US20160380173A1 - LED Sub-Mount and Method for Manufacturing Light Emitting Device Using the Sub-Mount - Google Patents

LED Sub-Mount and Method for Manufacturing Light Emitting Device Using the Sub-Mount Download PDF

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Publication number
US20160380173A1
US20160380173A1 US15/259,266 US201615259266A US2016380173A1 US 20160380173 A1 US20160380173 A1 US 20160380173A1 US 201615259266 A US201615259266 A US 201615259266A US 2016380173 A1 US2016380173 A1 US 2016380173A1
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Prior art keywords
mount
sub
adhesive
led chip
filling groove
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US15/259,266
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Chia-En Lee
Cheng-Ta Kuo
Der-Ling Hsia
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Lextar Electronics Corp
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Lextar Electronics Corp
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Priority to US15/259,266 priority Critical patent/US20160380173A1/en
Assigned to LEXTAR ELECTRONICS CORPORATION reassignment LEXTAR ELECTRONICS CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HSIA, DER-LING, KUO, CHENG-TA, LEE, CHIA-EN
Publication of US20160380173A1 publication Critical patent/US20160380173A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H01L33/0079—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

A light emitting device manufacturing method includes the following steps. A sub-mount, which has a plurality of electrical-conductive layers, is provided, and a surface between every adjacent two of the electrical-conductive layers has an adhesive-filling groove. An LED chip, which has a bottom substrate, is mounted on the sub-mount by a flip-chip way, and two electrodes of the LED chip are in contact with adjacent two of the electrical-conductive layers. Glue is filled along the adhesive-filling groove to be guided into a gap between the LED chip and the sub-mount.

Description

    RELATED APPLICATIONS
  • This application is a Divisional Application of the U.S. application Ser. No. 14/175,419, filed Feb. 7, 2014, which claims priority to Taiwan Application Serial Number 102105551, filed Feb. 18, 2013, all of which are herein incorporated by reference.
    • BACKGROUND
  • Field of Invention
  • The present invention relates to an LED sub-mount and a method for manufacturing the light-emitting device using the LED sub-mount.
  • Description of Related Art
  • A light emitting diode (LED) is a semiconductor light-emitting device, which is equipped with low power consumption, high luminous efficiency, long life and other environmental advantages that the traditional lights can hardly reach. In addition, different color LEDs, such as blue, ultraviolet, red and white LEDs were developed one by one, thereby making LEDs are more selective, and becoming one of the important light-emitting devices today.
  • A conventional LED chip is mounted on a substrate by several ways. For example, an adhesive may be dispensed on a bottom surface of an emitting diode chip and mount the emitting diode chip on the bonding area on the substrate with the adhesive. Another way is using a eutectic bonding process to mount an LED chip on the substrate, that is, the LED chip is fixed to the substrate by a flip-chip way and the LED chip has a eutectic layer on its electrode. When the eutectic layer on the electrode is heated over a eutectic temperature, the eutectic layer melts and rapidly cures so as to bond the LED chip on the substrate.
  • However, when the eutectic bonding process is used to mount an LED chip on the substrate, the LED chip may be damaged if a bottom substrate of the LED chip is removed by using a laser liftoff process. Without removing the bottom substrate of the LED chip, the light extraction efficiency of the LED chip can hardly be improved.
    • SUMMARY
  • It is therefore an objective of the present invention to provide an improved LED sub-mount and a method for manufacturing the light-emitting device using the LED sub-mount.
  • In accordance with the foregoing and other objectives of the present invention, a LED sub-mount includes a substrate body and a plurality of first electrical-conductive layers. The substrate body has a first surface. The first electrical-conductive layers are positioned on the first surface of the substrate body, wherein the first surface between every adjacent two of the first electrical-conductive layers has an adhesive-filling groove.
  • According to another embodiment disclosed herein, the substrate body further includes a second surface opposite to the first surface, the second surface has a plurality of second electrical-conductive layers disposed thereon, each of the second electrical-conductive layers is aligned with a corresponding first electrical-conductive layer and electrically connected with the corresponding first electrical-conductive layer via a through hole of the substrate body.
  • According to another embodiment disclosed herein, the substrate body includes a silicon substrate.
  • According to another embodiment disclosed herein, the adhesive-filling groove has a depth ranging from 5 microns to 100 microns.
  • According to another embodiment disclosed herein, the adhesive-filling groove has a width ranging from 25 microns to 500 microns.
  • In accordance with the foregoing and other objectives of the present invention, a light emitting device manufacturing method includes the steps of providing a sub-mount, which has a plurality of electrical-conductive layers, and a surface between every adjacent two of the electrical-conductive layers has an adhesive-filling groove; mounting an LED chip, which has a bottom substrate, on the sub-mount by a flip-chip way, and two electrodes of the LED chip are in contact with adjacent two of the electrical-conductive layers; filling an glue along the adhesive-filling groove to be guided into a gap between the LED chip and the sub-mount; and removing the bottom substrate of the LED chip.
  • According to another embodiment disclosed herein, the light emitting device manufacturing method further includes a laser liftoff step to remove the bottom substrate of the LED chip to expose a surface of the LED chip.
  • According to another embodiment disclosed herein, the light emitting device manufacturing method further includes a roughening treatment applied to the exposed surface of the LED chip.
  • According to another embodiment disclosed herein, the adhesive-filling groove has a depth ranging from 5 microns to 100 microns.
  • According to another embodiment disclosed herein, the adhesive-filling groove has a width ranging from 25 microns to 500 microns.
  • According to another embodiment disclosed herein, the light emitting device manufacturing method further includes a eutectic bonding process to mount the LED chip on the sub-mount.
  • Thus, the LED sub-mount and method for manufacturing the light-emitting device using the sub-mount disclosed herein enable the glue or adhesive to be easily filled into the adhesive-filling groove and guided into a gap between the LED chip and the sub-mount, thereby reducing the probability to damage LED chip while removing a bottom substrate of the LED chip using a laser liftoff step and improving the light extraction efficiency of LED chip. A roughening treatment is then applied to the exposed surface of the LED chips to enable the emitting light of the LED chips more uniform.
  • It is to be understood that both the foregoing general description and the following detailed description are by examples, and are intended to provide further explanation of the invention as claimed.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The invention can be more fully understood by reading the following detailed description of the embodiment, with reference made to the accompanying drawings as follows:
