US20160219702A1 - Selective micro device transfer to receiver substrate - Google Patents

Selective micro device transfer to receiver substrate Download PDF

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Publication number
US20160219702A1
US20160219702A1 US15/002,662 US201615002662A US2016219702A1 US 20160219702 A1 US20160219702 A1 US 20160219702A1 US 201615002662 A US201615002662 A US 201615002662A US 2016219702 A1 US2016219702 A1 US 2016219702A1
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United States
Prior art keywords
substrate
force
receiver
micro devices
donor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US15/002,662
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English (en)
Inventor
Gholamreza Chaji
Ehsan Fathi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vuereal Inc
Original Assignee
Gholamreza Chaji
Ehsan Fathi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CA2879465A external-priority patent/CA2879465A1/en
Priority claimed from CA2879627A external-priority patent/CA2879627A1/en
Priority claimed from CA2880718A external-priority patent/CA2880718A1/en
Priority claimed from CA2883914A external-priority patent/CA2883914A1/en
Priority claimed from CA2890398A external-priority patent/CA2890398A1/en
Priority claimed from CA2887186A external-priority patent/CA2887186A1/en
Application filed by Gholamreza Chaji, Ehsan Fathi filed Critical Gholamreza Chaji
Priority to US15/060,942 priority Critical patent/US10134803B2/en
Assigned to CHAJI, GHOLAMREZA reassignment CHAJI, GHOLAMREZA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FATHI, Ehsan
Publication of US20160219702A1 publication Critical patent/US20160219702A1/en
Assigned to VUEREAL INC. reassignment VUEREAL INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHAJI, GHOLAMREZA
Assigned to CHAJI, GHOLAMREZA reassignment CHAJI, GHOLAMREZA CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNOR FULL NAME PREVIOUSLY RECORDED AT REEL: 038278 FRAME: 0781. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Assignors: FATHI, EHSANALLAH
Priority to US15/442,293 priority patent/US20170215280A1/en
Priority to US15/653,120 priority patent/US10700120B2/en
Assigned to CHAJI, GHOLAMREZA reassignment CHAJI, GHOLAMREZA CORRECTIVE ASSIGNMENT TO CORRECT THE SPELLING OF THE FIRST NAME OF THE ASSIGNOR PREVIOUSLY RECORDED ON REEL 040473 FRAME 0564. ASSIGNOR(S) HEREBY CONFIRMS THE CORRECTIVE ASSIGNMENT. Assignors: FATHI, Ehsanollah
Priority to PCT/IB2018/055347 priority patent/WO2019016730A1/en
Priority to US16/107,692 priority patent/US10847571B2/en
Priority to US16/107,680 priority patent/US20180358404A1/en
Priority to US16/912,049 priority patent/US11735623B2/en
Priority to US16/931,132 priority patent/US11728302B2/en
Priority to US17/200,467 priority patent/US20210202572A1/en
Priority to US17/222,506 priority patent/US20210243894A1/en
Priority to US17/365,708 priority patent/US11476216B2/en
Priority to US17/365,634 priority patent/US11735545B2/en
Priority to US17/569,893 priority patent/US11728306B2/en
Priority to US17/569,900 priority patent/US11735546B2/en
Priority to US17/569,918 priority patent/US11735547B2/en
Priority to US17/730,719 priority patent/US20220254745A1/en
Priority to US18/177,613 priority patent/US20230207611A1/en
Abandoned legal-status Critical Current

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Definitions

  • the present disclosure relates to device integration into system substrates. More specifically, the present disclosure relates to selective transfer of micro devices from a donor substrate to a receiver substrate.
  • a method of transferring selected micro devices in an array of micro devices each of which is bonded to a donor substrate with a donor force to contact pads in an array on a receiver substrate comprising: aligning the donor substrate and the receiver substrate so that each of the selected micro devices is in line with a contact pad on the receiver substrate; moving the donor substrate and the receiver substrate together until each of the selected micro devices is in contact or proximity with a respective contact pad on the receiver substrate; generating a receiver force that acts to hold the selected micro devices to their contact pads while not affecting other micro devices in contact with or proximity contact with the receiver substrate; and moving the donor substrate and the receiver substrate apart leaving the selected micro devices on the receiver substrate.
  • Some embodiments further comprise weakening the donor force bonding the micro devices to the donor substrate to assist micro device transfer.
  • the donor force for the selected micro devices is weakened to improve selectivity in micro device transfer.
  • the receiver force is generated selectively to improve selectivity in micro device transfer.
  • Some embodiments further comprise weakening the donor force using laser lift off.
  • Some embodiments further comprise modulating the force by magnetic field.
  • Some embodiments further comprise weakening the donor force by heating an area of the donor substrate.
  • Some embodiments further comprise modulating the receiver force by heating the receiver substrate.
  • the heating is performed by passing a current through the contact pads.
  • the receiver force is generated by mechanical grip.
  • Some embodiments further comprise performing an operation on the receiver substrate so that the contact pads permanently bond with the selected micro devices.
  • the receiver force is generated by electrostatic attraction between the selected micro devices and the receiver substrate. In some embodiments the receiver force is generated by an adhesive layer positioned between the selected micro devices and the receiver substrate.
  • Some embodiments further comprise removing the donor force; and applying a push force to selected micro devices to move the devices toward the receiver substrate.
  • the push force is created by a sacrificial layer deposited between the selected micro device and the donor substrate.
  • a receiver substrate structure comprising: an array of landing areas for holding micro devices from a donor substrate selectively, each landing area comprising: at least one contact pad for coupling or connecting a micro device to at least one circuit or a potential in the receiver substrate; and at least one force modulation element for creating a receiver force for holding micro devices on the receiver substrate.
  • the landing area For clarity, the area where the micro device sits on the receiver substrate is called the landing area.
  • the force modulation element is an electrostatic structure. In some embodiments the force modulation element is a mechanical grip. In some embodiments, for each landing area, a same element acts as the force modulation element and the contact pad.
  • FIG. 1A shows a donor substrate and a receiver substrate before the transfer process begins.
  • FIG. 1B shows a donor substrate and a receiver substrate before the transfer process begins.
  • FIG. 2A shows a flowchart of modulating at least one of the donor or receiver forces after donor and receiver substrates are in contact or proximity with each other.
  • FIG. 2B shows a flowchart of modulating the donor forces in advance and modulating receiver forces if needed after donor and receiver substrates are in contact or proximity with each other.
  • FIG. 2C shows flowchart of modulating the receiver forces in advance and modulating donor forces if needed after donor and receiver substrates are in contact or proximity with each other.
  • FIG. 3A shows the step of aligning the donor and receiver substrates
  • FIG. 3B shows the step of moving the substrates together within a defined distance margin.
  • FIG. 3C-1 shows one embodiment of modulating the forces by applying receiver forces selectively.
  • FIG. 3C-2 shows one embodiment of modulating the forces by weakening the donor force selectively and applying receiver force globally.
  • FIG. 3D shows one embodiment of modulating the forces by applying receiver and weakening donor forces selectively.
  • FIG. 3E shows the step of moving the substrate apart.
  • FIG. 4A shows a donor substrate with different micro devices interleaved and the corresponding contact pads in the receiver substrate are aligned with each micro device accordingly enabling transferring different micro devices at once.
  • FIG. 4B shows a donor substrate with different micro devices in groups and the corresponding contact pads in the receiver substrate are aligned with each micro device accordingly enabling transferring different micro devices at once.
  • - 4 C show arrangements with different pitches of micro devices and contact pads.
  • FIG. 4C shows a donor substrate with different micro devices interleaved and only one set of the corresponding contact pads in the receiver substrate with one of the micro device types is aligned with each micro device accordingly so multiple transferring process is needed to transfer all different types of micro devices.
  • FIG. 5A shows selective and global heating elements incorporated into substrates.
  • FIG. 5B shows one embodiment for pattering selective and global heating elements incorporated into substrates.
  • FIG. 5C shows use of external sources to selectively heat up at least one substrate.
  • FIG. 6A shows a flowchart of method 1100 for selectively transferring micro devices from a donor substrate to a receiver substrate.
  • FIG. 6B shows the step of preparing the donor and receiver substrates for selective transfer.
  • FIG. 6C shows the step of aligning the substrates.
  • FIG. 6D shows the step of moving the substrates toward each other within a predefined distance margin.
  • FIG. 6E shows the step of creating receiver forces by curing the adhesive (e.g. applying pressure or heat). This can be globally or selectively.
  • FIG. 6F shows the step of reducing donor forces if needed. This can be globally or selectively.
  • FIG. 6G shows the step of moving the substrates away from each other.
  • FIG. 7A shows other possible arrangements of adhesive on receiver substrate.
  • FIG. 7B shows a contact pad with a cut out before and after application of an adhesive.
  • FIG. 8 shows a stamping process that can be used to apply adhesive to contact pads.
  • FIG. 9 shows a flowchart of method 1200 for selectively transferring micro devices from a donor substrate to a receiver substrate.
  • FIG. 10 shows a donor substrate and a receiver substrate setup to perform method 1200 .
  • FIG. 11A shows the step of aligning donor and receiver substrates.
  • FIG. 11B shows the step of moving donor and receiver substrates to a defined distance margin while mechanical force is loose.
  • FIG. 11C shows the step of increasing mechanical forces.
  • FIG. 11D shows the step of reducing donor forces if needed (this step can be done in advance as well).
  • FIG. 11E shows moving the donor and receiver substrates away from each other.
  • FIG. 12A shows a flowchart of method 1300 for selectively transferring micro devices from a donor substrate to a receiver substrate.
  • FIG. 12B shows a donor substrate and a receiver substrate setup to perform method 1300 .
  • FIG. 13A shows the step of aligning the donor and receiver substrates.
  • FIG. 13B shows the step of moving the substrates within a predefined distance margin.
  • FIG. 13C shows the step of creating receiver force by applying potential to electrostatic elements. This can be done selectively or globally.
  • FIG. 13D shows the step of reducing the donor force if needed. This can be done globally or selectively.
  • FIG. 13E shows the step of moving the substrates away.
  • FIG. 14A shows another alternative placement for electrostatic layer.
  • FIG. 14B shows another alternative placement for electrostatic layer.
  • FIG. 14C shows another alternative placement for electrostatic layer.
  • FIG. 14D shows another alternative placement for electrostatic layer.
  • FIG. 15A shows another alternative geometrie for micro devices and contact pads.
  • FIG. 15B shows another alternative geometrie for micro devices and contact pads.
  • FIG. 15C shows another alternative geometrie for micro devices and contact pads.
  • FIG. 15D shows another alternative geometrie for micro devices and contact pads.
  • FIG. 15E shows another alternative geometrie for micro devices and contact pads.
  • FIG. 16 shows a flowchart of method 1400 for selectively transferring micro devices from a donor substrate to a receiver substrate.
  • FIG. 17A shows the step of aligning the donor and receiver substrates.
  • FIG. 17B shows the step of moving the substrates to a predefined distance margin from each other.
  • FIG. 17C shows one embodiment for the step of creating a receiver force if needed. This can be globally or selectively. The force can be created with different method.
  • FIG. 17D shows applying a push force to the micro devices from the donor substrate.
  • the push force from donor substrate should be selective.
  • FIG. 17E shows the step of moving substrate away.
  • FIG. 18A shows a platform for testing by biasing at least one of the donor substrate or the receiver substrate to enable testing the micro devices for defects and performance.
  • the output of the micro device is through the receiver substrate.
  • FIG. 18B shows a platform for testing by biasing at least one of the donor substrate or the receiver substrate to enable testing the micro devices for defects and performance.
  • the output of the micro device is through the donor substrate.
  • FIG. 19 shows a simplified biasing condition of receiver substrate for testing the micro devices for defect and performance analysis.
  • micro devices including light emitting diodes (LEDs), Organic LEDs, sensors, solid state devices, integrated circuits, MEMS (micro-electro-mechanical systems) and other electronic components, are typically fabricated in batches, often on planar substrates. To form an operational system, micro devices from at least one donor substrate need to be selectively transferred to a receiver substrate.
  • LEDs light emitting diodes
  • Organic LEDs Organic LEDs
  • sensors solid state devices
  • integrated circuits integrated circuits
  • MEMS micro-electro-mechanical systems
  • FIG. 1 shows a donor substrate 100 and receiver substrate 200 , before the transfer process begins.
  • Micro devices 102 a, 102 b, 102 c begin in an array attached to donor substrate 100 .
  • the receiver substrate consists of an array of landing areas 202 a, 202 b, 202 c where the micro devices will sit.
  • the landing areas 202 a, 202 b, 202 c each include at least one force modulation element 204 a, 204 b, 204 c and at least a contact pad 206 a, 206 b, 206 c.
  • the force modulation element and contact pads can be different as shown in FIG. 1A or can be the same structure as shown in FIG. 1B .
  • the micro devices 102 may be coupled or connected to a circuit or a potential on the receiver substrate 200 through contact pads 206 a, 206 b, 206 c.
  • the force modulation elements 204 a, 204 b, 204 c create a transfer force to hold the micro device 102 a, 102 b, 102 c selectively on the receiver substrate 200 and separate them from the donor substrate 100 .
  • the donor substrate 100 is the substrate upon which micro devices 102 are manufactured or grown or another temporary substrate onto which they have been transferred.
  • Micro devices 102 can be any micro device that is typically manufactured in planar batches including LEDs, OLEDs, sensors, solid state devices, integrated circuit, MEMS, and other electronic components.
  • Donor substrate 100 is chosen according to the manufacturing process for a particular type of micro device 102 .
  • donor substrate 100 is typically sapphire.
  • the atomic distance of donor substrate 100 should match that of the material being grown in order to avoid defects in the film.
  • Each micro device 102 is attached to donor substrate 100 by a force, FD, determined by the manufacturing process and the nature of the micro devices 102 .
  • FD will be substantially the same for each micro device 102 .
  • Receiver substrate 200 can be any more desirable location for micro devices 102 .
  • the landing area on the receiver substrate as shown in FIG. 1B refers to the location where micro device sits on the receiver substrate and may consist of at least one contact pad 101 a and at least one force modulation element 101 b. Although in some of the figures the landing area may be the same size as the contact pads 202 , the contact pads 202 can be smaller than the landing area. Contact pads 202 are the locations where micro devices may be coupled or directly connected to the receiver substrate 200 . In this description, landing area and contact pads are used interchangeably.
  • the goal in selective transfer is to transfer some, selected micro devices 102 , from donor substrate 100 to receiver substrate 200 .
  • the transfer of micro devices 102 a and 102 b onto contact pads 206 a and 206 b without transferring micro device 102 c will be described.
  • the donor force for micro devices is weakened to assist micro device transfer.
  • the donor force for the selected micro devices is weakened selectively to improve selectivity in micro device transfer.
  • FIGS. 2A-2C show exemplary flowcharts of selective transfer methods 1000 A- 1000 C.
  • FIG. 1 shows a donor substrate 100 and a receiver substrate 200 suitable for performing any of methods 1000 .
  • Method 1000 A will be described with reference to FIGS. 3A-3E .
  • Methods 1000 B and 1000 C are analogous variations of method 1000 A.
  • a donor substrate 100 and receiver substrate 200 are aligned so that selected micro devices 102 a, 102 b are in line with corresponding contact pads 202 a, 202 b, as shown in FIG. 3A .
  • Micro device 102 c is not to be transferred so, although shown as aligned, it may or may not align with contact pad 202 c.
  • donor substrate 100 and receiver substrate 200 are moved together until the selected micro devices 102 a, 102 b are positioned within a defined distance of contact pads 202 a, 202 b, as shown in FIG. 3B .
  • the defined distance may correspond to full or partial contact but is not limited thereto. In other words, it may not be strictly necessary that selected micro devices 102 a, 102 b actually touch corresponding contact pads 202 a, 202 b, but must be near enough so that the forces described below can be manipulated.
  • forces between selected micro devices 102 , donor substrate 100 and receiver substrate 200 (and contact pads 202 ) are modulated so as to create a net force towards receiver substrate 200 for selected micro devices and a net force towards donor substrate 100 (or zero net force) for other micro devices 102 c.
  • FR can be generated selectively and therefore act only on selected micro devices 102 a, 102 b, as shown in FIG. 3C-1 .
  • FR can also be generated globally and apply across all of receiver substrate 200 and therefore act on micro devices 102 a, 102 b, 102 c, as shown in FIG. 3C-2 here donor forces may selectively get weakened.
  • the landing area on the receiver substrate may include a force modulation element to cause FR force modulation, fully or partially.
  • a force modulation element to cause FR force modulation, fully or partially.
  • Methods for selective and global generation of FR will be described below, including adhesive, mechanical and electrostatic and magnetic techniques. Additionally, examples of force modulation elements in landing area are described below. However, one of skill in the art knows that different variations of the force modulation elements that are not listed here are possible. Moreover, it should be understood that the shapes and structures of the contact pads and the force modulation elements are used for explanation and are not limited to the ones used in this description.
  • donor force FD is selectively weakened for selected micro devices 102 a, 102 b, so that FD′ is less than FR, as shown in FIG. 3D .
  • This may be done, for example, using laser lift off techniques, lapping or wet/dry etching.
  • it may be desirable to use selective and global generation of FR simultaneously. For example, it may be infeasible to generate a selective FR of sufficient magnitude to overcome FD′ alone.
  • the global component of FR should preferably remain small, ideally less than FD′, while the sum of the global and the selective components of FR is greater than FD′, but less than FD.
  • steps 1002 A- 1006 A can sometimes be interspersed with one another. For example, selective or global weakening of FD could take place before the substrates are brought together.
  • donor substrate 100 and receiver substrate 200 are moved apart, leaving selected micro devices 102 a, 102 b attached to corresponding contact pads 202 a, 202 b, as shown in FIG. 3E .
  • donor substrate 100 and receiver substrate 200 can be re-aligned and steps 1002 A to 1008 A can be repeated in order to transfer a different set of micro devices 102 to a different set of contact pads 202 .
  • Additional layers can also be deposited on top of or in between micro devices 102 , for example, during the manufacture of a LED display, transparent electrode layers, fillers, planarization layers and other optical layers can be deposited.
  • FIG. 2B shows method 1000 B; an alternative embodiment of method 1000 A.
  • the force between micro devices 102 a, 102 b and donor substrate 100 are modulated globally (for all devices in an area of donor substrate) or selectively (for selected micro devices 102 a, 102 b only) so as to weaken donor force, FD.
  • donor substrate 100 and receiver substrate 200 are aligned so that selected micro devices 102 a, 102 b are in line with corresponding contact pads 202 a, 202 b.
  • donor substrate 100 and receiver substrate 200 are moved together until the selected micro devices 102 a, 102 b touch contact pads 202 a, 202 b. It may not be strictly necessary that selected micro devices 102 a, 102 b actually touch corresponding contact pads 202 a, 202 b, but must be near enough so that the forces described below can be manipulated.
  • the forces between selected micro devices 102 and receiver substrate 200 (and contact pads 202 ) are modulated so as to create a net force towards receiver substrate 200 for selected micro devices and a net force towards donor substrate 100 (or zero net force) for other micro devices 102 c.
  • donor substrate 100 and receiver substrate 200 are moved apart, leaving selected micro devices 102 a, 102 b attached to corresponding contact pads 202 a, 202 b.
  • Step 1012 B optional post processing is applied to selected micro devices 102 a, 102 b. Once donor substrate 100 is separated from receiver substrate 200 , further processing steps can be taken. Additional layers can be deposited on top of or in between micro devices 102 , for example, during the manufacture of a LED display, transparent electrode layers, fillers, planarization layers and other optical layers can be deposited. Step 1012 B is optional and may be applied at the conclusion of method 1000 A or 1000 C as well.
  • FIG. 2C shows method 1000 C; an alternative embodiment of method 1000 A.
  • contact pads 202 a, 202 b corresponding to selected micro devices 102 a, 102 b are treated to create extra force upon contact.
  • an adhesive layer may be applied, as described in greater detail below.
  • donor substrate 100 and receiver substrate 200 are aligned so that selected micro devices 102 a, 102 b are in line with corresponding contact pads 202 a, 202 b.
  • donor substrate 100 and receiver substrate 200 are moved together until the selected micro devices 102 a, 102 b touch contact pads 202 a, 202 b.
  • the forces between selected micro devices 102 and donor substrate 100 are modulated so as to create a net force towards receiver substrate 200 for selected micro devices and a net force towards donor substrate 100 (or zero net force) for other micro devices 102 c.
  • donor substrate 100 and receiver substrate 200 are moved apart, leaving selected micro devices 102 a, 102 b attached to corresponding contact pads 202 a, 202 b.
  • any of the methods 1000 A, 1000 B, 1000 C can be applied multiple times to the same receiver substrate 200 , using different or the same donor substrates 100 or the same donor substrate 100 using different receiver substrates 200 .
  • Each pixel may comprise red, green and blue LEDs in a cluster.
  • manufacturing LEDs is more easily done in batches of a single colour and on substrates that are not always suitable for incorporation into a display. Accordingly, the LEDs must be removed from the donor 100 substrate, possibly where they are grown, and placed on a receiver substrate, which may be the backplane of a display, in RGB clusters.
  • the color This is simplest when the pitch of the array of pixels can be set to match the pitch of the array of LEDs on the donor substrate.
  • FIGS. 4A and 4B show arrangements where the pitch of the LEDs on the donor substrate is one seventh the pitch of the contact pads on the receiver substrate.
  • matching the pitch of an array of pixels to the donor substrate is likely to be infeasible.
  • the pitch of the pixels and the array of contact pads on the receiver substrate is designed based on desired product specifications such as size and resolution of a display.
  • receiver substrate and donor substrate are not aligned.
  • all red LEDs are transferred.
  • all green LEDs are transferred.
  • heat can be used in step 1008 A to weaken FD or after step 1008 A to create a permanent bond between micro devices 102 and contact pads 202 .
  • heat can be generated using resistive elements incorporated into donor substrate 100 and/or receiver substrate 200 .
  • FIG. 5A shows selective and global heating elements incorporated into substrates.
  • Selective heating elements 300 and global heating element 302 may be incorporated into donor substrate 100 while selective heating elements 304 and global heating element 306 may be incorporated into receiver substrate 200 .
  • selective heating can be achieved using a patterned global heater, shown in plan view in FIG. 5B .
  • FD can be weakened by applying heat to the interface between a micro device 102 and donor substrate 100 .
  • selective heating elements 300 are sufficient to heat the interface past a threshold temperature where micro devices 102 will detach.
  • global heater 302 can be used to raise the temperature to a point below the threshold while selective heaters 300 raise the temperature further, only for selected micro devices 102 a, 102 b above the threshold.
  • An environmental heat source e.g. a hot room, can substitute for the global heater.
  • Heat can also be used to create a permanent bond between micro devices 102 and contact pads 202 .
  • contact pads 202 should be constructed of a material that will cure when heated, creating a permanent bond.
  • selective heating elements 304 are sufficient to heat contact pads 202 past a threshold temperature to cause curing.
  • global heater 306 can be used to raise the temperature to a point below the threshold for curing while selective heaters 304 raise the temperature for selected contact pads 202 a, 202 b above the threshold.
  • An environmental heat source e.g. a hot room, can substitute for the global heater. Pressure may also be applied to aid in permanent bonding.
  • micro devices 102 or contact pads 202 may themselves act as the resistive elements in selective heaters 300 , 304 .
  • Heat can also be applied in a selective manner using lasers.
  • lasers it is likely that at least one of the donor substrate 100 and the receiver substrate 200 will have to be constructed of material that is at least semi-transparent to the laser being used.
  • shadow mask can be used to selectively block the laser from the non-selected devices.
  • the shadow mask 501 is aligned with the receiver substrate or donor substrate depending on direction of laser. Then laser can cover the either substrate partially or fully.
  • raster scan or step-and-repeat may be used to cover the entire intended area on the substrate.
  • a layer with higher laser absorption rate can be added to the force modulation element. It is possible to use the contact pad as the force modulation element in the receiver substrate.
  • FR is generated by adhesive.
  • the FR is modulated either by selective application of adhesive to the landing area on the receiver substrate (or selected micro devices) or by selective curing of an adhesive layer.
  • This method can be used in combination with weakening the donor force selectively or globally and is compatible with any of the methods 1000 A, 1000 B, and 1000 C or any combination of them. Although, the following description is based on 1000 A similar approaches can be used for 1000 B, 1000 C and the combination of the methods. In addition, the order of donor force weakening step 1110 can be changed in reference to other steps without affecting the results.
  • FIG. 6A shows a flowchart of method 1100 , a modified version of method 1000 specific to the use of adhesive to generate FR.
  • FIG. 6B shows donor substrate 100 and receiver substrate 200 setup to perform method 1100 .
  • Donor substrate 100 is shown in cross section and receiver substrate 200 is shown in cross section and plan view.
  • Donor substrate 100 has an array of micro devices 102 attached.
  • Donor force FD acts to hold micro devices 102 to donor substrate 100 .
  • Receiver substrate 200 has an array of contact pads 212 attached. Although FIG. 6B shows the force modulation element 500 connected to the contact pads 212 , they can be physically separated.
  • contact pads 212 a, 212 b are surrounded by a ring of adhesive 500 .
  • Adhesive 500 has been applied selectively to contact pads 212 where transfer of a micro device is desired so that when donor substrate 100 and receiver substrate 200 are moved together, micro devices 102 a, 102 b will make contact with adhesive 500 as well as contact pads 212 a, 212 b.
  • Method 1100 will be explained with reference to FIGS. 6B-6F .
  • adhesive is selectively applied as shown in FIG. 6B .
  • donor substrate 100 and receiver substrate 200 are aligned so that selected micro devices 102 a, 102 b are in line with corresponding selected contact pads 212 a, 212 b, as shown in FIG. 6C .
  • donor substrate 100 and receiver substrate 200 are moved together until selected micro devices 102 a, 102 b are in contact with corresponding selected contact pads 212 a, 212 b and adhesive 500 , as shown in FIG. 6D .
  • receiver force is generated, as shown in FIG. 6E .
  • FR is generated by adhesion between micro devices 102 a, 102 b, adhesive 500 and at least one of contact pads 212 a, 212 b and receiver substrate 200 .
  • FR acts to hold selected micro devices 102 to corresponding selected contact pads 212 .
  • FR can be generated selectively by applying adhesive 500 selectively, as shown.
  • donor force FD is selectively (or globally) weakened for selected micro devices 102 a, 102 b, so that FD′ is less than FR, as shown in FIG. 6F .
  • The may be done, for example, using laser lift off techniques, lapping or wet/dry etching.
  • donor force FD can be weakened for all the micro devices.
  • force modulation is done by selective adhesive application to the selected force element on the receiver substrate. The order of FD and FR modulation can be changed. This step may be eliminated if the adhesive force modulation is selective and FR is larger than FD.
  • donor substrate 100 and receiver substrate 200 are moved apart, leaving selected micro devices 102 a, 102 b attached to corresponding selected contact pads 212 a, 212 b, as shown in FIG. 6G .
  • further processing steps can be taken.
  • donor substrate 100 and receiver substrate 200 can be re-aligned and steps can be repeated in order to transfer a different set of micro devices 102 to contact pads 212 .
  • Additional layers can also be deposited on top of or in between micro devices 102 , for example, during the manufacture of a LED display, a transparent electrode layers, fillers, planarization layers and other optical layers can be deposited.
  • One possible additional step, at 1114 is curing adhesive 500 .
  • Curing may create a permanent bond between micro devices 102 and contact pads 212 .
  • curing takes place as part of step 1108 and is part of generating FR. If several sets of selected micro devices 102 are to be transferred to a common receiver substrate 200 curing may be done after all the transfers are complete or after each set is transferred.
  • Adhesive 500 can be applied in many ways.
  • adhesive 500 can be applied to any or all of micro devices 102 , contact pads 212 or receiver substrate 200 . It will often be desirable that an electrical coupling exist between a micro device 102 and its corresponding contact pad 202 .
  • the adhesive may be selected for its conductivity.
  • suitable conductive adhesives are not always available. In any case, but especially when a conductive adhesive is not available, adhesives can be applied near contact pads or may cover only a portion of the contact pad.
  • FIG. 7A shows some other possible arrangements of adhesive on receiver substrate 200 , (I) including four corners, (II) opposite sides, (III) center and (IV) one side geometries.
  • one or more cut-outs can be provided for the adhesive 500 .
  • FIG. 7B shows a contact pad 212 with a cut out (I) before and (II) after application of an adhesive.
  • the adhesive 500 can be stamped, printed or patterned onto the contact pads 212 , micro devices 102 or receiver substrate 200 by any normal lithography techniques.
  • FIG. 8 shows a stamping process that can be used to apply adhesive 500 to, for example, contact pads 212 . Selectivity in generating FR can be achieved by selecting which contact pads 212 will receive adhesive 500 .
  • An analogous procedure can be used to apply adhesive to micro devices 102 or receiver substrate 200 .
  • a stamp with a profile matching the desired distribution of adhesive 500 is wet.
  • the stamp is brought into contact with the receiver substrate 200 and selected micro devices 102 .
  • receiver substrate is now wet with adhesive and ready to receive transfer of selected micro devices 102 .
  • stamps with reverse profiles can also be used.
  • both the micro devices 102 and contact pads 212 may be wet with adhesive.
  • Adhesive 500 may be selected so that it will cure when heat is applied. Any of the techniques described with regard to heating can be suitably applied by one of skill in the art, according to the needs of a specific application.
  • FR is generated by mechanical force.
  • the FR is modulated by application of mechanical forces between the landing area on the receiver substrate and the micro device.
  • This method can be used in combination with weakening the donor force selectively or globally and is compatible with any of the methods 1000 A, 1000 B, and 1000 C or any combination of them. Although, the following description is based on 1000 A similar approaches can be used for 1000 B, 1000 C and the combination of the methods.
  • the order of donor force weakening step 1210 can be changed in reference to other steps without affecting the results.
  • differential thermal expansion or pressure force can be used to achieve a friction fit that will hold micro devices 102 to contact pads 202 .
  • FIG. 9 shows a flowchart of method 1200 , a modified version of method 1000 A suitable for mechanical generation of FR.
  • FIG. 10 shows a donor substrate 100 and a receiver substrate 200 setup to perform method 1200 .
  • Donor substrate 100 is shown in cross section and receiver substrate 200 is shown in cross section and plan view.
  • Donor substrate 100 has an array of micro devices 102 attached.
  • Donor force FD acts to hold micro devices 102 to donor substrate 100 .
  • Micro devices 102 and donor substrate 100 are shown as connected to ground 244 .
  • Receiver substrate 200 has an array of contact pads 232 attached.
  • the array of contact pads 232 is of the same pitch as the array of micro devices 102 ; i.e., there is one micro device 102 for each contact pad 232 .
  • Method 1200 will be described with reference to FIGS. 11A-11E .
  • the substrates are prepared for mechanical force modulation.
  • the grip is opened by different means.
  • heat is applied to force modulation element 222 which can be the same a contact pad on the landing area.
  • mechanical grip and contact pads are used interchangeably.
  • the heat can be applied globally or selectively using heaters 304 causing the grip to open, as shown by the double arrows in FIG. 11A .
  • contact pads 222 are constructed with a central depression 224 and peripheral walls 226 .
  • a combination of selective heaters 304 and global heater 306 or a combination of selective heaters 304 and an environmental heat source or external heat source in combination or alone could also be used.
  • donor substrate 100 and receiver substrate are aligned so that selected micro devices 102 a, 102 b are in line with corresponding contact pads 222 a, 222 b, as shown in FIG. 11B .
  • donor substrate 100 and receiver substrate 200 are moved together until the selected micro devices 102 a, 102 b fit into the space defined by the peripheral walls of corresponding mechanical grip as shown in FIG. 11B .
  • each contact pad 222 is constructed with a central depression 224 and peripheral walls 226 . These features of contact pads 222 are sized so as to fit snugly around a micro device 102 .
  • the material of the mechanical grips is chosen, in part, due to thermal properties; specifically so that the mechanical grips have a higher coefficient of thermal expansion than micro devices 102 .
  • a receiver force is generated.
  • FR is generated by selectively cooling contact pads 222 corresponding to selected micro devices 102 , causing peripheral walls 226 to contract around selected micro devices 102 , closing gap 228 and exerting a compressive force on micro device 102 , holding it in place, as shown in FIG. 11C .
  • Selectivity can be achieved by selectively turning off selective heaters 304 .
  • donor force FD is selectively (or globally) weakened for selected micro devices 102 a, 102 b, so that FD′ is less than FR, as shown in FIG. 11D . This may be done, for example, using laser lift off techniques, lapping or wet/dry etching. In some embodiments FD is weaker than FR, in which case selective weakening of FD is not required. This step may be eliminated if the mechanical force modulation is selective and the FR is larger than FD.
  • donor substrate 100 and receiver substrate 200 are moved apart, leaving selected micro devices 102 a, 102 b attached to corresponding contact pads 222 a, 222 b, as shown in FIG. 11E .
  • donor substrate 100 and receiver substrate 200 can be re-aligned and steps can be repeated in order to transfer a different set of micro devices 102 and to contact pads 222 .
  • Additional layers can also be deposited on top of or in between micro devices 102 , for example, during the manufacture of a LED display, transparent electrode layers, fillers, planarization layers and other optical layers can be deposited.
  • FR is generated by an electrostatic force or magnetic force.
  • magnetic force a current passes through a conductive layer instead of charging a conductive layer for electrostatic force.
  • the structures here are used to describe the electrostatic force similar structures can be used for magnetic force.
  • the FR is modulated by application of selective electrostatic forces between the landing area on the receiver substrate and the micro device.
  • This method can be used in combination with weakening the donor force selectively or globally and is compatible with any of the methods 1000 A, 1000 B, and 1000 C or any combination of them.
  • the following description is based on 1000 A similar approaches can be used for 1000 B, 1000 C and the combination of the methods.
  • the order of donor force weakening step 1410 can be changed in reference to other steps without affecting the results.
  • FR is generated by an electrostatic force.
  • the FR is modulated by application of selective electrostatic forces between the landing area on the receiver substrate and the micro device.
  • This method can be used in combination with weakening the donor force selectively or globally and is compatible with any of the methods 1000 A, 1000 B, and 1000 C or any combination of them. Although, the following description is based on 1000 A similar approaches can be used for 1000 B, 1000 C and the combination of the methods.
  • the order of donor force weakening step 1410 can be changed in reference to other steps without affecting the results.
  • FIG. 12A shows a flowchart of method 1300 , a modified version of method 1000 suitable for electrostatic generation of FR.
  • FIG. 12B shows a donor substrate 100 and a receiver substrate 200 setup to perform method 1300 .
  • Donor substrate 100 is shown in cross section and receiver substrate 200 is shown in cross section and in plan view.
  • Donor substrate 100 has an array of micro devices 102 attached.
  • Donor force FD acts to hold micro devices 102 to donor substrate 100 .
  • Micro devices 102 and donor substrate 100 are shown as connected to ground 244 .
  • the landing area on the receiver substrate 200 has at least a contact pad 232 attached and a force modulation element 234 .
  • Electrostatic layer 234 has a dielectric portion 236 and a conductive portion 238 .
  • Dielectric portion 236 comprises a material selected, in part, for its dielectric properties, including dielectric constant, dielectric leakage and breakdown voltage.
  • the dielectric portion can also be part of the micro device or a combination of the receiver substrate and the micro device. Suitable materials may include SiN, SiON, SiO, HfO and various polymers.
  • Conductive portion 238 is selected, in part, for its conductive properties.
  • Each conductive portion 238 is coupled to a voltage source 240 , via a switch 242 .
  • conductive portions 238 are shown as connected in parallel to a single voltage source 240 via simple switches 242 , this is to be understood as an illustrative example. Conductive portions 238 might be connected to one voltage source 240 in parallel. Different subsets of conductive portions 238 may be connected to different voltage sources. Simple switches 242 can be replaced with more complex arrangements.
  • the desired functionality is the ability to selectively connect a voltage source 240 , having a potential different than that of the micro devices 102 , to selected conductive portions 238 when needed to cause an electrostatic attraction between the selected conductive portions 238 and corresponding selected micro devices 102 .
  • Method 1300 will be explained in conjunction with FIGS. 13A-13E .
  • donor substrate 100 and receiver substrate are aligned so that selected micro devices 102 a, 102 b are in line with corresponding contact pads 232 a, 232 b, as shown in FIG. 13A .
  • donor substrate 100 and receiver substrate 200 are moved together until the micro devices 102 come into contact with contact pads 232 , as shown is FIG. 13B .
  • a receiver force is generated, as shown in FIG. 13C .
  • FR is generated by closing switches 242 a, 242 b that connect conductive portions 238 of electrostatic layers 234 to voltage source 240 creating charged conductive portions 238 at the potential of voltage source 240 .
  • Selected micro devices 102 a, 102 b being at a different potential, e.g. ground potential (or other relative potential), will be electrostatically attracted to conductive portions 238 .
  • the electrostatic charge can be generated by different potential levels. For example, for a 300 nm dielectric, to get a proper grip on a micro device, a voltage difference between 20 V to 50 6V may need to be applied to the electrostatic force element. However, this voltage can be modified depending on the device, gap size, and the dielectric constant.
  • donor force FD is selectively weakened for selected micro devices 102 a, 102 b, so that FD′ is less than FR, as shown in FIG. 13D . This may be done, for example, using laser lift off techniques, lapping or wet/dry etching.
  • donor substrate 100 and receiver substrate 200 are moved apart, leaving selected micro devices 102 a, 102 b attached to corresponding contact pads 232 a, 232 b, as shown in FIG. 13E .
  • further processing steps can be taken and the ground 244 may be removed.
  • donor substrate 100 and receiver substrate 200 can be re-aligned and steps can be repeated in order to transfer a different set of micro devices 102 and to contact pads 232 .
  • Additional layers can also be deposited on top of or in between micro devices 102 , for example, during the manufacture of a LED display, transparent electrode layers, fillers, planarization layers and other optical layers can be deposited.
  • FR will cease to operate if the connection to voltage source 240 is removed. Accordingly, further processing steps to create a permanent bond between micro devices 102 and contact pads 232 are desirable. Curing contact pads 232 , as described above, is a suitable further processing step that will create such a bond and enable further working or transporting receiver substrate 200 .
  • electrostatic layer 234 can take on other configurations.
  • FIG. 14 shows some alternative placements for electrostatic layer 234 . Possible alternative placements of electrostatic layer 234 relative to each contact pad 232 include: (A) four corners, (B) opposite sides, (C) center and (D) one side. Those of skill in the art will now be able to design a configuration suitable to particular applications.
  • FIG. 15 illustrates some possible alternative geometries.
  • FIG. 15A shows an embodiment where electrostatic layer 234 extends above the top of contact pad 232 to form a hollow 240 and micro device 102 has a mesa 242 that will fit within hollow 240 .
  • FIG. 15B shows an embodiment where electrostatic layer 234 extends above the top of contact pad 232 to form a hollow 240 and micro device 102 has an extension 244 attached to it that will fit within hollow 240 .
  • Extension 240 may be made of the same material as contact pad 232 so that later curing will fuse extension 244 and contact pad 232 .
  • Sloping geometries as shown in FIG. 15E , are also possible. Geometries with mesa 242 or extension 244 can help guide micro devices 102 into contact pads 232 and insure a proper fit and prevent tilting of micro devices 102 when detaching from donor substrate 100 . Preferably, the geometry of micro devices 102 and contact pads 232 are chosen to match so as to maximize the electrostatic force.
  • FIG. 15C shows an embodiment where electrostatic layer 234 forms a hollow 240 , but conductive portion 238 remains in the same plane as contact pad 232 .
  • FIG. 15D shows an embodiment where electrostatic layer 234 forms a hollow 240 , but also overlaps with contact pad 232 and conductive portion 238 is in a different plane than contact pad 232 , allowing the fine tuning of the electrostatic force.
  • the force on the donor substrate is modulated to push the device toward the receiver substrate.
  • other forces such as electrostatic forces can be used to push the device toward the receiver substrate.
  • a sacrificial layer can be used to create a push force in presence of heat or light sources.
  • a shadow mask can be used for applying a light source (e.g. laser) to the selected micro devices.
  • the FR can be generated by one of aforementioned methods (e.g., mechanical, heating, adhesive, electrostatic).
  • the FR can be modulated by application of selective electrostatic forces between landing area on the receiver substrate and the micro device.
  • This method is compatible with any of the methods 1000 A, 1000 B, and 1000 C or any combination of them. Although, the following description is based on 1000 A, similar approaches can be used for 1000 B, 1000 C and the combination of the methods.
  • the order of donor force modulation step 1410 can be changed in reference to other steps without affecting the results. However, the most reliable results can be achieved by applying the FR first and then applying the push force to the micro device.
  • FIG. 16 shows a flowchart of method 1400 based on electrostatic FR.
  • Method 1400 is a modified version of method 1300 and is particularly suited to simultaneous transfer of micro devices 102 of different heights.
  • donor substrate 100 and receiver substrate are aligned so that selected micro devices 102 a, 102 b are in line with corresponding contact pads 232 a, 232 b, as shown in FIG. 17A .
  • micro device 102 a is of a different height than micro device 102 b.
  • donor substrate 100 and receiver substrate 200 are moved together until the micro devices 102 are close enough for electrostatic FR to act on micro devices 102 .
  • Donor substrate 100 and receiver substrate 200 may be held so that no micro devices 102 make contact with contact pads 232 or, as shown in FIG. 17B , substrates 100 , 200 may stop approaching when some micro devices 102 make contact with contact pads 232 .
  • a receiver force is generated, as shown in FIG. 17C .
  • FR is generated by closing switches 242 a, 242 b that connect conductive portions 238 of electrostatic layers 234 to voltage source 240 creating charged conductive portions 238 at the potential of voltage source 240 .
  • Selected micro devices 102 a, 102 b being at a different potential, e.g. ground potential, will be electrostatically attracted to conductive portions 238 .
  • donor force FD is selectively weakened for selected micro devices 102 a, 102 b, so that FD′ is less than FR. This may be done, for example, using laser lift off techniques, lapping or wet/dry etching. At this point, micro devices 102 a, 102 b will detach from donor substrate 100 . Micro device 102 b will jump the gap to their corresponding contact pads 232 a, 232 b on receiver substrate 200 .
  • donor substrate 100 and receiver substrate 200 are moved apart, leaving selected micro devices 102 a, 102 b attached to corresponding contact pads 232 a, 232 b, as shown in FIG. 17E .
  • further processing steps can be taken.
  • donor substrate 100 and receiver substrate 200 can be re-aligned and steps can be repeated in order to transfer a different set of micro devices 102 and to contact pads 232 .
  • Additional layers can also be deposited on top of or in between micro devices 102 , for example, during the manufacture of a LED display, transparent electrode layers, fillers, planarization layers and other optical layers can be deposited.
  • FR will cease to operate if the connection to voltage source 240 is removed. Accordingly, further processing steps to create a permanent bond between micro devices 102 and contact pads 232 are desirable. Curing contact pads 232 , as described above, is a suitable further processing step that will create such a bond and enable further working or transporting receiver substrate 200 .
  • An LED display consists of RGB (or other pixel patterning) pixels made of individual color LEDs (such as red, green or blue or any other color).
  • the LEDs are manufactured separately and then transferred to a backplane.
  • the backplane circuit actively or passively drives these LEDs.
  • each sub-pixel is driven by a transistor circuit by either controlling the current, the ON time, or both.
  • each sub-pixel can be addressed by selecting the respective row and column and is driven by an external driving force.
  • the LEDs conventionally are manufactured in the form of single color LEDs on a wafer and patterned to individual micro-devices by different process such as etching.
  • a method is required to selectively transfer them from their substrate to the backplane.
  • the LEDs' pitch on their substrate is the minimum possible to increase the LED manufacturing yield on a wafer, while the LED pitch on the backplane is dictated by the display size and resolution.
  • the force between LED devices and substrate is reduced either by laser, backplane etching, or other methods.
  • the process can selectively weaken the connection force between selected LEDs for transfer and the LED substrate or it can be applied to all the devices to reduce the connection force of all the LED devices to the LED substrate. In one embodiment, this is accomplished by transferring all LEDs from their native substrate to a temporary substrate.
  • the temporary substrate is attached to the LEDs from the top side, and then the first substrate is removed either by polishing and/or etching or laser lift off.
  • the force between the temporary substrate and the LED devices is weaker than the force that the system substrate can selectively apply to the LEDs.
  • a buffer layer may be deposited on the temporary substrate first. This buffer layer can be a polyamide layer. If the buffer layer is not conductive, to enable testing the devices after transfer to the temporary and system substrate, an electrode before or after the buffer layer will be deposited and patterned. If the electrode is deposited before the buffer layer, the buffer layer maybe patterned to create an opening for contact.
  • the LED connection-force modulation happens after the LED substrate and the backplane substrate are in contact and the system substrate forces to LED are selectively modulated by the aforementioned methods presented here.
  • the LED substrate force modulation can be done prior to the backplane substrate force modulation as well.
  • a post processing step may be needed to increase the connection reliability to the backplane substrate.
  • high temperature and/or pressure can be used).
  • a flat surface is used to apply pressure to the LEDs while the temperature is increased. The pressure increases gradually to avoid cracking or dislocation of the LED devices.
  • the selective force of the backplane substrate can stay active during this process to assist the bonding.
  • the two connections required for the LED are on the transfer side and the LED is in full contact with the backplane after the transfer process.
  • a top electrode will be deposited and patterned if needed.
  • a polarization layer can be used before depositing the electrode.
  • a layer of polyamide can be coated on the backplane substrate. After the deposition, the layer can be patterned to create an opening for connecting the top electrode layer to system substrate contacts. The contacts can be separated for each LED or shared.
  • optical enhancement layers can be deposited as well before or after top electrode deposition.
  • Identifying defective micro devices and also characterizing the micro devices after being transferred is an essential part of developing a high yield system since it can enable the use of repair and compensation techniques.
  • the receiver substrate is put in test mode during a transfer process. If needed, the donor substrate may be biased for test mode. If the micro device is an optoelectronic device, a sensor 1810 (or sensor array) is used to extract the optical characteristics of the transferred devices. Here, the receiver substrate is biased so that only the selected device 1802 is activated through selected contact pads 1804 . Also, unselected devices 1806 stay deactivated and unselected pads 1808 stay inactive to prevent any interference. For connectivity testing, the micro device is biased to be active (for the LED case, it emits light). If a micro device is not active, the device can be flagged as defective. In another test, the micro device is biased to be inactive (for the LED case, it does not emit light).
  • FIG. 19 shows an example of a pixel biasing condition for activating or deactivating a micro device.
  • the micro device 1906 is coupled 1908 to a bias voltage 1910 (supply voltage) to become activated.
  • the donor substrate 1900 can be biased for enabling the test.
  • the micro devices are tested during post processing. While a surface is used to apply pressure to the devices to create permanent bonding, the circuit is biased to activate the micro devices. The surface can be conductive so that it can act as another electrode of the micro devices (if needed). The pressure can be adjusted if a device is not active to improve any malfunction in the connection to the receiver substrate. Similar testing can be performed to test for open defective devices. For performance testing, the micro device is biased with different levels and its performance (for the LED case, its output light and color point) is measured.
  • the defective devices are replaced or fixed before applying any post processing to permanently bond the device into receiver substrate.
  • the defective devices can be removed before replacing it with a working device.
  • the landing area on the receiver substrate corresponding to the micro devices comprises at least a contact pad and at least a force modulation element.
  • the net transfer forces are modulated by weakening the donor force using laser lift off. In another embodiment, the net transfer forces are modulated by weakening the donor force using selectively heating the area of the donor substrate near each of the selected micro devices. In another embodiment, the net transfer forces are modulated by selectively applying adhesive layer to the micro devices. In another embodiment, a molding device is used to apply the adhesive layer selectively. In another embodiment, printing is used to apply the adhesive layer selectively. In another embodiment, a post process is performed on the receiver substrate so that the contact pads permanently bond with the selected micro devices. In another embodiment, the post process comprises heating the receiver substrate. In another embodiment, the heating is done by passing a current through the contact pads.
  • the method is repeated using at least one additional set of selected micro devices and corresponding contact pads.
  • the contact pads are located inside an indentation in the receiver substrate and each selected micro device fits into one such indentation.
  • the pitch of the array of micro devices is the same as the pitch of the array of contact pads.
  • the pitch of the array of micro devices is proportional to the pitch of the array of contact pads.
  • each of the selected micro devices comprises a protrusion and the contact pads comprise a depression sized to match the protrusion on each micro device.
  • the net transfer forces are modulated by generating electrostatic attraction between the selected micro devices and the receiver substrate.
  • the electrostatic forces are applied to the entire array of micro devices on the donor substrate by a force element on the receiver substrate or behind the receiver substrate.
  • the electrostatic forces are generated selectively by the force modulation element of the landing area.
  • the force modulation element of the landing area on the receiver substrate comprises a conductive element near each contact pad, each conductive element capable of being linked to a voltage source in order to sustain an electrostatic charge.
  • each conductive element comprises one or more sub-elements.
  • the sub-elements are distributed around the contact pad.
  • each conductive element surrounds a contact pad.
  • the force modulation element of the landing area on the receiver substrate comprises a conductive layer and a dielectric layer throughout a substantial portion of the landing area, the conductive layer capable of being linked to a voltage source in order to sustain an electrostatic charge.
  • the donor substrate and the receiver substrate are brought close together, but the selected micro devices and the contact pads do not touch until after the net transfer forces are modulated whereupon the selected micro devices move across the small gap to the contact pads.
  • the height of the selected micro devices differ.
  • the contact pads are concave.
  • the force modulation element of the receiver substrate generates a mechanical clamping force.
  • the mechanical force modulation element forms part of at least one contact pad.
  • the mechanical force modulation elements are separate from the contact pad.
  • the mechanical force modulation is created by thermal expansion or compression of at least one of the force modulation element or micro device.
  • each contact pad has a concave portion and each selected micro device is inserted into a concave portion of a contact pad.
  • the receiver substrate is heated before the donor substrate and the receiver substrate are moved together so that the concave portion of the contact pads expands to be larger than a selected micro device and the receiver substrate is cooled before the donor substrate and the receiver substrate are moved apart so that the concave portion of the contact pads contracts around the selected micro devices and provides the receiver force via mechanical clamping of the selected micro devices.
  • the force modulation element in the landing area of the receiver substrate is an adhesive layer positioned between the selected micro devices and the receiver substrate.
  • the adhesive layer is conductive.
  • a portion of each of the contact pads on the receiver substrate is coated with an adhesive layer.
  • a portion of each of the selected micro devices is coated with an adhesive layer.
  • a portion of the area near the contact pads is coated with an adhesive layer.
  • the net transfer force is modulated both on the donor substrate with at least one of the aforementioned methods and on the receiver substrate with at least one of the described methods.

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US15/002,662 2015-01-23 2016-01-21 Selective micro device transfer to receiver substrate Abandoned US20160219702A1 (en)

Priority Applications (17)

Application Number Priority Date Filing Date Title
US15/060,942 US10134803B2 (en) 2015-01-23 2016-03-04 Micro device integration into system substrate
US15/442,293 US20170215280A1 (en) 2016-01-21 2017-02-24 Selective transfer of micro devices
US15/653,120 US10700120B2 (en) 2015-01-23 2017-07-18 Micro device integration into system substrate
PCT/IB2018/055347 WO2019016730A1 (en) 2015-01-23 2018-07-18 MICRO-DEVICE INTEGRATION IN A SYSTEM SUBSTRATE
US16/107,680 US20180358404A1 (en) 2015-01-23 2018-08-21 Micro device integration into system substrate
US16/107,692 US10847571B2 (en) 2015-01-23 2018-08-21 Micro device integration into system substrate
US16/912,049 US11735623B2 (en) 2015-01-23 2020-06-25 Micro device integration into system substrate
US16/931,132 US11728302B2 (en) 2015-01-23 2020-07-16 Selective micro device transfer to receiver substrate
US17/200,467 US20210202572A1 (en) 2015-01-23 2021-03-12 Micro device integration into system substrate
US17/222,506 US20210243894A1 (en) 2016-01-21 2021-04-05 Selective transfer of micro devices
US17/365,634 US11735545B2 (en) 2015-01-23 2021-07-01 Selective micro device transfer to receiver substrate
US17/365,708 US11476216B2 (en) 2015-01-23 2021-07-01 Selective micro device transfer to receiver substrate
US17/569,918 US11735547B2 (en) 2015-01-23 2022-01-06 Selective micro device transfer to receiver substrate
US17/569,900 US11735546B2 (en) 2015-01-23 2022-01-06 Selective micro device transfer to receiver substrate
US17/569,893 US11728306B2 (en) 2015-01-23 2022-01-06 Selective micro device transfer to receiver substrate
US17/730,719 US20220254745A1 (en) 2015-01-23 2022-04-27 Selective micro device transfer to receiver substrate
US18/177,613 US20230207611A1 (en) 2015-01-23 2023-03-02 Micro device integration into system substrate

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CA2879465 2015-01-23
CA2879465A CA2879465A1 (en) 2015-01-23 2015-01-23 Integration of semiconductor devices into system substrate
CA2879627 2015-01-23
CA2879627A CA2879627A1 (en) 2015-01-23 2015-01-23 Selective semiconductor device integration into system substrate
CA2880718A CA2880718A1 (en) 2015-01-28 2015-01-28 Selective transfer of semiconductor device to a system substrate
CA2880718 2015-01-28
CA2883914A CA2883914A1 (en) 2015-03-04 2015-03-04 Selective transferring of micro-devices
CA2883914 2015-03-04
CA2887186 2015-04-08
CA2890398 2015-05-04
CA2890398A CA2890398A1 (en) 2015-05-04 2015-05-04 Selective and non-selective micro-device transferring
CA2891027 2015-05-12
CA2891007 2015-05-12
CA2891007 2015-05-12
CA2887186A CA2887186A1 (en) 2015-05-12 2015-05-12 Selective transferring and bonding of pre-fabricated micro-devices
CA2891027 2015-05-12

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US15/442,293 Continuation-In-Part US20170215280A1 (en) 2016-01-21 2017-02-24 Selective transfer of micro devices
US16/931,132 Division US11728302B2 (en) 2015-01-23 2020-07-16 Selective micro device transfer to receiver substrate

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US16/931,132 Active US11728302B2 (en) 2015-01-23 2020-07-16 Selective micro device transfer to receiver substrate
US17/365,708 Active US11476216B2 (en) 2015-01-23 2021-07-01 Selective micro device transfer to receiver substrate
US17/365,634 Active US11735545B2 (en) 2015-01-23 2021-07-01 Selective micro device transfer to receiver substrate
US17/569,918 Active US11735547B2 (en) 2015-01-23 2022-01-06 Selective micro device transfer to receiver substrate
US17/569,893 Active US11728306B2 (en) 2015-01-23 2022-01-06 Selective micro device transfer to receiver substrate
US17/569,900 Active US11735546B2 (en) 2015-01-23 2022-01-06 Selective micro device transfer to receiver substrate
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US17/365,634 Active US11735545B2 (en) 2015-01-23 2021-07-01 Selective micro device transfer to receiver substrate
US17/569,918 Active US11735547B2 (en) 2015-01-23 2022-01-06 Selective micro device transfer to receiver substrate
US17/569,893 Active US11728306B2 (en) 2015-01-23 2022-01-06 Selective micro device transfer to receiver substrate
US17/569,900 Active US11735546B2 (en) 2015-01-23 2022-01-06 Selective micro device transfer to receiver substrate
US17/730,719 Pending US20220254745A1 (en) 2015-01-23 2022-04-27 Selective micro device transfer to receiver substrate

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