US20140183050A1 - Tin or tin alloy plating liquid - Google Patents

Tin or tin alloy plating liquid Download PDF

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Publication number
US20140183050A1
US20140183050A1 US14/142,443 US201314142443A US2014183050A1 US 20140183050 A1 US20140183050 A1 US 20140183050A1 US 201314142443 A US201314142443 A US 201314142443A US 2014183050 A1 US2014183050 A1 US 2014183050A1
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Prior art keywords
tin
substituted
tin alloy
alkyl
cyclo
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US14/142,443
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English (en)
Inventor
Hiroki Okada
Li SHENGHUA
Makoto Kondo
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Rohm and Haas Electronic Materials LLC
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Rohm and Haas Electronic Materials LLC
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Publication of US20140183050A1 publication Critical patent/US20140183050A1/en
Priority to US14/972,349 priority Critical patent/US9926637B2/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4007—Surface contacts, e.g. bumps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1605—Process or apparatus coating on selected surface areas by masking
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0302—Properties and characteristics in general
    • H05K2201/0305—Solder used for other purposes than connections between PCB or components, e.g. for filling vias or for programmable patterns
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0364—Conductor shape
    • H05K2201/0367—Metallic bump or raised conductor not used as solder bump
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/095—Conductive through-holes or vias
    • H05K2201/09563—Metal filled via
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/187—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating means therefor, e.g. baths, apparatus
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

Definitions

  • This invention relates to a tin or tin alloy electroplating liquid which is suitable for via filling which deposits tin or a tin alloy selectively in a via, and a method for via filling using the liquid.
  • this invention relates to the tin or tin alloy electroplating liquid which is suitable to be used for the method for bump forming in the bonding of electronic components and includes the via fill process, and also which relates to a bump including tin or a tin alloy formed by the plating liquid.
  • a bump that include tin or a tin alloy which is used for electrical connections between a chip and a circuit substrate when bonding a semiconductor integrated circuit (LSI) chip onto a circuit substrate.
  • LSI semiconductor integrated circuit
  • Via filling is also used for the case of forming the solder bumps on the electrode terminals of the LSI chip, and the above mentioned problem of via filling has been occurring in bump forming too.
  • solder ball is placed on the electrode, or solder paste is applied by a screen print or coating methods have been developed.
  • solder ball method the solder ball must be accurately placed on an individual electrode and this is a nuisance.
  • the electrode pitch becomes narrower, it becomes technically more difficult.
  • screen print method the solder paste is printed using a mask, therefore, in the same way it is difficult to accurately form the bump on an individual pad that is configured with the above mentioned narrow pitch.
  • Kokai Patent No. 2000-094179 describes a method in which the solder paste that includes solder powder is coated on the substrate that has the electrode and the solder is melted by heating the substrate, thus the solder bump is formed selectively on the electrode.
  • the paste-like composition is coated on the substrate, localized unevenness in the thickness or concentration occurs, so that differences occur in the amount of solder deposited per electrode or the bumps of uniform height cannot be obtained and this was a problem.
  • U.S. Pat. No. 7,098,126 describes a method in which a mask layer is placed on the circuit plate that includes at least one contact region, and the pattern formation is done and the pad is exposed, and the metal seed layer is deposited on the entire surface of the substrate by physical vapor deposition, chemical vapor deposition, electroless plating or electroplating, and the resist layer is formed on the metal seed layer, and an opening is formed at a position on the contact pad, and the solder material is deposited at the opening by electroplating, thus via filling is done. The resist and the metal seed layer that is directly under the resist are removed, thus the solder bump is formed on the substrate.
  • solder material that is formed at the opening by electroplating is an alloy that contains lead, tin, silver, copper, bismuth, etc., but the method to solve the above mentioned problem of via filling and the composition of the plating liquid are not disclosed at all.
