CA2883914A1 - Selective transferring of micro-devices - Google Patents

Selective transferring of micro-devices Download PDF

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Publication number
CA2883914A1
CA2883914A1 CA2883914A CA2883914A CA2883914A1 CA 2883914 A1 CA2883914 A1 CA 2883914A1 CA 2883914 A CA2883914 A CA 2883914A CA 2883914 A CA2883914 A CA 2883914A CA 2883914 A1 CA2883914 A1 CA 2883914A1
Authority
CA
Canada
Prior art keywords
micro
pixel
sub
substrate
micro device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2883914A
Other languages
French (fr)
Inventor
Gholamreza Chaji
Ehsanallah Fathi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ignis Innovation Inc
Original Assignee
Ignis Innovation Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ignis Innovation Inc filed Critical Ignis Innovation Inc
Priority to CA2883914A priority Critical patent/CA2883914A1/en
Priority to US15/002,662 priority patent/US20160219702A1/en
Priority to DE112016000447.8T priority patent/DE112016000447T5/en
Priority to PCT/IB2016/050307 priority patent/WO2016116889A1/en
Priority to CN201680006964.4A priority patent/CN107851586B/en
Priority to CN202110684431.4A priority patent/CN113410146A/en
Priority to US15/060,942 priority patent/US10134803B2/en
Publication of CA2883914A1 publication Critical patent/CA2883914A1/en
Priority to CN202310495809.5A priority patent/CN116525532A/en
Priority to CN201780013977.9A priority patent/CN109075119B/en
Priority to US15/653,120 priority patent/US10700120B2/en
Priority to DE112018003713.4T priority patent/DE112018003713T5/en
Priority to CN201880047604.8A priority patent/CN110892530A/en
Priority to PCT/IB2018/055347 priority patent/WO2019016730A1/en
Priority to KR1020207004053A priority patent/KR20200035048A/en
Priority to US16/107,680 priority patent/US20180358404A1/en
Priority to US16/107,692 priority patent/US10847571B2/en
Priority to US16/912,049 priority patent/US11735623B2/en
Priority to US16/931,132 priority patent/US11728302B2/en
Priority to US17/200,467 priority patent/US20210202572A1/en
Priority to US17/365,634 priority patent/US11735545B2/en
Priority to US17/365,708 priority patent/US11476216B2/en
Priority to US17/569,900 priority patent/US11735546B2/en
Priority to US17/569,918 priority patent/US11735547B2/en
Priority to US17/569,893 priority patent/US11728306B2/en
Priority to US17/730,719 priority patent/US20220254745A1/en
Priority to US18/177,613 priority patent/US20230207611A1/en
Abandoned legal-status Critical Current

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Classifications

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Abstract

Post-processing steps for integrating of micro devices into system (receiver) substrate or improving the performance of the micro devices after transfer. Post processing steps for additional structures such as reflective layers, fillers, black matrix or other layers may be used to improve the out coupling or confining of the generated LED light. Dielectric and metallic layers may be used to integrate an electro-optical thin film device into the system substrate with transferred micro devices. Color conversion layers may be integrated into the system substrate to create different outputs from the micro devices.

Description

Selective transferring and bonding of pre-fabricated micro-devices Introduction Selective transferring and bonding of pre-fabricated micro-devices from the donor substrate to a system substrate containing backend circuitry allows us to develop more efficient integration schemes for optical and electronic systems such as display and LED light panels.
In one embodiment, the donor substrate consists of an array of pre-fabricated micro-devices and the system substrate is a substrate with an array of contact pads.
Figure 1: An array of pre-fabricated micro-devices and the array of contact pads on the system substrate.
To transfer some of the micro-devices from donor substrate to the system substrate, first they are aligned and brought together. Using some mechanisms, contact pads apply a force of F' on all micro-devices attached to the donor substrate. This force may have different sources such as electrostatic, magnetic or adhesion (mechanical, chemical,..). Subsequently, using an operation such as laser lift-off (LL0), the sticking force that holds micro-devices to the donor substrate is manipulated. This manipulation is selective so that it may change the adhesion of individual or a group of micro devices. As Figure 3 shows the net force inserted on the micro-devices is the difference between F, (i=1,2,3..) and the F' (Fnet = F - F,). Micro-devices with positive Fnet will be detached and transferred to the system (system) substrate.

-1:1-1 11-1 iI
* # * # # *
F' F, F F, F' F' Figure 2: Pre-fabricated micro-devices and the array of contact pads are aligned and brought together. Force F' is applied to the micro-device arrays.
After transferring the selected micro-devices to the system substrate, an operation is performed to create a phase change in the contact pad bonding layer and the micro-device electrode to permanently bond the micro-device to the system substrate. While this operation is performed, force F' holds the micro-devices on the system contact pads. A variety of operations can be performed to control the phase of the bonding layer such as using a global heater.

A A A
L......1 1......J 1,...I
-1-1-' i __ II 1----7----1 i---1---1 !
* * * # # *
F' F' r F' F' r Figure 3: Micro-devices with net force (F'-Fi) >0 are transferred to the system substrate.
In one embodiment, force F' applied to the micro-devices from the contact pads on the system substrate can be designed to be different for the individual or a group of contact pads. As it is shown in Figure 3, in this case the net force inserted on the micro-device "i" is F, =
F', - F. Micro-devices with Fnet > 0 will be transferred to the system after emoving the donor substrate.

* A A A A A
i-I-1;
Y * * V 4' t , ,_ , r_ r_ , i_. , F1 r2 r3 F4 r5 r6 Figure 4: Pre-fabricated micro-devices and the array of contact pads are aligned and brought together. Force F1' is applied to the micro-devices and can be different for individual or a group of contact pads.

A A A
....1 -I1- 1-11 :
-. __________________ , , : !
.
* * * * * *
. . , . , F1 F2 F3 F4 F5 F6, Figure 5: Micro-devices with net force (FV-Fi) >0 are transferred to the system substrate.
Following scheme describes exemplary implementations of contact pads on the system substrate. As mentioned before, this invention describes a method of selective transferring and bonding an array of micro-devices to a system substrate. In one aspect, the system substrate can have any sizes and may contain the necessary circuitry to derive the micro-devices or process the output signal of micro-devices.
In another embodiment the substrates consist of connection pads and metallic tracks. In both cases, the pads equipped with a mechanism to electrostatically hold the micro-devices during the transfer from the system substrate to the system substrate. As an example, the micro-devices can be micro LED
devices and the substrate, the back-plane driver circuitry.
Selective transfer of semiconductor devices using electrostatic force In this invention, there is at least one conductive area in vicinity of the pads sharing the same micro-device which is covered by a dielectric. This area provides electro static forces required to hold the micro device in place on the system substrate. This area can have different shapes, different sections, and different heights.
In one aspect, the system substrate has an array of contact pads as shown in Figure 6.
Figure 6: Array of pads on the system substrate. Contact pads are surrounded by a ring of metal/dielectric bi-layer.
In this case, each contact pad is surrounded by a ring of metal/dielectric bi-layer. The metallic layer of these rings can be addressed separately or connected together and controlled by one signal.
, Figure 7: Cross section of the contact pads.
In this scheme, micro-devices are aligned with the contact pads and they are brought in contact with them (Figure 3) L111111111=1.11 Figure 8: First micro-devices and the contact pads are aligned and brought together.
Different micro-devices can be selected for bonding by applying a voltage to the bonding pads (here the metallic ring). The electro-static force produced by the voltage across the dielectric can temporary holds the micro-devices in contact with the contact pads (Figure 4).
Figure 9: a voltage is applied to the bonding pads (here the metallic ring) to temporary holds the micro-device in contact with the contact pads.
Later on, using some operations such as laser lift-off or heating, the force holding the micro-devices to the carrier substrate is manipulated. This manipulation leads to a net force toward the system (system) substrate and transferring the selected micro-devices upon removing the carrier substrate.

Figure 10: Array of pads on the system substrate. Each contact pad consists of a metallic electrode and a metal/dielectric stack part.
In another embodiment shown in Figure 10, each contact pad consists of a metallic electrode and a metal/dielectric bilayer section.
In another embodiment shown in Figure 11, each contact pad in the array consist of a metallic electrode (in the form of a symmetric cross) and four square metal/dielectric stack at the edges of the contact pad.

ILI P -Figure 11: Array of pads on the system substrate. Each contact pad consists of a metallic electrode and four metal/dielectric stack sections at for edges of the contact pad.

In this embodiment, the four metal/dielectric bilayers in a single contact pad can be connected together or one or more of them can be addressed separately. Similarly to the embodiments in Figure 6 and Figure 10, metal/dielectric bilayers, here is called bonding pads, for a single contact pad can be addressed separately or connected to the bonding pads of other contact pads and be addressed collectively.
In general, a variety of different electrode and bonding pad can be designed and the scope of the invention is not limited to the above arrangements.
Selective transfer of semiconductor devices using mechanical force In another aspect of the invention shown in Figure 12, the electrode pads on the system substrate can be patterned to form a trench structure.
Figure 12: Trench pattern on the system electrode pads. Micro-devices on the carrier substrate are aligned and brought close to the electrode pads on the system substrate.
First, micro-device arrays are aligned with the pads on the system substrate.
Considering the larger size of the trenches, micro-devices can be accurately placed into them (see Figure 13). The material of the system substrate electrode is chosen to have a temperature expansion coefficient (CTE) lower than that of the micro-device electrode. Consequently, heating up this setup, result in a larger expansion of the micro-device electrodes compared to the trench structures. This will cause a temporary mechanical bonding between the micro-device arrays and the system substrate. Later on, using some methods like laser lift-off, the force holding micro-devices to the carrier substrate can selectively be decreased. This manipulation leads to a net force toward the system (system) substrate and transferring the selected micro-devices upon removing the carrier substrate (Figure 15).

111.111 Figure 13: Micro-devices are placed into the electrode trenches on the system substrate.
=
, Figure 14: Micro-devices are placed into the electrode trenches on the system substrate.

I ___________ limommil L 1 i L-m-1 1.....ml 11;1 immormil lii 1 ___________ 17 ______________________ r 1 __ r 1 __ r 1 __ r 1 __ E
-u.4 ih441 4; tli:4 44 i4i ii -.;;4 I-ZTI 11-.TII I
7 _____________________ r i=In=l 7 ___ r 7 _____________________________________________________________ r Figure 15: process flow of selective transferring of micro-devices to a system substrate using mechanical grip and laser lift-off process

Claims (14)

WHAT IS CLAIMED IS:
1. A method of integrated device fabrication, the integrated device comprising a plurality pixels each comprising at least one sub-pixel comprising a micro device integrated on a substrate, the method comprising:
extending an active area of a first sub-pixel to an area larger than an area of a first micro device of the first sub-pixel by patterning of a filler layer about the first micro device and between the first micro device and at least one second micro device.
2. A method according to claim 1 further comprising:
fabricating at least one reflective layer covering at least a portion of one side of the patterned filler layer, the reflective layer for confining at least a portion of incoming or outgoing light within the active area of the sub-pixel.
3. A method according to claim 2 wherein the reflective layer is fabricated as an electrode of the micro device.
4. A method according to claim 1 wherein the patterning of the filler layer further patterns the filler layer about a further sub-pixel.
5. A method according to claim 1 wherein the patterning of the filler layer further is performed with a dielectric filler material.
6. An integrated device comprising:
a plurality pixels each comprising at least one sub-pixel comprising a micro device integrated on a substrate; and a patterned filler layer formed about a first micro device of a first sub-pixel and between the first micro device and at least one second micro device, the patterned filler layer extending an active area of the first sub-pixel to an area larger than an area of the first micro device.
7. An integrated device according to claim 6 further comprising:
at least one reflective layer covering at least a portion of one side of the patterned filler layer, the reflective layer for confining at least a portion of incoming or outgoing light to the active area of the first sub-pixel.
8. An integrated device according to claim 7 wherein the reflective layer is an electrode of the micro device.
9. An integrated device according to claim 7 wherein the patterned filler layer is formed about a further sub-pixel.
10. A method of integrated device fabrication, the device comprising a plurality pixels each comprising at least one sub-pixel comprising a micro device integrated on a substrate, the method comprising:
integrating at least one micro device into a receiver substrate; and subsequently to the integration of the at least one micro device, integrating at least one thin-film electro-optical device into the receiver substrate.
11. A method according to claim 10, wherein integrating the at least one thin-film electro-optical device comprises forming an optical path for the micro device through all or some layers of the at least one electro-optical device.
12. A method according to claim 10 wherein integrating the at least one thin-film electro-optical device is such that an optical path for the micro device is through a surface or area of the integrated device other than a surface or area of the electro-optical device.
13. A method according to claim 10, further comprising fabricating an electrode of the thin-film electro-optical device, the electrode of the thin-film electro-optical device defining an active area of at least one of a pixel and a sub-pixel.
14.
A method of according to claim 10, further comprising fabricating an electrode which serves as a shared electrode of both the thin-film electro-optical device and the light emitting micro device.
CA2883914A 2015-01-23 2015-03-04 Selective transferring of micro-devices Abandoned CA2883914A1 (en)

Priority Applications (26)

Application Number Priority Date Filing Date Title
CA2883914A CA2883914A1 (en) 2015-03-04 2015-03-04 Selective transferring of micro-devices
US15/002,662 US20160219702A1 (en) 2015-01-23 2016-01-21 Selective micro device transfer to receiver substrate
DE112016000447.8T DE112016000447T5 (en) 2015-01-23 2016-01-21 Selective micro-device transfer to a receptor substrate
PCT/IB2016/050307 WO2016116889A1 (en) 2015-01-23 2016-01-21 Selective micro device transfer to receiver substrate
CN201680006964.4A CN107851586B (en) 2015-01-23 2016-01-21 Selective micro device transfer to a receptor substrate
CN202110684431.4A CN113410146A (en) 2015-01-23 2016-01-21 Selective micro device transfer to a receptor substrate
US15/060,942 US10134803B2 (en) 2015-01-23 2016-03-04 Micro device integration into system substrate
CN202310495809.5A CN116525532A (en) 2015-01-23 2017-03-06 Integrated device manufacturing method
CN201780013977.9A CN109075119B (en) 2015-01-23 2017-03-06 Integrated device manufacturing method
US15/653,120 US10700120B2 (en) 2015-01-23 2017-07-18 Micro device integration into system substrate
KR1020207004053A KR20200035048A (en) 2015-01-23 2018-07-18 Micro device integration into the system board
PCT/IB2018/055347 WO2019016730A1 (en) 2015-01-23 2018-07-18 Micro device integration into system substrate
CN201880047604.8A CN110892530A (en) 2015-01-23 2018-07-18 Micro device integration into system substrate
DE112018003713.4T DE112018003713T5 (en) 2015-01-23 2018-07-18 MICRO DEVICE INTEGRATION IN SYSTEM SUBSTRATE
US16/107,680 US20180358404A1 (en) 2015-01-23 2018-08-21 Micro device integration into system substrate
US16/107,692 US10847571B2 (en) 2015-01-23 2018-08-21 Micro device integration into system substrate
US16/912,049 US11735623B2 (en) 2015-01-23 2020-06-25 Micro device integration into system substrate
US16/931,132 US11728302B2 (en) 2015-01-23 2020-07-16 Selective micro device transfer to receiver substrate
US17/200,467 US20210202572A1 (en) 2015-01-23 2021-03-12 Micro device integration into system substrate
US17/365,708 US11476216B2 (en) 2015-01-23 2021-07-01 Selective micro device transfer to receiver substrate
US17/365,634 US11735545B2 (en) 2015-01-23 2021-07-01 Selective micro device transfer to receiver substrate
US17/569,900 US11735546B2 (en) 2015-01-23 2022-01-06 Selective micro device transfer to receiver substrate
US17/569,918 US11735547B2 (en) 2015-01-23 2022-01-06 Selective micro device transfer to receiver substrate
US17/569,893 US11728306B2 (en) 2015-01-23 2022-01-06 Selective micro device transfer to receiver substrate
US17/730,719 US20220254745A1 (en) 2015-01-23 2022-04-27 Selective micro device transfer to receiver substrate
US18/177,613 US20230207611A1 (en) 2015-01-23 2023-03-02 Micro device integration into system substrate

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110892530A (en) * 2015-01-23 2020-03-17 维耶尔公司 Micro device integration into system substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110892530A (en) * 2015-01-23 2020-03-17 维耶尔公司 Micro device integration into system substrate

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