US20170323906A1 - Display device - Google Patents

Display device Download PDF

Info

Publication number
US20170323906A1
US20170323906A1 US15/479,392 US201715479392A US2017323906A1 US 20170323906 A1 US20170323906 A1 US 20170323906A1 US 201715479392 A US201715479392 A US 201715479392A US 2017323906 A1 US2017323906 A1 US 2017323906A1
Authority
US
United States
Prior art keywords
tft
display device
ltps
taos
tfts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US15/479,392
Other languages
English (en)
Inventor
Yohei Yamaguchi
Isao Suzumura
Hidekazu Miyake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
Original Assignee
Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Assigned to JAPAN DISPLAY INC. reassignment JAPAN DISPLAY INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MIYAKE, HIDEKAZU, SUZUMURA, ISAO, YAMAGUCHI, YOHEI
Publication of US20170323906A1 publication Critical patent/US20170323906A1/en
Priority to US16/004,546 priority Critical patent/US10361229B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1229—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different crystal properties within a device or between different devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1233—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different thicknesses of the active layer in different devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/3262—
    • H01L27/3276—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

Definitions

  • the present invention relates to display devices and particularly to a display device with a hybrid structure in which polysilicon (poly-Si) TFTs and oxide semiconductor TFTs are used.
  • a typical liquid crystal display device includes a TFT substrate, a counter substrate facing the TFT substrate, and a liquid crystal layer placed therebetween.
  • TFT substrate pixels each having a pixel electrode, a thin film transistor (TFT), and the like are formed in the form of a matrix. Images are produced by controlling the transmittance rate of light passing through the liquid crystal molecules on a pixel-by-pixel basis.
  • Low-temperature poly-Si is suitable for the TFTs of a driver circuit because it has a high carrier mobility rate.
  • oxide semiconductors are high in off resistance, and the use of such semiconductors in TFTs reduces off current.
  • Patent Application No. WO2015/194417 discloses a structure for forming LTPS TFTs and oxide semiconductor TFTs on the same substrate. As disclosed therein, doped LTPS is used as the gates of the oxide semiconductors.
  • the switching TFTs of pixels need to be low in current leakage. Leakage current can be reduced by transparent amorphous oxide semiconductor TFTs.
  • a transparent amorphous oxide semiconductor is hereinafter abbreviated as TAOS.
  • TAOS' s include indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), zinc oxide nitride (ZnON), indium zinc oxide(IZO), indium gallium oxide(IGO), and zinc oxide(ZnO).
  • IGZO indium gallium zinc oxide
  • ITZO indium tin zinc oxide
  • ZnON zinc oxide nitride
  • IZO indium zinc oxide
  • IGO indium gallium oxide
  • ZnO zinc oxide
  • LTPS TFTs made of LTPS have a high carrier mobility rate. Therefore, such LTPS TFTs can be used in the driver circuit.
  • the term “LTPS” is used to refer also to a TFT made of LTPS.
  • the typical practice is to connect two LTPS TFTs in series because LTPS is high in current leakage.
  • TAOS's should be used as the switching elements of the pixels in the display area, and LTPS as the TFTs of the peripheral driver circuit.
  • LTPS hydrogen fluoride
  • TAOS's will dissolve in HF, the same fabrication process cannot be used for the LTPS and TAOS's.
  • the present invention is designed to solve the above problems, and an object of the invention is to make it possible to form LTPS TFTs and TAOS TFTs on the same substrate.
  • a display device including a substrate having a display area in which pixels are formed.
  • the pixels include a first TFT made of an oxide semiconductor.
  • the drain of the first TFT is formed of first polysilicon.
  • the source of the first TFT is formed of second polysilicon.
  • the first polysilicon is connected to a first electrode via a first through-hole formed in an insulating film covering the first TFT.
  • the second polysilicon is connected to a second electrode via a second through-hole formed in the insulating film covering the first TFT.
  • the substrate further includes a driver circuit outside the display area, the driver circuit having second TFTs made of polysilicon.
  • FIG. 1 is a plan view of a liquid crystal display device
  • FIG. 2 is a cross section taken along line A-A of FIG. 1 ;
  • FIG. 3 is a cross section illustrating a TFT structure according to the invention.
  • FIG. 4 is a cross section illustrating the formation of an undercoat and a-Si on a substrate
  • FIG. 5 is a cross section illustrating the conversion of the a-Si into poly-Si by a laser beam
  • FIG. 6 is a cross section illustrating the poly-Si layer after patterning
  • FIG. 7 is a cross section illustrating ion implantation of phosphorous (P) being performed
  • FIG. 8 is a cross section illustrating the formation of a TAOS
  • FIG. 9 is a cross section illustrating the formation of a gate insulating film and gate electrodes on the insulating film
  • FIG. 10 is a cross section illustrating ion implantation of P being performed
  • FIG. 11 is a cross section illustrating ion implantation of boron (B) being performed
  • FIG. 12 is a cross section illustrating the formation of an inter-layer insulating film
  • FIG. 13 is a plan view of TFTs according to the invention.
  • FIG. 14 is a cross section of TFTs according to an embodiment 2 of the invention.
  • FIG. 15 is a cross section illustrating ion implantation of B being performed
  • FIG. 16 is a cross section illustrating the formation of an inter-layer insulating film
  • FIG. 17 is a cross section of a liquid crystal display device
  • FIG. 18 is a cross section of a liquid crystal display device according to another embodiment of the invention.
  • FIG. 19 is a plan view of an organic electroluminescent (EL) display device
  • FIG. 20 is a cross section taken along line B-B of FIG. 19 ;
  • FIG. 21 is a cross section of an organic EL display device.
  • FIG. 1 is a plan view of a liquid crystal display device to which the invention is applied.
  • FIG. 2 is a cross section taken along line A-A of FIG. 1 .
  • a TFT substrate 100 and a counter substrate 200 are disposed to face each other, and a liquid crystal layer is placed therebetween.
  • a lower polarizer 130 is glued to the bottom surface of the TFT substrate 100
  • an upper polarizer 230 is glued to the top surface of the counter substrate 200 .
  • the structure made up of the TFT substrate 100 , the counter substrate 200 , the lower polarizer 130 , and the upper polarizer 230 is referred to as a liquid crystal display panel 500 .
  • the TFT substrate 100 is formed larger than the counter substrate 200 , and the section of the TFT substrate 100 that sticks out serves as a terminal section 150 .
  • a flexible wiring substrate 160 is connected to the terminal section 150 to externally supply signals and electric power to the liquid crystal display device. Since the liquid crystal display panel 500 does not emit light by itself, a backlight 400 is disposed on its rear side.
  • the liquid crystal display device can be divided into a display area 10 and a peripheral area 20 .
  • a great number of pixels are arranged in the form of a matrix, each of which includes a switching TFT.
  • a driver circuit is disposed so as to drive gate lines and video signal lines.
  • a TAOS should be used as the TFT of each pixel since it need to be low in leakage
  • LTPS should be used as the TFTs of the peripheral driver circuit since they need to have a high carrier mobility rate.
  • LTPS forming process if the LTPS is to be connected to drain and source electrodes, it is necessary to form through-holes in an insulating film covering the LTPS and perform HF cleaning for the purpose of removing the remaining oxides from the surfaces of the LTPS in the through-holes.
  • FIG. 3 illustrates a TFT structure according to the invention that is deigned to solve the problem.
  • FIGS. 4 through 12 illustrate the process for producing the structure of FIG. 3 .
  • LTPS TFTs and a TAOS TFT are formed on the same substrate 100 .
  • the LTPS TFTs are used for the peripheral driver circuit and include a p-MOS and an n-MOS.
  • the TAOS TFT is used as the switching TFT of a pixel in the display area.
  • a distinctive feature of the invention lies in the structure of the TAOS TFT.
  • the TAOS TFT In order to connect the TAOS TFT to the pixel electrode or a video signal line, it is necessary to create through-holes 108 in an inter-layer insulating film 105 formed above the TFT.
  • the TAOS TFT is formed of a TAOS 110
  • the material connected in a through-hole 108 to the pixel electrode or a video signal line is not the TAOS 110 but LTPS 112 or LTPS 113 . This prevents contact between the TAOS and HF during HF cleaning of the through-holes. Therefore, the TAOS TFT will not be destroyed by the HF.
  • an undercoat 101 is formed of SiNx (or SiN) and SiOx (or SiO 2 ) on the TFT substrate 100 made of glass.
  • the purpose of the undercoat 101 is to prevent impurities in the glass substrate from contaminating the semiconductor layer constituting TFTs.
  • the SiNx is, for example, 50-nm thick while the SiOx is 300-nm thick.
  • Formed on the undercoat 101 is a-Si (amorphous (non-crystalline) silicon) 115 .
  • the SiNx, SiOx, and a-Si are formed successively by CVD.
  • the a-Si is approximately 50 nm in thickness.
  • the a-Si 115 is converted into LTPS 102 by irradiating it with an excimer laser beam.
  • LTPS islands are formed by photolithography.
  • the TFTs to be formed include the following three TFTs: a p-MOS TFT made of LTPS (p-MOS LTPS); an n-MOS TFT made of LTPS (n-MOS LTPS); and an n-MOS TFT made of a TAOS (n-MOS TAOS).
  • p-MOS LTPS p-MOS LTPS
  • n-MOS LTPS n-MOS LTPS
  • n-MOS TAOS n-MOS TFT made of a TAOS
  • a photoresist 50 is formed over the entire p-MOS LTPS and the channel section 1021 of the n-MOS LTPS.
  • the LTPS 102 is then doped with P by ion implantation, thereby converting the region of the LTPS 102 that is not covered by the photoresist 50 into n+. This results in formation of the drains and sources of the n-MOS LTPS and n-MOS TAOS.
  • a TAOS 110 is formed at the n-MOS TAOS TFT section.
  • the TAOS 110 is formed across the range of, for example, 10 to 100 nm.
  • Examples of the material of the TAOS 110 include IGZO, ITZO, ZnON, IZO, IGO, and ZnO.
  • a gate insulating film 103 is then formed as illustrate in FIG. 9 .
  • the gate insulating film 103 is formed of SiOx (SiO 2 ) by CVD in which tetraethoxysilane (TEOS) is used. Formed on the gate insulating film 103 are gate electrodes 104 .
  • phosphorous-doping is performed through ion implantation in which the gate electrodes 104 are used as masks. This results in formation of an n-drain and source for the p-MOS LTPS.
  • the drain and source of the n-MOS LTPS are converted into n+.
  • the regions of the LTPS 102 that had been covered by the photoresist 50 but are not covered by the gate electrode 104 become n ⁇ . These regions are formed on the two opposite sides of the channel 1021 and are referred to as lightly doped drain regions 1022 (or simply LDD 1022 ).
  • the LDD layer 1022 decreases the intensity of an electric filed between the channel and source or between the channel and the drain, thereby preventing dialectic breakdown at those regions.
  • the regions of the TAOS that are not covered by the gate electrode 104 are converted into n-TAOS by the P-doping and made electrically conductive.
  • a photoresist 50 is formed to cover the n-MOS LTPS and n-MOS TAOS.
  • the p-MOS LTPS is then doped with B by ion implantation in which the gate electrode 104 is used as a mask. This converts the drain and source of the p-MOS LTPS into p+, making them sufficiently conductive.
  • the photoresist 50 is then removed, followed by the formation of the inter-layer insulating film 105 as illustrated in FIG. 12 .
  • the inter-layer insulating film 105 covers all the TFTs and is formed of SiNx by CVD.
  • drain electrodes 106 and source electrodes 107 are formed in the through-holes 107 .
  • the drain electrodes 106 are connected to, for example, video signal lines while the source electrode 107 are connected to pixel electrodes.
  • Each of the drain electrodes 106 and source electrodes 107 is formed of, for example, a Ti/Al alloy/Ti layer (i.e., three-layered structure). Ti is used to prevent formation of hillocks from the Al alloy. Ti can be replaced by Mo or W alloy.
  • HF cleaning is performed to remove the remaining oxide film from the surface of the LTPS.
  • LTPS 112 and LTPS 113 are formed as the drain and source of the TAOS TFT, and through-holes are formed above the LTPS 112 and LTPS 113 . Therefore, the drain and source of the TAOS TFT do not dissolve in HF.
  • the invention allows simultaneous formation of the LTPS TFTs and the TAOS TFT on the same substrate. This means that the TFT suitable for the pixel region and the TFTs suitable for the driver circuit can be formed simultaneously.
  • FIG. 13 is a plan view of the TFTs of FIG. 3 .
  • the TFTs shown in FIG. 13 are, from left to right, the p-MOS LTPS, n-MOS LTPS, and n-MOS TAOS.
  • LTPS is formed where through-holes 108 are created; therefore, these through-holes 108 can be created with the same process as for the p-MOS LTPS and n-MOS LTPS.
  • FIG. 14 is a cross section according to Embodiment 2 of the invention.
  • the drain electrode 112 of the n-MOS TAOS of FIG. 14 has a structure different from that of FIG. 3 .
  • the LTPS 112 constituting the drain of the n-MOS TAOS is p+while the TAOS 110 is n ⁇ .
  • a p-n junction diode is formed between the TAOS and the LTPS constituting the drain.
  • This diode prevents current leakage.
  • the sources and drains of the TFTs periodically switch their functions. Therefore, leakage can be prevented when a data signal is either + or ⁇ . In other words, the p-n junction can reduce leakage current to half.
  • FIGS. 15 and 16 illustrate an example of the process for forming the structure of FIG. 14 .
  • Embodiment 2 includes the same steps as those illustrated in FIGS. 4 through 10 related to Embodiment 1. That is, Embodiment 2 includes the steps of forming the undercoat 101 and the a-Si 115 on the glass substrate 100 ( FIG. 4 ), converting the a-Si 115 into poly-Si by laser annealing, forming the TAOS, forming the gate electrodes 104 on the gate insulating film 103 , and performing P-doping through ion implantation.
  • FIG. 15 a photoresist 50 is formed to cover the n-MOS LTPS and n-MOS TAOS, and the drain and source of the p-MOS LTPS is then doped with B by ion implantation.
  • FIG. 15 differs from FIG. 11 related to Embodiment 1 in that, in the former, the photoresist 50 does not cover the LTPS 112 constituting the drain of the n-MOS TAOS, and in that the LTPS drain 112 is converted into p+through ion implantation. As a result, a p-n junction is formed between the LTPS drain 112 and the TAOS 110 .
  • the inter-layer insulating film 105 is formed in such a way as to cover each TFT. Similar to Embodiment 1, the through-holes 108 are then formed in the inter-layer insulating film 105 , followed by HF cleaning of the through-holes 108 and by the formation of the drain electrodes 106 and the source electrodes 107 . In Embodiment 2 as well, LTPS is formed at the regions of the n-MOS TAOS where through-holes 108 are created. Therefore, the TAOS 110 does not dissolve at those through-holes 108 .
  • Embodiment 2 allows formation of a reliable, low-leakage TAOS TFT.
  • FIG. 17 is a cross section illustrating a case where the n-MOS TFTs of Embodiments 1 and 2, made of a TAOS, are applied to the display area.
  • a TFT array layer 120 is formed on the TFT substrate 100 .
  • the TFT array layer 120 has the layer structure of the TAOS TFT illustrated in FIGS. 3 and 14 , and an organic passivation film is formed on the TFT array layer 120 .
  • the liquid crystal display device of FIG. 17 is of the in-plane switching (IPS) type, and a planar common electrode 121 is formed on the TFT array layer 120 .
  • a capacitor insulating film 122 is formed to cover the common electrode 121 , and a pixel electrode 123 is formed on the capacitor insulating film 122 .
  • the pixel electrode 123 is in the form of a comb or strips and covered by an alignment film which is formed to initially align liquid crystal molecules 301 .
  • the counter substrate 200 is located across from the glass substrate 100 with the liquid crystal layer 300 inserted therebetween. Underneath the counter substrate 200 are a color filter 201 and a black matrix 202 . An overcoat 203 is formed to cover the color filter 201 and the black matrix 202 . Another alignment film 124 is formed to cover the overcoat 203 to initially align the liquid crystal molecules 301 .
  • FIG. 18 illustrates another example of the TFT array layer 120 of FIG. 17 .
  • an LTPS TFT and TAOS TFT are connected in series as the switching TFT of a pixel.
  • the left one is the LTPS TFT while the right one is the TAOS TFT.
  • an organic passivation film 109 is formed to cover the TFTs.
  • the planar common electrode 121 is formed on the organic passivation film 109 , and the capacitor insulating film 122 is formed to cover the common electrode 121 .
  • Formed on the capacitor insulating film 122 is the pixel electrode 123 , which is in the form of a comb or strips.
  • the pixel electrode 123 is connected to the source electrode 107 that extends from the TAOS TFT, via a through-hole 140 formed in the organic passivation film 109 and the capacitor insulating film 122 .
  • the same fabrication process can be used for the LTPS TFT and TAOS TFT.
  • LTPS TFTs and TAOS TFTs can be combined in various ways, depending on the purpose.
  • a liquid crystal display device when a data signal is written on a pixel electrode 123 , voltage is maintained for the duration of a frame by the storage capacitor created by the pixel electrode 123 , common electrode 121 , and capacitor insulating film 122 . If the leakage current from its TFT is large, the voltage of the pixel electrode 123 changes, which causes flickering and makes it impossible for the liquid crystal display device to produce high quality images.
  • the use of the TAOS TFT of the invention makes it possible to create a low-leakage liquid crystal display device that produces high quality images.
  • FIG. 19 is a plan view of an organic EL display device 2 . As illustrated in FIG. 19 , the display area 10 and the peripheral circuit area 20 are formed. Formed in the display area 10 are organic EL driver TFTs and switching TFTs. For the switching TFTs, low-leakage TAOS TFTs are suitable. The peripheral driver circuit is formed of TFTs, and LTPS TFTs are primarily used.
  • an anti-reflective polarizer 220 is glued to the display area 10 so as to cover it. Because reflective electrodes are used in the organic EL display device, the polarizer 220 is provided for the purpose of preventing reflection of external light.
  • the section of the TFT substrate 100 on which the display area 10 is not present serves as the terminal section 150 .
  • the flexible wiring substrate 160 is connected to the terminal section 150 to supply electric power and signals to the organic EL display device.
  • FIG. 20 is a cross section taken along line B-B of FIG. 19 .
  • a display element layer 210 including an organic EL layer is formed on the TFT substrate 100 .
  • the display element layer 210 corresponds to the display area 10 in FIG. 19 in terms of size.
  • a protective layer 215 made of SiNx or the like, is formed on the display element layer 210 for the purpose of preventing entry of moisture from the outside.
  • the above polarizer 220 is glued to the protective layer 215 .
  • the section of the TFT substrate 100 above which the display element layer 210 is not present serves as the terminal section 150 , to which the flexible wiring substrate 160 is connected.
  • FIG. 21 is a cross section of the display area of the organic EL display device. As illustrated in FIG. 21 , the TFT array layer 120 is formed on the TFT substrate 100 .
  • the TFT array layer 120 has the layer structure of the TAOS TFT illustrated in FIGS. 3 and 14 , and the organic passivation film 109 is formed on the TFT array layer 120 .
  • a reflective electrode 211 is formed over the TFT array layer 120 , and a lower electrode 212 , made of indium tin oxide (ITO) or the like, is formed on the reflective electrode 211 .
  • an organic EL layer 213 is formed on the lower electrode 212 , which includes, for example, an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer.
  • an upper electrode 214 which acts as a cathode.
  • the upper electrode 214 can be formed of a transparent conductive film such as IZO and ITO or of a metal thin film such as a silver film.
  • the protective layer 215 made of SiNx or the like, is formed on the upper electrode 214 , and the anti-reflective polarizer 220 is glued to the protective layer 215 by an adhesive 216 .
  • TFTs are formed in the TFT array layer 120 such as driver TFTs and switching TFTs. Since the invention allows formation of LTPS TFTs and TAOS TFTs through the same process, those TFTs can be combined in various ways. This makes it possible to create an organic EL display device that is capable of creating high quality images and reducing power consumption.
  • the LTPS TFTs of Embodiments 1 and 2 of the invention are the combination of an n-MOS TFT and a p-MOS TFT, the invention is not limited thereto. Instead, both can be n-MOS TFTs or p-MOS TFTs, depending on the product requirements or fabrication process requirements.
  • TAOS TFTs are used for the display area and that LTPS TFTs are used for the peripheral driver circuit
  • TAOS TFTs can be added to the peripheral circuit or LTPS TFTs can be added to the display area, depending on the product requirements.
  • the TAOS TFT of Embodiments 1 and 2 of the invention is an n-MOS TFT
  • the invention is not limited to such a case.
  • the TAOS TFT can instead be a p-MOS TFT.
  • LTPS for the drain and source of the TAOS TFT
  • the same fabrication process as for LTPS TFTs can be used.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
US15/479,392 2016-05-06 2017-04-05 Display device Abandoned US20170323906A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/004,546 US10361229B2 (en) 2016-05-06 2018-06-11 Display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016093071A JP6668160B2 (ja) 2016-05-06 2016-05-06 表示装置の製造方法
JP2016-093071 2016-05-06

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US16/004,546 Continuation US10361229B2 (en) 2016-05-06 2018-06-11 Display device

Publications (1)

Publication Number Publication Date
US20170323906A1 true US20170323906A1 (en) 2017-11-09

Family

ID=60244133

Family Applications (2)

Application Number Title Priority Date Filing Date
US15/479,392 Abandoned US20170323906A1 (en) 2016-05-06 2017-04-05 Display device
US16/004,546 Active US10361229B2 (en) 2016-05-06 2018-06-11 Display device

Family Applications After (1)

Application Number Title Priority Date Filing Date
US16/004,546 Active US10361229B2 (en) 2016-05-06 2018-06-11 Display device

Country Status (3)

Country Link
US (2) US20170323906A1 (ja)
JP (1) JP6668160B2 (ja)
CN (1) CN107346083B (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10074817B2 (en) * 2016-04-13 2018-09-11 Shenzhen China Star Optoelectronics Technology Co., Ltd. Thin film transistor array panel and method of fabricating the same
TWI699892B (zh) * 2018-09-21 2020-07-21 友達光電股份有限公司 電子裝置及其製造方法
US11515341B2 (en) * 2019-09-25 2022-11-29 Fuzhou Boe Optoelectronics Technology Co., Ltd. Array substrate, manufacturing method thereof, and display device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
US11171159B2 (en) * 2019-01-03 2021-11-09 Boe Technology Group Co., Ltd. Display backplane and method for manufacturing the same, display panel and display device
CN109904173B (zh) * 2019-01-11 2021-08-06 惠科股份有限公司 一种显示面板、显示面板的制造方法和显示装置
JP7464400B2 (ja) 2019-06-14 2024-04-09 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 薄膜デバイス
CN115769295A (zh) * 2020-07-09 2023-03-07 株式会社半导体能源研究所 显示装置及电子设备

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3039967B2 (ja) * 1990-08-03 2000-05-08 株式会社日立製作所 半導体装置
JP4372943B2 (ja) * 1999-02-23 2009-11-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2010003910A (ja) * 2008-06-20 2010-01-07 Toshiba Mobile Display Co Ltd 表示素子
SG2014013833A (en) * 2011-06-24 2014-10-30 Sharp Kk Display device and method for manufacturing same
KR102023295B1 (ko) * 2012-06-15 2019-09-19 소니 주식회사 표시 장치, 반도체 장치 및 표시 장치의 제조 방법
WO2015052991A1 (ja) * 2013-10-09 2015-04-16 シャープ株式会社 半導体装置およびその製造方法
KR102207916B1 (ko) * 2013-10-17 2021-01-27 삼성디스플레이 주식회사 박막트랜지스터 어레이 기판, 유기 발광 표시 장치 및 박막트랜지스터 어레이 기판의 제조 방법
US9691799B2 (en) * 2014-02-24 2017-06-27 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US9721973B2 (en) * 2014-02-24 2017-08-01 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US9214508B2 (en) * 2014-02-24 2015-12-15 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
WO2015194417A1 (ja) * 2014-06-17 2015-12-23 シャープ株式会社 半導体装置
KR102298336B1 (ko) * 2014-06-20 2021-09-08 엘지디스플레이 주식회사 유기발광다이오드 표시장치
US9685469B2 (en) * 2015-04-03 2017-06-20 Apple Inc. Display with semiconducting oxide and polysilicon transistors
US9911762B2 (en) 2015-12-03 2018-03-06 Innolux Corporation Display device
JP2018125340A (ja) * 2017-01-30 2018-08-09 株式会社ジャパンディスプレイ 表示装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10074817B2 (en) * 2016-04-13 2018-09-11 Shenzhen China Star Optoelectronics Technology Co., Ltd. Thin film transistor array panel and method of fabricating the same
TWI699892B (zh) * 2018-09-21 2020-07-21 友達光電股份有限公司 電子裝置及其製造方法
CN112951843A (zh) * 2018-09-21 2021-06-11 友达光电股份有限公司 电子装置及其制造方法
US11515341B2 (en) * 2019-09-25 2022-11-29 Fuzhou Boe Optoelectronics Technology Co., Ltd. Array substrate, manufacturing method thereof, and display device

Also Published As

Publication number Publication date
JP2017201665A (ja) 2017-11-09
CN107346083A (zh) 2017-11-14
JP6668160B2 (ja) 2020-03-18
CN107346083B (zh) 2020-10-30
US20180294286A1 (en) 2018-10-11
US10361229B2 (en) 2019-07-23

Similar Documents

Publication Publication Date Title
US10361229B2 (en) Display device
US10317763B2 (en) Display device
US6784032B2 (en) Active matrix organic light emitting display and method of forming the same
US10439010B2 (en) Display device
US10186529B2 (en) Thin film transistor substrate and display using the same
WO2017054271A1 (zh) 低温多晶硅tft基板
JP7085352B2 (ja) 表示装置
US9024323B2 (en) Array substrate and method of fabricating the same
US10211235B2 (en) Display device and manufacturing method thereof
US20070002195A1 (en) Thin film transistor liquid crystal display panel and method of fabricating the same
US9954014B2 (en) Thin film transistor substrate and display using the same
US9947691B2 (en) Array substrate, manufacturing method thereof and display panel
JP2001119029A (ja) 薄膜トランジスタ及びその製造方法及びそれを備えた液晶表示装置
US20100133541A1 (en) Thin film transistor array substrate, its manufacturing method, and liquid crystal display device
JP2010003910A (ja) 表示素子
US20060119778A1 (en) Active matrix display device and method for manufacturing the same
US20170184893A1 (en) Semiconductor apparatus, method of manufacturing same, and liquid crystal display apparatus
JP2005079283A (ja) 薄膜半導体装置及びその製造方法、電気光学装置、並びに電子機器
JP2010147351A (ja) 液晶表示装置及びその製造方法
US20130048998A1 (en) Semiconductor device, thin film transistor substrate, and display apparatus
US20080012023A1 (en) Thin-film transistor and image display device
US11374025B2 (en) Display device and manufacturing method thereof
US6894755B2 (en) Liquid crystal display device integrating driving circuit on matrix substrate
JP2020129635A (ja) 半導体装置および半導体装置の製造方法
JP4238155B2 (ja) 薄膜トランジスタ基板及びそれを備えた液晶表示装置並びにその製造方法

Legal Events

Date Code Title Description
AS Assignment

Owner name: JAPAN DISPLAY INC., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YAMAGUCHI, YOHEI;SUZUMURA, ISAO;MIYAKE, HIDEKAZU;REEL/FRAME:041854/0484

Effective date: 20170316

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION