US20110308604A1 - Photovoltaic cell with mesh electrode - Google Patents
Photovoltaic cell with mesh electrode Download PDFInfo
- Publication number
- US20110308604A1 US20110308604A1 US13/214,585 US201113214585A US2011308604A1 US 20110308604 A1 US20110308604 A1 US 20110308604A1 US 201113214585 A US201113214585 A US 201113214585A US 2011308604 A1 US2011308604 A1 US 2011308604A1
- Authority
- US
- United States
- Prior art keywords
- photovoltaic cell
- mesh
- electrically conductive
- electrode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000463 material Substances 0.000 claims description 102
- -1 polyphenylenes Polymers 0.000 claims description 31
- 239000004020 conductor Substances 0.000 claims description 30
- 229920000642 polymer Polymers 0.000 claims description 20
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 13
- 230000000903 blocking effect Effects 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 7
- 229920000123 polythiophene Polymers 0.000 claims description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 7
- 229910001887 tin oxide Inorganic materials 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 6
- 229910003472 fullerene Inorganic materials 0.000 claims description 6
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- 229920000548 poly(silane) polymer Polymers 0.000 claims description 5
- 229920000767 polyaniline Polymers 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 claims description 4
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 3
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 79
- 239000000758 substrate Substances 0.000 description 48
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 239000012790 adhesive layer Substances 0.000 description 9
- 229920001940 conductive polymer Polymers 0.000 description 9
- 239000007787 solid Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000012780 transparent material Substances 0.000 description 5
- 239000004985 Discotic Liquid Crystal Substance Substances 0.000 description 4
- 238000007756 gravure coating Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 3
- 239000010406 cathode material Substances 0.000 description 3
- 229920002313 fluoropolymer Polymers 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 239000002073 nanorod Substances 0.000 description 3
- 238000013082 photovoltaic technology Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 150000004866 oxadiazoles Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001643 poly(ether ketone) Polymers 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000128 polypyrrole Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910000619 316 stainless steel Inorganic materials 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 241000208202 Linaceae Species 0.000 description 1
- 235000004431 Linum usitatissimum Nutrition 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229920000831 ionic polymer Polymers 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 150000003673 urethanes Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
- H01G9/2081—Serial interconnection of cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2013—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte the electrolyte comprising ionic liquids, e.g. alkyl imidazolium iodide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to photovoltaic cells that have a mesh electrode, as well as related systems, methods and components.
- Photovoltaic cells are commonly used to transfer energy in the form of light into energy in the form of electricity.
- a typical photovoltaic cell includes a photoactive material disposed between two electrodes. Generally, light passes through one or both of the electrodes to interact with the photoactive material. As a result, the ability of one or both of the electrodes to transmit light (e.g., light at one or more wavelengths absorbed by a photoactive material) can limit the overall efficiency of a photovoltaic cell.
- a film of semiconductive material e.g., indium tin oxide
- the semiconductive material can transmit more light than many electrically conductive materials.
- Photovoltaic technology is also viewed by many as being an environmentally friendly energy technology.
- the material and manufacturing costs of a photovoltaic system should be recoverable over some reasonable time frame. But, in some instances the costs (e.g., due to materials and/or manufacture) associated with practically designed photovoltaic systems have restricted their availability and use.
- the invention relates to photovoltaic cells that have a mesh electrode, as well as related systems, methods and components.
- the mesh electrode is formed of a material that provides good electrical conductivity (typically an electrically conductive material, but semiconductive materials may also be used), and the mesh electrode has an open area that is large enough to transmit enough light so that the photovoltaic cell is relatively efficient at transferring the light to electrical energy.
- the invention features a photovoltaic cell that includes two electrodes and an active layer between the electrodes. At least one of the electrodes is in the form of a mesh.
- the active layer includes an electron acceptor material and an electron donor material.
- the invention features a system that includes a plurality of photovoltaic cells, with each of the photovoltaic cells including two electrodes and an active layer between the electrodes. At least one of the electrodes is in the form of a mesh.
- the active layer includes an electron acceptor material and an electron donor material.
- two or more of the photovoltaic cells are electrically connected in parallel. In certain embodiments, two or more of the photovoltaic cells are electrically connected in series. In certain embodiments, two or more of the photovoltaic cells are electrically connected in parallel, and two or more different photovoltaic cells are electrically connected in series.
- the invention features a photovoltaic cell that includes first and second electrodes, an active layer between the first and second electrodes, a hole blocking layer between the first electrode and the active layer, and a hole carrier layer between the mesh electrode and the active layer. At least one of the electrodes is in the form of a mesh.
- the active layer includes an electron acceptor material and an electron donor material.
- the invention features a system that includes a plurality of photovoltaic cells, with each of the photovoltaic cells including first and second electrodes, an active layer between the first and second electrodes, a hole blocking layer between the first electrode and the active layer, and a hole carrier layer between the second electrode and the active layer. At least one of the electrodes is in the form of a mesh.
- the active layer includes an electron acceptor material and an electron donor material.
- two or more of the photovoltaic cells are electrically connected in parallel.
- two or more of the photovoltaic cells are electrically connected in series.
- two or more of the photovoltaic cells are electrically connected in parallel, and two or more different photovoltaic cells are electrically connected in series.
- Embodiments can include one or more of the following aspects.
- the mesh electrode can be a cathode or an anode.
- a photovoltaic cell has a mesh cathode and a mesh anode.
- the mesh electrode can be formed of wires.
- the wires can be formed of an electrically conductive material, such as an electrically conductive metal, an electrically conductive alloy, or an electrically conductive polymer.
- the wires can include a coating of an electrically conductive material (an electrically conductive metal, an electrically conductive alloy, or an electrically conductive polymer).
- the mesh electrode can be, for example, an expanded mesh or a woven mesh.
- the mesh can be formed of an electrically conductive material (an electrically conductive metal, an electrically conductive alloy, or an electrically conductive polymer).
- the mesh can include a coating of an electrically conductive material (an electrically conductive metal, an electrically conductive alloy, or an electrically conductive polymer).
- the electron acceptor material can be, for example, formed of fullerenes, inorganic nanoparticles, discotic liquid crystals, carbon nanorods, inorganic nanorods, oxadiazoles, or polymers containing moieties capable of accepting electrons or forming stable anions (e.g., polymers containing CN groups, polymers containing CF 3 groups).
- the electron acceptor material is a substituted fullerene.
- the electron donor material can be formed of discotic liquid crystals, polythiophenes, polyphenylenes, polyphenylvinylenes, polysilanes, polythienylvinylenes and/or polyisothianaphthalenes. In some embodiments, the electron donor material is poly(3-hexylthiophene).
- a photovoltaic cell can further include a hole blocking layer between the active layer and an anode (e.g., a mesh anode or a non-mesh anode).
- the hole blocking layer can be formed of, for example, LiF or metal oxides.
- a photovoltaic cell can also include a hole carrier layer between the active layer and the cathode (e.g., a mesh cathode or non-mesh cathode).
- the hole carrier layer can be formed of, for example, polythiophenes, polyanilines, and/or polyvinylcarbazoles, or polyions of one or more of these polymers.
- the hole carrier layer is in contact with a substrate that supports that cathode.
- the photovoltaic cell further includes an adhesive material between the substrate that supports the cathode and the hole carrier layer.
- an adhesive material can adhere material layers in contact with the adhesive during standard operating conditions of a photovoltaic cell.
- an adhesive includes one or more thermoplastics, thermosets, or pressure sensitive adhesives.
- the photovoltaic cell or photovoltaic system is electrically connected to an external load.
- Embodiments can provide one or more of the following advantages.
- a mesh electrode can provide good electrical conductivity because it is formed of an electrically conductive material (as opposed to a semiconductor material), while at the same time having a structure (e.g., a mesh structure) that allows a sufficient amount of light therethrough so that the photovoltaic cell is more efficient at converting light into electrical energy.
- a structure e.g., a mesh structure
- a mesh electrode can be sufficiently flexible to allow the mesh electrode to be incorporated in the photovoltaic cell using a continuous, roll-to-roll manufacturing process, thereby allowing manufacture of the photovoltaic cell at relatively high throughput.
- Using one or more mesh electrodes can reduce the cost and/or complexity associated with manufacturing a photovoltaic cell.
- a photovoltaic cell having one or more mesh electrodes can transfer energy in the form of light to energy in the form of electricity in a more efficient manner compared to certain semiconductive electrodes.
- FIG. 1 is a cross-sectional view of an embodiment of a photovoltaic cell
- FIG. 2 is an elevational view of an embodiment of a mesh electrode
- FIG. 3 is a cross-sectional view of the mesh electrode of 2;
- FIG. 4 is a cross-sectional view of a portion of a mesh electrode
- FIG. 5 is a cross-sectional view of another embodiment of a photovoltaic cell
- FIG. 6 is a schematic of a system containing multiple photovoltaic cells electrically connected in series.
- FIG. 7 is a schematic of a system containing multiple photovoltaic cells electrically connected in parallel.
- FIG. 1 shows a cross-sectional view of a photovoltaic cell 100 that includes a transparent substrate 110 , a mesh cathode 120 , a hole carrier layer 130 , a photoactive layer (containing an electron acceptor material and an electron donor material) 140 , a hole blocking layer 150 , an anode 160 , and a substrate 170 .
- light impinges on the surface of substrate 110 , and passes through substrate 110 , the openings in cathode 120 and hole carrier layer 130 .
- the light then interacts with photoactive layer 140 , causing electrons to be transferred from the electron donor material in layer 140 to the electron acceptor material in layer 140 .
- the electron acceptor material then transmits the electrons through hole blocking layer 150 to anode 160 , and the electron donor material transfers holes through hole carrier layer 130 to mesh cathode 120 .
- Anode 160 and mesh cathode 120 are in electrical connection via an external load so that electrons pass from anode 160 , through the load, and to cathode 120 .
- mesh cathode 120 includes solid regions 122 and open regions 124 .
- regions 122 are formed of electrically conducting material so that mesh cathode 120 can allow light to pass therethrough via regions 124 and conduct electrons via regions 122 .
- the area of mesh cathode 120 occupied by open regions 124 can be selected as desired.
- the open area of mesh cathode 120 is at least about 10% (e.g., at least about 20%, at least about 30%, at least about 40%, at least about 50%, at least about 60%, at least about 70%, at least about 80%) and/or at most about 99% (e.g., at most about 95%, at most about 90%, at most about 85%) of the total area of mesh cathode 120 .
- Mesh cathode 120 can be prepared in various ways.
- mesh cathode 120 is a woven mesh formed by weaving wires of material that form solid regions 122 .
- the wires can be woven using, for example, a plain weave, a Dutch, weave, a twill weave, a Dutch twill weave, or combinations thereof.
- mesh cathode 120 is formed of a welded wire mesh.
- mesh cathode 120 is an expanded mesh formed.
- An expanded metal mesh can be prepared, for example, by removing regions 124 (e.g., via laser removal, via chemical etching, via puncturing) from a sheet of material (e.g., an electrically conductive material, such as a metal), followed by stretching the sheet (e.g., stretching the sheet in two dimensions).
- mesh cathode 120 is a metal sheet formed by removing regions 124 (e.g., via laser removal, via chemical etching, via puncturing) without subsequently stretching the sheet.
- solid regions 122 are formed entirely of an electrically conductive material (e.g., regions 122 are formed of a substantially homogeneous material that is electrically conductive).
- electrically conductive materials that can be used in regions 122 include electrically conductive metals, electrically conductive alloys and electrically conductive polymers.
- Exemplary electrically conductive metals include gold, silver, copper, nickel, palladium, platinum and titanium.
- Exemplary electrically conductive alloys include stainless steel (e.g., 332 stainless steel, 316 stainless steel), alloys of gold, alloys of silver, alloys of copper, alloys of nickel, alloys of palladium, alloys of platinum and alloys of titanium.
- Exemplary electrically conducting polymers include polythiophenes (e.g., poly(3,4-ethelynedioxythiophene) (PEDOT)), polyanilines (e.g., doped polyanilines), polypyrroles (e.g., doped polypyrroles). In some embodiments, combinations of electrically conductive materials are used.
- PEDOT poly(3,4-ethelynedioxythiophene)
- PEDOT poly(3,4-ethelynedioxythiophene)
- polyanilines e.g., doped polyanilines
- polypyrroles e.g., doped polypyrroles.
- combinations of electrically conductive materials are used.
- solid regions 122 are formed of a material 302 that is coated with a different material 304 (e.g., using metallization, using vapor deposition).
- material 302 can be formed of any desired material (e.g., an electrically insulative material, an electrically conductive material, or a semiconductive material), and material 304 is an electrically conductive material.
- electrically insulative material from which material 302 can be formed include textiles, optical fiber materials, polymeric materials (e.g., a nylon) and natural materials (e.g., flax, cotton, wool, silk).
- electrically conductive materials from which material 302 can be formed include the electrically conductive materials disclosed above.
- semiconductive materials from which material 302 can be formed include indium tin oxide, fluorinated tin oxide, tin oxide and zinc oxide.
- material 302 is in the form of a fiber
- material 304 is an electrically conductive material that is coated on material 302 .
- material 302 is in the form of a mesh (see discussion above) that, after being formed into a mesh, is coated with material 304 .
- material 302 can be an expanded metal mesh
- material 304 can be PEDOT that is coated on the expanded metal mesh.
- the maximum thickness of mesh cathode 120 (i.e., the maximum thickness of mesh cathode 120 in a direction substantially perpendicular to the surface of substrate 110 in contact with mesh cathode 120 ) should be less than the total thickness of hole carrier layer 130 .
- the maximum thickness of mesh cathode 120 is at least 0.1 micron (e.g., at least about 0.2 micron, at least about 0.3 micron, at least about 0.4 micron, at least about 0.5 micron, at least about 0.6 micron, at least about 0.7 micron, at least about 0.8 micron, at least about 0.9 micron, at least about one micron) and/or at most about 10 microns (e.g., at most about nine microns, at most about eight microns, at most about seven microns, at most about six microns, at most about five microns, at most about four microns, at most about three microns, at most about two microns).
- microns e.g., at least about 0.2 micron, at least about 0.3 micron, at least about 0.4 micron, at least about 0.5 micron, at least about 0.6 micron, at least about 0.7 micron, at least about 0.8 micron, at least about 0.9 micron, at least about one micro
- open regions 124 can generally have any desired shape (e.g., square, circle, semicircle, triangle, diamond, ellipse, trapezoid, irregular shape). In some embodiments, different open regions 124 in mesh cathode 120 can have different shapes.
- solid regions 122 can generally have any desired shape (e.g., rectangle, circle, semicircle, triangle, diamond, ellipse, trapezoid, irregular shape). In some embodiments, different solid regions 122 in mesh cathode 120 can have different shapes.
- mesh cathode 120 is flexible (e.g., sufficiently flexible to be incorporated in photovoltaic cell 100 using a continuous, roll-to-roll manufacturing process). In certain embodiments, mesh cathode 120 is semi-rigid or inflexible. In some embodiments, different regions of mesh cathode 120 can be flexible, semi-rigid or inflexible (e.g., one or more regions flexible and one or more different regions semi-rigid, one or more regions flexible and one or more different regions inflexible).
- Substrate 110 is generally formed of a transparent material.
- a transparent material is a material which, at the thickness used in a photovoltaic cell 100 , transmits at least about 60% (e.g., at least about 70%, at least about 75%, at least about 80%, at least about 85%) of incident light at a wavelength or a range of wavelengths used during operation of the photovoltaic cell.
- Exemplary materials from which substrate 110 can be formed include polyethylene terephthalates, polyimides, polyethylene naphthalates, polymeric hydrocarbons, cellulosic polymers, polycarbonates, polyamides, polyethers and polyether ketones.
- the polymer can be a fluorinated polymer.
- combinations of polymeric materials are used.
- different regions of substrate 110 can be formed of different materials.
- substrate 110 can be flexible, semi-rigid or rigid (e.g., glass). In some embodiments, substrate 110 has a flexural modulus of less than about 5,000 megaPascals. In certain embodiments, different regions of substrate 110 can be flexible, semi-rigid or inflexible (e.g., one or more regions flexible and one or more different regions semi-rigid, one or more regions flexible and one or more different regions inflexible).
- substrate 110 is at least about one micron (e.g., at least about five microns, at least about 10 microns) thick and/or at most about 1,000 microns (e.g., at most about 500 microns thick, at most about 300 microns thick, at most about 200 microns thick, at most about 100 microns, at most about 50 microns) thick.
- microns e.g., at least about five microns, at least about 10 microns
- 1,000 microns e.g., at most about 500 microns thick, at most about 300 microns thick, at most about 200 microns thick, at most about 100 microns, at most about 50 microns
- substrate 110 can be colored or non-colored. In some embodiments, one or more portions of substrate 110 is/are colored while one or more different portions of substrate 110 is/are non-colored.
- Substrate 110 can have one planar surface (e.g., the surface on which light impinges), two planar surfaces (e.g., the surface on which light impinges and the opposite surface), or no planar surfaces.
- a non-planar surface of substrate 110 can, for example, be curved or stepped.
- a non-planar surface of substrate 110 is patterned (e.g., having patterned steps to form a Fresnel lens, a lenticular lens or a lenticular prism).
- Hole carrier layer 130 is generally formed of a material that, at the thickness used in photovoltaic cell 100 , transports holes to mesh cathode 120 and substantially blocks the transport of electrons to mesh cathode 120 .
- materials from which layer 130 can be formed include polythiophenes (e.g., PEDOT), polyanilines, polyvinylcarbazoles, polyphenylenes, polyphenylvinylenes, polysilanes, polythienylenevinylenes and/or polyisothianaphthanenes.
- hole carrier layer 130 can include combinations of hole carrier materials.
- the distance between the upper surface of hole carrier layer 130 (i.e., the surface of hole carrier layer 130 in contact with active layer 140 ) and the upper surface of substrate 110 (i.e., the surface of substrate 110 in contact with mesh electrode 120 ) can be varied as desired.
- the distance between the upper surface of hole carrier layer 130 and the upper surface of mesh cathode 120 is at least 0.01 micron (e.g., at least about 0.05 micron, at least about 0.1 micron, at least about 0.2 micron, at least about 0.3 micron, at least about 0.5 micron) and/or at most about five microns (e.g., at most about three microns, at most about two microns, at most about one micron).
- the distance between the upper surface of hole carrier layer 130 and the upper surface of mesh cathode 120 is from about 0.01 micron to about 0.5 micron.
- Active layer 140 generally contains an electron acceptor material and an electron donor material.
- electron acceptor materials include formed of fullerenes, oxadiazoles, carbon nanorods, discotic liquid crystals, inorganic nanoparticles (e.g., nanoparticles formed of zinc oxide, tungsten oxide, indium phosphide, cadmium selenide and/or lead sulphide), inorganic nanorods (e.g., nanorods formed of zinc oxide, tungsten oxide, indium phosphide, cadmium selenide and/or lead sulphide), or polymers containing moieties capable of accepting electrons or forming stable anions (e.g., polymers containing CN groups, polymers containing CF 3 groups).
- the electron acceptor material is a substituted fullerene (e.g., PCBM).
- active layer 140 can include a combination of electron acceptor materials.
- electron donor materials include discotic liquid crystals, polythiophenes, polyphenylenes, polyphenylvinylenes, polysilanes, polythienylvinylenes, and polyisothianaphthalenes.
- the electron donor material is poly(3-hexylthiophene).
- active layer 140 can include a combination of electron donor materials.
- active layer 140 is sufficiently thick to be relatively efficient at absorbing photons impinging thereon to form corresponding electrons and holes, and sufficiently thin to be relatively efficient at transporting the holes and electrons to layers 130 and 150 , respectively.
- layer 140 is at least 0.05 micron (e.g., at least about 0.1 micron, at least about 0.2 micron, at least about 0.3 micron) thick and/or at most about one micron (e.g., at most about 0.5 micron, at most about 0.4 micron) thick. In some embodiments, layer 140 is from about 0.1 micron to about 0.2 micron thick.
- Hole blocking layer 150 is general formed of a material that, at the thickness used in photovoltaic cell 100 , transports electrons to anode 160 and substantially blocks the transport of holes to anode 160 .
- materials from which layer 150 can be formed include LiF and metal oxides (e.g., zinc oxide, titanium oxide).
- hole blocking layer 150 is at least 0.02 micron (e.g., at least about 0.03 micron, at least about 0.04 micron, at least about 0.05 micron) thick and/or at most about 0.5 micron (e.g., at most about 0.4 micron, at most about 0.3 micron, at most about 0.2 micron, at most about 0.1 micron) thick.
- Anode 160 is generally formed of an electrically conductive material, such as one or more of the electrically conductive materials noted above. In some embodiments, anode 160 is formed of a combination of electrically conductive materials.
- Substrate 170 can be formed of a transparent material or a non-transparent material.
- substrate 170 is desirably formed of a transparent material.
- Exemplary materials from which substrate 170 can be formed include polyethylene terephthalates, polyimides, polyethylene naphthalates, polymeric hydrocarbons, cellulosic polymers, polycarbonates, polyamides, polyethers and polyether ketones.
- the polymer can be a fluorinated polymer.
- combinations of polymeric materials are used.
- different regions of substrate 110 can be formed of different materials.
- substrate 170 can be flexible, semi-rigid or rigid. In some embodiments, substrate 170 has a flexural modulus of less than about 5,000 megaPascals. In certain embodiments, different regions of substrate 170 can be flexible, semi-rigid or inflexible (e.g., one or more regions flexible and one or more different regions semi-rigid, one or more regions flexible and one or more different regions inflexible). Generally, substrate 170 is substantially non-scattering.
- substrate 170 is at least about one micron (e.g., at least about five microns, at least about 10 microns) thick and/or at most about 200 microns (e.g., at most about 100 microns, at most about 50 microns) thick.
- substrate 170 can be colored or non-colored. In some embodiments, one or more portions of substrate 170 is/are colored while one or more different portions of substrate 170 is/are non-colored.
- Substrate 170 can have one planar surface (e.g., the surface of substrate 170 on which light impinges in embodiments in which during use photovoltaic cell 100 uses light that passes through anode 160 ), two planar surfaces (e.g., the surface of substrate 170 on which light impinges in embodiments in which during use photovoltaic cell 100 uses light that passes through anode 160 and the opposite surface of substrate 170 ), or no planar surfaces.
- a non-planar surface of substrate 170 can, for example, be curved or stepped.
- a non-planar surface of substrate 170 is patterned (e.g., having patterned steps to form a Fresnel lens, a lenticular lens or a lenticular prism).
- FIG. 5 shows a cross-sectional view of a photovoltaic cell 400 that includes an adhesive layer 410 between substrate 110 and hole carrier layer 130 .
- adhesive layer 410 is formed of a material that is transparent at the thickness used in photovoltaic cell 400 .
- adhesives include epoxies and urethanes.
- commercially available materials that can be used in adhesive layer 410 include BynelTM adhesive (DuPont) and 615 adhesive (3M).
- layer 410 can include a fluorinated adhesive.
- layer 410 contains an electrically conductive adhesive.
- An electrically conductive adhesive can be formed of, for example, an inherently electrically conductive polymer, such as the electrically conductive polymers disclosed above (e.g., PEDOT).
- An electrically conductive adhesive can be also formed of a polymer (e.g., a polymer that is not inherently electrically conductive) that contains one or more electrically conductive materials (e.g., electrically conductive particles).
- layer 410 contains an inherently electrically conductive polymer that contains one or more electrically conductive materials.
- the thickness of layer 410 (i.e., the thickness of layer 410 in a direction substantially perpendicular to the surface of substrate 110 in contact with layer 410 ) is less thick than the maximum thickness of mesh cathode 120 .
- the thickness of layer 410 is at most about 90% (e.g., at most about 80%, at most about 70%, at most about 60%, at most about 50%, at most about 40%, at most about 30%, at most about 20%) of the maximum thickness of mesh cathode 120 . In certain embodiments, however, the thickness of layer 410 is about the same as, or greater than, the maximum thickness of mesh cathode 130 .
- a photovoltaic cell having a mesh cathode can be manufactured as desired.
- a photovoltaic cell can be prepared as follows. Electrode 160 is formed on substrate 170 using conventional techniques, and hole-blocking layer 150 is formed on electrode 160 (e.g., using a vacuum deposition process or a solution coating process). Active layer 140 is formed on hole-blocking layer 150 (e.g., using a solution coating process, such as slot coating, spin coating or gravure coating). Hole carrier layer 130 is formed on active layer 140 (e.g., using a solution coating process, such as slot coating, spin coating or gravure coating). Mesh cathode 120 is partially disposed in hole carrier layer 130 (e.g., by disposing mesh cathode 120 on the surface of hole carrier layer 130 , and pressing mesh cathode 120 ). Substrate 110 is then formed on mesh cathode 120 and hole carrier layer 130 using conventional methods.
- a photovoltaic cell can be prepared as follows. Electrode 160 is formed on substrate 170 using conventional techniques, and hole-blocking layer 150 is formed on electrode 160 (e.g., using a vacuum deposition or a solution coating process). Active layer 140 is formed on hole-blocking layer 150 (e.g., using a solution coating process, such as slot coating, spin coating or gravure coating). Hole carrier layer 130 is formed on active layer 140 (e.g., using a solution coating process, such as slot coating, spin coating or gravure coating). Adhesive layer 410 is disposed on hole carrier layer 130 using conventional methods.
- Mesh cathode 120 is partially disposed in adhesive layer 410 and hole carrier layer 130 (e.g., by disposing mesh cathode 120 on the surface of adhesive layer 410 , and pressing mesh cathode 120 ). Substrate 110 is then formed on mesh cathode 120 and adhesive layer 410 using conventional methods.
- mesh cathode 120 is formed by printing the cathode material on the surface of carrier layer 130 or adhesive layer 410 to provide an electrode having the open structure shown in the figures.
- mesh cathode 120 can be printed using an inkjet printer, a screen printer, or gravure printer.
- the cathode material can be disposed in a paste which solidifies upon heating or radiation (e.g., UV radiation, visible radiation, IR radiation, electron beam radiation).
- the cathode material can be, for example, vacuum deposited in a mesh pattern through a screen or after deposition it may be patterned by photolithography.
- FIG. 6 is a schematic of a photovoltaic system 500 having a module 510 containing photovoltaic cells 520 . Cells 520 are electrically connected in series, and system 500 is electrically connected to a load.
- FIG. 7 is a schematic of a photovoltaic system 600 having a module 610 that contains photovoltaic cells 620 . Cells 620 are electrically connected in parallel, and system 600 is electrically connected to a load.
- some (e.g., all) of the photovoltaic cells in a photovoltaic system can have one or more common substrates.
- some photovoltaic cells in a photovoltaic system are electrically connected in series, and some of the photovoltaic cells in the photovoltaic system are electrically connected in parallel.
- a mesh anode can be used. This can be desirable, for example, when light transmitted by the anode is used. In certain embodiments, both a mesh cathode and a mesh anode are used. This can be desirable, for example, when light transmitted by both the cathode and the anode is used.
- light transmitted by the anode side of the cell is used (e.g., when a mesh anode is used).
- light transmitted by both the cathode and anode sides of the cell is used (when a mesh cathode and a mesh anode are used).
- a photovoltaic cell may include one or more electrodes (e.g., one or more mesh electrodes, one or more non-mesh electrodes) formed of a semiconductive material.
- semiconductive materials include indium tin oxide, fluorinated tin oxide, tin oxide and zinc oxide.
- one or more semiconductive materials can be disposed in the open regions of a mesh electrode (e.g., in the open regions of a mesh cathode, in the open regions of a mesh anode, in the open regions of a mesh cathode and the open regions of a mesh anode).
- semiconductive materials include tin oxide, fluorinated tin oxide, tin oxide and zinc oxide.
- the semiconductive material disposed in an open region of a mesh electrode is transparent at the thickness used in the photovoltaic cell.
- a protective layer can be applied to one or both of the substrates.
- a protective layer can be used to, for example, keep contaminants (e.g., dirt, water, oxygen, chemicals) out of a photovoltaic cell and/or to ruggedize the cell.
- a protective layer can be formed of a polymer (e.g., a fluorinated polymer).
- photovoltaic cells that have one or more mesh electrodes
- one or more mesh electrodes can be used in other types of photovoltaic cells as well.
- photovoltaic cells include photoactive cells with an active material formed of amorphous silicon, cadmium selenide, cadmium telluride, copper indium sulfide, and copper indium gallium arsenide.
- materials 302 and 304 are formed of the same material.
- solid regions 122 can be formed of more than two coated materials (e.g., three coated materials, four coated materials, five coated materials, six coated materials.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
- Cell Electrode Carriers And Collectors (AREA)
Abstract
Description
- This application is a continuation of and claims priority to U.S. patent application Ser. No. 10/723,554, filed Nov. 26, 2003, which in turn is a continuation-in-part of and claims priority to U.S. patent application Ser. No. 10/395,823, filed Mar. 24, 2003, now U.S. Pat. No. 7,022,910. The entire contents of the parent applications are hereby incorporated by reference.
- The invention relates to photovoltaic cells that have a mesh electrode, as well as related systems, methods and components.
- Photovoltaic cells are commonly used to transfer energy in the form of light into energy in the form of electricity. A typical photovoltaic cell includes a photoactive material disposed between two electrodes. Generally, light passes through one or both of the electrodes to interact with the photoactive material. As a result, the ability of one or both of the electrodes to transmit light (e.g., light at one or more wavelengths absorbed by a photoactive material) can limit the overall efficiency of a photovoltaic cell. In many photovoltaic cells, a film of semiconductive material (e.g., indium tin oxide) is used to form the electrode(s) through which light passes because, although the semiconductive material may have a lower electrical conductivity than electrically conductive materials, the semiconductive material can transmit more light than many electrically conductive materials.
- There is an increasing interest in the development of photovoltaic technology due primarily to a desire to reduce consumption of and dependency on fossil fuel-based energy sources. Photovoltaic technology is also viewed by many as being an environmentally friendly energy technology. However, for photovoltaic technology to be a commercially feasible energy technology, the material and manufacturing costs of a photovoltaic system (a system that uses one or more photovoltaic cells to convert light to electrical energy) should be recoverable over some reasonable time frame. But, in some instances the costs (e.g., due to materials and/or manufacture) associated with practically designed photovoltaic systems have restricted their availability and use.
- The invention relates to photovoltaic cells that have a mesh electrode, as well as related systems, methods and components. The mesh electrode is formed of a material that provides good electrical conductivity (typically an electrically conductive material, but semiconductive materials may also be used), and the mesh electrode has an open area that is large enough to transmit enough light so that the photovoltaic cell is relatively efficient at transferring the light to electrical energy.
- In one aspect, the invention features a photovoltaic cell that includes two electrodes and an active layer between the electrodes. At least one of the electrodes is in the form of a mesh. The active layer includes an electron acceptor material and an electron donor material.
- In another aspect, the invention features a system that includes a plurality of photovoltaic cells, with each of the photovoltaic cells including two electrodes and an active layer between the electrodes. At least one of the electrodes is in the form of a mesh. The active layer includes an electron acceptor material and an electron donor material. In some embodiments, two or more of the photovoltaic cells are electrically connected in parallel. In certain embodiments, two or more of the photovoltaic cells are electrically connected in series. In certain embodiments, two or more of the photovoltaic cells are electrically connected in parallel, and two or more different photovoltaic cells are electrically connected in series.
- In a further aspect, the invention features a photovoltaic cell that includes first and second electrodes, an active layer between the first and second electrodes, a hole blocking layer between the first electrode and the active layer, and a hole carrier layer between the mesh electrode and the active layer. At least one of the electrodes is in the form of a mesh. The active layer includes an electron acceptor material and an electron donor material.
- In another aspect, the invention features a system that includes a plurality of photovoltaic cells, with each of the photovoltaic cells including first and second electrodes, an active layer between the first and second electrodes, a hole blocking layer between the first electrode and the active layer, and a hole carrier layer between the second electrode and the active layer. At least one of the electrodes is in the form of a mesh. The active layer includes an electron acceptor material and an electron donor material. In some embodiments, two or more of the photovoltaic cells are electrically connected in parallel. In certain embodiments, two or more of the photovoltaic cells are electrically connected in series. In certain embodiments, two or more of the photovoltaic cells are electrically connected in parallel, and two or more different photovoltaic cells are electrically connected in series.
- Embodiments can include one or more of the following aspects.
- The mesh electrode can be a cathode or an anode. In some embodiments, a photovoltaic cell has a mesh cathode and a mesh anode.
- The mesh electrode can be formed of wires. The wires can be formed of an electrically conductive material, such as an electrically conductive metal, an electrically conductive alloy, or an electrically conductive polymer. The wires can include a coating of an electrically conductive material (an electrically conductive metal, an electrically conductive alloy, or an electrically conductive polymer).
- The mesh electrode can be, for example, an expanded mesh or a woven mesh. The mesh can be formed of an electrically conductive material (an electrically conductive metal, an electrically conductive alloy, or an electrically conductive polymer). The mesh can include a coating of an electrically conductive material (an electrically conductive metal, an electrically conductive alloy, or an electrically conductive polymer).
- The electron acceptor material can be, for example, formed of fullerenes, inorganic nanoparticles, discotic liquid crystals, carbon nanorods, inorganic nanorods, oxadiazoles, or polymers containing moieties capable of accepting electrons or forming stable anions (e.g., polymers containing CN groups, polymers containing CF3 groups). In some embodiments, the electron acceptor material is a substituted fullerene.
- The electron donor material can be formed of discotic liquid crystals, polythiophenes, polyphenylenes, polyphenylvinylenes, polysilanes, polythienylvinylenes and/or polyisothianaphthalenes. In some embodiments, the electron donor material is poly(3-hexylthiophene).
- A photovoltaic cell can further include a hole blocking layer between the active layer and an anode (e.g., a mesh anode or a non-mesh anode). The hole blocking layer can be formed of, for example, LiF or metal oxides.
- A photovoltaic cell can also include a hole carrier layer between the active layer and the cathode (e.g., a mesh cathode or non-mesh cathode). The hole carrier layer can be formed of, for example, polythiophenes, polyanilines, and/or polyvinylcarbazoles, or polyions of one or more of these polymers.
- In some embodiments, the hole carrier layer is in contact with a substrate that supports that cathode.
- In certain embodiments, the photovoltaic cell further includes an adhesive material between the substrate that supports the cathode and the hole carrier layer. In general, an adhesive material can adhere material layers in contact with the adhesive during standard operating conditions of a photovoltaic cell. In some embodiments, an adhesive includes one or more thermoplastics, thermosets, or pressure sensitive adhesives.
- In some embodiments, the photovoltaic cell or photovoltaic system is electrically connected to an external load.
- Embodiments can provide one or more of the following advantages.
- In some embodiments, a mesh electrode can provide good electrical conductivity because it is formed of an electrically conductive material (as opposed to a semiconductor material), while at the same time having a structure (e.g., a mesh structure) that allows a sufficient amount of light therethrough so that the photovoltaic cell is more efficient at converting light into electrical energy.
- In certain embodiments, a mesh electrode can be sufficiently flexible to allow the mesh electrode to be incorporated in the photovoltaic cell using a continuous, roll-to-roll manufacturing process, thereby allowing manufacture of the photovoltaic cell at relatively high throughput.
- Using one or more mesh electrodes can reduce the cost and/or complexity associated with manufacturing a photovoltaic cell.
- A photovoltaic cell having one or more mesh electrodes can transfer energy in the form of light to energy in the form of electricity in a more efficient manner compared to certain semiconductive electrodes.
- Other features and advantages will be apparent from the description, drawings and from the claims.
-
FIG. 1 is a cross-sectional view of an embodiment of a photovoltaic cell; -
FIG. 2 is an elevational view of an embodiment of a mesh electrode; -
FIG. 3 is a cross-sectional view of the mesh electrode of 2; -
FIG. 4 is a cross-sectional view of a portion of a mesh electrode; -
FIG. 5 is a cross-sectional view of another embodiment of a photovoltaic cell; -
FIG. 6 is a schematic of a system containing multiple photovoltaic cells electrically connected in series; and -
FIG. 7 is a schematic of a system containing multiple photovoltaic cells electrically connected in parallel. -
FIG. 1 shows a cross-sectional view of aphotovoltaic cell 100 that includes atransparent substrate 110, amesh cathode 120, ahole carrier layer 130, a photoactive layer (containing an electron acceptor material and an electron donor material) 140, ahole blocking layer 150, ananode 160, and asubstrate 170. - In general, during use, light impinges on the surface of
substrate 110, and passes throughsubstrate 110, the openings incathode 120 andhole carrier layer 130. The light then interacts withphotoactive layer 140, causing electrons to be transferred from the electron donor material inlayer 140 to the electron acceptor material inlayer 140. The electron acceptor material then transmits the electrons throughhole blocking layer 150 toanode 160, and the electron donor material transfers holes throughhole carrier layer 130 to meshcathode 120.Anode 160 andmesh cathode 120 are in electrical connection via an external load so that electrons pass fromanode 160, through the load, and tocathode 120. - As shown in
FIGS. 2 and 3 ,mesh cathode 120 includes solid regions 122 and open regions 124. In general, regions 122 are formed of electrically conducting material so thatmesh cathode 120 can allow light to pass therethrough via regions 124 and conduct electrons via regions 122. - The area of
mesh cathode 120 occupied by open regions 124 (the open area of mesh cathode 120) can be selected as desired. Generally, the open area ofmesh cathode 120 is at least about 10% (e.g., at least about 20%, at least about 30%, at least about 40%, at least about 50%, at least about 60%, at least about 70%, at least about 80%) and/or at most about 99% (e.g., at most about 95%, at most about 90%, at most about 85%) of the total area ofmesh cathode 120. -
Mesh cathode 120 can be prepared in various ways. In some embodiments,mesh cathode 120 is a woven mesh formed by weaving wires of material that form solid regions 122. The wires can be woven using, for example, a plain weave, a Dutch, weave, a twill weave, a Dutch twill weave, or combinations thereof. In certain embodiments,mesh cathode 120 is formed of a welded wire mesh. In some embodiments,mesh cathode 120 is an expanded mesh formed. An expanded metal mesh can be prepared, for example, by removing regions 124 (e.g., via laser removal, via chemical etching, via puncturing) from a sheet of material (e.g., an electrically conductive material, such as a metal), followed by stretching the sheet (e.g., stretching the sheet in two dimensions). In certain embodiments,mesh cathode 120 is a metal sheet formed by removing regions 124 (e.g., via laser removal, via chemical etching, via puncturing) without subsequently stretching the sheet. - In certain embodiments, solid regions 122 are formed entirely of an electrically conductive material (e.g., regions 122 are formed of a substantially homogeneous material that is electrically conductive). Examples of electrically conductive materials that can be used in regions 122 include electrically conductive metals, electrically conductive alloys and electrically conductive polymers. Exemplary electrically conductive metals include gold, silver, copper, nickel, palladium, platinum and titanium. Exemplary electrically conductive alloys include stainless steel (e.g., 332 stainless steel, 316 stainless steel), alloys of gold, alloys of silver, alloys of copper, alloys of nickel, alloys of palladium, alloys of platinum and alloys of titanium. Exemplary electrically conducting polymers include polythiophenes (e.g., poly(3,4-ethelynedioxythiophene) (PEDOT)), polyanilines (e.g., doped polyanilines), polypyrroles (e.g., doped polypyrroles). In some embodiments, combinations of electrically conductive materials are used.
- As shown in
FIG. 4 , in some embodiments, solid regions 122 are formed of a material 302 that is coated with a different material 304 (e.g., using metallization, using vapor deposition). In general,material 302 can be formed of any desired material (e.g., an electrically insulative material, an electrically conductive material, or a semiconductive material), andmaterial 304 is an electrically conductive material. Examples of electrically insulative material from whichmaterial 302 can be formed include textiles, optical fiber materials, polymeric materials (e.g., a nylon) and natural materials (e.g., flax, cotton, wool, silk). Examples of electrically conductive materials from whichmaterial 302 can be formed include the electrically conductive materials disclosed above. Examples of semiconductive materials from whichmaterial 302 can be formed include indium tin oxide, fluorinated tin oxide, tin oxide and zinc oxide. In some embodiments,material 302 is in the form of a fiber, andmaterial 304 is an electrically conductive material that is coated onmaterial 302. In certain embodiments,material 302 is in the form of a mesh (see discussion above) that, after being formed into a mesh, is coated withmaterial 304. As an example,material 302 can be an expanded metal mesh, andmaterial 304 can be PEDOT that is coated on the expanded metal mesh. - Generally, the maximum thickness of mesh cathode 120 (i.e., the maximum thickness of
mesh cathode 120 in a direction substantially perpendicular to the surface ofsubstrate 110 in contact with mesh cathode 120) should be less than the total thickness ofhole carrier layer 130. Typically, the maximum thickness ofmesh cathode 120 is at least 0.1 micron (e.g., at least about 0.2 micron, at least about 0.3 micron, at least about 0.4 micron, at least about 0.5 micron, at least about 0.6 micron, at least about 0.7 micron, at least about 0.8 micron, at least about 0.9 micron, at least about one micron) and/or at most about 10 microns (e.g., at most about nine microns, at most about eight microns, at most about seven microns, at most about six microns, at most about five microns, at most about four microns, at most about three microns, at most about two microns). - While shown in
FIG. 2 as having a rectangular shape, open regions 124 can generally have any desired shape (e.g., square, circle, semicircle, triangle, diamond, ellipse, trapezoid, irregular shape). In some embodiments, different open regions 124 inmesh cathode 120 can have different shapes. - Although shown in
FIG. 3 as having square cross-sectional shape, solid regions 122 can generally have any desired shape (e.g., rectangle, circle, semicircle, triangle, diamond, ellipse, trapezoid, irregular shape). In some embodiments, different solid regions 122 inmesh cathode 120 can have different shapes. - In some embodiments,
mesh cathode 120 is flexible (e.g., sufficiently flexible to be incorporated inphotovoltaic cell 100 using a continuous, roll-to-roll manufacturing process). In certain embodiments,mesh cathode 120 is semi-rigid or inflexible. In some embodiments, different regions ofmesh cathode 120 can be flexible, semi-rigid or inflexible (e.g., one or more regions flexible and one or more different regions semi-rigid, one or more regions flexible and one or more different regions inflexible). -
Substrate 110 is generally formed of a transparent material. As referred to herein, a transparent material is a material which, at the thickness used in aphotovoltaic cell 100, transmits at least about 60% (e.g., at least about 70%, at least about 75%, at least about 80%, at least about 85%) of incident light at a wavelength or a range of wavelengths used during operation of the photovoltaic cell. Exemplary materials from whichsubstrate 110 can be formed include polyethylene terephthalates, polyimides, polyethylene naphthalates, polymeric hydrocarbons, cellulosic polymers, polycarbonates, polyamides, polyethers and polyether ketones. In certain embodiments, the polymer can be a fluorinated polymer. In some embodiments, combinations of polymeric materials are used. In certain embodiments, different regions ofsubstrate 110 can be formed of different materials. - In general,
substrate 110 can be flexible, semi-rigid or rigid (e.g., glass). In some embodiments,substrate 110 has a flexural modulus of less than about 5,000 megaPascals. In certain embodiments, different regions ofsubstrate 110 can be flexible, semi-rigid or inflexible (e.g., one or more regions flexible and one or more different regions semi-rigid, one or more regions flexible and one or more different regions inflexible). - Typically,
substrate 110 is at least about one micron (e.g., at least about five microns, at least about 10 microns) thick and/or at most about 1,000 microns (e.g., at most about 500 microns thick, at most about 300 microns thick, at most about 200 microns thick, at most about 100 microns, at most about 50 microns) thick. - Generally,
substrate 110 can be colored or non-colored. In some embodiments, one or more portions ofsubstrate 110 is/are colored while one or more different portions ofsubstrate 110 is/are non-colored. -
Substrate 110 can have one planar surface (e.g., the surface on which light impinges), two planar surfaces (e.g., the surface on which light impinges and the opposite surface), or no planar surfaces. A non-planar surface ofsubstrate 110 can, for example, be curved or stepped. In some embodiments, a non-planar surface ofsubstrate 110 is patterned (e.g., having patterned steps to form a Fresnel lens, a lenticular lens or a lenticular prism). -
Hole carrier layer 130 is generally formed of a material that, at the thickness used inphotovoltaic cell 100, transports holes to meshcathode 120 and substantially blocks the transport of electrons to meshcathode 120. Examples of materials from whichlayer 130 can be formed include polythiophenes (e.g., PEDOT), polyanilines, polyvinylcarbazoles, polyphenylenes, polyphenylvinylenes, polysilanes, polythienylenevinylenes and/or polyisothianaphthanenes. In some embodiments,hole carrier layer 130 can include combinations of hole carrier materials. - In general, the distance between the upper surface of hole carrier layer 130 (i.e., the surface of
hole carrier layer 130 in contact with active layer 140) and the upper surface of substrate 110 (i.e., the surface ofsubstrate 110 in contact with mesh electrode 120) can be varied as desired. Typically, the distance between the upper surface ofhole carrier layer 130 and the upper surface ofmesh cathode 120 is at least 0.01 micron (e.g., at least about 0.05 micron, at least about 0.1 micron, at least about 0.2 micron, at least about 0.3 micron, at least about 0.5 micron) and/or at most about five microns (e.g., at most about three microns, at most about two microns, at most about one micron). In some embodiments, the distance between the upper surface ofhole carrier layer 130 and the upper surface ofmesh cathode 120 is from about 0.01 micron to about 0.5 micron. -
Active layer 140 generally contains an electron acceptor material and an electron donor material. - Examples of electron acceptor materials include formed of fullerenes, oxadiazoles, carbon nanorods, discotic liquid crystals, inorganic nanoparticles (e.g., nanoparticles formed of zinc oxide, tungsten oxide, indium phosphide, cadmium selenide and/or lead sulphide), inorganic nanorods (e.g., nanorods formed of zinc oxide, tungsten oxide, indium phosphide, cadmium selenide and/or lead sulphide), or polymers containing moieties capable of accepting electrons or forming stable anions (e.g., polymers containing CN groups, polymers containing CF3 groups). In some embodiments, the electron acceptor material is a substituted fullerene (e.g., PCBM). In some embodiments,
active layer 140 can include a combination of electron acceptor materials. - Examples of electron donor materials include discotic liquid crystals, polythiophenes, polyphenylenes, polyphenylvinylenes, polysilanes, polythienylvinylenes, and polyisothianaphthalenes. In some embodiments, the electron donor material is poly(3-hexylthiophene). In certain embodiments,
active layer 140 can include a combination of electron donor materials. - Generally,
active layer 140 is sufficiently thick to be relatively efficient at absorbing photons impinging thereon to form corresponding electrons and holes, and sufficiently thin to be relatively efficient at transporting the holes and electrons tolayers layer 140 is at least 0.05 micron (e.g., at least about 0.1 micron, at least about 0.2 micron, at least about 0.3 micron) thick and/or at most about one micron (e.g., at most about 0.5 micron, at most about 0.4 micron) thick. In some embodiments,layer 140 is from about 0.1 micron to about 0.2 micron thick. -
Hole blocking layer 150 is general formed of a material that, at the thickness used inphotovoltaic cell 100, transports electrons toanode 160 and substantially blocks the transport of holes toanode 160. Examples of materials from whichlayer 150 can be formed include LiF and metal oxides (e.g., zinc oxide, titanium oxide). - Typically,
hole blocking layer 150 is at least 0.02 micron (e.g., at least about 0.03 micron, at least about 0.04 micron, at least about 0.05 micron) thick and/or at most about 0.5 micron (e.g., at most about 0.4 micron, at most about 0.3 micron, at most about 0.2 micron, at most about 0.1 micron) thick. -
Anode 160 is generally formed of an electrically conductive material, such as one or more of the electrically conductive materials noted above. In some embodiments,anode 160 is formed of a combination of electrically conductive materials. -
Substrate 170 can be formed of a transparent material or a non-transparent material. For example, in embodiments in which photovoltaic cell uses light that passes throughanode 160 during use,substrate 170 is desirably formed of a transparent material. - Exemplary materials from which
substrate 170 can be formed include polyethylene terephthalates, polyimides, polyethylene naphthalates, polymeric hydrocarbons, cellulosic polymers, polycarbonates, polyamides, polyethers and polyether ketones. In certain embodiments, the polymer can be a fluorinated polymer. In some embodiments, combinations of polymeric materials are used. In certain embodiments, different regions ofsubstrate 110 can be formed of different materials. - In general,
substrate 170 can be flexible, semi-rigid or rigid. In some embodiments,substrate 170 has a flexural modulus of less than about 5,000 megaPascals. In certain embodiments, different regions ofsubstrate 170 can be flexible, semi-rigid or inflexible (e.g., one or more regions flexible and one or more different regions semi-rigid, one or more regions flexible and one or more different regions inflexible). Generally,substrate 170 is substantially non-scattering. - Typically,
substrate 170 is at least about one micron (e.g., at least about five microns, at least about 10 microns) thick and/or at most about 200 microns (e.g., at most about 100 microns, at most about 50 microns) thick. - Generally,
substrate 170 can be colored or non-colored. In some embodiments, one or more portions ofsubstrate 170 is/are colored while one or more different portions ofsubstrate 170 is/are non-colored. -
Substrate 170 can have one planar surface (e.g., the surface ofsubstrate 170 on which light impinges in embodiments in which during usephotovoltaic cell 100 uses light that passes through anode 160), two planar surfaces (e.g., the surface ofsubstrate 170 on which light impinges in embodiments in which during usephotovoltaic cell 100 uses light that passes throughanode 160 and the opposite surface of substrate 170), or no planar surfaces. A non-planar surface ofsubstrate 170 can, for example, be curved or stepped. In some embodiments, a non-planar surface ofsubstrate 170 is patterned (e.g., having patterned steps to form a Fresnel lens, a lenticular lens or a lenticular prism). -
FIG. 5 shows a cross-sectional view of aphotovoltaic cell 400 that includes anadhesive layer 410 betweensubstrate 110 andhole carrier layer 130. - Generally, any material capable of holding
mesh cathode 130 in place can be used inadhesive layer 410. In general,adhesive layer 410 is formed of a material that is transparent at the thickness used inphotovoltaic cell 400. Examples of adhesives include epoxies and urethanes. Examples of commercially available materials that can be used inadhesive layer 410 include Bynel™ adhesive (DuPont) and 615 adhesive (3M). In some embodiments,layer 410 can include a fluorinated adhesive. In certain embodiments,layer 410 contains an electrically conductive adhesive. An electrically conductive adhesive can be formed of, for example, an inherently electrically conductive polymer, such as the electrically conductive polymers disclosed above (e.g., PEDOT). An electrically conductive adhesive can be also formed of a polymer (e.g., a polymer that is not inherently electrically conductive) that contains one or more electrically conductive materials (e.g., electrically conductive particles). In some embodiments,layer 410 contains an inherently electrically conductive polymer that contains one or more electrically conductive materials. - In some embodiments, the thickness of layer 410 (i.e., the thickness of
layer 410 in a direction substantially perpendicular to the surface ofsubstrate 110 in contact with layer 410) is less thick than the maximum thickness ofmesh cathode 120. In some embodiments, the thickness oflayer 410 is at most about 90% (e.g., at most about 80%, at most about 70%, at most about 60%, at most about 50%, at most about 40%, at most about 30%, at most about 20%) of the maximum thickness ofmesh cathode 120. In certain embodiments, however, the thickness oflayer 410 is about the same as, or greater than, the maximum thickness ofmesh cathode 130. - In general, a photovoltaic cell having a mesh cathode can be manufactured as desired.
- In some embodiments, a photovoltaic cell can be prepared as follows.
Electrode 160 is formed onsubstrate 170 using conventional techniques, and hole-blocking layer 150 is formed on electrode 160 (e.g., using a vacuum deposition process or a solution coating process).Active layer 140 is formed on hole-blocking layer 150 (e.g., using a solution coating process, such as slot coating, spin coating or gravure coating).Hole carrier layer 130 is formed on active layer 140 (e.g., using a solution coating process, such as slot coating, spin coating or gravure coating).Mesh cathode 120 is partially disposed in hole carrier layer 130 (e.g., by disposingmesh cathode 120 on the surface ofhole carrier layer 130, and pressing mesh cathode 120).Substrate 110 is then formed onmesh cathode 120 andhole carrier layer 130 using conventional methods. - In certain embodiments, a photovoltaic cell can be prepared as follows.
Electrode 160 is formed onsubstrate 170 using conventional techniques, and hole-blocking layer 150 is formed on electrode 160 (e.g., using a vacuum deposition or a solution coating process).Active layer 140 is formed on hole-blocking layer 150 (e.g., using a solution coating process, such as slot coating, spin coating or gravure coating).Hole carrier layer 130 is formed on active layer 140 (e.g., using a solution coating process, such as slot coating, spin coating or gravure coating).Adhesive layer 410 is disposed onhole carrier layer 130 using conventional methods.Mesh cathode 120 is partially disposed inadhesive layer 410 and hole carrier layer 130 (e.g., by disposingmesh cathode 120 on the surface ofadhesive layer 410, and pressing mesh cathode 120).Substrate 110 is then formed onmesh cathode 120 andadhesive layer 410 using conventional methods. - While the foregoing processes involve partially disposing
mesh cathode 120 inhole carrier layer 130, in some embodiments,mesh cathode 120 is formed by printing the cathode material on the surface ofcarrier layer 130 oradhesive layer 410 to provide an electrode having the open structure shown in the figures. For example,mesh cathode 120 can be printed using an inkjet printer, a screen printer, or gravure printer. The cathode material can be disposed in a paste which solidifies upon heating or radiation (e.g., UV radiation, visible radiation, IR radiation, electron beam radiation). The cathode material can be, for example, vacuum deposited in a mesh pattern through a screen or after deposition it may be patterned by photolithography. - Multiple photovoltaic cells can be electrically connected to form a photovoltaic system. As an example,
FIG. 6 is a schematic of aphotovoltaic system 500 having amodule 510 containingphotovoltaic cells 520.Cells 520 are electrically connected in series, andsystem 500 is electrically connected to a load. As another example,FIG. 7 is a schematic of aphotovoltaic system 600 having amodule 610 that containsphotovoltaic cells 620.Cells 620 are electrically connected in parallel, andsystem 600 is electrically connected to a load. In some embodiments, some (e.g., all) of the photovoltaic cells in a photovoltaic system can have one or more common substrates. In certain embodiments, some photovoltaic cells in a photovoltaic system are electrically connected in series, and some of the photovoltaic cells in the photovoltaic system are electrically connected in parallel. - While certain embodiments have been disclosed, other embodiments are also possible.
- As another example, while cathodes formed of mesh have been described, in some embodiments a mesh anode can be used. This can be desirable, for example, when light transmitted by the anode is used. In certain embodiments, both a mesh cathode and a mesh anode are used. This can be desirable, for example, when light transmitted by both the cathode and the anode is used.
- As an example, while embodiments have generally been described in which light that is transmitted via the cathode side of the cell is used, in certain embodiments light transmitted by the anode side of the cell is used (e.g., when a mesh anode is used). In some embodiments, light transmitted by both the cathode and anode sides of the cell is used (when a mesh cathode and a mesh anode are used).
- As a further example, while electrodes (e.g., mesh electrodes, non-mesh electrodes) have been described as being formed of electrically conductive materials, in some embodiments a photovoltaic cell may include one or more electrodes (e.g., one or more mesh electrodes, one or more non-mesh electrodes) formed of a semiconductive material. Examples of semiconductive materials include indium tin oxide, fluorinated tin oxide, tin oxide and zinc oxide.
- As an additional example, in some embodiments, one or more semiconductive materials can be disposed in the open regions of a mesh electrode (e.g., in the open regions of a mesh cathode, in the open regions of a mesh anode, in the open regions of a mesh cathode and the open regions of a mesh anode). Examples of semiconductive materials include tin oxide, fluorinated tin oxide, tin oxide and zinc oxide. Typically, the semiconductive material disposed in an open region of a mesh electrode is transparent at the thickness used in the photovoltaic cell.
- As another example, in certain embodiments, a protective layer can be applied to one or both of the substrates. A protective layer can be used to, for example, keep contaminants (e.g., dirt, water, oxygen, chemicals) out of a photovoltaic cell and/or to ruggedize the cell. In certain embodiments, a protective layer can be formed of a polymer (e.g., a fluorinated polymer).
- As a further example, while certain types of photovoltaic cells have been described that have one or more mesh electrodes, one or more mesh electrodes (mesh cathode, mesh anode, mesh cathode and mesh anode) can be used in other types of photovoltaic cells as well. Examples of such photovoltaic cells include photoactive cells with an active material formed of amorphous silicon, cadmium selenide, cadmium telluride, copper indium sulfide, and copper indium gallium arsenide.
- As an additional example, while described as being formed of different materials, in some embodiments,
materials - As another example, although shown in
FIG. 4 as being formed of one material coated on a different material, in some embodiments solid regions 122 can be formed of more than two coated materials (e.g., three coated materials, four coated materials, five coated materials, six coated materials. - Other embodiments are in the claims.
Claims (22)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/214,585 US20110308604A1 (en) | 2003-03-24 | 2011-08-22 | Photovoltaic cell with mesh electrode |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/395,823 US7022910B2 (en) | 2002-03-29 | 2003-03-24 | Photovoltaic cells utilizing mesh electrodes |
US10/723,554 US20040187911A1 (en) | 2003-03-24 | 2003-11-26 | Photovoltaic cell with mesh electrode |
US13/214,585 US20110308604A1 (en) | 2003-03-24 | 2011-08-22 | Photovoltaic cell with mesh electrode |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/723,554 Continuation US20040187911A1 (en) | 2000-04-27 | 2003-11-26 | Photovoltaic cell with mesh electrode |
Publications (1)
Publication Number | Publication Date |
---|---|
US20110308604A1 true US20110308604A1 (en) | 2011-12-22 |
Family
ID=32988660
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/395,823 Expired - Lifetime US7022910B2 (en) | 2000-04-27 | 2003-03-24 | Photovoltaic cells utilizing mesh electrodes |
US10/723,554 Abandoned US20040187911A1 (en) | 2000-04-27 | 2003-11-26 | Photovoltaic cell with mesh electrode |
US13/214,585 Abandoned US20110308604A1 (en) | 2003-03-24 | 2011-08-22 | Photovoltaic cell with mesh electrode |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/395,823 Expired - Lifetime US7022910B2 (en) | 2000-04-27 | 2003-03-24 | Photovoltaic cells utilizing mesh electrodes |
US10/723,554 Abandoned US20040187911A1 (en) | 2000-04-27 | 2003-11-26 | Photovoltaic cell with mesh electrode |
Country Status (7)
Country | Link |
---|---|
US (3) | US7022910B2 (en) |
EP (1) | EP1606845B1 (en) |
JP (3) | JP5248770B2 (en) |
KR (1) | KR101024876B1 (en) |
AT (1) | ATE486378T1 (en) |
DE (1) | DE602004029770D1 (en) |
WO (1) | WO2004086464A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8987036B2 (en) | 2008-07-02 | 2015-03-24 | Sharp Kabushiki Kaisha | Solar battery module and solar battery array |
Families Citing this family (249)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070084506A1 (en) * | 2005-07-15 | 2007-04-19 | James Ryan | Diffraction foils |
US8664030B2 (en) | 1999-03-30 | 2014-03-04 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US20100108118A1 (en) * | 2008-06-02 | 2010-05-06 | Daniel Luch | Photovoltaic power farm structure and installation |
US8222513B2 (en) | 2006-04-13 | 2012-07-17 | Daniel Luch | Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture |
US7507903B2 (en) | 1999-03-30 | 2009-03-24 | Daniel Luch | Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US8138413B2 (en) | 2006-04-13 | 2012-03-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8076568B2 (en) * | 2006-04-13 | 2011-12-13 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US20090111206A1 (en) * | 1999-03-30 | 2009-04-30 | Daniel Luch | Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture |
US8198696B2 (en) | 2000-02-04 | 2012-06-12 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US7898054B2 (en) * | 2000-02-04 | 2011-03-01 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US20110067754A1 (en) * | 2000-02-04 | 2011-03-24 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US7898053B2 (en) * | 2000-02-04 | 2011-03-01 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US7186911B2 (en) * | 2002-01-25 | 2007-03-06 | Konarka Technologies, Inc. | Methods of scoring for fabricating interconnected photovoltaic cells |
US6900382B2 (en) | 2002-01-25 | 2005-05-31 | Konarka Technologies, Inc. | Gel electrolytes for dye sensitized solar cells |
US6706963B2 (en) * | 2002-01-25 | 2004-03-16 | Konarka Technologies, Inc. | Photovoltaic cell interconnection |
US7351907B2 (en) * | 2002-01-25 | 2008-04-01 | Konarka Technologies, Inc. | Displays with integrated photovoltaic cells |
US7205473B2 (en) * | 2002-01-25 | 2007-04-17 | Konarka Technologies, Inc. | Photovoltaic powered multimedia greeting cards and smart cards |
US6949400B2 (en) | 2002-01-25 | 2005-09-27 | Konarka Technologies, Inc. | Ultrasonic slitting of photovoltaic cells and modules |
US20030192584A1 (en) * | 2002-01-25 | 2003-10-16 | Konarka Technologies, Inc. | Flexible photovoltaic cells and modules formed using foils |
US7022910B2 (en) * | 2002-03-29 | 2006-04-04 | Konarka Technologies, Inc. | Photovoltaic cells utilizing mesh electrodes |
US6913713B2 (en) * | 2002-01-25 | 2005-07-05 | Konarka Technologies, Inc. | Photovoltaic fibers |
US6858158B2 (en) * | 2002-01-25 | 2005-02-22 | Konarka Technologies, Inc. | Low temperature interconnection of nanoparticles |
US20050284513A1 (en) * | 2002-08-08 | 2005-12-29 | Christoph Brabec | Chip card comprising an integrated energy converter |
US20030192585A1 (en) * | 2002-01-25 | 2003-10-16 | Konarka Technologies, Inc. | Photovoltaic cells incorporating rigid substrates |
US7414188B2 (en) * | 2002-01-25 | 2008-08-19 | Konarka Technologies, Inc. | Co-sensitizers for dye sensitized solar cells |
US7323635B2 (en) * | 2001-06-15 | 2008-01-29 | University Of Massachusetts | Photovoltaic cell |
WO2003065472A2 (en) * | 2002-01-25 | 2003-08-07 | Konarka Technologies, Inc. | Structures and materials for dye sensitized solar cells |
US20070251570A1 (en) * | 2002-03-29 | 2007-11-01 | Konarka Technologies, Inc. | Photovoltaic cells utilizing mesh electrodes |
US8507253B2 (en) | 2002-05-13 | 2013-08-13 | Algae Systems, LLC | Photobioreactor cell culture systems, methods for preconditioning photosynthetic organisms, and cultures of photosynthetic organisms produced thereby |
US20050194038A1 (en) * | 2002-06-13 | 2005-09-08 | Christoph Brabec | Electrodes for optoelectronic components and the use thereof |
JP4085421B2 (en) * | 2002-08-23 | 2008-05-14 | ソニー株式会社 | Dye-sensitized photoelectric conversion device and manufacturing method thereof |
JP2005538556A (en) * | 2002-09-05 | 2005-12-15 | コナルカ テクノロジーズ インコーポレイテッド | Organic photovoltaic device and method for producing the same |
JP2004207012A (en) * | 2002-12-25 | 2004-07-22 | Sony Corp | Dye-sensitized photoelectric transducing device and its manufacturing method |
IL153895A (en) * | 2003-01-12 | 2013-01-31 | Orion Solar Systems Ltd | Solar cell device |
JP4674435B2 (en) * | 2003-01-15 | 2011-04-20 | ソニー株式会社 | Photoelectric conversion element |
JP2004234988A (en) * | 2003-01-30 | 2004-08-19 | Sony Corp | Photoelectric conversion element and its manufacturing method, electronic device and its manufacturing method, and semiconductor layer and its manufacturing method |
WO2004085305A2 (en) * | 2003-03-21 | 2004-10-07 | Wayne State University | Metal oxide-containing nanoparticles |
WO2004086462A2 (en) * | 2003-03-24 | 2004-10-07 | Konarka Technologies, Inc. | Photovoltaic cell with mesh electrode |
CN100411195C (en) * | 2003-04-11 | 2008-08-13 | 索尼株式会社 | Photoelectric conversion device, electronic apparatus and electronic apparatus manufacturing method, metal film formation method and layer structure |
EP1513171A1 (en) * | 2003-09-05 | 2005-03-09 | Sony International (Europe) GmbH | Tandem dye-sensitised solar cell and method of its production |
KR101056440B1 (en) * | 2003-09-26 | 2011-08-11 | 삼성에스디아이 주식회사 | Dye-Sensitized Solar Cell |
JP4197637B2 (en) * | 2003-09-29 | 2008-12-17 | 株式会社東芝 | Photosensitized solar cell and manufacturing method thereof |
WO2005045984A1 (en) * | 2003-10-06 | 2005-05-19 | Ngk Spark Plug Co., Ltd. | Dye-sensitized solar cell |
KR100578798B1 (en) * | 2003-12-12 | 2006-05-11 | 삼성에스디아이 주식회사 | Dye-sensitized solar cell and fabrication method thereof |
JP3717506B2 (en) * | 2004-01-20 | 2005-11-16 | シャープ株式会社 | Dye-sensitized solar cell module |
KR100589322B1 (en) * | 2004-02-03 | 2006-06-14 | 삼성에스디아이 주식회사 | High efficient dye-sensitized solar cell and fabrication method thereof |
KR100589323B1 (en) * | 2004-02-03 | 2006-06-14 | 삼성에스디아이 주식회사 | Dye-sensitized solar cell having enlarged wavelength range of absorbed light and fabrication method thereof |
US20080223428A1 (en) * | 2004-04-19 | 2008-09-18 | Zeira Eitan C | All printed solar cell array |
DE102004024461A1 (en) * | 2004-05-14 | 2005-12-01 | Konarka Technologies, Inc., Lowell | Device and method for producing an electronic component with at least one active organic layer |
US7772484B2 (en) * | 2004-06-01 | 2010-08-10 | Konarka Technologies, Inc. | Photovoltaic module architecture |
DE112005001297T5 (en) * | 2004-06-08 | 2007-05-03 | SFC Co., Ltd., Yokohama | Dye solar cell and manufacturing method therefor |
WO2005122321A1 (en) * | 2004-06-08 | 2005-12-22 | Sfc Co., Ltd. | Dye sensitized solar cell and process for producing the same |
KR101001548B1 (en) * | 2004-06-29 | 2010-12-17 | 삼성에스디아이 주식회사 | Dye-sensitive solar cell using photoelectric transformation electrode |
JP2006147261A (en) * | 2004-11-17 | 2006-06-08 | Enplas Corp | Counter electrode of dye-sensitized solar cell and dye-sensitized solar cell |
US20060147616A1 (en) * | 2004-12-20 | 2006-07-06 | Russell Gaudiana | Polymer catalyst for photovoltaic cell |
EP1672653B1 (en) * | 2004-12-20 | 2019-07-17 | Merck Patent GmbH | Patterned photovoltaic cell |
US20070121113A1 (en) * | 2004-12-22 | 2007-05-31 | Cohen David S | Transmission-based optical detection systems |
US20060177567A1 (en) * | 2005-02-05 | 2006-08-10 | Winarski Tyson Y | Window that Generates Solar-powered Electricity via a Plurality of Noncontiguous Solar Cells |
GB2424121A (en) * | 2005-02-11 | 2006-09-13 | Risoe Nat Lab | Solar cell using electrode formed from cotton fabric coated with conductive polymer |
JP4752283B2 (en) * | 2005-02-24 | 2011-08-17 | 富士ゼロックス株式会社 | Solar cell using carbon nanotubes |
JP4856883B2 (en) * | 2005-03-03 | 2012-01-18 | 富士フイルム株式会社 | Functional element, electrochromic element, optical device and photographing unit |
US20070224464A1 (en) * | 2005-03-21 | 2007-09-27 | Srini Balasubramanian | Dye-sensitized photovoltaic cells |
JP2006286534A (en) * | 2005-04-04 | 2006-10-19 | Nippon Oil Corp | Flexible dye sensitized solar cell |
JP4915544B2 (en) * | 2005-05-11 | 2012-04-11 | パナソニック株式会社 | Organic electroluminescence device |
JP2006324111A (en) * | 2005-05-18 | 2006-11-30 | Nippon Oil Corp | Flexible dye-sensitized solar cell |
US20070017566A1 (en) * | 2005-06-13 | 2007-01-25 | Russell Gaudiana | Flexible photovoltaic modules |
US20090050204A1 (en) * | 2007-08-03 | 2009-02-26 | Illuminex Corporation. | Photovoltaic device using nanostructured material |
US20100193768A1 (en) * | 2005-06-20 | 2010-08-05 | Illuminex Corporation | Semiconducting nanowire arrays for photovoltaic applications |
WO2007002376A2 (en) * | 2005-06-24 | 2007-01-04 | Konarka Technologies, Inc. | Method of preparing electrode |
JP2009501448A (en) * | 2005-07-12 | 2009-01-15 | コナルカ テクノロジーズ インコーポレイテッド | Photovoltaic transfer method |
US7781673B2 (en) * | 2005-07-14 | 2010-08-24 | Konarka Technologies, Inc. | Polymers with low band gaps and high charge mobility |
US8158881B2 (en) * | 2005-07-14 | 2012-04-17 | Konarka Technologies, Inc. | Tandem photovoltaic cells |
EP1902297A4 (en) * | 2005-07-14 | 2009-07-15 | Konarka Technologies Inc | Stable organic devices |
US20070181179A1 (en) * | 2005-12-21 | 2007-08-09 | Konarka Technologies, Inc. | Tandem photovoltaic cells |
WO2007011742A2 (en) * | 2005-07-14 | 2007-01-25 | Konarka Technologies, Inc. | Cigs photovoltaic cells |
US20080006324A1 (en) * | 2005-07-14 | 2008-01-10 | Konarka Technologies, Inc. | Tandem Photovoltaic Cells |
US20070267055A1 (en) * | 2005-07-14 | 2007-11-22 | Konarka Technologies, Inc. | Tandem Photovoltaic Cells |
US7772485B2 (en) * | 2005-07-14 | 2010-08-10 | Konarka Technologies, Inc. | Polymers with low band gaps and high charge mobility |
EP1915785B1 (en) * | 2005-08-15 | 2016-04-20 | Merck Patent GmbH | Photovoltaic cells with interconnects to external circuit |
JP4849844B2 (en) * | 2005-08-22 | 2012-01-11 | Jx日鉱日石エネルギー株式会社 | Dye-sensitized solar cell |
EP1917558B1 (en) * | 2005-08-22 | 2018-07-25 | Merck Patent GmbH | Displays with integrated photovoltaic cells |
EP1920468B1 (en) * | 2005-09-01 | 2014-02-26 | Merck Patent GmbH | Photovoltaic cells integrated with bypass diode |
JP5298308B2 (en) * | 2005-09-06 | 2013-09-25 | 国立大学法人京都大学 | Organic thin film photoelectric conversion device and method for producing the same |
US8012530B2 (en) * | 2005-09-06 | 2011-09-06 | Kyoto University | Organic thin-film photoelectric conversion element and method of manufacturing the same |
KR100658263B1 (en) * | 2005-09-29 | 2006-12-14 | 삼성전자주식회사 | Tandem structured photovoltaic cell and preparation method thereof |
US20070079867A1 (en) * | 2005-10-12 | 2007-04-12 | Kethinni Chittibabu | Photovoltaic fibers |
KR100764362B1 (en) * | 2005-11-01 | 2007-10-08 | 삼성전자주식회사 | Transparent electrode for a solar cell, preparaton method thereof and a semiconductor electrode comprising the same |
US7635600B2 (en) | 2005-11-16 | 2009-12-22 | Sharp Laboratories Of America, Inc. | Photovoltaic structure with a conductive nanowire array electrode |
GB2432723B (en) * | 2005-11-25 | 2010-12-08 | Seiko Epson Corp | Electrochemical cell and method of manufacture |
GB2432721B (en) * | 2005-11-25 | 2011-06-22 | Seiko Epson Corp | Electrochemical cell structure and method of fabrication |
US8166649B2 (en) | 2005-12-12 | 2012-05-01 | Nupix, LLC | Method of forming an electroded sheet |
US8106853B2 (en) | 2005-12-12 | 2012-01-31 | Nupix, LLC | Wire-based flat panel displays |
US8089434B2 (en) * | 2005-12-12 | 2012-01-03 | Nupix, LLC | Electroded polymer substrate with embedded wires for an electronic display |
US20070193621A1 (en) * | 2005-12-21 | 2007-08-23 | Konarka Technologies, Inc. | Photovoltaic cells |
JP2009529792A (en) * | 2006-03-09 | 2009-08-20 | コナルカ テクノロジーズ インコーポレイテッド | Photocell |
EP2261980B1 (en) | 2006-04-11 | 2013-06-12 | Merck Patent GmbH | Tandem photovoltaic cells |
US9865758B2 (en) | 2006-04-13 | 2018-01-09 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9236512B2 (en) | 2006-04-13 | 2016-01-12 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9006563B2 (en) | 2006-04-13 | 2015-04-14 | Solannex, Inc. | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8884155B2 (en) | 2006-04-13 | 2014-11-11 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8729385B2 (en) | 2006-04-13 | 2014-05-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8822810B2 (en) | 2006-04-13 | 2014-09-02 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
PL2022108T3 (en) * | 2006-05-01 | 2009-10-30 | Univ Wake Forest | Organic optoelectronic devices and applications thereof |
WO2007130972A2 (en) | 2006-05-01 | 2007-11-15 | Wake Forest University | Fiber photovoltaic devices and applications thereof |
DE102006023638A1 (en) * | 2006-05-18 | 2007-11-22 | Sefar Ag | Photovoltaic cell |
US20070289626A1 (en) * | 2006-06-20 | 2007-12-20 | Konarka Technologies, Inc. | Photovoltaic cells |
US20080149178A1 (en) * | 2006-06-27 | 2008-06-26 | Marisol Reyes-Reyes | Composite organic materials and applications thereof |
US8754323B2 (en) * | 2006-06-29 | 2014-06-17 | National University Corporation Kyushu Institute Of Technology | Dye-sensitized solar cell and process for producing the same |
US8933328B2 (en) * | 2006-07-06 | 2015-01-13 | Sharp Kabushiki Kaisha | Dye-sensitized solar cell module and method of producing the same |
US8110395B2 (en) | 2006-07-10 | 2012-02-07 | Algae Systems, LLC | Photobioreactor systems and methods for treating CO2-enriched gas and producing biomass |
TW200805687A (en) * | 2006-07-11 | 2008-01-16 | Rich Power Technologies Ltd | Dye-sensitized solar cell and method of manufacturing the same |
TWI458103B (en) * | 2006-07-17 | 2014-10-21 | Teijin Dupont Films Japan Ltd | Pigment sensitized solar cells and used electrodes and laminated films |
ATE528803T1 (en) | 2006-08-07 | 2011-10-15 | Univ Wake Forest | PRODUCTION OF ORGANIC COMPOSITE MATERIALS |
DE102006045514B4 (en) * | 2006-08-16 | 2012-04-05 | Saint-Gobain Sekurit Deutschland Gmbh & Co. Kg | Transparent surface electrode |
JP2008085323A (en) * | 2006-08-31 | 2008-04-10 | National Institute Of Advanced Industrial & Technology | Transparent electrode substrate for solar cell |
WO2008088595A2 (en) | 2006-10-11 | 2008-07-24 | Konarka Technologies, Inc. | Photovoltaic cell with silole-containing polymer |
US8008421B2 (en) | 2006-10-11 | 2011-08-30 | Konarka Technologies, Inc. | Photovoltaic cell with silole-containing polymer |
US8008424B2 (en) | 2006-10-11 | 2011-08-30 | Konarka Technologies, Inc. | Photovoltaic cell with thiazole-containing polymer |
US20080092947A1 (en) * | 2006-10-24 | 2008-04-24 | Applied Materials, Inc. | Pulse plating of a low stress film on a solar cell substrate |
US20100096004A1 (en) * | 2006-10-25 | 2010-04-22 | Unidym, Inc. | Solar cell with nanostructure electrode(s) |
US9112447B2 (en) * | 2006-11-03 | 2015-08-18 | Solera Laboratories, Inc. | Nano power cell and method of use |
US8319092B1 (en) | 2006-11-03 | 2012-11-27 | Solera Laboratories, Inc. | Nano power cell and method of use |
CN100505325C (en) * | 2006-11-10 | 2009-06-24 | 北京大学 | Dye sensitization solar cell and working electrode thereof |
US7799182B2 (en) | 2006-12-01 | 2010-09-21 | Applied Materials, Inc. | Electroplating on roll-to-roll flexible solar cell substrates |
US20080128019A1 (en) * | 2006-12-01 | 2008-06-05 | Applied Materials, Inc. | Method of metallizing a solar cell substrate |
US7736928B2 (en) * | 2006-12-01 | 2010-06-15 | Applied Materials, Inc. | Precision printing electroplating through plating mask on a solar cell substrate |
US7704352B2 (en) * | 2006-12-01 | 2010-04-27 | Applied Materials, Inc. | High-aspect ratio anode and apparatus for high-speed electroplating on a solar cell substrate |
JP5172166B2 (en) * | 2007-02-13 | 2013-03-27 | 学校法人桐蔭学園 | Dye-sensitized solar cell production kit |
JP2008235521A (en) * | 2007-03-20 | 2008-10-02 | Sanyo Electric Co Ltd | Method of fracturing semiconductor substrate, method of fracturing solar cell, and the solar cell |
JP5649954B2 (en) * | 2007-04-02 | 2015-01-07 | メルク パテント ゲーエムベーハー | Articles configured as photovoltaic cells |
EP2134643A4 (en) * | 2007-04-13 | 2013-08-21 | Rice University | Synthesis of uniform nanoparticle shapes with high selectivity |
EP2152848A2 (en) | 2007-04-27 | 2010-02-17 | Greenfuel Technologies Corporation | Photobioreactor systems positioned on bodies of water |
WO2008134492A1 (en) | 2007-04-27 | 2008-11-06 | Konarka Technologies, Inc. | Organic photovoltaic cells |
EP2158612A4 (en) * | 2007-05-15 | 2017-04-19 | 3GSolar Photovoltaics Ltd. | Photovoltaic cell |
DE102007050680A1 (en) | 2007-10-22 | 2009-05-28 | Leonhard Kurz Gmbh & Co. Kg | Sheet structure, especially polymer-based photovoltaic element, e.g. for solar cell, comprises supporting grating with lattice openings covered by skin of viscous coating material |
EP2210292A2 (en) * | 2007-11-01 | 2010-07-28 | Wake Forest University | Lateral organic optoelectronic devices and applications thereof |
TWI438906B (en) * | 2007-12-20 | 2014-05-21 | Cima Nanotech Israel Ltd | Photovoltaic device having transparent electrode formed with nanoparticles |
JP4951497B2 (en) * | 2007-12-27 | 2012-06-13 | 株式会社日立製作所 | Organic thin film solar cell and method for producing the same |
JP2009182095A (en) * | 2008-01-30 | 2009-08-13 | Fujifilm Corp | Photoelectric converting element and solid-state image pickup element |
WO2009137141A2 (en) * | 2008-02-21 | 2009-11-12 | Konarka Technologies, Inc. | Tandem photovoltaic cells |
US20090211623A1 (en) * | 2008-02-25 | 2009-08-27 | Suniva, Inc. | Solar module with solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation |
US8076175B2 (en) * | 2008-02-25 | 2011-12-13 | Suniva, Inc. | Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation |
CN101983410A (en) * | 2008-02-26 | 2011-03-02 | 戴索有限公司 | A sub-assembly for use in fabricating photo- electrochemical devices and a method of producing a sub-assembly |
US20090218651A1 (en) * | 2008-02-28 | 2009-09-03 | Sunlight Photonics Inc. | Composite substrates for thin film electro-optical devices |
US20090229667A1 (en) * | 2008-03-14 | 2009-09-17 | Solarmer Energy, Inc. | Translucent solar cell |
US20100175749A1 (en) * | 2008-03-24 | 2010-07-15 | Tsutsumi Eishi | Solar cell and method for manufacturing metal electrode layer to be used in the solar cell |
DE102008021655B4 (en) * | 2008-04-30 | 2012-06-06 | Saint-Gobain Sekurit Deutschland Gmbh & Co. Kg | Radiation source and solar cell |
US8455606B2 (en) * | 2008-08-07 | 2013-06-04 | Merck Patent Gmbh | Photoactive polymers |
WO2010017590A1 (en) * | 2008-08-12 | 2010-02-18 | Dyesol Ltd | Current collector systems for use in flexible photoelectrical and display devices and methods of fabrication |
WO2010023860A1 (en) * | 2008-08-29 | 2010-03-04 | 新日鐵化学株式会社 | Dye-sensitized solar cell and method for manufacturing same |
US20100065113A1 (en) * | 2008-09-18 | 2010-03-18 | Diau Eric Wei-Guang | Grooved dye-sensitized solar cell structure and method for fabricating the same |
US20100065114A1 (en) * | 2008-09-18 | 2010-03-18 | Diau Eric Wei-Guang | Dye-sensitized solar cell structure and method for fabricating the same |
US8367798B2 (en) * | 2008-09-29 | 2013-02-05 | The Regents Of The University Of California | Active materials for photoelectric devices and devices that use the materials |
JP2010087339A (en) * | 2008-10-01 | 2010-04-15 | Fujifilm Corp | Organic solar cell element |
DE102008055969A1 (en) * | 2008-11-05 | 2010-06-10 | Sefar Ag | Substrate for an optoelectronic device |
WO2010059498A2 (en) * | 2008-11-18 | 2010-05-27 | Konarka Technologies, Inc. | Dye sensitized photovoltaic cell |
US20100126849A1 (en) * | 2008-11-24 | 2010-05-27 | Applied Materials, Inc. | Apparatus and method for forming 3d nanostructure electrode for electrochemical battery and capacitor |
JP4985717B2 (en) * | 2008-12-04 | 2012-07-25 | 大日本印刷株式会社 | Organic thin film solar cell and method for producing the same |
DE202008017971U1 (en) * | 2008-12-20 | 2011-04-14 | Saint-Gobain Sekurit Deutschland Gmbh & Co. Kg | Thin-film solar cell with conductor track electrode |
WO2010083161A1 (en) | 2009-01-13 | 2010-07-22 | Konarka Technologies, Inc. | Photovoltaic module |
WO2010090226A1 (en) * | 2009-02-03 | 2010-08-12 | 株式会社昭和 | Dye-sensitized solar cell |
US20100224252A1 (en) | 2009-03-05 | 2010-09-09 | Konarka Technologies, Inc. | Photovoltaic Cell Having Multiple Electron Donors |
US8895849B2 (en) * | 2009-03-06 | 2014-11-25 | Nec Corporation | Photoelectric conversion element, manufacturing method thereof, optical sensor, and solar cell |
KR20110129959A (en) | 2009-03-17 | 2011-12-02 | 코나르카 테크놀로지, 인코포레이티드 | Metal substrate for a dye sensitized photovolatic cell |
WO2010122433A2 (en) | 2009-04-22 | 2010-10-28 | Koninklijke Philips Electronics N.V. | Imaging measurement system with a printed organic photodiode array |
US20100276071A1 (en) * | 2009-04-29 | 2010-11-04 | Solarmer Energy, Inc. | Tandem solar cell |
WO2010138414A1 (en) | 2009-05-27 | 2010-12-02 | Konarka Technologies, Inc. | Reflective multilayer electrode |
FR2946459B1 (en) * | 2009-06-05 | 2011-08-05 | Centre Nat Etd Spatiales | STRUCTURAL ELEMENT FOR SOLAR PANEL, AND STRUCTURE COMPRISING SUCH A ELEMENT |
US8440496B2 (en) * | 2009-07-08 | 2013-05-14 | Solarmer Energy, Inc. | Solar cell with conductive material embedded substrate |
US8372945B2 (en) * | 2009-07-24 | 2013-02-12 | Solarmer Energy, Inc. | Conjugated polymers with carbonyl substituted thieno[3,4-B]thiophene units for polymer solar cell active layer materials |
US20110048489A1 (en) * | 2009-09-01 | 2011-03-03 | Gabriel Karim M | Combined thermoelectric/photovoltaic device for high heat flux applications and method of making the same |
US20110048488A1 (en) * | 2009-09-01 | 2011-03-03 | Gabriel Karim M | Combined thermoelectric/photovoltaic device and method of making the same |
TWI402992B (en) * | 2009-10-23 | 2013-07-21 | Ind Tech Res Inst | Solar cell and method for fabricating the same |
KR101030014B1 (en) * | 2009-11-09 | 2011-04-20 | 삼성에스디아이 주식회사 | Photoelectric conversion device |
US8399889B2 (en) | 2009-11-09 | 2013-03-19 | Solarmer Energy, Inc. | Organic light emitting diode and organic solar cell stack |
JP4868058B2 (en) * | 2009-11-16 | 2012-02-01 | 大日本印刷株式会社 | Dye-sensitized solar cell |
JP5566082B2 (en) * | 2009-11-16 | 2014-08-06 | 日新製鋼株式会社 | Counter electrode of dye-sensitized solar cell, method for producing the same, and battery |
JP2011108463A (en) * | 2009-11-16 | 2011-06-02 | Nisshin Steel Co Ltd | Photoelectrode of dye-sensitized solar cell, its manufacturing method, and battery |
EP3134458B1 (en) | 2010-01-05 | 2023-11-01 | Raynergy Tek Inc. | Photovoltaic cell with benzodithiophene-containing polymer |
JP4935910B2 (en) * | 2010-01-07 | 2012-05-23 | 大日本印刷株式会社 | Organic thin film solar cell |
KR101112212B1 (en) * | 2010-01-27 | 2012-02-24 | 주식회사 이건창호 | Manufacturing method for dye sensitized solar cell and dye sensitized solar cell manufactured by the same |
JP5655325B2 (en) * | 2010-02-26 | 2015-01-21 | Tdk株式会社 | Electrolyte composition for dye-sensitized solar cell and dye-sensitized solar cell |
WO2011112701A1 (en) | 2010-03-09 | 2011-09-15 | Konarka Technologies, Inc. | Photovoltaic module containing buffer layer |
US9129751B2 (en) * | 2010-03-29 | 2015-09-08 | Northern Illinois University | Highly efficient dye-sensitized solar cells using microtextured electron collecting anode and nanoporous and interdigitated hole collecting cathode and method for making same |
WO2011127131A1 (en) | 2010-04-06 | 2011-10-13 | Konarka Technologies, Inc. | Novel electrode |
US20110277822A1 (en) * | 2010-05-11 | 2011-11-17 | Honeywell International Inc. | Composite electron conductor for use in photovoltaic devices |
US8802479B2 (en) * | 2010-06-03 | 2014-08-12 | NuvoSun, Inc. | Solar cell interconnection method using a flat metallic mesh |
EP2398086A1 (en) | 2010-06-17 | 2011-12-21 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Opto-electric device and method of manufacturing thereof |
WO2011160021A2 (en) | 2010-06-17 | 2011-12-22 | Konarka Technologies, Inc. | Fullerene derivatives |
US9214639B2 (en) * | 2010-06-24 | 2015-12-15 | Massachusetts Institute Of Technology | Conductive polymer on a textured or plastic substrate |
KR101137378B1 (en) * | 2010-07-16 | 2012-04-20 | 삼성에스디아이 주식회사 | Dye-sensitized solar cell |
US8929054B2 (en) * | 2010-07-21 | 2015-01-06 | Cleanvolt Energy, Inc. | Use of organic and organometallic high dielectric constant material for improved energy storage devices and associated methods |
CN105731372B (en) | 2010-09-02 | 2018-07-10 | 默克专利股份有限公司 | Photovoltaic cell containing optical active polymer |
JP2013537000A (en) | 2010-09-07 | 2013-09-26 | ダウ グローバル テクノロジーズ エルエルシー | Improved photovoltaic cell assembly |
JP5629010B2 (en) | 2010-09-17 | 2014-11-19 | ダウ グローバル テクノロジーズ エルエルシー | Improved photovoltaic cell assembly and method |
KR101172206B1 (en) * | 2010-10-06 | 2012-08-07 | 엘지이노텍 주식회사 | Solar cell |
US8404000B2 (en) * | 2010-10-14 | 2013-03-26 | Industrial Technology Research Institute | Organic dye, composite dye and dye-sensitized solar cells using the same |
TWI474524B (en) * | 2010-11-29 | 2015-02-21 | Univ Kun Shan | Preparation of the high efferent flexible polymeric solar cell |
KR101279586B1 (en) * | 2011-01-20 | 2013-06-27 | 한국과학기술연구원 | Flexible electrodes and preparation method thereof, and flexible dye-sensitized solar cells using the same |
JP2012186310A (en) | 2011-03-04 | 2012-09-27 | Three M Innovative Properties Co | Photovoltaic power generation film |
PT2690676T (en) | 2011-03-22 | 2021-03-30 | Efacec Engenharia E Sist S A | Substrate and electrode for solar cells and corresponding manufacturing process |
KR101270808B1 (en) * | 2011-03-31 | 2013-06-05 | 부산대학교 산학협력단 | Electronic Device Built-In with Mesh Electrodes And Manufacturing Method Thereof |
JP5616272B2 (en) * | 2011-03-31 | 2014-10-29 | 富士フイルム株式会社 | Organic semiconductor polymer, composition for organic semiconductor material, and photovoltaic cell |
CN102208563B (en) * | 2011-04-18 | 2013-01-30 | 电子科技大学 | Substrate for flexible luminescent device and preparation method thereof |
EP2702048B1 (en) | 2011-04-28 | 2019-01-23 | Merck Patent GmbH | Novel photoactive polymers |
JP2014513443A (en) | 2011-05-09 | 2014-05-29 | メルク パテント ゲーエムベーハー | Multi-junction photovoltaic cell |
US8865298B2 (en) | 2011-06-29 | 2014-10-21 | Eastman Kodak Company | Article with metal grid composite and methods of preparing |
KR101189578B1 (en) * | 2011-09-07 | 2012-10-11 | 현대자동차주식회사 | Dye-sensitized solar cell |
US20130061929A1 (en) * | 2011-09-12 | 2013-03-14 | Konica Minolta Business Technologies, Inc. | Photoelectric conversion element, method for producing photoelectric conversion element, and solar cell |
EP2761675A2 (en) | 2011-09-29 | 2014-08-06 | Dow Global Technologies LLC | Photovoltaic cell interconnect |
US20140352753A1 (en) | 2011-09-29 | 2014-12-04 | Dow Global Technologies Llc | Photovoltaic cell interconnect |
TWI443846B (en) * | 2011-11-01 | 2014-07-01 | Ind Tech Res Inst | Structure of transparent conductors |
WO2013082091A2 (en) | 2011-11-29 | 2013-06-06 | Dow Global Technologies Llc | Method of forming a photovoltaic cell |
MX339530B (en) | 2011-12-07 | 2016-05-30 | Nuvosun Inc | Automated flexible solar cell fabrication and interconnection utilizing rolls expanded metallic mesh. |
IN2014CN04167A (en) | 2011-12-08 | 2015-07-17 | Dow Global Technologies Llc | |
CN103178151A (en) * | 2011-12-22 | 2013-06-26 | 亚树科技股份有限公司 | Silicon-based thin film solar cell |
US9545612B2 (en) * | 2012-01-13 | 2017-01-17 | California Institute Of Technology | Solar fuel generator |
US10026560B2 (en) * | 2012-01-13 | 2018-07-17 | The California Institute Of Technology | Solar fuels generator |
KR101410814B1 (en) * | 2012-02-13 | 2014-07-02 | 한국전기연구원 | flexible photovoltaic cell using fiber |
CN104662672A (en) * | 2012-03-15 | 2015-05-27 | 3M创新有限公司 | Durable photovoltaic modules |
CN110246918A (en) | 2012-03-27 | 2019-09-17 | 3M创新有限公司 | Photovoltaic module and preparation method thereof including light orientation medium |
US20130263925A1 (en) | 2012-04-05 | 2013-10-10 | Merck Patent Gmbh | Hole Carrier Layer For Organic Photovoltaic Device |
US9991463B2 (en) * | 2012-06-14 | 2018-06-05 | Universal Display Corporation | Electronic devices with improved shelf lives |
US9379261B2 (en) * | 2012-08-09 | 2016-06-28 | The Board Of Trustees Of The Leland Stanford Junior University | Ultra thin film nanostructured solar cell |
CN104854721A (en) * | 2012-12-07 | 2015-08-19 | 松下知识产权经营株式会社 | Photoelectric conversion element |
CN104584162A (en) * | 2012-12-14 | 2015-04-29 | 积水化学工业株式会社 | Electrode substrate and dye-sensitized solar cell |
JP2014143333A (en) * | 2013-01-25 | 2014-08-07 | Ricoh Co Ltd | Solid dye-sensitized solar cell and solid dye-sensitized solar cell module |
US8916038B2 (en) | 2013-03-13 | 2014-12-23 | Gtat Corporation | Free-standing metallic article for semiconductors |
US8936709B2 (en) | 2013-03-13 | 2015-01-20 | Gtat Corporation | Adaptable free-standing metallic article for semiconductors |
US20160071655A1 (en) * | 2013-04-04 | 2016-03-10 | The Regents Of The University Of California | Electrochemical solar cells |
US9405164B2 (en) | 2013-08-21 | 2016-08-02 | Board Of Trustees Of Northern Illinois University | Electrochromic device having three-dimensional electrode |
EP3078067B1 (en) * | 2013-12-08 | 2020-02-05 | Solarpaint Ltd. | Solar paint material and painting system using the same |
KR101600786B1 (en) * | 2014-02-24 | 2016-03-08 | 광주과학기술원 | Manufacturing method for the dye-sensitized solar cell sub-module |
US9054238B1 (en) | 2014-02-26 | 2015-06-09 | Gtat Corporation | Semiconductor with silver patterns having pattern segments |
US9518872B2 (en) * | 2014-10-14 | 2016-12-13 | Kidde Technologies, Inc. | Thermal sensor |
JP2016219657A (en) * | 2015-05-22 | 2016-12-22 | 大阪瓦斯株式会社 | Photoelectric conversion device and manufacturing method for the same |
EP3362744A4 (en) | 2015-10-12 | 2019-06-12 | 3M Innovative Properties Company | Light redirecting film useful with solar modules |
WO2017118481A1 (en) * | 2016-01-07 | 2017-07-13 | Kd Innovation Ltd. | Electrochemical systems for direct generation of electricity and heat pumping |
WO2018017320A1 (en) * | 2016-07-21 | 2018-01-25 | The Regents Of The University Of California | Solar fuel generator including a catalytic mesh |
EP3523835B1 (en) | 2016-10-05 | 2022-11-16 | Raynergy Tek Inc. | Organic photodetector |
US10782014B2 (en) | 2016-11-11 | 2020-09-22 | Habib Technologies LLC | Plasmonic energy conversion device for vapor generation |
US10283712B1 (en) * | 2017-09-14 | 2019-05-07 | Google Llc | Paint circuits |
TWI641010B (en) * | 2017-11-29 | 2018-11-11 | 住華科技股份有限公司 | Pressure sensitive adhesive composition, electrode composite film and manufacturing method for the same |
US10490682B2 (en) | 2018-03-14 | 2019-11-26 | National Mechanical Group Corp. | Frame-less encapsulated photo-voltaic solar panel supporting solar cell modules encapsulated within multiple layers of optically-transparent epoxy-resin materials |
PL425137A1 (en) * | 2018-04-05 | 2019-10-07 | Blue Dot Solutions Spółka Z Ograniczoną Odpowiedzialnością | Netlike panel of a satellite energy source |
AU2019343155A1 (en) * | 2018-09-21 | 2021-01-28 | Ambient Photonics, Inc. | Dye sensitized photovoltaic cells |
EP4012793A1 (en) | 2020-12-14 | 2022-06-15 | Raynergy Tek Incorporation | Photodiode |
CN113421977B (en) * | 2021-05-26 | 2022-10-04 | 华为技术有限公司 | Solar cell, preparation method thereof, intelligent glasses and electronic equipment |
GB202114149D0 (en) * | 2021-10-04 | 2021-11-17 | Univ Swansea | Electrode |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5158618A (en) * | 1990-02-09 | 1992-10-27 | Biophotonics, Inc. | Photovoltaic cells for converting light energy to electric energy and photoelectric battery |
Family Cites Families (115)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US358765A (en) * | 1887-03-01 | Casting gar-wheels | ||
NL192903A (en) * | 1954-03-05 | |||
US3442007A (en) * | 1966-12-29 | 1969-05-06 | Kewanee Oil Co | Process of attaching a collector grid to a photovoltaic cell |
US3597072A (en) | 1968-10-03 | 1971-08-03 | Owens Illinois Inc | Electrode configuration for electrophotography |
DE2112812C2 (en) * | 1971-03-17 | 1984-02-09 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Semiconductor component with lattice-shaped metal electrode and method for its production |
US3786307A (en) | 1972-06-23 | 1974-01-15 | Atronics Corp | Solid state electroluminescent x-y display panels |
NL7309000A (en) | 1973-06-28 | 1974-12-31 | ||
NL7412756A (en) | 1974-09-27 | 1976-03-30 | Philips Nv | TELEVISION RECORDING TUBE. |
US4105470A (en) * | 1977-06-01 | 1978-08-08 | The United States Government As Represented By The United States Department Of Energy | Dye-sensitized schottky barrier solar cells |
GB2018513B (en) * | 1978-02-28 | 1982-05-06 | Snia Viscosa | Process and cell for directly converting radiant energy toelectrical energy |
JPS5536950A (en) * | 1978-09-05 | 1980-03-14 | Fuji Photo Film Co Ltd | Manufacturing of thin film photocell |
US4239555A (en) * | 1979-07-30 | 1980-12-16 | Mobil Tyco Solar Energy Corporation | Encapsulated solar cell array |
DE3013991A1 (en) * | 1980-04-11 | 1981-10-15 | Bayer Ag, 5090 Leverkusen | LARGE-SCALE PHOTOVOLTAIC CELL |
US4380112A (en) * | 1980-08-25 | 1983-04-19 | Spire Corporation | Front surface metallization and encapsulation of solar cells |
US4419424A (en) * | 1981-07-14 | 1983-12-06 | Julian John D | Electrodes for electrochemical cells current generating cells and rechargeable accumulators |
US4518894A (en) | 1982-07-06 | 1985-05-21 | Burroughs Corporation | Display panel having memory |
JPS5983327A (en) | 1982-11-04 | 1984-05-14 | Hitachi Ltd | Photo-electric transducer |
JPS5996639A (en) | 1982-11-26 | 1984-06-04 | Hitachi Ltd | Image pickup tube |
US4563617A (en) | 1983-01-10 | 1986-01-07 | Davidson Allen S | Flat panel television/display |
JPS6079779A (en) * | 1983-10-05 | 1985-05-07 | Sharp Corp | Solar cell with amorphous thin-film |
JPS61140037A (en) | 1984-12-12 | 1986-06-27 | Matsushita Electric Ind Co Ltd | Color image display device |
JPH07101598B2 (en) | 1986-06-27 | 1995-11-01 | 株式会社日立製作所 | Camera tube |
JPS63289874A (en) * | 1987-05-21 | 1988-11-28 | Ricoh Co Ltd | Optoelectric transducer |
US5365357A (en) * | 1988-04-21 | 1994-11-15 | Asahi Glass Company Ltd. | Color liquid crystal display having color filters and light blocking layers in the periphery |
JPH02164079A (en) * | 1988-12-19 | 1990-06-25 | Hitachi Ltd | Amorphous silicon solar cell |
JPH03157976A (en) * | 1989-11-15 | 1991-07-05 | Sanyo Electric Co Ltd | Photovoltaic device |
US5131065A (en) | 1991-03-06 | 1992-07-14 | The Boeing Company | High luminance and contrast flat display panel |
US5293564A (en) | 1991-04-30 | 1994-03-08 | Texas Instruments Incorporated | Address match scheme for DRAM redundancy scheme |
US5287169A (en) | 1991-05-03 | 1994-02-15 | Brooklyn College Research And Development Foundation | Contractless mode of electroreflectance |
US5240510A (en) * | 1991-09-23 | 1993-08-31 | Development Products Inc. | Photovoltaic cell |
FR2694451B1 (en) * | 1992-07-29 | 1994-09-30 | Asulab Sa | Photovoltaic cell. |
US5331183A (en) | 1992-08-17 | 1994-07-19 | The Regents Of The University Of California | Conjugated polymer - acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells |
JPH06176704A (en) | 1992-12-02 | 1994-06-24 | Nippon Hoso Kyokai <Nhk> | Camera device and operation method thereof |
JPH06204529A (en) * | 1992-12-28 | 1994-07-22 | Canon Inc | Solar cell |
US5455899A (en) | 1992-12-31 | 1995-10-03 | International Business Machines Corporation | High speed image data processing circuit |
US5617203A (en) | 1993-10-01 | 1997-04-01 | Hamamatsu Photonics K.K. | Optical detector employing an optically-addressed spatial light modulator |
US5474620A (en) * | 1994-05-16 | 1995-12-12 | United Solar Systems Corporation | Cut resistant laminate for the light incident surface of a photovoltaic module |
JPH0836977A (en) | 1994-07-22 | 1996-02-06 | Ise Electronics Corp | Cover glass for fluorescent display tube |
JPH0873834A (en) * | 1994-09-09 | 1996-03-19 | Tokyo Gas Co Ltd | Organic thin film and photofunctional element |
JPH0875543A (en) * | 1994-09-09 | 1996-03-22 | Tokyo Gas Co Ltd | Photoelectric converision element |
JP2992464B2 (en) * | 1994-11-04 | 1999-12-20 | キヤノン株式会社 | Covering wire for current collecting electrode, photovoltaic element using the covering wire for current collecting electrode, and method of manufacturing the same |
JPH08287969A (en) * | 1995-04-13 | 1996-11-01 | Murata Mfg Co Ltd | Photocell |
FR2755770B1 (en) * | 1996-11-12 | 1999-01-22 | Sextant Avionique | HELMET WITH NIGHT VISION SYSTEM AND SUBSTITUTE OPTICS FOR DAY VISION |
EP0859385A1 (en) | 1997-02-17 | 1998-08-19 | Monsanto Company | Method for the manufacture of photovoltaic cell |
EP0859386A1 (en) | 1997-02-17 | 1998-08-19 | Monsanto Company | Photovoltaic cell |
CN1153253C (en) | 1997-03-21 | 2004-06-09 | 佳能株式会社 | Image-formation device |
JPH10321883A (en) * | 1997-05-16 | 1998-12-04 | Semiconductor Energy Lab Co Ltd | Solar battery and manufacture thereof |
DE69823706T2 (en) | 1997-10-23 | 2005-04-28 | Fuji Photo Film Co. Ltd., Minamiashigara | Photoelectric conversion assembly and photoelectrochemical cell |
DE29720192U1 (en) * | 1997-11-14 | 1999-03-25 | Kuesters Eduard Maschf | Calender for treating a web |
US6077712A (en) * | 1997-12-03 | 2000-06-20 | Trw Inc. | Semiconductor chemical sensor |
JPH11185836A (en) | 1997-12-16 | 1999-07-09 | Fuji Photo Film Co Ltd | Photoelectric conversion element and light reproducing electrochemical cell |
GB9806066D0 (en) | 1998-03-20 | 1998-05-20 | Cambridge Display Tech Ltd | Multilayer photovoltaic or photoconductive devices |
JPH11273753A (en) | 1998-03-25 | 1999-10-08 | Sekisui Chem Co Ltd | Coloring matter sensitizing type photocell |
US6078643A (en) | 1998-05-07 | 2000-06-20 | Infimed, Inc. | Photoconductor-photocathode imager |
US6037005A (en) | 1998-05-12 | 2000-03-14 | 3M Innovative Properties Company | Display substrate electrodes with auxiliary metal layers for enhanced conductivity |
DE19822024A1 (en) | 1998-05-15 | 1999-11-18 | Aventis Res & Tech Gmbh & Co | Chip card for use as a check, electronic travel, phone or car park card and for access controls or pay-TV etc. |
US6444189B1 (en) | 1998-05-18 | 2002-09-03 | E. I. Du Pont De Nemours And Company | Process for making and using titanium oxide particles |
WO1999063614A1 (en) * | 1998-05-29 | 1999-12-09 | Catalysts & Chemicals Industries Co., Ltd. | Method of manufacturing photoelectric cell and oxide semiconductor for photoelectric cell |
NL1009432C2 (en) | 1998-06-18 | 1999-12-21 | Stichting Energie | A method of manufacturing a liquid-containing photovoltaic element and an element manufactured according to this method. |
NL1009431C2 (en) | 1998-06-18 | 1999-12-27 | Stichting Energie | Inverted dye-sensitized photovoltaic cell. |
EP0969517B1 (en) | 1998-07-04 | 2005-10-12 | International Business Machines Corporation | Electrode for use in electro-optical devices |
US6451415B1 (en) * | 1998-08-19 | 2002-09-17 | The Trustees Of Princeton University | Organic photosensitive optoelectronic device with an exciton blocking layer |
MX239894B (en) | 1998-08-19 | 2006-08-30 | Univ Princeton | Organic photosensitive optoelectronic device |
DE19905694A1 (en) * | 1998-11-27 | 2000-08-17 | Forschungszentrum Juelich Gmbh | Component |
EP1149326A1 (en) | 1998-12-21 | 2001-10-31 | E Ink Corporation | Protective electrodes for electrophoretic displays |
ATE231281T1 (en) | 1999-02-08 | 2003-02-15 | Kurth Glas & Spiegel Ag | PHOTOVOLTAIC CELL AND METHOD FOR THE PRODUCTION THEREOF |
JP2000243990A (en) * | 1999-02-18 | 2000-09-08 | Dainippon Printing Co Ltd | Solar-cell cover film and manufacture thereof, and solar-cell module using same |
AUPP931799A0 (en) | 1999-03-18 | 1999-04-15 | Sustainable Technologies Australia Limited | Methods to implement interconnects in multi-cell regenerative photovoltaic photoelectrochemical devices |
JP4043135B2 (en) * | 1999-03-29 | 2008-02-06 | 株式会社東芝 | Functional element and multi-component multi-phase polymer molding |
JP2000294306A (en) * | 1999-04-06 | 2000-10-20 | Fuji Photo Film Co Ltd | Photoelectric converting element and photoelectric chemical battery |
US6291763B1 (en) * | 1999-04-06 | 2001-09-18 | Fuji Photo Film Co., Ltd. | Photoelectric conversion device and photo cell |
AU4418800A (en) | 1999-04-23 | 2000-11-10 | Imperial College Of Science, Technology And Medicine | Photovoltaic devices |
GB9909440D0 (en) | 1999-04-23 | 1999-06-23 | Unilever Plc | Package for dispensing a flowable cosmetic composition and product |
EP1052661B1 (en) | 1999-05-14 | 2011-11-02 | FUJIFILM Corporation | Metal complex dye for a photoelectrochemical cell |
US6359211B1 (en) | 1999-06-17 | 2002-03-19 | Chemmotif, Inc. | Spectral sensitization of nanocrystalline solar cells |
EP1119068B1 (en) * | 1999-06-30 | 2012-11-28 | JGC Catalysts and Chemicals Ltd. | Photoelectric cell |
JP2001031962A (en) | 1999-07-23 | 2001-02-06 | Nippon Telegr & Teleph Corp <Ntt> | Luminescent material and electroluminescent element prepared by using same |
DE60027512T2 (en) * | 1999-08-04 | 2006-10-12 | Fuji Photo Film Co., Ltd., Minami-Ashigara | Electrolyte composition and photochemical cell |
JP4320869B2 (en) | 1999-10-04 | 2009-08-26 | パナソニック電工株式会社 | Method for manufacturing photoelectric conversion element |
WO2001031333A1 (en) * | 1999-10-26 | 2001-05-03 | Genometrix Genomics Incorporated | Process for requesting biological experiments and for the delivery of experimental information |
JP2001168359A (en) | 1999-12-10 | 2001-06-22 | Fuji Photo Film Co Ltd | Photoelectric transfer element and photoelectric cell |
JP3614335B2 (en) | 1999-12-28 | 2005-01-26 | 三星エスディアイ株式会社 | Organic EL display device and manufacturing method thereof |
JP2001243995A (en) * | 2000-02-29 | 2001-09-07 | Fuji Photo Film Co Ltd | Photoelectric conversion element and photoelectric cell |
JP2002014343A (en) | 2000-04-26 | 2002-01-18 | Nec Corp | Liquid crystal display device, light emitting element and method for manufacturing liquid crystal display device |
SE0103740D0 (en) * | 2001-11-08 | 2001-11-08 | Forskarpatent I Vaest Ab | Photovoltaic element and production methods |
US6913713B2 (en) * | 2002-01-25 | 2005-07-05 | Konarka Technologies, Inc. | Photovoltaic fibers |
US7022910B2 (en) * | 2002-03-29 | 2006-04-04 | Konarka Technologies, Inc. | Photovoltaic cells utilizing mesh electrodes |
JP2002008549A (en) | 2000-06-27 | 2002-01-11 | Nec Corp | Plasma display panel |
EP1174891A3 (en) | 2000-07-19 | 2004-02-25 | Fuji Photo Film Co., Ltd. | Dye sensitized photoelectrochemical cell |
US6407330B1 (en) | 2000-07-21 | 2002-06-18 | North Carolina State University | Solar cells incorporating light harvesting arrays |
US6420648B1 (en) | 2000-07-21 | 2002-07-16 | North Carolina State University | Light harvesting arrays |
JP2002050413A (en) * | 2000-08-03 | 2002-02-15 | Japan Gore Tex Inc | Light electrode, and solar cell using the same |
JP4461656B2 (en) * | 2000-12-07 | 2010-05-12 | セイコーエプソン株式会社 | Photoelectric conversion element |
JP4850338B2 (en) * | 2000-12-12 | 2012-01-11 | リンテック株式会社 | Semiconductor electrode manufacturing method and photochemical battery |
JP2002184477A (en) | 2000-12-14 | 2002-06-28 | Fuji Xerox Co Ltd | Optical semiconductor electrode, its method of manufacture, and photoelectric conversion element using the same |
JP2002298936A (en) * | 2001-03-30 | 2002-10-11 | Fuji Xerox Co Ltd | Photoelectric conversion element and its manufacturing method |
JP2002314108A (en) * | 2001-04-13 | 2002-10-25 | Seiko Epson Corp | Solar cell |
US6798464B2 (en) | 2001-05-11 | 2004-09-28 | International Business Machines Corporation | Liquid crystal display |
JP2003123855A (en) | 2001-10-17 | 2003-04-25 | Fujikura Ltd | Electrode for photoelectric conversion element |
JP2003174178A (en) * | 2001-12-05 | 2003-06-20 | Shirouma Science Co Ltd | Wire mesh embedded solar battery panel |
NL1020744C2 (en) * | 2002-06-04 | 2003-12-08 | Stichting Energie | Liquid-containing photovoltaic element. |
US6852920B2 (en) * | 2002-06-22 | 2005-02-08 | Nanosolar, Inc. | Nano-architected/assembled solar electricity cell |
US6946597B2 (en) * | 2002-06-22 | 2005-09-20 | Nanosular, Inc. | Photovoltaic devices fabricated by growth from porous template |
US7825330B2 (en) * | 2002-07-09 | 2010-11-02 | Fujikura Ltd. | Solar cell |
US20040201878A1 (en) * | 2002-07-25 | 2004-10-14 | Enki Technologies Llc | Electrooptic devices |
AU2003279708A1 (en) * | 2002-09-05 | 2004-03-29 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
US7368659B2 (en) * | 2002-11-26 | 2008-05-06 | General Electric Company | Electrodes mitigating effects of defects in organic electronic devices |
US7145071B2 (en) * | 2002-12-11 | 2006-12-05 | General Electric Company | Dye sensitized solar cell having finger electrodes |
US7179988B2 (en) * | 2002-12-11 | 2007-02-20 | General Electric Company | Dye sensitized solar cells having foil electrodes |
WO2004086462A2 (en) * | 2003-03-24 | 2004-10-07 | Konarka Technologies, Inc. | Photovoltaic cell with mesh electrode |
JP2004296669A (en) * | 2003-03-26 | 2004-10-21 | Bridgestone Corp | Dye-sensitized solar cell and electrode therefor |
US6936761B2 (en) * | 2003-03-29 | 2005-08-30 | Nanosolar, Inc. | Transparent electrode, optoelectronic apparatus and devices |
US7462774B2 (en) * | 2003-05-21 | 2008-12-09 | Nanosolar, Inc. | Photovoltaic devices fabricated from insulating nanostructured template |
US7605327B2 (en) * | 2003-05-21 | 2009-10-20 | Nanosolar, Inc. | Photovoltaic devices fabricated from nanostructured template |
WO2005083730A1 (en) * | 2004-02-19 | 2005-09-09 | Konarka Technologies, Inc. | Photovoltaic cell with spacers |
-
2003
- 2003-03-24 US US10/395,823 patent/US7022910B2/en not_active Expired - Lifetime
- 2003-11-26 US US10/723,554 patent/US20040187911A1/en not_active Abandoned
-
2004
- 2004-03-23 DE DE602004029770T patent/DE602004029770D1/en not_active Expired - Lifetime
- 2004-03-23 AT AT04758052T patent/ATE486378T1/en not_active IP Right Cessation
- 2004-03-24 EP EP04758088.1A patent/EP1606845B1/en not_active Expired - Lifetime
- 2004-03-24 WO PCT/US2004/008925 patent/WO2004086464A2/en active Application Filing
- 2004-03-24 JP JP2006507509A patent/JP5248770B2/en not_active Expired - Fee Related
- 2004-03-24 KR KR1020057017716A patent/KR101024876B1/en active IP Right Grant
-
2011
- 2011-07-15 JP JP2011156910A patent/JP5616852B2/en not_active Expired - Fee Related
- 2011-08-22 US US13/214,585 patent/US20110308604A1/en not_active Abandoned
-
2012
- 2012-12-05 JP JP2012266670A patent/JP2013093328A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5158618A (en) * | 1990-02-09 | 1992-10-27 | Biophotonics, Inc. | Photovoltaic cells for converting light energy to electric energy and photoelectric battery |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8987036B2 (en) | 2008-07-02 | 2015-03-24 | Sharp Kabushiki Kaisha | Solar battery module and solar battery array |
Also Published As
Publication number | Publication date |
---|---|
EP1606845A2 (en) | 2005-12-21 |
EP1606845B1 (en) | 2015-10-14 |
JP5248770B2 (en) | 2013-07-31 |
WO2004086464A3 (en) | 2004-10-28 |
ATE486378T1 (en) | 2010-11-15 |
KR20050116152A (en) | 2005-12-09 |
EP1606845A4 (en) | 2009-05-27 |
US20040187911A1 (en) | 2004-09-30 |
JP2013093328A (en) | 2013-05-16 |
US7022910B2 (en) | 2006-04-04 |
US20030230337A1 (en) | 2003-12-18 |
KR101024876B1 (en) | 2011-03-31 |
JP2006523369A (en) | 2006-10-12 |
JP2011205149A (en) | 2011-10-13 |
JP5616852B2 (en) | 2014-10-29 |
WO2004086464A2 (en) | 2004-10-07 |
DE602004029770D1 (en) | 2010-12-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20110308604A1 (en) | Photovoltaic cell with mesh electrode | |
EP1606846B1 (en) | Photovoltaic cell with mesh electrode | |
US7749794B2 (en) | Method of preparing electrode | |
EP1902476B1 (en) | Method of transferring photovoltaic cells | |
US20070108539A1 (en) | Stable organic devices | |
US20070044834A1 (en) | CIGS photovoltaic cells | |
CA2346294C (en) | Solid-state photoelectric device | |
KR101557587B1 (en) | Organic solar cell and manufacturing the same | |
US20070084506A1 (en) | Diffraction foils | |
US20100258189A1 (en) | Wrapped solar cel |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: KONARKA TECHNOLOGIES, INC., MASSACHUSETTS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:GAUDIANA, RUSSELL;MONTELLO, ALAN;REEL/FRAME:026785/0933 Effective date: 20040519 |
|
AS | Assignment |
Owner name: TOTAL GAS & POWER USA (SAS), FRANCE Free format text: SECURITY AGREEMENT;ASSIGNOR:KONARKA TECHNOLOGIES, INC.;REEL/FRAME:027465/0192 Effective date: 20111005 |
|
AS | Assignment |
Owner name: MERCK PATENT GMBH, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MERCK KGAA;REEL/FRAME:029717/0065 Effective date: 20121120 Owner name: MERCK KGAA, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KONARKA TECHNOLOGIES, INC.;REEL/FRAME:029717/0048 Effective date: 20121102 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |