US20150069308A1 - Method for producing semiconductor ceramic composition - Google Patents
Method for producing semiconductor ceramic composition Download PDFInfo
- Publication number
- US20150069308A1 US20150069308A1 US14/395,322 US201314395322A US2015069308A1 US 20150069308 A1 US20150069308 A1 US 20150069308A1 US 201314395322 A US201314395322 A US 201314395322A US 2015069308 A1 US2015069308 A1 US 2015069308A1
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- raw material
- semiconductor ceramic
- ceramic composition
- temperature
- tio
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
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- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
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- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/475—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on bismuth titanates
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- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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- C04B35/62605—Treating the starting powders individually or as mixtures
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- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
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Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012096546 | 2012-04-20 | ||
JP2012-096546 | 2012-04-20 | ||
JP2012118120 | 2012-05-24 | ||
JP2012-118120 | 2012-05-24 | ||
JP2012-279711 | 2012-12-21 | ||
JP2012279711 | 2012-12-21 | ||
PCT/JP2013/061688 WO2013157650A1 (ja) | 2012-04-20 | 2013-04-19 | 半導体磁器組成物の製造方法 |
Publications (1)
Publication Number | Publication Date |
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US20150069308A1 true US20150069308A1 (en) | 2015-03-12 |
Family
ID=49383595
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/395,568 Expired - Fee Related US9190194B2 (en) | 2012-04-20 | 2013-04-19 | Semiconductor ceramic composition, method for producing the same, and PTC element |
US14/395,322 Abandoned US20150069308A1 (en) | 2012-04-20 | 2013-04-19 | Method for producing semiconductor ceramic composition |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/395,568 Expired - Fee Related US9190194B2 (en) | 2012-04-20 | 2013-04-19 | Semiconductor ceramic composition, method for producing the same, and PTC element |
Country Status (5)
Country | Link |
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US (2) | US9190194B2 (de) |
EP (2) | EP2840073A4 (de) |
JP (2) | JPWO2013157649A1 (de) |
CN (2) | CN104245625B (de) |
WO (2) | WO2013157649A1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140197156A1 (en) * | 2011-10-03 | 2014-07-17 | Hitachi Metals, Ltd. | Semiconductor porcelain composition, positive temperature coefficient element, and heat-generating module |
JPWO2015115421A1 (ja) * | 2014-01-31 | 2017-03-23 | 日立金属株式会社 | 半導体磁器組成物の製造方法、半導体磁器組成物、ptc素子、及び発熱体モジュール |
JPWO2016002714A1 (ja) * | 2014-07-02 | 2017-04-27 | 日立金属株式会社 | 半導体磁器組成物およびptc素子 |
JP2017197389A (ja) * | 2014-09-10 | 2017-11-02 | 日立金属株式会社 | 半導体磁器組成物の製造方法、半導体磁器組成物、並びにptc素子 |
US10490350B2 (en) | 2015-07-17 | 2019-11-26 | Tdk Electronics Ag | Dielectric composition, dielectric element, electronic component and multi-layer electronic component |
CN105036742A (zh) * | 2015-09-10 | 2015-11-11 | 桂林理工大学 | 一种高居里点正温度系数电阻材料Ba3Li3Bi2Nb5O20及其制备方法 |
KR102516759B1 (ko) | 2016-01-05 | 2023-03-31 | 삼성전기주식회사 | 유전체 자기 조성물, 이를 포함하는 적층 세라믹 커패시터 및 적층 세라믹 커패시터의 제조 방법 |
JP2017141117A (ja) * | 2016-02-08 | 2017-08-17 | Tdk株式会社 | 半導体磁器組成物およびptcサーミスタ |
CN105837205A (zh) * | 2016-03-24 | 2016-08-10 | 天津大学 | 一种钛酸铋钠体系无铅压电陶瓷及其制备方法 |
CN109761602B (zh) * | 2019-02-28 | 2020-11-24 | 华中科技大学 | 一种低阻热敏陶瓷材料及其制备方法与应用 |
CN110372372B (zh) * | 2019-07-31 | 2021-12-17 | 贵州大学 | 高温下低介电损耗的钛酸铋钠基无铅压电陶瓷的制备方法 |
TWI740261B (zh) * | 2019-11-04 | 2021-09-21 | 興勤電子工業股份有限公司 | 陶瓷組成物之用途、陶瓷燒結體之用途及熱敏電阻器 |
DE112021003047T5 (de) * | 2020-05-29 | 2023-06-07 | Tdk Electronics Ag | Elektrisches Bauteil mit einem elektrischen Widerstand |
CN114203376B (zh) * | 2021-11-24 | 2023-05-23 | 成都宏明电子股份有限公司 | 负温度系数热敏电阻器瓷料配方确定方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6221800B1 (en) * | 1997-09-05 | 2001-04-24 | Tdk Corporation | Method of producing PTC semiconducting ceramic |
US20100075824A1 (en) * | 2006-10-27 | 2010-03-25 | Takeshi Shimada | Semiconductor ceramic composition and method for producing the same |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56169301A (en) | 1980-06-02 | 1981-12-26 | Tohoku Metal Ind Ltd | Method of producing barium titanate semiconductor porcelain |
JP4217337B2 (ja) * | 1999-03-19 | 2009-01-28 | Tdk株式会社 | 半導体磁器の製造方法 |
JP2000264726A (ja) * | 1999-03-19 | 2000-09-26 | Tdk Corp | 半導体磁器 |
JP5163118B2 (ja) * | 2005-03-31 | 2013-03-13 | 日立金属株式会社 | 半導体磁器組成物の製造方法 |
CN102674831B (zh) * | 2005-04-28 | 2016-01-20 | 日立金属株式会社 | 半导体陶瓷组合物及其制备方法 |
JP5218042B2 (ja) * | 2006-02-27 | 2013-06-26 | 日立金属株式会社 | 半導体磁器組成物 |
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CN102245536B (zh) | 2008-12-12 | 2013-07-31 | 株式会社村田制作所 | 半导体陶瓷以及正特性热敏电阻 |
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- 2013-04-19 JP JP2014511269A patent/JPWO2013157649A1/ja active Pending
- 2013-04-19 EP EP13778500.2A patent/EP2840073A4/de not_active Withdrawn
- 2013-04-19 EP EP13778329.6A patent/EP2840072A4/de not_active Withdrawn
- 2013-04-19 CN CN201380020900.6A patent/CN104245625B/zh not_active Expired - Fee Related
- 2013-04-19 CN CN201380020711.9A patent/CN104302599A/zh active Pending
- 2013-04-19 JP JP2014511270A patent/JPWO2013157650A1/ja active Pending
- 2013-04-19 US US14/395,568 patent/US9190194B2/en not_active Expired - Fee Related
- 2013-04-19 WO PCT/JP2013/061687 patent/WO2013157649A1/ja active Application Filing
- 2013-04-19 WO PCT/JP2013/061688 patent/WO2013157650A1/ja active Application Filing
- 2013-04-19 US US14/395,322 patent/US20150069308A1/en not_active Abandoned
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Also Published As
Publication number | Publication date |
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US20150109094A1 (en) | 2015-04-23 |
JPWO2013157650A1 (ja) | 2015-12-21 |
EP2840073A4 (de) | 2015-11-25 |
EP2840072A4 (de) | 2015-11-25 |
WO2013157649A1 (ja) | 2013-10-24 |
CN104245625B (zh) | 2016-04-06 |
EP2840072A1 (de) | 2015-02-25 |
CN104245625A (zh) | 2014-12-24 |
CN104302599A (zh) | 2015-01-21 |
EP2840073A1 (de) | 2015-02-25 |
JPWO2013157649A1 (ja) | 2015-12-21 |
WO2013157650A1 (ja) | 2013-10-24 |
US9190194B2 (en) | 2015-11-17 |
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