US20230098881A1 - Euv resist underlayer film-forming composition - Google Patents

Euv resist underlayer film-forming composition Download PDF

Info

Publication number
US20230098881A1
US20230098881A1 US17/793,735 US202117793735A US2023098881A1 US 20230098881 A1 US20230098881 A1 US 20230098881A1 US 202117793735 A US202117793735 A US 202117793735A US 2023098881 A1 US2023098881 A1 US 2023098881A1
Authority
US
United States
Prior art keywords
group
underlayer film
euv resist
resist underlayer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
US17/793,735
Other languages
English (en)
Inventor
Shou SHIMIZU
Mamoru Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Assigned to NISSAN CHEMICAL CORPORATION reassignment NISSAN CHEMICAL CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SHIMIZU, SHOU, TAMURA, MAMORU
Publication of US20230098881A1 publication Critical patent/US20230098881A1/en
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/30—Introducing nitrogen atoms or nitrogen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
    • C08F220/36—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate containing oxygen in addition to the carboxy oxygen, e.g. 2-N-morpholinoethyl (meth)acrylate or 2-isocyanatoethyl (meth)acrylate
    • C08F220/365—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate containing oxygen in addition to the carboxy oxygen, e.g. 2-N-morpholinoethyl (meth)acrylate or 2-isocyanatoethyl (meth)acrylate containing further carboxylic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
    • C08F220/325—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals containing glycidyl radical, e.g. glycidyl (meth)acrylate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/55—Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups

Definitions

  • the present invention relates to a composition used in a lithography process in the production of a semiconductor, particularly in the state-of-the-art (ArF, EUV, EB, and the like) lithography process.
  • the present invention relates to a method for producing a substrate having a resist pattern applied with the resist underlayer film, and a method for producing a semiconductor device.
  • Microfabrication is a processing method which includes forming a thin film of photoresist composition on a semiconductor substrate such as silicon wafer, irradiating the film with active beams such as ultraviolet rays through a mask pattern on which a device pattern is drawn, developing this, and then performing etching treatment on the substrate with the obtained photoresist pattern as a protective film, thereby forming micro unevenness corresponding to said pattern on the substrate surface.
  • EUV light wavelength: 13.5 nm
  • EB electron beams
  • EUV light wavelength: 13.5 nm
  • EB electron beams
  • the defects of resist pattern formation due to the influences from the semiconductor substrates and the like have become a major problem.
  • a method of providing a resist underlayer film between the resist and the semiconductor substrate has been widely examined.
  • a method of providing a resist underlayer film between the resist and the semiconductor substrate has been widely examined.
  • Patent Literature 1 discloses an additive for a resist underlayer film-forming composition to increase the adhesion of the resist pattern formed on the resist underlayer film.
  • the properties required for the resist underlayer film include, for example, not intermixing with the resist film formed on the upper layer (insoluble in resist solvent) and a higher dry etching speed than the resist film.
  • the line width of the resist pattern formed is 32 nm or less, and the resist underlayer film for EUV exposure is formed to have a thinner film thickness than the conventional films and then is subjected for use.
  • the resist underlayer film for EUV exposure is formed to have a thinner film thickness than the conventional films and then is subjected for use.
  • a method which uses a solvent, generally an organic solvent, that could dissolve a resist film for removing an unexposed part of the resist film, and leaving the exposed part of the resist film as a resist pattern may be adopted.
  • a solvent generally an organic solvent
  • An object of the present invention is to provide a composition for forming a resist underlayer film capable of forming a desired resist pattern and a resist pattern forming method using the resist underlayer film-forming composition, which allow to solve the above-mentioned problems.
  • the present invention encompasses the followings.
  • An EUV resist underlayer film-forming composition comprising a (meth)acrylic polymer having a basic organic group substituted with a protecting group on a side chain thereof and further comprising an organic solvent, and comprising no polymer other than the (meth)acrylic polymer.
  • the protecting group is selected from a tert-butoxycarbonyl group, a benzyloxycarbonyl group, a 9-fluorenylmethyloxycarbonyl group, a 2,2,2-trichloroethoxycarbonyl group and an allyloxycarbonyl group.
  • R 1 represents a hydrogen atom or a methyl group
  • L represents a divalent linking group
  • X represents an acyloxy group having an amino group substituted with a protecting group or an acyloxy group having a nitrogen-containing heterocyclic ring substituted with a protecting group.
  • the EUV resist underlayer film-forming composition according to any one of [1] to [4], further comprising a crosslinking catalyst.
  • the EUV resist underlayer film-forming composition according to any one of [1] to [5], further comprising a crosslinking agent.
  • An EUV resist underlayer film which is a baked product of an applied film consisting of the EUV resist underlayer film-forming composition according to any one of [1] to [6].
  • a method for producing a patterned substrate comprising:
  • a method for producing a semiconductor device comprising:
  • an EUV resist underlayer film consisting of an EUV resist underlayer film-forming composition according to any one of [1] to [6] on a semiconductor substrate;
  • the EUV resist underlayer film-forming composition of the present invention has a basic organic group substituted with a protecting group on a side chain of a (meth)acrylic polymer and further contains an organic solvent, and the EUV resist underlayer film-forming composition is characterized in that it does not contain polymers other than the above-mentioned (meth)acrylic polymer.
  • the resist underlayer film produced by using the composition of the present application has basic organic groups substituted by protecting groups on the side chain of the (meth)acrylic polymer.
  • the resist underlayer film-forming composition for lithography of the present application by adopting such configuration, can achieve suppression of LWR deterioration and improvement of sensitivity when forming a resist pattern.
  • the EUV resist underlayer film-forming composition of the present application shows a remarkable effect than when using a resist for EUV exposure.
  • FIG. 1 is a scanning microscopic photograph taken from the upper side of the positive type resist pattern for EUV of Example 1.
  • FIG. 2 is a scanning microscopic photograph taken from the upper side of the positive type resist pattern for EUV of Comparative Example 1.
  • FIG. 3 is a scanning microscopic photograph taken from the upper side of the negative type resist pattern for EUV of Example 1.
  • FIG. 4 is a scanning microscopic photograph taken from the upper side of the negative type resist pattern for EUV of Comparative Example 1.
  • the EUV resist underlayer film-forming composition of the present application comprises a (meth)acrylic polymer having a basic organic group substituted with a protecting group on a side chain thereof and further comprises an organic solvent, and the EUV resist underlayer film-forming composition does not comprise any polymer other than the above-mentioned (meth)acrylic polymer.
  • the EUV resist underlayer film-forming composition of the present application contains only a (meth)acrylic polymer that has a basic organic group substituted with a protecting group on the side chain thereof, and does not contain any other polymers.
  • the polymer included in the EUV resist underlayer film-forming composition of the present application is composed only a (meth)acrylic polymer that has a basic organic group substituted with a protecting group on the side chain thereof.
  • (Meth)acrylic polymers generally refer to polymers having a unit structure derived from one or more monomers selected from (meth)acrylic acid, (meth)acrylic esters, and their derivatives.
  • As (meth)acrylic polymers olefin-reacted vinyl polymerization polymer or (meth)acrylic polymer polymerized with a (meth)acrylate compound is particularly desirable.
  • (meth)acrylate compounds mean both acrylate and methacrylate compounds.
  • (meth)acrylic acid means acrylic acid and methacrylic acid.
  • the above-mentioned polymers may be produced by known methods.
  • the above-mentioned polymers may be linear or cross-linked, but are preferably linear.
  • organic solvents contained in the EUV resist underlayer film-forming composition of the present invention include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, propylene glycol, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether acetate, propylene glycol propyl ether acetate, toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, cyclohexanone, cycloheptanone, 4-methyl-2-pentanol, methyl 2-hydroxyisobutyrate, ethyl 2-hydroxyisobutyrate, ethyl ethoxyacetate, 2-hydroxyethyl acetate,
  • propylene glycol monomethyl ether preferred are propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethyl lactate, butyl lactate, and cyclohexanone.
  • propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate are especially preferred.
  • a basic organic group in the present invention refers to a monovalent saturated or unsaturated group containing carbon atoms, hydrogen atoms, and at least one heteroatom (for example, at least one species selected from the group consisting of an oxygen atom, a sulfur atom, and a nitrogen atom), which is basic due to the localization of electrons in the molecular structure caused by the heteroatom.
  • the heteroatoms are at least two species selected from the group consisting of oxygen, sulfur, and nitrogen atoms, or at least one species selected from the group consisting of oxygen and nitrogen atoms, and more preferably are oxygen and nitrogen atoms.
  • the above-mentioned organic group is an acyloxy group having an amino group substituted with a protecting group or an acyloxy group having a nitrogen-containing heterocyclic ring substituted with a protecting group.
  • a protecting group herein refers to a group having such a function that it is bound to the above-mentioned amino group or nitrogen-containing heterocyclic ring to prevent any change during a given chemical reaction, but is subsequently eliminated by a given means to recover the original amino group or nitrogen-containing heterocyclic ring.
  • Suitable protecting groups include carbamate protecting groups such as t-butoxycarbonyl group, benzyloxycarbonyl group, 9-fluorenylmethyloxycarbonyl group, 2,2,2-trichloroethoxycarbonyl group, allyloxycarbonyl group; sulfonamide protecting groups such as tosyl group and nosyl group; imide protecting groups such as phthaloyl group; trifluoroacetyl group and the like.
  • an acyloxy group having an amino group protected with a tert-butoxycarbonyl group or an acyloxy group having a nitrogen-containing heterocyclic ring protected with a tert-butoxycarbonyl group is represented by the following formulas (a) to (j).
  • acyloxy group is represented by “—OC( ⁇ O)—R” (R represents an organic group having an amino group protected with a tert-butoxycarbonyl group or an organic group having a nitrogen-containing heterocyclic ring protected with a tert-butoxycarbonyl group), the tert-butoxycarbonyl group may be abbreviated as “t-Boc” or “Boc”.
  • the above-mentioned protecting group is selected from a tert-butoxycarbonyl group, a benzyloxycarbonyl group, a 9-fluorenylmethyloxycarbonyl group, a 2,2,2-trichloroethoxycarbonyl group, and an allyloxycarbonyl group.
  • a tert-butoxycarbonyl group is preferred.
  • the above-mentioned (meth)acrylic polymer is a polymer having a unit structure represented by the following formula (1).
  • R 1 represents a hydrogen atom or a methyl group
  • L represents a divalent linking group
  • X represents an acyloxy group having an amino group substituted with a protecting group or an acyloxy group having a nitrogen-containing heterocyclic ring substituted with a protecting group.
  • the (meth)acrylic polymer of the present invention has a structural unit represented by formula (1).
  • the (meth)acrylic polymer may be a homopolymer composed of one-component monomer polymerized, or a copolymer composed of two or more component monomers polymerized. However, a homopolymer is preferred.
  • the (meth)acrylic polymer of the present invention may contain one and two or more kinds of (meth)acrylic polymers having a basic organic group substituted with a protecting group on the side chain thereof. However, it contains preferably no more than two kinds, and most preferably only one kind.
  • the divalent linking group represented by L in formula (1) is not particularly limited; but it includes a —C(—O)OR 2 — group, and a phenylene group, wherein R 2 of the —C( ⁇ O)OR 2 — group represents an alkylene group having 1 to 10 carbon atoms, and wherein part of the hydrogen atoms of the alkylene group may be replaced by a hydroxy group or a halogen atom.
  • alkylene groups having 1 to 10 carbon atoms include a methylene group, an ethylene group, an n-propylene group, an isopropylene group, a cyclopropylene group, a n-butylene group, an isobutylene group, a s-butylene group, a t-butylene group, a cyclobutylene group, a 1-methyl-cyclopropylene group, a 2-methyl-cyclopropylene group, an n-pentylene group, a 1-methyl-n-butylene group, a 2-methyl-n-butylene group, a 3-methyl-n-butylene group, a 1,1-dimethyl-n-propylene group, a 1,2-dimethyl-n-propylene group, a 2,2-dimethyl-n-propylene group, a 1-ethyl-n-propylene group, a cyclopentylene group, a 1-methyl-cyclobutylene group,
  • halogen atoms include fluorine atoms, chlorine atoms, bromine atoms and iodine atoms.
  • the meta(acrylic) polymer having the structural unit represented by formula (1) is obtained, for example, by reacting a (meth)acrylic polymer having an epoxy group at a terminal with a monomer that reacts with the epoxy group.
  • monomers include: N-(tert-butoxycarbonyl)glycine, N-(tert-butoxycarbonyl)alanine, N-(tert-butoxycarbonyl)valine, N-(tert-butoxycarbonyl)leucine, N-(tert-butoxycarbonyl)isoleucine, N-(tert-butoxycarbonyl)methionine, N-(tert-butoxycarbonyl)serine, N-(tert-butoxycarbonyl)threonine, N-(tert-butoxycarbonyl)proline, N-(tert-butoxycarbonyl)histidine, N-(tert-butoxycarbonyl)phenylalanine, N-(tert-butoxycarbonyl)t
  • N-(2,2,2-trichloroethoxycarbonyl)glycine N-(2,2,2-trichloroethoxycarbonyl)alanine, N-(2,2,2-trichloroethoxycarbonyl)valine, N-2,2,2-trichloroethoxycarbonyl)lcucine, N-(2,2,2-trichloroethoxycarbonyl)isoleucine, N-(2,2,2-trichloroethoxycarbonyl)methionine, N-(2,2,2-trichloroethoxycarbonyl)serine, N-(2,2,2-trichloroethoxycarbonyl)threonine, N-(2,2,2-trichloroethoxycarbonyl)proline, N-(2,2,2-trichloroethoxycarbonyl)-histidine, N-(2,2,2-trichloroethoxycarbonyl)phenylalanine, N-(2,2,2-trichloroethoxycarbonyl)tyrosine
  • N-(allyloxycarbonyl)glycine N-(allyloxycarbonyl)alanine, N-(allyloxycarbonyl)valine, N-(allyloxycarbonyl)leucine, N-(allyloxycarbonyl)isoleucine, N-(allyloxycarbonyl)methionine, N-(allyloxycarbonyl)serine, N-(allyloxycarbonyl)threonine, N-(allyloxycarbonyl)proline, N-(allyloxycarbonyl)-histidine, N-(allyloxycarbonyl)phenylalanine, N-(allyloxycarbonyl)tyrosine, N-(allyloxycarbonyl)tryptophan, O-benzyl-N-(allyloxycarbonyl)serine, 4-benzyl N-(allyloxycarbonyl)aspartate, 5-benzyl N-(allyloxycarbonyl)glutamate, N-(allyloxycarbonyl)
  • the weight average molecular weight of the meta(acrylic) polymer is, for example, within the range of 2,000 to 50,000.
  • the above-mentioned weight average molecular weight may be measured, for example, by gel permeation chromatography described in the Examples below.
  • the content ratio of the (meth)acrylic polymer to the entire above-mentioned resist underlayer film-forming composition is within the range of 0.01% by weight to 1.00% by weight, preferably 0.01% by weight to 0.90% by weight, preferably 0.01% by weight to 0.80% by weight, preferably 0.01% by weight to 0.70% by weight, preferably 0.01% by weight to 0.60% by weight, preferably 0.01% by weight to 0.50% by weight, preferably 0.01% by weight to 0.49% by weight, preferably 0.01% by weight to 0.45% by weight, preferably 0.01% by weight to 0.4% by weight, preferably 0.01% by weight to 0.3% by weight, and preferably 0.01% by weight to 0.2% by weight.
  • the content ratio of said crosslinking catalyst is, for example, within the range of 0.1% to 50% by mass, preferably 1% to 30% by mass, of the crosslinking agent.
  • the cross-linking agent contained as an optional ingredient in the resist underlayer film-forming composition of the present invention are, for example, hexamethoxymethylmelamine, tetramethoxymethylbenzoguanamine 1,3,4,6-tetrakis(methoxymethyl)glycoluryl(tetrametboxymethylglycol uryl) (POWDERLINK [registered trademark] 1174), 1,3,4,6-tetrakis(butoxymethyl)glycoluryl, 1,3,4,6-tetrakis(hydroxymethyl)glycoluryl, 1,3-bis(hydroxymethyl)urea, 1,1,3,3-tetrakis(butoxymethyl)urea and 1,1,3,3-tetrakis(methoxymethyl)urea.
  • a surfactant may be further added to the resist underlayer film-forming composition of the present invention to further improve the applicability to uneven surfaces without the occurrence of pinholes, striations, and the like.
  • surfactants include nonionic surfactants, e.g., polyoxyethylene alkyl ethers, such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, and polyoxyethylene oleyl ether; polyoxyethylene alkyl aryl ethers, such as polyoxyethylene octyl phenol ether and polyoxyethylene nonyl phenol ether; polyoxyethylene-polyoxypropylene block copolymers; sorbitan fatty acid esters, such as sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, and sorbitan tristearate; and polyoxyethylene sorbitan fatty acid esters,
  • surfactants are incorporated in an amount of generally less than 2.0% by mass, preferably less than 1.0% by mass, to the total solid content of the resist underlayer film-forming composition of the present invention. These surfactants may be added each alone or in combination of two or more.
  • the resist underlayer film-forming composition of the present invention may be produced by applying the above-described resist underlayer film-forming composition onto a semiconductor substrate and baking the substrate.
  • Examples of semiconductor substrates to which the resist underlayer film-forming composition of the present invention is applied include a silicon wafer, a germanium wafer, and compound semiconductor wafers, such as gallium arsenide, indium phosphide, gallium nitride, indium nitride, and aluminum nitride.
  • the inorganic film is formed by, for example, an ALD (atomic layer deposition) method, a CVD (chemical vapor deposition) method, a reactive sputtering method, an ion plating method, a vacuum deposition method, or a spin coating method (spin on glass: SOG).
  • ALD atomic layer deposition
  • CVD chemical vapor deposition
  • a reactive sputtering method a reactive sputtering method
  • ion plating method ion plating method
  • vacuum deposition method a vacuum deposition method
  • spin coating method spin on glass: SOG
  • the inorganic films include a polysilicon film, a silicon oxide film, a silicon nitride film, a BPSG (Boro-Phospho Silicate Glass) film, a titanium nitride film, a titanium nitride oxide film, a tungsten film, a gallium nitride film, and a gallium arsenide film.
  • the resist underlayer film-forming composition of the present invention is applied onto such semiconductor substrate by an appropriate application method, such as a spinner or a coater. Then, the applied composition is baked using a heating means, such as a hotplate, to form a resist underlayer film.
  • the conditions for baking are appropriately selected from those at a baking temperature from 100 to 400° C. for a baking time from 0.3 to 60 minutes.
  • Preferred conditions for baking are those at a baking temperature from 120 to 350° C. for a baking time from 0.5 to 30 minutes, and more preferred conditions are those at a baking temperature from 150 to 300° C. for a baking time from 0.8 to 10 minutes.
  • the film thickness of the EUV resist underlayer film formed is, for example, within the range of from 0.001 ⁇ m (1 nm) to 10 ⁇ m, from 0.002 ⁇ m (2 nm) to 1 ⁇ m, from 0.005 ⁇ m (5 nm) to 0.5 ⁇ m (500 nm), from 0.001 ⁇ m (1 nm) to 0.05 ⁇ m (50 nm), from 0.002 ⁇ m (2 nm) to 0.05 ⁇ m (50 nm), from 0.003 ⁇ m (1 nm) to 0.05 ⁇ m (50 nm), from 0.004 ⁇ m (4 nm) to 0.05 ⁇ m (50 nm), from 0.005 ⁇ m (5 nm) to 0.05 ⁇ m (50 nm), from 0.003 ⁇ m (3 nm) to 0.03 ⁇ m (30 nm), from 0.003 ⁇ m (3 nm) to 0.02 ⁇ m (20 nm), and from 0.005 ⁇
  • Methods for producing patterned substrates involve the following steps. Usually, it is produced by forming a photoresist layer on top of an EUV resist underlayer film. There are no particular restrictions as to the photoresist to be formed by coating and baking on the EUV resist underlayer film by a known method per se, as long as the photoresist is sensitive to the light used for exposure. Both negative type photoresist and positive type photoresist could be used.
  • positive type photoresists composed of novolac resin and 1,2-naphthoquinone diazide sulfonic acid ester
  • chemically amplified type photoresists composed of a binder having a group that is degraded by an acid to increase the alkali dissolution rate and a photoacid generator
  • chemically amplified type photoresists composed of a low molecular weight compound that is degraded by an acid to increase the alkali dissolution rate of the photoresist, an alkaline soluble binder, and a photoacid generator
  • chemically amplified type photoresists composed of a binder having a group that is degraded by an acid to increase the alkali dissolution rate of the photoresist, a low molecular weight compound that is degraded by an acid to increase the alkali dissolution rate of the photoresist, and a photoacid generator, and resists containing metal elements.
  • Examples include V146G (trade name) manufactured by JSR Corporation, APEX-E (trade name) manufactured by Shipley, PAR710 (trade name) manufactured by Sumitomo Chemical Co. Ltd., AR2772, SEPR430 (trade names) manufactured by Shin-Etsu Chemical Co., Ltd. Furthermore, for example, fluoroatom-containing polymer-based photoresists that are disclosed in, Proc. SPIE, Vol. 3999, 330-334(2000), Proc. SPIE, Vol. 3999, 357-364(2000), and Proc. SPIE, Vol. 3999, 365-374(2000), are included.
  • resist compositions such as resist compositions, radiation-sensitive resin compositions, high-resolution patterning compositions based on organometallic solution, and metal-containing resist compositions disclosed in the following could be used: WO2019/188595, WO2019/187881, WO2019/187803, WO2019/167737, WO2019/167725, WO2019/187445, WO2019/167419, WO2019/123842, WO2019/054282, WO2019/058945, WO2019/058890, WO2019/039290, WO2019/044259, WO2019/044231, WO2019/026549, WO2018/193954A, WO2019/172054, WO2019/021975, WO2018/230334, WO2018/194123, JP2018-180525A, WO2018/190088, JP2018-070596A, JP2018-028090A, JP2016-153409A, JP2016-130240
  • Resist compositions include, for example, the following: An active light-sensitive or radiation-sensitive resin composition containing a resin A having a repeating unit having an acid degradable group whose polar group is protected by a protective group that is removed by the action of an acid, and a compound represented by the general formula (1):
  • m represents an integer from 1 to 6.
  • R 1 and R 2 each independently represents a fluorine atom or a perfluoroalkyl group.
  • L 1 represents —O—, —S—, —COO—, —SO 2 —, or —SO 3 —.
  • L 2 represents an alkylene group that may have a substituent or a single bond.
  • W 1 represents a cyclic organic group that may have a substituent.
  • M + represents a cation.
  • a metal-containing film-forming composition for extreme ultraviolet or electron beam lithography containing a compound having a metal-oxygen covalent bond and a solvent, wherein the metal elements constituting the above-mentioned compound belong to periods 3 to 7 of groups 3 to 15 of the periodic table.
  • Ar is a group where (n+1) hydrogen atom is removed from an arene having 6 to 20 carbon atoms; R 1 is a hydroxy group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms; n is an integer from 0 to 11; if n is 2 or more, a plurality of R 1 is identical or different; R 2 is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group.
  • R 3 is a monovalent group having a number of carbon of 1 to 20 containing the above-mentioned acid-dissociating group;
  • Z is a single bond, an oxygen atom or a sulfur atom;
  • R 4 is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group.
  • R 2 represents an alkyl group having 1 to 6 carbon atoms that may have a halogen atom, a hydrogen atom or a halogen atom
  • X 1 represents a single bond, —CO—O—* or —CO—NR 4 —*, where * represents a bonding hand with —Ar
  • R 4 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms
  • Ar represents an aromatic hydrocarbon group having 6 to 20 carbon atoms that may have one or more groups selected from the group consisting of a hydroxy group and a carboxyl group.
  • a resist composition that generates acid upon exposure and whose solubility in the developer is changed by the action of acid characterized by comprising: a base material component (A) whose solubility in the developer is changed by the action of acid and a fluorine additive component (F) that is degradable in an alkaline developer,
  • the fluorine additive component (F) contains the fluorine resin component (F1) having a structural unit (f1) containing a base-dissociating group and a structural unit (f2) containing a group represented by the following general formula (f2-r-1).
  • Rf 21 is each independently a hydrogen atom, an alkyl group, an alkoxy group, a hydroxy group, a hydroxyalkyl group or a cyano group; n′′ is an integer from 0 to 2, and * is a bonding hand.
  • structural unit (f1) includes a structural unit represented by the following general formula (f1-1) or a structural unit represented by the following general formula (f1-2):
  • R is each independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms;
  • X is a divalent linkage group without an acid-dissociating moiety;
  • a aryl is a divalent aromatic cyclic group that may have substituents;
  • X 01 is a single bond or a divalent linking group;
  • R 2 are each independently an organic group having a fluorine atom.
  • the resist films include, for example, the following:
  • R A is each independently a hydrogen atom or a methyl group
  • R 1 and R 2 are each independently a tertiary alkyl group having 4 to 6 carbon atoms
  • R 3 is each independently a fluorine atom or a methyl group
  • m is an integer from 0 to 4
  • X 1 is a single bond, a phenylene group or naphthylene group, or a linkage group having 1 to 12 carbon atoms containing at least one kind selected from an ester bond, a lactone ring, a phenylene group and a naphthylene group
  • X 2 is a single bond, an ester bond or an amide bond.
  • the resist materials include, for example, the following.
  • R A is a hydrogen atom or a methyl group
  • X 1 is a single bond or an ester group
  • X 2 is a linear, branched or cyclic alkylene group having 1 to 12 carbon atoms or an arylene group having 6 to 10 carbon atoms, wherein a part of a methylene group constituting the alkylene group may be partially substituted with an ether group, an ester group or a lactone ring-containing group, and at least one hydrogen atom contained in X 2 is substituted with a bromine atom
  • X 3 is a single bond, an ether group, an ester group, or a linear, branched or cyclic alkylene group having 1 to 12 carbon atoms, and a part of a methylene group constituting the alkylene group may be partially substituted with an ether group or an ester group
  • Rf 1 to Rf 4 are each independently hydrogen atom, fluorine atom or trifluoro
  • Rf 1 and Rf 2 may also be combined to form a carbonyl group.
  • R 1 to R 5 are each independently a linear, branched or cyclic alkyl group having 1 to 12 carbon atoms, a linear, branched or cyclic alkenyl group having 2 to 12 carbon atoms, an alkynyl group having 2 to 12 carbon atoms, an aryl group having 6 to 20 carbon atoms, an aralkyl group having 7 to 12 carbon atoms or an aryloxyalkyl group having 7 to 12 carbon atoms, a part or all of the hydrogen atom of these groups may be substituted with a hydroxy group, a carboxy group, an halogen atom, an oxo group, a cyano group, an amide group, a nitro group, a sultone group, a sulfone group or sulfonium salt-containing group, and a part of the methylene groups constituting these groups may be partially substituted with an
  • R A is a hydrogen atom or a methyl group
  • R 1 is a hydrogen atom or an acid unstable group
  • R 2 is a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms, or a halogen atom other than bromine
  • X 1 is a single bond or phenylene group, or a linear, branched or cyclic alkylene group having 1 to 12 carbon atoms which may contain an ester group or a lactone ring
  • X 2 is —O—, —O—CH 2 — or —NH—
  • m is an integer from 1 to 4
  • n is an integer from 0 to 3.
  • the metal-containing resist compositions include, for example, the following: Coatings containing metal oxo-hydroxo networks having organic ligands by metal-carbon bond and/or metal-carboxylate bond;
  • the coating solutions include, for example, the following:
  • An inorganic pattern formation precursor aqueous solution containing and composed of a mixture of water, a metal suboxide cation, a polyatomic inorganic anion, and a radiation-sensitive ligand containing and composed of a peroxide groups.
  • the exposure through a mask (reticle) for forming a predetermined pattern is conducted, and, an i-line, a KrF excimer laser, an ArF excimer laser, an EUV (extreme ultraviolet light), or an EB (electron beams) is used, for example.
  • an i-line, a KrF excimer laser, an ArF excimer laser, an EUV (extreme ultraviolet light), or an EB (electron beams) is used, for example.
  • the resist underlayer film-forming composition of the present application is preferably applied for EUV (Extreme Ultraviolet) exposure.
  • EUV Extreme Ultraviolet
  • an alkaline developer is used, and the conditions are appropriately selected from those at a development temperature from 5 to 50° C. for a development time from 10 to 300 seconds.
  • a usable alkaline developer includes, for example, an aqueous solution of an alkali, e.g., an inorganic alkali, such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, or aqueous ammonia; a primary amine, such as ethylamine or n-propylamine; a secondary amine, such as diethylamine or di-n-butylamine; a tertiary amine, such as triethylamine or methyldiethylamine; an alcohol amine, such as dimethylethanolamine or triethanolamine; a quaternary ammonium salt, such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, or choline; or a cyclic amine, such as pyrrole or piperidine.
  • an alkali e.g., an inorganic alkali, such as sodium hydroxide,
  • aqueous alkali solution to which alcohols, such as isopropyl alcohol, or surfactants, such as a nonionic surfactant, are added in an appropriate amount, may also be used.
  • a preferred developer is a quaternary ammonium salt, and further preferred are tetramethylammonium hydroxide and choline.
  • a surfactant and the like may be added to the above developer.
  • a method in which development is conducted using an organic solvent, such as butyl acetate, instead of an alkaline developer, to develop a portion with an unincreased alkali dissolution rate of the photoresist, may be used.
  • the resist underlayer film is subjected to dry etching.
  • the substrate may be processed by a substrate processing step by a method known per se (dry etching method, and the like), to produce a semiconductor device.
  • the weight average molecular weights of the polymers shown in the below-mentioned Synthesis Example 1 and Comparative Synthesis Example 1 of the present specification are the results measured by gel permeation chromatography (hereinafter referred to as GPC).
  • GPC gel permeation chromatography
  • the polymer solution did not become cloudy, when cooled to room temperature, and had a good solubility in propylene glycol monomethyl ether. GPC analysis showed that the polymer in the obtained solution had a weight average molecular weight of 15,000 as determined by standard polystyrene conversion and a degree of dispersion of 1.68.
  • the polymer obtained in this synthetic example has the structural unit represented by the following formula (1a).
  • the polymer solution did not become cloudy, when cooled to room temperature, and had a good solubility in propylene glycol monomethyl ether. GPC analysis showed that the polymer in the obtained solution had a weight average molecular weight of 3,690 as determined by standard polystyrene conversion and a degree of dispersion of 2.25.
  • the polymer obtained in this synthetic example has the structural unit represented by the following formula (1b) and formula (2b).
  • Each of the resist underlayer film-forming compositions of Example 1 and Comparative Example 1 was applied on a silicon wafer using a spinner.
  • the silicon wafer was placed on a hot plate and baked at 215° C. for 60 seconds to obtain a resist underlayer film of a film thickness of 5 nm.
  • the positive type resist solution for EUV was spin-coated on the resist underlayer film, and heated at 100° C. for 60 seconds to form an EUV resist film.
  • the resist film was exposed to an electron beam lithography device (ELS-G130) under predetermined conditions. After the exposure, baking (PEB) was performed at 110° C. for 60 seconds and cooled to room temperature on a cooling plate.
  • ELS-G130 electron beam lithography device
  • the resulting photoresist pattern was observed from the upper side of the pattern and evaluated.
  • a resist pattern that formed well was rated as “good” and an undesirable state in which the resist pattern peeled off and collapsed was rated as “collapsed”.
  • Each of the resist underlayer film-forming compositions of Example 1 and Comparative Example 1 was applied on a silicon wafer using a spinner.
  • the silicon wafer was placed on a hot plate and baked at 215° C. for 60 seconds to obtain a resist underlayer film of a film thickness of 5 nm.
  • the negative type resist solution for EUV was spin-coated on the resist underlayer film, and heated at 100° C. for 60 seconds to form an EUV resist film.
  • the resist film was exposed under predetermined conditions using an electron beam lithography device (ELS-G130). After the exposure, baking (PEB) was performed at 110° C. for 60 seconds and cooled to room temperature on a cooling plate.
  • ELS-G130 electron beam lithography device
  • a resist pattern with 25 nm line/50 nm pitch was formed.
  • a scanning electron microscope (CG4100, manufactured by Hitachi High-Technologies Corporation) was used to measure the length of the resist pattern.
  • the resulting photoresist pattern was observed from the upper side of the pattern and evaluated.
  • a resist pattern that formed well with the same exposure amount was rated as “good” and a resist pattern with residuals existing between patterns was rated as “defects”.
  • the resist underlayer film-forming composition of the present invention can provide a composition for forming a resist underlayer film capable of forming a desired resist pattern as well as a method for producing a substrate having a resist pattern using the resist underlayer film-forming composition, and a method for producing a semiconductor device.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
US17/793,735 2020-02-07 2021-02-05 Euv resist underlayer film-forming composition Pending US20230098881A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020019765 2020-02-07
JP2020-019765 2020-02-07
PCT/JP2021/004201 WO2021157678A1 (ja) 2020-02-07 2021-02-05 Ｅｕｖレジスト下層膜形成組成物

Publications (1)

Publication Number Publication Date
US20230098881A1 true US20230098881A1 (en) 2023-03-30

Family

ID=77199346

Family Applications (1)

Application Number Title Priority Date Filing Date
US17/793,735 Pending US20230098881A1 (en) 2020-02-07 2021-02-05 Euv resist underlayer film-forming composition

Country Status (6)

Country Link
US (1) US20230098881A1 (ko)
JP (1) JPWO2021157678A1 (ko)
KR (1) KR20220139927A (ko)
CN (1) CN115053184A (ko)
TW (1) TW202144917A (ko)
WO (1) WO2021157678A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023026934A1 (ja) * 2021-08-27 2023-03-02 日産化学株式会社 レジスト下層膜形成組成物

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5488176B2 (ja) * 2010-04-28 2014-05-14 Ｊｓｒ株式会社 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法
TWI506370B (zh) * 2011-01-14 2015-11-01 Shinetsu Chemical Co 圖案形成方法及使用於該方法之光阻組成物
JP6015962B2 (ja) * 2011-10-20 2016-10-26 日産化学工業株式会社 レジスト下層膜形成組成物用添加剤及びそれを含むレジスト下層膜形成組成物
KR101297214B1 (ko) 2011-11-25 2013-08-16 (주) 유앤아이 주름관 성형장치 및 이를 이용한 주름관 성형방법
US10795261B2 (en) * 2015-11-17 2020-10-06 Nissan Chemical Industries, Ltd. Additive for resist underlayer film-forming composition and resist underlayer film-forming composition containing the same
CN109690405B (zh) * 2016-09-15 2022-10-04 日产化学株式会社 抗蚀剂下层膜形成用组合物
CN118011734A (zh) * 2017-02-03 2024-05-10 日产化学株式会社 包含具有含脲键的结构单元的聚合物的抗蚀剂下层膜形成用组合物

Also Published As

Publication number Publication date
CN115053184A (zh) 2022-09-13
JPWO2021157678A1 (ko) 2021-08-12
WO2021157678A1 (ja) 2021-08-12
KR20220139927A (ko) 2022-10-17
TW202144917A (zh) 2021-12-01

Similar Documents

Publication Publication Date Title
US10894887B2 (en) Composition for forming film protecting against aqueous hydrogen peroxide solution
US8962234B2 (en) Resist underlayer film forming composition and method for forming resist pattern using the same
JP7268684B2 (ja) レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
WO2006040918A1 (ja) 含窒素芳香環構造を含むリソグラフィー用反射防止膜形成組成物
US20230098881A1 (en) Euv resist underlayer film-forming composition
US20230244148A1 (en) Euv resist underlayer film-forming composition
WO2023238920A1 (ja) 環境負荷を低減するためのレジスト下層膜形成用組成物
WO2022163602A1 (ja) 脂環式炭化水素基を有するポリマーを含むレジスト下層膜形成組成物
US20230060697A1 (en) Euv resist underlayer film-forming composition
US20240004295A1 (en) Resist underlayer film-forming composition containing a reaction product of trifunctional compound
WO2023182408A1 (ja) フルオレン骨格を有するレジスト下層膜形成組成物
WO2024128190A1 (ja) レジスト下層膜形成用組成物
JP2024073474A (ja) 多環芳香族含有ポリマーを含むレジスト下層膜形成用組成物
TW202416056A (zh) 阻劑下層膜形成用組成物
JP2024004449A (ja) レジスト下層膜形成用組成物
WO2024024490A1 (ja) レジスト下層膜形成用組成物
WO2022163673A1 (ja) 酸二無水物の反応生成物を含むレジスト下層膜形成組成物
WO2023037949A1 (ja) レジスト下層膜形成組成物
WO2023026934A1 (ja) レジスト下層膜形成組成物
WO2024128157A1 (ja) レジスト下層膜形成用組成物
WO2023085293A1 (ja) アクリルアミド基含有レジスト下層膜形成用組成物
WO2022196673A1 (ja) ナフタレンユニット含有レジスト下層膜形成組成物
CN118355328A (zh) 包含含有多环芳香族的聚合物的抗蚀剂下层膜形成用组合物

Legal Events

Date Code Title Description
AS Assignment

Owner name: NISSAN CHEMICAL CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SHIMIZU, SHOU;TAMURA, MAMORU;REEL/FRAME:060549/0065

Effective date: 20220713

STPP Information on status: patent application and granting procedure in general

Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION