US20130149463A1 - Method of manufacturing patterned graphene film - Google Patents

Method of manufacturing patterned graphene film Download PDF

Info

Publication number
US20130149463A1
US20130149463A1 US13/805,407 US201213805407A US2013149463A1 US 20130149463 A1 US20130149463 A1 US 20130149463A1 US 201213805407 A US201213805407 A US 201213805407A US 2013149463 A1 US2013149463 A1 US 2013149463A1
Authority
US
United States
Prior art keywords
film
graphene
patterned
photoresist layer
beam resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/805,407
Other languages
English (en)
Inventor
Feng Zhang
Tianming DAI
Qi Yao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Assigned to BOE TECHNOLOGY GROUP CO., LTD. reassignment BOE TECHNOLOGY GROUP CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: Dai, Tianming, YAO, QI, ZHANG, FENG
Publication of US20130149463A1 publication Critical patent/US20130149463A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/06—Coating on selected surface areas, e.g. using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only

Definitions

  • Embodiments of the invention relate to a method of manufacturing a patterned graphene film.
  • Graphene is a two-dimensional crystal formed by arranging carbon atoms in a honeycomb-like form.
  • graphene and its related devices have became a research focus in the fields of physics, chemistry, biology and material science due to its quantum transport characteristic, high conductivity, high mobility and high transmittance.
  • Graphene has been used to manufacture various devices such as field-effect transistor, solar cell, nano-generator, sensor and the like.
  • Graphene film may be obtained by many different methods, such as a mechanical stripping method, a chemical vapor deposition method, a method of thermal decomposition of SiC substrate, a chemical method and the like.
  • a carbon source such as CH 4 is firstly heated to about 1000V and decomposed in a vacuum chamber, and then the graphene film is obtained on a metal foil of Ni, Cu and the like.
  • Si atoms on the surface of the SiC substrate are removed after the SiC substrate is heated to about 1300° C., and then the remaining C atoms spontaneously recombine with each other to form the graphene film.
  • the graphene film generally needs to be patterned.
  • the following methods are employed to pattern the graphene film.
  • a patterned catalyst film is prepared and used to grow patterned graphene film, then the patterned graphene film is transferred to a substrate for forming the electronic devices. This method can not precisely provide the patterned graphene film onto the substrate.
  • a graphene film with a large size is transferred to the substrate for forming the electronic devices and then patterned by an etching process.
  • This method may employ an oxygen plasma etching process and this process may generate irradiation damages on the graphene film and other portions of the devices.
  • a stamper is employed to stamp the patterned graphene film onto the substrate for forming the electronic devices.
  • it is needed to prepare stampers of different patterns in order to form graphene film of different patterns, thus the manufacture cost is high.
  • a method of manufacturing a patterned graphene film comprises the following steps: Step 1: a photoresist layer/electron-beam resist layer is coated on a substrate and patterned, the photoresist layer/electron-beam resist layer in a region for forming the patterned graphene film is removed; Step 2: a solution of oxidized graphene is coated on the substrate formed with the photoresist layer/electro-beam resist layer patterned in Step 1, so that a film of oxidized graphene is formed; Step 3: the substrate obtained in Step 2 is placed in a hydrazine steam, so that the film of oxidized graphene formed in Step 2 is reduced and a graphene film is obtained; and Step 4: the photoresist layer/electron-beam resist layer and the graphene film on the photoresist layer/electrone-beam resist layer are removed, so that the patterned graphene film is obtained.
  • the patterned photoresist layer/electro-beam resist layer is formed on the substrate so as to manufacture the patterned graphene film.
  • This method has a simpler procedure. a lower cost, and more suitable for large-scale production.
  • this method has no damages on the substrate and thus can be applied to a variety of substrates.
  • FIG. 1 is schematic view showing forming a patterned resist layer on a substrate according to an embodiment of the invention
  • FIG. 2 is schematic view showing coating a solution of oxidized graphene onto the substrate to form a film of oxidized graphene according to the embodiment of the invention
  • FIG. 3 is a schematic view showing forming a patterned graphene film on the substrate according to the embodiment of the invention.
  • FIG. 4 is a flow chart showing a method of manufacturing a patterned graphene film according to an embodiment of the invention.
  • the method of manufacturing the patterned graphene film comprises the following steps.
  • Step 1 a photoresist layer or an electron-beam resist layer 2 is coated on a substrate 1 by a spin-coating method or a blade-coating method, and then patterned by using ultraviolet or electron beam. In this step, the photoresist layer or the electron-beam resist layer in a region for forming the patterned graphene film is removed, as shown in FIG. 1 .
  • the substrate may be formed of glass, metal, quartz, organic film and the like.
  • the organic film may be a PET film, a PS film, a PE film, a PAN film and the like.
  • the photoresist layer or the electron-beam resist layer may have a thickness of 1 ⁇ 10 ⁇ m.
  • the electron-beam resist layer may be formed of PMMA, COP, GeSe, PBS and the like.
  • Step 2 a solution of oxidized graphene is prepared.
  • the solution of oxidized graphene may be prepared as follows: under a condition of ice water bath, mixing graphite, sodium nitrate and concentrated sulfuric acid and stirring; slowly adding potassium permanganate; stirring under 25 ⁇ 40° C. until the resultant solution becomes paste-like; adding de-ionized water and stirring for 10 ⁇ 30 minutes; adding de-ionized water and aqueous hydrogen peroxide solution and stirring for 10 ⁇ 30 minutes; filtering the resultant suspending solution and washing by using dilute hydrochloric acid until SO 4 2 ⁇ is removed; washing by using de-ionized water to remove unwanted hydrochloric acid; performing an ultrasonic treatment and then performing a centrifugal treatment to obtain oxidized graphene; dissolving the resultant oxidized graphene into de-ionized water or an organic solvent in different proportions by an ultrasonic method to obtain the solution of oxidized graphene with different concentrations.
  • the organic solvent may be ethanol, acetone, dimethylfomamide, N-
  • Step 3 the solution of oxidized graphene is coated on the substrate formed with the photoresist layer or electro-beam resist layer patterned in Step 1 by a spin-coating method or a spray-coating method, and then baked under 20 ⁇ 80° C. to form a film of oxidized graphene, as shown in FIG. 2 .
  • Step 4 an aqueous hydrazine solution is heated to 60 ⁇ 90° C. to generate a hydrazine steam, and the substrate obtained in Step 3 is placed into an airtight chamber and steamed by the hydrazine steam for 24 ⁇ 48 hours to reduce the film of oxidized graphene and obtain a graphene film 3 .
  • Step 5 the substrate obtained in Step 4 is immersed into acetone or other stripping solvent for 2 ⁇ 10 minutes to remove the photoresist layer/electron-beam resist layer and the graphene film on the photoresist layer/electrone-beam resist layer to obtain the patterned graphene film, as shown in FIG. 3 .
  • the spin-coating method, the blade-coating method and the spray-coating method described above may be performed by conventional equipments and conditions.
  • the method of manufacturing the patterned graphene film comprises the following steps.
  • Step 1 a PMMA layer 2 with a thickness of 5 ⁇ m is coated on a glass substrate 1 by a spin-coating method, and then patterned by using electron beam. In this step, the PMMA layer in a region for forming the patterned graphene film is removed, as shown in FIG. 1 .
  • Step 2 a solution of oxidized graphene is prepared.
  • the solution of oxidized graphene is prepared as follows: under a condition of ice water bath, mixing 1 g graphite, 0.25 g sodium nitrate and 11.75 ml concentrated sulfuric acid (98%) in a 200 ml beaker and stirring; slowly adding 1.5 g potassium permanganate; stirring under 35° C.
  • Step 3 the solution of oxidized graphene is coated on the substrate formed with the PMMA layer patterned in Step 1 by a spin-coating method, and then baked under 80° C. to form a film of oxidized graphene, as shown in FIG. 2 .
  • Step 4 an aqueous hydrazine solution is heated to 70° C. to generate a hydrazine steam, and the substrate obtained in Step 3 is placed into an airtight chamber and steamed by the hydrazine steam for 48 hours to reduce the film of oxidized graphene and obtain a graphene film 3 .
  • Step 5 the substrate obtained in Step 4 is immersed into acetone for 5 minutes to remove the PMMA layer and the graphene film on the PMMA layer to obtain the patterned graphene film, as shown in FIG. 3 .
  • the method of manufacturing the patterned graphene film comprises the following steps.
  • Step 1 a positive photoresist layer 2 with a thickness of 10 ⁇ m is coated on a substrate 1 formed of PET (polyethylene terephthalate) film by a spin-coating method, and then patterned by using ultraviolet. In this step, the photoresist layer in a region for forming the patterned graphene film is removed, as shown in FIG. 1 .
  • PET polyethylene terephthalate
  • Step 2 a solution of oxidized graphene is prepared.
  • the solution of oxidized graphene is prepared as follows: under a condition of ice water bath, mixing 1.5 g graphite, 0.35 g sodium nitrate and 11.75 ml concentrated sulfuric acid (98%) in a 200 ml beaker and stirring; slowly adding 2.0 g potassium permanganate; stirring under 40° C.
  • Step 3 the solution of oxidized graphene is coated on the substrate formed with the photoresist layer patterned in Step 1 by a spray-coating method, and then baked under 60° C. to form a film of oxidized graphene, as shown in FIG. 2 .
  • an aqueous hydrazine solution is heated to 80° C. to generate a hydrazine steam, and the substrate obtained in Step 3 is placed into an airtight chamber and steamed by the hydrazine steam for 36 hours to reduce the film of oxidized graphene and obtain a graphene film 3 .
  • Step 5 the substrate obtained in Step 4 is immersed into a stripping solvent (SYIC9000 sold by ShangHai XinYang Semiconductor Materials Ltd.) for 10 minutes to remove the photoresist layer and the graphene film on the photoresist layer to obtain the patterned graphene film, as shown in FIG. 3 .
  • a stripping solvent SYIC9000 sold by ShangHai XinYang Semiconductor Materials Ltd.
  • the method of manufacturing the patterned graphene film comprises the following steps.
  • Step 1 a negative photoresist layer 2 with a thickness of 1 ⁇ m is coated on a substrate 1 formed of Al foil by a spin-coating method, and then patterned by using ultraviolet. In this step, the photoresist layer in a region for forming the patterned graphene film is removed, as shown in FIG. 1 .
  • Step 2 a solution of oxidized graphene is prepared.
  • the solution of oxidized graphene is prepared as follows: under a condition of ice water bath, mixing 0.5 g graphite, 0.20 g sodium nitrate and 10.75 ml concentrated sulfuric acid (98%) in a 200 ml beaker and stirring; slowly adding 1.2 g potassium permanganate; stirring under 25° C.
  • Step 3 the solution of oxidized graphene is coated on the substrate formed with the photoresist layer patterned in Step 1 by a spray-coating method, and then baked under 20° C. to form a film of oxidized graphene, as shown in FIG. 2 .
  • Step 4 an aqueous hydrazine solution is heated to 90° C. to generate a hydrazine steam, and the substrate obtained in Step 3 is placed into an airtight chamber and steamed by the hydrazine steam for 24 hours to reduce the film of oxidized graphene and obtain a graphene film 3 .
  • Step 5 the substrate obtained in Step 4 is immersed into acetone for 2 minutes to remove the photoresist layer and the graphene film on the photoresist layer to obtain the patterned graphene film, as shown in FIG. 3 .
  • the materials for forming the substrate, the types of the resist layer, the concentrations of the solution of oxidized graphene are not limited to those listed above, and they can be selected depending on the practical requirements.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Ceramic Engineering (AREA)
  • Carbon And Carbon Compounds (AREA)
US13/805,407 2011-08-12 2012-08-09 Method of manufacturing patterned graphene film Abandoned US20130149463A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201110231196.1 2011-08-12
CN2011102311961A CN102653454A (zh) 2011-08-12 2011-08-12 一种图案化石墨烯薄膜的制备方法
PCT/CN2012/079873 WO2013023547A1 (zh) 2011-08-12 2012-08-09 图案化石墨烯薄膜的制备方法

Publications (1)

Publication Number Publication Date
US20130149463A1 true US20130149463A1 (en) 2013-06-13

Family

ID=46729202

Family Applications (1)

Application Number Title Priority Date Filing Date
US13/805,407 Abandoned US20130149463A1 (en) 2011-08-12 2012-08-09 Method of manufacturing patterned graphene film

Country Status (3)

Country Link
US (1) US20130149463A1 (zh)
CN (1) CN102653454A (zh)
WO (1) WO2013023547A1 (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130098540A1 (en) * 2011-10-24 2013-04-25 Samsung Electronics Co., Ltd. Graphene-transferring member, graphene transferrer, method of transferring graphene, and methods of fabricating graphene device by using the same
US20150357239A1 (en) * 2014-06-10 2015-12-10 Boe Technology Group Co., Ltd. Method for patterning a graphene layer and method for manufacturing a display substrate
US20180364513A1 (en) * 2017-04-10 2018-12-20 Shenzhen China Star Optoelectronics Technology Co., Ltd. Manufacturing method of graphene electrode and liquid crystal display panel
KR101955671B1 (ko) 2017-03-24 2019-03-07 충남대학교산학협력단 그래핀 또는 그래핀-금속 복합체 박막의 패터닝 방법
CN110165023A (zh) * 2019-06-12 2019-08-23 中国科学院重庆绿色智能技术研究院 一种石墨烯硅复合光电探测器的制备方法
CN111320164A (zh) * 2020-02-28 2020-06-23 南方科技大学 一种悬空石墨烯结构的制备方法及由其得到的悬空石墨烯结构和应用

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103086372B (zh) * 2013-01-24 2015-07-01 东南大学 一种制备大面积石墨烯海绵的方法
CN103280404B (zh) * 2013-05-17 2015-09-30 中国科学院上海微系统与信息技术研究所 一种基于竖直石墨烯的场发射电极的图形化制备方法
CN103435036B (zh) * 2013-08-21 2015-02-04 南开大学 一种石墨烯选择性定点转移方法
CN104576515B (zh) * 2013-11-15 2017-10-13 北京京东方光电科技有限公司 图案化石墨烯薄膜及阵列基板的制作方法、阵列基板
CN103710685B (zh) * 2013-12-24 2016-02-17 同济大学 一种直接在柔性基底上制备石墨烯透明导电薄膜的喷涂方法
CN104945014A (zh) * 2014-03-26 2015-09-30 苏州汉纳材料科技有限公司 基于石墨烯的透明导电薄膜的图案化方法
CN104538396B (zh) * 2015-01-16 2017-06-30 京东方科技集团股份有限公司 半导体层、半导体器件、阵列基板和显示装置的制备方法
CN104655698B (zh) * 2015-02-15 2017-07-25 浙江理工大学 石墨烯/氧化石墨烯微阵列电极及其制备方法与应用
CN105217605B (zh) * 2015-07-20 2018-01-02 合肥国轩高科动力能源有限公司 一种图案化石墨烯的制备方法
CN105589598B (zh) * 2015-12-24 2019-05-17 无锡格菲电子薄膜科技有限公司 一种图案化石墨烯的制造方法
CN105752967B (zh) * 2016-01-29 2018-10-09 白德旭 一种石墨烯导电薄膜的制备方法
CN105948023B (zh) * 2016-04-27 2018-03-20 中国科学院微电子研究所 图形化石墨烯及其制备方法
CN106313287B (zh) * 2016-11-03 2019-04-30 景德镇全球亮科技有限公司 多功能瓷砖及其制造方法
CN107104078A (zh) * 2017-06-06 2017-08-29 深圳市华星光电技术有限公司 石墨烯电极及其图案化制备方法，阵列基板
CN107655856B (zh) * 2017-09-07 2022-04-19 齐鲁工业大学 氧化石墨烯阵列变色薄膜/复合薄膜的制备方法及应用
CN109163653B (zh) * 2018-09-10 2020-06-09 中国工程物理研究院电子工程研究所 一种图案化石墨烯柔性应变传感器的制备方法
CN109741881B (zh) * 2019-01-04 2020-09-04 宁波石墨烯创新中心有限公司 一种石墨烯柔性电极及其制备方法
CN110203881A (zh) * 2019-05-28 2019-09-06 淮阴师范学院 一种由金属辅助的二维材料纳米带的制备方法
CN110406140B (zh) * 2019-08-07 2021-08-03 电子科技大学 基于液膜破裂自组装的柔性电致变色图形化薄膜的制备方法和薄膜
CN112038452B (zh) * 2020-09-10 2023-03-03 哈尔滨工业大学 一种基于紫外光刻工艺的pedot:pss电极的快速图案化刻蚀方法
CN112708401B (zh) * 2020-12-24 2021-07-27 广东工业大学 一种具有微型热结构图案的石墨烯薄膜的加工系统及方法
CN112859514B (zh) * 2021-03-23 2022-10-21 北京科技大学 一种图案化转移石墨炔薄膜的方法
CN113185135A (zh) * 2021-05-25 2021-07-30 陕西科技大学 一种石墨烯涂层导电玻璃的制备方法
CN113533449B (zh) * 2021-07-05 2023-08-25 广西师范大学 一种MXene石墨烯复合结构气体传感器的制备方法
CN114214690B (zh) * 2021-12-27 2023-09-26 宁波南大光电材料有限公司 一种在光刻胶表面镀氧化石墨烯的电镀方法及基板材料

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050077503A1 (en) * 2003-07-23 2005-04-14 Takuya Gotou Dispersion comprising thin particles having a skeleton consisting of carbons, electroconductive coating film, electroconductive composite material, and a process for producing them
US20090235721A1 (en) * 2008-03-20 2009-09-24 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Reduced graphene oxide film
US20100239869A1 (en) * 2009-03-20 2010-09-23 Northwestern University Method of forming a film of graphite oxide single layers, and applications of same
CN101872120A (zh) * 2010-07-01 2010-10-27 北京大学 一种图形化石墨烯的制备方法
US20110057168A1 (en) * 2009-09-10 2011-03-10 Sony Corporation 3-terminal electronic device and 2-terminal electronic device
KR101048490B1 (ko) * 2010-03-29 2011-07-11 성균관대학교산학협력단 할로겐 원소가 포함된 환원제를 포함하는 그래핀옥사이드 환원제, 이에 의한 환원그래핀옥사이드의 제조방법 및 제조된 환원그래핀옥사이드의 용도

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101435999B1 (ko) * 2007-12-07 2014-08-29 삼성전자주식회사 도펀트로 도핑된 산화그라펜의 환원물, 이를 포함하는 박막및 투명전극
WO2010074918A1 (en) * 2008-12-23 2010-07-01 The Trustees Of The University Of Pennsylvania High yield preparation of macroscopic graphene oxide membranes
CN101941694A (zh) * 2010-09-07 2011-01-12 湘潭大学 一种高分散性石墨烯的制备方法
CN102070142B (zh) * 2010-12-14 2012-06-27 四川大学 一种利用化学氧化还原制备石墨烯的方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050077503A1 (en) * 2003-07-23 2005-04-14 Takuya Gotou Dispersion comprising thin particles having a skeleton consisting of carbons, electroconductive coating film, electroconductive composite material, and a process for producing them
US20090235721A1 (en) * 2008-03-20 2009-09-24 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Reduced graphene oxide film
US20100239869A1 (en) * 2009-03-20 2010-09-23 Northwestern University Method of forming a film of graphite oxide single layers, and applications of same
US20110057168A1 (en) * 2009-09-10 2011-03-10 Sony Corporation 3-terminal electronic device and 2-terminal electronic device
KR101048490B1 (ko) * 2010-03-29 2011-07-11 성균관대학교산학협력단 할로겐 원소가 포함된 환원제를 포함하는 그래핀옥사이드 환원제, 이에 의한 환원그래핀옥사이드의 제조방법 및 제조된 환원그래핀옥사이드의 용도
CN101872120A (zh) * 2010-07-01 2010-10-27 北京大学 一种图形化石墨烯的制备方法

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
CN101872120A machine translation, 5/21/2014 *
Gilje et al, A Chemical Route to Graphene for Device Applications, 2007, Nano Letters, Vol. 7 No.11, page 3394-3398 *
Hummers, Preparation of Graphitic Oxide, 1958, J. Am. Chem. Soc, page 1339 *
KR101048490B1 machine translation, 5/21/2014 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130098540A1 (en) * 2011-10-24 2013-04-25 Samsung Electronics Co., Ltd. Graphene-transferring member, graphene transferrer, method of transferring graphene, and methods of fabricating graphene device by using the same
US9214559B2 (en) * 2011-10-24 2015-12-15 Samsung Electronics Co., Ltd. Graphene-transferring member, graphene transferrer, method of transferring graphene, and methods of fabricating graphene device by using the same
US20150357239A1 (en) * 2014-06-10 2015-12-10 Boe Technology Group Co., Ltd. Method for patterning a graphene layer and method for manufacturing a display substrate
US9633899B2 (en) * 2014-06-10 2017-04-25 Boe Technology Group Co., Ltd. Method for patterning a graphene layer and method for manufacturing a display substrate
KR101955671B1 (ko) 2017-03-24 2019-03-07 충남대학교산학협력단 그래핀 또는 그래핀-금속 복합체 박막의 패터닝 방법
US20180364513A1 (en) * 2017-04-10 2018-12-20 Shenzhen China Star Optoelectronics Technology Co., Ltd. Manufacturing method of graphene electrode and liquid crystal display panel
US10634962B2 (en) * 2017-04-10 2020-04-28 Tcl China Star Optoelectronics Technology Co., Ltd. Manufacturing method of graphene electrode and liquid crystal display panel for reducing difficulty of patterning graphene
CN110165023A (zh) * 2019-06-12 2019-08-23 中国科学院重庆绿色智能技术研究院 一种石墨烯硅复合光电探测器的制备方法
CN111320164A (zh) * 2020-02-28 2020-06-23 南方科技大学 一种悬空石墨烯结构的制备方法及由其得到的悬空石墨烯结构和应用

Also Published As

Publication number Publication date
CN102653454A (zh) 2012-09-05
WO2013023547A1 (zh) 2013-02-21

Similar Documents

Publication Publication Date Title
US20130149463A1 (en) Method of manufacturing patterned graphene film
Chen et al. Advances in transferring chemical vapour deposition graphene: a review
He et al. Etching techniques in 2D materials
Yang et al. Removing contaminants from transferred CVD graphene
KR102109380B1 (ko) 절연기판상에 그래핀 단일층을 제조하는 방법
US8431103B2 (en) Method of manufacturing graphene, graphene manufactured by the method, conductive film comprising the graphene, transparent electrode comprising the graphene, and radiating or heating device comprising the graphene
KR102513763B1 (ko) 그래핀의 제조 및 전사 방법
KR101931831B1 (ko) 그래핀 막의 전사 방법 및 투명 도전막의 제조 방법
CN102637584A (zh) 一种图形化石墨烯的转移制备方法
CN109052377B (zh) 一种大面积石墨烯的制备方法
TWI526559B (zh) 藉由物理氣相沉積法在基板上成長碳薄膜或無機材料薄膜的方法
WO2013104141A1 (zh) 一种利用多苯环碳源低温化学气相沉积生长大面积石墨烯的方法
KR101243635B1 (ko) 기판의 제조방법 및 이를 이용한 전자소자의 제조방법
van der Laan et al. Water-mediated and instantaneous transfer of graphene grown at 220 C enabled by a plasma
CN111889112A (zh) 一种MoS2/Graphene二维材料异质结可见光催化剂的制备方法
CN102701600B (zh) 一种制备图案化石墨烯薄膜的方法及石墨烯薄膜
JP2012218967A (ja) グラフェン膜の形成方法
CN103337449A (zh) 硅纳米线阵列的移植及其简单器件制备的方法
CN108314019A (zh) 一种层数均匀的大面积高质量石墨烯薄膜的制备方法
JP6838246B2 (ja) アレイ基板、表示基板の製造方法及びディスプレイパネル
Lee et al. Polyelectrolyte multilayer-assisted fabrication of non-periodic silicon nanocolumn substrates for cellular interface applications
CN107937949B (zh) 制备二维层状垂直异质结的方法
Lu et al. Selective soluble polymer–assisted electrochemical delamination of chemical vapor deposition graphene
Yuan Low-temperature growth of well-aligned ZnO nanowire arrays by chemical bath deposition for hybrid solar cell application
KR20130035617A (ko) 그래핀상의 금속 박막의 형성 방법

Legal Events

Date Code Title Description
AS Assignment

Owner name: BOE TECHNOLOGY GROUP CO., LTD., CHINA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ZHANG, FENG;DAI, TIANMING;YAO, QI;REEL/FRAME:029500/0433

Effective date: 20121026

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION