US20140217374A1 - Organic semiconductor material - Google Patents

Organic semiconductor material Download PDF

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US20140217374A1
US20140217374A1 US14/114,892 US201214114892A US2014217374A1 US 20140217374 A1 US20140217374 A1 US 20140217374A1 US 201214114892 A US201214114892 A US 201214114892A US 2014217374 A1 US2014217374 A1 US 2014217374A1
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Manuela Melucci
Laura Favaretto
Massimo Zambianchi
Raffaella Capelli
Michele Muccini
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    • H01L51/0071—
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
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    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/12—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains three hetero rings
    • C07D495/14—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/22—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains four or more hetero rings
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    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D519/00—Heterocyclic compounds containing more than one system of two or more relevant hetero rings condensed among themselves or condensed with a common carbocyclic ring system not provided for in groups C07D453/00 or C07D455/00
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    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
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    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
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    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
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    • H10K10/82—Electrodes
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    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide

Definitions

  • the present invention relates to a novel n-type organic semiconductor material, and semiconductor devices containing said n-type organic semiconductor material.
  • organic semiconductors are materials into which charge can be reversibly introduced by the application of electromagnetic energy or chemical dopants.
  • the electronic conductivity of these materials lies between that of metals and insulators, spanning a broad range of 10 ⁇ 9 to 10 3 ⁇ ⁇ 1 cm ⁇ 1 .
  • organic materials can function either as p-type or n-type. In p-type semiconductors the majority carriers are holes, while in n-type the majority carriers are electrons.
  • n-type organic semiconductor materials including: oligoacenes, fused oligothiophenes, anthradithiophenes, carbazoles, oligophenylenes, and oligofluorenes, some of which have resulted in field-effect transistors with performance superior to amorphous silicon.
  • n-type oligomer and polymer semiconductors have lagged behind p-type materials. In fact, compared to the p-type semiconductors, n-type semiconductors are still not fully developed, and the performances are not satisfactory.
  • Organic semiconductors that possess a high electron affinity are however also required, as both p- and n-channel materials are required for efficient logic circuits and organic solar cells. Indeed, n-type organic field-effect transistors are envisioned as key components of organic p-n junctions, bipolar transistors, and complementary integrated circuits leading to flexible, large-area, and low-cost electronic applications.
  • n-type organic semiconductor materials A variety of organic semiconductors have been considered in the art as n-type organic semiconductor materials.
  • Aromatic tetracarboxylic anhydride and their diimide derivatives were reported among the first n-channel materials.
  • perylenetetracarboxylic diimides having fluorinated side chains showed mobilities up to 0.72 cm 2 V ⁇ 1 s ⁇ 1 , which only slightly decreased upon air exposure.
  • Air stability, packing grain size and morphology of the deposited films as well as electrical performance can be altered by varying side-chain length, insertion of oxygenated groups and degree of fluorination.
  • most of the perylene building blocks due to the structural rigidity and moderate solubility, do not allow readily structural changes limiting the volume of materials accessible.
  • n-type organic materials such as cyanovinyl oligomers, fullerenes.
  • N-type semiconductor materials consisting of oligothiophenes bearing fluorinated side groups have been also described in J. Am. Chem. Soc. 2005, 127, 1348 and Angew. Chem. Int. Ed. 2003, 42, 3900. These oligomers showed mobilities up to 0.43 cm 2 V ⁇ 1 s ⁇ 1 . However, OFETs based on most of these perfluoroaryl and perfluoroalkylaryl substituted materials were unstable in air or suffered from high threshold voltage. Fluorocarbonyl-functionalized oligomers were also described, which showed improved air stability, but lower electron mobilities with respect to fluorinated oligomers.
  • J. Am. Chem. Soc. 2008, 130, 9679-9694 describes N-alkyl-2,2′-bithiophene-3,3′-dicarboximide-based homopolymers and copolymers showing p-type or n-type semiconductor behavior depending on the polymeric structure.
  • no air-stable devices could be achieved with such materials.
  • the poor reactivity of the starting dihalogenated bithiophene-imide compounds limits the accessibility of this class of materials.
  • N-alkylatcd poly(dioxopirrolothiophene)s arc described in Organic Letters 2004, 6, 19, 3381-3384. However, no proof of an efficient n-type behavior in OFET devices is reported.
  • WO2008/127029 relates to dioxypirrolo-heterocyclic compounds having the pyrrole moiety fused to the 3,4 position of the thienyl ring and organic electronic devices using said dioxypirrolo-heterocyclic compounds.
  • WO2006/094292 discloses thienopyridine compounds capable of modulating the stability and/or activity of hypoxia inducible factor, pharmaceutical compositions comprising said compounds and chemical intermediates useful for preparing said compounds.
  • chemical intermediates specific compounds having a 4,6-dioxo-thieno[2,3-c]pyrrole nucleus are disclosed.
  • EP0467206 discloses specific compounds having a 4,6-dioxo-thieno[2,3-c]pyrrole nucleus and their use as herbicide.
  • n-type organic semiconductor means a material that, inserted as active layer in a field effect device architecture with a source, a drain and gate control electrodes, shows an electron mobility higher than 10 ⁇ 7 cm 2 V ⁇ 1 s ⁇ 1 .
  • the compounds according to the present invention may be useful as p-type, n-type or ambipolar organic semiconductor material.
  • the compounds according to the present invention possess high electron mobility properties, excellent stability under atmospheric conditions and are accessible through synthetically easy processes.
  • FIG. 1 a shows normalized absorption of a solution and film of a compound according to the present invention [2,2′-(2,2′-bithiophene-5,5′-diyl)bis(5-butyl-5H-thieno[2,3-c]pyrrole-4,6-dione)];
  • FIG. 1 b shows normalized emission of a solution and film of a compound according to the present invention [2,2′-(2,2′-bithiophene-5,5′-diyl)bis(5-butyl-5H-thieno[2,3-c]pyrrole-4,6-dione)];
  • FIG. 1 c shows the CV curves for said compound according to the present invention [2,2′-(2,2′-bithiophene-5,5′-diyl)bis(5-butyl-5H-thieno[2,3-c]pyrrole-4,6-dione)];
  • FIG. 2 is a DCS thermogram of a compound according to the present invention [2,2′-(2,2′-bithiophene-5,5′-diyl)bis(5-butyl-5H-thieno[2,3-c]pyrrole-4,6-dione)];
  • FIGS. 3 a ), b ), c ), d ), e ) and f ) show POM micrographs of a compound according to the present invention [2,2′-(2,2′-bithiophene-5,5′-diyl)bis(5-butyl-5H-thieno[2,3-c]pyrrole-4,6-dione)] in different phases;
  • FIGS. 4 a ), b ) and c ) show single crystal structure and molecular packing of a compound according to the present invention [2,2′-(2,2′-bithiophene-5,5′-diyl)bis(5-butyl-5H-thieno[2,3-c]pyrrole-4,6-dione)];
  • FIGS. 5 a ), b ) and c ) show AFM images of films of different thicknesses of a compound according to the present invention [2,2′-(2,2′-bithiophene-5,5′-diyl)bis(5-butyl-5H-thieno[2,3-c]pyrrole-4,6-dione)];
  • FIGS. 6 a ), b ) c ) and d ) show XRD patterns of a compound according to the present invention [2,2′-(2,2′-bithiophene-5,5′-diyl)bis(5-butyl-5H-thieno[2,3-c]pyrrole-4,6-dione)] in different forms; and
  • FIGS. 7 a ), b ), c ), d ) and e ) show graphs reporting the optoelectronic features of an OTFT comprising a compound according to the present invention [2,2′-(2,2′-bithiophene-5,5′-diyl)bis(5-butyl-5H-thieno[2,3-c]pyrrole-4,6-dione)] as semiconductor layer.
  • R 1 , R 2 , R 2′ independently of each other, are selected in the group consisting of hydrogen, C 1 -C 40 linear or branched alkyl groups, C 1 -C 40 linear or branched heteroalkyl groups, C 3 -C 40 linear or branched cycloalkyl groups, C 1 -C 40 linear or branched hydroxyalkyl groups, C 1 -C 40 linear or branched alkoxyl groups, C 1 -C 40 linear or branched alkylcarboxylic groups, C 1 -C 40 linear or branched alkylcarboxyamide groups, C 1 -C 40 linear or branched alkylsulphonic groups, and C 1 -C 40 linear or branched nitrile groups;
  • Ar is selected in the group consisting of monocyclic aryl groups, polycyclic aryl groups, monocyclic heteroaryl groups and polycyclic heteroaryl groups;
  • Ar′, Ar′′ independently of each other, arc moieties selected in the group consisting of a monocyclic aryl groups, polycyclic aryl groups, monocyclic heteroaryl groups and polycyclic heteroaryl groups;
  • n, r, independently of each other are integers between 1 and 50;
  • p is an integer between 0 and 5;
  • the value of p is preferably 0, 1 or 2.
  • n and r are preferably comprised between 2 and 50, more preferably between 2 and 30, even more preferably between 2 and 10.
  • n is particularly preferably comprised between 2 and 50, more preferably between 2 and 30, even more preferably between 2 and 10.
  • R 1 , R 2 , Ar, Ar′ and n are as above defined.
  • the bond line crossing the thiophene double bond in formulas (III), (IIIa), (IV) and (IVa) indicates that the (Ar′) n moiety may be bound to any of the 2 or 3 position in the thiophene ring and is not fused thereto.
  • the (Ar′) n moiety is bound to the 2 position of the thiophene ring.
  • the bond line crossing the square parenthesis in formulas (I) and (III) is intended to indicate the position of binding of the various repeating units of the polymer.
  • the repeating unit indicated within parenthesis is also one of the terminal units of the polymer.
  • the (Ar′) n moiety may be bound to any position of the Ar moiety that is fused to the imidothiophene unit.
  • Ar′ is a thiophene unit or substituted thiophene unit.
  • Ar′ is a unit selected among the following (a), (b), (c):
  • W is selected in the group consisting of S, SO and SO 2 ;
  • Y is selected in the group consisting of S, O, NR 8 ;
  • R 6 , R 7 , and R 8 independently of each other, are selected in the group consisting of hydrogen, C 1 -C 12 linear or branched alkyl groups, C 1 -C 12 linear or branched halogenoalkyl groups, C 3 -C 12 linear or branched cycloalkyl groups, C 1 -C 12 linear or branched hydroxyalkyl groups, C 1 -C 12 linear or branched alkoxyl groups, C 1 -C 12 linear or branched alkylcarboxylic groups, C 1 -C 12 linear or branched alkylcarboxyamide groups, C 1 -C 12 linear or branched alkylsulphonic groups, and C 1 -C 12 linear or branched nitrile groups.
  • the (Ar′) n moiety is a linear chain of ⁇ -linked thiophene units.
  • n is preferably comprised between 1 and 30, more preferably between 2 and 30, even more preferably between 2 and 10.
  • n 2
  • n 2
  • solvents for example dichloromethane, dimethyl sulfoxide, tetrahydrofuran.
  • the Ar moiety fused to the imidothiophene unit of the compounds of formulas (I), (Ia), (II), and (IIa) according to the present invention may be advantageously formed of one, two or three aromatic rings.
  • Ar is selected in the group consisting of the following rings (f), (g), (h), (i), (l), (m), (n), (o), (p):
  • X is selected in the group consisting of S, O, Si, Se, NR 3 ,
  • R 3 is selected in the group consisting of C 1 -C 12 linear or branched alkyl groups, C 1 -C 12 linear or branched halogenoalkyl groups, C 3 -C 12 linear or branched cycloalkyl groups, C 1 -C 12 linear or branched hydroxyalkyl groups, C 1 -C 12 linear or branched alkoxyl groups, C 1 -C 12 linear or branched alkylcarboxylic groups, C 1 -C 12 linear or branched alkylcarboxyamide groups, C 1 -C 12 linear or branched alkylsulphonic groups, and C 1 -C 12 linear or branched nitrile groups.
  • R 1 , R 2 independently of each other, arc selected in the group consisting of C 1 -C 12 linear or branched alkyl groups, C 1 -C 12 linear or branched heteroalkyl groups, C 3 -C 12 linear or branched cycloalkyl groups, C 1 -C 12 linear or branched hydroxyalkyl groups, C 1 -C 12 linear or branched alkoxyl groups, C 1 -C 12 linear or branched alkylcarboxylic groups, C 1 -C 12 linear or branched alkylcarboxyamide groups, C 1 -C 12 linear or branched alkylsulphonic groups, and C 1 -C 12 linear or branched nitrile groups.
  • R 1 , R 2 independently of each other, are selected in the group consisting of C 1 -C 12 linear or branched saturated alkyl groups, C 1 -C 12 linear or branched fluoroalkyl groups, C 1 -C 12 linear or branched heteroalkyl groups comprising a heteroatom selected among O, S, N.
  • R 1 is the same as R 2 .
  • a linear ⁇ -linked oligothiophene di-imide compound of formula (V) is provided:
  • R 4 , R 5 are selected in the group consisting of C 1 -C 8 linear or branched saturated alkyl groups, C 1 -C 8 linear or branched fluoroalkyl groups, C 1 -C 8 linear or branched heteroalkyl groups comprising a heteroatom selected among O, S, N; and
  • n 1 and 50.
  • m is comprised between 1 and 30, more preferably between 2 and 30, even more preferably, m is comprised between 2 and 10.
  • R 4 , R 5 are as above defined with reference to formula (V).
  • R 4 , R 5 are as above defined with reference to formula (V).
  • the compound of formula (VII) derives from general formula (IV) wherein p is equal to 1; n and r are equal to 2; Ar′ and Ar′′ are thiophene, R 1 and R 2 are R 5 ; and R 2′ is R 4 .
  • the imido-thiophene moiety allows for the combination of the strong electron-withdrawing effect of the carboxylic groups, which contributes in lowering the LUMO energy level of the final oligomer, to the chemical versatility, robustness and plasticity of the thienyl ring. This allows the realization of novel ⁇ -conjugated materials with high electron affinities comparable to the currently more performing n-type semiconducting organic materials.
  • the imide moieties can be easily fused to the thienyl ring, as described below.
  • the imido-thiophene moiety can easily be mono- or dihalogenated to realize linear oligomers.
  • N-substitution particularly with linear, branched alkyl, heteroalkyl and perfluoroalkyl chains can be easily achieved by standard chemistry and exploited to tune solubility, self-organization and optoelectronic properties.
  • the thiophene-imide moiety can be coupled to selected ⁇ -conjugated cores by cross-couplings under conventional or microwave-assisted methods as described below.
  • the easy accessibility of the compounds according to the invention also allows an easy modification of the oligomer size, and degree and type of molecular functionalization, which in turn permits to tailor the compounds properties as a function of the particular requirements of the desired application.
  • the compounds according to the present invention can be obtained with electronic level of purity by chromatography, crystallization and sublimation, with unambiguous molecular structure determination through classic analytical methods.
  • this class of materials can be prepared with high reproducibility from batch to batch, which is crucial to achieve devices with reproducible responses.
  • they can be adapted to solution processing by inserting tailored alkyl or alkoxy-chains as N-substituents.
  • Another advantage of the compounds according to the present invention consists in its high self-organization capability and order in thin films, due to their chemical structure comprising an imide moiety as alpha-end-substituent rather than beta inner substituent.
  • a process for the production of a compound according to the invention comprises: subjecting a reaction mixture comprising a reaction medium and an halogenated aromatic halide to: a Stille coupling reaction with an organtin compound; or to a Suzuki coupling reaction with an organoboron compound.
  • the processes according to the present invention are preferably catalized by palladium.
  • Z is selected among halogen atoms, such as Br, I; M is an organometal compound such as B(OR′) 2 and SnR′′ 3 ; and [cat] is a palladium based catalyst.
  • Z is selected among halogen atoms, such as Br, T; M is an organometal compound such as B(OR′) 2 and SnR′′ 3 ; and [cat] is a palladium based catalyst.
  • halogen atoms such as Br, T
  • M is an organometal compound such as B(OR′) 2 and SnR′′ 3
  • [cat] is a palladium based catalyst.
  • tetrakis triphenylphosphine palladium (0) can be used as catalyst.
  • the molecular symmetry of the compounds affects the self-organization motifs and morphology of the molecules in the solid state, thus the final functional properties.
  • the symmetry of the final compounds can be controlled by changing the synthetic approach.
  • Cross-coupling reaction between mono-halogenated thiophene-imide unit and monometallic species lead to asymmetric systems (Ia) and (IIIa).
  • bimetallic species a symmetric system can be obtained, provided that the N-substituting radical R 1 and R 2 are the same.
  • This scheme outlines the preparation of compound 12 according to the present invention, a thiophene based oligomer in which the aromatic core Ar′ consists of a 2,2′-bithiophene, the N-substituent is a n-butyl group and the terminals are symmetric imide moieties.
  • Two synthetic routes to the target oligomer have been developed and are depicted the above Scheme 6.
  • the first method is based on the Stille cross coupling reaction between a bistannyl-bithiophene 8 and the brominated thiophene-imide block 7 under conventional heating.
  • the second route consists of microwave assisted one-pot borylation-Suzuki coupling starting from the brominated thiophene-imide-thiophene dimer.
  • the thiophene-imide starting unit 6 can be prepared by the corresponding anhydride 4, following prior art processes. Bromination of 6 can be achieved under harsh conditions by using a mixture of trifluoroacetic and sulphuric acids. Following Stille cross-coupling of compound 7 with tributhylstannilthiophene 9, leads to the dimer 10 in satisfying yield, which can be then brominated under conventional halogenations reaction conditions to give 11 in satisfying yield.
  • the target oligomer compound 12 can be then prepared by one-pot microwave assisted borylation/Suzuki coupling reactions by using bispinacol borate as borylating agent and PdCl 2 dppf as Pd [0] source.
  • Compound 12 shows good solubility in common organic solvents (i.e. dichloromethane, toluene, tetrahydrofuran) allowing for solution processing.
  • the purification to electronic grade material can be achieved by repeated vacuum sublimation.
  • the present invention relates to a semiconductor material, comprising at least one compound according to formulas (I); (II); (III); or (IV).
  • said semiconductor material comprises at least one compound according to formulas (Ia); (IIa); (IIIa); or (IVa).
  • said semiconductor material comprises at least one compound according to formulas (V), (VI) or (VII).
  • said semiconductor material comprises compound 12.
  • the invention relates to an electronic device comprising a semiconductor layer in contact with a number of electrodes, wherein the semiconductor layer includes at least one compound according to formulas (I); (II); (III); or (IV).
  • the semiconductor layer includes at least one compound according to formulas (I); (II); (III); or (IV).
  • said semiconductor layer comprises at least one compound according to formulas (Ia); (IIa); (IIIa); or (IVa). More preferably, said semiconductor layer, comprises at least one compound according to formulas (V), (VI) or (VII).
  • said semiconductor layer comprises compound 12.
  • said electronic device comprising a semiconductor layer including the compounds according to the present invention is selected among optical devices, electrooptical devices, field effect transistors, integrated circuit, thin film transistors, organic light-emitting devices, and organic solar cells.
  • thin films of the thiophene-imide based materials according to the invention can be used as active layers in OFETs and OLET devices as demonstrated in the following examples. They can be used as electron- or hole-transporting layer or ambipolar transporters in single layer OFET, as multifunctional electron- and hole-transporting and light emitting layer in single layer OLET, and as hole or electron transporting layer in multi-layer OLET.
  • microwave experiments were carried out in a Milestone Microsynth Labstation operating at 2450 MHz monitored by a proprietary control unit.
  • the oven was equipped with magnetic stirring, pressure and temperature sensors. Reactions were performed in a glass vessel (capacity 10 mL) sealed with a septum.
  • the microwave method was power controlled and the samples were irradiated with the required power output (setting at the maximum power) to achieve the desired temperature. All 1 H NMR, 13 C NMR spectra were recorded at room temperature on a Varian Mercury-400 spectrometer equipped with a 5-mm probe. Flash chromatography was carried out using silica gel (200-300 mesh ASTM).
  • UV-vis and fluorescence (PL) spectra of 2,2′-(2,2′-bithiophene-5,5′-diyl)bis(5-butyl-5H-thieno[2,3-c]pyrrole-4,6-dione) (compound 12) were recorded with a JASCO V-550 spectrophotometer.
  • Photoluminescence was excited using a CW He—Cd laser at 440 nm with 20 mW power.
  • PL excitation was truncated with a GG450 cut-off filter without modulating the PL spectra.
  • PL emission was collected with a calibrated optical multichannel analyzer (PMA-11, Hamamatsu).
  • Redox potentials of 2,2′-(2,2′-bithiophene-5,5′-diyl)bis(5-butyl-5H-thieno[2,3-c]pyrrole-4,6-dione), 12 have been measured at room temperature on 1.5 mmol ⁇ 1 ⁇ 1 solution in CH 2 Cl 2 (Carlo Erba RPE, distilled over P 2 O 5 and stored under Ar pressure) with 0.1 mmol ⁇ 1 ⁇ 1 (C 4 H 9 ) 4 NClO 4 (Fluka, puriss. crystallized from CH 3 OH and vacuum dried).
  • CVs were performed at scan rates within 0.01 and 0.2 V ⁇ s ⁇ 1 , in a home-made three compartment glass cell under Ar pressure, by using an AMEL electrochemical system model 5000.
  • Working electrode was semi-spherical Pt
  • auxiliary electrode was a Pt wire
  • reference electrode was aqueous KCl Saturated Calomel Electrode (SCE).
  • SCE KCl Saturated Calomel Electrode
  • Correlation coefficient of peak currents vs. ⁇ 1/2 linear fits are >0.997 and the differences of the slopes for the oxidation and reduction peaks are ⁇ 15%, the resulting diffusion coefficient is 2.9 ⁇ 10 ⁇ 3 cm 2 s ⁇ 1 .
  • Spectroscopic and ciclovoltammetry data are summarized in Table 1 and are compared to those of hexyl substituted quaterthiophene (T4Hex) and to those of the known thiophene-based n-type organic semiconductor ⁇ , ⁇ -diperfluorohexyltetrathiophene (DFH-4T).
  • Table 1 shows that the ionization potential of the new compound 2,2′-(2,2′-bithiophene-5,5′-diyl)bis(5-butyl-5H-thieno[2,3-c]pyrrole-4,6-dione) appears close to that of DFH-4T but the electron affinity is likely 0.3 eV higher. Consequently, the energy-gap results smaller.
  • DSC Differential scanning calorimetry
  • Hot stage polarized microscopy was performed by using a Nikon Eclipse 80i optical microscope was used for optical measurements. The images were recorded with a digital color camera Nikon Coolpix 5400. Glass substrate were furnished by Knittel gläser and were washed with Acetone spectroscopic grade before use. Powder samples were sandwiched between two untreated glass plates.
  • FIG. 3( a ) shows that the optical texture of the compound in form of crystalline needles at RT;
  • FIG. 3( b ) shows transition to an LC phase between 198-280° C.;
  • FIG. 3( c ) shows mosaic texture at 280° C.;
  • FIG. 3( d ) shows nematic droplets between 290° C. and 295° C. before melting to isotropic phase;
  • FIG. 3( e ) shows crystalline domains growing from the melt;
  • FIG. 3( f ) shows crystalline phase at 260° C. on cooling to RT.
  • the image of the micrographs is size 800 ⁇ m ⁇ 800 ⁇ m.
  • POM analysis of compound 12 according to the invention shows a marked increase in birefringence and fluidity in the range 198° C.-280° C. ( FIG. 3 b ), but a mesophase texture can be seen immediately before the melting to isotropic liquid at 295° C. In fact, a mosaic texture ( FIG. 3 c ) which evolves into nematic droplets ( FIG. 3 d ) can be seen in the range 280-290° C. On cooling the melt, nucleation occurred at about 270° C. across the phase transition ( FIG. 3 e ), and leads to crystalline domains that persist to room temperature ( FIG. 3 f ). In thiophene oligomers melt-quenching have already proven to be a powerful method to enhance the molecular order of solution processed films and to promote charge transport in OFET.
  • the collected frames were then processed for integration by the SAINT program, and an empirical absorption correction was applied using SADABS.
  • the structures were solved by direct methods (SIR 97) and subsequent Fourier syntheses and refined by full-matrix least-squares on F 2 (SHELXTL), using anisotropic thermal parameters for all non-hydrogen atoms.
  • the molecular structure of 2,2′-(2,2′-bithiophene-5,5′-diyl)bis(5-butyl-5H-thieno[2,3-c]pyrrole-4,6-dione), (compound 12) shown in FIG. 4 a illustrates that the molecule lies on a crystallographic inversion center located at the midpoint of the bond between the two thiophene units.
  • the molecular backbone is almost planar being the two inner thiophene rings strictly coplanar and the dihedral angles between the thiophene and the thiophene-diimide units 4.4(5)°.
  • the crystal packing of compound 12 shows that the molecules adopt a slipped ⁇ - ⁇ stacking packing mode (interplanar distance ca. 3.51 ⁇ , sliding along the long molecular axis 3.32 ⁇ ) instead of the herringbone structure more common for oligothiophenes.
  • the molecules of adjacent ⁇ - ⁇ stacks are engaged in supramolecular 1D networks running across the be plane formed through two intermolecular C—H . . . O H bonds (H11B . . . O1 2.54 ⁇ , C11 . . . O1 3.48(1) ⁇ , C11-H11B . . .
  • Thin films for surface morphology characterization has been grown by vacuum sublimation in a home-made vacuum chamber, with a deposition rate of 0.1 ⁇ /s, at a base pressure of 10 ⁇ 6 mbar.
  • the films were formed on glass/ITO/PMMA (450 nm) supports.
  • RMS 3 nm
  • OFT organic thin film transistor
  • the ITO substrate cleaning procedure used consist of two sonication cycles, in acetone first and 2-isopropanol then, for 10 minutes each.
  • the PMMA film was then thermally annealed in a glove box at 120° C. (around 10° C. above the glass transition temperature for PMMA) for 15 hours under inert atmosphere.
  • the 30 nm thick layer of 2,2′-(2,2′-bithiophene-5,5′-diyl)bis(5-butyl-5H-thieno[2,3-c]pyrrole-4,6-dione) has been grown by vacuum sublimation in a home-made vacuum chamber, with a deposition rate of 0.1 ⁇ /s, at a base pressure of 10 ⁇ 6 mbar.
  • Gold source-drain contacts are then deposited on top of the organic film, properly masked to form a 70 ⁇ m length and a 15 mm width channel.
  • the substrate temperature during the film deposition has been kept at room temperature (RT).
  • the electrical measurements are performed by means of a Suss PM5 professional probe station connected with an Agilent B1500A parametric analyzer located inside a dry inert glove box.
  • the probe station has been equipped with a Hamamatsu S1337 photodiode with an active area of 1 cm 2 , located under the OTFT channel, in order to collect the electroluminescence originating from the working device. Further device features were:
  • the electrical response of the fabricated OTFT has been measured in nitrogen controlled atmosphere, using a commercial probe station Suss PM5 professional probe station equipped with a photodiode in order to collect possible electroluminescence originating from the working device.
  • the probe station is integrated with a B1500 Agilent parametric analyzer. The obtained results consist in the graphs reported in FIG. 7 .

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