US20170183767A1 - Mask Plate for Laser Irradiation and Method of Laser Encapsulation Using the Same - Google Patents

Mask Plate for Laser Irradiation and Method of Laser Encapsulation Using the Same Download PDF

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Publication number
US20170183767A1
US20170183767A1 US15/314,690 US201615314690A US2017183767A1 US 20170183767 A1 US20170183767 A1 US 20170183767A1 US 201615314690 A US201615314690 A US 201615314690A US 2017183767 A1 US2017183767 A1 US 2017183767A1
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Prior art keywords
laser
mask plate
region
panel
encapsulated
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Abandoned
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US15/314,690
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English (en)
Inventor
Rui Hong
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Assigned to BOE TECHNOLOGY GROUP CO., LTD. reassignment BOE TECHNOLOGY GROUP CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HONG, RUI
Publication of US20170183767A1 publication Critical patent/US20170183767A1/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • H01L51/5246—
    • H01L51/56—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • Embodiments of the present disclosure relates to a mask plate for laser irradiation and a method of laser encapsulation using the same.
  • a known encapsulating process mainly includes: assembling a first substrate with a second substrate that are coated with a sealant to form a display panel to be encapsulated; irradiating the display panel to be encapsulated by laser which is emitted from a laser generator and transmitted through (in a direction indicated by the arrow of FIG.
  • a mask plate so that the laser irradiates the sealant within an encapsulation region through a transmission region on the mask plate to melt the sealant by an energy of the laser beam; bonding the first substrate with the second substrate by using the melted sealant upon cooling, to form a sealed, encapsulating space inside the display panel, so as to complete the encapsulating process.
  • the energy of the laser beam is concentrated at a center of a light spot; consequently, in order to sufficiently irradiate the sealant, a width (indicated as d in FIG. 2 ) of an across section of the sealant coated on the encapsulating region is wider than a diameter ⁇ of a light spot of the laser, as illustrated in FIG. 2 .
  • the diameter ⁇ of the light spot of the laser is larger than the width d of the cross section of the sealant, the laser will not only irradiate the sealant, but also will irradiate both sides of the sealant.
  • the energy of the laser beam is extremely high with a transient temperature reaching 800° C. ⁇ 1000° C.
  • a safety area is usually reserved between the electronic devices and the encapsulating region (with a spacing of at least 0.7 mm).
  • the reserved safety area it is difficult for the display panel to achieve narrow frame design, and meanwhile a utilization of the substrate may be reduced.
  • Embodiments of the disclosure provide a mask plate for laser irradiation and a method of laser encapsulation using the same, which can be applied in encapsulating a display panel with a narrow frame, improve display effect of the encapsulated display panel and meanwhile improve the utilization of the substrate to reduce the cost.
  • the embodiments of the disclosure provide a mask plate for laser irradiation, the mask plate includes a laser blocking region and a laser transmitting region surrounding the laser blocking region, wherein the laser blocking region is configured to block laser having a predetermined wavelength; and the laser transmitting region is configured to allow laser having the predetermined wavelength to transmit therethrough, wherein, along a direction perpendicular to a surface of the mask plate, a width of a cross-section of the laser transmitting region is smaller than a diameter of a light spot of the laser having the predetermined wavelength.
  • the laser transmitting region corresponds to an encapsulating region of the panel to be encapsulated
  • the laser blocking region corresponds to a device region surrounded by the encapsulating region of the panel to be encapsulated.
  • the mask plate includes plural laser blocking regions, and upon placing the mask plate onto the panel to be encapsulated, the plural laser blocking regions correspond to plural device regions arranged in an array on the panel to be encapsulated, and the laser transmitting region corresponds to a region other than the plural device regions.
  • the mask plate includes: a first main body, which is located at the laser transmitting region and is made of transparent material; and a second main body, which is located at the laser blocking region and has a diffusing surface.
  • a wavelength of the laser is 810 nm ⁇ 1000 nm; and a haze of the diffusing surface is 40% ⁇ 90%.
  • the diffusing surface of the second main body located at the laser blocking region is located at a side of the second main body far away from the panel to be encapsulated.
  • the mask plate includes: a first main body, which is located at the laser transmitting region and is made of transparent material; and a second main body, which is located at the laser blocking region and has a light absorbing layer as its surface.
  • the light absorbing layer of the second main body located at the laser blocking region is located on a side of the second main body far away from the panel to be encapsulated.
  • the transparent material includes any one of glass, quartz and acrylic.
  • the second main body and the first main body are formed integrally.
  • a width of the cross-section of the laser transmitting region is larger than or equal to the width of a cross-section of the encapsulating region.
  • the width of the cross-section of the laser transmitting region is larger than the width of the cross-section of the encapsulating region by 0.02 mm ⁇ 0.1 mm.
  • a thickness of the mask plate is 3 mm ⁇ 5 mm.
  • the embodiments of the disclosure further provide a method of laser encapsulation using the above described mask plate, including: placing the mask plate onto the panel to be encapsulated so that the laser blocking region corresponds to the device region of the panel to be encapsulated and the laser transmitting region corresponds to the encapsulating region of the panel to be encapsulated; and allowing the laser to transmit through the mask plate to irradiate a sealant in the encapsulating region of the panel to be encapsulated to cure the sealant.
  • the sealant is made of silicon sealant; and a wavelength of the laser is 810 ⁇ 1000 nm.
  • the sealant in the encapsulating region of the panel to be encapsulated can be sufficiently irradiated by the laser beam transmitted through the laser transmitting region, so as to ensure that the sealant can sufficiently absorb the energy and can be melted and cured, so that the encapsulating process of the panel to be encapsulated is completed.
  • the laser blocking region outside the laser transmitting region can block the laser which would irradiate the regions outside the encapsulating region of the panel to be encapsulated, so as to prevent the energy of the laser from being delivered to the electronic devices close to edges of the encapsulating region in the device region of the panel to be encapsulated. Therefore, for design of the panel to be encapsulated, the electronic devices in the device region can be arranged to be closer to the encapsulating region to achieve narrow frame and further improve the utilization of the substrate in the panel to be encapsulated.
  • FIG. 1 is a schematic diagram illustrating a working principle of an existing method of encapsulating a display panel with laser by using a mask plate;
  • FIG. 2 is a schematic diagram illustrating an enlarged structure of a part “a” in FIG. 1 ;
  • FIG. 3A is a first top view illustrating a structure of a mask plate provided by an embodiment of the disclosure
  • FIG. 3B is a second top view illustrating a structure of the mask plate provided by the embodiment of the disclosure.
  • FIG. 4 is a first schematic diagram illustrating a cross-sectional structure along direction A-A′ in FIG. 3B ;
  • FIG. 5A is a second schematic diagram illustrating a cross-sectional structure along direction A-A′ in FIG. 3B ;
  • FIG. 5B is a third schematic diagram illustrating a cross-sectional structure along direction A-A′ in FIG. 3B ;
  • FIG. 6 is a transmittance-wavelength curve diagram illustrating laser irradiating a diffusing surface in FIG. 5A .
  • connection are not intended to define a physical connection or mechanical connection, but may include an electrical connection, directly or indirectly.
  • “On,” “under,” “right,” “left” and the like are only used to indicate relative position relationship, and when the position of the object which is described is changed, the relative position relationship may be changed accordingly.
  • An embodiment of the disclosure provides a mask plate 01 for laser irradiation.
  • the mask plate 01 includes a laser blocking region 11 and a laser transmitting region 12 surrounding the laser blocking region 11 .
  • the laser transmitting region 12 corresponds to a encapsulating region 21 of the panel 02 to be encapsulated
  • the laser blocking region 11 corresponds to a device region 22 surrounded by the encapsulating region 21 on the panel 02 to be encapsulated; and along a direction perpendicular to a surface of the mask plate 01 (not illustrated in FIG. 4 , please refer to FIGS.
  • a width (indicated as D hereinafter) of a cross-section of the laser transmitting region 12 is smaller than a diameter (indicated as ⁇ hereinafter) of a light spot of the laser, and the width D of the cross-section of the laser transmitting region is larger than or equal to a width (indicated as d hereinafter) of a cross-section of the encapsulating region 21 .
  • the above-described laser transmitting region 12 refers to a region in the mask plate 01 where the laser having a predetermined wavelength is permitted to transmit; while the laser blocking region 11 refers to a region where the laser having the predetermined wavelength is reflected or absorbed.
  • the term “laser having a predetermined wavelength” refers to the laser having the predetermined wavelength of which the energy is sufficient to melt a sealant 20 within the encapsulating region 21 of the panel 02 to be encapsulated, so that the sealant 20 can be cured and hence the panel 02 can be encapsulated.
  • the material and width of the mask plate 01 are not particularly defined in the embodiments of the present disclosure, but provided that it allows both the laser blocking region 11 and laser transmitting region 12 achieve corresponding functions mentioned above.
  • a thickness of the mask plate 01 is 3 mm ⁇ 5 mm. This range of thickness allows the laser to transmit through the laser transmitting region 12 sufficiently without any energy loss of the laser beam which may be resulted by an excessively thicker mask plate.
  • the encapsulating region 21 is a region covered by the sealant 20
  • the device region 22 is a region surrounded by the encapsulating region 21 .
  • the encapsulating region 21 of a panel 02 to be encapsulated is to encapsulate the electronic devices inside, thus a shape of the encapsulating region 21 for such panel is generally a square ring and a width of the cross-section of the encapsulating region 21 is usually equal to the width of the cross-section of the sealant 20 ; that is, a width of the square ring of the encapsulating region 21 illustrated in FIG. 3A .
  • the width D of the cross-section of the laser transmitting region 12 is just consistent with the width of the square ring of the encapsulating region 21 .
  • the panel 02 to be encapsulated is generally a motherboard, that is, the panel 02 to be encapsulated includes a plurality of device regions 22 arranged in an array, in which a spacing between any two adjacent device regions 22 along a row direction is the same with a spacing between any two adjacent device regions 22 along a column direction, and each of the device regions 22 is surrounded by the encapsulating region 21 .
  • the motherboard is encapsulated, it may be cut into a plurality of smaller panels with the same size.
  • a shape of the encapsulating region 21 is just a shape of a region on the motherboard except the plurality of device regions 22 .
  • the width d of the cross-section of the sealant 20 within the encapsulating region 21 is just a width between any two adjacent device regions 22 along a row direction or a column direction.
  • the mask plate 01 provided by the embodiment of the present disclosure includes plural laser blocking regions 11 disposed in one-to-one correspondence with the plural device regions 22 , while the laser transmitting region 12 is the region on the mask plate 01 except the laser blocking region 11 ; and the width of the cross-section of the laser transmitting region 12 is the width between any two adjacent laser transmitting regions 12 along the row direction or the column direction.
  • the laser beam can be transmitted through the laser transmitting region 12 to sufficiently irradiate the sealant 20 within the encapsulating region 21 to ensure that the sealant 20 can be melted and hence cured by sufficiently absorbing the laser, so that the panel 02 is encapsulated.
  • the laser blocking region 11 outside the laser transmitting region 12 can block the laser which would irradiate the regions outside the encapsulating region 21 , so as to prevent the energy of the laser from being delivered to the electronic devices in the device region closer to edges of the encapsulating region 21 . Therefore, for design of the panel 02 to be encapsulated, the electronic devices in the device region 22 can be arranged to be closer to the encapsulating region 21 to achieve narrow frame and further improve the utilization of the substrate in the panel 02 to be encapsulated.
  • the width D of the cross-section of the laser transmitting region 12 is larger than the width d of the cross-section of the encapsulating region 21 by 0.02 mm ⁇ 0.1 mm, so that the sealant 20 can absorb the light energy of the laser sufficiently without considerably increasing a diameter of the light spot of the laser, thereby improving the utilization of the laser beam.
  • the panel 02 to be subjected to laser encapsulation is an OLED display panel by way of example
  • a safety area is required to be reserved between the electronic devices and the encapsulating region to avoid the electronic devices inside the display panel to be burned by the laser beam with an extremely high transient temperature; as a result, a frame of the encapsulated OLEF display panel usually has a width reaching 1.7 mm ⁇ 1.8 mm.
  • the width of the frame of the encapsulated OLEF display panel can be decreased to 1.3 mm ⁇ 1.5 mm because the laser blocking region 11 blocks the laser irradiating both sides of the sealant 20 , which significantly reduces the width of the encapsulated display panel and improves the display effect thereof, thereby further reducing the cost.
  • the present disclosure recognizes that: the laser that is to irradiate both sides of the encapsulating region 21 but blocked by the laser blocking region 11 outside the laser transmitting region 12 may be reflected upwards to irradiate a surface of a laser generator emitting the laser, and damage a fiber in the laser generator.
  • an embodiment of the present disclosure provides a mask plate 01 including: a first main body 121 located at the laser transmitting region 12 , wherein the first main body 121 is made of transparent material which allows laser to transmit therethrough; and a second main body 111 located at the laser blocking region 11 , wherein a surface of the second main body 111 is a diffusing surface 112 .
  • the above-mentioned transparent material can be any one of glass, quartz, acrylic and other materials having high transmittance to most of laser;
  • the diffusing surface 112 can be an optical surface which can reflect the laser irradiating thereon and is obtained through processing the surface of the second main body 111 by, for example, sand blasting method.
  • Frit which can absorb infrared laser having a wavelength of 810 nm ⁇ 1000 nm at relatively higher efficiency. Therefore, when the wavelength of the laser as used for encapsulation is 810 nm ⁇ 1000 nm, a haze of the diffusing surface 112 of the mask plate according to the embodiment of the disclosure is 40% ⁇ 90%. Haze is a parameter which characterizes degree of diffusion. As illustrated in FIG.
  • the transmittance of the laser with a wavelength of 310 nm ⁇ 973 nm upon irradiating on the diffusing surface 112 will be less than 20%, that is, 80% of the laser is scattered off, which avoids the reflected laser to damage the laser generator.
  • the diffusing surface 112 can scatter off most of the laser irradiating thereon, thus the light energy of laser absorbed by the materials of the devices inside the panel 02 to be encapsulated is effectively decreased and an environment temperature surrounding the devices is reduced, so as to prevent the devices inside the panel 02 from cracked due to higher environment temperature.
  • the diffusing surface 112 of the second main body 111 can be, for example, located at the side of the mask plate 01 closer to the panel 02 to be encapsulated, or located at the side of the mask plate 01 far away from the panel 02 to be encapsulated.
  • the diffusing surface 112 is located at the side of the second main body 111 closer to the panel 02 , the diffusion of the laser irradiating the diffusing surface 112 may affect the transmission of the laser at the laser transmitting region 12 surrounding the diffusing surface 112 . Therefore, in one example of the embodiment, the diffusing surface 112 is located at the side of the second main body 111 far away from the panel 02 to be encapsulated.
  • the second main body 121 and the first main body 111 are formed integrally, in order to simplify the manufacturing process of the mask plate 01 .
  • the above-mentioned diffusing surface 112 with a haze of 40% ⁇ 90% can be obtained by performing a sand-blasting method to a corresponding surface of the second main body 121 by using fine sands having an average diameter of 0.1 mm ⁇ 0.2 mm.
  • the method is advantageous in low cost, low environment pollution and the like.
  • a mask plate 01 including: a first main body 121 which is located at the laser transmitting region 12 , wherein the first main body 121 is made of transparent material which allows laser to transmit therethrough; and a second main body 111 located at the laser blocking region 111 , wherein a surface of the second main body 111 is a light absorbing layer 113 .
  • the above-mentioned transparent material can be any one of glass, quartz, acrylic and other materials having high transmittance to most of laser;
  • the above-mentioned light absorbing layer can be made of light absorbing metal (for example, Mo, Cr, Cu etc.) and black organic coating or the like (for example, phthalocyanine, 2,3-naphthalocyanine, substituted indanthrone, and some high substituted anthraquinone etc.).
  • the light absorbing layer 113 is located at a surface of the second main body 111 .
  • it can be located at a side of the mask plate 01 closer to the panel 02 to be encapsulated, or located at a side of the mask plate 01 far away from the panel 02 to be encapsulated.
  • the light absorbing layer 113 is located at the side of the second main body 111 closer to the panel 02 , it may be increased in its temperature upon absorbing the laser irradiating thereon and affect the panel 02 closer thereto.
  • the light absorbing layer 113 is located at the side of the second main body 111 far away from the panel 02 to be encapsulated, so that most of the laser irradiating the light absorbing layer 113 can be absorbed, thus the light energy of laser absorbed by the materials of the devices inside the panel 02 to be encapsulated is effectively decreased and an environment temperature surrounding the devices is reduced, so as to prevent the devices inside the panel 02 from cracked due to higher environment temperature.
  • the second main body 121 and the first main body 111 are formed integrally, in order to simplify the manufacturing process of the mask plate 01 .
  • the above-mentioned light absorbing layer 113 can be deposited on the surface of the second main body 111 by a coating method.
  • an embodiment of the disclosure further provides a method of laser encapsulation using the above-mentioned mask plate.
  • the method includes: placing the mask plate onto the panel to be encapsulated, so that the laser blocking region corresponds to the device region of the panel to be encapsulated and the laser transmitting region corresponds to the encapsulating region of the panel to be encapsulated; and allowing the laser to transmit through the mask plate to irradiate a sealant in the encapsulating region of the panel to be encapsulated, so that the sealant is cured.
  • the sealant 20 is located in the encapsulating region 21 of the panel 02 to be encapsulated.
  • the sealant 20 is located in the encapsulating region 21 between the first substrate 31 and the second substrate 32 which are assembled together.
  • the laser beam can be transmitted through the laser transmitting region 12 to sufficiently irradiate the sealant 20 in the encapsulating region 21 to ensure that the sealant 20 can be melted and hence cured by sufficiently absorbing the laser, so that the panel 02 is encapsulated.
  • the width D of the cross-section of the laser transmitting region 12 is smaller than the diameter ⁇ of the light spot of the laser along the direction perpendicular to the surface of the mask plate 01 , when the panel 02 to be encapsulated is irradiated by the laser transmitted through the mask plate 01 , the laser blocking region 11 outside the laser transmitting region 12 can block the laser which would irradiate the regions outside the encapsulating region 21 , so as to prevent the energy of the laser from being delivered to the electronic devices in the device region 22 closer to edges of the encapsulating region 21 . Therefore, for design of the panel 02 to be encapsulated, the electronic devices in the device region 22 can be arranged to be closer to the encapsulating region 21 to achieve narrow frame and further improve the utilization of the substrate in the panel 02 to be encapsulated.
  • infrared laser having a wavelength of 810 nm ⁇ 1000 nm can be used for its relatively higher absorption efficiency with respective to Frit.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Laser Beam Processing (AREA)
  • Electroluminescent Light Sources (AREA)
US15/314,690 2015-05-28 2016-04-08 Mask Plate for Laser Irradiation and Method of Laser Encapsulation Using the Same Abandoned US20170183767A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201510284585.9A CN104846331B (zh) 2015-05-28 2015-05-28 一种应用于激光照射的掩膜板及激光封装方法
CN201510284585.9 2015-05-28
PCT/CN2016/078847 WO2016188238A1 (zh) 2015-05-28 2016-04-08 应用于激光照射的掩膜板及其激光封装方法

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US20170271615A1 (en) * 2015-09-15 2017-09-21 Boe Technology Group Co., Ltd. Screen-printing mask, method for fabricating the same, and related packaging method
US10340481B2 (en) * 2017-08-17 2019-07-02 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Manufacturing method of OLED display panel
US10396237B2 (en) 2016-04-19 2019-08-27 Boe Technology Group Co., Ltd. Light-emitting diode substrate and manufacturing method thereof, and display device
US10971698B2 (en) * 2018-04-11 2021-04-06 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. OLED display panel and manufacturing method for the same
US11289677B2 (en) 2018-04-25 2022-03-29 Yungu (Gu'an) Technology Co., Ltd. Display panel and display device having a protective pattern
CN115202514A (zh) * 2022-09-13 2022-10-18 惠科股份有限公司 有机发光显示面板、显示装置以及显示面板的封装方法

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CN106584868A (zh) * 2016-12-13 2017-04-26 大族激光科技产业集团股份有限公司 激光同步掩膜焊接封装柔性oled屏的方法与装置
CN106932944B (zh) * 2017-04-28 2020-06-30 上海天马有机发光显示技术有限公司 一种显示面板及其制作方法
CN107369783A (zh) * 2017-08-17 2017-11-21 武汉华星光电半导体显示技术有限公司 一种oled显示面板的制作方法

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US10396237B2 (en) 2016-04-19 2019-08-27 Boe Technology Group Co., Ltd. Light-emitting diode substrate and manufacturing method thereof, and display device
US11088296B2 (en) 2016-04-19 2021-08-10 Boe Technology Group Co., Ltd. Light-emitting diode substrate and manufacturing method thereof, and display device
US10340481B2 (en) * 2017-08-17 2019-07-02 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Manufacturing method of OLED display panel
US10971698B2 (en) * 2018-04-11 2021-04-06 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. OLED display panel and manufacturing method for the same
US11289677B2 (en) 2018-04-25 2022-03-29 Yungu (Gu'an) Technology Co., Ltd. Display panel and display device having a protective pattern
CN115202514A (zh) * 2022-09-13 2022-10-18 惠科股份有限公司 有机发光显示面板、显示装置以及显示面板的封装方法
US11895877B1 (en) 2022-09-13 2024-02-06 HKC Corporation Limited Organic light-emitting display panel with shielding terminals having varying widths, display device, and method of packaging display panel

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