  • Kokai Patent No. 2012-506628 describes a method in which the substrate has a surface which contains at least one prepared contact region, and the solder mask layer, with which the pattern forming is done, is formed and the contact region is exposed, and the entire substrate region that includes the solder mask layer and the contact region is contacted with a solution that is suitable to provide the conductive layer. Tin or tin alloy electroplating is conducted on the conductive layer and the contact region is via filled. The tin or tin alloy plated layer of the solder mask region and the conductive layer are removed and the solder bump is formed on the substrate.
  • 2012-506628 discloses a composition as the tin or tin alloy plating liquid, that includes a tin ion source, an acid, an antioxidant, and a leveling agent that can be selected from aromatic aldehydes, aromatic ketones and ⁇ / ⁇ unsaturated carboxylic acids.
  • a tin ion source that includes a tin ion source, an acid, an antioxidant, and a leveling agent that can be selected from aromatic aldehydes, aromatic ketones and ⁇ / ⁇ unsaturated carboxylic acids.
  • the tin plating liquid that uses an ⁇ / ⁇ unsaturated carboxylic acid, an ⁇ / ⁇ unsaturated ester or an ⁇ / ⁇ unsaturated acid anhydride cannot obtain a sufficient via fill effect (from now on, this will be called the leveling effect) in which the plate is selectively deposited in the indented part.
  • the tin plating liquid that uses an aromatic aldehyde or an aromatic ketone has a problems that burns, dendrites and powder on the formed plated film surface so that a practical and good appearance cannot be obtained and the film characteristics such as soldering ability or color change resistance are poor.
  • the main objective of this invention is to provide a tin or tin alloy plating liquid with which a sufficient deposit of plating can be formed in the opening without causing burns on the plated film surface or abnormal deposits, and which can form a sufficient deposit of plating on the opening, and which has a good via fill effect.
  • This invention also provides a method for forming the bumps that contain tin or tin alloy which includes the via filling process using the above mentioned tin or tin alloy plating liquid of this invention, and also to provide bumps that can be formed by using this method.
  • this invention offers at least the following (i)-(iv):
  • R 1 is selected from the group consisting of hydrogen atoms; halogen atom; substituted or non-substituted C 1 -C 20 alkyl groups; C 2 -C 20 alkenyl groups; C 4 -C 20 dienyl groups; C 3 -C 20 cyclo alkyl groups; C 3 -C 20 cyclo alkenyl groups; and C 4 -C 20 cyclo dienyl groups; and the amino groups that can be indicated by —NR 5 R 6 , where R 5 and R 6 are each independently hydrogen atoms or substituted or non substituted C 1 -C 20 alkyl groups; R 2 , R 3 and R 4 are independently selected from the group consisting of hydrogen atoms; halogen atoms; substituted or non-substituted C 1 -C 20 alkyl groups; C 2 -C 20 alkenyl groups; C 4 -C 20 dienyl groups; C 3 -C 20 cyclo alkyl groups; C 3
  • R 1 is an amino group having formula —NR 5 R 6
  • the above mentioned ring is hetero ring in which R 5 or R 6 are bonded with R 3
  • the above mentioned ring may be a hetero ring that has one oxygen atom between the carbonyl carbon and R 1 .
  • the tin or tin alloy plating liquid of this invention is the plating liquid that exhibits a high via fill effect.
  • the plating liquid of this invention the plating is deposited selectively in the indented part, therefore, the deposition of plating which is free of void spaces can be obtained.
  • the tin or tin alloy plating liquid of this invention the plated film surface does not experience burns or abnormal deposits, therefore, the plated film which has excellent soldering ability and excellent color change resistance and which is practical and has a good appearance can be obtained.
  • the plating liquid of this invention have good via filling ability, therefore, the column-like plating deposition which do not have voids can be formed.
  • FIG. 1 is the bright vision field microscope photo of the via cross section that was made in Example 1.
  • FIG. 2 is the bright vision field microscope photo of the via cross section that was made in Comparison 1.
  • plating liquid and “plating bath” are used interchangeably. ° C. is centigrade degree, g/L is gram per litter, mL/L is milliliter per litter, ⁇ m is micro meter, m/min is meter per minute, A/dm 2 is amps/per square decimeter. All numerical ranges are inclusive and combinable in any order, except where it is logical that such numerical ranges are constrained to add up to 100%.
  • This invention is the tin or tin alloy electroplating liquid characterized by containing the compound of the following general formula (1).
  • R 1 can be chosen from hydrogen atoms; halogen atoms; substituted or non-substituted C 1 -C 20 alkyl groups; C 2 -C 20 alkenyl groups; C 4 -C 20 dienyl groups; C 3 -C 20 cyclo alkyl groups; C 3 -C 20 cyclo alkenyl groups; and C 4 -C 20 cyclo dienyl groups; and the amino groups represented by —NR 5 R 6 .
  • R 5 and R 6 can be each independently hydrogen atoms or substituted or non substituted C 1 -C 20 alkyl groups.
  • R 2 -R 4 can be each independently chosen from hydrogen atoms; halogen atoms; substituted or non-substituted C 1 -C 20 alkyl groups; C 2 -C 20 alkenyl group; C 4 -C 20 dienyl groups; C 3 -C 20 cyclo alkyl groups; C 3 -C 20 cyclo alkenyl groups; and C 4 -C 20 cyclo dienyl groups.
  • R 2 and R 4 , or R 1 and R 3 may be bonded together to form a ring, and the formed ring may have one or more double bonds.
  • R 1 is an amino group that can be indicated by the above mentioned formula —NR 5 R 6
  • the above mentioned ring is a hetero ring in which R 5 or R 6 bonded with R 3 .
  • the above mentioned ring may be a hetero ring that has one oxygen atom between the carbonyl carbon and R 1 .
  • the C 1 -C 20 alkyl groups; C 2 -C 20 alkenyl groups; C 4 -C 20 dienyl groups; C 3 -C 20 cyclo alkyl groups; C 3 -C 20 cyclo alkenyl groups; and C 4 -C 20 cyclo dienyl groups of the above mentioned R 1 -R 4 , and the C 1 -C 20 alkyl groups of R 5 , R 6 can have one or more substitution groups chosen from alkyl groups with 1-9 carbon atoms, alkenyl groups, alkoxy groups, amino groups, halogen atoms, hydroxyl groups, carbonyl groups, and cyano groups.
  • Compounds of general formula (1) include but are not limited to: ⁇ , ⁇ -unsaturated aldehydes; ⁇ , ⁇ -unsaturated ketones; ⁇ , ⁇ -unsaturated halides; ⁇ , ⁇ -unsaturated lactones (cyclic esters); ⁇ , ⁇ -unsaturated amides; and ⁇ , ⁇ -unsaturated lactams (cyclic amides).
  • ⁇ , ⁇ -unsaturated aldehydes and ⁇ , ⁇ -unsaturated ketones are preferred.
  • R 1 is a hydroxyl group, it becomes an ⁇ , ⁇ -unsaturated carboxylic acid, however, the compound has poor via filling ability, therefore it is not included in this invention.
  • ⁇ , ⁇ -unsaturated carboxylic acid anhydrides and ⁇ , ⁇ -unsaturated carboxylic acid esters excluding where the ⁇ , ⁇ -unsaturated carboxylic acid ester is a cyclic ester, have poor via filling ability, therefore they are not included in this invention.
  • the aromatic aldehydes and aromatic ketones which do not have an unsaturated group in the ⁇ , ⁇ position are not included in this invention, because the obtained plated film surface has dendrites, burns or skip plating, and those are not preferred.
  • ⁇ , ⁇ -unsaturated aldehyde is a general name for compounds which have an unsaturated double bond between the a position and the ⁇ position of the carbon atoms looking at it from the carbonyl group, and this is the same for the other ⁇ , ⁇ -unsaturated compounds as well.
  • Examples of compounds covered by the general formula (1) include the compounds shown below:
  • R 7 can be a substituted or non-substituted C 1 -C 40 , C 1 -C 20 , or C 1 -C 10 alkylene, or C 2 -C 40 , C 2 -C 20 or C 2 -C 10 alkene di-yl that has one or more double bonds, and R 7 can have one or more substitution groups chosen from alkyl groups with 1-9 carbon atoms, alkenyl groups, alkoxy groups, amino groups, halogen atoms, hydroxyl groups, carbonyl groups and cyano groups.
  • Compounds of general formula (2) include, but are not limited to the following compounds:
  • the compounds that can be indicated by the general formula (1) may be the structure that can have the following general formula (3) as well.
  • R 8 can be a substituted or non-substituted C 1 -C 40 , C 1 -C 20 , or C 1 -C 10 alkylene, or C 2 -C 40 , C 2 -C 20 or C 2 -C 10 alkene di-yl that has one or more double bonds, and it may form a hetero cycle that includes one or more atoms chosen from nitrogen atoms and oxygen atoms as the hetero atom between the carbonyl carbon and R 1 , and also R 8 can have one or more substitution groups chosen from alkyl groups with 1-9 carbon atoms, alkenyl groups, alkoxy groups, amino groups, halogen atoms, hydroxyl groups, carbonyl groups and cyano groups.
  • ⁇ -ionone 1-acetyl -1-cyclohexene; citral; 4-hexene-3-one; ⁇ -ionone and ⁇ -damascone which are ⁇ , ⁇ -unsaturated aldehydes or ⁇ , ⁇ -unsaturated ketones, are preferred.
  • the ⁇ , ⁇ -unsaturated carbonyl compound that can be indicated by the general formula (1) should be included in the range of 0.0001-10 g/L, preferably 0.0005-5 g/L, more preferably 0.001-1 g/L, and more preferably it should be included in the range of 0.01-0.5 g/L.
  • the tin or tin alloy electroplating liquid of this invention includes a tin ion source and an acid in addition to the above mentioned ⁇ , ⁇ -unsaturated carbonyl compound, and further, it may include a second metal ion source that forms an alloy with tin, and other additives too.
  • Tin ion sources include, but are not limited to tin salts of inorganic acids such as sulfuric acid;, borofluoric acid; silicofluoric acid; sulfamic acid, hydrochloric acid; pyro phosphoric acid, and tin salts or tin complexes of methane sulfonic acid; 2-propanol sulfonic acid; phenol sulfonic acid; sulfo succinic acid; acetic acid; oxalic acid; malonic acid; succinic acid; glycolic acid; tartaric acid; citric acid; gluconic acid; glycine; mercapto succinic acid; ethylene diamine tetra acetic acid; imino di-acetic acid; nitrilo
  • the metallic tin can be used as the anode electrode in electroplating.
  • tin ion sources tin sulfate; tin chloride; tin methane sulfonate and tin phenol sulfonate are preferred.
  • the amount of the tin ion source to be used should be 5-500 g/L, preferably 20-200 g/L as tin ions in the plating liquid.
  • the acid component that is used for the above mentioned tin salt or tin complex can be used.
  • the amount of acid to be used should be 1-500 g/L, preferably 20-200 g/L in the plating liquid.
  • the plating liquid of this invention may include an alloying metallic ion source (second metal ion source) other than tin.
  • the second metal includes but is not limited to: silver; copper; gold; platinum; zinc; nickel; bismuth; indium; thallium; antimony; palladium; rhodium; iridium; and lead.
  • the second metallic ion source inorganic salts, organic salts or complexes of these metals can be used, and for instance, the salts of the acids described in the above mentioned tin salts or tin complexes, can be used. Also, two or more can be used as the second metal ion.
  • the amount of the second metal ion source can vary depending on the type of the plating bath, the type of metal to make the alloy and the alloy composition; however, it should be in the range of 0.1-500 g/L. For instance, in the case of making a near eutectic composition of tin-silver by adding a slight amount of silver into tin, it should be 0.1-3.5 g/L in the plating liquid, and in the case of conducting the plating of a tin-indium alloy with a low melting temperature, it needs to be 1-500 g/L. When two or more metals are used as the second metal ion sources, the same is also true.
  • the plating liquid of this invention can include other additives too.
  • additives include, but are not limited to an antioxidant, a surfactant, a complexing agent, a pH adjusting agent, a brightener, and grain refiners.
  • Antioxidant include, but are not limited to: catechol; resorcinol; hydroquinone; pyrogallol; oxy hydroquinone; fluoro glucine; 3,4,5-tri hydroxy benzoic acid; p-phenol sulfonic acid; cresol sulfonic acid; catechol sulfonic acid; and hydroquinone sulfonic acid.
  • the amount of antioxidant should be 0.01-5 g/L, preferably 0.1-2 g/L, in the plating liquid.
  • Surfactants which may be used are those that solubilize the ⁇ , ⁇ -unsaturated carbonyl compound used in this invention and has the function of restricting deposits at the high current density area.
  • Such surfactants include known cationic surfactants, anionic surfactants, nonionic surfactants and amphoteric surfactants; however, the preferred ones are non-ionic surfactants.
  • Non-ionic surfactants include, but are not limited to poly oxy alkylene alkyl ethers or esters; poly oxy alkylene phenyl ethers; poly oxy alkylene alkyl phenyl ethers; poly oxy alkylene naphthyl ethers; poly oxy alkylene alkyl naphthol ethers; poly oxy alkylene styrenated phenyl ethers or poly oxy alkylene styrenated phenyl ether where a poly oxy alkylene chain is further added onto the said phenyl group; poly oxy alkylene bis phenol ethers; poly oxy ethylene poly oxy propylene block polymers; poly oxy alkylene sorbitan fatty acid esters; poly oxy alkylene sorbit fatty acid esters; poly ethylene glycol fatty acid esters; poly oxy alkylene glycerin fatty acid esters; poly oxy alkylene alkyl amines; poly
  • a complexing agent is suitable especially when making the tin alloy plating liquid for dissolving a second metal.
  • Complexing agents include, but are not limited to: thiourea; allyl thiourea; and 3,6-di-thiaoctane-1,8-diol.
  • the amount to be used should be 0.01-50 g/L, preferably 0.1-10 g/L.
  • the tin or tin alloy plating liquid of this invention has a good effect for via filling.
  • the plated film tends to be formed on outer surfaces other than the indented part, and only very thin plate is formed in the indented part, or the surface is closed even though the deposition of plating is insufficient in the indented part and the plated film with void spaces tends to be formed.
  • the plating liquid of this invention is used, the plating is deposited selectively in the indented part; therefore, the deposited plating which practically does not have void spaces can be obtained.
  • the plating liquid of this invention is suitable for bump formation which includes via filling processes, and for forming tin and tin alloy bumps.
  • One embodiment of the method of this invention is the method for filling vias on the surface of the material to be plated with the plating deposit. It is characterized by electroplating using the tin or tin alloy plating liquid of this invention.
  • the material to be plated has at least one via formed, and the size is not limited.
  • the method of this invention preferably fills vias which have diameters from 10-100 ⁇ m with depths of 10-100 ⁇ m.
  • the material to be plated includes but is not limited to electric substrates and electronic components such as semiconductor chips. Substrates that have electrodes are preferred since sufficient plated deposit can be formed on the opened part provided in the electrode position on the substrate.
  • Another embodiment of this invention is the method to form bumps that contain tin or tin alloy on the substrate. This embodiment includes the following processes:
  • the protection layer is the layer which is formed prior to the plating on the place where the deposit should not be made on the substrate, and both the layer that is peeled after the plate deposit is formed (this is also called a resist), and the layer that will remain without being peeled, are included.
  • any existing method can be used, however, the method which uses a photosensitive resin or a thermosetting resin as the protection layer, is preferred.
  • photosensitive resin means a resin that reacts with various light sources such as visible light, UV, X- rays or electron beams The resin becomes soluble or insoluble in the developing solution, and either the negative type or positive type can be used.
  • the opening can be formed by a laser or other conventional process.
  • a barrier layer is formed on the contact pad, and the solder mask is formed on the places where the plate deposit is not necessary, and the patterning is done, and the barrier layer on the contact pad is exposed, and after the metal conductive layer is formed by physical vapor deposition (PVD), chemical vapor deposition (CVD), or electro or electroless plating beforehand, the patterning is done using the resist and the opening is formed. Also, as was described in Kokai patent No. 2012-506628, using the negative type photoresist, the solder mask layer is exposed and the opening is formed, and thereafter, the conductive layer is formed on the entire body of the opening and the solder mask layer.
  • the above mentioned opening can be any size, however, generally, it is a via of which the diameter is 10-100 ⁇ m, and the depth is 10-100 ⁇ m. It is preferred that the conductive layer is formed at least on the bottom part of the opening of the protection layer before electroplating using the plating liquid of this invention.
  • the above mentioned conductive layer can be the layer that is comprised of copper; tin; cobalt; tin- lead alloy; chromium-copper alloy; titanium/nickel (bi-metal), tin/copper; chromium/chromium-copper alloy/copper; or nickel/tin/copper.
  • the conductive layer can be formed by PVD or CVD, or electroless plating or electroplating. For instance, after the catalyst that contains noble metal ions such as palladium is attached, the electroless copper plating or nickel electroplating is is done to form the conductive layer.
  • the bump that contains tin or a tin alloy is formed by using the above mentioned tin or tin alloy plating liquid. As was described above, the plating liquid of this invention exhibits good via fill performance, therefore, it can form a column-like deposit which practically does not have voids.
  • the bump that contains tin or a tin alloy means the bump of which the main component is tin or a tin alloy, and for instance, it may be the bump comprised of two layers where the foundation of the bump is made first by another metal plating liquid, and on top of this, the tin or tin alloy column is formed, or it may be the one in which the bump containing two layers is reflowed and both are mixed as one body.
  • the bump means a protrusion that is formed on the semiconductor chip or substrate, and it becomes the terminal to connect the semiconductor chip and substrate.
  • the bump can be of any size. Typically the diameter is from 10-100 ⁇ m, and the height is from 10-100 ⁇ m.
  • the tin and the second metal that forms the alloy are the metals that were previously described above for the tin alloy plating liquid.
  • the content of the second metal should be 0.1-50%, preferably 1-5% with the remainder tin.
  • a copper clad FR4 substrate was submerged in the pre-treatment liquid (CIRCUBONDTM 187 treatment solution available from Dow Electronic Materials, Marlborough, Mass.) for 2 minutes at 45° C., and the copper clad surface was made rough.
  • CIRCUBONDTM 187 treatment solution available from Dow Electronic Materials, Marlborough, Mass.
  • a photosensitive insulation resin MultiPositTM 9500cc photosensitive resin available from Dow Electronic Materials
  • the evaluation substrate was submerged in 10 mL/L of a methane sulfonic acid solution (70% solution) for 1 minute, and the surface was activated. Thereafter, it was washed with de-ionized water for 2 minutes, and using this evaluation substrate as the cathode, electroplating was conducted for 11 minutes at 1A/dm 2 using the above mentioned plating liquid while stirring at a speed of 2 m/min. After plating, and after washing with de-ionized water and drying, the via of the substrate was cut, and it was observed with a bright field microscope.
  • a methane sulfonic acid solution 70% solution
  • Example 1 was repeated except that 1-acetyl -1-cyclo hexene was used at 0.12 g/L instead of ⁇ -ionone, and the via cross section was observed.
  • Example 1 was repeated except that citral was used at 0.2 g/L instead of ⁇ -ionone, and surfactant 1 at 0.15 g/L and surfactant 2 ( ⁇ -naphthol ethoxylate, commercial product LugalvanTM BNO 12 available from BASF Co.) at 0.5 g/L were used as the surfactants, and the via cross section was observed.
  • citral was used at 0.2 g/L instead of ⁇ -ionone
  • surfactant 1 at 0.15 g/L
  • surfactant 2 ⁇ -naphthol ethoxylate, commercial product LugalvanTM BNO 12 available from BASF Co.
  • Example 1 was repeated except that 4-hexene-3-one was used at 0.3 g/L instead of ⁇ -ionone, and that the concentration of surfactant 1 was changed to 2 g/L, and the via cross section was observed.
  • Example 1 was repeated except that ⁇ -damascone was used at 0.02 g/L instead of ⁇ -ionone, and that the concentration of surfactant 1 was changed to 0.75 g/L, and the via cross section was observed.
  • Example 1 was repeated except that tin methane sulfonate at 20 g/L and silver methane sulfonate at 0.5 g/L were used as the metal ion sources, and that ⁇ -damascone was used at 0.02 g/L instead of ⁇ -ionone, and 3,6-dithia-1,8-octane diol which has the structure shown below, was used at 2.6 g/L as the complexing agent, and the via cross section was observed.
  • compositions of Examples 1-6, the via fill performance and the appearance are shown in Table 1. Also, a bright field microscopic photo of the cross section of the via that was made in Example 1 is shown in FIG. 1 .
  • Example 1 was repeated except that di-hydro- ⁇ -ionone was used at 0.2 g/L instead of ⁇ -ionone, and the via cross section was observed. Filling of the via was insufficient.
  • Example 1 was repeated except that citronellal having the structure shown below was used at 0.5 g/L instead of ⁇ -ionone, and the via cross section was observed. Filling of the via was insufficient.
  • Example 1 was repeated except that the acetone having the structure shown below was used at 1 g/L instead of ⁇ -ionone, and the via cross section was observed. Filling of the via was insufficient.
  • Example 1 was repeated except that the methacrylic acid having the structure shown below was used at 1 g/L instead of ⁇ -ionone, and surfactant 2 was used at 7 g/L, and the via cross section was observed. Filling of the via was insufficient.
  • Example 1 was repeated except that benzaldehyde was used at 0.025 g/L instead of ⁇ -ionone, and surfactant 2 was used at 7 g/L instead of surfactant 1, and the via cross section was observed.
  • the via was filled but many areas of skip plating and burns were observed and it was insufficient for practical use.
  • Example 1 was repeated except that 3-chloro acetophenone was used at 0.3 g/L instead of ⁇ -ionone, and the via cross section was observed. The via was filled but many areas of skip plating and burns were observed and it was insufficient for practical use.
  • Comparisons 1-6 The compositions of Comparisons 1-6 and the results (via fill performance and appearance) are shown in Table 2. Also, a bright field microscopic photo of the cross section of the via made in Comparison 1 is shown in FIG. 2 .

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US9546433B1 (en) * 2015-11-24 2017-01-17 International Business Machines Corporation Separation of alpha emitting species from plating baths
US10030315B2 (en) 2015-11-24 2018-07-24 International Business Machines Corporation Separation of alpha emitting species from plating baths
WO2022129238A1 (fr) 2020-12-18 2022-06-23 Basf Se Composition pour dépôt électrolytique d'étain ou d'alliage d'étain comprenant un agent d'étalement
WO2024022979A1 (fr) 2022-07-26 2024-02-01 Basf Se Composition pour le placage électrolytique d'étain ou d'alliage d'étain comprenant un agent d'étalement

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KR20180024765A (ko) * 2016-08-31 2018-03-08 주식회사 호진플라텍 전기도금을 이용한 주석-비스무트-납 삼원합금 솔더 조성물
EP3562974B1 (fr) * 2016-12-28 2020-10-07 ATOTECH Deutschland GmbH Bain de placage d'étain et procédé de dépôt d'étain ou d'alliage d'étain sur une surface d'un substrat
CN107675209A (zh) * 2017-10-18 2018-02-09 江西理工大学 一种绿色环保锡电解精炼电解液
JP6620859B2 (ja) 2017-10-24 2019-12-18 三菱マテリアル株式会社 錫又は錫合金めっき堆積層の形成方法
JP6620858B2 (ja) 2017-10-24 2019-12-18 三菱マテリアル株式会社 錫又は錫合金めっき堆積層の形成方法
WO2019082884A1 (fr) 2017-10-24 2019-05-02 三菱マテリアル株式会社 Solution de placage d'étain ou d'alliage d'étain
US11268203B2 (en) 2017-10-24 2022-03-08 Mitsubishi Materials Corporation Tin or tin alloy plating solution
US11053600B2 (en) 2018-03-20 2021-07-06 Mitsubishi Materials Corporation Tin or tin alloy plating solution and bump forming method
WO2019181905A1 (fr) 2018-03-20 2019-09-26 三菱マテリアル株式会社 Liquide de placage d'étain ou d'alliage d'étain, procédé de formation de bosse et procédé de production de carte de circuit imprimé
EP3781729A1 (fr) * 2018-04-20 2021-02-24 Basf Se Composition destinée à un électroplacage d'étain ou d'alliage d'étain comprenant un agent suppresseur
CN109457273A (zh) * 2018-12-28 2019-03-12 江西理工大学 一种绿色环保型锡电解精炼电解液
CN115003863A (zh) 2020-01-27 2022-09-02 三菱综合材料株式会社 锡或锡合金电镀液、凸点的形成方法及电路基板的制造方法
EP4150684A4 (fr) * 2020-05-11 2024-06-05 Colorado State University Research Foundation Dépôt électrolytique de snsb à phase pure à partir d'une solution éthaline eutectique pour des anodes de batterie au lithium-ion
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US9425164B1 (en) 2015-11-24 2016-08-23 International Business Machines Corporation Low alpha tin
US9546433B1 (en) * 2015-11-24 2017-01-17 International Business Machines Corporation Separation of alpha emitting species from plating baths
US10030315B2 (en) 2015-11-24 2018-07-24 International Business Machines Corporation Separation of alpha emitting species from plating baths
US10138568B2 (en) 2015-11-24 2018-11-27 International Business Machines Corporation Separation of alpha emitting species from plating baths
US10167568B2 (en) 2015-11-24 2019-01-01 International Business Machines Corporation Separation of alpha emitting species from plating baths
US10287698B2 (en) 2015-11-24 2019-05-14 International Business Machines Corporation Separation of alpha emitting species from plating baths
US10287702B2 (en) 2015-11-24 2019-05-14 International Business Machines Corporation Separation of alpha emitting species from plating baths
US10458033B2 (en) 2015-11-24 2019-10-29 International Business Machines Corporation Separation of alpha emitting species from plating baths
US10577703B2 (en) 2015-11-24 2020-03-03 International Business Machines Corporation Separation of alpha emitting species from plating baths
WO2022129238A1 (fr) 2020-12-18 2022-06-23 Basf Se Composition pour dépôt électrolytique d'étain ou d'alliage d'étain comprenant un agent d'étalement
WO2024022979A1 (fr) 2022-07-26 2024-02-01 Basf Se Composition pour le placage électrolytique d'étain ou d'alliage d'étain comprenant un agent d'étalement

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