US20110228396A1 - Optical filter and analytical instrument - Google Patents

Optical filter and analytical instrument Download PDF

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Publication number
US20110228396A1
US20110228396A1 US13/038,587 US201113038587A US2011228396A1 US 20110228396 A1 US20110228396 A1 US 20110228396A1 US 201113038587 A US201113038587 A US 201113038587A US 2011228396 A1 US2011228396 A1 US 2011228396A1
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United States
Prior art keywords
section
optical filter
mirror
substrate
surface section
Prior art date
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Abandoned
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US13/038,587
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English (en)
Inventor
Susumu SHINTO
Seiji Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
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Seiko Epson Corp
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Filing date
Publication date
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Assigned to SEIKO EPSON CORPORATION reassignment SEIKO EPSON CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: YAMAZAKI, SEIJI, SHINTO, SUSUMU
Publication of US20110228396A1 publication Critical patent/US20110228396A1/en
Priority to US15/084,637 priority Critical patent/US9703092B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/284—Interference filters of etalon type comprising a resonant cavity other than a thin solid film, e.g. gas, air, solid plates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/213—Fabry-Perot type
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12—Generating the spectrum; Monochromators
    • G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters

Definitions

  • the present invention relates to an optical filter and an analytical instrument.
  • an optical filter for selecting a light beam having a target wavelength from the incident light beams and then emitting the light beam there has been known an optical filter of an air-gap type and of an electrostatic-drive type, in which a pair of substrates are disposed so as to be opposed to each other, each of the surfaces of the substrates opposed to each other is provided with a mirror, electrodes are respectively disposed in the peripheries of the mirrors, a diaphragm section is disposed in the periphery of one of the mirrors, and the diaphragm section is displaced due to electrostatic force generated between the electrodes to thereby vary the gap (air gap) between the mirrors, thus taking out the light beam having a desired wavelength (e.g., JP-A-2003-57438).
  • a desired wavelength e.g., JP-A-2003-57438
  • the diaphragm is moved by electrostatic attractive force to thereby vary the gap between the mirrors. Therefore, it results that the applied voltage for generating the electrostatic attractive force necessary for the displacement of the gap varies in accordance with the thickness of the diaphragm section. Therefore, it is desirable for the diaphragm section to be as thin as possible in order for holding down the applied voltage.
  • thinning the diaphragm section causes degradation of strength, and in the optical filter repeatedly varying the gap stress is applied to the diaphragm section every time the gap is varied, and therefore, there arises a problem that the degradation of strength directly causes breakage of the diaphragm section.
  • An advantages of some aspects of the invention is to provide an optical filter and an optical module equipped with the optical filter each capable of preventing the degradation of strength of the diaphragm section even in the case of thinning the diaphragm section on the ground of holding down the applied voltage, and as a result, enhancing the strength of the diaphragm section while reducing the maximum applied voltage, varying the gap stably, and being driven preferably.
  • an optical filter including a lower substrate, a lower mirror provided to the lower substrate, a lower electrode provided to the lower substrate, an upper substrate disposed so as to be opposed to the lower substrate, an upper mirror provided to the upper substrate, and opposed to the lower mirror, and an upper electrode provided to the upper substrate, and opposed to the lower electrode, wherein the upper substrate has a groove surrounding the upper mirror in a plan view, the groove has a first side surface section, a second side surface section, a bottom surface section, a first end section located between the first side surface section and the bottom surface section, and a second end section located between the second side surface section and the bottom surface section, in a cross-sectional view, and the first end section and the second end section each have a curved surface.
  • the optical filter according to this aspect of the invention has a curved surface in each of the end sections of the groove.
  • the bottom surface section is flat, and the upper electrode is disposed on the upper substrate within a region located under the bottom surface section in the plan view.
  • the first end section is located nearer to the upper mirror, and the first end section fails to overlap the upper mirror in the plan view.
  • the lower substrate and the upper substrate each have a light transmissive property.
  • the transmittance of the light beam in the substrate is improved, and the strength of the light beam taken out is also raised. Therefore, the efficiency of taking out the light beam is improved.
  • the groove is formed by performing a wet-etching process after performing a dry-etching process.
  • the wet-etching process in the manufacturing process, it becomes easy to provide a curved surface shape to the end section, thereby making it possible to ease the stress concentration to the end sections, and thus the strength of the diaphragm section can be improved. Further, by combining the dry-etching process and the wet-etching process with each other, it becomes possible to reduce the time necessary for forming the groove, and at the same time to provide a structure in which the end sections of the groove each have a curved surface, thus the stress concentration to the end sections can be eased to thereby improve the strength of the diaphragm section. As a result, a stable gap variation becomes possible, and preferable drive becomes possible.
  • an analytical instrument using any one of the optical filters described above.
  • FIG. 1 is a plan view of an optical filter according to an embodiment of the invention.
  • FIG. 2 is a cross-sectional view of the optical filter according to the embodiment.
  • FIG. 3 is a diagram showing a relationship between the wavelength and the transmittance in the case of applying no voltage in the optical filter according to the embodiment.
  • FIG. 4 is a diagram showing a relationship between the wavelength and the transmittance in the case of applying a voltage in the optical filter according to the embodiment.
  • FIGS. 5A through 5C are diagrams for explaining a method of manufacturing the optical filter according to the embodiment.
  • FIGS. 6A and 6B are diagrams for explaining the method of manufacturing the optical filter according to the embodiment.
  • FIGS. 7A through 7C are diagrams for explaining the method of manufacturing the optical filter according to the embodiment.
  • FIGS. 8A through 8C are diagrams for explaining the method of manufacturing the optical filter according to the embodiment.
  • FIGS. 9A and 9B are diagrams for explaining the method of manufacturing the optical filter according to the embodiment.
  • optical filter according to an embodiment of the invention.
  • an optical filter of an air-gap type and of an electrostatic-drive type will be explained.
  • the reference numeral 1 denotes an optical filter of the air-gap type and of the electrostatic-drive type.
  • the optical filter 1 is composed of an upper substrate 2 , a lower substrate 3 bonded (or joined with an adhesive) to the upper substrate 2 in the state of being opposed thereto, a mirror 4 A (an upper mirror) having a circular shape disposed at a central portion of an opposed surface 2 a of the upper substrate 2 , the opposed surface 2 a being opposed to the lower substrate 3 , a mirror 4 B (a lower mirror) having a circular shape disposed at a central portion of a bottom surface of a first recessed section 5 formed at a central portion of a surface of the lower substrate 3 , the surface being opposed to the upper substrate 2 , so as to be opposed to the mirror 4 A via a first gap G 1 , an electrode 6 A (an upper electrode) having a ring shape disposed in the periphery of the mirror 4 A of the upper substrate 2 , an electrode 6 B (a lower electrode)
  • the diaphragm section 8 is composed of a first side surface section 8 c, a second side surface section 8 e, a bottom surface section 8 a, a first end section 8 b located between the first side surface section 8 c and the bottom surface section 8 a, and a second end section 8 d located between the second side surface section 8 e and the bottom surface section 8 a. Further, the first side surface section 8 b located near to the mirror 4 A in the diaphragm section 8 is formed so as not to overlap the mirror 4 A in a plan view. By adopting such a structure as described above, it is possible to prevent the propagation of the light beam entering the mirror 4 A from being blocked by the first side surface section 8 c of the diaphragm section 8 .
  • the electrodes 6 A, 6 B disposed so as to be opposed to each other via the second gap G 2 and the diaphragm 8 constitute an electrostatic actuator.
  • glass As the material of the upper substrate 2 and the lower substrate 3 , glass can be used.
  • glass specifically, soda glass, crystallized glass, quartz glass, lead glass, potassium glass, borosilicate glass, sodium borosilicate glass, alkali-free glass, and so on are preferably used.
  • electromagnetic waves in a desired wavelength band or visible light can be used as the incident light.
  • the mirrors 4 A, 4 B are disposed so as to be opposed to each other via the first gap G 1 , and are each composed of a dielectric multilayer film having high-refractive index layers and low-refractive index layers stacked alternately to each other. It should be noted that the mirrors 4 A, 4 B are not limited to the dielectric multilayer films, but alloy films having silver as a principal constituent or multilayer films thereof, for example, can also be used.
  • one 4 A of the mirrors is provided to the upper substrate 2 , which is deformable, and is therefore called a movable mirror, and the other 4 B of the mirrors is disposed to the lower substrate 3 , which is undeformable, and is therefore called a fixed mirror in some cases.
  • the optical filter 1 in the visible light region or the infrared light region, as the material of forming the high-refractive index layers in the dielectric multilayer film, titanium oxide (Ti 2 O), tantalum oxide (Ta 2 O 5 ), niobium oxide (Nb 2 O 5 ), and so on can be used. Further, in the case of using the optical filter 1 in the ultraviolet light region, as the material of forming the high-refractive index layers, aluminum oxide (Al 2 O 3 ), hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), thorium oxide (ThO 2 ), and so on can be used.
  • magnesium fluoride MgF 2
  • silicon oxide SiO 2
  • the number of layers and thickness of the high-refractive index layers and the low-refractive index layers are appropriately set based on the necessary optical characteristics.
  • the number of layers necessary for obtaining the optical characteristics is equal to or larger than 12.
  • the electrodes 6 A, 6 B are disposed so as to be opposed to each other via the second gap G 2 , and for constituting a part of the electrostatic actuator for generating electrostatic force between the electrode 6 A, 6 B in accordance with the drive voltage input thereto to thereby move the mirrors 4 A, 4 B relatively to each other in the state in which the mirrors are opposed to each other.
  • the electrodes 6 A, 6 B are arranged to displace the diaphragm section 8 in a vertical direction in FIG. 2 to vary the first gap G 1 between the mirrors 4 A, 4 B, thereby emitting the light beam with a wavelength corresponding to the first gap G 1 .
  • the electrode 6 A is disposed within a region located under the bottom surface section 8 a, which is a flat plane. If the electrode 6 A is formed to overlap the first end section 8 b and the second end section 8 d each having a curved surface, when driving the diaphragm section 8 , the diaphragm section 8 is distorted to cause large stress in the electrode 6 A located under the first end section 8 b and the second end section 8 d. Thus, there is a possibility that a problem such as a crack arises in the electrode 6 A. However, by forming the electrode 6 A within the region under the bottom surface section 8 a which is a flat plane, the crack and so on of the electrode 6 A due to the distortion of the diaphragm section 8 can be prevented.
  • the electrodes 6 A, 6 B are also parallel to each other.
  • the material for forming the electrodes 6 A, 6 B is conductive, and the material is not particularly limited.
  • metal such as Cr, Al, Al alloy, Ni, Zn, Ti, or Au, resin having carbon or titanium dispersed, silicon such as polycrystalline silicon (polysilicon) or amorphous silicon, or a transparent conductive material such as silicon nitride or ITO can be used as the material.
  • wiring lines 11 A, 11 B are connected respectively to the electrodes 6 A, 6 B, and the electrodes 6 A, 6 B are connected to a power supply (not shown) via the wiring lines 11 A, 11 B.
  • the wiring lines 11 A, 11 B are formed in a wiring groove 12 A provided to the upper substrate 2 or a wiring groove 12 B provided to the lower substrate 3 . Therefore, it is arranged that the wiring lines do not interfere the bonding between the upper substrate 2 and the lower substrate 3 .
  • the power supply is for applying a voltage to the electrodes 6 A, 6 B as a drive signal to thereby drive the electrodes 6 A, 6 B, thus generating desired electrostatic force between the electrodes 6 A, 6 B.
  • a control device (not shown) is connected to the power supply, and it is arranged that by controlling the power supply using the control device, the electrical potential difference between the electrodes 6 A, 6 B can be adjusted.
  • the diaphragm section 8 has a smaller thickness compared to a portion of the upper substrate 2 where the diaphragm section 8 is not formed.
  • the portion of the upper surface 2 with a smaller thickness compared to the other portion of the upper substrate 2 as described above is arranged to be deformable (displaceable) with elasticity (flexibility), and thus, the diaphragm section 8 is arranged to have a wavelength selection function for varying the first gap G 1 to change the distance between the mirrors 4 A, 4 B to a distance corresponding to a light beam with a desired wavelength, thereby outputting the light beam with the desired wavelength.
  • the shape and the thickness of the diaphragm section 8 are not particularly limited providing the light beams having wavelengths within a desired wavelength range can be output, and are specifically set in accordance with the wavelength range of the output light beam required for the optical filter 1 taking the variation amount, the variation speed, and so on of the distance between the mirrors 4 A, 4 B into consideration.
  • the optical filter 1 in the case in which the control device and the power supply are not driven, and therefore, no voltage is applied between the electrodes 6 A, 6 B, the mirror 4 A and the mirror 4 B are opposed to each other via the first gap G 1 . Therefore, when a light beam enters the optical filter 1 , it results that the light beam with the wavelength corresponding to the first gap G 1 , for example, the light beam with the wavelength of 720 nm is output as shown in FIG. 3 .
  • the control device controls the power supply to thereby apply a desired voltage between the electrodes 6 A, 6 B, thus making it possible to generate desired electrostatic force between the electrodes 6 A, 6 B.
  • the electrodes 6 A, 6 B are attracted to each other due to the electrostatic force to thereby deform the upper substrate 2 toward the lower substrate 3 , and thus the first gap G 1 between the mirrors 4 A, 4 B is narrowed compared to the case in which no voltage is applied.
  • the stress is caused in the first end section 8 b and the second end section 8 d by the movement of the diaphragm section 8 due to the electrostatic force.
  • the first end section 8 b and the second end section 8 d each have a shape with a large curvature radius, it becomes difficult to cause the stress concentration, the breakage is hardly caused even by repeated drive of the diaphragm section 8 , and thus preferable drive is repeated.
  • the optical filter 1 when a light beam enters the optical filter 1 , it results that the light beam with the wavelength corresponding to the displaced first gap G 1 , for example, the light beam with the wavelength of 590 nm is output, and the transmission wavelength is shifted toward a shorter wavelength as shown in FIG. 4 .
  • FIGS. 5A through 5C , 6 A, 6 B, 7 A through 7 C, 8 A through 8 C, 9 A, and 9 B are cross-sectional views showing a method of manufacturing the optical filter 1 according to the present embodiment.
  • the manufacturing method includes a manufacturing process of the upper substrate and a manufacturing process of the lower substrate.
  • a manufacturing process of the upper substrate includes a manufacturing process of the upper substrate and a manufacturing process of the lower substrate.
  • a mask layer 51 is deposited on the entire surface of the upper substrate 2 .
  • a material for composing the mask layer 51 for example, a metal film made of Cr/Au or the like can be used.
  • the thickness of the mask layer 51 is not particularly limited, but is preferably set to about 0.01 through 1 ⁇ m, further preferably about 0.1 through 0.3 ⁇ m. If the mask layer 51 is too thin, the upper substrate 2 may not sufficiently be protected, and if the mask layer 51 is too thick, the mask layer 51 may become easy to be peeled off due to the internal stress of the mask layer 51 .
  • a Cr/Au film is deposited as the mask layer 51 by a sputtering process to have a thickness of the Cr layer of 0.01 ⁇ m and a thickness of the Au layer of 0.3 ⁇ m.
  • an opening section 51 a for forming the diaphragm section 8 is provided to the mask layer 51 .
  • the opening section 51 a can be formed by, for example, a photolithography process. Specifically, a resist layer (not shown) having a pattern corresponding to the opening section 51 a is formed on the mask layer 51 , and then the mask layer 51 is removed partially using the resist layer as a mask, and then the resist layer is removed to thereby form the opening section 51 a. It should be noted that the partial removal of the mask layer 51 is performed by a wet-etching process or the like.
  • the upper substrate 2 is etched by a wet-etching process to thereby form the diaphragm section 8 .
  • a wet-etching process As an etching fluid, hydrofluoric acid or buffered hydrofluoric acid (BHF), for example, can be used.
  • BHF buffered hydrofluoric acid
  • the diaphragm section 8 can be formed by performing a wet-etching process after performing a dry-etching process.
  • the electrode 6 A and the wiring line 11 A are formed.
  • a material for forming the electrode 6 A and the wiring line 11 A a metal film made of, for example, Cr, Al, or a transparent conductive material such as ITO can be used.
  • the thickness of the electrode 6 A and the wiring line 11 A is preferably set to, for example, 0.1 through 0.2 ⁇ m.
  • the metal film or the like is deposited by a vapor deposition process, a sputtering process, an ion-plating process or the like, and then the film is patterned by a photolithography process and an etching process.
  • the mirror 4 A is formed at a position 2 a ′ on the opposed surface 2 a surrounded by the diaphragm section 8 .
  • titanium oxide (Ti 2 O) as a material for forming the high-refractive index layer and silicon oxide (SiO 2 ) as a material for forming the low-refractive index layer are stacked to each other, and then these layers are patterned by a liftoff process to thereby obtain the mirror 4 A.
  • a mask layer 61 is deposited on the opposed surface 3 a of the lower substrate 3 opposed to the upper substrate 2 .
  • a typical resist material is used as a material for forming the mask layer 61 .
  • an opening section 61 a for forming the second recessed section 7 is provided to the mask layer 61 .
  • the opening section 61 a can be formed by a photolithography process.
  • the lower substrate 3 is etched by a wet-etching process to form the second recessed section 7 .
  • a wet-etching process As an etching fluid, hydrofluoric acid or buffered hydrofluoric acid (BHF), for example, can be used.
  • BHF buffered hydrofluoric acid
  • the method of forming the second recessed section 7 is not limited to the wet-etching process, but other etching processes such as a dry-etching process can also be used.
  • the first recessed section 5 is then formed in the same manner as the formation of the second recessed section 7 .
  • a mask layer 62 is deposited on the lower substrate 3 , as shown in FIG. 8A , to thereby form an opening section 62 a for forming the first recessed section 5 .
  • the lower substrate 3 is etched by a wet-etching process to form the first recessed section 5 .
  • FIG. 8C by removing the mask layer 62 by the etching process, the lower substrate 3 provided with the first and second recessed sections 5 , 7 can be obtained.
  • the electrode 6 B and the wiring line 11 B are formed.
  • a material for forming the electrode 6 B and the wiring line 11 B a metal film made of, for example, Cr, Al, or a transparent conductive material such as ITO can be used.
  • the thickness of the electrode 6 B and the wiring line 11 B is preferably set to, for example, 0.1 through 0.2 ⁇ m.
  • the metal film or the like is deposited by a vapor deposition process, a sputtering process, an ion-plating process or the like, and then the film is patterned by a photolithography process and an etching process.
  • the mirror 4 B is formed at a position opposed to the mirror 4 A disposed on the upper substrate 2 .
  • titanium oxide (Ti 2 O) as a material for forming the high-refractive index layer and silicon oxide (SiO 2 ) as a material for forming the low-refractive index layer are stacked to each other, and then these layers are patterned by a liftoff process to thereby obtain the mirror 4 B.
  • the optical filter of the present embodiment when varying the first gap G 1 in order for selectively taking out the wavelength, the stress is caused in the first end section 8 b and the second end section 8 d by the movement of the diaphragm section 8 .
  • the first end section 8 b and the second end section 8 d each have a shape with a large curvature radius, it becomes difficult to cause the stress concentration, the breakage is hardly caused even by repeated drive of the diaphragm section 8 , and thus preferable drive is repeated.
  • optical filter according to the invention can be applied to an analytical instrument such as a colorimeter for measuring colors or a gas detector for measuring gasses.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Micromachines (AREA)
  • Optical Filters (AREA)
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EP (6) EP2367057B1 (enrdf_load_stackoverflow)
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KR (1) KR20110105713A (enrdf_load_stackoverflow)
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US20140168775A1 (en) * 2012-12-19 2014-06-19 Seiko Epson Corporation Wavelength variable interference filter, manufacturing method of wavelength variable interference filter, optical filter device, optical module, and electronic apparatus
US20140226988A1 (en) * 2013-02-12 2014-08-14 Avago Technologies General Ip (Singapore) Pte. Ltd Bidirectional optical data communications module having reflective lens
US9170157B2 (en) 2010-10-07 2015-10-27 Seiko Epson Corporation Tunable interference filter, optical module, photometric analyzer, and manufacturing method of tunable interference filter
US20220206284A1 (en) * 2020-12-24 2022-06-30 Seiko Epson Corporation Wavelength variable optical filter
US11474342B2 (en) 2019-06-21 2022-10-18 Seiko Epson Corporation Wavelength-tunable interference filter

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