US20110227082A1 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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US20110227082A1
US20110227082A1 US13/048,023 US201113048023A US2011227082A1 US 20110227082 A1 US20110227082 A1 US 20110227082A1 US 201113048023 A US201113048023 A US 201113048023A US 2011227082 A1 US2011227082 A1 US 2011227082A1
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oxide semiconductor
semiconductor layer
current value
photoelectric current
layer
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Inventor
Takayuki Inoue
Masashi TSUBUKU
Suzunosuke Hiraishi
Junichiro Sakata
Erumu Kikuchi
Hiromichi Godo
Akiharu Miyanaga
Shunpei Yamazaki
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Assigned to SEMICONDUCTOR ENERGY LABORATORY CO., LTD. reassignment SEMICONDUCTOR ENERGY LABORATORY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SAKATA, JUNICHIRO, GODO, HIROMICHI, HIRAISHI, SUZUNOSUKE, TSUBUKU, MASASHI, INOUE, TAKAYUKI, KIKUCHI, ERUMU, MIYANAGA, AKIHARU, YAMAZAKI, SHUNPEI
Publication of US20110227082A1 publication Critical patent/US20110227082A1/en
Priority to US14/330,113 priority Critical patent/US9601633B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Definitions

  • One of embodiments of the present invention relates to a semiconductor element such as a transistor and/or a semiconductor device at least part of which is formed using the semiconductor element.
  • a semiconductor element such as a transistor and/or a semiconductor device at least part of which is formed using the semiconductor element.
  • an active element including an oxide semiconductor is described as the semiconductor element, and a display device including the active element is described.
  • transistors including amorphous silicon have been used for conventional display devices typified by liquid crystal televisions
  • an oxide semiconductor has attracted attention as a material which replaces a silicon semiconductor in order to form transistors.
  • an active matrix display device in which an amorphous oxide containing In, Ga, and Zn is used for an active layer of a transistor and the electron carrier concentration of the amorphous oxide is less than 10 18 /cm 3 (see Patent Document 1).
  • An oxide semiconductor formed of a metal oxide has a band gap of about 3 eV and originally has a light-transmitting, property with respect to visible light.
  • a film comprising the oxide semiconductor deteriorates when being irradiated with strong light (the deterioration is called light deterioration).
  • a backlight is used in a liquid crystal display device; when a transistor including an oxide semiconductor is irradiated with light from the backlight, for example, leakage current might be generated in an off state of the transistor owing to photoexcitation, which leads to reduction in display quality, or light deterioration might be caused. Further, it is known that a single-layer oxide semiconductor film formed of a metal oxide has a photoelectric current value of about 10 ⁇ A.
  • Carriers in a semiconductor can be described by continuity equations, Formula 1 and Formula 2.
  • n and p represent carrier density of electrons and carrier density of holes
  • J n and J p represent a current value of electrons and a current value of holes
  • G n and G p represent a generation probability of electrons and a generation probability of holes
  • R n and R p represent a recombination probability of electrons and a recombination probability of holes.
  • the number of hole carriers is divided into the number of hole carriers p 0 in a thermal equilibrium state and the number of hole carriers ⁇ p in a non-thermal equilibrium state.
  • the carrier density of holes can be expressed by Formula 3.
  • Formula 5 is solved with an initial photoelectric current value at 0, which leads to a carrier concentration expressed by Formula 6.
  • ⁇ ⁇ ⁇ p ⁇ ( t ) ⁇ ⁇ ⁇ p ⁇ ( t 0 ) ⁇ exp ⁇ ( - t - t 0 ⁇ p ) ⁇ ⁇ ( t ⁇ t 0 ) [ Formula ⁇ ⁇ 7 ]
  • I ⁇ ( t ) ⁇ I 0 ⁇ [ 1 - exp ⁇ ( - t ⁇ p ) ] ( 0 ⁇ t ⁇ t 0 ) I 0 ⁇ [ 1 - exp ⁇ ( - t 0 ⁇ p ) ] ⁇ exp ⁇ ( - t - t 0 ⁇ p ) ( t ⁇ t 0 ) [ Formula ⁇ ⁇ 8 ]
  • the relaxation time ⁇ depends on a model of carrier recombination. There are many types of recombination processes. Basically, two types of processes, direct recombination and indirect recombination (SRH recombination), can be given.
  • some traps can capture a hole but cannot easily capture an electron, where recombination hardly occurs. Such a trap is called a “safe” trap in this specification.
  • FIG. 6A is a schematic diagram of the “safe” trap.
  • FIG. 6B is a schematic diagram showing a transition due to heat after trapping.
  • an oxide semiconductor layer which exhibits two kinds of modes in photoresponse is used, whereby a transistor in which light deterioration is suppressed to the minimum and the electric characteristics are stable is achieved.
  • the oxide semiconductor layer which exhibits two kinds of modes in photoresponse has a photoelectric current value of greater than or equal to 1 pA, preferably greater than or equal to 10 pA and less than or equal to 10 nA.
  • a photoelectric current value after 100 seconds of light irradiation is greater than or equal to 400 aA/ ⁇ m and less than or equal to 0.1 pA/ ⁇ m at 25° C. and light deterioration can be suppressed to the minimum.
  • I ⁇ ( t ) A ⁇ ⁇ ⁇ p ⁇ ( D e D h ⁇ ⁇ 2 ⁇ 1 ) ⁇ exp ⁇ ( - t ⁇ 2 ) ⁇ ⁇ ( t ⁇ ⁇ 1 ) [ Formula ⁇ ⁇ 9 ]
  • PDEM photoresponse defect evaluation method
  • a liquid crystal display device in which a transistor including an oxide semiconductor is provided in a pixel has high reliability with respect to light deterioration.
  • FIG. 1 is a graph showing photoresponse characteristics of oxide semiconductor layers.
  • FIG. 2 is a graph enlarging a region in the range of 0 sec to 100 sec in FIG. 1 .
  • FIG. 3 is a graph showing photoresponse characteristics of oxide semiconductor layers with the use of a logarithmic scale.
  • FIG. 4 is a graph showing photoresponse characteristics of oxide semiconductor layers with the use of a linear scale.
  • FIG. 5 is a graph for showing a method for estimating ⁇ 1 with the use of data in FIG. 2 .
  • FIGS. 6A and 6B are schematic diagrams of a “safe” trap.
  • FIG. 7A is a top view of an electrode and FIG. 7B is a cross-sectional view illustrating the structure of a TEG.
  • FIGS. 8A to 8D are cross-sectional views each illustrating the structure of a transistor.
  • FIG. 9 is a graph showing the emission spectrum of a white LED.
  • a TEG was manufactured with the use of an oxide semiconductor.
  • the photoresponse characteristics of the oxide semiconductor before and after irradiation with light (luminance: 17000 cd/cm 2 ) for 600 seconds were measured.
  • a graph of the photoresponse characteristics (a graph showing time dependence of photoelectric current) is made.
  • the structure of the TEG used for evaluation is as follows: the channel length (L) is 200 ⁇ m, the channel width (W) is 2.09 cm, the thickness of a thick portion of an In—Ga—Zn—O film is 50 nm, and the thickness of a thin portion of the In—Ga—Zn—O film is 25 nm.
  • the cross-sectional structure of this TEG is illustrated in FIG. 7B .
  • an In—Ga—Zn—O film 102 is formed over a glass substrate 101
  • a first electrode 103 and a second electrode 104 are formed over the In—Ga—Zn—O film 102 .
  • FIG. 7A illustrates the top shapes of the first electrode 103 and the second electrode 104 .
  • the space between the first electrode 103 and the second electrode 104 is 200 ⁇ m, and a region of the In—Ga—Zn—O film 102 which overlaps with the region between the first electrode 103 and the second electrode 104 is 25 nm, which is thinner than a region overlapping with the first electrode 103 or the second electrode 104 as illustrated in FIG. 7 B.
  • an insulating layer 105 is formed over the first electrode 103 and the second electrode 104 so as to prevent the In—Ga—Zn—O film 102 from being exposed.
  • a white LED (MDBL-CW100 produced by Moritex Corporation) was used as a light source for emitting light with which the In—Ga—Zn—O film 102 was irradiated.
  • the emission spectrum of this white LED is shown in FIG. 9 .
  • the film formation conditions of the In—Ga—Zn—O film are as follows: the film formation temperature is room temperature, the flow of argon is 10 sccm, the flow of oxygen is 5 sccm, the pressure is 0.4 Pa, and the power is 500 W.
  • heat treatment is performed at 450° C. for 1 hour in a nitrogen atmosphere.
  • This heat treatment is preferably performed in an atmosphere of nitrogen or a rare gas such as helium, neon, or argon in which water, hydrogen, or the like is not contained, for example, the dew point is lower than or equal to ⁇ 40° C., preferably lower than or equal to ⁇ 60° C.
  • the purity of nitrogen or a rare gas such as helium, neon, or argon which is introduced into a heat treatment apparatus be set to be greater than or equal to 6N (99.9999%), preferably greater than or equal to 7N (99.99999%) (that is, the impurity concentration is less than or equal to 1 ppm, preferably less than or equal to 0.1 ppm).
  • a layered conductive film is formed by stacking a titanium nitride film with a thickness of 50 nm, a titanium film with a thickness of 50 nm, an aluminum film with a thickness of 200 nm, and a titanium film with a thickness of 50 nm by a sputtering method.
  • a resist mask is formed over the layered conductive film through a photolithography step, and etching is performed selectively to form the first electrode 103 and the second electrode 104 . After that, O 2 ashing is performed, whereby a part of the In—Ga—Zn—O film which is exposed is thinned to 25 nm, and then, the resist mask is removed.
  • a silicon oxide film with a thickness of 300 nm is formed over the first electrode 103 and the second electrode 104 .
  • a resist mask is formed over the silicon oxide film through a photolithography step, and etching is performed selectively to form the insulating layer 105 . After that, heat treatment is performed at 250° C. for 1 hour in a nitrogen atmosphere.
  • FIG. 1 is a graph showing the photoresponse characteristics of oxide semiconductor layers.
  • the horizontal axis indicates time and the vertical axis indicates a current value.
  • the light source is turned off at time 0.
  • FIG. 2 is a graph enlarging a region in the range of 0 sec to 100 sec in FIG. 1 .
  • Table 1 is a list showing numerical values in FIG. 1 .
  • a photoelectric current value per micrometer shown in Table 1 was obtained by calculation.
  • the photoelectric current value per micrometer after 100 seconds of irradiation of the oxide semiconductor layer with light at 25° C. was found to be 593 pA/ ⁇ m.
  • TEGs were manufactured under conditions partly different from those of the above three samples.
  • the film formation conditions of the In—Ga—Zn—O film of a fourth sample and a fifth sample are as follows: the film formation temperature is room temperature, the flow of argon is 10.5 sccm, the flow of oxygen is 4.5 sccm, and the power is 100 W. Note that other film formation conditions and the film thickness are the same as the above three samples.
  • the fourth sample was subjected to heat treatment at 650° C. for 1 hour in a nitrogen atmosphere.
  • the fifth sample was subjected to heat treatment at 650° C. for 1 hour in a nitrogen atmosphere and then heat treatment at 450° C. for 1 hour in an atmosphere containing oxygen and nitrogen.
  • a single-layer oxide semiconductor film (OS film 1 ) formed using a metal oxide which was used as a comparative example has a photoelectric current value of about greater than or equal to 1 ⁇ A and less than or equal to 10 ⁇ A.
  • a single-layer oxide semiconductor film (OS film 2 ) of this embodiment has a photoelectric current value of about greater than or equal to 10 pA and less than or equal to 10 nA.
  • the rise and the fall of the photoresponse characteristics are sharp, and the current value is very small.
  • a tendency similar to the above is observed.
  • Fitting of ⁇ 2 can be performed using the current formula expressed by Formula 9.
  • a region in the range of 20 sec to 100 sec in FIG. 2 which is a graph using a logarithmic scale was plotted with the use of a linear scale, and fitting was performed.
  • FIG. 5 shows a method for estimating ⁇ 1 .
  • ⁇ 1 can be regarded as substantially the same at all temperatures in consideration of the temporal resolution for measurement, ⁇ 2 does not depend on the temperature, either. This is because ⁇ 1 and ⁇ 2 depend on the trap density.
  • the rate of reduction in current is small. This is because the probability of thermal excitation from the traps is higher as the temperature is higher.
  • the curve showing the photoresponse characteristics has two kinds of modes because “safe” traps exist around the conduction band or the valence band.
  • the channel length was varied, and the measurement was performed under the conditions shown in Table 1.
  • the structures of the TEGs used for evaluation are as follows: the channel length (L) was set to 50 ⁇ m, 100 ⁇ m, and 200 ⁇ m in respective TEGs, and the channel width (W) was set to 2.09 cm.
  • the measurement results are shown in Table 3. Note that the measurement temperature is 25° C.
  • a photoelectric current value per micrometer was obtained by calculation and shown in Table 3. In the TEG in which the channel length (L) is 50 ⁇ m, after 100 seconds of irradiation of the oxide semiconductor layer with light, a photoelectric current value per micrometer of channel length is 97.7 fA/ ⁇ m.
  • a photoelectric current value per micrometer of channel length is 42.5 fA/ ⁇ m.
  • a photoelectric current value per micrometer of channel length is 13.7 fA/ ⁇ m.
  • a photoelectric current value per micrometer of channel length is 413 aA/ ⁇ m.
  • the oxide semiconductor layer has a photoelectric current value of greater than or equal to 400 aA/ ⁇ m and less than or equal to 0.1 pA/ ⁇ m after 100 seconds of light irradiation, which means that light deterioration is suppressed to the minimum. Therefore, a transistor whose electric characteristics are stable can be achieved by using the oxide semiconductor layer.
  • Ion A) 1 sec (A) 10 sec (A) 100 sec (A) 100 sec (A) 50 3.2704E ⁇ 08 6.707E ⁇ 11 1.39891E ⁇ 11 4.88727E ⁇ 12 9.77455E ⁇ 14 100 2.19308E ⁇ 08 9.256E ⁇ 11 1.28518E ⁇ 11 4.24727E ⁇ 12 4.24727E ⁇ 14 200 7.1513E ⁇ 09 9.15E ⁇ 12 2.19636E ⁇ 12 2.73364E ⁇ 12 1.36682E ⁇ 14 500 1.7527E ⁇ 09 2.34E ⁇ 12 1.25455E ⁇ 12 2.06364E ⁇ 13 4.12727E ⁇ 16
  • a TEG is shown as an example, but the present invention is not limited thereto.
  • a transistor including the same oxide semiconductor light deterioration can be suppressed to the minimum and the electric characteristics can be stable.
  • a liquid crystal display device in which a transistor including the same oxide semiconductor is provided in a pixel has high reliability with respect to light deterioration.
  • FIGS. 8A to 8D each illustrate an example of the cross-sectional structure of a transistor.
  • the transistors illustrated in FIGS. 8A to 8D each include an oxide semiconductor as a semiconductor.
  • a transistor 410 illustrated in FIG. 8A is a kind of bottom-gate thin film transistor, and is also referred to as an inverted-staggered thin film transistor.
  • the transistor 410 includes, over a substrate 400 having an insulating surface, a gate electrode layer 401 , a gate insulating layer 402 , an oxide semiconductor layer 403 , a source electrode layer 405 a , and a drain electrode layer 405 b . Further, an insulating layer 407 stacked over the oxide semiconductor layer 403 is provided so as to cover the transistor 410 . A protective insulating layer 409 is formed over the insulating layer 407 .
  • the insulating layer 407 is in contact with the oxide semiconductor layer 403 and can be formed using a material such as GaOx (x>0), SiOx (x>0), or nitride (except for titanium nitride).
  • a material such as GaOx (x>0), SiOx (x>0), or nitride (except for titanium nitride).
  • GaOx when GaOx is used, the insulating layer 407 can function as a film for preventing electrification of a back channel.
  • a transistor 420 illustrated in FIG. 8B has a kind of bottom-gate structure referred to as a channel-protective type (channel-stop type) and is also referred to as an inverted-staggered thin film transistor.
  • the transistor 420 includes, over a substrate 400 having an insulating surface, a gate electrode layer 401 , a gate insulating layer 402 , an oxide semiconductor layer 403 , an insulating layer 427 which functions as a channel protective layer covering a channel formation region of the oxide semiconductor layer 403 , a source electrode layer 405 a , and a drain electrode layer 405 b . Further, a protective insulating layer 409 is formed so as to cover the transistor 420 .
  • a transistor 430 illustrated in FIG. 8C is a bottom-gate thin film transistor and includes, over a substrate 400 which is a substrate having an insulating surface, a gate electrode layer 401 , a gate insulating layer 402 , a source electrode layer 405 a , a drain electrode layer 405 b , and an oxide semiconductor layer 403 . Further, an insulating layer 407 being in contact with the oxide semiconductor layer 403 is provided so as to cover the transistor 430 . A protective insulating layer 409 is formed over the insulating layer 407 .
  • the gate insulating layer 402 is provided on and in contact with the substrate 400 and the gate electrode layer 401 , and the source electrode layer 405 a and the drain electrode layer 405 b are provided on and in contact with the gate insulating layer 402 . Further, the oxide semiconductor layer 403 is provided over the gate insulating layer 402 , the source electrode layer 405 a , and the drain electrode layer 405 b.
  • a transistor 440 illustrated in FIG. 8D is a kind of top-gate thin film transistor.
  • the transistor 440 includes, over a substrate 400 having an insulating surface, an insulating layer 437 , an oxide semiconductor layer 403 , a source electrode layer 405 a , a drain electrode layer 405 b , a gate insulating layer 402 , and a gate electrode layer 401 .
  • a wiring layer 436 a and a wiring layer 436 b are provided in contact with and electrically connected to the source electrode layer 405 a and the drain electrode layer 405 b , respectively.
  • the oxide semiconductor layer 403 is used as a semiconductor layer.
  • a four-component metal oxide such as an In—Sn—Ga—Zn—O-based oxide semiconductor
  • a three-component metal oxide such as an In—Ga—Zn—O-based oxide semiconductor, an In—Sn—Zn—O-based oxide semiconductor, an In—Al—Zn—O-based oxide semiconductor, a Sn—Ga—Zn—O-based oxide semiconductor, an Al—Ga—Zn—O-based oxide semiconductor, or a Sn—Al—Zn—O-based oxide semiconductor
  • a two-component metal oxide such as an In—Zn—O-based oxide semiconductor, a Sn—Zn—O-based oxide semiconductor, an Al—Zn—O-based oxide semiconductor, a Zn—Mg—O-based oxide semiconductor, a Sn—Mg—O-based oxide semiconductor, an In—Ga—O-based oxide
  • the In—Ga—Zn—O-based oxide semiconductor means an oxide containing at least In, Ga, and Zn, and the composition ratio of the elements is not particularly limited.
  • the In—Ga—Zn—O-based oxide semiconductor may contain an element other than In, Ga, and Zn.
  • oxide semiconductor layer 403 a thin film of a material represented by a chemical formula, InMO 3 (ZnO) m (m>0), can be used.
  • M represents one or more metal elements selected from Ga, Al, Mn, and Co.
  • M can be Ga, Ga and Al, Ga and Mn, Ga and Co, or the like.
  • a target used for forming the In—Zn—O-based oxide semiconductor has a composition ratio of In:Zn:O X:Y:Z in an atomic ratio, Z>(1.5X+Y).
  • the oxide semiconductor layer 403 in each of the transistors 410 , 420 , 430 , and 440 is preferably heated at a temperature of higher than or equal to 450° C. in an atmosphere which does not contain moisture and hydrogen.
  • heat treatment is performed at 650° C. for 1 hour in a nitrogen atmosphere and then heat treatment is performed at 450° C. for 1 hour in an atmosphere containing nitrogen and oxygen.
  • the heat treatment may be performed with the use of ultra-dry air (in which the dew point is lower than or equal to ⁇ 40° C., preferably lower than or equal to ⁇ 60° C.) as an atmosphere containing nitrogen and oxygen. With this heat treatment, light deterioration can be suppressed to the minimum, and a transistor whose electric characteristics are stable can be provided.
  • the amount of current in an off state can be small. Therefore, by using the transistor including the oxide semiconductor layer 403 in a pixel portion of a liquid crystal display device, an electric signal such as image data can be held for a longer period and a writing interval can be set longer. Accordingly, frequency of refresh operation can be reduced, which leads to an effect of suppressing power consumption.
  • the transistors 410 , 420 , 430 , and 440 each including the oxide semiconductor layer 403 can have relatively high field-effect mobility and thus can operate at high speed. Therefore, by using any of the above transistors in a pixel portion of a liquid crystal display device, a high-quality image can be provided. In addition, since a driver circuit portion and the pixel portion can be manufactured over one substrate with the use of the transistor including the oxide semiconductor layer 403 , the number of components of the liquid crystal display device can be reduced.
  • a substrate that can be used as the substrate 400 having an insulating surface a glass substrate made of barium borosilicate glass, aluminoborosilicate glass, or the like can be used.
  • an insulating film serving as a base film may be provided between the substrate and the gate electrode layer.
  • the base film has a function of preventing diffusion of impurity elements from the substrate, and can be formed to have a single-layer structure or a layered structure using one or more of a silicon nitride film, a silicon oxide film, a silicon nitride oxide film, and a silicon oxynitride film.
  • the gate electrode layer 401 can be formed to have a single-layer structure or a layered structure using a metal material such as molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, or scandium, or an alloy material which contains any of these materials as its main component.
  • a metal material such as molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, or scandium, or an alloy material which contains any of these materials as its main component.
  • the gate insulating layer 402 can be formed with a single-layer structure or a layered structure using one or more of a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, a silicon nitride oxide layer, an aluminum oxide layer, an aluminum nitride layer, an aluminum oxynitride layer, an aluminum nitride oxide layer, and a hafnium oxide layer by a plasma CVD method, a sputtering method, or the like.
  • a silicon nitride layer (SiN y (y>0)) with a thickness of greater than or equal to 50 nm and less than or equal to 200 nm is formed as a first gate insulating layer, and a silicon oxide layer (SiO x (x>0)) with a thickness of greater than or equal to 5 nm and less than or equal to 300 nm is formed as a second gate insulating layer over the first gate insulating layer, so that a gate insulating layer with a total thickness of 200 nm is formed.
  • a film of an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W for example, a film of an alloy containing any of these elements as its component, a film of an alloy containing any of these elements in combination, or the like can be used.
  • the conductive film may have a structure in which a high-melting-point metal layer of Ti, Mo, W, or the like is stacked over and/or below a metal layer of Al, Cu, or the like.
  • an Al material to which an element (e.g., Si, Nd, or Sc) which prevents generation of hillocks and whiskers in an Al film is added is used, heat resistance can be increased.
  • a material similar to that for the source electrode layer 405 a and the drain electrode layer 405 b can be used for a conductive film used for the wiring layer 436 a and the wiring layer 436 b which are respectively connected to the source electrode layer 405 a and the drain electrode layer 405 b.
  • the conductive film used for the source electrode layer 405 a and the drain electrode layer 405 b may be formed using a conductive metal oxide.
  • a conductive metal oxide indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), zinc oxide (ZnO), indium oxide-tin oxide alloy (In 2 O 3 —SnO 2 ; abbreviated to ITO), indium oxide-zinc oxide alloy (In 2 O 3 —ZnO), or any of these metal oxide materials in which silicon oxide is contained can be used.
  • an inorganic insulating film typically, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or an aluminum oxynitride film, can be used.
  • an inorganic insulating film such as a silicon nitride film, an aluminum nitride film, a silicon nitride oxide film, or an aluminum nitride oxide film can be used.
  • a planarization insulating film may be formed over the protective insulating layer 409 so that surface roughness due to the transistor can be reduced.
  • an organic material such as polyimide, acrylic, or benzocyclobutene can be used.
  • a low-dielectric constant material a low-k material
  • the planarization insulating film may be formed by stacking a plurality of insulating films formed from these materials.
  • a high-performance liquid crystal display device can be provided by using the transistor including the oxide semiconductor layer.

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120229805A1 (en) * 2011-03-08 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Defect evaluation method for semiconductor
US20130153892A1 (en) * 2011-12-20 2013-06-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP2014131024A (ja) * 2012-11-30 2014-07-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその評価方法
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
US20220173349A1 (en) * 2020-12-01 2022-06-02 Boe Technology Group Co., Ltd. Switching device structure and method for preparing same, thin film transistor film layer and display panel
US11379231B2 (en) 2019-10-25 2022-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing system and operation method of data processing system

Citations (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5731856A (en) * 1995-12-30 1998-03-24 Samsung Electronics Co., Ltd. Methods for forming liquid crystal displays including thin film transistors and gate pads having a particular structure
US5744864A (en) * 1995-08-03 1998-04-28 U.S. Philips Corporation Semiconductor device having a transparent switching element
US6294274B1 (en) * 1998-11-16 2001-09-25 Tdk Corporation Oxide thin film
US20010046027A1 (en) * 1999-09-03 2001-11-29 Ya-Hsiang Tai Liquid crystal display having stripe-shaped common electrodes formed above plate-shaped pixel electrodes
US20020056838A1 (en) * 2000-11-15 2002-05-16 Matsushita Electric Industrial Co., Ltd. Thin film transistor array, method of producing the same, and display panel using the same
US20020132454A1 (en) * 2001-03-19 2002-09-19 Fuji Xerox Co., Ltd. Method of forming crystalline semiconductor thin film on base substrate, lamination formed with crystalline semiconductor thin film and color filter
US6563174B2 (en) * 2001-09-10 2003-05-13 Sharp Kabushiki Kaisha Thin film transistor and matrix display device
US20030189401A1 (en) * 2002-03-26 2003-10-09 International Manufacturing And Engineering Services Co., Ltd. Organic electroluminescent device
US20030218222A1 (en) * 2002-05-21 2003-11-27 The State Of Oregon Acting And Through The Oregon State Board Of Higher Education On Behalf Of Transistor structures and methods for making the same
US20040038446A1 (en) * 2002-03-15 2004-02-26 Sanyo Electric Co., Ltd.- Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
US6727522B1 (en) * 1998-11-17 2004-04-27 Japan Science And Technology Corporation Transistor and semiconductor device
US20040127038A1 (en) * 2002-10-11 2004-07-01 Carcia Peter Francis Transparent oxide semiconductor thin film transistors
US20050017302A1 (en) * 2003-07-25 2005-01-27 Randy Hoffman Transistor including a deposited channel region having a doped portion
US20050199959A1 (en) * 2004-03-12 2005-09-15 Chiang Hai Q. Semiconductor device
US20060043377A1 (en) * 2004-03-12 2006-03-02 Hewlett-Packard Development Company, L.P. Semiconductor device
US20060091793A1 (en) * 2004-11-02 2006-05-04 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US20060108529A1 (en) * 2004-11-10 2006-05-25 Canon Kabushiki Kaisha Sensor and image pickup device
US20060108636A1 (en) * 2004-11-10 2006-05-25 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US20060110867A1 (en) * 2004-11-10 2006-05-25 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US20060113549A1 (en) * 2004-11-10 2006-06-01 Canon Kabushiki Kaisha Light-emitting device
US20060113539A1 (en) * 2004-11-10 2006-06-01 Canon Kabushiki Kaisha Field effect transistor
US20060113565A1 (en) * 2004-11-10 2006-06-01 Canon Kabushiki Kaisha Electric elements and circuits utilizing amorphous oxides
US20060113536A1 (en) * 2004-11-10 2006-06-01 Canon Kabushiki Kaisha Display
US7061014B2 (en) * 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
US20060169973A1 (en) * 2005-01-28 2006-08-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and method of manufacturing semiconductor device
US20060170111A1 (en) * 2005-01-28 2006-08-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and method of manufacturing semiconductor device
US20060197092A1 (en) * 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US7105868B2 (en) * 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US20060208977A1 (en) * 2005-03-18 2006-09-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US20060228974A1 (en) * 2005-03-31 2006-10-12 Theiss Steven D Methods of making displays
US20060231882A1 (en) * 2005-03-28 2006-10-19 Il-Doo Kim Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US20060238135A1 (en) * 2005-04-20 2006-10-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US20060244107A1 (en) * 2003-06-20 2006-11-02 Toshinori Sugihara Semiconductor device, manufacturing method, and electronic device
US20060284171A1 (en) * 2005-06-16 2006-12-21 Levy David H Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US20060284172A1 (en) * 2005-06-10 2006-12-21 Casio Computer Co., Ltd. Thin film transistor having oxide semiconductor layer and manufacturing method thereof
US20060292777A1 (en) * 2005-06-27 2006-12-28 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
US20070024187A1 (en) * 2005-07-28 2007-02-01 Shin Hyun S Organic light emitting display (OLED) and its method of fabrication
US20070046191A1 (en) * 2005-08-23 2007-03-01 Canon Kabushiki Kaisha Organic electroluminescent display device and manufacturing method thereof
US20070054507A1 (en) * 2005-09-06 2007-03-08 Canon Kabushiki Kaisha Method of fabricating oxide semiconductor device
US20070052025A1 (en) * 2005-09-06 2007-03-08 Canon Kabushiki Kaisha Oxide semiconductor thin film transistor and method of manufacturing the same
US20070063211A1 (en) * 2005-09-06 2007-03-22 Canon Kabushiki Kaisha Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
US20070090365A1 (en) * 2005-10-20 2007-04-26 Canon Kabushiki Kaisha Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
US20070108446A1 (en) * 2005-11-15 2007-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20070152217A1 (en) * 2005-12-29 2007-07-05 Chih-Ming Lai Pixel structure of active matrix organic light-emitting diode and method for fabricating the same
US20070172591A1 (en) * 2006-01-21 2007-07-26 Samsung Electronics Co., Ltd. METHOD OF FABRICATING ZnO FILM AND THIN FILM TRANSISTOR ADOPTING THE ZnO FILM
US20070187678A1 (en) * 2006-02-15 2007-08-16 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
US20070187760A1 (en) * 2006-02-02 2007-08-16 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US20070194379A1 (en) * 2004-03-12 2007-08-23 Japan Science And Technology Agency Amorphous Oxide And Thin Film Transistor
US20070252928A1 (en) * 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
US7297977B2 (en) * 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US20070272922A1 (en) * 2006-04-11 2007-11-29 Samsung Electronics Co. Ltd. ZnO thin film transistor and method of forming the same
US20070287296A1 (en) * 2006-06-13 2007-12-13 Canon Kabushiki Kaisha Dry etching method for oxide semiconductor film
US20080006877A1 (en) * 2004-09-17 2008-01-10 Peter Mardilovich Method of Forming a Solution Processed Device
US7323356B2 (en) * 2002-02-21 2008-01-29 Japan Science And Technology Agency LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film
US20080038929A1 (en) * 2006-08-09 2008-02-14 Canon Kabushiki Kaisha Method of dry etching oxide semiconductor film
US20080038882A1 (en) * 2006-08-09 2008-02-14 Kazushige Takechi Thin-film device and method of fabricating the same
US20080050595A1 (en) * 2006-01-11 2008-02-28 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
US20080073653A1 (en) * 2006-09-27 2008-03-27 Canon Kabushiki Kaisha Semiconductor apparatus and method of manufacturing the same
US20080083950A1 (en) * 2006-10-10 2008-04-10 Alfred I-Tsung Pan Fused nanocrystal thin film semiconductor and method
US20080106191A1 (en) * 2006-09-27 2008-05-08 Seiko Epson Corporation Electronic device, organic electroluminescence device, and organic thin film semiconductor device
US20080129195A1 (en) * 2006-12-04 2008-06-05 Toppan Printing Co., Ltd. Color el display and method for producing the same
US20080128689A1 (en) * 2006-11-29 2008-06-05 Je-Hun Lee Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
US7385224B2 (en) * 2004-09-02 2008-06-10 Casio Computer Co., Ltd. Thin film transistor having an etching protection film and manufacturing method thereof
US20080166834A1 (en) * 2007-01-05 2008-07-10 Samsung Electronics Co., Ltd. Thin film etching method
US7402506B2 (en) * 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US20080182358A1 (en) * 2007-01-26 2008-07-31 Cowdery-Corvan Peter J Process for atomic layer deposition
US7411209B2 (en) * 2006-09-15 2008-08-12 Canon Kabushiki Kaisha Field-effect transistor and method for manufacturing the same
US20080224133A1 (en) * 2007-03-14 2008-09-18 Jin-Seong Park Thin film transistor and organic light-emitting display device having the thin film transistor
US20080258141A1 (en) * 2007-04-19 2008-10-23 Samsung Electronics Co., Ltd. Thin film transistor, method of manufacturing the same, and flat panel display having the same
US20080258143A1 (en) * 2007-04-18 2008-10-23 Samsung Electronics Co., Ltd. Thin film transitor substrate and method of manufacturing the same
US20080258139A1 (en) * 2007-04-17 2008-10-23 Toppan Printing Co., Ltd. Structure with transistor
US20080258140A1 (en) * 2007-04-20 2008-10-23 Samsung Electronics Co., Ltd. Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor
US20080296568A1 (en) * 2007-05-29 2008-12-04 Samsung Electronics Co., Ltd Thin film transistors and methods of manufacturing the same
US7501293B2 (en) * 2002-06-13 2009-03-10 Murata Manufacturing Co., Ltd. Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device
US20090073325A1 (en) * 2005-01-21 2009-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same, and electric device
US20090114910A1 (en) * 2005-09-06 2009-05-07 Canon Kabushiki Kaisha Semiconductor device
US20090134399A1 (en) * 2005-02-18 2009-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Method for Manufacturing the Same
US20090152506A1 (en) * 2007-12-17 2009-06-18 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
US20090152541A1 (en) * 2005-02-03 2009-06-18 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7674650B2 (en) * 2005-09-29 2010-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100065844A1 (en) * 2008-09-18 2010-03-18 Sony Corporation Thin film transistor and method of manufacturing thin film transistor
US20100092800A1 (en) * 2008-10-09 2010-04-15 Canon Kabushiki Kaisha Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device
US20100109002A1 (en) * 2007-04-25 2010-05-06 Canon Kabushiki Kaisha Oxynitride semiconductor

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP5126729B2 (ja) 2004-11-10 2013-01-23 キヤノン株式会社 画像表示装置
JP4560502B2 (ja) 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP2007311404A (ja) 2006-05-16 2007-11-29 Fuji Electric Holdings Co Ltd 薄膜トランジスタの製造方法
TWI478347B (zh) 2007-02-09 2015-03-21 Idemitsu Kosan Co A thin film transistor, a thin film transistor substrate, and an image display device, and an image display device, and a semiconductor device
JP5244331B2 (ja) 2007-03-26 2013-07-24 出光興産株式会社 非晶質酸化物半導体薄膜、その製造方法、薄膜トランジスタの製造方法、電界効果型トランジスタ、発光装置、表示装置及びスパッタリングターゲット
JP5197058B2 (ja) * 2007-04-09 2013-05-15 キヤノン株式会社 発光装置とその作製方法
JP2009099847A (ja) 2007-10-18 2009-05-07 Canon Inc 薄膜トランジスタとその製造方法及び表示装置
JP2010118556A (ja) * 2008-11-13 2010-05-27 Furukawa Electric Co Ltd:The 半導体装置および半導体装置の製造方法
WO2011002046A1 (en) * 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

Patent Citations (97)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5744864A (en) * 1995-08-03 1998-04-28 U.S. Philips Corporation Semiconductor device having a transparent switching element
US5731856A (en) * 1995-12-30 1998-03-24 Samsung Electronics Co., Ltd. Methods for forming liquid crystal displays including thin film transistors and gate pads having a particular structure
US6294274B1 (en) * 1998-11-16 2001-09-25 Tdk Corporation Oxide thin film
US6727522B1 (en) * 1998-11-17 2004-04-27 Japan Science And Technology Corporation Transistor and semiconductor device
US7064346B2 (en) * 1998-11-17 2006-06-20 Japan Science And Technology Agency Transistor and semiconductor device
US20010046027A1 (en) * 1999-09-03 2001-11-29 Ya-Hsiang Tai Liquid crystal display having stripe-shaped common electrodes formed above plate-shaped pixel electrodes
US20020056838A1 (en) * 2000-11-15 2002-05-16 Matsushita Electric Industrial Co., Ltd. Thin film transistor array, method of producing the same, and display panel using the same
US20020132454A1 (en) * 2001-03-19 2002-09-19 Fuji Xerox Co., Ltd. Method of forming crystalline semiconductor thin film on base substrate, lamination formed with crystalline semiconductor thin film and color filter
US6563174B2 (en) * 2001-09-10 2003-05-13 Sharp Kabushiki Kaisha Thin film transistor and matrix display device
US7061014B2 (en) * 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
US7323356B2 (en) * 2002-02-21 2008-01-29 Japan Science And Technology Agency LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film
US7049190B2 (en) * 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
US20040038446A1 (en) * 2002-03-15 2004-02-26 Sanyo Electric Co., Ltd.- Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
US20030189401A1 (en) * 2002-03-26 2003-10-09 International Manufacturing And Engineering Services Co., Ltd. Organic electroluminescent device
US20030218222A1 (en) * 2002-05-21 2003-11-27 The State Of Oregon Acting And Through The Oregon State Board Of Higher Education On Behalf Of Transistor structures and methods for making the same
US7501293B2 (en) * 2002-06-13 2009-03-10 Murata Manufacturing Co., Ltd. Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device
US7105868B2 (en) * 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US20040127038A1 (en) * 2002-10-11 2004-07-01 Carcia Peter Francis Transparent oxide semiconductor thin film transistors
US20060035452A1 (en) * 2002-10-11 2006-02-16 Carcia Peter F Transparent oxide semiconductor thin film transistor
US20060244107A1 (en) * 2003-06-20 2006-11-02 Toshinori Sugihara Semiconductor device, manufacturing method, and electronic device
US20050017302A1 (en) * 2003-07-25 2005-01-27 Randy Hoffman Transistor including a deposited channel region having a doped portion
US20080254569A1 (en) * 2004-03-12 2008-10-16 Hoffman Randy L Semiconductor Device
US20090280600A1 (en) * 2004-03-12 2009-11-12 Japan Science And Technology Agency Amorphous oxide and thin film transistor
US7297977B2 (en) * 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7462862B2 (en) * 2004-03-12 2008-12-09 Hewlett-Packard Development Company, L.P. Transistor using an isovalent semiconductor oxide as the active channel layer
US20090278122A1 (en) * 2004-03-12 2009-11-12 Japan Science And Technology Agency Amorphous oxide and thin film transistor
US7282782B2 (en) * 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US20070194379A1 (en) * 2004-03-12 2007-08-23 Japan Science And Technology Agency Amorphous Oxide And Thin Film Transistor
US20060043377A1 (en) * 2004-03-12 2006-03-02 Hewlett-Packard Development Company, L.P. Semiconductor device
US20050199959A1 (en) * 2004-03-12 2005-09-15 Chiang Hai Q. Semiconductor device
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
US7385224B2 (en) * 2004-09-02 2008-06-10 Casio Computer Co., Ltd. Thin film transistor having an etching protection film and manufacturing method thereof
US20080006877A1 (en) * 2004-09-17 2008-01-10 Peter Mardilovich Method of Forming a Solution Processed Device
US20060091793A1 (en) * 2004-11-02 2006-05-04 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US20060108529A1 (en) * 2004-11-10 2006-05-25 Canon Kabushiki Kaisha Sensor and image pickup device
US20060113539A1 (en) * 2004-11-10 2006-06-01 Canon Kabushiki Kaisha Field effect transistor
US20060113565A1 (en) * 2004-11-10 2006-06-01 Canon Kabushiki Kaisha Electric elements and circuits utilizing amorphous oxides
US20060113536A1 (en) * 2004-11-10 2006-06-01 Canon Kabushiki Kaisha Display
US20060113549A1 (en) * 2004-11-10 2006-06-01 Canon Kabushiki Kaisha Light-emitting device
US20060110867A1 (en) * 2004-11-10 2006-05-25 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7453065B2 (en) * 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US20060108636A1 (en) * 2004-11-10 2006-05-25 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US20090073325A1 (en) * 2005-01-21 2009-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same, and electric device
US20060170111A1 (en) * 2005-01-28 2006-08-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and method of manufacturing semiconductor device
US20060169973A1 (en) * 2005-01-28 2006-08-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and method of manufacturing semiconductor device
US20090152541A1 (en) * 2005-02-03 2009-06-18 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US20090134399A1 (en) * 2005-02-18 2009-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Method for Manufacturing the Same
US20060197092A1 (en) * 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US20060208977A1 (en) * 2005-03-18 2006-09-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US20060231882A1 (en) * 2005-03-28 2006-10-19 Il-Doo Kim Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US20060228974A1 (en) * 2005-03-31 2006-10-12 Theiss Steven D Methods of making displays
US20060238135A1 (en) * 2005-04-20 2006-10-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US20060284172A1 (en) * 2005-06-10 2006-12-21 Casio Computer Co., Ltd. Thin film transistor having oxide semiconductor layer and manufacturing method thereof
US7402506B2 (en) * 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US20060284171A1 (en) * 2005-06-16 2006-12-21 Levy David H Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US20060292777A1 (en) * 2005-06-27 2006-12-28 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
US20070024187A1 (en) * 2005-07-28 2007-02-01 Shin Hyun S Organic light emitting display (OLED) and its method of fabrication
US20070046191A1 (en) * 2005-08-23 2007-03-01 Canon Kabushiki Kaisha Organic electroluminescent display device and manufacturing method thereof
US20070063211A1 (en) * 2005-09-06 2007-03-22 Canon Kabushiki Kaisha Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
US20090114910A1 (en) * 2005-09-06 2009-05-07 Canon Kabushiki Kaisha Semiconductor device
US7468304B2 (en) * 2005-09-06 2008-12-23 Canon Kabushiki Kaisha Method of fabricating oxide semiconductor device
US7453087B2 (en) * 2005-09-06 2008-11-18 Canon Kabushiki Kaisha Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
US20070052025A1 (en) * 2005-09-06 2007-03-08 Canon Kabushiki Kaisha Oxide semiconductor thin film transistor and method of manufacturing the same
US20070054507A1 (en) * 2005-09-06 2007-03-08 Canon Kabushiki Kaisha Method of fabricating oxide semiconductor device
US7674650B2 (en) * 2005-09-29 2010-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7732819B2 (en) * 2005-09-29 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20070090365A1 (en) * 2005-10-20 2007-04-26 Canon Kabushiki Kaisha Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor
US20070108446A1 (en) * 2005-11-15 2007-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20090068773A1 (en) * 2005-12-29 2009-03-12 Industrial Technology Research Institute Method for fabricating pixel structure of active matrix organic light-emitting diode
US20070152217A1 (en) * 2005-12-29 2007-07-05 Chih-Ming Lai Pixel structure of active matrix organic light-emitting diode and method for fabricating the same
US20080050595A1 (en) * 2006-01-11 2008-02-28 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
US20070172591A1 (en) * 2006-01-21 2007-07-26 Samsung Electronics Co., Ltd. METHOD OF FABRICATING ZnO FILM AND THIN FILM TRANSISTOR ADOPTING THE ZnO FILM
US20070187760A1 (en) * 2006-02-02 2007-08-16 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US20070187678A1 (en) * 2006-02-15 2007-08-16 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
US20070272922A1 (en) * 2006-04-11 2007-11-29 Samsung Electronics Co. Ltd. ZnO thin film transistor and method of forming the same
US20070252928A1 (en) * 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
US20070287296A1 (en) * 2006-06-13 2007-12-13 Canon Kabushiki Kaisha Dry etching method for oxide semiconductor film
US20080038929A1 (en) * 2006-08-09 2008-02-14 Canon Kabushiki Kaisha Method of dry etching oxide semiconductor film
US20080038882A1 (en) * 2006-08-09 2008-02-14 Kazushige Takechi Thin-film device and method of fabricating the same
US7411209B2 (en) * 2006-09-15 2008-08-12 Canon Kabushiki Kaisha Field-effect transistor and method for manufacturing the same
US20080106191A1 (en) * 2006-09-27 2008-05-08 Seiko Epson Corporation Electronic device, organic electroluminescence device, and organic thin film semiconductor device
US20080073653A1 (en) * 2006-09-27 2008-03-27 Canon Kabushiki Kaisha Semiconductor apparatus and method of manufacturing the same
US20080083950A1 (en) * 2006-10-10 2008-04-10 Alfred I-Tsung Pan Fused nanocrystal thin film semiconductor and method
US20080128689A1 (en) * 2006-11-29 2008-06-05 Je-Hun Lee Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
US20080129195A1 (en) * 2006-12-04 2008-06-05 Toppan Printing Co., Ltd. Color el display and method for producing the same
US20080166834A1 (en) * 2007-01-05 2008-07-10 Samsung Electronics Co., Ltd. Thin film etching method
US20080182358A1 (en) * 2007-01-26 2008-07-31 Cowdery-Corvan Peter J Process for atomic layer deposition
US20080224133A1 (en) * 2007-03-14 2008-09-18 Jin-Seong Park Thin film transistor and organic light-emitting display device having the thin film transistor
US20080258139A1 (en) * 2007-04-17 2008-10-23 Toppan Printing Co., Ltd. Structure with transistor
US20080258143A1 (en) * 2007-04-18 2008-10-23 Samsung Electronics Co., Ltd. Thin film transitor substrate and method of manufacturing the same
US20080258141A1 (en) * 2007-04-19 2008-10-23 Samsung Electronics Co., Ltd. Thin film transistor, method of manufacturing the same, and flat panel display having the same
US20080258140A1 (en) * 2007-04-20 2008-10-23 Samsung Electronics Co., Ltd. Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor
US20100109002A1 (en) * 2007-04-25 2010-05-06 Canon Kabushiki Kaisha Oxynitride semiconductor
US20080296568A1 (en) * 2007-05-29 2008-12-04 Samsung Electronics Co., Ltd Thin film transistors and methods of manufacturing the same
US20090152506A1 (en) * 2007-12-17 2009-06-18 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
US20100065844A1 (en) * 2008-09-18 2010-03-18 Sony Corporation Thin film transistor and method of manufacturing thin film transistor
US20100092800A1 (en) * 2008-10-09 2010-04-15 Canon Kabushiki Kaisha Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device

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Publication number Priority date Publication date Assignee Title
US20120229805A1 (en) * 2011-03-08 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Defect evaluation method for semiconductor
US8625085B2 (en) * 2011-03-08 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Defect evaluation method for semiconductor
US20130153892A1 (en) * 2011-12-20 2013-06-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9070778B2 (en) * 2011-12-20 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI570925B (zh) * 2011-12-20 2017-02-11 半導體能源研究所股份有限公司 半導體裝置以及半導體裝置的製造方法
JP2014131024A (ja) * 2012-11-30 2014-07-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその評価方法
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
US9972389B2 (en) 2015-01-23 2018-05-15 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
US11379231B2 (en) 2019-10-25 2022-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing system and operation method of data processing system
US12014175B2 (en) 2019-10-25 2024-06-18 Semiconductor Energy Laboratory Co., Ltd. Data processing system and operation method of data processing system
US20220173349A1 (en) * 2020-12-01 2022-06-02 Boe Technology Group Co., Ltd. Switching device structure and method for preparing same, thin film transistor film layer and display panel

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