US20150083967A1 - Phosphor, Method for Manufacturing same, and light-emitting device - Google Patents

Phosphor, Method for Manufacturing same, and light-emitting device Download PDF

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US20150083967A1
US20150083967A1 US14/396,034 US201314396034A US2015083967A1 US 20150083967 A1 US20150083967 A1 US 20150083967A1 US 201314396034 A US201314396034 A US 201314396034A US 2015083967 A1 US2015083967 A1 US 2015083967A1
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Prior art keywords
phosphor
light
light emitting
emitting device
emitting element
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Inventor
Makoto Watanabe
Daisuke Inomata
Kazuo Aoki
Kiyoshi Shimamura
Encarnacion Antonia Garcia Villora
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National Institute for Materials Science
Koha Co Ltd
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National Institute for Materials Science
Koha Co Ltd
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Assigned to NATIONAL INSTITUTE FOR MATERIALS SCIENCE, KOHA CO., LTD. reassignment NATIONAL INSTITUTE FOR MATERIALS SCIENCE ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SHIMAMURA, KIYOSHI, GARCIA VILLORA, ENCARNACION ANTONIA, AOKI, KAZUO, WATANABE, MAKOTO, INOMATA, DAISUKE
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    • C—CHEMISTRY; METALLURGY
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    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

Definitions

  • This invention relates to a phosphor, a method for manufacturing the same, and a light emitting device.
  • a light emitting device that includes a light emitting element comprised of an LED (Light Emitting Diode) configured to emit a blue light and a phosphor configured to emit a yellow light by receiving a light of the light emitting element so as to be excited, and that is configured to emit a white light by mixing of these light emission colors (for example, refer to PTL 1).
  • LED Light Emitting Diode
  • a phosphor configured to emit a yellow light by receiving a light of the light emitting element so as to be excited, and that is configured to emit a white light by mixing of these light emission colors
  • the light emitting device disclosed in PTL 1 is configured such that a granular phosphor is included in an epoxy resin to be arranged around a light emitting element configured to emit a blue light, so that a white light is emitted by mixing of an emission light of the light emitting element itself and a yellow light emitted from the phosphor.
  • the problem is variation in characteristics of the light emitting device, the variation being generated by that variation in light emission characteristics due to input electric power to the element, and variation in characteristics of a phosphor in accordance with temperature increase affect each other
  • a phosphor has an inherent quantum efficiency (a conversion efficiency from an excitation light to a fluorescent light) and temperature quenching characteristics (characteristics that the quantum efficiency is reduced in accordance with temperature increase). If the quantum efficiency is high, a light emitting device with a higher brightness using the phosphor can be obtained, and if the temperature quenching characteristics are excellent, the phosphor can be used for a light emitting device with a higher output. In addition, if variation in an emission spectrum to an excitation wavelength is small, a light emitting device with a smaller characteristics variation can be fabricated.
  • a phosphor as defined in [1] to [5] below is provided so as to achieve the object.
  • a phosphor comprising:
  • single crystals comprising YAG crystals as a mother crystal, wherein the quantum efficiency of the phosphor at 25° C. is not less than 92% when an excitation light wavelength is 460 nm.
  • a phosphor comprising:
  • YAG crystals as a mother crystal, wherein reduction of fluorescence intensity of the phosphor is less than 3% when an excitation light wavelength is 460 nm and a temperature is increased from 25 to 100° C.
  • a phosphor comprising:
  • YAG crystals as a mother crystal, wherein variation of the full width at half maximum (FWHM) of fluorescence spectrum of the phosphor is not more than 1.5 nm when the excitation light wavelength is varied from 460 to 480 nm.
  • FWHM full width at half maximum
  • the phosphor according to any one of [1] to [3], further comprises a first dopant comprised of Gd or Lu and a second dopant comprised of not less than one element selected from the group consisting of Ce, Tb, Eu, Yb, Pr, Tm, and Sm.
  • a light emitting device as defined in [6] to [10] below is provided so as to achieve the object.
  • a light emitting device comprising:
  • a light emitting element configured to emit a bluish light
  • a phosphor configured to emit a yellowish light by using a light of the light emitting element as an excitation light
  • the phosphor comprises single crystals comprising YAG crystals as a mother crystal, wherein the quantum efficiency of the phosphor at 25° C. is not less than 92% when the excitation light wavelength is 460 nm.
  • a light emitting device comprising:
  • a light emitting element configured to emit a bluish light
  • a phosphor configured to emit a yellowish light by using a light of the light emitting element as an excitation light
  • the phosphor comprises YAG crystals as a mother crystal, wherein reduction of fluorescence intensity of the phosphor is less than 3% when an excitation light wavelength is 460 nm and a temperature is increased from 25 to 100° C.
  • a light emitting device comprising:
  • a light emitting element configured to emit a bluish light
  • a phosphor configured to emit a yellowish light by using a light of the light emitting element as an excitation light
  • the phosphor comprises YAG crystals as a mother crystal, wherein variation of the full width at half maximum (FWHM) of fluorescence spectrum of the phosphor is not more than 1.5 nm when the excitation light wavelength is varied from 460 to 480 nm.
  • the phosphor further comprises a first dopant comprised of Gd or Lu and a second dopant comprised of not less than one element selected from the group consisting of Ce, Tb, Eu, Yb, Pr, Tm, and Sm.
  • a method for manufacturing a phosphor as defined in [11] below is provided so as to achieve the object.
  • a method for manufacturing a phosphor by Czochralski method comprising:
  • a phosphor excellent in a quantum efficiency, a method for manufacturing the same, and a light emitting device using the phosphor can be provided.
  • a phosphor excellent in temperature quenching characteristics, a method for manufacturing the same, and a light emitting device using the phosphor can be provided.
  • a phosphor configured such that variation in an emission spectrum is small in a wider range to an excitation wavelength, a method for manufacturing the same, and a light emitting device using the phosphor can be provided.
  • FIG. 3 is a graph showing an excitation spectrum of the phosphor according to the first embodiment and a conventional ceramic powder phosphor.
  • FIG. 4A is a graph showing a powder X-ray diffraction pattern of the phosphor according to the first embodiment.
  • FIG. 5 is a cross-sectional view schematically showing a pulling up of YAG single crystal phosphor by CZ method.
  • FIG. 6A is a cross-sectional view showing a light emitting device according to a second embodiment.
  • FIG. 6B is a cross-sectional view showing a light emitting element and the peripheral part thereof constituting the light emitting device according to the second embodiment.
  • FIG. 7A is a cross-sectional view showing a light emitting device according to a third embodiment.
  • FIG. 7B is a cross-sectional view showing a light emitting element constituting the light emitting device according to the third embodiment.
  • FIG. 7C is a plan view showing the light emitting element according to the third embodiment.
  • FIG. 8 is a cross-sectional view showing a light emitting device according to a fourth embodiment.
  • FIG. 9 is a cross-sectional view showing a light emitting device according to a fifth embodiment.
  • FIG. 10A is a cross-sectional view showing a light emitting device according to a sixth embodiment.
  • FIG. 10B is a cross-sectional view showing the light emitting element constituting the light emitting device according to the sixth embodiment.
  • FIG. 11 is a cross-sectional view showing a light emitting device according to a seventh embodiment.
  • a part of atoms constituting the composition of the above-mentioned phosphor may occupy a different position on a crystal structure.
  • the concentration quenching is a phenomenon that energy transfer between molecules adjacent to each other occurs and original energy is not sufficiently emitted toward outside as a fluorescence, namely, non-light emission transition or the like occurs, thereby a fluorescence intensity does not increase dependent on increase in the concentration of the activator.
  • the phosphor according to the embodiment has excellent quantum efficiency.
  • the quantum efficiency at 25° C. is not less than 92% at an excitation light wavelength of 460 nm.
  • the quantum efficiency is 97% at an excitation light wavelength of 460 nm.
  • the quantum efficiency of not less than 92% can be obtained at an excitation light wavelength of 460 nm.
  • the upper line is near a horizontal line, and the temperature dependency of the fluorescence intensity of the phosphor according to the embodiment is small.
  • reduction of the fluorescence intensity of the phosphor according to the embodiment when the temperature is increased from 25 to 100° C. can be approximated to less than 1%, and it is clearly known to be less than 3%.
  • the fluorescence spectrum of the phosphor according to the embodiment when the excitation light wavelength is 460 nm and 480 nm and the fluorescence spectrum of the conventional ceramic powder phosphor when the excitation light wavelength is 460 nm and 480 nm are shown.
  • variation of the full width at half maximum (FWHM) (width of a part in which the relative fluorescence intensity is 0.5) of the fluorescence spectrum when the excitation light wavelength is varied from 460 nm to 480 nm is 1.5 nm, while in the conventional ceramic powder phosphor, the variation is 2.7 nm.
  • W1 and W2 in FIG. 2 respectively show the full width at half maximum (FWHM) of the fluorescence spectrum of the phosphor according to the embodiment when the excitation light wavelength is 460 nm and 480 nm.
  • FIG. 3 is a graph an excitation spectrum measured at 570 nm of the phosphor according to the first embodiment and the conventional ceramic powder phosphor as Comparative Example.
  • the horizontal axis of FIG. 3 represents an excitation wavelength [nm] and the vertical axis represents a fluorescence intensity (relative value).
  • an excitation range of the phosphor according to the embodiment is less than an excitation range of the conventional ceramic powder phosphor, and an advantageous effect of preventing a loss due to re-excitation can be expected.
  • the full width at half maximum (FWHM) W5 of the excitation spectrum of the phosphor according to the embodiment is approximately 69 nm, and is less than the full width at half maximum (FWHM) W6 of the excitation spectrum of the conventional ceramic powder phosphor, W6 being approximately 83 nm.
  • FIG. 4A and FIG. 4B are respectively a graph showing a powder X-ray diffraction pattern of the phosphor according to the first embodiment and the conventional ceramic powder phosphor as Comparative Example.
  • the horizontal axis of FIG. 4A and FIG. 4B represents a diffraction angle and the vertical axis represents a diffraction intensity.
  • Peaks indicated by arrows in the diffraction pattern of FIG. 4B are peaks due to the second phase other than the garnet structure. Namely, in the conventional ceramic powder phosphor, the second phase other than the garnet structure is included. On the other hand, as shown in FIG. 4A , in the X-ray diffraction pattern of the phosphor according to the embodiment, the peaks due to the second phase are not observed, and it can be said that the phosphor according to the embodiment is a single phase.
  • YAG single crystal phosphor including Ce, Gd is grown by Czochralski Method (CZ method).
  • high purity (not less than 99.99%) powders of Y 2 O 3 , Al 2 O 3 , CeO 2 , Gd 2 O 3 are prepared as starting materials, dry mixing is carried out, so as to obtain mixed powders. Further, raw powders of Y, Al, Ce, and Gd are not limited to the above-mentioned compounds.
  • Y 2 O 3 powder, Al 2 O 3 powder, Gd 2 O 3 powder, CeO 2 powder are mixed in a molar ratio of 2.91:5:0.03:0.12.
  • FIG. 5 is a cross-sectional view schematically showing a pulling up of YAG single crystal phosphor by CZ method.
  • a crystal growth device 80 mainly includes a crucible 81 comprised of iridium, a cylindrical container 82 comprised of ceramics configured to accommodate the crucible 81 , and a high frequency coil 83 configured to be wound around the cylindrical container 82 .
  • the mixed powders obtained are put into the crucible 81 , an inducted current is generated in the crucible 81 by the high frequency coil 83 at high frequencies of 30 kW in a nitrogen atmosphere, and the crucible 81 is heated. By this, the mixed powders are melted and a melt 90 is obtained.
  • a seed crystal 91 of YAG single crystal is prepared, after the tip thereof is dipped in the melt 90 , YAG single crystal phosphor 92 is pulled up toward ⁇ 111> direction, at a pull-up speed of not more than 1 mm/h, and at a pull-up temperature of not less than 1960° C., while the seed crystal 91 is rotated at a rotation speed of 10 rpm.
  • the pulling-up of YAG single crystal phosphor 92 is carried out in such a way that nitrogen is poured into the cylindrical container 82 at a flow rate of 2 L per minute, under atmospheric pressure, and in a nitrogen atmosphere.
  • YAG single crystal phosphor 92 having a diameter of an approximately 2.5 cm and a length of approximately 5 cm is obtained.
  • YAG single crystal phosphor 92 is cut out to a desired size, thereby, for example, a single crystal phosphor having a plate-like shape that is used for a light emitting device can be obtained. In addition, YAG single crystal phosphor 92 is crushed, thereby a granular phosphor can be obtained.
  • YAG single crystal phosphor 92 can be grown by using CeO 2 as a raw material of Ce.
  • Ce In order to exert functions as a phosphor, it is required that Ce is included in YAG crystal in a trivalent state, thus it is considered that it is easier to incorporate Ce into YAG crystal in a trivalent state by using Ce 2 O 3 or Ce organic compound in which Ce is included in a trivalent state as the starting material, than by using Ce 2 O 3 in which Ce is included in a tetravalent state as the starting material.
  • Ce 2 O 3 or Ce organic compound has a defect of being extremely expensive in comparison with CeO 2 . According to the manufacturing method, even if CeO 2 is used, Ce can be added to the crystal in a trivalent state, thus a phosphor can be manufactured at a low cost.
  • the second embodiment of the invention is a light emitting device using the phosphor according to the phosphor according to the embodiment.
  • the second embodiment will be explained referring to FIG. 6A and FIG. 6B .
  • FIG. 6A is a cross-sectional view showing a light emitting device 1 according to the second embodiment
  • FIG. 6B is a cross-sectional view showing a light emitting element 10 and the peripheral part thereof constituting the light emitting device 1 .
  • the light emitting device 1 is configured to include the light emitting element 10 comprised of LED, the phosphor 2 comprised of a single single crystal disposed in such a manner that the light emission surface of the light emitting element 10 is covered, the ceramic substrate 3 of Al 2 O 3 or the like supporting the light emitting element 10 and the main body 4 comprised of a white resin and the transparent resin 8 sealing the light emitting element 10 and the phosphor 2 .
  • the ceramic substrate 3 has wiring parts 31 , 32 , for example, pattern-formed by a metal such as tungsten.
  • the wiring parts 31 , 32 are electrically connected to the n-side electrode 15 A and the p-side electrode 15 B (described below) of the light emitting element 10 .
  • the main body 4 is formed on the ceramic substrate 3 , and the opening part 4 A is formed in the center part thereof.
  • the opening part 4 A is formed in a tapered shape that the opening width gradually becomes large from the side of the ceramic substrate 3 toward the outside.
  • the inner surface of the opening part 4 A is configured to be the reflection surface 40 configured to reflect the emission light of the light emitting element 10 toward the outside.
  • the light emitting element 10 is mounted on the ceramic substrate 3 in such a way that the n-side electrode 15 A and the p-side electrode 15 B thereof are connected to the wiring parts 31 , 32 of the ceramic substrate 3 via bumps 16 , 16 .
  • the phosphor 2 is arranged so as to cover the whole of the second main substrate 11 b .
  • the phosphor 2 is comprised of YAG-based phosphor according to the first embodiment.
  • the phosphor 2 is configured such that the first surface 2 a facing the element substrate 11 is directly brought into contact with the element substrate 11 without interposing other members between the second main substrate 11 b of the element substrate 11 .
  • the phosphor 2 and the element substrate 11 are connected by intermolecular force.
  • the light emitting element 10 When electric power is fed to the light emitting element 10 configured as described above, electrons are poured into the light emitting layer 13 via the wiring part 31 , the n-side electrode 15 A and the n-type GaN layer 12 , and positive holes are poured into the light emitting layer 13 via the wiring part 32 , the p-side electrode 15 B and the p-type GaN layer 14 , so that the light emitting layer 13 emits a light.
  • the blue emission light of the light emitting layer 13 passes through the n-type GaN layer 12 and the element substrate 11 so as to be emitted from the second main substrate 11 b of the element substrate 11 and be inputted into the first surface 2 a of the phosphor 2 .
  • a part of the light inputted from the first surface 2 a excites electrons in the phosphor 2 as an excitation light.
  • the phosphor 2 absorbs a part of the bluish light from the light emitting element 10 , and wavelength-converts the absorbed light to, for example, a yellowish light having a peak of quantity of light at a wavelength of 500 to 630 nm.
  • a part of the bluish light inputted into the phosphor 2 is absorbed in the phosphor 2 and is wavelength-converted so as to be emitted from the second surface 2 b of the phosphor 2 as a yellowish light.
  • a remaining part of the light inputted into the phosphor 2 is not absorbed in the phosphor 2 and is emitted from the second surface 2 b of the phosphor 2 .
  • a blue light and a yellow light have a complementary color relation, thus the light emitting device 1 emits a white light obtained by mixing a blue light and a yellow light.
  • FIG. 7A is a cross-sectional view showing a light emitting device 1 A according to the third embodiment
  • FIG. 7B is a cross-sectional view showing a light emitting element 10 A constituting the light emitting device 1 A according to the third embodiment
  • FIG. 7C is a plan view showing the light emitting element 10 A.
  • a part of the light inputted into the phosphor 21 from the first surface 21 a excites electrons in the phosphor 21 as an excitation light.
  • the phosphor 21 absorbs a part of the blue light from the light emitting element 10 A, and wavelength-converts the absorbed light mainly to a yellow light.
  • the phosphor 21 absorbs a bluish light having a light emission peak at a wavelength of 380 to 490 nm from the light emitting element 10 A, and emits a yellowish light having a light emission peak at a wavelength of 500 to 630 nm.
  • a part of the blue light inputted into the phosphor 21 is absorbed in the phosphor 21 and is wavelength-converted so as to be emitted from the second surface 21 b of the phosphor 21 as a yellow light.
  • a remaining part of the light inputted into the phosphor 21 is not absorbed in the phosphor 21 and is emitted from the second surface 21 b of the phosphor 21 as it is.
  • a blue light and a yellow light have a complementary color relation, thus the light emitting device 1 A emits a white light obtained by mixing a blue light and a yellow light.
  • the light emitting device 1 B according to the embodiment has the same configuration as the configuration of the light emitting device 1 according to the second embodiment, that the emission light of the light emitting element is inputted into the phosphor comprised of a single single crystal so as to carry out the wavelength-conversion, but has a different configuration from the second embodiment in the arrangement position of the phosphor.
  • the same reference signs as used in the second or third embodiment will be used, and the explanation will be omitted.
  • the light emitting device 1 B includes the light emitting element 10 that has the same configuration as the second embodiment on the ceramic substrate 3 .
  • the light emitting element 10 emits a blue light from the second main substrate 11 b of the element substrate 11 (refer to FIG. 6B ) located in the side of the opening part 4 A of the main body 4 toward the side of the opening part 4 A of the main body 4 .
  • a part of the blue light inputted into the phosphor 22 is absorbed in the phosphor 22 and is wavelength-converted so as to be emitted from the second surface 22 b of the phosphor 22 as a yellow light.
  • a remaining part of the light inputted into the phosphor 22 is not absorbed in the phosphor 22 and is emitted from the second surface 22 b of the phosphor 22 .
  • a blue light and a yellow light have a complementary color relation, thus the light emitting device 1 B emits a white light obtained by mixing a blue light and a yellow light.
  • the transparent substrate 6 is comprised of a resin having translucency such as s silicone resin, an acrylic resin, a PET, or a member having translucency comprised of single crystals or polycrystals such as glass-like substance, sapphire, ceramics, quarts, so as to have translucency that allows the emission light of the light emitting element 10 A to be transmitted and insulation.
  • a part of the wiring parts 61 , 62 is connected to the transparent substrate 6 . Intervals between the p-side electrode and the n-side electrode of the light emitting element 10 A, and one end part of the wiring parts 61 , 62 are electrically connected by the bonding wires 611 , 621 . Another end part of the wiring parts 61 , 62 is pulled out to the outside of the main body 5 .
  • the Ga 2 O 3 substrate 70 is comprised of ⁇ -Ga 2 O 3 that shows a conductive type of n-type.
  • the MQW layer 74 is a light emitting layer that has a multiple quantum well structure of InGaN/GaN.
  • the p-electrode 77 is a transparent electrode comprised of ITO (Indium Tin Oxide), and is electrically connected to the wiring part 32 .
  • the n-electrode 78 is connected to the wiring part 31 of the ceramic substrate 3 by the bonding wire 321 .
  • SiC can be used instead of ⁇ -Ga 2 O 3 .

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  • Luminescent Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
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CN107180906A (zh) 2017-09-19
JP2018021206A (ja) 2018-02-08
CN107180906B (zh) 2021-05-28
US20180044588A1 (en) 2018-02-15
JP2015004071A (ja) 2015-01-08
EP3470495A1 (fr) 2019-04-17
JP6241002B2 (ja) 2017-12-06
EP2843026A4 (fr) 2016-03-23
JPWO2013161683A1 (ja) 2015-12-24
CN104245883A (zh) 2014-12-24
EP3470495B1 (fr) 2022-08-24
EP2843026A1 (fr) 2015-03-04
US10836961B2 (en) 2020-11-17
JP6578588B2 (ja) 2019-09-25
CN104245883B (zh) 2017-06-27
EP2843026B1 (fr) 2019-02-27
JP5649202B2 (ja) 2015-01-07
WO2013161683A1 (fr) 2013-10-31

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