US20110245084A1 - Method for manufacturing precursor, method for manufacturing superconducting wire, precursor, and superconducting wire - Google Patents
Method for manufacturing precursor, method for manufacturing superconducting wire, precursor, and superconducting wire Download PDFInfo
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- US20110245084A1 US20110245084A1 US13/131,350 US200913131350A US2011245084A1 US 20110245084 A1 US20110245084 A1 US 20110245084A1 US 200913131350 A US200913131350 A US 200913131350A US 2011245084 A1 US2011245084 A1 US 2011245084A1
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 239000002243 precursor Substances 0.000 title claims description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 171
- 239000002184 metal Substances 0.000 claims abstract description 171
- 229910000990 Ni alloy Inorganic materials 0.000 claims abstract description 62
- 238000010438 heat treatment Methods 0.000 claims abstract description 32
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 105
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 239000000758 substrate Substances 0.000 description 19
- 239000010949 copper Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
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- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
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- 229910018481 Ni—Cu Inorganic materials 0.000 description 4
- 229910000420 cerium oxide Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000004549 pulsed laser deposition Methods 0.000 description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
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- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
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- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
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- 238000007747 plating Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910021523 barium zirconate Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
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- 239000010436 fluorite Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- OWCYYNSBGXMRQN-UHFFFAOYSA-N holmium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ho+3].[Ho+3] OWCYYNSBGXMRQN-UHFFFAOYSA-N 0.000 description 1
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- 150000002602 lanthanoids Chemical class 0.000 description 1
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- 239000001301 oxygen Substances 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
- H01B12/02—Superconductive or hyperconductive conductors, cables, or transmission lines characterised by their form
- H01B12/06—Films or wires on bases or cores
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12944—Ni-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Definitions
- the present method relates to a method for manufacturing a precursor, a method for manufacturing a superconducting wire, a precursor and a superconducting wire.
- a superconducting wire having a substrate, an intermediate layer formed on the substrate, and a superconducting layer formed on the intermediate layer is used.
- a substrate of such a superconducting wire for example, Japanese Patent Laying-Open No. 2006-127847 (Patent Document 1), Japanese National Patent Publication No. 11-504612 (Patent Document 2) and the like are used.
- Patent Document 1 discloses an orientation substrate for film formation including a non-orientated nonmagnetic first metal layer, and a second metal layer having a superficial layer with an oriented texture wherein the first metal layer has higher strength than the second metal layer.
- Patent Document 2 discloses a metal substrate having an alloyed biaxial orientation texture.
- the first metal layer of Patent Document 1 is Ni
- oxidation of the first metal layer is prevented. Therefore, an intermediate layer can be formed on the Ni layer, and hence a superconducting wire can be formed.
- Ni is a ferromagnetic metal
- the magnetic field toward the end in the widthwise direction of the superconducting wire concentrates due to the hysteresis loss of Ni. This leads a problem that the hysteresis loss of the superconducting wire increases.
- the present invention has been made to solve the aforementioned problems, and it is an object of the present invention to provide a method for manufacturing a precursor, a method for manufacturing a superconducting wire, a precursor and a superconducting wire capable of reducing the hysteresis loss.
- the method for manufacturing a precursor of the present invention includes the following steps.
- a laminate metal having a first metal layer and a Ni layer formed on the first metal layer is prepared.
- An intermediate layer is formed on the Ni layer of the laminate metal.
- a nonmagnetic Ni alloy layer is formed from the laminate metal.
- the precursor of the present invention includes a nonmagnetic Ni alloy layer, and an intermediate layer formed on the nonmagnetic Ni alloy layer.
- the concentration of Ni monotonically reduces from an interface with the intermediate layer toward the surface opposite to the interface.
- the intermediate layer is formed on the Ni layer.
- Ni is hard to be oxidized, and shows excellent matching of lattice with the intermediate layer. Therefore, the intermediate layer can be easily formed on the Ni layer.
- the laminate metal By subjecting the laminate metal to a heat treatment in this condition, Ni constituting the Ni layer and the first metal constituting the first metal layer are alloyed, so that a Ni alloy can be formed.
- the magnetism of the Ni alloy can be made smaller than that of a simple substance of Ni. In other words, it is possible to form a nonmagnetic Ni alloy layer from the laminate metal.
- the nonmagnetic Ni alloy layer is formed from the laminate metal by subjecting the laminate metal to a heat treatment after the step of forming an intermediate layer. Therefore, the concentration of Ni monotonically reduces from an interface with the intermediate layer to the surface opposite to the interface in the nonmagnetic Ni alloy layer because of diffusion of Ni in the laminate metal.
- a laminate metal in which a second metal layer having higher strength than the first metal layer is formed under the first metal layer is prepared in the step of preparing a laminate metal.
- the aforementioned precursor further includes a second metal layer formed under the nonmagnetic Ni alloy layer and having higher strength than the nonmagnetic Ni alloy layer.
- the second metal layer has higher strength than the first metal layer, it is possible to improve the strength of the precursor compared to the case of the first metal layer alone.
- the Ni layer has a thickness of 1 ⁇ m or more and 10 ⁇ m or less in the step of preparing a laminate metal.
- Ni constituting the Ni layer easily diffuses to the first metal layer in the step of forming a nonmagnetic Ni diffused layer, so that it is possible to prevent Ni from remaining as a simple substance of Ni effectively.
- the method for manufacturing a superconducting wire of the present invention includes the following steps.
- a laminate metal having a first metal layer, and a Ni layer formed on the first metal layer is prepared.
- An intermediate layer is formed on the Ni layer of the laminate metal.
- a superconducting layer is formed on the intermediate layer.
- a nonmagnetic Ni alloy layer is formed from the laminate metal by subjecting the laminate metal to a heat treatment after at least either one of the step of forming an intermediate layer, and the step of forming a superconducting layer.
- the superconducting wire of the present invention includes the aforementioned precursor, and a superconducting layer formed on an intermediate layer.
- the intermediate layer is formed on the Ni layer.
- Ni is hard to be oxidized, and shows excellent matching of lattice with the intermediate layer. Therefore, it is possible to easily form the intermediate layer on the Ni layer.
- Ni constituting the Ni layer and the first metal constituting the first metal layer are alloyed, so that a Ni alloy can be formed.
- the magnetism of the Ni alloy can be made smaller than that of a simple substance of Ni. In other words, it is possible to form a nonmagnetic Ni alloy layer from the laminate metal.
- a laminate metal in which a second metal layer having higher strength than the first metal layer is formed under the first metal layer is prepared in the step of preparing a laminate metal.
- the second metal layer has higher strength than the first metal layer, it is possible to improve the strength of the superconducting wire compared to the case of the first metal layer alone.
- the Ni layer has a thickness of 1 ⁇ m or more and 10 ⁇ m or less in the step of preparing a laminate metal.
- Ni constituting the Ni layer easily diffuses to the first metal layer in the step of forming a nonmagnetic Ni diffused layer, so that it is possible to prevent Ni from remaining as a simple substance of Ni effectively.
- the method for manufacturing a precursor As described above, according to the method for manufacturing a precursor, the method for manufacturing a superconducting wire, the precursor and the superconducting wire of the present invention, it is possible to reduce the hysteresis loss.
- FIG. 1 is a sectional view schematically showing a precursor in Embodiment 1 of the present invention.
- FIG. 2 is a flowchart showing a method for manufacturing a precursor in Embodiment 1 of the present invention.
- FIG. 3 is a sectional view schematically showing a laminate substrate in Embodiment 1 of the present invention.
- FIG. 4 is a sectional view schematically showing the state where an intermediate layer is formed on a laminate metal in Embodiment 1 of the present invention.
- FIG. 5 is a sectional view schematically showing a superconducting wire in Embodiment 2 of the present invention.
- FIG. 6 is a flowchart showing a method for manufacturing a superconducting wire in Embodiment 2 of the present invention.
- FIG. 7 is a flowchart showing a method for manufacturing a superconducting wire in Embodiment 3 of the present invention.
- FIG. 8 is a sectional view schematically showing the state where a superconducting layer is formed in Embodiment 3 of the present invention.
- FIG. 1 is a sectional view schematically showing a precursor in one embodiment of the present invention.
- the precursor has a substrate 10 including a second metal layer 11 and a nonmagnetic Ni alloy layer 12 formed on second metal layer 11 , and an intermediate layer 20 formed on nonmagnetic Ni alloy layer 12 .
- Substrate 10 has a shape of long tape.
- Substrate 10 includes second metal layer 11 and nonmagnetic Ni alloy layer 12 .
- Nonmagnetic Ni alloy layer 12 is a nonmagnetic metal.
- the Ni alloy constituting nonmagnetic Ni alloy layer 12 is not particularly limited, however, it is preferably a Cu (copper)-Ni alloy and an Ag (silver)-Ni alloy.
- the nonmagnetic Ni alloy layer is oriented.
- Nonmagnetic Ni alloy layer 12 has lower magnetism than a simple substance of Ni. In other words, both the case where the magnetism is 0 J/m 3 , and the case where the magnetism has such low magnetism exceeding 0 J/m 3 and the magnetism of a simple substance of Ni or lower are included.
- nonmagnetic Ni alloy layer 12 there is a Ni concentration distribution.
- the concentration of Ni monotonically reduces from an interface with intermediate layer 20 toward the surface opposite to the interface.
- the monotonic reduction means that the Ni concentration is constant or reduces from the interface with intermediate layer 20 toward the surface opposite to the interface, and the Ni concentration is lower in the surface opposite to the interface than in the interface with intermediate layer 20 . That is, the monotonic reduction excludes the part where the Ni concentration increases toward this direction.
- Second metal layer 11 is formed under nonmagnetic Ni alloy layer 12 and has higher mechanical strength than nonmagnetic Ni alloy layer 12 .
- second metal layer 11 has such a strength that it will not elongate under tension at high temperature during formation of a superconducting layer.
- stainless is preferably used.
- Second metal layer 11 may be omitted.
- Intermediate layer 20 is a layer provided for formation of a superconducting layer on its surface.
- Intermediate layer 20 is made up of one layer or two or more layers.
- the individual layers constituting intermediate layer 20 may be constituted by different materials.
- Intermediate layer 20 may be an oxide having at least one crystal structure selected from rock-salt type, fluorite type, perovskite type, and pyrochlore type.
- Examples of a material having such a crystal structure include rare earth element oxides such as cerium oxide (CeO 2 ), holmium oxide (Ho 2 O 3 ), yttrium oxide (Y 2 O 3 ) and ytterbium oxide (Yb 2 O 3 ), yttria-stabilized zirconia (YSZ), magnesium oxide (MgO) and Ln-M-O compounds (Ln represents one or more lanthanoid elements, M represents one or more elements selected from Sr, Zr and Ga, and O represents oxygen) such as strontium titanate (SrTiO 3 ), BZO (BaZrO 3 ) and aluminum oxide (Al 2 O 3 ).
- rare earth element oxides such as cerium oxide (CeO 2 ), holmium oxide (Ho 2 O 3 ), yttrium oxide (Y 2 O 3 ) and ytterbium oxide (Yb 2 O 3 ), yttria-stabilized zirconia (YSZ), magnesium
- intermediate layer 20 preferably has excellent crystal orientation. Further, intermediate layer 20 is preferably a material capable of preventing a reaction with an element constituting the superconducting layer and diffusion. Examples of such a material include CeO 2 . The material constituting intermediate layer 20 is not particularly limited to the above material.
- FIG. 2 is a flowchart showing a method for manufacturing a precursor in the present embodiment. Next, with reference to FIG. 2 , the method for manufacturing a precursor in the present embodiment will be described.
- FIG. 3 is a sectional view schematically showing a laminate substrate in the present embodiment.
- a laminate metal having a first metal layer 13 , and a Ni layer 14 formed on first metal layer 13 is prepared (Step S 10 ).
- a laminate metal including a second metal layer 11 having higher strength than first metal layer 13 formed under first metal layer 13 is prepared.
- Second metal layer 11 is a layer for imparting strength.
- second layer 11 for example, the materials as described above may be used.
- the thickness of second metal layer 11 is, for example, 100 ⁇ m.
- First metal layer 13 is formed on second metal layer 11 (Step S 12 ).
- First metal layer 13 is preferably a metal having excellent orientation such as Cu or Ag. Also first metal layer 13 is preferably oriented. The thickness of first metal layer 13 is, for example, 18 ⁇ m.
- a method for forming first metal layer 13 is not particularly limited, and for example, a method for bonding first metal layer 13 and second metal layer 11 may be employed.
- Ni layer 14 is formed on first metal layer 13 (Step S 13 ).
- Ni layer 14 is a layer for preventing oxidation during formation of the intermediate layer.
- Ni layer 14 formed thereon is also oriented.
- the thickness of Ni layer 14 is, for example, 1 ⁇ m.
- a method for forming Ni layer 14 is not particularly limited, and for example, a plating method may be employed.
- the thickness of Ni layer 14 is preferably 1 ⁇ m or more and 10 ⁇ m or less. When it is 1 ⁇ m or more, it is possible to prevent Ni from diffusing even when heat of about 600° C. is added in Step S 20 for forming intermediate layer 20 as will be described later. Therefore, the function of Ni layer 14 that it is hard to be oxidized and shows excellent matching of lattice with the intermediate layer can be effectively exerted. When it is 10 ⁇ m or less, since Ni constituting Ni layer 14 easily diffuses to first metal layer 13 in Step S 30 of forming nonmagnetic Ni alloy layer 12 as will be described later, it is possible to effectively prevent Ni from remaining as a simple substance of Ni.
- Step S 11 to S 13 the laminate metal shown in FIG. 3 can be prepared (Step S 10 ).
- FIG. 4 is a sectional view schematically showing the state where an intermediate layer is formed on a laminate metal in the present embodiment.
- intermediate layer 20 is formed on Ni layer 14 of the laminate metal (Step S 20 ). Since Ni layer 14 is hard to be oxidized, it is possible to easily form intermediate layer 20 .
- Ni layer 14 formed thereon is oriented, and thus intermediate layer 20 formed on Ni layer 14 is also oriented. Therefore, it is possible to form intermediate layer 20 having excellent orientation.
- a method for forming intermediate layer 20 is not particularly limited, and for example, a sputtering method may be employed. Also, intermediate layer 20 , for example, of the material as described above is formed.
- nonmagnetic Ni alloy layer 12 is formed from the laminate metal by subjecting the laminate metal to a heat treatment (Step S 30 ).
- Step S 30 Ni of Ni layer 14 is allowed to diffuse in first metal layer 13 to make an alloy of Ni and the first metal, to form nonmagnetic Ni alloy layer 12 .
- the first metal constituting first metal layer 13 is Cu or Ag
- nonmagnetic Ni alloy layer 12 is a Ni—Cu alloy or a Ni—Ag alloy.
- a condition for the heat treatment is not particularly limited as far as Ni constituting Ni layer 14 and the first metal constituting first metal layer 13 are alloyed in the laminate metal.
- a treatment is executed for about 1 hour at a temperature of 600° C. or higher and 800° C. or lower in an atmosphere containing Ar (argon) under a pressure of 10 Pa or less.
- first metal layer 13 is Cu
- a nonmagnetic Ni—Cu alloy layer containing Ni constituting Ni layer 14 of 50% or less with respect to Cu constituting first metal layer 13 can be formed in alloying by the heat treatment.
- the precursor to be manufactured also includes the case where part of first metal layer 13 is not alloyed by the heat treatment in Step S 30 .
- the precursor of the present invention may have second metal layer 11 , first metal layer 13 formed on second metal layer 11 , nonmagnetic Ni alloy layer 12 formed on first metal layer 13 , and intermediate layer 20 formed on nonmagnetic Ni alloy layer 12 .
- nonmagnetic Ni alloy layer 12 is formed from the laminate metal by subjecting the laminate metal to the heat treatment after Step S 20 of forming intermediate layer 20 (Step S 30 ).
- Ni is hard to be oxidized, and shows excellent matching of lattice with intermediate layer 20 . Therefore, it is possible to easily form intermediate layer 20 on Ni layer 14 .
- Ni constituting Ni layer 14 and the first metal constituting first metal layer 13 are alloyed, so that a Ni alloy can be formed.
- the magnetism of the Ni alloy can be made smaller than that of a simple substance of Ni. In other words, it is possible to form nonmagnetic Ni alloy layer 12 from the laminate metal.
- intermediate layer 20 it is possible to prevent the superficial layer of Ni layer 14 from being oxidized during formation of intermediate layer 20 . Therefore, it is possible to prevent deterioration of the orientation of the intermediate layer formed on the superficial layer where oxidation is prevented.
- first metal layer 13 has excellent orientation
- the orientation of intermediate layer 20 formed thereon is also excellent. Therefore, it is possible to form intermediate layer 20 and the superconducting layer having excellent crystallinity. Therefore, by manufacturing a superconducting wire using this precursor, deterioration of the superconducting characteristics can be prevented.
- FIG. 5 is a sectional view schematically showing a superconducting wire in the present embodiment.
- the superconducting wire in the present embodiment will be described.
- the superconducting wire in the present embodiment has the precursor in Embodiment 1, and a superconducting layer 30 formed on intermediate layer 20 of the precursor. That is, the superconducting wire has second metal layer 11 , nonmagnetic Ni alloy layer 12 formed on second metal layer 11 , intermediate layer 20 formed on nonmagnetic Ni alloy layer 12 , and superconducting layer 30 formed on intermediate layer 20 .
- Superconducting layer 30 has a shape of long tape.
- Superconducting layer 30 is a superconductor represented by REBa 2 Cu 3 O y (y is 6 to 8, more preferably about 7, and RE means a rare earth element such as Y (yttrium), or Gd (gadolinium), Sm (samarium), Ho (holmium) or the like) or the like, and preferably includes GdBCO, for example.
- GdBCO is represented as GdBa 2 Cu 3 O y (y is 6 to 8, and more preferably about 7).
- the superconducting wire may further have a stabilization layer (not illustrated) formed on superconducting layer 30 .
- the stabilization layer is a contact part with an external electrode, while it protects superconducting layer 30 .
- a material for the stabilization layer is not particularly limited, however, for example, Ag (silver), Cu (copper) or the like may be used.
- FIG. 6 is a flowchart showing a method for manufacturing a superconducting wire in the present embodiment. Next, with reference to FIG. 6 , the method for manufacturing a superconducting wire in the present embodiment will be described.
- the precursor shown in FIG. 1 is manufactured similarly to Embodiment 1 (Steps S 10 to S 30 ).
- superconducting layer 30 is formed on intermediate layer 20 (Step S 40 ).
- a method for forming superconducting layer 30 is not particularly limited, and for example, the PLD (Pulsed Laser Deposition) method, the MOD (Metal Organic Deposition) method and the like can be employed. Also, superconducting layer 30 of, for example, the material as described above is formed.
- the stabilization layer (not illustrated) of the material as described above may be formed. This step may be omitted.
- Steps S 10 to S 40 it is possible to manufacture the superconducting wire shown in FIG. 5 .
- nonmagnetic Ni alloy layer 12 is formed from the laminate metal by subjecting the laminate metal to a heat treatment after Step S 20 of forming an intermediate layer (Step S 30 ).
- Step S 30 it is possible to easily form intermediate layer 20 on Ni layer 14 .
- Step S 40 it is possible to form superconducting layer 30 easily. Therefore, it is possible to lessen the concentration of the magnetic field toward the end in the widthwise direction of the superconducting wire by nonmagnetic Ni alloy layer 12 . Therefore, a superconducting wire capable of reducing the hysteresis loss can be realized.
- the superconducting wire in the present embodiment is similar to the superconducting wire in Embodiment 2 shown in FIG. 5 , the description thereof will not be repeated.
- FIG. 7 is a flowchart showing a method for manufacturing a superconducting wire in the present embodiment. Next, referring to FIG. 7 , the method for manufacturing a superconducting wire in the present embodiment will be described.
- Step S 10 a laminate metal having first metal layer 13 , and Ni layer 14 formed on first metal layer 13 is prepared.
- intermediate layer 20 is formed on Ni layer 14 of the laminate metal (Step S 20 ). Since Steps S 10 and S 20 are similar to those in Embodiment 1, the description thereof will not be repeated.
- FIG. 8 is a sectional view schematically showing the state where a superconducting layer in the present embodiment is formed. As shown in FIG. 7 and FIG. 8 , next, superconducting layer 30 is formed on intermediate layer 20 (Step S 40 ). Since Step S 40 is similar to that in Embodiment 2, the description thereof will not be repeated.
- nonmagnetic Ni alloy layer 12 is formed from the laminate metal by subjecting the laminate metal to a heat treatment after Step S 40 of forming superconducting layer 30 (Step S 30 ). Since Step S 30 is similar to that in Embodiment 1, the description thereof will not be repeated.
- Steps S 10 to S 50 the superconducting wire shown in FIG. 5 can be manufactured.
- the laminate metal may be subjected to a heat treatment after forming intermediate layer 20 .
- Step S 30 of conducting a heat treatment may be executed after Step S 20 of forming intermediate layer 20 and Step S 40 of forming superconducting layer 30 .
- nonmagnetic Ni alloy layer 12 is formed from the laminate metal by subjecting the laminate metal to a heat treatment after Step S 40 of forming the superconducting layer (Step S 30 ).
- Step S 30 it is possible to form intermediate layer 20 on Ni layer 14 . Therefore, it is possible to easily form superconducting layer 30 on intermediate layer 20 .
- Step S 40 it is possible to form nonmagnetic Ni alloy layer 12 . Therefore, it is possible to lessen the concentration of the magnetic field toward the end in the widthwise direction of the superconducting wire by nonmagnetic Ni alloy layer 12 . Therefore, a superconducting wire capable of reducing the hysteresis loss can be realized.
- the effect of having the step of forming a nonmagnetic Ni alloy layer from a laminate metal by subjecting the laminate metal to a heat treatment after at least either one of the step of forming an intermediate layer and the step of forming a superconducting layer was examined.
- the superconducting wire of Inventive Example 1 was manufactured according to Embodiment 2. Concretely, first, as first metal layer 13 , a Cu substrate having a thickness of 18 ⁇ m was prepared (Step S 12 ). Ni layer 14 having a thickness of 1 ⁇ m was formed on first metal layer 13 by plating (Step S 13 ). As a result, a laminate metal wherein the Cu substrate which is first metal layer 13 and Ni layer 14 were laminated was formed.
- Step S 20 CeO 2 was formed on Ni layer 14 as intermediate layer 20 by sputtering.
- the laminate substrate was subjected to a heat treatment under a pressure of 10 Pa or less, at a temperature of 700° C. in an atmosphere containing Ar (Step S 30 ). In this manner, a nonmagnetic Ni—Cu alloy layer was formed from the laminate metal.
- GdBCO was formed as superconducting layer 30 on intermediate layer 20 by the PLD method (Step S 40 ).
- Steps S 10 to S 40 a superconducting wire in which the Ni concentration monotonically reduces from an interface with the intermediate layer toward the surface opposite to the interface in the nonmagnetic Ni alloy layer of Inventive Example 1 was manufactured.
- the method for manufacturing a superconducting wire of Inventive Example 2 was basically similar to the method for manufacturing a superconducting wire of Inventive Example 1, but was different in that it was manufactured according to the method for manufacturing a superconducting wire in Embodiment 3. In other words, the method for manufacturing a superconducting wire of Inventive Example 2 was different from Inventive Example 1 in that Step S 30 of conducting a heat treatment was executed after Step S 40 of forming superconducting layer 30 .
- the method for manufacturing a superconducting wire of Comparative Example 1 was basically similar to the method for manufacturing a superconducting wire of Inventive Example 1, but was different in that Step S 30 of conducting a heat treatment was not executed.
- the critical current Ic of each of the superconducting wires of Inventive Examples 1, 2 and Comparative Example 1 was measured at a temperature of 77K in a self-magnetic field. An electric current when an electric field of 10 ⁇ 6 V/cm occurs was determined as the critical current Ic.
- VSM vibrating sample magnetometer
- the critical currents Ic of the superconducting wires of Inventive Examples 1 and 2 were 250 A/cm that was equivalent to the critical current Ic of the superconducting wire of Comparative Example 1. Accordingly, it was confirmed that the superconducting characteristics of the superconducting layer will not be impaired even when the heat treatment is conducted after at least either one of Step S 20 of forming an intermediate layer and Step S 40 of forming a superconducting layer.
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JP2008304153A JP5474339B2 (ja) | 2008-11-28 | 2008-11-28 | 超電導線材の前駆体の製造方法、超電導線材の製造方法 |
PCT/JP2009/069528 WO2010061757A1 (ja) | 2008-11-28 | 2009-11-18 | 前駆体の製造方法、超電導線材の製造方法、前駆体および超電導線材 |
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US14/091,460 Active US8865627B2 (en) | 2008-11-28 | 2013-11-27 | Method for manufacturing precursor, method for manufacturing superconducting wire, precursor, and superconducting wire |
US14/451,812 Active 2030-05-06 US9570215B2 (en) | 2008-11-28 | 2014-08-05 | Method for manufacturing precursor, method for manufacturing superconducting wire, precursor, and superconducting wire |
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EP (1) | EP2372722B1 (ko) |
JP (1) | JP5474339B2 (ko) |
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CN111969102B (zh) * | 2020-09-11 | 2023-10-27 | 中国科学院紫金山天文台 | 一种改善超导钛-铌薄膜接触电极的制备方法 |
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2009
- 2009-11-18 US US13/131,350 patent/US20110245084A1/en not_active Abandoned
- 2009-11-18 RU RU2011126343/07A patent/RU2011126343A/ru not_active Application Discontinuation
- 2009-11-18 EP EP09829005.9A patent/EP2372722B1/en active Active
- 2009-11-18 KR KR1020117014873A patent/KR101612149B1/ko active IP Right Grant
- 2009-11-18 CN CN201310741439.5A patent/CN103824647B/zh active Active
- 2009-11-18 CN CN2009801477091A patent/CN102227783A/zh active Pending
- 2009-11-18 WO PCT/JP2009/069528 patent/WO2010061757A1/ja active Application Filing
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- 2013-11-27 US US14/091,460 patent/US8865627B2/en active Active
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Also Published As
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US20140342917A1 (en) | 2014-11-20 |
US8865627B2 (en) | 2014-10-21 |
EP2372722B1 (en) | 2016-03-16 |
WO2010061757A1 (ja) | 2010-06-03 |
US20140287928A1 (en) | 2014-09-25 |
CN103824647A (zh) | 2014-05-28 |
EP2372722A4 (en) | 2013-02-27 |
CN103824647B (zh) | 2019-07-12 |
KR20110091789A (ko) | 2011-08-12 |
CN102227783A (zh) | 2011-10-26 |
US9570215B2 (en) | 2017-02-14 |
EP2372722A1 (en) | 2011-10-05 |
RU2011126343A (ru) | 2013-01-10 |
JP2010129432A (ja) | 2010-06-10 |
JP5474339B2 (ja) | 2014-04-16 |
KR101612149B1 (ko) | 2016-04-12 |
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