US20190153599A1 - Substrate processing method and substrate processing device - Google Patents

Substrate processing method and substrate processing device Download PDF

Info

Publication number
US20190153599A1
US20190153599A1 US16/092,683 US201716092683A US2019153599A1 US 20190153599 A1 US20190153599 A1 US 20190153599A1 US 201716092683 A US201716092683 A US 201716092683A US 2019153599 A1 US2019153599 A1 US 2019153599A1
Authority
US
United States
Prior art keywords
gas
processing
substrate
processing parts
mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US16/092,683
Other languages
English (en)
Inventor
Satoshi TODA
Tetsuro Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Assigned to TOKYO ELECTRON LIMITED reassignment TOKYO ELECTRON LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TAKAHASHI, TETSURO, TODA, SATOSHI
Publication of US20190153599A1 publication Critical patent/US20190153599A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Definitions

  • the present disclosure relates to a substrate processing method and a substrate processing device for processing a process on a target substrate.
  • Semiconductor devices are manufactured by repeatedly performing various processes such as an etching process, a film-forming process and the like, on a semiconductor wafer (hereinafter simply referred to as a wafer) which is a target substrate.
  • a semiconductor wafer hereinafter simply referred to as a wafer
  • a single wafer type processing apparatus for processing target substrates one by one has been conventionally widely used.
  • a processing apparatus is required to increase throughput, and a processing apparatus for performing the substrate process on two or more target substrates at a time while maintaining the platform of the single wafer type processing apparatus has also been used (see, e.g., Patent Document 1).
  • a substrate mounting table on which a plurality of target substrates is mounted is installed inside a chamber.
  • a plurality of process regions and a plurality of separation regions that separates the plurality of process regions from each other are alternately defined above the substrate mounting table along a circumferential direction of the substrate mounting table.
  • the substrate mounting table is rotated such that the plurality of target substrates pass through the regions in the order of “process region separation region process region separation region, . . . ”. In this way, the plurality of target substrates is processed under different gas conditions.
  • the present disclosure provides some embodiments of a substrate processing method and a substrate processing device, which are capable of performing a substrate process on a plurality of target substrates under different gas conditions with high precision using a common exhaust mechanism, when processing the plurality of target substrates by a plurality of processing parts.
  • a substrate processing method for performing a predetermined process on a plurality of target substrates under a vacuum atmosphere using a substrate processing device that includes a plurality of processing parts for performing a substrate process on each of the plurality of target substrates, a gas supply mechanism for separately supplying gases to the plurality of processing parts, and a common exhaust mechanism for exhausting the gases inside the plurality of processing parts in a collective manner.
  • the method includes: performing a first mode in which a first gas is supplied to a portion of the plurality of processing parts and a second gas different from the first gas is supplied to another portion of the plurality of processing parts, while controlling the common exhaust mechanism so as to exhaust a processing gas in common from the plurality of processing parts; and subsequently, performing a second mode in which the first gas as the processing gas is supplied to all of the plurality of processing parts under the same gas conditions, while exhausting the processing gas from the plurality of processing parts in a collective manner by the common exhaust mechanism, wherein, in the first mode, a pressure difference is prevented from occurring between the plurality of processing parts.
  • an amount of the second gas supplied to the another portion of the plurality of processing parts may be controlled so as to prevent the pressure difference from occurring between the portion of the plurality of processing parts and the another portion of the plurality of processing parts.
  • At least one of an inert gas and a non-reactive gas that is not reactive with the plurality of target substrates may be used as the second gas.
  • the substrate process using the first gas which is the processing gas for the plurality of target substrates may be performed; and in the another portion of the plurality of processing parts, the substrate process may not be performed by supplying the second gas as a supplement gas instead of supplying the first gas which is the processing gas for the plurality of target substrates.
  • the method may further include, prior to the performing the first mode, stabilizing pressures of the plurality of processing parts by regulating the pressures of the plurality of processing parts with a pressure regulating gas.
  • a flow rate of the pressure regulating gas may be set to a level at which the first gas used as the processing gas and the second gas used as the supplement gas are suppressed from backwardly diffusing between the plurality of processing parts, and a flow of the pressure regulating gas toward the common exhaust mechanism is formed, in the first mode of the substrate process.
  • a portion of the gases supplied during the substrate process, which is not used for the substrate process, may be used as the pressure regulating gas, and the flow rate of the pressure regulating gas in the stabilizing pressures may be set to be larger than a flow rate of the pressure regulating gas used in the substrate process.
  • the flow rate of the pressure regulating gas in the stabilizing pressures may be set to be three times or more the flow rate of the pressure regulating gas used in the substrate process.
  • a dilution gas for diluting the first gas may be used as the second gas.
  • a substrate processing method for performing a predetermined process on a plurality of target substrates under a vacuum atmosphere using a substrate processing device that includes a plurality of processing parts for performing a substrate process on each of the plurality of target substrates, a gas supply mechanism for separately supplying gases to the plurality of processing parts, and a common exhaust mechanism for exhausting the gases inside the plurality of processing parts in a collective manner.
  • the method includes: performing a first mode in which an HF gas and an NH 3 gas as processing gases are supplied to a portion of the plurality of processing parts so as to perform an etching process, and instead of the HF gas, at least one of an inert gas and a non-reactive gas which is not reactive with the plurality of target substrates is supplied to another portion of the plurality of processing parts so as not to perform the etching process, while controlling the common exhaust mechanism so as to exhaust the processing gases in common from the plurality of processing parts; and subsequently, performing a second mode in which the HF gas and the NH 3 gas as the processing gases are supplied to all of the plurality of processing parts so as to perform the etching process, while exhausting the processing gases in common from the plurality of processing parts in a collective manner by the common exhaust mechanism, wherein, in the first mode, the supply of the gases is performed to prevent a pressure difference from occurring between the plurality of processing parts.
  • the HF gas and the NH 3 gas as the processing gases and the inert gas may be supplied to the portion of the plurality of processing parts, and supplying the inert gas or the inert gas and the NH 3 gas to the another portion of the plurality of processing parts.
  • the inert gas may be used as a supplement gas for regulating pressures of the portion of the plurality of processing parts and the another portion of the plurality of processing parts.
  • the method may further include, prior to the performing a first mode, stabilizing pressures of the plurality of processing parts by regulating the pressures of the plurality of processing parts with the inert gas or the inert gas and the NH 3 gas as pressure regulating gases.
  • flow rates of the pressure regulating gases may be set to a level at which the processing gases and the inert gas are suppressed from backwardly diffusing between the plurality of processing parts, and a flow of the pressure regulating gases toward the common exhaust mechanism is formed, in the first mode of the substrate process.
  • the flow rates of the pressure regulating gases in the stabilizing pressures may be set to be larger than flow rates of the pressure regulating gases used in the substrate process.
  • the flow rates of the pressure regulating gases in the stabilizing pressures may be set to be three times or more the flow rates of the pressure regulating gases used in the substrate process.
  • a substrate processing device for performing a predetermined process on a plurality of target substrates under a vacuum atmosphere, including: a plurality of processing parts, each of which configured to perform a substrate process on each of the plurality of target substrates; a gas supply mechanism configured to separately supply processing gases to the plurality of processing parts; a common exhaust mechanism configured to exhaust the processing gases inside the plurality of processing parts in a collective manner; and a controller configured to control the gas supply mechanism and the common exhaust mechanism to execute the substrate process on the plurality of target substrates in a sequence of first and second modes, wherein the first mode involves supplying a first gas to a portion of the plurality of processing parts and supplying a second gas different from the first gas to another portion of the plurality of processing parts, while controlling the common exhaust mechanism so as to exhaust the processing gas in common from the plurality of processing parts, and the second mode involves supplying the first gas as the processing gases to all of the plurality of processing parts under the same gas conditions, while exhausting
  • a substrate processing device for performing a predetermined process on a plurality of target substrates under a vacuum atmosphere, including: a plurality of processing parts, each of which configured to perform a substrate process on each of the plurality of target substrates; a gas supply mechanism configured to separately supply processing gases to the plurality of processing parts; a common exhaust mechanism configured to exhaust the processing gases inside the plurality of processing parts in a collective manner; and a controller configured to control the gas supply mechanism and the common exhaust mechanism to execute the substrate process on the plurality of target substrates in a sequence of first and second modes, wherein the first mode involves supplying an HF gas and an NH 3 gas as the processing gases to a portion of the plurality of processing parts so as to perform an etching process, and instead of the HF gas, supplying at least one of an inert gas and a non-reactive gas which is not reactive with the plurality of target substrates to another portion of the plurality of processing parts so as not to perform the etching
  • a storage medium storing a program that operates on a computer and controls a substrate processing device that includes a plurality of processing parts for performing a substrate process on each of a plurality of target substrates, a gas supply mechanism for separately supplying gases to the plurality of processing parts, and a common exhaust mechanism for exhausting the gases inside the plurality of processing parts in a collective manner, wherein the program, when executed, causes the computer to control the substrate processing device so as to perform a substrate processing method.
  • the method includes: performing a first mode in which a first gas is supplied to a portion of the plurality of processing parts and a second gas different from the first gas is supplied to another portion of the plurality of processing parts, while controlling the common exhaust mechanism so as to exhaust a processing gas in common from the plurality of processing parts; and subsequently, performing a second mode in which the first gas as the processing gas is supplied to all of the plurality of processing parts under the same gas conditions, while exhausting the processing gas from the plurality of processing parts in a collective manner by the common exhaust mechanism, wherein, in the first mode, a pressure difference is prevented from occurring between the plurality of processing parts.
  • FIG. 1 is a sectional view illustrating an example of a substrate processing device according to an embodiment of the present disclosure.
  • FIG. 2 is a system configuration view illustrating a configuration example of a gas supply mechanism.
  • FIG. 3A is a sectional view for explaining a substrate processing operation in a common substrate processing mode by a COR processing apparatus according to an embodiment of the present disclosure.
  • FIG. 3B is a sectional view for explaining a substrate processing operation in an independent substrate processing mode by the COR processing apparatus according to the embodiment of the present disclosure.
  • FIG. 4 is a view schematically illustrating a substrate processing mode according to a reference example.
  • FIG. 5 is a flow chart illustrating an example of a process sequence in the substrate processing device of FIG. 1 .
  • FIG. 6 is a timing chart illustrating a specific gas flow when implementing an example of a sequence in the substrate processing device of FIG. 1 .
  • FIG. 7 is a timing chart illustrating a specific gas flow when implementing another example of the sequence in the substrate processing device of FIG. 1 .
  • FIG. 8 is a view for explaining the effect of the sequence of FIG. 7 .
  • FIG. 9 is a view schematically illustrating an example of a chamber configuration of a substrate processing device.
  • FIG. 10 is a view schematically illustrating another example of the chamber configuration of the substrate processing device.
  • FIG. 1 is a sectional view illustrating an example of a substrate processing device according to an embodiment of the present disclosure.
  • a COR processing apparatus which performs a chemical oxide removal (COR) process (etching process) will be described as the substrate processing device.
  • COR chemical oxide removal
  • a typical example of the COR process is a substrate process of supplying a gas including an HF gas and a gas including an NH 3 gas onto an oxide film existing on a surface of a substrate such as a silicon wafer inside a chamber, thus removing the oxide film from the surface of the silicon wafer.
  • a COR processing apparatus 100 includes a hermetically sealed chamber 10 .
  • the chamber 10 is made of, for example, aluminum or an aluminum alloy, and includes a chamber main body 51 and a lid 52 .
  • the chamber main body 51 includes a lateral wall portion 51 a and a bottom portion 51 b .
  • An upper portion of the chamber main body 51 is opened and closed by the lid 52 .
  • the lateral wall portion 51 a and the lid 52 are sealed by a seal member 51 c to secure the airtightness of the chamber 10 .
  • Two processing parts 11 a and 11 b for performing a substrate process on a plurality of target substrates are installed inside the chamber 10 .
  • the two processing parts 11 a and 11 b include substrate mounting tables 61 a and 61 b , respectively. Wafers Wa and Wb as target substrates are mounted on the respective substrate mounting tables 61 a and 61 b in a horizontal posture.
  • Gas introduction members 12 a and 12 b for introducing a processing gas into the chamber 10 are installed above the substrate mounting tables 61 a and 61 b , respectively.
  • the gas introduction members 12 a and 12 b are installed inward of the lid 52 .
  • the gas introduction member 12 a and the substrate placing table 61 a face each other, and the gas introduction member 12 b and the substrate placing table 61 b face each other.
  • a cylindrical inner wall 71 a is installed so as to surround the gas introduction member 12 a and the substrate mounting table 61 a
  • a cylindrical inner wall 71 b is installed so as to surround the gas introduction member 12 b and the substrate mounting table 61 b .
  • the inner walls 71 a and 71 b are installed to extend from the inner side of an upper wall of the lid 52 to the bottom portion 51 b of the chamber main body 51 .
  • Upper portions of the inner walls 71 a and 71 b constitute lateral walls of the gas introduction members 12 a and 12 b , respectively.
  • a space between the gas introduction member 12 a and the substrate mounting table 61 a and a space between the gas introduction member 12 b and the substrate mounting table 61 b are substantially sealed by the inner walls 71 a and 71 b , respectively. These spaces constitute process spaces S in which the wafers Wa and Wb are subjected to the substrate process, respectively.
  • a gas supply mechanism 14 for supplying a gas to each of the gas introduction members 12 a and 12 b , an exhaust mechanism 15 for exhausting the interior of the chamber 10 , and a control part 16 for controlling the COR processing apparatus 100 are installed outside the chamber 10 .
  • a loading/unloading port (not shown) through which the wafer W is loaded into and unloaded is formed in the lateral wall portion 51 a of the chamber main body 51 .
  • the loading/unloading port can be opened and closed by a gate valve (not shown).
  • a loading/unloading port (not shown) is also formed in each of the inner walls 71 a and 72 b and can be opened and closed by a shutter (not shown).
  • Each of the processing parts 1 a and 11 b has substantially a circular shape.
  • Each of the substrate mounting tables 61 a and 61 b is supported by a base block 62 .
  • the base block 62 is fixed to the bottom portion 51 b of the chamber main body 51 .
  • a temperature regulator 63 for regulating a temperature of the wafer W is installed inside each of the substrate mounting tables 61 a and 61 b .
  • the temperature regulator 63 is provided with a pipeline through which, for example, a temperature regulating medium (for example, water) circulates. By heat exchange with the temperature regulating medium flowing in the pipeline, the temperature of the wafer W is controlled.
  • a plurality of lifting pins (not shown) used to transfer the wafer W are installed in the substrate mounting tables 61 a and 61 b so as to be moved upward and downward on a wafer mounting surface.
  • the gas supply mechanism 14 supplies a processing gas, such as an HF gas or an NH 3 gas, and an inert gas (dilution gas), such as an Ar gas or a N 2 gas, to the processing parts 11 a and 11 b via the gas introduction members 12 a and 12 b , respectively.
  • the gas supply mechanism 14 includes gas supply sources, supply pipes, valves, flow rate controllers represented by mass flow controllers and so on, which correspond to the respective gases.
  • FIG. 2 is a system configuration view illustrating an example of a system configuration of the gas supply mechanism 14 .
  • the gas supply mechanism 14 includes an Ar gas supply source 141 , an HF gas supply source 142 , an N 2 gas supply source 143 and an NH 3 gas supply source 144 as the gas supply sources.
  • the HF gas supplied from the HF gas supply source 142 is diluted with an Ar gas supplied from the Ar gas supply source 141 and then supplied to the gas introduction members 12 a and 12 b .
  • the NH 3 gas supplied from the NH 3 gas supply source 144 is also diluted with the N 2 gas supplied from the N 2 gas supply source 143 and then supplied to the gas introduction members 12 a and 12 b.
  • An HF gas supply pipe 145 through which the HF gas flows is branched into two HF gas supply pipes 145 a and 145 b which are respectively connected to a supply pipe 146 a connected to the gas introduction member 12 a and a supply pipe 146 b connected to the gas introduction member 12 b .
  • An Ar gas supply pipe 147 through which the Ar gas flows is branched into two Ar gas supply pipes 147 a and 147 b which are respectively connected to the HF gas supply pipes 145 a and 145 b .
  • the HF gas can be diluted with the Ar gas.
  • an NH 3 gas supply pipe 148 through which the NH 3 gas flows is branched into two NH 3 gas supply pipes 148 a and 148 b which are respectively connected to the supply pipes 146 a and 146 b .
  • a N 2 gas supply pipe 149 through which the N 2 gas flows is branched into two N 2 gas supply pipes 149 a and 149 b which are respectively connected to the NH 3 gas supply pipes 148 a and 148 b .
  • the NH 3 gas can be diluted with the N 2 gas.
  • the Ar gas and the N 2 gas are also used as a purge gas or as a supplement gas for pressure regulation to be described later.
  • Mass flow controllers (MFCs) 150 a to 150 h and opening/closing valves 151 a to 151 h for opening/closing the respective supply pipes are respectively installed in the HF gas supply pipes 145 a and 145 b , the Ar gas supply pipes 147 a and 147 b , the NH 3 gas supply pipes 148 a and 148 b , and the N 2 gas supply pipes 149 a and 149 b .