  • FIG. 1A illustrates a cross-sectional view of a LED sub-mount according to a first embodiment of this invention;
  • FIG. 1B illustrates a top view of the LED sub-mount in FIG. 1A;
  • FIG. 2A illustrates a cross-sectional view of a LED sub-mount according to a second embodiment of this invention;
  • FIG. 2B illustrates a top view of the LED sub-mount in FIG. 2A;
  • FIG. 3A illustrates a cross-sectional view of a LED sub-mount according to a third embodiment of this invention;
  • FIG. 3B illustrates a top view of the LED sub-mount in FIG. 3A;
  • FIG. 4A illustrates a cross-sectional view of a LED sub-mount according to a fourth embodiment of this invention;
  • FIG. 4B illustrates a top view of the LED sub-mount in FIG. 4A;
  • FIGS. 5A-5D illustrate a series of cross-sectional views to demonstrate a light emitting device manufacturing method according to an embodiment of this invention; and
  • FIGS. 6-7 illustrate a series of cross-sectional views to demonstrate a light emitting device manufacturing method according to another embodiment of this invention.
    •  DETAILED DESCRIPTION
  • Reference will now be made in detail to the present embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
  • In order to solve the drawbacks associated with the use of conventional eutectic layer flip-chip die-bonding process, the present invention provides a suitable LED sub-mount and manufacturing method using the LED sub-mount, such that the subsequent removal of a bottom substrate of the LED chip using a laser liftoff step has less probability to damage the LED chip and the light extraction efficiency of LED chip can be improved. The sub-mount and manufacturing method using the sub-mount are described in detail with the drawings.
  • Referring to both FIG. 1A and FIG. 1B, FIG. 1A illustrates a cross-sectional view of a LED sub-mount according to a first embodiment of this invention, and FIG. 1B illustrates a top view of the LED sub-mount in FIG. 1A. A sub-mount 100 includes a substrate body 102 and two first electrical-conductive layers 104. The first electrical-conductive layer 104 is positioned on a first surface 102 a of the substrate body 102. A first surface between two (immediately) adjacent first electrical-conductive layers 104 has an adhesive-filling groove 106 thereon. The adhesive-filling groove 106 is used to be filled by a glue or adhesive. The adhesive-filling groove 106 is designed to have such dimensions for the glue or adhesive to be easily filled into the adhesive-filling groove 106 and guided into a gap between the LED chip and the sub-mount 100. In this embodiment, the adhesive-filling groove 106 has a depth (d) ranging from 5 microns to 100 microns, but not being limited to. The adhesive-filling groove 106 has a width (w) ranging from 25 microns to 500 microns, but not being limited to. In addition, the substrate body 102 may be a silicon substrate, but not being limited to.
  • Referring to both FIG. 2A and FIG. 2B, FIG. 2A illustrates a cross-sectional view of a LED sub-mount according to a second embodiment of this invention, and FIG. 2B illustrates a top view of the LED sub-mount in FIG. 2A. The second embodiment is different from the first embodiment in that the sub-mount 100′ has electrical-conductive layers at two opposite surfaces thereof, and the sub-mount 100 has electrical-conductive layers at one side surface only. The sub-mount 100′ includes a substrate body 102′, two first electrical-conductive layers 104 a and two second electrical-conductive layers 104 b. The first electrical-conductive layer 104 a is positioned on the first surface 102 a of the substrate body 102′ while the second electrical-conductive layer 104 b is positioned on a second surface 102 b of the substrate body 102′. The first surface 102 a and the second surface 102 b are two opposite surfaces of the substrate body 102′. In addition, each second electrical-conductive layer 104 b is aligned with a corresponding first electrical-conductive layer 104 a and is electrically connected with the corresponding first electrical-conductive layer 104 a via a through hole 108 of the substrate body 102′ (i.e., via an electrical-conductive layer 104 c inside the through hole 108). The sub-mount 100′ can be as a substrate for mounting a surface mounting device thereon. A first surface between two (immediately) adjacent first electrical-conductive layers 104 a has an adhesive-filling groove 106 thereon. The adhesive-filling groove 106 is used to be filled by a glue or adhesive. The adhesive-filling groove 106 is designed to have such dimensions for the glue or adhesive to be easily filled into the adhesive-filling groove 106 and guided into a gap between the LED chip and the sub-mount 100′. Similarly, the adhesive-filling groove 106 has a depth ranging from 5 microns to 100 microns, but not being limited to. The adhesive-filling groove 106 has a width ranging from 25 microns to 500 microns, but not being limited to. In addition, the substrate body 102′ may be a silicon substrate, but not being limited to.
  • Referring to both FIG. 3A and FIG. 3B, FIG. 3A illustrates a cross-sectional view of a LED sub-mount according to a third embodiment of this invention, and FIG. 3B illustrates a top view of the LED sub-mount in FIG. 3A. The third embodiment is different from the first embodiment in that the sub-mount 200 a is used for mounting multiple LED chips thereon while the sub-mount 100 is used for mounting a single LED chip thereon only. The sub-mount 200 a includes a substrate body 202 a and four or more first electrical-conductive layers 204. The first electrical-conductive layer 204 is positioned on the first surface of the substrate body 202 a. A first surface between two (immediately) adjacent first electrical-conductive layers 204 has an adhesive-filling groove 206 thereon such that the sub-mount 200 a can be used to mount three LED chips (210 a, 210 b, 210 c) thereon, and each LED chip crosses a corresponding adhesive-filling groove 206. The adhesive-filling groove 206 is used to be filled by a glue or adhesive. The adhesive-filling groove 206 is designed to have such dimensions for the glue or adhesive to be easily filled into the adhesive-filling groove 206 and guided into a gap between the LED chip and the sub-mount 200 a. In this embodiment, the adhesive-filling groove 206 has a depth ranging from 5 microns to 100 microns, but not being limited to. The adhesive-filling groove 206 has a width ranging from 25 microns to 500 microns, but not being limited to. In addition, the substrate body 202 a may be a silicon substrate, but not being limited to.
  • Referring to both FIG. 4A and FIG. 4B, FIG. 4A illustrates a cross-sectional view of a LED sub-mount according to a fourth embodiment of this invention, and FIG. 4B illustrates a top view of the LED sub-mount in FIG. 4A. The fourth embodiment is different from the third embodiment in that the sub-mount 200 b is used for mounting multiple LED chips in two-dimension array while the sub-mount 200 a is used for mounting LED chips in one-dimension array. The sub-mount 200 b includes a substrate body 202 b and three first electrical-conductive layers 204 a. The first electrical-conductive layer 204 a is positioned on the first surface of the substrate body 202 b. A first surface between two (immediately) adjacent first electrical-conductive layers 204 a has an adhesive-filling groove 206, and the first electrical-conductive layer 204 a is wider (compared with the first electrical-conductive layer 204). Therefore, the sub-mount 200 b can be used to mount four LED chips (210 d, 210 e, 210 f, 210 g), and each LED chip crosses a corresponding adhesive-filling groove 206. The adhesive-filling groove 206 is used to be filled by a glue or adhesive. The adhesive-filling groove 206 is designed to have such dimensions for the glue or adhesive to be easily filled into the adhesive-filling groove 206 and guided into a gap between the LED chip and the sub-mount 200 b. In this embodiment, the adhesive-filling groove 206 has a depth ranging from 5 microns to 100 microns, but not being limited to. The adhesive-filling groove 206 has a width ranging from 25 microns to 500 microns, but not being limited to. In addition, the substrate body 202 a may be a silicon substrate, but not being limited to.
  • FIGS. 5A-5D illustrate a series of cross-sectional views to demonstrate a light emitting device 300 manufacturing method according to an embodiment of this invention. In FIG. 5A, a LED chip 210 with a bottom substrate 212 is mounted on a sub-mount 100 by a flip-chip way, and two electrodes of the LED chip 210 are in contact with adjacent two of the electrical-conductive layers 104. When the LED chip 210 is mounted on the sub-mount 100 by a eutectic bonding process, a gap between the LED chip 210 and the sub-mount 100 is less than 3 microns, which is not conducive to filling an adhesive to the gap between the LED chip 210 and the sub-mount 100. In FIG. 5B, the adhesive-filling groove 106 is designed to have such dimensions for the glue or adhesive 110 to be easily filled into the adhesive-filling groove 106 and guided into the gap between the LED chip 210 and the sub-mount 100. In FIG. 5C, when the glue or adhesive 110 filled into the adhesive-filling groove 106 is cured, a laser liftoff step may be used to remove the bottom substrate 212 of the LED chip 210 to expose a surface of the LED chip 210. Because the glue or adhesive 110 filled between the LED chip 210 and the sub-mount 100 is cured, the removing force applied to the bottom substrate 212 has less chance to damage the LED chip 210 when the LED chip 210 is reliably mounted on the sub-mount 100. In FIG. 5D, after removing the bottom substrate 212, an emitting surface of the LED chip 210 forms a rough surface 213 to enable the emitting light more uniform.
  • FIGS. 6-7 illustrate a series of cross-sectional views to demonstrate a light emitting device manufacturing method according to another embodiment of this invention. The manufacturing method of FIGS. 5A-5D is also used to mount multiple LED chips (210 a, 210 b, 210 c) on the sub-mount 200 a and fill the glue into the adhesive-filling groove 206. After the glue within the adhesive-filling groove 206 is cured, a substrate removal step, e.g., a laser liftoff step, is used to remove a bottom substrate (212 a, 212 b, 212 c) of the LED chips (210 a, 210 b, 210 c) so as to improve the light extraction efficiency of LED chip. A roughening treatment is applied to the exposed surface of the LED chips (210 a, 210 b, 210 c) to form rough surfaces (213 a, 213 b, 213 c) so as to enable the emitting light of the LED chips (210 a, 210 b, 210 c) more uniform.
  • According to the above-discussed embodiments, the LED sub-mount and method for manufacturing the light-emitting device using the LED sub-mount disclosed herein enable the glue or adhesive to be easily filled into the adhesive-filling groove and guided into a gap between the LED chip and the sub-mount, thereby reducing the probability to damage LED chip while removing a bottom substrate of the LED chip using a laser liftoff step and improving the light extraction efficiency of LED chip. A roughening treatment is then applied to the exposed surface of the LED chips to enable the emitting light of the LED chips more uniform.
  • Although the present invention has been described in considerable detail with reference to certain embodiments thereof, other embodiments are possible. Therefore, the spirit and scope of the appended claims should not be limited to the description of the embodiments contained herein.
  • It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims.

Claims (7)

What is claimed is:
1. A light emitting device manufacturing method comprising:
providing a sub-mount, which has a plurality of electrical-conductive layers, and a surface between every adjacent two of the electrical-conductive layers has an adhesive-filling groove;
mounting an LED chip, which has a bottom substrate, on the sub-mount by a flip-chip way, and two electrodes of the LED chip are in contact with adjacent two of the electrical-conductive layers; and
filling an glue along the adhesive-filling groove to be guided into a gap between the LED chip and the sub-mount.
2. The light emitting device manufacturing method of claim 1 further comprising a laser liftoff step to remove the bottom substrate of the LED chip to expose a surface of the LED chip.
3. The light emitting device manufacturing method of claim 2 further comprising a roughening treatment applied to the exposed surface of the LED chip.
4. The light emitting device manufacturing method of claim 1, wherein the adhesive-filling groove has a depth ranging from 5 microns to 100 microns.
5. The light emitting device manufacturing method of claim 1, wherein the adhesive-filling groove has a width ranging from 25 microns to 500 microns.
6. The light emitting device manufacturing method of claim 1 further comprising a eutectic bonding process to mount the LED chip on the sub-mount.
7. The light emitting device manufacturing method of claim 1, wherein the adjacent two of the electrical-conductive layers are in direct contact with an outer side surface of the adhesive-filling groove and not in direct contact with an inner side surface of the adhesive-filling groove.
US15/259,266 2013-02-18 2016-09-08 LED Sub-Mount and Method for Manufacturing Light Emitting Device Using the Sub-Mount Abandoned US20160380173A1 (en)

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TW102105551 2013-02-18
TW102105551A TWI483434B (en) 2013-02-18 2013-02-18 Led sub-mount and method for manufacturing light-emitting device using the sub-mount
US14/175,419 US9461213B2 (en) 2013-02-18 2014-02-07 LED sub-mount and method for manufacturing light emitting device using the sub-mount
US15/259,266 US20160380173A1 (en) 2013-02-18 2016-09-08 LED Sub-Mount and Method for Manufacturing Light Emitting Device Using the Sub-Mount

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US14/175,419 Division US9461213B2 (en) 2013-02-18 2014-02-07 LED sub-mount and method for manufacturing light emitting device using the sub-mount

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111326609A (en) * 2018-12-14 2020-06-23 昆山工研院新型平板显示技术中心有限公司 Light emitting device, manufacturing method of light emitting device and display device

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103199187B (en) * 2013-04-19 2015-11-25 安徽三安光电有限公司 A kind of LED encapsulation substrate and encapsulating structure and preparation method thereof
CN103247743B (en) * 2013-05-24 2016-04-20 安徽三安光电有限公司 Surface stuck type luminescent device and preparation method thereof
TWI596985B (en) * 2015-07-22 2017-08-21 億光電子工業股份有限公司 Light emitting device
KR102650341B1 (en) * 2016-11-25 2024-03-22 엘지전자 주식회사 Display device using semiconductor light emitting device and method for manufacturing
KR102356216B1 (en) * 2017-05-30 2022-01-28 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package and light unit
KR102385940B1 (en) * 2017-09-01 2022-04-13 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package and light source unit
KR102385939B1 (en) * 2017-09-01 2022-04-13 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package
KR102426118B1 (en) * 2017-10-13 2022-07-27 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package and light source unit
KR102432217B1 (en) * 2017-11-07 2022-08-12 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package and lighting apparatus
KR102550291B1 (en) * 2018-01-16 2023-07-03 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package and light source unit
KR102508538B1 (en) * 2018-02-08 2023-03-09 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package and light unit
KR102490162B1 (en) * 2018-02-14 2023-01-19 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device and light emitting device package including the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5786988A (en) * 1996-07-02 1998-07-28 Sandisk Corporation Integrated circuit chips made bendable by forming indentations in their back surfaces flexible packages thereof and methods of manufacture
US20060281203A1 (en) * 2005-06-09 2006-12-14 Lumileds Lighting U.S, Llc Method of removing the growth substrate of a semiconductor light emitting device
US20120193786A1 (en) * 2011-01-27 2012-08-02 Chia-Sheng Lin Chip package and method for forming the same
US20130026655A1 (en) * 2011-07-25 2013-01-31 Samsung Electronics Co., Ltd. Chip package structure and method of manufacturing the same
US20130214310A1 (en) * 2012-02-16 2013-08-22 Siliconware Precision Industries Co., Ltd. Semiconductor package and fabrication method thereof

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6800946B2 (en) * 2002-12-23 2004-10-05 Motorola, Inc Selective underfill for flip chips and flip-chip assemblies
US7824937B2 (en) * 2003-03-10 2010-11-02 Toyoda Gosei Co., Ltd. Solid element device and method for manufacturing the same
US6720664B1 (en) 2003-04-22 2004-04-13 Tyntek Corporation Submount-holder for flip chip package
JP4374913B2 (en) * 2003-06-05 2009-12-02 日亜化学工業株式会社 Light emitting device
TWI236103B (en) 2003-10-28 2005-07-11 South Epitaxy Corp Flip-chip LED package structure
JP2006073618A (en) * 2004-08-31 2006-03-16 Toyoda Gosei Co Ltd Optical element and manufacturing method thereof
US7365371B2 (en) 2005-08-04 2008-04-29 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed encapsulants
US20080179618A1 (en) * 2007-01-26 2008-07-31 Ching-Tai Cheng Ceramic led package
TWI331413B (en) * 2007-02-16 2010-10-01 Epistar Corp Led flip chip package structure and manufacture method thereof
TWI369009B (en) * 2007-09-21 2012-07-21 Nat Univ Chung Hsing Light-emitting chip device with high thermal conductivity
JPWO2011093405A1 (en) * 2010-02-01 2013-06-06 有限会社Ｍｔｅｃ Optical semiconductor device with chip size package
WO2011118934A2 (en) * 2010-03-23 2011-09-29 Kang Kim Light emitting diode device and lighting device using the same
CN102959708B (en) * 2010-06-29 2016-05-04 柯立芝照明有限公司 There is the electronic installation of flexible substrate
TWI418742B (en) * 2011-06-30 2013-12-11 Lextar Electronics Corp Optical brightening led package
US8324082B1 (en) * 2011-09-15 2012-12-04 SemiLEDs Optoelectronics Co., Ltd. Method for fabricating conductive substrates for electronic and optoelectronic devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5786988A (en) * 1996-07-02 1998-07-28 Sandisk Corporation Integrated circuit chips made bendable by forming indentations in their back surfaces flexible packages thereof and methods of manufacture
US20060281203A1 (en) * 2005-06-09 2006-12-14 Lumileds Lighting U.S, Llc Method of removing the growth substrate of a semiconductor light emitting device
US20120193786A1 (en) * 2011-01-27 2012-08-02 Chia-Sheng Lin Chip package and method for forming the same
US20130026655A1 (en) * 2011-07-25 2013-01-31 Samsung Electronics Co., Ltd. Chip package structure and method of manufacturing the same
US20130214310A1 (en) * 2012-02-16 2013-08-22 Siliconware Precision Industries Co., Ltd. Semiconductor package and fabrication method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111326609A (en) * 2018-12-14 2020-06-23 昆山工研院新型平板显示技术中心有限公司 Light emitting device, manufacturing method of light emitting device and display device
CN111326609B (en) * 2018-12-14 2021-05-25 成都辰显光电有限公司 Light emitting device, manufacturing method of light emitting device and display device
US11495712B2 (en) 2018-12-14 2022-11-08 Chengdu Vistar Optoelectronics Co., Ltd. Light emitting device, method for making the same and display apparatus

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TW201434177A (en) 2014-09-01

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