CN113278932B - 一种扩散焊接型AlSc合金靶材的一次成型制备方法 - Google Patents
一种扩散焊接型AlSc合金靶材的一次成型制备方法 Download PDFInfo
- Publication number
- CN113278932B CN113278932B CN202011617741.6A CN202011617741A CN113278932B CN 113278932 B CN113278932 B CN 113278932B CN 202011617741 A CN202011617741 A CN 202011617741A CN 113278932 B CN113278932 B CN 113278932B
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- Prior art keywords
- alloy
- back plate
- welding
- target material
- alsc
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D19/00—Casting in, on, or around objects which form part of the product
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011617741.6A CN113278932B (zh) | 2020-12-30 | 2020-12-30 | 一种扩散焊接型AlSc合金靶材的一次成型制备方法 |
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CN202011617741.6A CN113278932B (zh) | 2020-12-30 | 2020-12-30 | 一种扩散焊接型AlSc合金靶材的一次成型制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN113278932A CN113278932A (zh) | 2021-08-20 |
CN113278932B true CN113278932B (zh) | 2022-06-17 |
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CN202011617741.6A Active CN113278932B (zh) | 2020-12-30 | 2020-12-30 | 一种扩散焊接型AlSc合金靶材的一次成型制备方法 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006118044A (ja) * | 1997-12-24 | 2006-05-11 | Toshiba Corp | スパッタリングターゲットの製造方法 |
CN104227219A (zh) * | 2014-07-17 | 2014-12-24 | 有研亿金新材料有限公司 | 一种扩散焊接方法 |
CN105296945A (zh) * | 2015-11-13 | 2016-02-03 | 有研亿金新材料有限公司 | 一种铝合金溅射靶材及其制备方法 |
CN108000057A (zh) * | 2017-10-27 | 2018-05-08 | 包头稀土研究院 | 靶材组件的制造方法 |
WO2020195030A1 (ja) * | 2019-03-28 | 2020-10-01 | Jx金属株式会社 | スパッタリングターゲット製品及びスパッタリングターゲット製品の再生品を製造する方法 |
CN111889869A (zh) * | 2020-07-21 | 2020-11-06 | 有研亿金新材料有限公司 | 一种高纯稀土及合金靶材的焊接方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3554835B2 (ja) * | 1997-08-19 | 2004-08-18 | 株式会社小松製作所 | バッキングプレートの製造方法 |
US20080105542A1 (en) * | 2006-11-08 | 2008-05-08 | Purdy Clifford C | System and method of manufacturing sputtering targets |
KR20130121199A (ko) * | 2011-09-14 | 2013-11-05 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 고순도 구리망간 합금 스퍼터링 타깃 |
-
2020
- 2020-12-30 CN CN202011617741.6A patent/CN113278932B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006118044A (ja) * | 1997-12-24 | 2006-05-11 | Toshiba Corp | スパッタリングターゲットの製造方法 |
CN104227219A (zh) * | 2014-07-17 | 2014-12-24 | 有研亿金新材料有限公司 | 一种扩散焊接方法 |
CN105296945A (zh) * | 2015-11-13 | 2016-02-03 | 有研亿金新材料有限公司 | 一种铝合金溅射靶材及其制备方法 |
CN108000057A (zh) * | 2017-10-27 | 2018-05-08 | 包头稀土研究院 | 靶材组件的制造方法 |
WO2020195030A1 (ja) * | 2019-03-28 | 2020-10-01 | Jx金属株式会社 | スパッタリングターゲット製品及びスパッタリングターゲット製品の再生品を製造する方法 |
CN111889869A (zh) * | 2020-07-21 | 2020-11-06 | 有研亿金新材料有限公司 | 一种高纯稀土及合金靶材的焊接方法 |
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Effective date of registration: 20220701 Address after: 253076 room 911, block a, No. 6596, Dongfanghong East Road, Yuanqiao Town, Dezhou Economic and Technological Development Zone, Shandong Province (Zhongyuan science and technology innovation and entrepreneurship Park) Patentee after: Youyan Yijin new material (Shandong) Co.,Ltd. Patentee after: Youyan Yijin New Material Co., Ltd Address before: No.33 Chaoqian Road, Changping District, Beijing 102200 Patentee before: GRIKIN ADVANCED MATERIALS Co.,Ltd. |