  • the MFCs 150 a to 150 h and the opening/closing valves 151 a to 151 h can be controlled by the control part 16 independently of each other.
  • both the HF gas and the NH 3 gas are supplied to each of the gas introduction members 12 a and 12 b .
  • the control part 16 controls all the opening/closing valves to be opened, as shown in the following “Case a”.
  • the opening/closing valves may be controlled such that conditions of gases to be supplied to the processing parts 11 a and 11 b via the gas introduction members 12 a and 12 b are different from each other.
  • the opening/closing valves may be controlled as shown in the following “Case b” and “Case c”.
  • Opening/closing valve 151a (Ar) Opened Opening/closing valve 151c (HF) Opened Opening/closing valve 151e (N 2 ) Opened Opening/closing valve 151g (NH 3 ) Opened Supply system to gas introduction member 12b Opening/closing valve 151b (Ar) Opened Opening/closing valve 151d (HF) Closed Opening/closing valve 151f (N 2 ) Opened Opening/closing valve 151h (NH 3 ) Closed
  • the HF gas and the NH 3 gas are supplied from the gas introduction member 12 a to the processing part 11 a , together with the Ar gas and the N 2 gas which are inert gases, respectively, while only the Ar gas and the N 2 gas which are inert gases are supplied from the gas introduction member 12 b to the processing part 11 b .
  • the HF gas and the NH 3 gas are supplied from the gas introduction member 12 b to the processing part 11 b , together with the Ar gas and the N 2 gas which are inert gases, respectively, while only the Ar gas and the N 2 gas which are inert gases are supplied from the gas introduction member 12 a to the processing part 11 a .
  • the gas introduction members 12 a and 12 b are provided to introduce the gases from the gas supply mechanism 14 into the chamber 10 and supply the gases to the processing parts 11 a and 11 b .
  • Each of the gas introduction members 12 a and 12 b has a gas diffusion space 64 defined therein and has a cylindrical shape.
  • Gas introduction holes 65 penetrating the upper wall of the chamber 10 are respectively formed in the upper surfaces of the gas introduction members 12 a and 12 b .
  • a large number of gas discharge holes 66 connected to each of the gas diffusion spaces 64 are respectively formed in the bottom surfaces of the gas introduction members 12 a and 12 b .
  • each of the gas introduction members 12 a and 12 b functions as a gas dispersion head (shower head) that dispersedly discharges a gas.
  • the gas introduction members 12 a and 12 b may be of a post-mix type in which the HF gas and the NH 3 gas are discharged into the chamber 10 through different flow paths.
  • the exhaust mechanism 15 includes an exhaust pipe 101 connected to an exhaust port (not shown) formed in the bottom portion 51 b of the chamber 10 . Further, the exhaust mechanism 15 includes an automatic pressure control valve (APC) 102 for controlling an internal pressure of the chamber 10 and a vacuum pump 103 for exhausting the interior of the chamber 10 , which are installed in the exhaust pipe 101 .
  • the exhaust port is formed outside the inner walls 71 a and 71 b .
  • a number of slits are formed in portions of the inner walls 71 a and 71 b below the substrate mounting tables 61 a and 61 b , respectively, so that the exhaust mechanism 15 can exhaust the interior of the chamber 10 from both the processing parts 11 a and 11 b .
  • the APC 102 and the vacuum pump 103 are shared by both the processing parts 11 a and 11 b.
  • a high-pressure capacitance manometer 105 a and a low-pressure capacitance manometer 105 b which are pressure gauges, are installed so as to be inserted into the exhaust spaces 68 from the bottom portion 51 b of the chamber 10 , respectively.
  • the opening degree of the automatic pressure control valve (APC) 102 is controlled based on a pressure detected by the capacitance manometer 105 a or 105 b.
  • the control part 16 includes a process controller 161 provided with a microprocessor (computer) for controlling various components of the COR processing apparatus 100 .
  • a user interface 162 is connected to the process controller 161 .
  • the user interface 162 includes a keyboard or a touch panel display for allowing an operator to input commands to manage the COR processing apparatus 100 , a display for visualizing and displaying the operation status of the COR processing apparatus 100 , and the like.
  • a storage part 163 is connected to the process controller 161 .
  • the storage part 163 stores a control program for realizing various processes executed in the COR processing apparatus 100 under the control of the process controller 161 , processing recipes which are control programs for causing the various components of the COR processing apparatus 100 to execute their respective prescribed processes according to processing conditions, various databases and the like.
  • the processing recipes are stored in an appropriate storage medium (not shown) in the storage part 163 . Then, as necessary, any of the processing recipes is called from the storage part 163 and is executed by the process controller 161 , so that a desired process is performed in the COR processing apparatus 100 under the control of the process controller 161 .
  • control part 16 has a significant feature in that the MFCs 150 a to 150 h and the opening/closing valves 151 a to 151 h of the gas supply mechanism 14 are independently controlled as described above.
  • FIGS. 3A and 3B are sectional views for explaining a substrate processing operation performed by the COR processing apparatus 100 according to an embodiment.
  • Two wafers Wa and Wb on each of which an etching target film (for example, SiO 2 film) has been formed are respectively loaded into the processing parts 11 a and 11 b inside the chamber 10 , and are respectively mounted on the substrate mounting tables 61 a and 61 b . Then, a pressure stabilizing step of stabilizing the internal pressure of the chamber 10 by adjusting the internal pressure to a predetermined pressure by means of the exhaust mechanism 15 is performed, and subsequently, a substrate process step is performed. Since the processing parts 11 a and 11 b share the exhaust mechanism 15 , the pressure adjustment during the pressure stabilizing step and the substrate process step is performed by the common automatic pressure control valve (APC) 102 .
  • APC automatic pressure control valve
  • the substrate process step is performed with a common substrate processing mode illustrated in FIG. 3A and an independent substrate processing mode illustrated in FIG. 3B .
  • the common substrate processing mode is a mode in which the wafers Wa and Wb are processed under the same gas conditions. With this common substrate processing mode, a COR process is performed in both the processing parts 11 a and 11 b .
  • the state of the opening/closing valves 151 a to 151 h corresponds to “Case a” described above.
  • the HF gas and the NH 3 gas respectively diluted with the Ar gas and the N 2 gas as inert gases are supplied from the gas introduction members 12 a and 12 b onto the wafers Wa and Wb, whereby the same substrate process is performed on both the wafers Wa and Wb.
  • the independent substrate processing mode is a mode in which the wafers Wa and Wb are processed under different gas conditions.
  • the state of the opening/closing valves 151 a to 151 h corresponds to, for example, “Case b” described above.
  • the HF gas and the NH 3 gas respectively diluted with the Ar gas and the N 2 gas are supplied from the gas introduction member 12 a onto the wafer Wa of the processing part 11 a , and only the Ar gas and the N 2 gas are supplied from the gas introduction member 12 b onto the wafer Wb of the processing part 11 b , whereby different substrate processes are performed on the wafers Wa and Wb.
  • the processing of the wafer Wa by the HF gas and the NH 3 gas is continued in the processing part 11 a , whereas the supply of the HF gas and the NH 3 gas onto the wafer Wb is stopped in the processing part 11 b .
  • the HF gas may be stopped and the NH 3 gas may be supplied to the processing part 11 b .
  • An inert gas supplied from the gas introduction member 12 b may be one of the Ar gas and the N 2 gas.
  • the processing of the wafer Wb by the HF gas and the NH 3 gas may be performed in the processing part 11 b , whereas the supply of the HF gas and the NH 3 gas onto the wafer Wa may be stopped in the processing part 11 a .
  • the state of the opening/closing valves 151 a to 151 h corresponds to, for example, “Case c” described above.
  • the supply of the HF gas to the processing part 11 a may be stopped, and the NH 3 gas may be supplied to the processing part 11 a .
  • An inert gas supplied from the gas introduction member 12 a may be one of the Ar gas and the N 2 gas.
  • the independent substrate processing mode is a mode in which processing is performed in one processing part and no processing is performed in the other processing part.
  • the independent substrate processing mode When the independent substrate processing mode is applied in such a manner that the COR process is performed in the processing part 11 b and no COR process is performed in the processing part 11 b , it may be considered to stop the supply of a gas from the gas introduction member 12 b to the processing part 11 b , as a reference example illustrated in FIG. 4 .
  • the exhaust mechanism 15 is shared by both the processing parts 11 a and 11 b and the pressure is controlled by the single APC, if the supply of a gas from the gas introduction member 12 b is stopped while continuing to supply the HF gas and the NH 3 gas from the gas introduction member 12 a , a pressure difference occurs between the processing part 11 a and the processing part 11 b .
  • the gas from the gas introduction member 12 a flows backward through slits formed in the lower portions of the inner walls 71 a and 71 b and flows into the processing portion 11 b .
  • the Ar gas and the N 2 gas are supplied from the gas introduction member 12 b , as illustrated in FIG. 3B .
  • the gas supply mechanism 14 controls the flow rates of the Ar gas and the N 2 gas from the gas introduction member 12 b so as to prevent a pressure difference from occurring between the processing part 11 a and the processing part 11 b.
  • control part 16 can control the gas supply mechanism so that the pressure of the processing part 11 a and the pressure of the processing part 11 b become equal to each other so as to prevent the pressure difference from occurring between the processing part 11 a and the processing part 11 b by closing the opening/closing valves 151 d and 151 h to stop the supply of the HF gas and the NH 3 gas to the gas introduction member 12 b and increasing the flow rates of the Ar gas and the N 2 gas by means of the MFCs 150 b and 150 f with the opening/closing valves 151 b and 151 f opened. That is to say, the Ar gas and the N 2 gas are used as supplement gases for pressure regulation. As described above, in the independent substrate processing mode, the NH 3 gas may be supplied to the processing part 11 b which performs no processing, but in that case, only the Ar gas may be used as the supplement gas.
  • the pressure regulation is performed by supplying an inert gas as a supplement gas for pressure regulation rather than simply stopping the supply of a processing gas.
  • a substrate process step (COR process) S 2 is performed in combination of the processing in the common substrate processing mode and the processing in the independent substrate processing mode, and then an exhausting step S 3 for exhausting a process space is performed.
  • the independent substrate processing mode-based process S 2 - 1 is initially performed and subsequently the common substrate processing mode-based process S 2 - 2 is performed.
  • etching may proceed due to a reaction product and a residual gas on the wafer when the processing is paused under high pressure conditions.
  • the independent substrate processing mode-based process S 2 - 1 is first performed and subsequently the common substrate processing mode-based process S 2 - 2 is performed.
  • the independent substrate processing mode-based process S 2 - 1 is first performed and subsequently the common substrate processing mode-based process S 2 - 2 is performed.
  • the HF gas and the NH 3 gas as processing gases are introduced while the Ar gas and the N 2 gas are being supplied, or the HF gas is introduced while the Ar gas, the N 2 gas and the NH 3 gas are being supplied.
  • an etching delay may occur when the flow rate of the Ar gas or the N 2 gas is large. In such a case, a processing time may be adjusted in anticipation of the etching delay in advance.
  • the substrate process step S 2 is ended by performing the independent substrate processing mode-based process S 2 - 2 followed by the common substrate processing mode-based process S 2 - 2 .
  • the independent substrate processing mode-based process S 2 - 1 and the common substrate processing mode-based process S 2 - 2 may be repeated while performing a purging process between the process S 2 - 1 and the process S 2 - 2 .
  • a specific gas flow control in this example will be described with reference to a timing chart of FIG. 6 .
  • the opening/closing valves 151 a , 151 b , 151 e , 151 f , 151 g and 151 h are opened so that the Ar gas, the N 2 gas and the NH 3 gas are supplied to the processing parts 11 a and 11 b at the predetermined same flow rates to adjust internal pressures of the processing parts 11 a and 11 b to a predetermined pressure, thereby stabilizing the internal pressures (in the pressure stabilizing step S 1 ).
  • the substrate process is started (in the substrate process step S 2 ).
  • the opening/closing valve 151 c is opened to supply the HF gas to the processing part 11 a to start the COR process in the processing part 11 a , and then the independent substrate processing mode-based process S 2 - 1 with no COR process is performed for a predetermined period of time without supplying the HF gas to the processing part 11 b .
  • the Ar gas of the processing part 11 b is increased in flow rate more than that of the processing part 11 a so that the processing part 11 b has the same internal pressure as the processing part 11 a .
  • the Ar gas of the increased flow rate serves as a supplement gas.
  • the increase in amount of the Ar gas may correspond to the amount of the HF gas supplied to the processing part 11 a.
  • the COR process is continued in the processing part 11 a while maintaining all the gases at the same flow rates, and the common substrate processing mode-based process S 2 - 2 with the COR process is performed in the processing part 11 b for a predetermined period of time by opening the opening/closing valve 151 d to supply the HF gas to the processing part 11 b .
  • the flow rate of the Ar gas supplied in the independent substrate processing mode-based process S 2 - 1 is decreased so that the processing part 11 b has the same internal pressure as the processing part 11 a .
  • the decrease in the amount of the Ar gas may correspond to the amount of the HF gas supplied to the processing part 11 b.
  • the HF gas is not introduced into the processing part 11 b in the independent substrate processing mode-based process S 2 - 1 , but the HF gas is introduced into the processing part 11 b in the common substrate processing mode-based process S 2 - 2 .
  • the HF gas and the NH 3 gas may not be introduced into the processing part 11 b in the independent substrate processing mode-based process S 2 - 1 , but the HF gas and the NH 3 gas may be introduced into the processing part 11 b when switching to the common substrate processing mode-based process S 2 - 2 .
  • the supplement gases to be supplied to the processing part 11 b may be the Ar gas and the N 2 gas.
  • etching was performed by the processing apparatus of FIG. 1 .
  • a processing recipe for cyclically etching a CVD-SiO 2 film in 6 sec ⁇ 8 cycle was used to evaluate an etching result for a case (process A) where the etching was performed in the order of the common substrate processing mode ⁇ the independent substrate processing mode in each cycle and a case (process B) where the etching was performed in the order of the independent substrate processing mode ⁇ the common substrate processing mode in each cycle.
  • the Ar gas, the HF gas, the N 2 gas and the NH 3 gas were supplied to both the processing parts 11 a and 11 b to perform the COR process in the common substrate processing mode, and the COR process was performed in only the processing part 11 a in the independent substrate processing mode without supplying the HF gas to the processing part 11 b . That is to say, in the process A, the COR process was initially performed and subsequently the process was stopped in the processing part 11 b in each cycle, whereas, in the processing B, the COR process was performed after initially stopping the process for a predetermined period of time in the processing part 11 b in each cycle.
  • the etching amount was +36.6% for the target, whereas, in the processing B, the etching amount was ⁇ 10.4% for the target. From this fact, it was confirmed that the controllability of the etching amount is improved by initially performing the independent substrate processing mode-based process and then performing the common substrate processing mode-based process.
  • a processing recipe for cyclically etching a thermal oxide film in 15 sec ⁇ 5 cycle was used to evaluate an etching result for a case (process C) where the etching was performed in the order of the common substrate processing mode ⁇ the independent substrate processing mode in each cycle and a case (process D) where the etching was performed in the order of the independent substrate processing mode ⁇ the common substrate processing mode in each cycle.
  • the etching amount was +12.7% for the target, whereas, in the process D, the etching amount was ⁇ 5.0% for the target.
  • the controllability of the etching amount is improved by initially performing the independent substrate processing mode-based process and then performing the common substrate processing mode-based process.
  • the Ar gas and the N 2 gas are increased to function as supplement gases in the processing part to which the processing gases (the HF gas and the NH 3 gas) are not supplied, so that a pressure difference is prevented from occurring between the processing part 11 a and the processing part 11 b . This prevents the inflow of the gases between the processing parts 11 a and 11 b .
  • the processing parts 11 a and 11 b are interconnected via the slits formed in the portions of the inner walls 71 a and 71 b below the substrate mounting tables 61 a and 61 b , it is difficult to completely prevent a backward flow of the processing gases (the HF gas and the NH 3 gas) from one processing part to the other processing part and completely prevent a backward flow of the supplement gases (the Ar gas and the N 2 gas) from the other processing part to one processing part. Thus, a backward flow of tiny amounts of gases (gas backward diffusion) occurs.
  • the processing gases the HF gas and the NH 3 gas
  • the supplement gases the Ar gas and the N 2 gas
  • the flow rates of the processing gases (the HF gas and the NH 3 gas) and the supplement gases (the Ar gas and the N 2 gas) are increased in order to avoid such a problem, the etching rate increases and it is therefore necessary to adjust the etching amount with the processing time and the gas flow rate, which may result in a narrow process margin.
  • a pressure regulating gas is flowed at a sufficient flow rate to prevent the processing gases and the supplement gases from backwardly diffusing between the processing parts 11 a and 11 b in the independent substrate processing mode-based process S 2 - 2 of the subsequent substrate process step S 2 , and to form a flow of gas flowing from the gas introducing members 12 a and 12 b to the exhaust mechanism 15 .
  • the Ar gas, the N 2 gas and the NH 3 gas are supplied as the pressure regulating gases to both the processing parts 11 a and 11 b during the pressure stabilizing step S 1 .
  • the flow rates of the Ar gas, the N 2 gas and the NH 3 gas are set to be larger than those in the substrate process step S 2 .
  • the total flow rate of the pressure regulating gases may be three times or more as large as that in the substrate process step S 2 .
  • the pressure regulating gas a portion of the gases supplied during the substrate process step S 2 , which does not cause substrate process, may be used.
  • the Ar gas, the N 2 gas and the NH 3 gas may be used in the processing part 11 a
  • the Ar gas and the N 2 gas may be used in the processing part 11 b.
  • the flow rates of the Ar gas, the N 2 gas and the NH 3 gas are decreased until reaching a normal state, and the HF gas is supplied at a predetermined flow rate to perform the COR process in the processing part 11 a , whereas the flow rates of the N 2 gas and the NH 3 gas in the processing part 11 b are set to be equal to those in the processing part 11 a .
  • the supply amount of the Ar gas is adjusted so as to include a supplement gas corresponding to the HF gas supplied to the processing part 11 a .
  • the HF gas is also supplied to the processing part 11 b , the flow rate of the Ar gas supplied as a supplement gas is reduced by the supply amount of the HF gas.
  • the COR process is performed in the processing parts 11 a and 11 b under the same processing conditions. Thereafter, the supply of the gases is stopped and the exhausting step S 3 is performed to exhaust the process spaces S by the exhaust mechanism 15 .
  • the independent substrate processing mode-based process S 2 - 2 it is possible to prevent the backward flow of the processing gases and the supplement gases more effectively than that in a case of only adjusting the pressure with the supplement gases. More specifically, even in the low flow rate region, it is possible to extremely effectively prevent the processing gases (the HF gas and the NH 3 gas) from flowing backward from the processing part 11 a to the processing part 11 b intended to stop the process, and also prevent the supplement gases (the Ar gas and the N 2 gas) from flowing backward from the processing part 11 b to the processing part 11 a intended to continue the process. It is therefore possible to perform the substrate process so that the etching amount is close to the etching amount set in both the processing parts 11 a and 11 b.
  • the HF gas is not introduced into the processing part 11 b in the independent substrate processing mode-based process S 2 - 1
  • the HF gas is introduced into the processing part 11 b in the common substrate processing mode-based process S 2 - 2
  • the HF gas and the NH 3 gas may not be introduced into the processing part 11 b in the independent substrate processing mode-based process S 2 - 1
  • the HF gas and the NH 3 gas may be introduced into the processing part 11 b when switching to the common substrate processing mode-based process S 2 - 2 .
  • the supplement gases supplied to the processing part 11 b may be the Ar gas and the N 2 gas.
  • the COR process was initially performed in the processing part 11 a in the substrate process step.
  • the HF gas was not supplied to the processing part 11 b , and the independent substrate processing mode-based process was performed to supplement an Ar gas as a supplement gas at a flow rate corresponding to the amount of the not-supplied HF gas. Therefore, the COR process was performed in both the processing parts in the common substrate processing mode.
  • FIG. 8 is a view illustrating the total gas flow rate during the substrate process step and an etching amount deviation (a difference between the actual etching amount and the set etching amount) in the COR process in the processing part 11 a .
  • a black circle indicates an etching amount deviation when the flow rates of the pressure regulating gases (the Ar gas, the N 2 gas and the NH 3 gas) in the pressure stabilizing step are set to be equal to those in the substrate process step.
  • the etching amount deviation tends to be large in a region where the total flow rate is low.
  • the etching amount deviation is as large as about ⁇ 0.33 nm at the total flow rate of 300 sccm.
  • a black square indicates an etching amount deviation available when the flow rates of the pressure regulating gases are tripled.
  • the etching amount deviation is about ⁇ 0.03 nm, which is very close to the set value. The effect of increasing the flow rates of the pressure regulating gases was confirmed from this fact.
  • ammonium fluorosilicate (NH 4 ) 2 SiF 6 : AFS) is generated as a reaction product.
  • the wafer processed in the COR processing apparatus 100 is heat-treated in a heat treating apparatus to decompose and remove the AFS.
  • the process is initially performed in only one of the processing part 11 a and the processing part 11 b in the independent substrate processing mode, and subsequently, the COR process is performed in the processing parts in the common substrate processing mode under the same conditions. This improves the controllability of the etching amount.
  • the COR process may be performed with only the HF gas or the NH 3 gas by the substrate processing device of FIG. 1 .
  • the opening/closing valves may be controlled as shown in the following Case d.
  • the independent substrate processing mode-based process may be performed using the HF gas only in the processing part 11 a .
  • the opening/closing valves 151 e , 151 f , 151 g and 151 h may be opened to supply the HF gas and the Ar gas to perform the common substrate processing mode-based process.
  • the substrate processing device is not limited to the COR processing apparatus 100 of FIG. 1 as long as it is schematically configured as illustrated in FIG. 9 such that the processing parts 11 a and 11 b are installed in a single common chamber 10 and the exhaust mechanism 15 is shared by the processing parts 11 a and 11 b installed inside the single common chamber 10 .
  • the present disclosure is limited to the configuration of FIG. 9 where the processing parts 11 a and 11 b are installed inside the single common chamber 10 .
  • the processing parts 11 a and 11 b may be respectively installed inside separate chambers 10 a and 10 b
  • the exhaust mechanism 15 may be shared by the separate chambers 10 a and 10 b.
  • the Ar gas or the N 2 gas which is a dilution gas for diluting the processing gas such as the HF gas or the NH 3 gas
  • the supplement gas may be another inert gas.
  • the supplement gas for pressure regulation is not limited to the inert gas but may be a non-reactive gas which is not reactive with etching target films of processed wafers Wa and Wb. Further, a reactive gas may be used as long as it can regulate the pressure without affecting the process.
  • the dilution gas is used as a supplement gas for pressure regulation together with the processing gas during the substrate process.
  • a dedicated supplement gas may be used separately from the dilution gas used together with the processing gas.
  • a dedicated supplement gas supply source, a dedicated supplement gas supply pipe and dedicated MFCs and dedicated opening/closing valves may be additionally installed in the gas supply mechanism 14 .
  • a semiconductor wafer has been described as an example of a target substrate.
  • the target substrate is not limited to the semiconductor wafer in the principle of the present disclosure and it is to be understood that it can be applied to different various substrate processes.
  • the apparatus provided with the two processing parts 11 a and 11 b as a plurality of processing parts has been described as an example, but the number of processing parts is not limited to two.
  • the substrate processing device of the present disclosure has been described to be applied as the COR processing apparatus, but the substrate processing device is not limited to the COR processing apparatus.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
US16/092,683 2016-04-15 2017-03-03 Substrate processing method and substrate processing device Abandoned US20190153599A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016-081682 2016-04-15
JP2016081682A JP6667354B2 (ja) 2016-04-15 2016-04-15 基板処理方法および基板処理装置
PCT/JP2017/008590 WO2017179333A1 (ja) 2016-04-15 2017-03-03 基板処理方法および基板処理装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/008590 A-371-Of-International WO2017179333A1 (ja) 2016-04-15 2017-03-03 基板処理方法および基板処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US17/701,341 Division US20220213596A1 (en) 2016-04-15 2022-03-22 Substrate processing method and substrate processing device

Publications (1)

Publication Number Publication Date
US20190153599A1 true US20190153599A1 (en) 2019-05-23

Family

ID=60042590

Family Applications (2)

Application Number Title Priority Date Filing Date
US16/092,683 Abandoned US20190153599A1 (en) 2016-04-15 2017-03-03 Substrate processing method and substrate processing device
US17/701,341 Pending US20220213596A1 (en) 2016-04-15 2022-03-22 Substrate processing method and substrate processing device

Family Applications After (1)

Application Number Title Priority Date Filing Date
US17/701,341 Pending US20220213596A1 (en) 2016-04-15 2022-03-22 Substrate processing method and substrate processing device

Country Status (6)

Country Link
US (2) US20190153599A1 (ja)
JP (1) JP6667354B2 (ja)
KR (1) KR102161369B1 (ja)
CN (1) CN109075061B (ja)
TW (1) TWI708861B (ja)
WO (1) WO2017179333A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102343637B1 (ko) 2019-06-13 2021-12-28 세메스 주식회사 기판 처리 장치 및 방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450414A (en) * 1987-08-21 1989-02-27 Hitachi Ltd Vacuum treatment apparatus
JPH02116119A (ja) * 1988-10-26 1990-04-27 Furukawa Electric Co Ltd:The 気相成長装置
JPH0786188A (ja) * 1993-09-17 1995-03-31 Tokyo Electron Ltd 搬送室及びそのクリーニング方法
KR100300096B1 (ko) * 1994-06-07 2001-11-30 히가시 데쓰로 처리장치,처리가스의공급방법및처리장치의크리닝방법
JP3270852B2 (ja) * 1995-04-20 2002-04-02 東京エレクトロン株式会社 圧力調整装置及びこれを用いた部屋の連通方法
JP2004131760A (ja) * 2002-10-08 2004-04-30 Canon Inc 真空処理装置
JP2004153104A (ja) * 2002-10-31 2004-05-27 Canon Inc 真空処理方法
US7877161B2 (en) * 2003-03-17 2011-01-25 Tokyo Electron Limited Method and system for performing a chemical oxide removal process
JP5113705B2 (ja) * 2007-10-16 2013-01-09 東京エレクトロン株式会社 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム
JP5768713B2 (ja) * 2008-07-23 2015-08-26 ニュー パワー プラズマ カンパニー，リミティッド 多重基板処理チャンバー及びこれを含む基板処理システム
JP5195676B2 (ja) 2008-08-29 2013-05-08 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及び記憶媒体
US8617347B2 (en) * 2009-08-06 2013-12-31 Applied Materials, Inc. Vacuum processing chambers incorporating a moveable flow equalizer
JP6139986B2 (ja) * 2013-05-31 2017-05-31 東京エレクトロン株式会社 エッチング方法
JP6258656B2 (ja) * 2013-10-17 2018-01-10 東京エレクトロン株式会社 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
CN109075061A (zh) 2018-12-21
TWI708861B (zh) 2020-11-01
TW201804014A (zh) 2018-02-01
JP6667354B2 (ja) 2020-03-18
US20220213596A1 (en) 2022-07-07
WO2017179333A1 (ja) 2017-10-19
KR20180122389A (ko) 2018-11-12
JP2017191897A (ja) 2017-10-19
CN109075061B (zh) 2023-05-05
KR102161369B1 (ko) 2020-09-29

Similar Documents

Publication Publication Date Title
US10460949B2 (en) Substrate processing apparatus, substrate processing method and storage medium
KR101934237B1 (ko) 기판 처리 장치, 기판 처리 방법 및 기억 매체
US9607855B2 (en) Etching method and storage medium
US9490151B2 (en) Substrate processing apparatus and substrate processing method
US9012331B2 (en) Etching method and non-transitory storage medium
TWI727023B (zh) 基板處理方法及基板處理裝置
US20200098575A1 (en) Etching Method, Etching Apparatus, and Storage Medium
US20150111388A1 (en) Substrate processing method and substrate processing apparatus
US9418866B2 (en) Gas treatment method
US8828880B2 (en) Method and apparatus for manufacturing semiconductor device
US20220213596A1 (en) Substrate processing method and substrate processing device
JP2016164964A5 (ja)
US20230395400A1 (en) Etching method and etching apparatus
US20220020601A1 (en) Etching method and etching apparatus
US10622205B2 (en) Substrate processing method and substrate processing apparatus
US20220238311A1 (en) Substrate processing method and substrate processing apparatus
US10504743B2 (en) Method of etching film
US20180096866A1 (en) Substrate processing apparatus

Legal Events

Date Code Title Description
AS Assignment

Owner name: TOKYO ELECTRON LIMITED, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TODA, SATOSHI;TAKAHASHI, TETSURO;REEL/FRAME:047133/0896

Effective date: 20180903

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: FINAL REJECTION MAILED

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION