JPS6079779A - Solar cell with amorphous thin-film - Google Patents
Solar cell with amorphous thin-filmInfo
- Publication number
- JPS6079779A JPS6079779A JP58187309A JP18730983A JPS6079779A JP S6079779 A JPS6079779 A JP S6079779A JP 58187309 A JP58187309 A JP 58187309A JP 18730983 A JP18730983 A JP 18730983A JP S6079779 A JPS6079779 A JP S6079779A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- solar cell
- silicon thin
- fiber cloth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000010408 film Substances 0.000 claims abstract description 33
- 239000004744 fabric Substances 0.000 claims abstract description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 16
- 239000000835 fiber Substances 0.000 claims abstract description 12
- 229920006254 polymer film Polymers 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052710 silicon Inorganic materials 0.000 abstract description 13
- 239000010703 silicon Substances 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 229920001721 polyimide Polymers 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- 239000002759 woven fabric Substances 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 230000006378 damage Effects 0.000 abstract description 3
- 238000004804 winding Methods 0.000 abstract description 3
- 229920000728 polyester Polymers 0.000 abstract description 2
- 239000002120 nanofilm Substances 0.000 abstract 3
- 238000010030 laminating Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000004760 aramid Substances 0.000 description 5
- 229920003235 aromatic polyamide Polymers 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 230000037303 wrinkles Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229920000784 Nomex Polymers 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229920006332 epoxy adhesive Polymers 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004763 nomex Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229920000271 Kevlar® Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004761 kevlar Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- SOQBSQLGTKQSGQ-UHFFFAOYSA-N oxo(oxostannanylidene)tin Chemical compound O=[Sn]=[Sn]=O SOQBSQLGTKQSGQ-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、可撓性基板上に光起電力発生要素として非
晶質シリコンのａｍを設゛けた太陽電池に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a solar cell in which an amorphous silicon am is provided as a photovoltaic force generating element on a flexible substrate.
非晶′Ｒ薄膜を、ステンレス板、ガラス板等の非可撓性
基板に設けた太陽電池や、ポリイミドなどの樹脂１ｍの
ような可撓性基板に設けた太陽電池が知られている。な
かんずく、□後者の太陽電池は、従来の非可撓性基板上
に形成された太ｍ１１！池と違い、シート状であるので
製品形状に任意性を持たせることができ、今後の用途ｎ
発によりその応用が拡がることが期待される。また、こ
のような可撓性基板を採用するメリットは、連続生産が
できる、すなわち適度の張力をかけつつ巻出し、巻取る
、いわゆるＲｏｌｌ ｔｏ Ｒｏｌｌ方式で、製造でき
る点にもある。そのためには、基板はこの張力に耐え得
る引張り強度を有していることが必要になるが、従来の
フィルム単独使用の基板は、太ＩＩ？！池製造時あるい
は使用時に破れ、傷を受けることがあり、張力をかけた
場合その部分より破断する危惧があった。さらに、上記
Ｒｏｌｌ ｔｏ Ｒｏｌｌ方式は、Ｒｏｌｌ状に巻かれ
た基材より基板を春出し、フィルム基板に下部電極、シ
リコン薄膜を形成させた後、再びＲＯｌ、Ｉ状に轡取る
ものなので、巻上げロールではフィルム面と薄膜面とが
接触する。Solar cells in which an amorphous 'R thin film is provided on a non-flexible substrate such as a stainless steel plate or a glass plate, and solar cells in which an amorphous 'R thin film is provided on a flexible substrate such as 1 m of resin such as polyimide are known. Above all, the latter solar cell is a thick m11 formed on a conventional non-flexible substrate! Unlike ponds, it is sheet-shaped, so the product shape can be arbitrary, making it suitable for future applications.
It is hoped that this development will expand its applications. Further, the advantage of employing such a flexible substrate is that continuous production is possible, that is, it can be manufactured using a so-called roll-to-roll method, in which the substrate is unwound and wound up while applying an appropriate tension. To do this, the substrate must have a tensile strength that can withstand this tension, but conventional substrates that use only film have a thickness of 2. ! The pond could be torn or damaged during manufacture or use, and there was a risk that it would break at that part if tension was applied. Furthermore, in the above-mentioned Roll to Roll method, the substrate is spring-rolled from the roll-shaped base material, the lower electrode and the silicon thin film are formed on the film substrate, and then the film is rolled back into the ROl and I-shapes. In this case, the film surface and the thin film surface come into contact.
この場合、両面は酒りが悪くフィルム面が皺になりやす
く、せっかく形成させた太陽電池の非晶質シリコン薄膜
を損傷させる不都合が惹起する。このように、これまで
のフィルムを基板とする太陽電池では、上記Ｒｏ１１方
式以外でもフィルム自体の破損が起こりやすく、終局的
には太陽電池の変換効率が著しく低下した。In this case, both sides have poor stability and the film surface tends to wrinkle, causing the disadvantage of damaging the amorphous silicon thin film of the solar cell that has been formed. As described above, in conventional solar cells using films as substrates, even in systems other than the above-mentioned Ro11 method, the film itself is likely to be damaged, and ultimately the conversion efficiency of the solar cells is significantly reduced.
而して、この発明者等は、在来のフィルム基板太１１Ｊ
ｉｆｆｉ池に付随するデメリットを解消すべく鋭意検討
した結果、この発明を見出すに至った。Therefore, the inventors discovered that the conventional film substrate thickness 11J
As a result of intensive study to eliminate the disadvantages associated with IFFI ponds, this invention was discovered.
ブなわら、この発明は可撓性基板上に非晶質シリコン簿
膜を有する太Ｉｌｌ電池において、該基板として高分子
フィルムに１Ｍ布帛を積層せしめたものを使用する太陽
電池である。More specifically, the present invention is a solar cell in which a 1M fabric is laminated on a polymer film as the substrate in a thick type battery having an amorphous silicon film on a flexible substrate.
この発明に係る非晶質シリコン薄膜を有する太陽Ｗｉ池
とは、シリコン系の非晶質薄膜を用いて、ショットキ型
、ｐＩｎ型、またはタンデム型の素子構造を形成した太
陽電池である。なお、シリコン系の非晶質ｌ膜としては
、８１，５ｔ−Ｇｅ、Ｓ＋−Ｃ，ｓ＋ −Ｎなどの単体
または化合物からなる水素化アモルファス膜もしくはフ
ッ素化アモルファス膜が含まれる。The solar cell having an amorphous silicon thin film according to the present invention is a solar cell in which a Schottky type, pIn type, or tandem type element structure is formed using a silicon-based amorphous thin film. Note that the silicon-based amorphous l film includes a hydrogenated amorphous film or a fluorinated amorphous film made of a single substance or a compound of 81,5t-Ge, S+-C, s+-N, etc.
この発明に使用する高分子フィルムは、シリコン薄膜形
成時に熱に耐え得るものであれば格別制限を設けるもの
ではない。たとえば、ポリイミドフィルム、芳香族ポリ
アミドフィルム、ポリエーテルスルホンフィルム、ポリ
スルホンフィルムなどが挙げられる。The polymer film used in this invention is not particularly limited as long as it can withstand heat during the formation of a silicon thin film. Examples include polyimide film, aromatic polyamide film, polyethersulfone film, polysulfone film, and the like.
また、この発明でフィルムに積層する繊維布帛とは、織
布、ニット、不織布などの１１Ｍ布帛状物をいう。目付
は、１０〜４０００／Ｉ２の範囲のものである。この布
帛も耐熱性が要求され、好適な素材としては芳香族ポリ
アミド、全芳香族ポリエステルが挙げられる。Furthermore, the fiber fabric laminated on the film in this invention refers to 11M fabrics such as woven fabrics, knitted fabrics, and nonwoven fabrics. The basis weight is in the range of 10 to 4000/I2. This fabric is also required to have heat resistance, and suitable materials include aromatic polyamide and wholly aromatic polyester.
かかる高分子フィルムとｍ維布帛とは積層されて基板に
形成される。双方の積層は、たとえば、エポキシ系、シ
リコン系、ポリイミド系の耐熱性接着剤によりＳ帷布帛
がフィルムのシリコン薄膜と反対の面に位置するように
なされる。このようにして作成した基板（フィルムと繊
維布帛とを一体化したもの）上に光起電力要素としての
非晶質シリコンＷｉｌｌを、グロー放電法、蒸着法、ク
ラスターイオンビーム法などにより形成させるが、その
形成前にフィルム表面に下部電極を形成する。The polymer film and the m-fiber fabric are laminated to form a substrate. Both layers are laminated using, for example, an epoxy, silicone, or polyimide heat-resistant adhesive such that the S-cloth is located on the opposite side of the film from the silicone thin film. Amorphous silicon Will as a photovoltaic element is formed on the thus created substrate (integrated film and fiber fabric) by glow discharge method, vapor deposition method, cluster ion beam method, etc. , form a lower electrode on the film surface before its formation.
電極としては特に限定するものではなく、アルミニウム
、鉄、ステンレス鋼、ニッケル、タングステンなどをｗ
ｍ状となるように蒸着、スパッタリング、イオンブレー
ティングなどで基板上に形成させ下部電極が形成できる
。The electrodes are not particularly limited, and may be made of aluminum, iron, stainless steel, nickel, tungsten, etc.
The lower electrode can be formed by forming an m-shaped layer on the substrate by vapor deposition, sputtering, ion blasting, etc.
次に、この下部電極上に非晶質シリコン薄膜を形成する
。それには、上述したようなグロー放電法、蒸着法、ク
ラスターイオンビーム法などの公知の方法を用いる。た
とえば、グロー放電法の場合ハ、Ｏ０′１〜１０Ｔｏｒ
ｒに維持された真空層内でロールアップされた可撓性基
板（フィルムと布帛とを組合せ、下部電極を形成）から
該基板を引出し、２００〜３５０℃に加熱した基板ホル
ダーに密着させる。この基板ホルダーを一方の電極とし
、これと対向する電極との間に、たとえば、１８．５６
ＭＨｚの高周波電力を供給する。真空隔内には、シラン
ガス（８１）１４）、シボランフゴス（８２８Ｇ）、ボ
スフィンガス（ＰＨ，）、水素ガス（Ｈ２）を導入して
グロー放電を起こし、所定の薄膜になるまで原料ガスを
供給し、光起電力の要素である非晶質シリコン薄膜を形
成させる。Next, an amorphous silicon thin film is formed on this lower electrode. For this purpose, known methods such as the above-mentioned glow discharge method, vapor deposition method, cluster ion beam method, etc. are used. For example, in the case of glow discharge method, O0'1~10Tor
The flexible substrate (film and fabric combined to form the lower electrode) is rolled up in a vacuum layer maintained at r and is pulled out from the flexible substrate and brought into close contact with a substrate holder heated to 200-350°C. This substrate holder is used as one electrode, and between this and the opposite electrode, for example, 18.56
Supplies MHz high frequency power. Silane gas (81) 14), Ciborane Fugos (828G), Bosphin gas (PH, ), and hydrogen gas (H2) are introduced into the vacuum chamber to cause glow discharge, and the raw material gas is supplied until a predetermined thin film is formed. Then, an amorphous silicon thin film, which is an element of photovoltaic power, is formed.
さらに詳しくは、１型シリコンＷＩｍを作製するには、
シランガスと水素ガスを供給して製脱を行ない、またｎ
型シリコン薄膜を作製するには、シランガス、水素ガス
、ジボランガスを供給して製ＩＩＩを行なう。またｎ型
シリコン薄膜を作製Ｊるには、シランガス、水素ガス、
ホスフィンガスを供給づることで製膜する。More specifically, to fabricate type 1 silicon WIm,
Silane gas and hydrogen gas are supplied to perform decomposition, and n
In order to fabricate a silicon thin film, silane gas, hydrogen gas, and diborane gas are supplied to perform fabrication III. In addition, to prepare an n-type silicon thin film, silane gas, hydrogen gas,
Film is formed by supplying phosphine gas.
次に、この上に表面電極を形成する。これはショット・
主接合セルの場合は、ショットキ障壁金属として、白金
、金、パラジウムなどをスパッタ法、真空蒸着法、イオ
ンブレーティング法などで１００Ａ程度の薄膜で堆積さ
せる。またへゾロフェイス接合セルの場合は、酸化イン
ジウム、酸化錫、酸化錫−酸イヒインジウム膜を２００
〜５０００Ａ程度の薄膜になるようにスパッタ法、真空
蒸着法、イオンブレーティング法などで堆積させる。さ
らに、収集電極をショットキ障壁金属、ヘトロワｌイス
電極表面上に設けて非晶質シリコン薄膜を有する太陽電
池とする。Next, a surface electrode is formed on this. This is a shot
In the case of the main junction cell, platinum, gold, palladium, or the like is deposited as a Schottky barrier metal in a thin film of about 100 A by sputtering, vacuum evaporation, ion blating, or the like. In addition, in the case of hezoroface junction cells, indium oxide, tin oxide, tin oxide-tin oxide films are used at 200%
It is deposited by a sputtering method, a vacuum evaporation method, an ion blating method, etc. so that it becomes a thin film of about 5000A. Further, a collector electrode is provided on the surface of the Schottky barrier metal, Hetroweiss electrode to obtain a solar cell having an amorphous silicon thin film.
このように、この発明に関わる非晶質シリコン太陽電池
は、高分子フィルムと繊維布帛とを積層した基板、該基
板上に形成した下部電極、該電極上に設けた多層の非晶
質シリコン膜、さらにその上に表面電極、収集電極を設
けた基本構造を持っている。As described above, the amorphous silicon solar cell according to the present invention includes a substrate in which a polymer film and a fiber cloth are laminated, a lower electrode formed on the substrate, and a multilayer amorphous silicon film provided on the electrode. It has a basic structure with a surface electrode and a collection electrode on top of it.
このように、可撓性基板として高分子フィルムと繊維布
帛との積層物を用いることによるメリットは次のごとく
である。As described above, the advantages of using a laminate of a polymer film and a fiber fabric as a flexible substrate are as follows.
すなわち、ロール型状による太陽電池の連続製造が可能
であることは言うに及ばず、繊維布帛とシリコン薄膜面
との滑り性が良いため巻取り時での皺発生などのトラブ
ルも全くなく、しかも布帛がフィルム面に裏打ちされて
いるためフィルム単独使用による基板に比べて破断強度
、引張り強度が大幅に向上する。かかるメリットが相乗
的に作用して太陽電池の変換効率が著しく高められるこ
とになった。In other words, it goes without saying that it is possible to continuously manufacture solar cells in roll form, and because the fiber fabric and the silicon thin film surface have good sliding properties, there are no problems such as wrinkles during winding. Since the fabric is lined with the film surface, the breaking strength and tensile strength are significantly improved compared to a substrate using only film. These advantages work synergistically to significantly increase the conversion efficiency of solar cells.
以下この発明の実施例を記載するが、この発明はかかる
実施例によって何ら限定を受けるものではない。Examples of the present invention will be described below, but the present invention is not limited in any way by these Examples.
実施例１
厚さ５０μのポリイミドフィルムに、エポキシ系の接着
剤を付して芳香族ポリアミド織布（商品名ケブラー）を
積層し硬化させ、可撓性基板を作製した。この基板を１
０− ’ Ｔｏｒｒ真空下で１５０℃２ｈｒ乾燥した。Example 1 Aromatic polyamide woven fabric (trade name: Kevlar) was laminated onto a polyimide film having a thickness of 50 μm using an epoxy adhesive and cured to produce a flexible substrate. This board is 1
It was dried at 150°C for 2 hours under a 0-' Torr vacuum.
乾燥した基材をスパッタリング装置に挿入し、タングス
テンをターゲラ１−として厚さ１．５μのタングステン
簿膜を下部電極として形成させた。しかる後、この下部
電極を形成させた基板をグロー放電装置のアノード側の
電極上に緊張下で導入し、８Ｘ１０− ’−ｒｏｒｒに
排気しながら３００℃に該基板を加熱し、引続き窒素ガ
ス（Ｎ２）を５００ ｃｃ／１ｎで導入し、１．０ＴＯ
「「の窒素ガス雰囲気で２００Ｗの高周波電力を印加し
基板のイオンボンバードを２０分行ない、基板をクリー
ニングする。次に、水素ガスで希釈した１０％のシラン
ガスと水素ガスで０．１％に希釈したホスフィンガスを
グロー放電装置内に導入し、０．６Ｔｏｒｒの該ガス雰
囲気で１００Ｗの高周波電力を印加し、２００Ａのｎ型
の非晶質シリコンＷＩｍを形成させる。次に、水素ガス
とシランガスで前記と同様にして、ｎ型のシリコンＷＩ
膜上に１型の非晶質薄膜を３０００Ａの厚みで形成させ
る。次に、水素ガスで１０％に希釈したシランガスど水
素ガスで０．１％に希釈したジボランガスをグロー放電
装置内に導入し、ｉ型シリコン薄躾上に３００Ａのｐ型
非晶質シリコンＷＪ賎を形成させ、高分子フィルムに繊
維布帛を積層させた基板上にｐｌｎ型の非晶質シリコン
薄膜を設ける。The dried base material was inserted into a sputtering device, and a tungsten film having a thickness of 1.5 μm was formed as a lower electrode using tungsten as a target layer. Thereafter, the substrate on which the lower electrode was formed was introduced under tension onto the anode side electrode of a glow discharge device, and the substrate was heated to 300° C. while being evacuated to 8×10-'-rorr, and then nitrogen gas ( N2) was introduced at 500 cc/1n, and 1.0TO
200W of high frequency power is applied in a nitrogen gas atmosphere to ion bombard the substrate for 20 minutes to clean the substrate.Next, 10% silane gas diluted with hydrogen gas and diluted to 0.1% with hydrogen gas. The phosphine gas thus prepared is introduced into a glow discharge device, and a high frequency power of 100 W is applied in the gas atmosphere of 0.6 Torr to form a 200 A n-type amorphous silicon WIm. Next, hydrogen gas and silane gas In the same manner as above, n-type silicon WI
A type 1 amorphous thin film with a thickness of 3000A is formed on the film. Next, silane gas diluted to 10% with hydrogen gas and diborane gas diluted to 0.1% with hydrogen gas were introduced into the glow discharge device, and a 300A p-type amorphous silicon WJ was placed on the i-type silicon thin film. A PLN type amorphous silicon thin film is provided on a substrate in which a fiber fabric is laminated on a polymer film.
このようにして得たｐｉｎ型非晶質シリコン薄躾をスパ
ッタ装設に装着し、酸化錫−酸化インジウム＠躾を゛１
０００Ａ堆積し、ヘテロフェイス層とした。最終的に、
このヘテロフェイス層上に収集電極としてパラジウムを
１０００Ａ＜ｉ型に堆積させ、可撓性基板上にｐｌｎ型
へテロフェイス型太陽電池デバイスを得た。上記のデバ
イスは、Ｒｏｌｌｔｏ Ｒｏ１１方式で形成した。得ら
れたデバイスの初期特性を、ＡＭ−１に調整したオリニ
ル社製ソーラシ１ミレータで測定した。その結果を第１
表に示す。また、デバイス作製段階では巻取り時シリコ
ン面に皺は発生せず、また基板の破損、破壊は全く認め
られなかった。The pin-type amorphous silicon thin film obtained in this way was attached to a sputtering equipment, and the tin oxide-indium oxide @ film was attached to the sputtering equipment.
000A was deposited to form a heteroface layer. Finally,
On this heteroface layer, palladium was deposited as a collector electrode in a 1000A<i type to obtain a pln type heteroface solar cell device on a flexible substrate. The above device was formed using a Roll to Ro11 method. The initial characteristics of the obtained device were measured using a Solari 1 Millator manufactured by Orinil Co., Ltd. adjusted to AM-1. The result is the first
Shown in the table. Further, during the device fabrication stage, no wrinkles were generated on the silicon surface during winding, and no damage or destruction of the substrate was observed.
実施例２
厚さ５０μのポリエーテルスルホンフィルムにエポキシ
系接着剤を介し゛Ｃ芳香族ポリアミドｓｌｅｗ織布（商
品名ノーメックス）を積層し、硬化させて可撓性基板を
形成した。該基板を用い、ｐｌｎ Ｉｊｌへテロフェイ
ス太陽電池を実施例１と同様な方法で作製した。得られ
た太陽電池デバイスの初ｖＡ特性を第１表に示す。Example 2 Aromatic polyamide slew woven fabric (trade name: Nomex) was laminated on a polyether sulfone film with a thickness of 50 μm via an epoxy adhesive and cured to form a flexible substrate. Using this substrate, a pln Ijl heteroface solar cell was fabricated in the same manner as in Example 1. Table 1 shows the initial vA characteristics of the obtained solar cell device.
実施例３
厚さ５０μのボリアリレート樹脂フィルムにシリコン系
接着剤を介して芳香族ポリアミド楳Ｍ織布（商品名ノー
メックス）を８４層し、硬化させ又可撓性基板を形成し
た。該基板を用い、ｐｌｎ型へテロフェイス太陽電池を
実施例１と同様な方法で作製した。得られたデバイスの
特性を第１表に示す。Example 3 84 layers of aromatic polyamide woven M fabric (trade name Nomex) were coated on a polyarylate resin film with a thickness of 50 μm via a silicone adhesive, and then cured to form a flexible substrate. Using this substrate, a PLN type heteroface solar cell was produced in the same manner as in Example 1. Table 1 shows the characteristics of the obtained device.
Claims (1)
おいて、″咳基板とし□て高分子フィルムにＩｌｉ維布
帛を積層せしめたものを使用することを特徴とする非晶
質Ｉ膜を有する太陽電池。A solar cell having an amorphous silicon thin film on a flexible substrate, which has an amorphous I film characterized by using a polymer film laminated with an Ili fiber fabric as the substrate. solar cells.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58187309A JPS6079779A (en) | 1983-10-05 | 1983-10-05 | Solar cell with amorphous thin-film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58187309A JPS6079779A (en) | 1983-10-05 | 1983-10-05 | Solar cell with amorphous thin-film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6079779A true JPS6079779A (en) | 1985-05-07 |
| JPH0550151B2 JPH0550151B2 (en) | 1993-07-28 |
Family
ID=16203740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58187309A Granted JPS6079779A (en) | 1983-10-05 | 1983-10-05 | Solar cell with amorphous thin-film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6079779A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0299010U (en) * | 1989-01-27 | 1990-08-07 | ||
| WO2004086464A3 (en) * | 2003-03-24 | 2004-10-28 | Konarka Technologies Inc | Photovoltaic cells utilizing mesh electrodes |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57166082A (en) * | 1981-03-17 | 1982-10-13 | Messerschmitt Boelkow Blohm | Solar battery supporting membrane |
-
1983
- 1983-10-05 JP JP58187309A patent/JPS6079779A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57166082A (en) * | 1981-03-17 | 1982-10-13 | Messerschmitt Boelkow Blohm | Solar battery supporting membrane |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0299010U (en) * | 1989-01-27 | 1990-08-07 | ||
| US7022910B2 (en) * | 2002-03-29 | 2006-04-04 | Konarka Technologies, Inc. | Photovoltaic cells utilizing mesh electrodes |
| WO2004086464A3 (en) * | 2003-03-24 | 2004-10-28 | Konarka Technologies Inc | Photovoltaic cells utilizing mesh electrodes |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0550151B2 (en) | 1993-07-28 |
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