US20200039007A1 - Bonding member, method for producing bonding member and method for producing bonding structure - Google Patents

Bonding member, method for producing bonding member and method for producing bonding structure Download PDF

Info

Publication number
US20200039007A1
US20200039007A1 US16/487,924 US201816487924A US2020039007A1 US 20200039007 A1 US20200039007 A1 US 20200039007A1 US 201816487924 A US201816487924 A US 201816487924A US 2020039007 A1 US2020039007 A1 US 2020039007A1
Authority
US
United States
Prior art keywords
bonding
silver
target
bonding member
bonding target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US16/487,924
Other languages
English (en)
Inventor
Katsuaki Suganuma
Chuantong CHEN
Toshiyuki ISHINA
Seungjun NOH
Chanyang CHOE
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osaka University NUC
Original Assignee
Osaka University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka University NUC filed Critical Osaka University NUC
Assigned to OSAKA UNIVERSITY reassignment OSAKA UNIVERSITY ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ISHINA, TOSHIYUKI, CHOE, CHANYANG, SUGANUMA, KATSUAKI, NOH, SEUNGJUN, CHEN, CHUANTONG
Publication of US20200039007A1 publication Critical patent/US20200039007A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23F—MAKING GEARS OR TOOTHED RACKS
    • B23F1/00—Making gear teeth by tools of which the profile matches the profile of the required surface
    • B23F1/02—Making gear teeth by tools of which the profile matches the profile of the required surface by grinding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/021—Isostatic pressure welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/24—Preliminary treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
    • H01L2224/03444—Manufacturing methods by blanket deposition of the material of the bonding area in gaseous form
    • H01L2224/0345—Physical vapour deposition [PVD], e.g. evaporation, or sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05166—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/05186—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05575—Plural external layers
    • H01L2224/0558—Plural external layers being stacked
    • H01L2224/05582—Two-layer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/271—Manufacture and pre-treatment of the layer connector preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/278—Post-treatment of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/278—Post-treatment of the layer connector
    • H01L2224/2783—Reworking, e.g. shaping
    • H01L2224/2784—Reworking, e.g. shaping involving a mechanical process, e.g. planarising the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29005—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29139—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
    • H01L2224/301—Disposition
    • H01L2224/3012—Layout
    • H01L2224/3015—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/325—Material
    • H01L2224/32501—Material at the bonding interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/325—Material
    • H01L2224/32505—Material outside the bonding interface, e.g. in the bulk of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83053—Bonding environment
    • H01L2224/83091—Under pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83053—Bonding environment
    • H01L2224/83091—Under pressure
    • H01L2224/83092—Atmospheric pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83053—Bonding environment
    • H01L2224/83095—Temperature settings
    • H01L2224/83096—Transient conditions
    • H01L2224/83097—Heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83193—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/8321—Applying energy for connecting using a reflow oven
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]

Definitions

  • the present invention relates to a bonding member, a method for producing the bonding member, and a method for producing a bonding structure.
  • solder that contains lead is in wide use as the bonding member. Recently, however, solder that does not contain lead (lead-free solder) has been progressively studied for environmental protection. Nonetheless, the lead-free solder generally has a higher melting point than that of the solder containing lead. When the lead-free solder is used for bonding at a high temperature, a thermal stress may occasionally destroy bonding targets to be bonded, or cause a void at an interface at which the bonding targets are bonded to each other by solder.
  • Patent Document 1 discloses a method by which a paste is applied to an insulating substrate and then a semiconductor chip is placed on the paste and heated, to bond the semiconductor chip to the insulating substrate.
  • the paste contains metal nano particles, an organic dispersant, a dispersing and capturing agent, and a volatile organic component, and volatilizes gas from the paste when being heated.
  • Patent Document 1 provides a low shear strength and thus cannot bond the bonding targets in a favorable manner. Especially, bonding targets having a large area size cannot be bonded in a favorable manner.
  • the present invention made in light of the above-described problem, has an object of providing a bonding member that bonds bonding targets in a favorable manner, a method for producing such a bonding member, and a method for producing a bonding structure.
  • a bonding member according to the present invention includes a surface-processed silver surface.
  • the silver surface is supplied with a compressive stress.
  • the silver grains each have a size of 1 mm or shorter at the silver surface.
  • the bonding member has a thickness of 50 mm or greater and 300 ⁇ m of less.
  • the silver surface is rolled.
  • the silver surface is ground.
  • the silver surface is a part of a surface of a surface-processed porous silver sheet.
  • a method for producing a bonding member according to the present invention includes preparing a silver layer; and processing a surface of the silver layer.
  • the silver layer in the processing of the surface of the silver layer, is rolled or pressed to process the surface of the silver layer.
  • the surface of the silver layer is ground to process the surface of the silver layer.
  • the surface of the silver layer in the processing of the surface of the silver layer, is processed such that the number of grain boundaries, between silver grains, at the surface of the silver layer is larger than that in a pre-processing state.
  • the silver layer is a porous silver sheet including pores.
  • the surface of the silver layer in the processing of the surface of the silver layer, is processed such that the number of the pores at the surface of the silver layer is smaller than that in a pre-processing state.
  • a method for producing a bonding structure includes preparing a first bonding target, a second bonding target, and a bonding member; forming a stack body including the first bonding target, the bonding member, and the second bonding target stacked such that the bonding member is located between the first bonding target and the second bonding target; and heating the stack body to bond the first bonding target and the second bonding target to each other via the bonding member.
  • the bonding member includes a surface-processed silver surface.
  • the bonding member in the preparing of the first bonding target, the second bonding target, and the bonding member, is separate from the first bonding target and the second bonding target.
  • the bonding member in the preparing of the first bonding target, the second bonding target, and the bonding member, is formed in advance on at least one of the first bonding target and the second bonding target.
  • the stack body in the bonding of the first bonding target and the second bonding target, is heated at a temperature of 150° C. or higher and 350° C. or lower.
  • bonding targets is bonded in a favorable manner.
  • FIG. 1 is a schematic view of a bonding member in an embodiment.
  • FIG. 2 is a schematic view of a bonding structure in an embodiment.
  • FIG. 3A is a schematic view illustrating a silver layer
  • FIG. 3B is an SEM photograph of a surface of the silver layer
  • FIG. 3C is a schematic view illustrating a bonding member according to the present invention
  • FIG. 3D is an SEM photograph of a surface of the bonding member according to the present invention.
  • FIGS. 4A-4C are schematic views illustrating a method for producing the bonding structure in an embodiment.
  • FIG. 5A is a schematic view illustrating a second bonding target
  • FIG. 5B is a schematic view illustrating a first bonding target.
  • FIG. 6A is a schematic view illustrating a stack body
  • FIG. 6B is a schematic view of a bonding step in the method for producing the bonding structure.
  • FIGS. 7A-7D are schematic views illustrating a method for producing a bonding structure in an embodiment.
  • FIGS. 8A-8D are schematic views illustrating a method for producing a bonding structure in an embodiment.
  • FIG. 9A is a schematic view of a bonding member in an embodiment
  • FIGS. 9B and 9C are schematic views illustrating a method for producing a bonding structure in an embodiment.
  • FIGS. 10A and 10B are SEM photographs of cross-sections of a pre-rolling silver layer
  • FIGS. 10C and 10D are SEM photographs of cross-sections of a post-rolling bonding member.
  • FIGS. 11A and 11B are SEM photographs of cross-sections of a pre-rolling silver layer
  • FIGS. 11C and 11D are SEM photographs of cross-sections of a post-rolling bonding member.
  • FIGS. 12A and 12B are SEM photographs of cross-sections of a pre-rolling silver layer
  • FIGS. 12C and 12D are SEM photographs of cross-sections of a post-rolling bonding member.
  • FIG. 13A shows measurement results of EBSD performed on the pre-rolling silver layer
  • FIG. 13B shows measurement results of EBSD performed on the post-rolling bonding member.
  • FIG. 14 is a graph showing the relationship between the size of the silver grains and the frequency.
  • FIGS. 15A-15C are SEM photographs of surfaces of bonding members.
  • FIGS. 16A-16C are SEM photographs of surfaces of bonding members.
  • FIGS. 17A-17C are SEM photographs of surfaces of bonding members.
  • FIG. 18 is a graph showing the shear strength of bonding structures.
  • FIG. 19 is a graph showing the relationship between the bonding temperature and the shear strength of a bonding structure.
  • FIG. 20 is a graph showing the relationship between the bonding pressure and the shear strength of a bonding structure.
  • FIG. 21 is a graph showing the shear strength of bonding structures.
  • FIG. 22A is an SEM photograph of a surface of a silver layer
  • FIG. 22A is a schematic view illustrating a bonding member.
  • FIGS. 23A-23C are SEM photographs of a surface of a post-rolling bonding member.
  • FIGS. 24A-24C are SEM photographs of a cross-section, taken along a direction perpendicular to a rolling direction, of the post-rolling processing bonding member.
  • FIGS. 25A-25C are SEM photographs of a cross-section, taken along the rolling direction, of the post-rolling bonding member.
  • FIGS. 26A-26C are SEM photographs of a surface of the bonding member.
  • FIG. 27 is a graph showing the relationship between the heating temperature and the shear strength.
  • FIGS. 28A-28D are schematic views illustrating a method for producing a bonding structure according to the present invention.
  • FIGS. 29A-29D are SEM photographs of cross-sections corresponding to FIGS. 28A-28D .
  • FIGS. 30A-30C are SEM photographs of cross-sections of, and in the vicinity of, an interface between the bonding members.
  • FIG. 31A is a graph showing the relationship between the heating time and the shear strength
  • FIG. 31B is a graph showing the relationship between the heating temperature and the shear strength.
  • FIG. 32 is a graph showing the relationship between the bonding area and the shear strength.
  • FIGS. 33A and 33B are SEM photographs of cross-sections of, and in the vicinity of, an interface between the bonding members
  • FIGS. 33C and 33D are SEM photographs of cross-sections of, and in the vicinity of, an interface between bonding members in a comparative example.
  • FIG. 1 is a schematic view of the bonding member 10 in this embodiment.
  • the bonding member 10 is used to bond bonding targets to each other.
  • the bonding member 10 is typically like a thin film.
  • the bonding member 10 is formed of, for example, silver.
  • the bonding member 10 includes a silver surface 11 a and a silver surface 11 b.
  • the silver surface 11 a and the silver surface 11 b are physically supplied with a force.
  • the silver surface 11 a and the silver surface 11 b are surface-processed by being physically supplied with a force.
  • the silver surface 11 a and the silver surface 11 b are plastically deformed by being surface-processed.
  • the silver surface 11 a and the silver surface 11 b have a great number of tiny grain boundaries or crystal defects formed thereat by being surface-processed.
  • the “grain boundary” refers to a border between silver grains.
  • the bonding member 10 has a thickness of, for example, 100 nm or greater.
  • the thickness of the bonding member 10 is preferably 50 ⁇ m or greater and 300 ⁇ m or less, and more preferably 100 ⁇ m or greater and 200 ⁇ m.
  • the silver surface 11 a and the silver surface 11 b are supplied with a compressive stress by being surface-processed. Namely, the silver surface 11 a and the silver surface 11 b each have a residual stress having a negative value.
  • the bonding member 10 typically includes two principal surfaces. In FIG. 1 , both of the two principal surfaces of the bonding member 10 are illustrated as being exposed without being in contact with any other member. It should be noted that at least one of the two principal surfaces of the bonding member 10 may be put into contact with a member before the bonding member 10 is put into contact with bonding targets.
  • the bonding member 10 When the bonding member 10 is put into contact with the bonding targets and heated, oxygen in the air is absorbed by the grain boundaries or defects, so that silver is oxidized to be liquid silver oxide.
  • the liquid silver oxide is moved to the silver surface 11 a and the silver surface 11 b, and gushes out therefrom. Since the silver surface 11 a and the silver surface 11 b are supplied with a compressive stress, the movement of the liquid silver oxide to the silver surface 11 a and the silver surface 11 b can be promoted. As a result, the liquid silver oxide fills a gap at the interface caused by convexed and concaved portions of the bonding targets to integrate the bonding targets, and concurrently is reduced to metallic silver.
  • the bonding targets are bonded to each other in a favorable manner. In this manner, the bonding member 10 in this embodiment is usable to produce a bonding structure including the bonding targets bonded to each other.
  • FIG. 2 is a schematic view of the bonding structure 100 in this embodiment.
  • the bonding structure 100 includes the bonding member 10 , a first bonding target 110 , and a bonding target 120 .
  • the bonding member 10 is like a thin film.
  • the first bonding target 110 , the bonding member 10 , and the second bonding target 120 are stacked in this order, and the bonding member 10 bonds the first bonding target 110 and the second bonding target 120 to each other.
  • the bonding member 10 includes the silver surface 11 a and the silver surface 11 b.
  • the first bonding target 110 may be any member.
  • the first bonding target 110 is, for example, a substrate.
  • the substrate may be a metal substrate or a metallized insulating substrate.
  • the metal substrate is formed of, for example, copper, zinc, gold, palladium, aluminum, nickel, cobalt, iron, alumina, tungsten, niobium, molybdenum, titanium, stainless steel, invar alloy (alloy formed of iron, nickel, manganese, and carbon), or kovar alloy (alloy formed of iron, nickel, cobalt, manganese, and silicon).
  • the insulating substrate is formed of, for example, glass, silica glass, silicon, carbon, ceramics, silicon carbide, gallium nitride, gallium nitride formed on silicon, silicon nitride, or aluminum nitride.
  • the second bonding target 120 may be any member.
  • the second bonding target 120 is, for example, a substrate.
  • the substrate may be a metal substrate or a metallized insulating substrate.
  • the second bonding target 120 may be formed of, for example, any of substantially the same materials as those used to form the first bonding target 110 . It is desired to form a silver layer on a surface of the second bonding target 120 in advance in order to provide a certain level of bonding property with silver.
  • the second bonding target 120 may be a semiconductor element or a wiring line.
  • the semiconductor element is formed of, for example, silicon, carbon, silicon carbide, gallium nitride, gallium nitride formed on silicon, silicon nitride, or aluminum nitride.
  • the wiring line is formed of, for example, copper, zinc, gold, palladium, aluminum, niobium, nickel, cobalt, molybdenum, tungsten, titanium, or iron. It is preferred that the metal used to form the wiring line is copper or iron having silver formed on a surface thereof in order to provide the wiring line with high versatility and high cost performance and also in order to make the wiring line easily bondable with the bonding member 10 .
  • the liquid silver oxide fills the gap at the interface caused by the convexed and concaved portions of the bonding targets and is changed into metallic silver, so as to integrate and bond the first bonding target 110 and the second bonding target 120 to each other.
  • silver oxide in silver crystals progressively melts at a temperature lower than a general metal sintering temperature. Therefore, the bonding structure 100 in this embodiment realizes favorable bonding even under a low-temperature environment. Even in the case where either one of the first bonding target 110 and the second bonding target 120 has a relatively low resistance against heat, the first bonding target 110 and the second bonding target 120 are bonded to each other in a favorable manner. Since a large-scale device such as a heating furnace or the like is not needed, bonding can be performed with a simple process at low cost. In addition, bonding can be performed simply with a versatile metal material.
  • FIG. 3A is a schematic view of a silver layer 5 .
  • FIG. 3B is an SEM photograph of a surface of the silver layer 5 .
  • FIG. 3C is a schematic view illustrating the bonding member 10 according to the present invention.
  • FIG. 3D is an SEM photograph of a surface of the bonding member 10 according to the present invention.
  • the method for producing the bonding member 10 in this embodiment includes a preparation step and a processing step.
  • the silver layer 5 is prepared (preparation step).
  • the silver 5 includes a plurality of silver grains 12 .
  • Grain boundaries 14 are formed between the silver grains 12 .
  • a force is physically applied to the surface of the silver layer 5 to process the surface of the silver layer 5 (processing step).
  • a force is physically applied to the surface of the silver layer 5 to process the surface of the silver layer 5 such that the surface is plastically deformed.
  • the silver layer 5 is rolled or pressed to have a force physically applied to a surface thereof, so that the surface of the silver layer 5 is processed.
  • the surface of the silver layer 5 may be ground to be physically supplied with a force, so that the surface of the silver layer 5 is processed.
  • the surface of the silver layer 5 may be, for example, mechanically ground or manually ground (polished).
  • the surface of the silver layer 5 may be ground by friction stir welding (FSW). Still alternatively, in the processing step, the surface of the silver layer 5 may be shot-peened to be physically supplied with a force, so that the surface of the silver layer 5 is processed.
  • FSW friction stir welding
  • the bonding member 10 includes the plurality of silver grains 12 .
  • the grain boundaries 14 are formed between the silver grains 12 .
  • the number of the grain boundaries 14 is larger than in a pre-processing state in FIG. 3B .
  • the number of the grain boundaries, between the silver grains, present per micrometer at a silver surface is 10 or more.
  • the size of each of the silver grains 12 is shorter than in the pre-processing state at the silver surface.
  • the size of each silver grain 12 in the pre-processing state is 2 mm or longer and 10 mm or shorter, whereas the size of each silver grain 12 in a post-processing state is 1 mm or shorter.
  • the surface of the silver layer 5 is physically supplied with a force and thus is surface-processed such that the number of the grain boundaries 14 between the silver grains 12 at the surface of the bonding member 10 is larger than in the pre-processing state.
  • FIGS. 4A-4C are schematic views illustrating an example of method for producing the bonding structure 100 in this embodiment.
  • the bonding structure 100 includes the above-described bonding member 10 , the first bonding target 110 , and the second bonding target 120 . Overlapping descriptions will be omitted in order to avoid redundancy.
  • the first bonding target 110 , the second bonding target 120 , and the bonding member 10 are prepared (preparation step).
  • the bonding member 10 is like a thin film.
  • the bonding member 10 includes the silver surface 11 a and the silver surface 11 b.
  • the silver surface 11 a and the silver surface 11 b are physically supplied with a force.
  • the silver surface 11 a and the silver surface 11 b are surface-processed by being physically supplied with a force.
  • the silver surface 11 a and the silver surface 11 b are plastically deformed by being surface-processed.
  • the bonding member 10 is separate from the first bonding target 110 and the second bonding target 120 . Therefore, the silver surface 11 a and the silver surface 11 b are exposed.
  • a stack body L including the bonding member 10 located between the first bonding target 110 and the second bonding target 120 is formed (stack body formation step).
  • the first bonding target 110 is in contact with the silver surface 11 a of the bonding member 10 .
  • the second bonding target 120 is in contact with the silver surface 11 b of the bonding member 10 .
  • the first bonding target 110 and the second bonding target 120 are stacked on each other via the bonding member 10 .
  • the bonding member 10 may be in indirect contact with the first bonding target 110 via another layer.
  • an adhesive layer may be provided between the bonding member 10 and the first bonding target 110 .
  • the adhesive layer is formed of, for example, titanium or titanium nitride.
  • the adhesive layer has a thickness of, for example, 0.01 ⁇ m or greater and 0.05 m or less.
  • a silver layer may be provided between the bonding member 10 and the first bonding target 110 .
  • the bonding member 10 may be in indirect contact with the second bonding target 120 via another layer.
  • a silver layer may be provided between the bonding member 10 and the second bonding target 120 .
  • the stack body L is heated to move the liquid silver oxide to the silver surface 11 a and the silver surface 11 b, so that the bonding member 10 bonds the first bonding target 110 and the second bonding target 120 to each other to produce the bonding structure 100 (bonding step).
  • the stack body L is heated by use of, for example, a hot plate, a heating furnace, or rapid thermal anneal (RTA).
  • the stack body L is heated at a heating temperature of 150° C. or higher and 350° C. or lower.
  • the stack body L is heated for preferably 15 minutes or longer and 5 hours or shorter, more preferably 30 minutes or longer and 3 hours or shorter.
  • the stack body L is heated, and as a result, the liquid silver oxide is moved to the silver surface 11 a and the silver surface 11 b and gushes out therefrom.
  • the liquid silver oxide is reduced to be decomposed into silver and oxygen.
  • the silver obtained as a result of the decomposition fills the gap at the interface caused by the convexed and concaved portions of the bonding targets to integrate the bonding targets.
  • the silver surface 11 a of the bonding member 10 and the first bonding target 110 are bonded to each other at the interface, and the silver surface 11 b of the bonding member 10 and the second bonding target 120 are bonded to each other at the interface.
  • the bonding member 10 bonds the first bonding target 110 and the second bonding target 120 to each other.
  • the bonding structure 100 is produced.
  • the first bonding target 110 and the second bonding target 120 may be bonded to each other by applying a pressure to the stack body L.
  • the bonding structure 100 is produced by use of the bonding member 10 including the silver surfaces that are surface-processed by being physically supplied with a force. Therefore, the first bonding target 110 and the second bonding target 120 can be bonded to each other at a relatively low pressure.
  • the first bonding target 110 and the second bonding target 120 can be bonded to each other with no pressure or at a pressure of 1 MPa or lower.
  • the first bonding target 110 and the second bonding target 120 are bonded to each other by use of the bonding member 10 including the silver surfaces that are surface-processed by being physically supplied with a force. Therefore, the first bonding target 110 and the second bonding target 120 can be bonded to each other in a favorable manner even at a relatively low heating temperature. Thus, heat during the heating can be suppressed from destroying the first bonding target 110 and/or the second bonding target 120 , or from causing a void at, or in the vicinity of, a portion in which the first bonding target 110 and the second bonding target 120 are bonded to each other.
  • the bonding member 10 in the preparation step of preparing the bonding member 10 , includes the silver surface 11 a and the silver surface 11 b surface-processed by being physically supplied with a force. Therefore, a great number of grain boundaries are formed at the silver surface 11 a and the silver surface 11 b. For this reason, in the bonding step, a large amount of oxygen in the air can be taken through the grain boundaries and the defects. This can promote the generation of the liquid silver oxide in the bonding step. In addition, the silver surface 11 a and the silver surface 11 b are supplied with a compressive stress.
  • the movement of the liquid silver oxide to the silver surface 11 a and the silver surface 11 b can be promoted. Therefore, the movement of the liquid silver oxide to the silver surface 11 a and the silver surface 11 b can be promoted. As a result, the first bonding target 110 and the second bonding target 120 can be bonded to each other in a favorable manner.
  • FIG. 5A is a schematic view illustrating the second bonding target 120 .
  • FIG. 5B is a schematic view illustrating the first bonding target 110 .
  • FIG. 6A is a schematic view illustrating the stack body L.
  • FIG. 6B is a schematic view of the bonding step in the method for producing the bonding structure 100 .
  • the second bonding target 120 is prepared.
  • the second bonding target 120 is a silicon substrate.
  • the silicon substrate has a size of 3 mm (length) ⁇ 3 mm (width) ⁇ 0.5 mm (thickness).
  • An adhesive layer 130 B was formed on the surface of the second bonding target 120 by sputtering.
  • the adhesive layer 130 B is formed of titanium.
  • the adhesive layer 130 B has a thickness of 100 nm.
  • a silver layer 140 B was formed on a surface of the adhesive layer 130 B.
  • the silver layer 140 B is formed of silver.
  • the silver layer 140 B has a thickness of 1 ⁇ m.
  • the first bonding target 110 is prepared.
  • the first bonding target 110 is a copper substrate.
  • the copper substrate has a size of 8 mm (length) ⁇ 14 mm (width) ⁇ 0.8 mm (thickness).
  • An adhesive layer 130 A was formed on the surface of the first bonding target 110 by sputtering.
  • the adhesive layer 130 A is formed of titanium.
  • the adhesive layer 130 A has a thickness of 100 nm.
  • a silver layer 140 A was formed on a surface of the adhesive layer 130 A.
  • the silver layer 140 A is formed of silver.
  • the silver layer 140 A has a thickness of 1 ⁇ m.
  • the first bonding target 110 illustrated in FIG. 5B , the bonding member 10 , and the second bonding target 120 illustrated in FIG. 5A are formed such that the bonding member 10 is located between the first bonding target 110 and the second bonding target 120 .
  • the bonding member 10 is produced by rolling a silver sheet. For example, two rollers are rotated, and the silver sheet is inserted between the two rollers to be rolled.
  • silver sheets respectively having thicknesses of 0.3 mm, 0.5 mm, and 1 mm in a pre-rolling state are rolled to have a thickness of 0.1 mm, so that the bonding members 10 are produced.
  • the silver sheets having the thicknesses of 0.3 mm, 0.5 mm, and 1 mm in the pre-rolling state respectively have pressurizing ratios of 66%, 80%, and 90%.
  • the rolled bonding members 10 were cut into a size slightly larger than that of the second bonding target 120 .
  • two bonding targets 120 are located on the first bonding target 110 .
  • the stack body L illustrated in FIG. 6A is placed on a hot plate 210 and heated.
  • the stack body L is heated at a heating temperature of 150° C. or higher and 350° C. or lower.
  • the stack body L is pressurized by a weight 230 via a ceramic plate 220 .
  • the bonding member 10 is separate from the first bonding target 110 and the second bonding target 120 .
  • the bonding member 10 may be formed in advance on at least one of the first bonding target 110 and the second bonding target 120 .
  • FIGS. 7A-7D are schematic views illustrating the method for producing the bonding structure 100 in this embodiment.
  • the bonding member 10 is formed in advance on each of the first bonding target 110 and the second bonding target 120 .
  • the production method in this embodiment described with reference to FIGS. 7A-7D is substantially the same as the method for producing the bonding structure 100 described above with reference to FIGS. 4A-4C . Overlapping descriptions will be omitted in order to avoid redundancy.
  • the first bonding target 110 and the second bonding target 120 are prepared (preparation step).
  • the bonding member 10 is formed on each of the first bonding target 110 and the second bonding target 120 .
  • a bonding member 10 A is formed on the surface of the first bonding target 110
  • a bonding member 10 B is formed on the surface of the second bonding target 120 .
  • the bonding member 10 is formed in advance on each of the first bonding target 110 and the second bonding target 120 .
  • the bonding member 10 A may be in direct contact with the first bonding target 110 , or may be in indirect contact with the first bonding target 110 via another layer.
  • an adhesive layer may be provided between the bonding member 10 A and the first bonding target 110 .
  • the adhesive layer is formed of, for example, titanium or titanium nitride.
  • the adhesive layer has a thickness of, for example, 0.01 mm or greater and 0.05 mm or less.
  • a silver layer may be provided between the bonding member 10 A and the first bonding target 110 .
  • a silver surface 11 d of the bonding member 10 B is exposed.
  • the bonding member 10 B may be in direct contact with the second bonding target 120 , or may be in indirect contact with the second bonding target 120 via another layer.
  • An adhesive layer may be provided between the bonding member 10 B and the second bonding target 120 .
  • a silver layer may be provided between the bonding member 10 B and the second bonding target 120 .
  • the first bonding target 110 and the bonding member 10 A may be exposed to an oxygen atmosphere as necessary.
  • the bonding member 10 B is formed on the surface of the second bonding target 120 , the second bonding target 120 and the bonding member 10 B may be exposed to an oxygen atmosphere as necessary.
  • a stack body L including the bonding members 10 A and 10 B located between the first bonding target 110 and the second bonding target 120 is formed (stack body formation step).
  • the bonding member 10 A faces the bonding member 10 B, and the silver surface 10 c is in contact with the silver surface 10 d.
  • the first bonding target 110 and the second bonding target 120 are stacked on each other via the bonding members 10 A and 10 B.
  • the stack body L is heated to move the liquid silver oxide to the silver surface 11 c and the silver surface 11 d, so that the bonding member 10 bonds the first bonding target 110 and the second bonding target 120 to each other. As a result, the bonding structure 100 is produced.
  • the stack body L is heated, and as a result, the liquid silver oxide is moved to the silver surfaces.
  • the bonding member 10 including the bonding members 10 A and 10 B integrated together is formed.
  • the bonding structure 100 is produced.
  • an interface between the two layers derived from the bonding members 10 A and 10 B may or may not be clearly specifiable.
  • the stack body L is heated by use of, for example, a hot plate, a heating furnace, or rapid thermal anneal. It is preferred that the stack body L is heated at a heating temperature of 150° C. or higher and 350° C. or lower.
  • the first bonding target 110 and the second bonding target 120 may be bonded to each other by applying a pressure to the stack body L.
  • the bonding structure 100 is produced by use of the bonding members 10 A and 10 B each including the silver surfaces that are surface-processed by being physically supplied with a force. Therefore, the first bonding target 110 and the second bonding target 120 can be bonded to each other at a relatively low pressure.
  • the first bonding target 110 and the second bonding target 120 can be bonded to each other with no pressure or at a pressure of 1 MPa or lower.
  • the first bonding target 110 and the second bonding target 120 are bonded to each other by use of the bonding members 10 A and 10 B each including the silver surfaces that are surface-processed by being physically supplied with a force. Therefore, the first bonding target 110 and the second bonding target 120 can be bonded to each other in a favorable manner even at a relatively low heating temperature. Thus, heat during the heating can be suppressed from destroying the first bonding target 110 and/or the second bonding target 120 , or from causing a void at, or in the vicinity of, a portion in which the first bonding target 110 and the second bonding target 120 are bonded to each other.
  • the bonding structure 100 may be produced by use of a bonding member 10 C separate from the first bonding target 110 and the second bonding target 120 .
  • FIGS. 8A-8D are schematic views illustrating the method for producing the bonding structure 100 in this embodiment.
  • the production method in this embodiment described with reference to FIGS. 8A-8D in the preparation step, after a bonding member is formed in advance on each of the first bonding target 110 and the second bonding target 120 , a bonding member separate from the first bonding target 110 and the second bonding target 120 is prepared. Except for this, the production method in this embodiment described with reference to FIGS. 8A-8D is substantially the same as the method for producing the bonding structure 100 described above with reference to FIGS. 7A-7D . Overlapping descriptions will be omitted in order to avoid redundancy.
  • the first bonding target 110 and the second bonding target 120 are prepared (preparation step).
  • the bonding member 10 is formed on each of the first bonding target 110 and the second bonding target 120 .
  • the bonding member 10 A is formed on the surface of the first bonding target 110
  • the bonding member 10 B is formed on the surface of the second bonding target 120 .
  • the bonding member 10 is formed in advance on each of the first bonding target 110 and the second bonding target 120 .
  • the silver surface 11 c of the bonding member 10 A is exposed.
  • the bonding member 10 A may be in direct contact with the first bonding target 110 , or may be in indirect contact with the first bonding target 110 via another layer.
  • an adhesive layer may be provided between the bonding member 10 A and the first bonding target 110 .
  • the adhesive layer is formed of, for example, titanium or titanium nitride.
  • the adhesive layer has a thickness of, for example, 0.01 mm or greater and 0.05 mm or less.
  • a silver layer may be provided between the bonding member 10 A and the first bonding target 110 .
  • the silver surface 11 d of the bonding member 10 B is exposed.
  • the bonding member 10 B may be in direct contact with the second bonding target 120 , or may be in indirect contact with the second bonding target 120 via another layer.
  • An adhesive layer may be provided between the bonding member 10 B and the second bonding target 120 .
  • a silver layer may be provided between the bonding member 10 B and the second bonding target 120 .
  • the first bonding target 110 and the bonding member 10 A may be exposed to an oxygen atmosphere as necessary.
  • the bonding member 10 B is formed on the surface of the second bonding target 120 , the second bonding target 120 and the bonding member 10 B may be exposed to an oxygen atmosphere as necessary.
  • the bonding member 10 C is prepared in addition to the first bonding target 110 , the second bonding target 120 , the bonding member 10 A, and the bonding member 10 B.
  • the bonding member 10 C is like a thin film.
  • the bonding member 10 C includes the silver surface 11 a and the silver surface 11 b.
  • the bonding member 10 C in the preparation step, is separate from the first bonding target 110 and the second bonding target 120 . Therefore, the silver surface 11 a and the silver surface 11 b are exposed.
  • a stack body L including the bonding members 10 A, 10 C, and 10 B located between the first bonding target 110 and the second bonding target 120 is formed (stack body formation step).
  • the bonding member 10 A faces the bonding member 10 C, and the silver surface 11 c is in contact with the silver surface 11 a.
  • the bonding member 10 B faces the bonding member 10 C, and the silver surface 11 d is in contact with the silver surface 11 b.
  • the first bonding target 110 and the second bonding target 120 are stacked on each other via the bonding members 10 A, 10 C, and 10 B.
  • the stack body L is heated to move the liquid silver oxide to the silver surface 11 a and the silver surface 11 b, so that the bonding member 10 bonds the first bonding target 110 and the second bonding target 120 to each other. As a result, the bonding structure 100 is produced.
  • the stack body L is heated, and as a result, the liquid silver oxide is moved to the silver surfaces.
  • the bonding member 10 including the bonding members 10 A and 10 B integrated together is formed.
  • the bonding member 10 bonds the first bonding target 110 and the second bonding target 120 to each other.
  • the bonding member 10 bonds the first bonding target 110 and the second bonding target 120 to each other.
  • the bonding structure 100 is produced.
  • an interface between the two layers derived from the bonding members 10 A and 10 B may or may not be clearly specifiable.
  • the stack body L is heated by use of, for example, a hot plate, a heating furnace, or rapid thermal anneal It is preferred that the stack body L is heated at a heating temperature of 250° C. or higher and 350° C. or lower.
  • the first bonding target 110 and the second bonding target 120 may be bonded to each other by applying a pressure to the stack body L.
  • the bonding structure 100 is produced by use of the bonding members 10 A, 10 B, and 10 C each including the silver surfaces that are surface-processed by being physically supplied with a force. Therefore, the first bonding target 110 and the second bonding target 120 can be bonded to each other at a relatively low pressure.
  • the first bonding target 110 and the second bonding target 120 can be bonded to each other with no pressure or at a pressure of 1 MPa or lower.
  • the first bonding target 110 and the second bonding target 120 are bonded to each other by use of the bonding members 10 A, 10 B, and 10 C each including the silver surfaces that are surface-processed by being physically supplied with a force. Therefore, the first bonding target 110 and the second bonding target 120 can be bonded to each other in a favorable manner even at a relatively low heating temperature. Thus, heat during the heating can be suppressed from destroying the first bonding target 110 and/or the second bonding target 120 , or from causing a void at, or in the vicinity of, a portion in which the first bonding target 110 and the second bonding target 120 are bonded to each other.
  • the bonding member 10 may be formed of a polymer containing silver grains dispersed therein.
  • FIG. 9A is a schematic view of the bonding member 10 in this embodiment.
  • FIGS. 9B and 9C are schematic views illustrating a method for producing the bonding structure 100 in this embodiment.
  • the bonding member 10 contains silver grains 17 and a polymer 18 .
  • the silver grains 17 are dispersed in the polymer 18 .
  • the polymer is, for example, polyvinyl alcohol.
  • the bonding member 10 includes the silver surface 11 a and the silver surface 11 b.
  • the silver surface 11 a and the silver surface 11 b are physically supplied with a force.
  • the silver surface 11 a and the silver surface 11 b are surface-processed by being physically supplied with a force.
  • the silver surface 11 a and the silver surface 11 b are plastically deformed by being surface-processed.
  • the silver grains 17 have a volume occupying 30% or more of the total volume of the bonding member 10 . It is preferred that the silver grains 17 have a volume occupying 55% or more of the total composition of the bonding member 10 .
  • a stack body L including the bonding member 10 located between the first bonding target 110 and the second bonding target 120 is formed.
  • the first bonding target 110 is in contact with the silver surface 11 a of the bonding member 10 .
  • the second bonding target 120 is in contact with the silver surface 11 b of the bonding member 10 .
  • the first bonding target 110 and the second bonding target 120 are stacked on each other via the bonding member 10 .
  • the polymer 18 in the bonding member 10 is melted to be removed from the bonding member 10 .
  • the polymer 18 can be melted by warm water to be removed from the bonding member 10 .
  • the stack body L is heated to move the liquid silver oxide to the silver surface 11 a and the silver surface 11 b, so that the bonding member 10 bonds the first bonding target 110 and the second bonding target 120 to each other. As a result, the bonding structure 100 is produced.
  • FIGS. 10A-12D a composition of the bonding member 10 to be processed will be described.
  • FIGS. 10A, 10B, 11A, 11B, 12A, and 12B are SEM photographs of cross-sections of the silver layers 5 in a pre-rolling state.
  • FIGS. 10C, 10D, 11C, 11D, 12C, and 12D are SEM photographs of cross-sections of the bonding members 10 in a post-rolling state.
  • the scale is 50 ⁇ m.
  • FIGS. 10C, 10D, 11C, 11D, 12C, and 12D the scale is 2 ⁇ m.
  • FIG. 10A is an SEM photograph of a cross-section of a pre-rolling silver layer 5 having a thickness of 1 mm.
  • FIG. 10B is an SEM photograph of a cross-section of the silver layer 5 shown in FIG. 10A after the silver layer 5 is annealed at 400° C. for 1 hour.
  • FIG. 10C is an SEM photograph of a cross-section of a bonding member 10 obtained as a result of the silver layer 5 shown in FIG. 10B being rolled to have a thickness of 0.1 mm, the cross-section being taken along a direction perpendicular to the rolling direction (i.e., taken in a transverse direction (TD)).
  • FIG. 10D is an SEM photograph of a cross-section of the bonding member 10 obtained as a result of the silver layer 5 shown in FIG. 10B being rolled to have a thickness of 0.1 mm, the cross-section being taken along the rolling direction (RD).
  • RD rolling direction
  • FIG. 11A is an SEM photograph of a cross-section of a pre-rolling silver layer 5 having a thickness of 0.5 mm.
  • FIG. 11B is an SEM photograph of a cross-section of the silver layer 5 shown in FIG. 11A after the silver layer 5 is annealed at 400° C. for 1 hour.
  • FIG. 11C is an SEM photograph of a cross-section of a bonding member 10 obtained as a result of the silver layer 5 shown in FIG. 11B being rolled to have a thickness of 0.1 mm, the cross-section being taken along the direction (TD) perpendicular to the rolling direction.
  • FIG. 11D is an SEM photograph of a cross-section of the bonding member 10 obtained as a result of the silver layer 5 shown in FIG. 11B being rolled to have a thickness of 0.1 mm, the cross-section being taken along the rolling direction (RD).
  • RD rolling direction
  • FIG. 12A is an SEM photograph of a cross-section of a pre-rolling silver layer 5 having a thickness of 0.3 mm.
  • FIG. 12B is an SEM photograph of a cross-section of the silver layer 5 shown in FIG. 12A after the silver layer 5 is annealed at 400° C. for 1 hour.
  • FIG. 12C is an SEM photograph of a cross-section of a bonding member 10 obtained as a result of the silver layer 5 shown in FIG. 12B being rolled to have a thickness of 0.1 mm, the cross-section being taken along the direction (TD) perpendicular to the rolling direction.
  • FIG. 12D is an SEM photograph of a cross-section of the bonding member 10 obtained as a result of the silver layer 5 shown in FIG. 12B being rolled to have a thickness of 0.1 mm, the cross-section being taken along the rolling direction (RD).
  • RD rolling direction
  • the silver grains 12 in the pre-rolling silver layer 5 are large crystal grains.
  • the silver grains 12 in the pre-rolling silver layer 5 each have a size of 10 mm or longer.
  • the silver grains 12 in the post-rolling bonding member 10 are very tiny crystalline grains significantly smaller than the silver grains 12 in the pre-rolling silver layer 5 .
  • the silver grains 12 in the post-rolling bonding member 10 each have a size of several ten nanometers.
  • the number of the grain boundaries 14 in the post-rolling bonding member 10 is larger than that of the grain boundaries 14 in the pre-rolling silver layer 5 ( FIG. 10B ).
  • the number of the grain boundaries 14 in the post-rolling bonding member 10 is 10 or more per micrometer.
  • the silver grains 12 in the post-rolling bonding member 10 are very tiny crystalline grains significantly smaller than the silver grains 12 in the pre-rolling silver layer 5 .
  • the number of the grain boundaries 14 in the post-rolling bonding member 10 is larger than that of the grain boundaries 14 in the pre-rolling silver layer 5 ( FIG. 11B ).
  • the silver grains 12 in the post-rolling bonding member 10 are very tiny crystalline grains significantly smaller than the silver grains 12 in the pre-rolling silver layer 5 .
  • the number of the grain boundaries 14 in the post-rolling bonding member 10 is larger than that of the grain boundaries 14 in the pre-rolling silver layer 5 ( FIG. 12B ).
  • FIG. 13A shows measurement results of electron back-scatter diffraction (EBSD) performed on the pre-rolling silver layer 5 .
  • FIG. 13B shows measurement results of EBSD performed on the post-rolling bonding member 10 .
  • the scale is 5 ⁇ m.
  • “RD” represents the rolling direction
  • “ND” represents a direction perpendicular to the rolling direction (represents the normal direction).
  • FIG. 14 is a graph showing the relationship between the size of the silver grains 12 and the frequency.
  • the horizontal axis represents the size of the silver grains
  • the vertical axis represents the frequency.
  • the silver grains 12 in the pre-rolling silver layer 5 are large crystalline grains.
  • the silver grains 12 in the post-rolling bonding member 10 are very tiny crystalline grains significantly smaller than the silver grains 12 in the pre-rolling silver layer 5 .
  • the tiny crystalline grains significantly smaller than the silver grains 12 in the pre-rolling silver layer 5 occupy a high ratio. It is also confirmed that the silver grains 12 each have an average grain size of 1 ⁇ m or shorter.
  • the number of the grain boundaries 14 in the post-rolling bonding member 10 is larger than the number of the grain boundaries 14 in the pre-rolling silver layer 5 . Therefore, in the bonding step, a large amount of oxygen in the air can be taken through the boundaries and the defects. This can promote the generation of the liquid silver oxide in the bonding step. As a result, the first bonding target 110 and the second bonding target 120 can be bonded to each other in a favorable manner.
  • FIGS. 15A-15C , FIGS. 16A-16C , and FIGS. 17A-17C are SEM photographs of surfaces of the bonding members 10 .
  • FIGS. 15A-15C are SEM photographs of surfaces of bonding members 10 in the case where the thickness of the pre-rolling silver layer 5 is 1 mm.
  • FIGS. 16A-16C are SEM photographs of surfaces of bonding members 10 in the case where the thickness of the pre-rolling silver layer 5 is 0.5 mm.
  • FIGS. 17A-17C are SEM photographs of surfaces of bonding members 10 in the case where the thickness of the pre-rolling silver layer 5 is 0.3 mm.
  • FIGS. 15A, 16A, and 17A show the bonding members 10 heated at 250° C.
  • FIGS. 15B, 16B, and 17B show the bonding members 10 heated at 300° C.
  • FIGS. 15C, 16C, and 17C show the bonding members 10 heated at 350° C.
  • the liquid silver oxide is moved to the silver surface and gushes out therefrom.
  • the liquid silver oxide is reduced to be decomposed into silver 16 and oxygen.
  • the silver 16 pushing out at the silver surface is generally called a “hillock”. It is confirmed that regardless of whether the heating temperature is 250° C., 300° C., or 350° C., a great number of hillocks of silver 16 gush out from the silver surface.
  • the thickness of the pre-rolling silver layer 5 is 0.5 mm, it is confirmed from FIGS. 16A-16C that regardless of whether the heating temperature is 250° C., 300° C., or 350° C., a great number of hillocks of silver 16 gush out from the silver surface.
  • the thickness of the pre-rolling silver layer 5 is 0.3 mm, it is confirmed from FIGS. 17A-17C that regardless of whether the heating temperature is 250° C., 300° C., or 350° C., a great number of hillocks of silver 16 gush out from the silver surface.
  • the bonding member 10 is heated, and as a result, a great number of hillocks of silver 16 gush out from the silver surface. Therefore, the first bonding target 110 and the second bonding target 120 can be bonded to each other in a favorable manner.
  • the residual stresses of the silver sheet in a pre-rolling state and a post-rolling state were measured by use of a residual stress analyzer ( ⁇ -X360n) produced by Pulstec Industrial Co., Ltd.
  • ⁇ -X360n residual stress analyzer
  • the residual stress of a 1.0 mm-thick pre-rolling silver sheet is 14 MPa
  • the residual stress of the bonding member 10 produced by rolling the silver sheet until the silver sheet has a thickness of 0.1 mm is ⁇ 51 MPa.
  • the silver surface 11 a and the silver surface 11 b are supplied with a compressive stress. Since the silver surface 11 a and the silver surface 11 b are supplied with a compressive stress, a great number of hillocks of silver 16 can be promoted to gush out from the silver surfaces.
  • FIG. 18 is a graph showing the shear strength of the bonding structures 100 .
  • the horizontal axis represents the reduction ratio of the silver sheet, and the vertical axis represents the shear strength.
  • data A is of a bonding structure 100 produced by use of a silver sheet having a thickness of 0.1 mm.
  • Data B is of a bonding structure 100 produced by use of a bonding member 10 produced by rolling a silver sheet having a thickness of 0.3 mm until the thickness of the silver sheet is decreased to 0.1 mm.
  • Data C is of a bonding structure 100 produced by use of a bonding member 10 produced by rolling a silver sheet having a thickness of 0.5 mm until the thickness of the silver sheet is decreased to 0.1 mm.
  • Data D is of a bonding structure 100 produced by use of a bonding member 10 produced by rolling a silver sheet having a thickness of 1.0 mm until the thickness of the silver sheet is decreased to 0.1 mm.
  • FIG. 19 is a graph showing the relationship between the bonding temperature and the shear strength of the bonding structure 100 .
  • FIG. 19 shows data of a bonding structure 100 produced by use of a bonding member 10 produced by rolling a silver sheet having a thickness of 1.0 mm until the thickness of the silver sheet is decreased to 0.1 mm.
  • FIG. 20 is a graph showing the relationship between the bonding pressure and the shear strength of the bonding structure 100 .
  • FIG. 20 shows data of a bonding structure 100 produced by use of a bonding member 10 produced by rolling a silver sheet having a thickness of 1.0 mm until the thickness of the silver sheet is decreased to 0.1 mm.
  • the bonding member 10 is used to bond the first bonding target 110 and the second bonding target 120 to each other, it is preferred to, before the bonding step, polish the bonding member 10 , the first bonding target 110 , and the second bonding target 120 .
  • FIG. 21 is a graph showing the shear strength of the bonding structures 100 .
  • the horizontal axis represents the pre-rolling (original) thickness of the specimens
  • the vertical axis represents the shear strength.
  • the bars with no hatching represent the results of non-polished specimens
  • the hatched bars represent the results of polished specimens.
  • the non-polished specimens have a surface roughness of about 1.0 ⁇ m.
  • the polished specimens are formed as follows. Before the bonding step, the surfaces, of the second bonding target 120 and the bonding member 10 , which are to be in contact with each other are polished until the surface roughness thereof is decreased to about 0.3 ⁇ m.
  • the bonding member 10 may be produced by processing a porous silver sheet including pores.
  • FIG. 22A is an SEM photograph of a surface of a silver layer 5 .
  • FIG. 22B is a schematic view illustrating a bonding member 10 .
  • FIGS. 23A-23C are SEM photographs of a surface of a post-rolling bonding member 10 .
  • FIGS. 24A-24C are SEM photographs of a cross-section, taken along a direction TD perpendicular to the rolling direction, of the post-rolling bonding member 10 .
  • FIGS. 25A-25C are SEM photographs of a cross-section, taken along the rolling direction RD, of the post-rolling bonding member 10 .
  • FIGS. 22A is an SEM photograph of a surface of a silver layer 5 .
  • FIG. 22B is a schematic view illustrating a bonding member 10 .
  • FIGS. 23A-23C are SEM photographs of a surface of a post-rolling bonding member 10 .
  • FIGS. 24A-24C are SEM photographs of a cross
  • the scale is 5 ⁇ m. In FIGS. 23B, 24B, and 25B , the scale is 2 ⁇ m. In FIGS. 23C, 24C, and 25C , the scale is 1 ⁇ m.
  • FIGS. 26A-26C are SEM photographs of a surface of the bonding member 10 .
  • the scale is 20 ⁇ m.
  • the scale is 10 ⁇ m.
  • the scale is 1 ⁇ m.
  • FIG. 27 is a graph showing the relationship between the heating (bonding) temperature and the shear strength.
  • the horizontal axis represents the heating temperature
  • the vertical axis represents the shear strength.
  • the silver layer 5 is a porous silver sheet. As shown in FIG. 22A , the silver layer 5 includes a great number of pores 8 .
  • the pores 8 each have a size of, for example, 1 mm or longer and 3 mm or shorter.
  • the surface of the silver layer 5 is physically supplied with a force to be processed, such that the number of the pores 8 at the surface of the silver layer 5 is smaller than in a pre-processing state.
  • the silver layer 5 is rolled to produce the bonding member 10 .
  • the porous silver sheet has a thickness of 0.5 mm and is rolled until having a thickness of 0.1 mm to produce the bonding member 10 .
  • the silver grains 12 in the bonding member 10 are very tiny crystalline grains.
  • the silver grains 12 in the post-rolling bonding member 10 each have a size of several ten nanometers. As shown in FIGS. 23A-23C , the number of the grain boundaries 14 in the post-rolling bonding member 10 is 10 or more per micrometer.
  • the silver grains 12 in the bonding member 10 are very tiny crystalline grains.
  • the silver grains 12 in the post-rolling bonding member 10 each have a size of several ten nanometers. As shown in FIGS. 24A-24C , the number of the grain boundaries 14 in the post-rolling bonding member 10 is 10 or more per micrometer.
  • the silver grains 12 in the bonding member 10 are very tiny crystalline grains.
  • the silver grains 12 in the post-rolling bonding member 10 each have a size of several ten nanometers. As shown in FIGS. 25A-25C , the number of the grain boundaries 14 in the post-rolling bonding member 10 is 10 or more per micrometer.
  • the pores 8 are eliminated from the entirety of the bonding member 10 and very tiny crystalline grains are formed in the entirety of the bonding member 10 as a result of processing (rolling) the porous silver sheet. It is also confirmed that a great number of tiny grain boundaries are formed in the entirety of the bonding member 10 .
  • FIGS. 26A-26C are SEM photographs of a surface of the bonding member 10 shown in FIGS. 24A-26C after the bonding member 10 is heated.
  • the bonding member 10 was heated at a heating temperature of 250° C. for 30 minutes. From FIGS. 26A-26C , it is confirmed that when the bonding member 10 is heated, a great number of hillocks of silver 16 gush out at the silver surface.
  • FIG. 27 is as graph showing the relationship between the heating (bonding) temperature and the shear strength of a bonding structure 100 produced by use of the bonding member 10 shown in FIGS. 24A-26C .
  • the shear strength is increased. In the case where the heating temperature is 250° C., the shear strength is 1.8 MPa to 8.88 MPa. In the case where the heating temperature is 300° C., the shear strength is 18.88 MPa to 27.77 MPa. In the case where the heating temperature is 350° C., the shear strength is 27.77 MPa to 59.77 MPa.
  • the bonding structure 100 has a large shear strength, and thus the first bonding target 110 and the second bonding target 120 are bonded to each other in a favorable manner.
  • the shear strength is 59.77 MPa at the highest, and the first bonding target 110 and the second bonding target 120 are bonded to each other in a highly favorable manner.
  • the bonding structures 100 described above with reference to FIGS. 10A-27 are produced by use of the rolled bonding members 10 .
  • a bonding member 10 produced by grinding (polishing) the surface of the silver layer 5 may be used to produce a bonding structure 100 .
  • FIGS. 28A-28D are schematic views illustrating a method for producing the bonding structure 100 according to the present invention.
  • FIGS. 29A-29D are SEM photographs of cross-sections corresponding to FIGS. 28A-28D .
  • FIG. 30A-30C are SEM photographs of cross-sections of, and in the vicinity of, an interface between the bonding member 10 A and the bonding member 10 B.
  • FIG. 31A is a graph showing the relationship between the heating time and the shear strength.
  • FIG. 31B is a graph showing the relationship between the heating temperature and the shear strength.
  • FIGS. 33A and 33B are SEM photographs of cross-sections of, and in the vicinity of, an interface between the bonding member 10 A and the bonding member 10 B.
  • FIGS. 33C and 33D are SEM photographs of cross-sections of, and in the vicinity of, an interface between bonding members 510 A and 510 B in comparative examples.
  • the first bonding target 110 is prepared.
  • the first bonding target 110 is a copper substrate.
  • the adhesive layer 130 A is formed on the surface of the first bonding target 110 by sputtering.
  • the adhesive layer 130 A is formed of titanium.
  • the silver layer 140 A is formed on the surface of the adhesive layer 130 A.
  • the silver layer 140 A is formed of silver.
  • the adhesive layer 130 A (titanium) and the silver layer 140 A (silver) are stacked on the surface of the first bonding target 110 (copper substrate).
  • the second bonding target 120 is prepared.
  • the second bonding target 120 is a silicon substrate.
  • the adhesive layer 130 B is formed on the surface of the second bonding target 120 by sputtering.
  • the adhesive layer 130 B is formed of titanium.
  • the silver layer 140 B is formed on the surface of the adhesive layer 130 B.
  • the silver layer 140 B is formed of silver.
  • a silver layer 5 A is formed on a surface of the silver layer 140 A.
  • a silver layer 5 B is formed on a surface of the silver layer 140 B.
  • the silver layer 5 A and the silver layer 5 B are silver pastes.
  • the silver layer 5 A and the silver layer 5 B are heated to be pre-sintered.
  • the pre-sintered silver layer 5 A includes a great number of pores 8 .
  • a surface of the silver layer 5 A and a surface of the silver layer 5 B are ground (polished).
  • the silver layer 5 A and the silver layer 5 B respectively become the bonding member 10 A and the bonding member 10 B.
  • FIG. 29C as a result of grinding the surface of the silver layer 5 A, the pores 8 are eliminated from the surface, and the vicinity thereof, of the bonding member 10 A.
  • the first bonding target 110 and the second bonding target 120 are stacked on each other such that the bonding member 10 A and the bonding member 10 B are in contact with each other.
  • the stack body L is formed.
  • the stack body L is heated while being pressurized to bond the first bonding target 110 and the second bonding target 120 to each other.
  • the bonding structure 100 is produced.
  • no pores 8 are formed at, or in the vicinity of, the interface between the bonding member 10 A and the bonding member 10 B.
  • the first bonding target 110 and the second bonding target 120 are bonded to each other in a favorable manner.
  • FIG. 30A provides SEM photographs of a cross-section of, and the vicinity thereof, the interface between the bonding member 10 A and the bonding member 10 B in the bonding structure 100 heated at a heating temperature of 250° C. for 2 hours in the bonding step.
  • FIG. 30B provides SEM photographs of a cross-section of, and the vicinity thereof, the interface between the bonding member 10 A and the bonding member 10 B in the bonding structure 100 heated at a heating temperature of 250° C. for 4 hours in the bonding step.
  • FIG. 30C provides SEM photographs of a cross-section of, and the vicinity thereof, the interface between the bonding member 10 A and the bonding member 10 B in the bonding structure 100 heated at a heating temperature of 350° C. for 2 hours in the bonding step.
  • the surfaces of the bonding member 10 A and the bonding member 10 B are ground, and therefore, no pore 8 is formed at, or in the vicinity of, the interface between the bonding member 10 A and the bonding member 10 B.
  • a small number of non-bonded portions are present at, or in the vicinity of, the interface between the bonding member 10 A and the bonding member 10 B.
  • the surfaces of the bonding member 10 A and the bonding member 10 B are ground, and therefore, no pore 8 is formed at, or in the vicinity of, the interface between the bonding member 10 A and the bonding member 10 B.
  • the non-bonded portions at, or in the vicinity of, the interface between the bonding member 10 A and the bonding member 10 B are smaller than in the lower photograph of FIG. 30A .
  • FIG. 32 is a graph showing the relationship between the bonding area and the shear strength.
  • Data L 1 represents the shear strength of a bonding structure 100 according to the present invention.
  • the surface of the bonding member 10 A and the surface of the bonding member 10 B in the bonding structure 100 are ground (polished).
  • Data L 2 represents the shear strength of a bonding structure in a comparative example.
  • the surfaces of the silver layer are ground (polished).
  • the surface of the bonding member 10 A and the surface of the bonding member 10 B are ground (polished). Therefore, the silver layer 140 B and the bonding member 10 A are bonded to each other in a favorable manner.
  • FIGS. 1-33D Embodiments of the present invention are described above with reference to the drawings ( FIGS. 1-33D ).
  • the present invention is not limited to any of the above-described embodiments, and may be carried out in any of various forms without departing from the gist thereof.
  • the drawings mainly illustrate the elements schematically for easier understanding.
  • the thickness, length, number, and the like of each of the elements illustrated in the drawings may be different from the actual thickness, length, number, and the like for the reason related to the drafting of the drawings.
  • the material, shape, size, or the like of each of the elements described in the embodiments is merely an example and is not specifically limiting, and may be altered in any of various manners without substantially departing from the effect of the present invention.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Laminated Bodies (AREA)
  • Die Bonding (AREA)
US16/487,924 2017-02-23 2018-02-23 Bonding member, method for producing bonding member and method for producing bonding structure Abandoned US20200039007A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017032043 2017-02-23
JP2017-032043 2017-02-23
PCT/JP2018/006721 WO2018155633A1 (ja) 2017-02-23 2018-02-23 接合材、接合材の製造方法および接合構造体の作製方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/006721 A-371-Of-International WO2018155633A1 (ja) 2017-02-23 2018-02-23 接合材、接合材の製造方法および接合構造体の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US17/812,352 Division US20220347799A1 (en) 2017-02-23 2022-07-13 Bonding member, method for producing bonding member and method for producing bonding structure

Publications (1)

Publication Number Publication Date
US20200039007A1 true US20200039007A1 (en) 2020-02-06

Family

ID=63253995

Family Applications (2)

Application Number Title Priority Date Filing Date
US16/487,924 Abandoned US20200039007A1 (en) 2017-02-23 2018-02-23 Bonding member, method for producing bonding member and method for producing bonding structure
US17/812,352 Pending US20220347799A1 (en) 2017-02-23 2022-07-13 Bonding member, method for producing bonding member and method for producing bonding structure

Family Applications After (1)

Application Number Title Priority Date Filing Date
US17/812,352 Pending US20220347799A1 (en) 2017-02-23 2022-07-13 Bonding member, method for producing bonding member and method for producing bonding structure

Country Status (4)

Country Link
US (2) US20200039007A1 (de)
EP (1) EP3587020A1 (de)
JP (1) JP6800499B2 (de)
WO (1) WO2018155633A1 (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109332872A (zh) * 2018-11-27 2019-02-15 中国航空制造技术研究院 提高Ti2AlNb合金扩散焊效率的方法
US20220230988A1 (en) * 2019-05-29 2022-07-21 Osaka University Bonding structure production method and bonding structure
US20220347799A1 (en) * 2017-02-23 2022-11-03 Osaka University Bonding member, method for producing bonding member and method for producing bonding structure
CN117248197A (zh) * 2023-09-21 2023-12-19 江苏富乐华功率半导体研究院有限公司 一种表面具有微纳结构的银焊片制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7322369B2 (ja) * 2018-09-21 2023-08-08 富士電機株式会社 半導体装置の製造方法
US11373976B2 (en) * 2019-08-02 2022-06-28 Rockwell Collins, Inc. System and method for extreme performance die attach

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5436884B2 (de) * 1974-04-04 1979-11-12
JPS54151536A (en) * 1978-05-22 1979-11-28 Asahi Chem Ind Co Ltd Production of both side clad steel plate
JP3323311B2 (ja) * 1993-12-28 2002-09-09 旭化成株式会社 爆発圧着クラッド材およびその製法
KR0141337B1 (ko) * 1994-09-05 1998-07-15 김수광 소우블레이드용 세그먼트
JP2008010703A (ja) 2006-06-30 2008-01-17 Fuji Electric Holdings Co Ltd 半導体装置の部品間接合方法
EP3678198A1 (de) * 2008-01-17 2020-07-08 Nichia Corporation Verfahren zur herstellung einer elektronischen vorrichtung
JP5673536B2 (ja) * 2009-07-21 2015-02-18 日亜化学工業株式会社 導電性材料の製造方法、その方法により得られた導電性材料、その導電性材料を含む電子機器、および発光装置
TWI499647B (zh) * 2012-04-26 2015-09-11 Univ Osaka 透明導電性油墨及透明導電圖型之形成方法
JP6347385B2 (ja) * 2013-11-29 2018-06-27 国立大学法人大阪大学 銅材の接合方法
US10043775B2 (en) * 2014-02-10 2018-08-07 Mitsubishi Electric Corporation Bonding material, bonding method and semiconductor device for electric power
EP3587020A1 (de) * 2017-02-23 2020-01-01 Osaka University Verbindungselement, verfahren zur herstellung des verbindungselements und verfahren zur herstellung der verbindungsstruktur
JP7154655B2 (ja) * 2019-05-29 2022-10-18 国立大学法人大阪大学 接合構造体の製造方法、及び接合構造体

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220347799A1 (en) * 2017-02-23 2022-11-03 Osaka University Bonding member, method for producing bonding member and method for producing bonding structure
CN109332872A (zh) * 2018-11-27 2019-02-15 中国航空制造技术研究院 提高Ti2AlNb合金扩散焊效率的方法
US20220230988A1 (en) * 2019-05-29 2022-07-21 Osaka University Bonding structure production method and bonding structure
CN117248197A (zh) * 2023-09-21 2023-12-19 江苏富乐华功率半导体研究院有限公司 一种表面具有微纳结构的银焊片制备方法

Also Published As

Publication number Publication date
US20220347799A1 (en) 2022-11-03
WO2018155633A1 (ja) 2018-08-30
EP3587020A4 (de) 2020-01-01
JP6800499B2 (ja) 2020-12-16
JPWO2018155633A1 (ja) 2020-02-27
EP3587020A1 (de) 2020-01-01

Similar Documents

Publication Publication Date Title
US20220347799A1 (en) Bonding member, method for producing bonding member and method for producing bonding structure
US20080087710A1 (en) RAPID, REDUCED TEMPERATURE JOINING OF ALUMINA CERAMICS WITH Ni/Nb/Ni INTERLAYERS
EP3598485A2 (de) Gebundenes substrat und verfahren zur herstellung eines gebundenes substrats
JP6455896B1 (ja) 放熱板及びその製造方法
TWI523828B (zh) A bonding material and a joining structure
KR20190042676A (ko) 방열판 및 그 제조 방법
TW201733792A (zh) 使用金屬奈米粒子之金屬接合結構及金屬接合方法以及金屬接合材料
KR20150106429A (ko) 시료 유지구
JP2007142126A (ja) 複合材料及び半導体搭載用放熱基板、及びそれを用いたセラミックパッケージ
Schu¨ ler et al. Direct silver bonding–an alternative for substrates in power semiconductor packaging
Wu et al. Low-pressure solid-state bonding technology using fine-grained silver foils for high-temperature electronics
Flötgen et al. Wafer bonding using Cu–Sn intermetallic bonding layers
JP5950791B2 (ja) 耐食性Ｎｉ基合金とアルミニウムまたはアルミニウム合金からなる複合部材
JP6897236B2 (ja) 接合用成形体及びその製造方法
JP5877276B2 (ja) 接合構造および電子部材接合構造体
TW201729306A (zh) 接合材料及其製作方法與接合結構的製作方法
JPWO2015118790A1 (ja) 接合材の製造方法、接合方法、および電力用半導体装置
JP2005022966A (ja) 窒化アルミニウム接合体及びその製造方法
JP6969466B2 (ja) 接合用成形体の製造方法及びこの方法で得た接合用成形体を用いた接合方法
Schellscheidt et al. Throughput Optimization of a Sintering Die Attach Process
JP2015080812A (ja) 接合方法
JP5286507B2 (ja) Ｃｒ−Ｃｕ合金板の製造方法
Flötgen et al. Cu-Sn transient liquid phase wafer bonding for MEMS applications
JP6522952B2 (ja) 接合体およびその製造方法
JP6323128B2 (ja) 回路基板の製造方法

Legal Events

Date Code Title Description
AS Assignment

Owner name: OSAKA UNIVERSITY, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SUGANUMA, KATSUAKI;CHEN, CHUANTONG;ISHINA, TOSHIYUKI;AND OTHERS;SIGNING DATES FROM 20190808 TO 20190819;REEL/FRAME:050130/0889

STPP Information on status: patent application and granting procedure in general

Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: FINAL REJECTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION