  • Insert material layer is formed so as to adhere closely to the profiled side. Insert material consists of metal with specific gravity that is at least less than those of metal constituting a target.
  • a component of a target may be the same as a component (or a part of components) of a coating to be formed.
  • a component of a target may be selected from, for example, a group consisting of Sc, Ru, Rh, Pd, Re, Ir, Pt, Ta, Cu, Ti, W, Mo, Co, Nb, Zr, and Hf and an alloy containing at least one of them.
  • a component may be Ta or Ta alloy.
  • a shape of a target may be, not particularly limited, tubular, or planary.
  • a planary target may be rectangular or circular.
  • the description is made with an example of a planary target.
  • a target has a sputtered side and a non-sputtered side.
  • a sputtered side is the one where collision of Argon gas etc. occurs during sputtering, and a non-sputtered side is the opposite side of the sputtered side.
  • a non-sputtered side is profiled so as to have protrusions and recesses that have plane symmetry.
  • a plane of symmetry may exist, for example, such that it passes through the center of a target, and such that it is parallel with the direction of thickness of a target. In this context, the direction of thickness is perpendicular to the surface to be sputtered.
  • a non-sputtered side may be profiled such that a pair of the same shapes of protrusions and/or a pair of the same shapes of recesses exists at the same distance from a plane of symmetry.
  • a shape of a target is a disc, and in such a case, a profile is concentric circular.
  • plane symmetry includes the concept of “concentric circular.”
  • a position of a plane of symmetry is the same as the position where a plane passes through the center of the circle.
  • grooves that are formed by the combination of protrusions and recesses are formed in a concentric circular manner.
  • a position of a plane of symmetry meets the following two conditions. The first is that a plane of symmetry passes through the center of a rectangle (for example, an intersection point of two diagonals of the rectangle). The second is that a plane of symmetry is parallel with two sides of the rectangle which are opposite from each other.
  • a shape of a target is rectangular, grooves that are formed by the combination of protrusions and recesses are parallel with a plane of symmetry.
  • a position of a plane of symmetry meets the following two conditions. The first is that a plane of symmetry passes through the center of the longitudinal direction of the tube. The second is that a plane of symmetry is parallel with the direction of radius.
  • a shape of a target is tubular, grooves that are formed by the combination of protrusions and recesses are parallel with a plane of symmetry.
  • the reason why the surface of a target is profiled so as to have protrusions and recesses that have plane symmetry is that distribution of erosion is formed in a plane symmetry manner during sputtering ( FIG. 7 - 9 ).
  • some parts of a target may be prone to be shaved by sputtering and other parts may not, both of which exit alternately and in a plane symmetry manner (see the dotted line in FIG. 2 ).
  • parts of a target may be prone to be shaved by sputtering may be thick, and parts of a target may NOT be prone to be shaved by sputtering may be thin, thereby, improving efficiency of usability of sputtering.
  • plane-symmetric protrusions and recesses of a non-sputtered side of a target can be decided at least on the basis of plane-symmetric protrusions and recesses of a sputtered side, which may be formed depending on sputtering conditions to be applied.
  • a shape of profile may be, not particularly limited, for example, an arbitrary shape of protrusions and recesses as shown (A)-(E) of FIG. 1 .
  • FIG. 1 shows cross sections of targets, the upper side indicates a sputtered side and, the lower side indicates a non-sputtered side.
  • grooves may be rectangular.
  • grooves may be a triangle.
  • grooves may be semi-circular.
  • grooves may be sine-curve.
  • the depth of grooves or the height of mountains may be variable (not uniform).
  • the number of specific gravity of a target may be not particularly limited and may be decided in view of the relation with specific gravity of insert material.
  • the number of specific gravity of a target at room temperature is preferably, at least 2.900 g/cm 3 or more, more preferably at least 12.000 g/cm 3 or more.
  • the upper limit of specific gravity at room temperature is typically 25.000 g/cm 3 or less.
  • the melting point of a target is not particularly limited.
  • the melting point of a target may be decided in view of the relation with the melting point of insert material.
  • the melting point of a target may be 1000 C degrees or more, preferably, 1500 C degrees or more.
  • the upper limit melting point of a target may be, not particularly limited, typically 3500 C degree or less.
  • a backing plate or a backing tube is bonded to a target to support the target.
  • a backing plate or a backing tube may include a water channel therein. Thereby, water may be loaded to the water channel during operation, to cool down a sputtering target as a whole for the purpose of avoiding insert material from being melted and avoiding a target from being separated.
  • a backing plate or a backing tube has two sides, one of which is bonded to a target and/or insert material, and the other of which is opposite therefrom.
  • the side which is bonded to a target and/or insert material may be flat and smooth, alternatively, may include a recess to embed therein a target.
  • a component of a backing plate or a backing tube may be, not particularly limited, Cu, Ti, Mo, or an alloy containing at least one of them (for example, Cu—Ni—Si alloy (for example, C18000, etc.), Cu—Zn alloy, Cu—Cr, alloy), etc.
  • material for a backing plate or a backing tube is the one having high heat conductivity, and from this point of view, Cu is suitable.
  • Insert material is inserted between a target and a backing plate or a backing tube, which combines both of them.
  • Insert material includes at least two parts, one of which contacts with a non-sputtered side of a target, and the other of which contacts with a backing plate or a backing tube.
  • the part which contacts with a non-sputtered side of a target is shaped such that it adheres closely to the profiled surface.
  • the other part of the insert material which contacts with a backing plate or a backing tube may be shaped, not particularly limited, such that it adheres closely to the backing plate or the backing tube.
  • insert material covers all of the parts of a non-sputtered side of a target.
  • the thickness of a thin part may be zero in extreme case (i.e., some parts of a target may contact with a backing plate or a backing tube directly without being mediated by insert material). If the thickness of some parts is zero, insert material may be composed of a plural of blocks ( FIG. 5 ).
  • a component of insert material consists of metal that is lighter in its specific gravity than those of metal constituting a target.
  • all of the metal that accounts for 10 mass percent or more in insert material is lighter by 5 g/cm 3 or more, more preferably 8 g/cm 3 or more, yet more preferably 10 g/cm 3 or more than any metal that accounts for 10 mass percent or more in a target.
  • an amount of difference in specific gravity between metal accounting for 10 mass percent or more in insert material and metal accounting for 10 mass percent or more in a target is not particularly limited, an amount of difference, for example, may be 20 g/cm 3 or less, typically, 15 g/cm 3 or less.
  • a component of a target is Ta (about 16.654 g/cm 3 at room temperature)
  • a component of insert material may be Al (about 2.70 g/cm 3 at room temperature) and/or Zn (about 7.14 g/cm 3 at room temperature), which is lighter than those of metal constituting a target. Because insert material adheres closely to the side being profiled as described above and because a component of insert material consists of metal that is lighter in its specific gravity than those of metal constituting a target, a whole amount of weight of a sputtering target product may be reduced.
  • a typical component may be Al and Zn and an alloy containing at least one of them, etc.
  • a component of insert material at least consists of metal that is lighter in its specific gravity than metal constituting a backing plate or a backing tube.
  • all of the metal that accounts for 10 mass percent or more in insert material is lighter by 5 g/cm 3 or more, more preferably 8 g/cm 3 or more, yet more preferably 10 g/cm 3 or more than any metal that accounts for 10 mass percent or more in a backing plate or a backing tube.
  • an amount of difference in specific gravity between metal accounting for 10 mass percent or more in insert material and metal accounting for 10 mass percent or more in a baking plate or a backing tube is not particularly limited, an amount of difference, for example, may be 20 g/cm 3 or less, typically, 15 g/cm 3 or less.
  • the number of specific gravity of insert material may be not particularly limited and may be decided in view of the relation with specific gravity of a target.
  • the number of specific gravity of insert material at room temperature is preferably, at least 8.000 g/cm 3 or less, more preferably at least 3.000 g/cm 3 or less.
  • the lower limit of the number of specific gravity of insert material at room temperature may be not particularly limited and the preferable lower limit may be typically 1.000 g/cm 3 or more.
  • insert material may be Al (about 2.70 g/cm 3 at room temperature), which is lighter than those of them.
  • a target and a backing plate or a backing tube are bonded to each other by heat treatment, etc. ( FIG. 3 ).
  • a non-sputtered side of a target is profiled and in accordance with this, a part of a backing plate or a backing tube also must be profiled.
  • a component of insert material at least consists of metal that is lighter in its specific gravity than metal constituting a backing plate or a backing tube
  • weight can be made smaller by this comparing the above example to be compared.
  • profiled recesses in a target are filled not with a component of a backing plate or a backing tube, but with a component of insert material, thereby saving the weight.
  • the strength of bond tends to be reduced and thus, separation may occur by physical stimulation during sputtering.
  • a backing plate or a backing tube also need to be profiled, resulting in less efficiency of recycling.
  • the melting point of a component of insert material is lower than those of a target. More preferably, the melting point of a component of insert material is lower than those of a backing plate or a backing tube.
  • a component of a target is Ta and component of a backing plate or a backing tube is Cu (both of the melting points for Ta and Cu is 1000 C degree or more)
  • Al (melting point 660.32 C degree) or Al alloy may be used as a component of insert material.
  • Al of insert material partially becomes alloy together with Cu of a backing plate, resulting in a further decrease of the melting point (though it depends on the ratio of Cu and Al, 548 C degree for example). Thereby, recycle of a sputtering target product becomes easier.
  • the range of melting point of insert material is decided in view of the relation with the melting point of a target (more preferably, in view of the relation with melting points of a target and a backing plate or a backing tube) and may be preferably from 300 C degree to 700 C degree, though not particularly limited.
  • material having a low melting point for insert material can stabilize the strength of bond. This is because material having a low melting point can be flexible under high temperature and high pressure during diffusion bonding, and because it is compatible with a complicated shape. These features are important in view of physical stimulation during sputtering. A sputtered side in a target is exposed to high temperature during sputtering, while a non-sputtered side is cool-downed by water, resulting in warpage deformation. Thus, it is likely to make bonding bad. However, by using material having a low melting point for insert material, it can be compatible with such warpage deformation and as a result, bad boding can be prevented.
  • the strength of bond is not particularly limited, it may be preferably 6 kgf/mm 2 or more, more preferably, 9 kgf/mm 2 or more.
  • the upper limit may be, not particularly limited, typically 30 kgf/mm 2 or less.
  • insert material having a low melting point for insert material is advantageous in view of accuracy for processing that is required for profiling a non-sputtering side.
  • processing for profiling since there is a problem such as ignition error etc. on a sputtered side, processing for profiling must be made with higher accuracy. Meanwhile, since there is not such a problem on a non-sputtered side, processing for profiling may be made with relatively less accuracy.
  • insert material is preferably deformable. Material having a low melting point for insert material can meet the requirement.
  • a component of insert material is material having higher etching rate than those of a target (more preferably, a component of insert material is material having higher etching rate than those of a backing plate and a backing tube).
  • a component of insert material is material having higher etching rate than those of a backing plate and a backing tube.
  • the etching rate of Al or Zn is generally higher than that of Ta.
  • a part of insert material is exposed to outside. Thereby, it is possible to perform etching of insert material.
  • insert material may be melted by etching, thereby easily separating a target from a backing plate or a backing tube.
  • insert material is exposed, even if exposed partially, etching can start from the exposed part.
  • the exposed part exists typically on the lateral side of insert material (i.e., a part other than the part where a target and a backing plate or a backing tube contact with each other).
  • etching rate means the etching rate under 30% nitric acid aqueous solution (although temperature for a solution is not particularly limited, typically 35 C degrees).
  • all parts of a non-sputtered side are covered by insert material ( FIG. 4 ), or covered by both of a backing plate or a backing tube and insert material ( FIG. 5 ).
  • insert material FIG. 4
  • both of a backing plate or a backing tube and insert material FIG. 5
  • all parts of a non-sputtered side of a target are covered by a backing plate or a backing tube with being mediated by insert material.
  • a target and a backing plate may be separated more easily.
  • some parts of a non-sputtered side of a target contact with insert material, and other parts of a non-sputtered side of a target contact with a backing plate or a backing tube.
  • eddy current which is caused by rotation of magnet in magnetron sputtering, may affect adversely. However, if all parts of a non-sputtered side of a target are covered, such an adverse effect can be reduced.
  • the disclosure is related to a method for producing a recycled sputtering target product.
  • the method includes the following steps:
  • the step of separating includes softening or melting insert material by heat treatment.
  • the heat treatment is preferably performed at the temperature near the melting point of insert material (for example, the melting point ⁇ 100 C degree) or higher, and at the temperature lower than those of a target. Thereby, without giving damage to a target, or with minimal damage, both of them can be separated.
  • the heat treatment is preferably performed at the temperature near the melting point of insert material (for example, the melting point ⁇ 100 C degree) or higher, and at the temperature lower than those of a target and a backing plate or a backing tube.
  • the step of separating includes melting insert material by etching treatment. Thereby, without giving damage to a target, or with minimal damage, both of them can be separated.
  • etching rate of insert material is higher than those of a target and a backing plate or a backing tube, without giving damage to a target and a backing plate or a backing tube, or with minimal damage, both of them can be separated
  • a backing plate may include a recess for inserting therein a target.
  • a recess preferably has a shape that does not interfere with pulling out the used target from the recess.
  • an angle that is formed by lateral wall of the recess is preferably zero degree or more (for example, FIGS. 13 (A) and (B)).
  • a shape of a recess does not have a dovetail part ( FIGS. 13 (C) and (D)). Thereby, a used target can be pulled out from a recess of a backing plate smoothly.
  • a new target (including a used target that has been recycled after usage) is bonded again to a backing plate or a backing tube. Thereby, a recycled product for a sputtering target product is completed.
  • Insert material at this time preferably has the same component as those of insert material before recycling.
  • a new target is preferably profiled in its non-sputter side in the same manner as those of a target before recycling.

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US17/425,386 2019-03-28 2020-01-15 Sputtering target product and method for producing recycled sputtering target product Active 2040-12-09 US12054822B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-064775 2019-03-28
JP2019064775 2019-03-28
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CN115255596A (zh) * 2022-09-06 2022-11-01 浙江最成半导体科技有限公司 一种靶材、靶材组件及其制作方法

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WO2020195030A1 (ja) 2020-10-01
CN113272468B (zh) 2023-08-25
JP7385718B2 (ja) 2023-11-22
KR20210092283A (ko) 2021-07-23
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TW202035751A (zh) 2020-10-01
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