US20150300695A1 - Heat conversion member and heat conversion laminate - Google Patents

Heat conversion member and heat conversion laminate Download PDF

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Publication number
US20150300695A1
US20150300695A1 US14/437,570 US201314437570A US2015300695A1 US 20150300695 A1 US20150300695 A1 US 20150300695A1 US 201314437570 A US201314437570 A US 201314437570A US 2015300695 A1 US2015300695 A1 US 2015300695A1
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US
United States
Prior art keywords
heat conversion
conversion member
present
fesi
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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US14/437,570
Other languages
English (en)
Inventor
Norihito Takeuchi
Kazuto Noritake
Toru Sasatani
Takuhito Tsutsui
Yoshiki Okuhara
Seiichi Suda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Industries Corp
Japan Fine Ceramics Center
Original Assignee
Toyota Industries Corp
Japan Fine Ceramics Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Industries Corp, Japan Fine Ceramics Center filed Critical Toyota Industries Corp
Assigned to JAPAN FINE CERAMICS CENTER, KABUSHIKI KAISHA TOYOTA JIDOSHOKKI reassignment JAPAN FINE CERAMICS CENTER ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NORITAKE, KAZUTO, SASATANI, TORU, TAKEUCHI, NORIHITO, TSUTSUI, Takuhito, OKUHARA, YOSHIKI, SUDA, SEIICHI
Publication of US20150300695A1 publication Critical patent/US20150300695A1/en
Abandoned legal-status Critical Current

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S70/00—Details of absorbing elements
    • F24S70/10—Details of absorbing elements characterised by the absorbing material
    • F24S70/12—Details of absorbing elements characterised by the absorbing material made of metallic material
    • F24J2/481—
    • F24J2/484—
    • F24J2/485—
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S70/00—Details of absorbing elements
    • F24S70/10—Details of absorbing elements characterised by the absorbing material
    • F24S70/16—Details of absorbing elements characterised by the absorbing material made of ceramic; made of concrete; made of natural stone
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S70/00—Details of absorbing elements
    • F24S70/20—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption
    • F24S70/225—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption for spectrally selective absorption
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/40—Solar thermal energy, e.g. solar towers

Definitions

  • the present invention relates to a heat conversion member and to a heat conversion laminate.
  • Photovoltaic power generation systems are known that convert sunlight to heat and utilize the heat for electric power generation.
  • sunlight is collected with a collector and the collected sunlight is used to heat a heating medium (such as oil, dissolved salts or molten sodium) in a container or flow channel.
  • a heating medium such as oil, dissolved salts or molten sodium
  • Provision of covering materials, thin-films and the like on the surfaces of containers or flow channels is also being studied as a way of accelerating heating of the heating medium by the collected sunlight.
  • a covering material is provided on the surface of a container or flow channel, and the covering material promotes absorption of collected sunlight while minimizing heat release by heat radiation from the container or flow channel to the exterior.
  • PTL 1 proposes a method for producing a solar heat collector comprising a first glass tube having a vacuum interior and allowing sunlight to impinge from the exterior, and a second glass tube or metal tube provided on the inner side of the first glass tube and having a selective absorbing film on the surface, the selective absorbing film being composed of a metal film that contacts with the second glass tube or metal tube and a dielectric thin-film adhering onto the metal film, wherein the metal film is formed by an electroless plating method selected from among nickel, cobalt, silver and copper plating, and the dielectric thin-film is formed by coating a film by a method of coating a solution of one kind or a mixture selected from among titanium dioxide, tantalum pentoxide and niobium pentoxide, followed by heat treatment of the film
  • PTL 2 proposes a coating composition for the heat-collecting surface of a solar heat collector, comprising a pigment with a high solar absorption rate that is highly permeable to infrared rays, polymethylpentene, and a solvent that dissolves polymethylpentene
  • PTL 3 proposes a solar heat collecting apparatus utilizing sunlight energy, the solar heat collecting apparatus comprising a wavelength converter that absorbs at least a portion of sunlight and converts it to light of a different wavelength, and a heat accumulator that absorbs light emitted from the wavelength converter and generates heat.
  • PTL 4 proposes a sunlight selective absorption coating having a sunlight absorbing property and low emissivity, the sunlight selective absorption coating comprising a support ( 1 ) of a metal, dielectric material or ceramic material, at least one mid-to-far-infrared ray highly-reflecting metal layer ( 2 ) accumulated on the support ( 1 ), a multilayer absorbing structure ( 3 ) composed of an alternating dielectric layer ( 5 ) and metal layer ( 6 ), accumulated on the metal reflective layer ( 2 ), and at least one anti-reflection dielectric layer ( 4 ), accumulated on the multilayer absorbing structure ( 3 ), the dielectric layers ( 5 ) of the multilayer absorbing structure ( 3 ) being either of the same or different thicknesses and/or compositions, the metal layers ( 6 ) of the multilayer absorbing structure ( 3 ) being either of the same or different thicknesses and/or compositions, the respective thicknesses of the metal layers ( 6 ) and dielectric layers ( 5 ) of the multilayer
  • a heat conversion member comprising a composite material of one or more kinds of semiconductor and one or more kinds of metal material.
  • a heat conversion laminate having laminated at least one or more layers including at least the heat conversion member according to (5) or (6), and a metal layer.
  • a heat conversion laminate having laminated at least a metal layer, one or more layers including at least the heat conversion member according to (5) or (6), and a transparent dielectric layer, in that order.
  • a heat conversion member that can efficiently convert light to heat.
  • a heat conversion laminate comprising a heat conversion member that can efficiently convert light to heat.
  • FIG. 1 is a cross-sectional schematic drawing showing a heat conversion laminate 1 as one embodiment of a heat conversion laminate according to the present invention.
  • FIG. 2 is a graph showing the results for the absorption properties of a Ag—FeSi 2 “metasemi” monolayer film.
  • FIG. 3 is a graph showing the results for the absorption properties of a Mo—FeSi 2 “metasemi” monolayer film.
  • FIG. 4 is a graph showing the results for the absorption properties of a Cu—FeSi 2 “metasemi” monolayer film.
  • the heat conversion member of the present invention is a heat conversion member comprising a composite material of one or more kinds of semiconductor and one or more kinds of metal material.
  • the heat conversion member of the present invention allows the absorption property for sunlight to be varied by adjusting the content (addition rate) of the one or more kinds of metal material, thereby allowing efficient conversion of light to heat with improved optical selectivity.
  • optical selectivity refers to dramatic change in the optical characteristics, such as reflectance at certain wavelengths or certain wavelength ranges.
  • the one or more kinds of semiconductor in the composite material in the heat conversion member of the present invention may be of a single kind of semiconductor, or a mixture of two or more different kinds of semiconductor.
  • the one or more kinds of metal material in the composite material in the heat conversion member of the present invention may also be a single kind of metal material or a mixture of two or more different kinds of metal material.
  • the metal material in the composite material in the heat conversion member of the present invention is not particularly restricted and may be an Ag material, Mo material or Cu material, for example.
  • the one or more kinds of metal material in the composite material in the heat conversion member of the present invention may be in any desired form, but is preferably in the form of particles. If the one or more kinds of metal material is in particle form, it may be metallic particles or metal fine particles. The particle diameter of particles of the metal material is preferably 1-100 nm.
  • the heat conversion member of the present invention may be in any desired form, such as in the form of a film shape, tube shape, sheet shape or the like, however a film shape is preferred.
  • the thickness of a film of the heat conversion member of the present invention may be any desired thickness so long as the effect of the present invention is exhibited, however preferably a film of the heat conversion member of the present invention has a thickness of 1 nm to 10 ⁇ m, and more preferably it has a thickness of 5 nm to 100 nm.
  • the content of the one or more kinds of metal material in the heat conversion member of the present invention may be as desired, such as 1-50 vol %, for example.
  • the heat conversion member of the present invention may yet also contain any desired material other than a composite material of the one or more kinds of semiconductor and one or more kinds of metal materials.
  • a transparent dielectric material such as SiO 2 may be mixed in the form of particulates or fine particulates.
  • the heat conversion member of the present invention can be obtained by any desired publicly known production method.
  • the heat conversion member of the present invention can be produced by physical vapor phase deposition (PVD), sputtering or the like.
  • the heat conversion laminate of the present invention has laminated one or more layers comprising a film-like heat conversion member of the present invention, and a metal layer, and it may have a metal layer and one or more layers comprising a film-like heat conversion member of the present invention laminated in that order, or the lamination may be in the reverse order.
  • the heat conversion laminate of the present invention also have at least a metal layer, one or more layers comprising a film-like heat conversion member of the present invention and a transparent dielectric layer, laminated in that order.
  • the one or more layers containing a film-like heat conversion member of the present invention in the heat conversion laminate of the present invention may be constructed as a photoabsorbing layer, and this allows the absorption property for sunlight to be varied by adjusting the content of the one or more kinds of metal material, thereby allowing efficient conversion of light to heat with improved optical selectivity.
  • the thickness of the one or more layers comprising a film-like heat conversion member in the heat conversion laminate of the present invention may be any desired thickness so long as the effect of the present invention is exhibited, and it is preferably a thickness of 5 nm to 100 nm.
  • the layer comprising the film-like heat conversion member in the heat conversion laminate of the present invention may be a single layer or multiple layers.
  • the one or more layers comprising a film-like heat conversion member in the heat conversion laminate of the present invention may also include any materials other than the film-like heat conversion member.
  • the metal layer in the heat conversion laminate of the present invention may be constructed as an infrared anti-reflection layer.
  • the metal layer in the heat conversion laminate of the present invention is not particularly restricted, and for example, it may be a molybdenum (Mo) layer, tungsten (W) layer, silver (Ag) layer, gold (Au) layer, copper (Cu) layer or the like, and is preferably a molybdenum (Mo) layer.
  • the thickness of the metal layer in the heat conversion laminate of the present invention may have any desired thickness so long as the effect of the present invention is exhibited, and it is preferably a thickness of 100 nm or greater.
  • the transparent dielectric layer in the heat conversion laminate of the present invention may also be constructed as an anti-reflection layer.
  • the transparent dielectric layer in the heat conversion laminate of the present invention is not particularly restricted, and examples include a SiO 2 layer, Al 2 O 3 layer, AlN layer or the like, with a SiO 2 layer being preferred.
  • the thickness of the transparent dielectric layer in the heat conversion laminate of the present invention may be any desired thickness so long as the effect of the present invention is exhibited, and it is preferably a thickness of 10 nm to 500 nm.
  • the heat conversion laminate of the present invention may also include an absorbing layer other than a heat conversion member of the present invention, as a photoabsorbing layer.
  • the heat conversion laminate of the present invention can be obtained by any desired publicly known production method.
  • the heat conversion laminate of the present invention can be produced by physical vapor phase deposition (PVD), sputtering or the like.
  • the heat conversion laminate of the present invention will now be explained in greater detail with reference to FIG. 1 .
  • the heat conversion laminate of the present invention is not limited to the embodiment of the present invention shown in FIG. 1 , such as is within the scope of the object and gist of the present invention.
  • FIG. 1 is a drawing showing a heat conversion laminate 1 as one embodiment of a heat conversion laminate according to an embodiment of the present invention.
  • the heat conversion laminate 1 according to an embodiment of the present invention is formed from a transparent dielectric layer 11 , a layer comprising a heat conversion member (photoabsorbing layer) 12 , and a metal layer 13 .
  • the layer comprising a heat conversion member (photoabsorbing layer) 12 comprises metal fine particles 121 and a semiconductor 122 . As shown in FIG. 1 , the metal fine particles 121 are dispersed within the semiconductor 122 .
  • the absorption properties of a heat conversion member of the present invention were evaluated using an Ag—FeSi 2 “metasemi” monolayer film.
  • metalsemi means “metal+semiconductor”.
  • optical constants (refractive index n, extinction coefficient k) of the Ag—FeSi 2 metasemi were calculated for the obtained sample from the measurement data with a spectroscopic ellipsometer and the reflectance property and transmittance property measured with a spectrophotometer.
  • FIG. 2 shows the results for the absorption properties of a Ag—FeSi 2 metasemi monolayer film.
  • the absorption properties of a heat conversion member of the present invention were evaluated using a Mo—FeSi 2 metasemi monolayer film.
  • optical constants (refractive index n, extinction coefficient k) of the Mo—FeSi 2 metasemi were calculated for the obtained sample from the measurement data with a spectroscopic ellipsometer and the reflectance property and transmittance property measured with a spectrophotometer.
  • FIG. 3 shows the results for the absorption properties of a Mo—FeSi 2 metasemi monolayer film.
  • the absorption properties of a heat conversion member of the present invention were evaluated using an Cu—FeSi 2 metasemi monolayer film.
  • optical constants (refractive index n, extinction coefficient k) of the Cu—FeSi 2 metasemi were calculated for the obtained sample from the measurement data with a spectroscopic ellipsometer and the reflectance property and transmittance property measured with a spectrophotometer.
  • FIG. 4 shows the results for the absorption properties of a Cu—FeSi 2 metasemi monolayer film.
  • FeSi 2 was sputtered to form a film.
  • a FeSi 2 sample was fabricated.
  • optical constants (refractive index n, extinction coefficient k) of the FeSi 2 were calculated for the obtained sample from the measurement data with a spectroscopic ellipsometer and the reflectance property and transmittance property measured with a spectrophotometer.
  • FIG. 2 to FIG. 4 show the results for the absorption properties of a FeSi 2 monolayer film.
  • the absorption property curve shifts toward the long wavelength end as the amount of Ag (silver) addition increases (0 vol % ⁇ 4.0 vol % ⁇ 8.6 vol %).
  • the sunlight absorption property of the Ag—FeSi 2 metasemi monolayer film can be varied by adjusting the Ag (silver) material content (amount of addition), it is possible to increase the optical selectivity and accomplish efficient conversion of light to heat.
  • the absorption property curve shifts toward the long wavelength end as the amount of Mo (molybdenum) addition increases (0 vol % ⁇ 4.2 vol % ⁇ 9.4 vol %).
  • the sunlight absorption property of the Mo—FeSi 2 metasemi monolayer film can be varied by adjusting the Mo (molybdenum) material content (amount of addition), it is possible to increase the optical selectivity and accomplish efficient conversion of light to heat.
  • the absorption property curve shifts toward the long wavelength end as the amount of Cu (copper) addition increases (0 vol % ⁇ 8.1 vol %).
  • the sunlight absorption property of the Cu—FeSi 2 metasemi monolayer film can be varied by adjusting the Cu (copper) material content (amount of addition), it is possible to increase the optical selectivity and accomplish efficient conversion of light to heat.
  • the absorption property curve can be shifted toward the long wavelength end compared to a FeSi 2 monolayer film, as shown in FIGS. 2 to 4 , and optical selectivity is maintained even after shifting.
  • the heat conversion member of the present invention may be laminated on a metal layer as an infrared ray-reflective layer, and a transparent dielectric layer may be additionally formed as an anti-reflection layer.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Thermal Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)
US14/437,570 2012-10-26 2013-10-11 Heat conversion member and heat conversion laminate Abandoned US20150300695A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012-237295 2012-10-26
JP2012237295A JP6059952B2 (ja) 2012-10-26 2012-10-26 熱変換部材及び熱変換積層体
PCT/JP2013/077828 WO2014065141A1 (ja) 2012-10-26 2013-10-11 熱変換部材及び熱変換積層体

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US (1) US20150300695A1 (ja)
EP (1) EP2913604B1 (ja)
JP (1) JP6059952B2 (ja)
CN (1) CN104755854A (ja)
ES (1) ES2868097T3 (ja)
WO (1) WO2014065141A1 (ja)

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CN110887022A (zh) * 2018-09-10 2020-03-17 深圳光峰科技股份有限公司 波长转换装置及光源系统

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US10978988B2 (en) 2016-03-31 2021-04-13 Nippon Steel Corporation Selective emitter for thermophotovoltaic power generator

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JP6059952B2 (ja) 2017-01-11
JP2014085099A (ja) 2014-05-12
EP2913604A4 (en) 2016-06-22
WO2014065141A1 (ja) 2014-05-01
EP2913604B1 (en) 2021-04-21
CN104755854A (zh) 2015-07-01
EP2913604A1 (en) 2015-09-02
ES2868097T3 (es) 2021-10-21

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