US20150277237A1 - Image processor, method for generating pattern using self- organizing lithographic techniques and computer program - Google Patents

Image processor, method for generating pattern using self- organizing lithographic techniques and computer program Download PDF

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Publication number
US20150277237A1
US20150277237A1 US14/441,768 US201314441768A US2015277237A1 US 20150277237 A1 US20150277237 A1 US 20150277237A1 US 201314441768 A US201314441768 A US 201314441768A US 2015277237 A1 US2015277237 A1 US 2015277237A1
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pattern
image
template
guide
self
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Takumichi Sutani
Miki Isawa
Shunsuke Koshihara
Akiyuki Sugiyama
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Definitions

  • the present invention relates to an image processor that processes an image obtained by a scanning electron microscope, a pattern generation method that generates a pattern required for evaluation using a scanning electron microscope, and a computer program, and more particularly to an image processor that generates addressing pattern data for identifying the position of a pattern that is an evaluation object, a pattern generation method that generates an addressing pattern, and a computer program.
  • DSA Directed Self-Assembly; self-organization technique
  • Patent Literature 1 describes an example of observing a pattern, which is formed with the DSA technology, using a scanning electron microscope and an example of pattern size measurement.
  • addressing is a method that finds a unique pattern, which is present near an evaluation object pattern, through the matching processing with the use of a pre-set template and, at the same time, performs field of view positioning onto the evaluation object pattern that has a known positional relation with the unique pattern.
  • Patent Literature 1 does not disclose a method for performing addressing on a sample formed through the DSA technology. In the future, there will be a need for an addressing method suitable for a sample created through DSA patterning, a template creation method for addressing, or the creation of a pattern suitable for addressing.
  • the following describes an image processor the purpose of which is to implement image processing suitable for addressing on a sample generated through DSA patterning, a pattern generation method implemented by the self-organizing lithographic technique, and a computer program.
  • the following proposes an image processor that creates a template for addressing based on guide pattern data used for DSA patterning, a pattern generation method implemented by the self-organizing lithographic technique, and a computer program.
  • an addressing pattern can be provided that is suitable for field of view positioning when a pattern, formed via the DSA patterning process, is measured or inspected.
  • FIG. 1 is a diagram showing an example of a patterning process using the DSA technology.
  • FIG. 2 is a diagram showing an example of a pattern formed via the patterning process using the DSA technology.
  • FIG. 3 is a diagram showing an example of a patterning process using the DSA technology (large distance between guide patterns).
  • FIG. 4 is a diagram showing an example of a pattern formed via the patterning process using the DSA technology (large distance between guide patterns).
  • FIG. 5 is a diagram showing a general configuration of a scanning electron microscope.
  • FIG. 6 is a flowchart showing the creation process of an addressing pattern.
  • FIG. 7 is a diagram showing an example of pattern data used as the base of an addressing pattern.
  • FIG. 8 is a diagram showing an example in which a guide pattern is arranged in an addressing pattern.
  • FIG. 9 is a diagram showing an example in which a pattern is arranged in an addressing pattern through annealing.
  • FIG. 10 is a flowchart showing a process for creating an addressing pattern by removing a random pattern.
  • FIG. 11 is a diagram showing an example of a template for selectively extracting an aligned part after annealing.
  • FIG. 12 is a diagram showing an example of an addressing pattern after a random pattern is removed.
  • FIG. 13 is a flowchart showing the creation process of an addressing pattern and the measurement process using the created addressing pattern.
  • FIG. 14 is a diagram showing an example of a semiconductor wafer that has a plurality of chips created under the same fabrication condition.
  • FIG. 15 is a diagram showing an example of addressing pattern design data and an addressing pattern created based on the design data.
  • FIG. 16 is a diagram showing an example of the arrangement of a guide pattern.
  • FIG. 17 is a diagram showing an example in which a DSA-formed pattern is changed according to the arrangement condition of a guide pattern.
  • FIG. 18 is a diagram showing an example of a recipe creation system used to create a recipe for a SEM (Scanning Electron Microscope).
  • FIG. 19 is a diagram showing an example of a table in which a high molecular compound, a formed pattern pitch, and a width, which are associated with each other, are stored.
  • FIG. 20 is a diagram showing an example of a GUI (Graphical User Interface) screen for specifying a condition for forming an addressing pattern for use when a sample created using the DSA technology is measured.
  • GUI Graphic User Interface
  • FIG. 21 is a diagram showing an example of a measurement or inspection system that measures or inspects a semiconductor device.
  • DSA is a new patterning technology that uses the self-organization phenomenon of a macromolecule.
  • the shape or the size of a pattern can be controlled by designing the molecular structure or the molecular weight of a BPC using a method that uses the microphase separation phenomenon in which a polymer block copolymer (Block C-Polymer: BCP) forms a nano-sized, regularly distributed domain. Because this method does not use a special device and facilities, the cost can be reduced. Recently, the semiconductor fabrication process using this method is under development.
  • FIG. 1 is a diagram showing an example of a patterning process using DSA.
  • a pattern 103 of one type of polymer A is first created on the substrate, on which SiN 102 is formed on a Si wafer 101 , using the lithography process.
  • the size of the pattern 103 is 28 nm, and the pitch to the neighboring pattern is 168 nm.
  • an intermediate layer 104 is formed between the pattern 103 of polymer A and the neighboring pattern 103 , and a BCP 105 is applied on the top.
  • the BCP When heat treatment (annealing) is applied in this state, the BCP is divided into two layers, a pattern 106 (polymer A) and a pattern 107 (polymer B), and these are spaced at equal intervals each with a size of 28 nm.
  • the pattern 106 is formed on the pattern 103 and a pattern 108 is formed on the intermediate layer 104 , with both patterns made of the same material.
  • a line pattern is formed by removing the pattern 107 .
  • the patterns 106 and 108 which are target patterns, are formed along the pattern 103 that is a guide pattern. On this guide pattern, only a pattern of a unique size and a unique pitch is formed suitably.
  • FIG. 2 shows the pattern observed from top.
  • CD-SEM Cross-sectional Electron Microscope
  • Addressing uses a template, registered in advance as described above, to search an image, acquired with a field of view relatively larger than the field of view at measurement time, to find the matching degree between each position and the template. Addressing identifies a position, where the matching degree is highest or the matching degree satisfies a predetermined condition, as a matching position and, at the same time, allows the field of view to be moved to an evaluation object position (area including a measurement object pattern) that has a known positional relation with the matching position.
  • the pattern is regularly arranged in the guide pattern and, in the other part, a random pattern is generated in which there is no directional regularity. For example, an attempt to perform addressing with a random pattern remained results in a situation in which the shape matching degree between an already-registered template including a random pattern and a particular position determined by the template varies among the measuring objects and, as a result, the matching accuracy is decreased.
  • addressing is performed with a random pattern removed, an image is generated in which the guide pattern and the polymers selectively arranged in the guide pattern are superimposed. It is desired to create such a template that is similar to the pattern shape.
  • An image processor that performs pattern matching using a template including a guide pattern and a computer program are described below.
  • the method for creating a template which includes a guide pattern and a pattern, formed based on the alignment of polymers in the guide pattern, are described in detail.
  • FIG. 5 is a diagram showing an outline of a SEM.
  • a charged particle beam (electron beam) 502 emitted from a charged particle source (electron gun) 501 is used for one-dimensional or two-dimensional scanning on a sample 504 by means of scanning coils 503 .
  • a secondary particle (for example, secondary electron) 505 emitted from the sample 504 through the irradiation of the charged particle beam 502 is detected by a detector 506 and is input to a control device 507 (control processor), which has the arithmetic control function, as image data.
  • a detector that directly detects the secondary electron emitted from the sample is shown as an example in this embodiment, a detector that detects a secondary electron, generated when the electron emitted from the sample collides with a secondary electron conversion electrode, may also be used. Because the charged particle beam 502 is focused by a focus lens, not shown, and a probe with an extremely small diameter is used for scanning, a high-resolution image can be formed.
  • the sample 504 can be moved in all three-dimension directions by an x-y-z stage 508 .
  • the control device 507 also controls the charged particle source (electron gun) 501 , lens, detector 506 , x-y-z stage 508 , and an image display device 509 .
  • the charged particle beam 502 is used to scan the sample 504 two-dimensionally (x-y direction) with the use of the scanning coils 503 .
  • the signal detected by the detector 506 is amplified by a signal amplifier included in the control device 507 and, then, transferred to the image memory for display on the image display device 509 as the sample image.
  • the secondary signal detector may be a device that detects a secondary electron and a reflection electron or a device that detects a light or an X ray.
  • the address signal corresponding to a memory location in the image memory is generated in the control device 507 or in a separately installed computer and, after being converted to an analog signal, is supplied to the scanning coils.
  • the x-direction address signal is a digital signal that repeats the address from 0 to 512
  • the y-direction address signal is a digital signal that is incremented by one when the x-direction address signal reaches 512 from 0 and then repeats 0 to 512. This digital signal is converted to an analog signal.
  • the two-dimensional image in the electron beam deflection area, generated by the scanning coils, is recorded in the image memory.
  • the signals in the image memory can be read sequentially on a time-series basis by the read-address generation circuit that operates in synchronization with the read clock.
  • a signal that is read corresponding to an address is converted to an analog signal and is used as the brightness modulation signal in the image display device 509 .
  • the control device 507 which functions as the image processor, has an input device, not shown, via which an image capturing condition (scanning speed, cumulative number of images) or a field of view correction method can be specified or the output or saving of an image can be specified.
  • an image capturing condition scanning speed, cumulative number of images
  • a field of view correction method can be specified or the output or saving of an image can be specified.
  • the device described in this example has the function to form a line profile based on the detected secondary electron or the reflection electron.
  • the line profile is formed based on the amount of electrons detected when the primary electron beam is used for one-dimensional or two-dimensional scanning or based on the brightness information on the sample image.
  • the obtained line profile is used, for example, for measuring the size of a pattern formed on a semiconductor wafer.
  • the scanning electron microscope shown in FIG. 5 has a configuration, in which the control device 507 is integrated with the main body of the scanning electron microscope, or a similar configuration, the scanning electron microscope is not of course limited to that configuration.
  • a control processor provided separately from the main body of the scanning electron microscope, may also be used to perform the processing described below.
  • a transmission medium that transmits the detection signal, detected by the secondary signal detector, to the control processor or transmits the signal from the control processor to the lens or the deflector of the scanning electron microscope, as well as an input/output terminal that sends or receives the signal transmitted via the transmission medium, is required.
  • the device in this example has the function that stores a condition, used for observing a plurality of points on a semiconductor wafer (size measurement positions, optical conditions for the scanning electron microscope, etc.), as a recipe in advance and performs size measurement or observation according to the contents of the recipe.
  • the program that performs the processing described below may be registered in a recording medium to allow the control processor, which supplies necessary signals to the scanning electron microscope, to execute the program. That is, the description of the example below is also the description of the program that can be used on a charged particle beam device such as a scanning electron microscope having an image processor or is the description of the program product.
  • a circuit design data management device 510 which stores design data on a pattern on a semiconductor wafer and converts the design data to the data necessary for SEM control, is connected to the control device 507 .
  • the circuit design data management device 510 has the function that creates a recipe for controlling the SEM based on the design data on a semiconductor pattern received from an input device not shown.
  • the circuit design data management device 510 also has the function to rewrite a recipe based on the signal transmitted from the control device 507 .
  • the circuit design data management device 510 is not limited to this configuration.
  • the control device 507 and the circuit design data management device 510 may be configured as one integrated device.
  • the sample 504 is a wafer created using the self-organizing technology in the semiconductor fabrication process.
  • the semiconductor circuit design data corresponding to the pattern is used as one of the inputs used for creating a recipe used for evaluating the wafer.
  • the semiconductor circuit design data used in this case is a pattern shape formed on a photomask.
  • the inspection object is a semiconductor wafer in the description below, any inspection object may be used as long as the object is a DSA technology based wafer.
  • the circuit design data may have any format and type if the software that displays the circuit design data can display its format form and can treat the circuit design data as graphic data.
  • a device As a system for creating a measurement recipe from semiconductor circuit design data, a device is used that can set a measurement recipe from circuit design data, that can execute the measurement recipe on the CD-SEM, and that can obtain necessary measurement data.
  • FIG. 18 is a diagram showing an example of a recipe creation system that includes an image processor (arithmetic processing device) 1800 and recording media that store data for creating addressing pattern data.
  • the image processor 1800 is connected to a SEM not shown and is connected to a design data storage medium 1801 , a target pattern data storage medium 1802 , and a simulator 1803 , which simulates a pattern shape and so on based on design data, via a network.
  • An input device 1804 from which an addressing pattern creation condition can be entered, is connected also to the image processor 1800 .
  • the design data storage medium 1801 stores graphic data on a guide pattern used for the DSA technology. This graphic data can be read based on selection information received from the input device 1804 .
  • the simulator 1803 can simulate the result of a pattern based on the graphic data on a guide pattern stored in the design data storage medium 1801 and to send the graphic data to the image processor 1800 as data on the guide pattern.
  • the target pattern data storage medium 1802 stores SEM image data on high molecular compounds, the pitch width data on high molecular compounds, or pseudo image data on high molecular compounds. These data can be read based on an instruction on a high molecular compound, or based on an input of the pattern width or pitch of a high molecular compound, received from the input device 1804 .
  • 19 is a diagram showing a database in which the type of a high molecular compound and the pitch and width of the high molecular compound, which are associated with each other, are stored. Based on these data, the image processor 1800 can form the pseudo image of a polymer formed with the same line width and pitch.
  • FIG. 20 is a diagram showing an example of the GUI (Graphical User Interface) screen displayed on the display device of the input device 1804 .
  • GUI Graphic User Interface
  • the graphic data on an area which includes a guide pattern, is read from the design data storage medium 1801 and the simulator 1803 .
  • the field of view size for addressing may be selected by selecting a field of view size from a field of view size setting window 2003 for setting the field of view size. Where in the field of view to locate the pattern for addressing may be selected by entering location information in a location in field of view selection window 2004 .
  • the information on the type of a high molecular compound can be selected in an additional pattern selection window 2005 .
  • the SEM image data, high molecular compound pitch and width data, or pseudo image data which are stored in association with the material, can be read.
  • the pseudo image of a high molecular compound can be formed based on the numeric values entered in a pitch information input window 2006 and a pattern width input window 2007 .
  • the pseudo image of a high molecular compound may be formed by reading the brightness information allocated in advance to each high molecular compound and by arranging the brightness information according to the size of the address pattern to be created and the pitch information and pattern information that are set.
  • the image processor 1800 can store an addressing pattern, created based on the setting information, in a recipe storage medium 1808 as the SEM measurement recipe information.
  • FIG. 21 is a diagram showing the detail of a measurement or inspection system that includes a SEM.
  • This system includes a SEM main body 2101 , a control device 2102 of the SEM main body, and an image processor 2103 that performs template matching and measurement processing.
  • a recipe storage unit 2104 included in the image processor 2103 , is for registering a recipe, created by the image processor 1800 shown in FIG. 18 .
  • the image processor 2103 includes a matching processing unit 2105 that performs matching processing using a template in the image signals obtained via the control device 2102 and a measurement processing execution unit 2106 that locates the field of view onto the measurement position identified by the matching processing unit 2105 , obtains the detection signal, creates a line profile based on the detection signal, and measures the size between peaks in the profile.
  • a recipe an operation program for automatically operating the SEM, is stored in a memory 208 described above or in an external storage medium for each type of a sample to be measured, and is read as necessary.
  • image processing hardware such as the CPU (Central Processing Unit), ASIC (Application Specific Integrated Circuit), and FPGA (Field Programmable Gate Array) included in the image processor 2103 , is used to perform image processing according to the purpose.
  • An image processing unit 207 has the function.
  • Template matching is a method for identifying a position, where a captured image to be located and a template match, based on the matching degree determination using normalized correlation.
  • the matching processing unit 2105 identifies a desired position in a captured image based on the matching degree determination.
  • the degree of matching between a template and an image is represented by the term “matching degree” or “similarity degree” in this embodiment, these two terms are equivalent in that they mean an index indicating a coincidence between the two.
  • a mismatching degree or dissimilarity degree is one mode of a matching degree or similarity degree.
  • an addressing pattern is created using a photomask that is created by arranging a guide pattern with the same size and pitch as those of a target pattern as shown in FIG. 1 . More specifically, exposure is performed using a photomask created by arranging the pattern 103 , which will become the guide pattern, at the same pitch in a pattern (for example, cross pattern) that will become an addressing pattern and, in addition, the BCP is applied and annealing is performed to form the pattern.
  • a random pattern which is present outside the addressing pattern, is removed to generate template image data for addressing.
  • the reason for generating an addressing pattern by preparing a guide pattern arranged at a pitch smaller than the whole size of the addressing pattern is as follows. Because an addressing pattern must capture an image with magnification lower (larger field of view) than that of a measurement object pattern for correcting the position of a radiated electron beam, the addressing pattern is usually formed in a size larger than that of the target pattern.
  • FIG. 4 is a top view of a pattern created using the process shown in FIG. 3 .
  • a guide pattern 401 is present in the lower layer of a target pattern 402 .
  • the size and the pitch of the pattern of the target pattern 402 are created as intended, its direction cannot be controlled with the result that the pattern is formed in random directions. Because the guide pattern 401 is present in the lower layer of the target pattern 402 and the target pattern 402 in the upper layer is formed in random directions, the contrast is decreased and it is sometimes difficult to use the pattern as an addressing pattern.
  • the contrast of the addressing pattern can be maintained to fulfill its role by forming an addressing pattern using the guide of the same rule as that of a target pattern. Performing image processing for the pattern, formed in this way, eliminates the effect of a part uncontrollable by DSA, giving high position correction accuracy in addressing in the measurement sequence.
  • FIG. 6 is a flowchart showing a part of the process.
  • the circuit design data configured by a cross-shaped pattern and two straight lines shown in FIG. 7 .
  • the pattern to be created is a pattern that is larger than the cross target pattern in size and is used as an addressing pattern in a CD-SEM measurement recipe.
  • the actual sizes of the cross pattern are shown in the figure.
  • the target size is 28 nm and the guide pattern is arranged at a pitch of 168 nm.
  • the line width of each of the two straight lines is 28 nm that is the target size of the DSA and the two straight lines are arranged at a pitch of 168 nm. In this case, it is determined in step 601 that the cross pattern does not satisfy the DSA allowable size and that the two straight lines satisfy the DSA allowable size and therefore they are accepted.
  • step 602 the pattern is arranged in such a way that the cross pattern is configured only by the straight pattern.
  • the straight line is a vertical line, a horizontal line may also be used.
  • FIG. 8 is a diagram showing an actual example in which the 28 nm patterns are arranged in the cross pattern in FIG. 7 at a pitch of 168 nm.
  • the guide pattern is arranged at the right end of the cross pattern and, in such a case, the guide pattern is not arranged at the pattern ends other than the right end.
  • the guide pattern is not arranged outside the original pattern area. The reason is that there is a need to avoid the possibility of overlapping that may occur when the guide patterns of the patterns, adjacent to each other at a suitable interval, are arranged.
  • Each of the two straight lines, originally created according to the DSA allowable size, is used directly as a guide pattern 802 .
  • a DSA pattern in a part, where there is no guide pattern has a fingerprint-like pattern the direction of which is uncontrollable. Therefore, when a DSA pattern is formed in the state in which there is no guide pattern, for example, at the end of the pattern in FIG. 8 , a fingerprint-like random pattern 902 is formed in the area outside the guide pattern at the ends of the cross pattern on the wafer, as shown in FIG. 9 .
  • the pattern created in this way, as an addressing pattern in the measurement recipe of a CD-SEM, it is necessary to perform image processing for the captured SEM image and, after that, to save the image in the measurement recipe as an image template with the surrounding fingerprint-like pattern removed as an image.
  • FIG. 10 shows the image template registration flow for registering the image template.
  • the field of view is moved to the pattern used for addressing and, with the SEM image displayed, the magnification (field of view area), the accelerating voltage of electron beam (attainment energy of electron beam), the probe current, and number of frames condition are selected.
  • the magnification is set so that the field of view is a square area having the side length of 450 nm, and the accelerating voltage is set to 800V, the probe current is set to 8 pA, and the cumulative number of frame is set to 16.
  • step 1002 an area including a pattern, which will be used as the addressing pattern, is specified, and the image of the area is registered as the base image.
  • This base image becomes a template image through the processing that will be described later.
  • step 1003 annealing is performed to remove a random pattern positioned in an area other than the self-organizing area. The reason for removing a random pattern is as follows.
  • the CD-SEM is used to perform fixed-point measurement of a particular pattern of a plurality of samples created under the same fabrication condition, especially, in the mass production process of semiconductor devices.
  • the shape of a random pattern varies according to the sample. That is, if a template is created with a random pattern included, the degree of matching between the template and a particular area, for which template matching is performed, is decreased.
  • This embodiment in which a template is created by removing a random pattern that will result in a decrease in the matching degree, can reduce the possibility of matching error generation.
  • a coordination part extraction unit 1805 of the image processor 1800 shown in FIG. 18 identifies an aligned part and a non-aligned part using the template of an aligned part that is registered in advance.
  • the base image (template) and an image to be evaluated are required and, in this example of the cross pattern, the shortest segment in the vertical direction, in which a straight line is formed, is used. In the pattern shown in FIG. 7 , the segment with a length of 450 nm is used.
  • FIG. 11 is a diagram showing an example of a template for extracting an aligned pattern.
  • the correlation value arithmetic processing which uses a template such as that shown in FIG. 11 , is performed for the SEM image such as that shown in FIG. 9 to selectively extract a part where the correlation value is equal to or larger than the predetermined value (or to remove the other part).
  • the predetermined value or to remove the other part.
  • the size of the cross pattern itself becomes smaller than the original size that is set in FIG. 7 .
  • the purpose of the addressing pattern is to match positions, the relative position remains the same and therefore no problem is generated if both the size of the template image and the size of the pattern on the wafer change in the same manner.
  • step 1004 whether the fingerprint-like pattern surrounding the addressing pattern is successfully removed is confirmed either visually or using a determination algorithm for automatically determining the pattern shape. If the removal cannot be confirmed successfully, the surrounding pattern can be removed successfully in some cases by changing the specification of the base pattern area specified in step 1002 .
  • the processing described above allows the template, in which the aligned part is selectively extracted as shown in FIG. 12 , to be created.
  • the image data extracted by the coordination part extraction unit 1805 to which the predetermined information required to register a condition as a recipe is added by an addressing pattern data generation unit 1807 , is registered in the recipe data storage medium 1808 .
  • the template shown in FIG. 12 has the shape of a cross-shaped guide pattern, and this image data is stored as the template.
  • the following describes the process of measurement on the SEM that is performed by the image processor 2103 , shown in FIG. 21 , by executing a recipe stored in the recipe data storage medium 1808 .
  • a measurement object pattern is created using the self-organizing technology, and there is a pattern with a size larger than the target size. This pattern is configured only by an allowable pattern created through the process such as that described above.
  • a CD-SEM measurement recipe is executed, a wafer is loaded into the device, the condition to be used is set and, after that, wafer alignment is performed first to position the wafer. This wafer alignment is performed in two stages: one is alignment by means of an optical microscope image (step 1301 ) and the other by means of a SEM image (step 1302 ).
  • Alignment by means of an optical microscope image is not affected much by the presence of a random pattern.
  • alignment by means of a SEM image requires the usual procedure as well as the procedure for removing a fingerprint-like pattern generated by the DDA technology. The reason is that alignment by means of a SEM image requires that the similar position correction be performed at different exposure positions on a wafer 1401 as shown by a chip 1403 ( FIG. 14 ).
  • the field of view is moved to a position registered as the length measurement point (step 1305 ) and addressing is performed. Also when this addressing is performed, the fingerprint-like pattern around the pattern must be removed (step 1306 ) before performing addressing.
  • the exposure shot, used at measurement recipe registration time, and the exposure shot, used for actual measurement are sometimes different shots and, in that case, the patterns are not exactly similar because the pattern, for which addressing is performed, is a pattern around which there is a fingerprint-like pattern the direction of which is random.
  • the subsequent sequence includes the step for performing position correction using the registered template (step 1307 ), the step for setting the brightness and contrast of the length measurement point (step 1308 ), the step for performing auto-focus (step 1309 ), and the step for moving the field of view to the length measurement point, for acquiring the SEM image, and for performing measurement (step 1310 ).
  • the processing moves to the next length measurement point to perform length measurement using the same sequence.
  • Using this method allows addressing to be performed suitably even for a pattern formed based on DSA, thus enabling length measurement to be performed using a measurement recipe.
  • an image template to be saved in the measurement recipe is registered by observing an accrual wafer, while, when creating a measurement recipe in this embodiment, an image template to be registered is created based on circuit design data.
  • the circuit design data used at this time is data used when the photomask is created, the size of the whole data is reduced to 1 ⁇ 4 in order to establish correspondence with the pattern on the wafer. This is because a 1 ⁇ 4 reduction projection type exposure device is used in this embodiment when exposure is performed for the guide pattern.
  • the circuit design data used this time does not include a pattern that is formed using a size other than the target size of the DSA technology. As shown in FIG. 8 , the line pattern with the target size is arranged at a specified periodic interval.
  • This circuit design data is stored in the design data storage medium 1801 and is captured into the image processor 1800 based on selection information entered from the input device 1804 .
  • the information not included in the design data is acquired by capturing the information other than the usual design data stored in the target pattern data storage medium 1802 or by capturing the input information entered from the input device 1804 .
  • the information not included in the design data is information on the target pattern size, guide pattern pitch, target pattern pitch, and base pattern period. These information is received as addition information.
  • the target pattern size is set to 28 nm
  • the guide pattern pitch is set to 168 nm
  • the target pattern pitch is set to 1:1
  • the base pattern period is set to 1.
  • FIG. 15 is a diagram showing design data 1501 in which the guide pattern is formed in the cross-shaped addressing pattern data and superimposition data 1502 obtained by adding additional information to the design data 1501 .
  • the target pattern with the size of 28 nm is formed at a pitch of 168 nm with the ratio between the line part and the space part being 1:1.
  • the base pattern period is the same as the period in the template that is used for removing a fingerprint-like pattern before performing addressing when the measurement recipe, which is set, is executed on the CD-SEM.
  • the base area has the size equivalent to one period, that is, 168 nm, in the direction perpendicular to the line pattern and the size equal to that of the shortest part of the cross pattern as in FIG. 11 , that is 450 nm, in the direction of the line pattern. That is, the line and the space, each in 28 nm in width, are formed at a ratio of 1:1, and the area surrounded by the lines, 168 nm and 450 nm in size, is the base area in this embodiment.
  • This embodiment is different from the first embodiment in that the area shown in FIG. 11 is an area selected by the user from an actual pattern on a wafer while the area in this embodiment is set automatically by the system based on the parameters.
  • the areas are classified into types, one is an area in which a pattern is arranged and the other is an area in which a pattern is not arranged, according to whether there is a neighboring guide pattern.
  • guide patterns 1601 different in length, are arranged at the guide pattern pitch of 168 nm. Because there is a guide pattern at both ends of the area of a guide pattern pitch 1602 , a pattern is arranged in this area. On the other hand, because there is a guide pattern only at one end of an area 1603 , a pattern is not formed in this area. In the case of FIG.
  • FIG. 16( b ) because there is a guide pattern at both ends of an area 1604 but the interval is not equal to the guide pattern pitch that is set by the parameters described above, a pattern is not formed in this area.
  • a pattern is formed when there is a guide pattern at both ends of an area and its interval is equal to the guide pitch.
  • the figure is a figure showing the pattern shape obtained by performing annealing for the sample shown in FIG. 16 and is a figure showing the figure in which a pattern 1702 is arranged in an area where there is a guide pattern 1701 at both ends. As shown in FIG. 17( b ), when the distance between the guide patterns is large, a pattern is not arranged.
  • the information different from circuit design data, composed only of guide patterns is stored in the target pattern data storage medium 1802 and is read as necessary, or such information is set via the input device 1804 , to enable an addressing pattern, similar to the actual image, to be generated.
  • the addressing pattern data generation unit 1807 creates a measurement recipe by adding information, necessary for automatic measurement such as the information on an addressing point, auto focus point, and brightness and contrast algorithm for use in the sequence of the measurement recipe, to the superimposition data formed by adding additional information to the design data (simulation data) that is formed as described above. Then, the addressing pattern data generation unit 1807 stores the created measurement recipe in the recipe data storage medium 1808 .
  • the data shown in FIG. 7 be used as the circuit design data rather than the pattern shown in FIG. 17 where a DSA target pattern is arranged or the pattern 1501 shown in FIG. 15 where a guide pattern is arranged.
  • the reason is that a large-sized pattern must be arranged as a large pattern when the method used for automatic setting is directly used.
  • the GUI screen shown in FIG. 20 has a display area 2008 in which a template image being created is displayed and a display are 2009 in which a low-magnification image for addressing is displayed. These display areas allows a recipe creator to confirm the suitability of an addressing pattern while visually confirming these display areas.

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