US20150207295A1 - Distributed feedback laser diode and distributed feedback laser diode fabrication method - Google Patents

Distributed feedback laser diode and distributed feedback laser diode fabrication method Download PDF

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Publication number
US20150207295A1
US20150207295A1 US14/530,881 US201414530881A US2015207295A1 US 20150207295 A1 US20150207295 A1 US 20150207295A1 US 201414530881 A US201414530881 A US 201414530881A US 2015207295 A1 US2015207295 A1 US 2015207295A1
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Prior art keywords
diffraction grating
layer
feature
laser diode
distributed feedback
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Abandoned
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US14/530,881
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Tetsuya Uetsuji
Kazushige Kawasaki
Masafumi Minami
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Assigned to MITSUBISHI ELECTRIC CORPORATION reassignment MITSUBISHI ELECTRIC CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KAWASAKI, KAZUSHIGE, MINAMI, MASAFUMI, UETSUJI, TETSUYA
Priority to US14/718,340 priority Critical patent/US9455550B2/en
Publication of US20150207295A1 publication Critical patent/US20150207295A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis

Definitions

  • the present invention relates to a distributed feedback laser diode including a diffraction grating formed by electron beam lithography and a method of fabricating the distributed feedback laser diode.
  • Japanese Patent Laid-Open No. 2005-353761 discloses a distributed feedback laser diode including a diffraction grating having a sawtooth profile at the interface between an InGaAsP light guiding layer and a p-type InP cladding layer.
  • diffraction grating features are drawn on a resist by electron beam lithography and then a diffraction grating is formed using the diffraction grating features.
  • Electron beam lithography enables the drawing of fine diffraction grating features, but has the problem that processing time increases in proportion to the area of the diffraction grating features.
  • the present invention has been made in order to solve the above-described problem, and an object of the present invention is to provide a distributed feedback laser diode and a distributed feedback laser diode fabrication method which can reduce the time required for electron beam lithography.
  • a distributed feedback laser diode includes a substrate, an active layer formed above the substrate, and a diffraction grating having a first feature and a second feature and being configured to diffract light generated in the active layer, the second feature being shorter than the first feature and facing a central portion of the first feature.
  • a distributed feedback laser diode includes a substrate, an active layer formed above the substrate, and a diffraction grating having a plurality of features and being configured to diffract light generated in the active layer, wherein each of the plurality of features is formed by a series of dots each having a length of not less than 2.5 ⁇ M.
  • a method of fabricating a distributed feedback laser diode includes the steps of forming a diffraction grating layer above a substrate, forming a conductive layer above the diffraction grating layer, forming a resist on the conductive layer, applying an electron beam to the resist to draw a diffraction grating feature by electron beam lithography, and forming a diffraction grating by etching the diffraction grating layer to leave a portion of the diffraction grating layer, the portion of the diffraction grating layer being directly under the diffraction grating feature.
  • a method of fabricating a distributed feedback laser diode includes the steps of forming a diffraction grating layer above a substrate, forming an insulating layer patterned into a strip on the diffraction grating layer, forming a resist on the insulating layer and the diffraction grating layer to make a portion of the resist on the insulating layer thinner than a portion of the resist on the diffraction grating layer, applying an electron beam to the resist on the insulating layer to draw a diffraction grating feature by electron beam lithography, and forming a diffraction grating by etching the diffraction grating layer to leave a portion of the diffraction grating layer, the portion of the diffraction grating layer being directly under the diffraction grating feature.
  • FIG. 1 is a sectional view of a distributed feedback laser diode according to an embodiment 1;
  • FIG. 2 is a plan view of the diffraction grating illustrated in FIG. 1 ;
  • FIG. 3 is a plan view of a diffraction grating according to a modified example
  • FIG. 4 is a plan view of a diffraction grating according to another modified example
  • FIG. 5 is a plan view of a diffraction grating of a distributed feedback laser diode according to an embodiment 2;
  • FIG. 6 is a partially sectional perspective view of a wafer for explaining a distributed feedback laser diode fabrication method according to an embodiment 3;
  • FIG. 7 is a partially sectional perspective view of a wafer for explaining a distributed feedback laser diode fabrication method according to an embodiment 4.
  • FIG. 8 illustrates the diffraction grating features in the process of being formed.
  • FIG. 1 is a sectional view of a distributed feedback laser diode 10 according to an embodiment 1 of the present invention.
  • the distributed feedback laser diode 10 includes a substrate 12 made of, for example, p-type InP. On the substrate 12 , a p-type cladding layer 14 is formed. On the p-type cladding layer 14 , an active layer 16 is formed. On the active layer 16 , an n-type spacer layer 18 is formed.
  • a diffraction grating 20 made of, for example, InP is formed on the n-type spacer layer 18 .
  • a light guiding layer 22 made of, for example, InGaAsP is formed between a plurality of features constituting the diffraction grating 20 .
  • a light guiding layer 22 made of, for example, InGaAsP is formed on the light guiding layer 22 .
  • an n-type cladding layer 24 made of, for example, InP is formed. Accordingly, the diffraction grating 20 is buried under the n-type cladding layer 24 and in the light guiding layer 22 .
  • n-side electrode 28 is formed with a contact layer 26 interposed therebetween.
  • p-side electrode 30 is formed on a backside of the substrate 12 .
  • the distributed feedback laser diode 10 constitutes a resonator having end faces 32 and 34 .
  • FIG. 2 is a plan view of the diffraction grating 20 illustrated in FIG. 1 .
  • the diffraction grating 20 has a structure in which first features 20 a and second features 20 b shorter than the first features are alternately formed.
  • the length ( ⁇ 1) of each first feature 20 a is, for example, 10 ⁇ M.
  • the length ( ⁇ 2) of each second feature 20 b is, for example, 3 ⁇ M.
  • the spacing between the first feature 20 a and the second feature 20 b is, for example, approximately 200 nm.
  • the second feature 20 b faces a central portion of the first feature 20 a. In other words, the second feature 20 b does not face end portions of the first feature 20 a .
  • the diffraction grating 20 functions as a diffraction grating which includes a plurality of 3- ⁇ m-width features provided from the end face 32 to the end face 34 at regular intervals. Further, the diffraction grating 20 diffracts light generated in the active layer 16 to realize single-wavelength emission.
  • a method of forming the diffraction grating 20 will be described.
  • a diffraction grating layer for forming a diffraction grating is formed on an entire surface of a wafer.
  • a resist is formed on the diffraction grating layer.
  • electron beam lithography is performed on the resist to form diffraction grating features corresponding to features of the diffraction grating one by one.
  • part of the diffraction grating layer is etched to form the diffraction grating 20 .
  • the widths of the features constituting the diffraction grating are 10 ⁇ M, only central portions having widths of 3 ⁇ M are actually used, and other portions having total widths of 7 ⁇ M are formed in order to cope with process variations. Accordingly, in the case where process variations can be controlled to a certain extent, the widths of the features constituting the diffraction grating may be shorter than 10 ⁇ M.
  • the second features 20 b are shorter than the first features 20 a, the time required for electron beam lithography can be reduced accordingly. Furthermore, since the first features 20 a and the second features 20 b form a diffraction grating which includes a plurality of 3- ⁇ m-width features provided from the end face 32 to the end face 34 at regular intervals, a diffraction grating can be provided which has a function equivalent to that of a diffraction grating formed only by first features.
  • FIG. 3 is a plan view of a diffraction grating according to a modified example.
  • the density of second features 20 b is low compared to that in the diffraction grating of the distributed feedback laser diode 10 .
  • FIG. 4 is a plan view of a diffraction grating according to another modified example.
  • This diffraction grating of a distributed feedback laser diode 100 includes second features 20 b and 20 c. Both the second features 20 b and 20 c are shorter than the first features 20 a, but the second features 20 c are shorter than the second features 20 b.
  • the density of the second features may be changed, or second features having a plurality of different lengths may be provided.
  • the lengths of the first features 20 a and the lengths of the second features 20 b are not particularly limited, but preferably within the range of 3 ⁇ M to 10 ⁇ M so that the time required for electron beam lithography may not be long. Moreover, a phase shift portion may be formed in which the phase of the diffraction grating is intentionally shifted. It should be noted that these modifications can be applied to distributed feedback laser diodes and distributed feedback laser diode fabrication methods according to embodiments below.
  • FIG. 5 is a plan view of a diffraction grating of a distributed feedback laser diode 150 according to an embodiment 2 of the present invention.
  • a plurality of features 152 formed parallel to the x direction constitute a diffraction grating 154 .
  • Each of the plurality of features 152 is formed by a series of 2.5- ⁇ m-length dots 152 a , 152 b, 152 c, and 152 d linearly arranged. It should be noted that the lengths of the dots are not particularly limited as long as the lengths of the dots are not less than 2.5 ⁇ M.
  • each diffraction grating feature is formed by a series of a plurality of dots.
  • the diameters of the dots are several hundred nanometers, many dots are required to form a single feature having a length of 10 ⁇ M, and thus the time required for electron beam lithography becomes long.
  • each feature is formed by a series of dots having lengths of not less than 2.5 ⁇ M, each feature can be formed by a very small number of dots. Accordingly, the time required for electron beam lithography can be reduced by increasing the scanning speed of a wafer with respect to an electron beam irradiation apparatus.
  • FIG. 6 is a partially sectional perspective view of a wafer for explaining a distributed feedback laser diode fabrication method according to an embodiment 3 of the present invention.
  • a diffraction grating layer 20 A is formed above the substrate 12 .
  • an insulating layer 200 made of, for example, SiO 2 is formed.
  • a conductive layer 202 made of, for example, W (tungsten) is formed.
  • the conductive layer 202 is formed above the diffraction grating layer 20 A.
  • a resist 204 is formed on the conductive layer 202 .
  • an electron beam is applied to the resist 204 to draw diffraction grating features by electron beam lithography.
  • an electron beam 212 emitted from an electron beam irradiation apparatus 210 is applied to the resist 204 to form diffraction grating features 214 for forming a diffraction grating.
  • FIG. 6 illustrates the diffraction grating features in the process of being formed.
  • the conductive layer 202 , the insulating layer 200 , and the diffraction grating layer 20 A are etched by, for example, dry etching to leave portions of the diffraction grating layer 20 A which are directly under the diffraction grating features 214 .
  • a diffraction grating is formed.
  • the insulating layer 200 and the conductive layer 202 are removed.
  • the diffraction grating layer 20 A may be etched using the insulating layer 200 as a mask after features corresponding to the diffraction grating features 214 are formed in the insulating layer 200 .
  • the distributed feedback laser diode fabrication method since the conductive layer 202 is formed, the distributed feedback laser diode can be prevented from charging up (being charged) due to the irradiation of the resist 204 with an electron beam. Accordingly, the resolution can be improved by increasing the accelerating voltage and the beam current of the electron beam irradiation apparatus 210 , and the time required for electron beam lithography can be reduced.
  • the conductive layer 202 functions as an electron beam reflecting film, the sensitivity of the resist can be increased compared to that in the case where the conductive layer 202 is not formed. Accordingly, the time required for electron beam lithography can be reduced by increasing the speed of electron beam lithography.
  • the insulating layer 200 is provided in order to protect the diffraction grating layer 20 A from the conductive layer 202 . Accordingly, in the case where the diffraction grating layer 20 A is not damaged, the insulating layer 200 may be omitted.
  • the material forming the conductive layer 202 is not limited to W, but may be any material which can prevent charging-up and increase the sensitivity of the resist.
  • FIG. 7 is a partially sectional perspective view of a wafer for explaining a distributed feedback laser diode fabrication method according to an embodiment 4 of the present invention.
  • a diffraction grating layer 20 A is formed above the substrate 12 .
  • an insulating layer 250 patterned into a strip is formed on the diffraction grating layer 20 A.
  • the insulating layer 250 is made of, for example, SiO 2 .
  • the width ( ⁇ 4) of the insulating layer 250 is, for example, 10 ⁇ M.
  • FIG. 8 illustrates a resist 252 .
  • the resist 252 includes a portion (first portion 252 a ) formed on the diffraction grating layer 20 A and a portion (second portion 252 b ) formed on the insulating layer 250 .
  • the thickness (Z2) of the second portion 252 b is made thinner than the thickness (Z1) of the first portion 252 a by taking advantage of the property of the resist of being less prone to adhere to the surface of the insulating layer 250 than the ( 100 ) surface of the diffraction grating layer 20 A.
  • the second portion 252 b may be made thinner than the first portion 252 a in another way.
  • diffraction grating features 214 are formed using an electron beam 212 emitted from the electron beam irradiation apparatus 210 .
  • FIG. 8 illustrates the diffraction grating features in the process of being formed.
  • the insulating layer 250 and the diffraction grating layer 20 A are etched by, for example dry etching to leave portions of the diffraction grating layer 20 A which are directly under the diffraction grating features 214 .
  • a diffraction grating is formed.
  • residual portions of the insulating layer 250 are removed.
  • the time required for electron beam lithography can be reduced by reducing the lengths of features constituting a diffraction grating, forming each of the features by large dots, or forming a conductive layer or an insulating layer under a resist.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
US14/530,881 2014-01-23 2014-11-03 Distributed feedback laser diode and distributed feedback laser diode fabrication method Abandoned US20150207295A1 (en)

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JP2014010350A JP2015138905A (ja) 2014-01-23 2014-01-23 分布帰還型半導体レーザ素子、分布帰還型半導体レーザ素子の製造方法

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TWI710186B (zh) * 2017-10-17 2020-11-11 光環科技股份有限公司 分散式回饋雷射的結構與製法
WO2019146321A1 (ja) * 2018-01-29 2019-08-01 パナソニック株式会社 半導体レーザ素子
US11949453B2 (en) 2021-06-25 2024-04-02 Electronics And Telecommunications Research Institute Test device and test method for DFB-LD for RoF system

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EP0632298A2 (de) * 1993-07-03 1995-01-04 Robert Bosch Gmbh DFB oder DBR Gitter
US5394429A (en) * 1992-10-30 1995-02-28 Nec Corporation Distributed-feedback laser with improved analog modulation distortion characteristics and method for fabricating the same
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US6567446B1 (en) * 2000-08-16 2003-05-20 Agere Systems Inc Optical device with increased spectral width
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US7151789B2 (en) * 2002-12-20 2006-12-19 Spectalis Corp External-cavity lasers

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US4375686A (en) * 1979-12-13 1983-03-01 U.S. Philips Corporation Semiconductor laser
US4837775A (en) * 1985-10-21 1989-06-06 General Electric Company Electro-optic device having a laterally varying region
US5105431A (en) * 1990-03-16 1992-04-14 Kabushiki Kaisha Toshiba Semiconductor laser
US5182758A (en) * 1990-12-04 1993-01-26 Sharp Kabushiki Kaisha Periodic gain-type semiconductor laser device
US5357538A (en) * 1992-04-24 1994-10-18 France Telecom Distributed feedback laser structure
US5394429A (en) * 1992-10-30 1995-02-28 Nec Corporation Distributed-feedback laser with improved analog modulation distortion characteristics and method for fabricating the same
EP0632298A2 (de) * 1993-07-03 1995-01-04 Robert Bosch Gmbh DFB oder DBR Gitter
US5659562A (en) * 1995-03-17 1997-08-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser including embedded diffraction grating
US6064685A (en) * 1998-02-26 2000-05-16 Alcatel Semiconductor optical reflector and a method of manufacturing the same
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US6567446B1 (en) * 2000-08-16 2003-05-20 Agere Systems Inc Optical device with increased spectral width
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JP2015138905A (ja) 2015-07-30
TWI524611B (zh) 2016-03-01
KR20150088184A (ko) 2015-07-31
TW201530946A (zh) 2015-08-01
US9455550B2 (en) 2016-09-27
CN104810723A (zh) 2015-07-29
US20150255957A1 (en) 2015-09-10

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Owner name: MITSUBISHI ELECTRIC CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:UETSUJI, TETSUYA;KAWASAKI, KAZUSHIGE;MINAMI, MASAFUMI;REEL/FRAME:034092/0167

Effective date: 20140807

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION