US20120006490A1 - Plasma Etching Apparatus - Google Patents

Plasma Etching Apparatus Download PDF

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Publication number
US20120006490A1
US20120006490A1 US13/145,228 US200913145228A US2012006490A1 US 20120006490 A1 US20120006490 A1 US 20120006490A1 US 200913145228 A US200913145228 A US 200913145228A US 2012006490 A1 US2012006490 A1 US 2012006490A1
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US
United States
Prior art keywords
plasma
substrate
generating space
plasma generating
platen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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US13/145,228
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English (en)
Inventor
Takashi Yamamoto
Yoshiyuki Nozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPP Technologies Co Ltd
Original Assignee
Sumitomo Precision Products Co Ltd
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Filing date
Publication date
Application filed by Sumitomo Precision Products Co Ltd filed Critical Sumitomo Precision Products Co Ltd
Assigned to SUMITOMO PRECISION PRODUCTS CO., LTD. reassignment SUMITOMO PRECISION PRODUCTS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NOZAWA, YOSHIYUKI, YAMAMOTO, TAKASHI
Publication of US20120006490A1 publication Critical patent/US20120006490A1/en
Assigned to SPP TECHNOLOGIES CO., LTD. reassignment SPP TECHNOLOGIES CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SUMITOMO PRECISION PRODUCTS CO., LTD.
Assigned to SPP TECHNOLOGIES CO., LTD. reassignment SPP TECHNOLOGIES CO., LTD. CHANGE OF ADDRESS Assignors: SPP TECHNOLOGIES CO., LTD. (FORMERLY OF OFFICE TOWER Y 8F, 8-11, HARUMI 1-CHOME, CHUO-KU, TOKYO)
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Definitions

  • the present invention relates to a plasma etching apparatus for etching the surface of a substrate, such as a silicon substrate, a glass substrate and the like, with a plasma generated from an etching gas.
  • a plasma etching apparatus 101 of the prior-art example 1 has a cylindrical chamber 102 having a plasma generating space 109 defined at the upper side and a processing space 110 defined at the lower side, a coil 103 disposed on the outside of the chamber 102 corresponding to the plasma generating space 109 in such a manner that it winds around the chamber 102 , RF power supply means 104 for supplying RF power to the coil 103 , etching gas supply means 105 for supplying an etching gas into the plasma generating space 109 , a platen 106 which is disposed in the processing space 110 and on which a substrate is to be placed, RF power supply means 107 for supplying RF power to the platen 106 , and exhaust means 108 for exhausting the gas within the chamber 102 .
  • an inductive electric field is generated in the plasma generating space 109 by applying RF power to the coli 103 , plasma is generated from an etching gas supplied into the plasma generating space 109 due to this inductive electric field, and a substrate K on the platen 106 is etched by the generated plasma.
  • a plasma etching apparatus 201 of the prior-art example 2 has a chamber 202 , which is similarly formed in a cylindrical shape, comprising a small-diameter portion 202 a at the upper side and a large-diameter portion 202 b at the lower side.
  • a coil 203 is disposed on the outside of the small-diameter portion 202 a in such a manner that it winds around the small-diameter portion 202 a, and the inside of the small-diameter portion 202 a is defined as a plasma generating space 209 .
  • the inside of the large-diameter portion 202 b is defined as a processing space 210 , and a platen 206 on which a substrate is to be placed is disposed in the processing space 210 .
  • RF power supply means 204 supplies RF power to the coil 203
  • RF power supply means 207 supplies RF power to the platen 206
  • etching gas supply means 205 supplies an etching gas into the plasma generating space 209
  • exhaust means 208 exhausts the gas within the chamber 202 .
  • this plasma etching apparatus 201 similarly to the plasma etching apparatus 101 of the prior-art example 1, an inductive electric field is generated in the plasma generating space 209 by applying RF power to the coil 203 , plasma is generated from an etching gas supplied into the plasma generating space 209 due to this inductive electric field, and a substrate K on the platen 206 is etched by the generated plasma.
  • Patent document 1 Japanese Unexamined Patent Application Publication No. 2006-80504.
  • Patent document 2 Japanese Unexamined Patent Application Publication No. 2006-60089.
  • the plasma etching apparatus 101 since the plasma generating space 109 is large, the plasma etching apparatus 101 can be structurally easily adapted to a relatively large substrate.
  • the in-plane density Pm of the plasma generated in the plasma generating space 109 has a concave density distribution in which the density is high at the portion close to the coil 103 and is low at the central portion, and this density distribution acts on the substrate K as it is. Therefore, the surface of the substrate K is not etched uniformly.
  • the etching rate is higher than that at the central portion thereof even if the in-plane density Pm of the plasma is uniform, and therefore the etching is apt to proceed fast. Therefore, in a case where the in-plane density Pm of the plasma has a concave density distribution as described above, the etching at the periphery portion of the substrate K proceeds faster and it is not possible to etch the entire surface of the substrate K uniformly.
  • the high plasma density at the periphery portion of the substrate K causes a problem that when a deep hole, for example, is formed in the substrate K, as shown in FIG. 8 , the periphery of the entrance of a hole 300 is etched by a high density of ions and thereby the entrance is formed into a tapered shape and the surface thereof becomes rough because of sputtering, which results in deterioration of etching shape.
  • the volume of the plasma generating space 209 is small and therefore it is possible to generate high-density plasma even if the RF power applied to the coil 203 is low, and the in-plane density Pm of the plasma has a convex density distribution.
  • the plasma generating space 209 is also made larger corresponding to the increase of the size of the substrate K, a problem similar to that in the case of the plasma etching apparatus 101 described above is caused.
  • the present invention has been achieved in view of the above-described circumstances, and an object thereof is to provide a substrate processing apparatus capable of etching the entire surface of a substrate uniformly even if the substrate is large-sized and capable of preventing a deterioration of shape caused by ions.
  • the present invention for solving the above-described problem, relates to a plasma etching apparatus comprising:
  • a non-conductive chamber which comprises a cylindrical body portion, a top plate for closing the top of the body portion, and a bottom plate for closing the bottom of the body portion, and which has a plasma generating space defined in an upper region in the body portion and a processing space defined below the plasma generating space;
  • a platen which is disposed in the processing space in the chamber and on which a substrate to be processed is to be placed;
  • processing gas supply means for supplying a processing gas into the plasma generating space in the chamber
  • a plasma density adjusting member which comprises a cylindrical member having an opening at the top and an opening at the bottom, and the upper end portion of which is fixed on an inner wall of the chamber between the plasma generating space and the platen, and which adjusts the in-plane density of a plasma generated in the plasma generating space and guides the plasma to a substrate on the platen, wherein
  • this plasma etching apparatus first of all, RF power is applied to the coil by the power supply means for coil. Thereby, an inductive electric field is generated in the plasma generating space in the chamber. Under this condition, when a processing gas is supplied into the plasma generating space by the processing gas supply means, plasma is generated from the supplied processing gas due to the inductive electric field.
  • the in-plane density of the plasma thus generated has a concave density distribution in which the density is high at the periphery portion which is close to the coil and the density is low at the central portion.
  • the plasma having such a concave density distribution flows downward and flows through the cylindrical plasma density adjusting member having an opening at the top and an opening at the bottom, reaches a substrate placed on the platen which is positioned below the plasma density adjusting member, and etches the surface of the substrate.
  • the plasma density adjusting member is formed in a funnel shape the lower end portion of which has an inner diameter smaller than the inner diameter of the upper end portion thereof and than the inner diameter of the body portion forming the plasma generating space, the in-plane density of the plasma which has an extremely concave density distribution is equalized or is adjusted to have a somewhat convex density distribution in reverse by flowing the plasma through the plasma density adjusting member, after which the plasma reaches the substrate.
  • the density of the plasma generated in the plasma generating space is high at the periphery portion thereof, that is, the ion density is also high there, since the plasma density adjusting member of the present invention is made of a conductive material grounded, a high density of ions existing at the periphery portion of the plasma is neutralized by contacting with the plasma density adjusting member while the plasma passes through the plasma density adjusting member, and thereby the ion density at the periphery portion is reduced.
  • an object of the present invention is to etch the entire surface of a substrate uniformly even if the substrate is large-sized, that is, to equalize the etching rate throughout the entire surface of a substrate.
  • the in-plane density of the plasma has a gradual concave density distribution or a gradual convex density distribution depending on various conditions such as mask opening ratio of substrate, substrate size etc.
  • a cylindrical core member at the central portion of the top plate, which core member hangs downward from the top plate to form the plasma generating space in a doughnut shape.
  • the core member is made of a non-conductive material.
  • the core member is made of a conductive material and is provided, ions in the plasma generated in the plasma generating space disappear, and, as a result thereof, the plasma density is reduced.
  • the core member is made of a non-conductive material, it is possible to prevent the reduction of the plasma density.
  • the in-plane density of plasma can be adjusted to become in a most suitable state by flowing the plasma through said plasma density adjusting member, and, as a result thereof, it is possible to etch the entire surface of a substrate uniformly.
  • FIG. 1 is a front sectional view of a plasma etching apparatus according to one embodiment of the present invention
  • FIG. 2 is an illustration for explaining an etching shape obtained when trench etching is performed by the plasma etching apparatus according to the embodiment
  • FIG. 3 is a sectional view of a plasma density adjusting member according to the embodiment.
  • FIG. 4 is a graph relating to an etching rate when etching is performed after adjusting the plasma density using the plasma density adjusting member according to the embodiment
  • FIG. 5 is a graph relating to etching rates when etching is performed after adjusting the plasma density using the plasma density adjusting member according to the embodiment
  • FIG. 6 is a front sectional view of a plasma etching apparatus according to a prior-art example
  • FIG. 7 is a front sectional view of a plasma etching apparatus according to a prior-art example.
  • FIG. 8 is an illustration for explaining an etching shape obtained when trench etching is performed by the plasma etching apparatus according to one of the prior-art examples.
  • a plasma etching apparatus 1 of the embodiment has a chamber 2 comprising a lower body portion 3 , an upper body portion 7 , a bottom plate 4 , an intermediate plate 5 , and a top plate 8 .
  • the lower body portion 3 , the upper body portion 7 , the bottom plate 4 , the intermediate plate 5 and the top plate 8 are each made of a non-conductive material (for example, ceramics), and the upper body portion 7 and the lower body portion 3 are formed in a cylindrical shape.
  • the bottom plate 4 is fixed on the lower end portion of the lower body portion 3 and the intermediate plate 5 is fixed on the upper end portion of the lower body portion 3 , and the lower body portion 3 , the bottom plate 4 and the intermediate plate 5 form a processing space 6 .
  • a platen 10 is disposed on which a substrate K is to be placed and the platen 10 is lifted up and down by an appropriate lifting mechanism.
  • An RF power supply unit 13 is connected to the platen 10 via a matching unit 14 , and RF power is supplied to the platen 10 by the RF power supply unit 13 .
  • the reference numeral 11 indicates a cover covering the outer peripheral portion of the platen 10 and the reference numeral 12 indicates a support for supporting the lifting of the platen 10 .
  • the lower body portion 3 has an opening 3 a for loading and unloading the substrate K and an exhaust port 3 b for exhausting the gas within the processing space 6 formed therein.
  • the opening 3 a is opened and closed by a shutter mechanism 21 , and the exhaust port 3 b is connected to an exhaust device 22 and the gas within the processing space 6 is exhausted by the exhaust device 22 .
  • the upper body portion 7 is fixed on the intermediate plate 5 and the top plate 8 is fixed on the upper end portion of the upper body portion 7 .
  • a cup-shaped core member 15 is fixed on the central portion of the top plate 8 in such a manner that it hangs downward from the top plate 8 .
  • a doughnut-shaped plasma generating space 9 is formed by the upper body portion 7 , the top plate 8 and the core member 15 . It is noted that the inner diameter of the upper body portion 7 is larger than the outer diameter of the substrate K.
  • the intermediate plate 5 has an opening 5 a formed therein and a plasma density adjusting member 20 which is formed in a funnel shape having an opening at the top and an opening at the bottom is fixedly provided on the lower surface of the intermediate plate 5 .
  • the plasma generating space 9 and the processing space 6 communicate with each other via the opening 5 a and the plasma density adjusting member 20 .
  • the plasma density adjusting member 20 is positioned between the plasma generating space 9 and the substrate K, and is made of a conductive material (for example, aluminum) and is appropriately grounded. Further, the inner diameter of the lower end portion of the plasma density adjusting member is smaller than the inner diameter of the upper body portion 7 .
  • a coil 16 is disposed on the outside of the upper body portion 7 in such a manner that it winds around the upper body portion 7 , and is connected to an RF power supply unit 17 via a matching unit 18 .
  • the RF power supply unit 17 supplies RF power to the coil 16 .
  • a supply pipe 19 a connecting to an etching gas supply source 19 is connected to the top plate 5 , and an etching gas is supplied into the plasma generating space 9 from the etching gas supply source 19 .
  • a substrate K for example, a silicon substrate
  • the platen 10 is lifted up to a processing position and the processing space 6 and the plasma processing space 9 are brought to a negative pressure by the exhaust device 22 , and RF power is supplied to the platen 10 from the RF power supply unit 13 .
  • RF power is supplied to the coil 16 from the RF power supply unit 17 , and thereby an inductive electric field is generated in the plasma generating space 9 .
  • an etching gas for example, SF 6 gas
  • plasma is generated from the etching gas due to the inductive electric field.
  • the plasma generating space 9 is, as described above, formed in a doughnut shape by the cylindrical core member 15 , the volume thereof is small. Further, since only the region close to the coil 16 is defined as the plasma generating space 9 , high-density plasma can be generated even when the power applied to the coil 16 is relatively low.
  • the high-density plasma thus generated flows downward and flows through the plasma density adjusting member 20 , and reaches the substrate K positioned below the plasma density adjusting member 20 and etches the surface of the substrate K. It is noted that the in-plane density of the plasma flowing downward from the plasma generating space 9 has a concave density distribution in which the density is extremely high at the periphery portion and is low at the central portion.
  • the plasma density adjusting member 20 is formed in a funnel shape the lower opening of which has an inner diameter smaller than the inner diameter of the upper body portion 7 , the plasma is gradually concentrated and the in-plane density thereof is gradually equalized, and thereby the in-plane density of the plasma is adjusted to have a gradual concave density distribution or to have a flat uniform density distribution or to have a gradual convex density distribution, after which the plasma reaches the substrate.
  • the high-density plasma adjusted as described above acts on the surface of the substrate, and thereby the entire surface of the substrate is etched uniformly.
  • a bias potential is applied to the substrate K by applying RF power to the platen 10 . Therefore, ions in the plasma are irradiated toward the substrate K, and thereby so-called ion assisted etching is performed.
  • the plasma density adjusting member 20 is made of a conductive material grounded, while the plasma passes through the plasma density adjusting member 20 , a high density of ions existing at the periphery portion of the plasma is neutralized by contacting with the plasma density adjusting member 20 , and thereby disappears. Therefore, the problem that deterioration of etching shape is resulted from a high density of ions acting on the substrate is solved.
  • FIG. 2 shows the result of the formation of a deep hole in the substrate K using the plasma etching apparatus 1 of the embodiment.
  • the entrance of a hole 30 is not formed into a tapered shape and further the surface thereof is not rough.
  • FIG. 4 shows the result of the etching of a SiO 2 film on a silicon substrate of 6 inches, wherein the plasma etching apparatus 1 of the embodiment as shown in FIG. 1 was used, SF 6 gas was used as etching gas, the flow rate of the SF 6 gas supplied into the plasma generating space 9 was 500 ml/min, the RF power applied to the coil 16 was 2000 W, the RF power applied to the platen 10 was 70 W, and the dimensions of the plasma density adjusting member 20 as shown in FIG. 3 , that is, the lower-end inner diameter D 1 , upper-end inner diameter D 2 and length L thereof were 172 mm, 270 mm and 106 mm, respectively.
  • the entire surface of the substrate K could be etched with an extremely high etching-rate uniformity of 15.5 nm/min ⁇ 3.1%.
  • FIG. 5 shows the result of the etching when the D 1 and the length L of the plasma density adjusting member 20 were set to 165 mm and 86 mm, respectively and the result of the etching when the D 1 and the length L of the plasma density adjusting member 20 were set to 242 mm and 86 mm, respectively.
  • the etching rate throughout the entire surface of the substrate K was 17.8 nm/min ⁇ 10.1% when the D 1 was 165 mm, and the etching rate throughout the entire surface of the substrate K was 23.9 nm/min ⁇ 11.1% when the D 1 was 242 mm.
  • adjusting the dimensions of the plasma density adjusting member 20 appropriately enables the entire surface of the substrate K to be processed uniformly. Further, as seen from FIG. 4 , setting the dimensions of the plasma density adjusting member 20 to the optimum conditions enables the entire surface of the substrate K to be etched with an extremely high uniformity.
  • the core member 15 is preferably made of a non-conductive material.
  • the core member 15 is made of a conductive material and is provided, ions in the plasma generated in the plasma generating space 9 disappear, and, as a result thereof, the density of the plasma is reduced.
  • the core member 15 is made of a non-conductive material, it is possible to prevent the reduction of the density of the plasma.
  • the plasma etching apparatus of the present invention can be suitably used as a plasma etching apparatus capable of etching the entire surface of a substrate with an extremely high uniformity.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Paper (AREA)
US13/145,228 2009-03-31 2009-12-10 Plasma Etching Apparatus Abandoned US20120006490A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009-084137 2009-03-31
JP2009084137A JP4977730B2 (ja) 2009-03-31 2009-03-31 プラズマエッチング装置
PCT/JP2009/070643 WO2010113358A1 (fr) 2009-03-31 2009-12-10 Appareil de gravure au plasma

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US20120006490A1 true US20120006490A1 (en) 2012-01-12

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US13/145,228 Abandoned US20120006490A1 (en) 2009-03-31 2009-12-10 Plasma Etching Apparatus

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US (1) US20120006490A1 (fr)
EP (1) EP2416351B1 (fr)
JP (1) JP4977730B2 (fr)
KR (1) KR20120009419A (fr)
CN (1) CN102301457B (fr)
TW (1) TWI476829B (fr)
WO (1) WO2010113358A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140197136A1 (en) * 2011-08-19 2014-07-17 Vladimir Nagorny High Efficiency Plasma Source
KR20150058150A (ko) * 2012-09-27 2015-05-28 에스피피 테크놀로지스 컴퍼니 리미티드 플라즈마 식각 장치
US20170221732A1 (en) * 2014-08-14 2017-08-03 Robert Bosch Gmbh Device for Anisotropically Etching a Substrate, and Method for Operating a Device for Anisotropically Etching a Substrate
TWI692795B (zh) * 2013-10-15 2020-05-01 英商Ｓｐｔｓ科技公司 電漿蝕刻裝置、用以改裝現有電漿蝕刻裝置之套件，以及對基體進行電漿蝕刻之方法
US11201036B2 (en) 2017-06-09 2021-12-14 Beijing E-Town Semiconductor Technology Co., Ltd Plasma strip tool with uniformity control

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5821039B2 (ja) * 2011-11-07 2015-11-24 パナソニックＩｐマネジメント株式会社 プラズマ処理装置
JP5485327B2 (ja) * 2012-04-16 2014-05-07 Ｓｐｐテクノロジーズ株式会社 プラズマ密度調整部材
JP6444794B2 (ja) * 2015-03-30 2018-12-26 Ｓｐｐテクノロジーズ株式会社 半導体素子の製造方法及びその製造に用いられるプラズマエッチング装置

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US20070158305A1 (en) * 2003-10-01 2007-07-12 Oxford Instruments Plasma Technology Limited Apparatus and method for plasma treating a substrate

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JP2004079465A (ja) * 2002-08-22 2004-03-11 Shimadzu Corp プラズマ生成装置およびプラズマ処理装置
JP3712125B2 (ja) * 2003-02-03 2005-11-02 東京応化工業株式会社 プラズマ処理装置
JP4459877B2 (ja) 2004-08-12 2010-04-28 住友精密工業株式会社 エッチング方法及びエッチング装置
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US20020008480A1 (en) * 2000-06-06 2002-01-24 Matsushita Electric Works, Ltd. Plasma treatment apparatus and plasma treatment method
US20030092278A1 (en) * 2001-11-13 2003-05-15 Fink Steven T. Plasma baffle assembly
US20070158305A1 (en) * 2003-10-01 2007-07-12 Oxford Instruments Plasma Technology Limited Apparatus and method for plasma treating a substrate
US20060284563A1 (en) * 2005-06-17 2006-12-21 Samsung Electronics Co., Ltd. Plasma accelerating apparatus and plasma processing system having the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140197136A1 (en) * 2011-08-19 2014-07-17 Vladimir Nagorny High Efficiency Plasma Source
US9214319B2 (en) * 2011-08-19 2015-12-15 Mattson Technology, Inc. High efficiency plasma source
KR20150058150A (ko) * 2012-09-27 2015-05-28 에스피피 테크놀로지스 컴퍼니 리미티드 플라즈마 식각 장치
US20150170883A1 (en) * 2012-09-27 2015-06-18 Spp Technologies Co., Ltd. Plasma Etching Device
EP2903019A4 (fr) * 2012-09-27 2016-06-08 Spp Technologies Co Ltd Dispositif de gravure par plasma
KR102107496B1 (ko) 2012-09-27 2020-05-07 에스피피 테크놀로지스 컴퍼니 리미티드 플라즈마 식각 장치
TWI692795B (zh) * 2013-10-15 2020-05-01 英商Ｓｐｔｓ科技公司 電漿蝕刻裝置、用以改裝現有電漿蝕刻裝置之套件，以及對基體進行電漿蝕刻之方法
US20170221732A1 (en) * 2014-08-14 2017-08-03 Robert Bosch Gmbh Device for Anisotropically Etching a Substrate, and Method for Operating a Device for Anisotropically Etching a Substrate
US10497543B2 (en) * 2014-08-14 2019-12-03 Robert Bosch Gmbh Device for anisotropically etching a substrate, and method for operating a device for anisotropically etching a substrate
US11201036B2 (en) 2017-06-09 2021-12-14 Beijing E-Town Semiconductor Technology Co., Ltd Plasma strip tool with uniformity control

Also Published As

Publication number Publication date
KR20120009419A (ko) 2012-01-31
CN102301457B (zh) 2013-09-25
JP2010238847A (ja) 2010-10-21
CN102301457A (zh) 2011-12-28
WO2010113358A1 (fr) 2010-10-07
EP2416351A4 (fr) 2015-08-12
TWI476829B (zh) 2015-03-11
TW201036061A (en) 2010-10-01
EP2416351A1 (fr) 2012-02-08
JP4977730B2 (ja) 2012-07-18
EP2416351B1 (fr) 2019-08-07

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