US20110186889A1 - Light emitting device, method of manufacturing the same, light emitting device package and lighting system - Google Patents

Light emitting device, method of manufacturing the same, light emitting device package and lighting system Download PDF

Info

Publication number
US20110186889A1
US20110186889A1 US12/899,926 US89992610A US2011186889A1 US 20110186889 A1 US20110186889 A1 US 20110186889A1 US 89992610 A US89992610 A US 89992610A US 2011186889 A1 US2011186889 A1 US 2011186889A1
Authority
US
United States
Prior art keywords
layer
light emitting
semiconductor layer
conductivity type
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/899,926
Other languages
English (en)
Inventor
Dae Sung Kang
Jung Min Won
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Assigned to LG INNOTEK, CO., LTD. reassignment LG INNOTEK, CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KANG, DAE SUNG, WON, JUNG MIN
Publication of US20110186889A1 publication Critical patent/US20110186889A1/en
Priority to US14/336,756 priority Critical patent/US9484496B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Definitions

  • One or more embodiments disclosed herein relate to the emission of light.
  • a light emitting diode is a semiconductor device that converts an electrical signal into light. These devices typically have a stack structure which includes a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type. Because of their size, LEDs have proven desirable for many applications. However, improvements are still needed.
  • FIGS. 1 to 4 are sectional diagrams showing a first embodiment of a light emitting device and a various stages of its manufacture.
  • FIGS. 5 to 7 are sectional diagrams showing a second embodiment of a light emitting device and various stages of its manufacture.
  • FIGS. 8 to 11 are sectional diagrams showing a third embodiment of a light emitting device and various stages of its manufacture.
  • FIGS. 12 to 15 are sectional diagrams showing a fourth embodiment of a light emitting device and various stages of its manufacture.
  • FIG. 16 is a diagram showing a mask layer and protrusions.
  • FIG. 17 is a diagram showing the same or another mask layer.
  • FIG. 18 is a diagram showing one embodiment of a light emitting device package that may include any of the aforementioned embodiments of the light emitting device.
  • FIG. 19 is a diagram showing one embodiment of a backlight unit that may include any of the aforementioned embodiments of the light emitting device or package.
  • FIG. 20 is a diagram showing one embodiment of a lighting unit that may include any of the aforementioned embodiments of the light emitting device or package.
  • FIGS. 1 to 4 show one embodiment of a light emitting device and various stages of its manufacture.
  • the light emitting device includes a light emitting structure layer 60 formed from a semiconductor layer 30 of a first conductivity type, an active layer 40 and a semiconductor layer 50 of a second conductivity type, all of which are supported by a growth substrate 10 .
  • the LED further includes a first electrode 70 formed on the first conductivity type semiconductor layer 30 , and a second electrode 80 formed on the second conductivity type semiconductor layer 50 .
  • a plurality of protrusions 11 are formed on the growth substrate 10 .
  • the protrusions 11 may be in a semi-spherical shape or another shape, and in terms of materials may be formed, for example, from one or more of SiO 2 , SiN, GaO, ZnO, or ITO.
  • the protrusions 11 may serve to enhance the light extraction efficiency of the light emitting device by allowing light emitted from the active layer 40 to be scattered.
  • the protrusions 11 may provided in various numbers and/or shapes in addition to those shown in FIG. 4 .
  • the semiconductor layers on the growth substrate 10 include a first semiconductor layer, a second semiconductor layer, and the active layer between the first semiconductor layer and the second semiconductor layer.
  • the first semiconductor layer is implemented by the first conductivity type semiconductor layer 30 and the second semiconductor layer is implemented by the second conductivity type semiconductor layer 50 .
  • the first conductivity type semiconductor layer 30 is formed with a stepped portion 31 at a lower edge surface thereof.
  • the stepped portion 31 may be formed by extending the lower edge surfaces of the first conductivity type semiconductor layer 30 . Some portions of the first conductivity type semiconductor layer 30 are spaced apart from the growth substrate 10 . Also, in one embodiment, at least a portion of the stepped portion 31 and the protrusions 11 may be disposed on the same plane.
  • the first conductivity type semiconductor layer 30 includes a first surface contacting the active layer 40 and a second surface oppositely facing the first surface.
  • the area of the second surface may be smaller than a maximum area of the first conductivity type semiconductor layer due to the stepped portion 31 .
  • FIG. 4 One embodiment of a method for manufacturing the light emitting device shown in FIG. 4 will now be discussed with reference to FIGS. 1 to 4 .
  • a growth substrate 10 is prepared and a plurality of protrusions 11 and a mask layer 12 are formed on the growth substrate 10 .
  • the growth substrate 10 may be formed, for example, of one or more of sapphire (Al 2 O 3 ), SiC, Si, GaAs, ZnO, MgO, GaN, Glass or Ga 2 O 3 .
  • the mask layer 12 may be formed of the same material as that of the protrusions 11 , e.g., SiO 2 , SiN, GaO, ZnO, or ITO.
  • FIG. 16 shows an example of a plane view of mask layer 12 and protrusions 11 .
  • the mask layer 12 may be formed so that the growth substrate 10 is exposed so that the light emitting structure layer 60 may be grown. That is, a plurality of light emitting structure layer growth regions A may be defined by the mask layer 12 .
  • the light emitting structure layer 60 may not be grown on the mask layer 12 , and in such a case the light emitting structure layer 60 on the light emitting structure layer growth regions A may be grown so that they are separated from each other by the mask layer 12 .
  • the protrusions may be partially formed on the light emitting structure layer growth regions A of the growth substrate 10 where the mask layer 12 is not formed.
  • FIG. 17 shows another view of mask layer 12 .
  • the mask layer 12 formed on the growth substrate 10 and the light emitting structure layer growth regions A are defined by mask layer 12 .
  • the protrusions 11 are not formed on the growth substrate 10 , but a protrusion pattern 12 a may be formed on a side surface of the mask layer 12 .
  • This or another protrusion pattern corresponding to protrusion pattern 12 a may be formed on a side surface of the first conductivity type semiconductor layer 30 grown on the light emitting structure layer growth regions A.
  • a light emitting structure layer 60 including the first conductivity type semiconductor layer 30 , an active layer 40 and a second conductivity type semiconductor layer 50 , is grown on the growth substrate 10 on which the mask layer 12 and the protrusions 11 are formed.
  • the first conductivity type semiconductor layer 30 is grown on the growth substrate 10 to cover the protrusions 11 through a horizontal growth and a vertical growth and to partially cover the mask layer 12 .
  • the mask layer 12 allows the light emitting structure layer 60 to be grown in multiple chip units on a substrate, for example, by dividing the growth substrate 10 into a plurality of light emitting structure layer growth regions A on which the light emitting structure 60 is grown. Thus, instead of scribing the substrate into individual chip units first (that is, right after formation of the light emitting structure layer), the light emitting structure layer is grown into multiple chip units on a single substrate.
  • the crystallinity of a cleavage surface may not be good. As a result, leakage current may flow into the cleavage surface.
  • the resulting light emitting structure layer 60 is grown into a high quality thin layer having improved properties in terms of crystallinity of the side surface.
  • the first conductivity type semiconductor layer 30 may be grown, for example, as or into a GaN-based semiconductor layer including an n-type impurity such as silicon (Si), and the second conductivity type semiconductor layer 50 may be grown as or into a GaN-based semiconductor layer including a p-type impurity such as Mg.
  • the active layer 40 may be formed of InGaN layer/GaN layer having a single quantum well structure or multi-quantum well structure by supplying ammonia (NH 3 ), trimethylgallium (TMGa), and trimethylindium (TMIn).
  • NH 3 ammonia
  • TMGa trimethylgallium
  • TMIn trimethylindium
  • a mesa etching step for partially removing the second conductivity type semiconductor layer 50 , the active layer 40 and the first conductivity type semiconductor layer 30 is performed.
  • mesa etching some of the first conductivity type semiconductor layer 30 is exposed in an upward direction.
  • a first electrode 70 is formed on the first conductivity type semiconductor layer 30
  • a second electrode 80 is formed on the second conductivity type semiconductor layer 50 .
  • the growth substrate 10 and the mask layer 12 are cut to divide the growth substrate 10 and the light emitting structure layer 60 into chip units.
  • the growth substrate 10 may be cut by a scribing method or breaking method, and the mask layer 12 may be removed by an etching method.
  • the mask layer 12 may be partially or completely removed.
  • the stepped portion 31 is formed at a lower edge region of the first conductivity type semiconductor layer 30 .
  • a protrusion pattern may be formed on a side surface of the first conductivity type semiconductor layer.
  • FIGS. 5 to 7 show a second embodiment of a light emitting device and various stages of its manufacture.
  • the second embodiment of the light emitting device includes an undoped nitride layer 20 is formed on a growth substrate 10 and a light emitting structure layer 60 formed on the undoped nitride layer.
  • the light emitting structure layer includes a first conductivity type semiconductor layer 30 , an active layer 40 , and a second conductivity type semiconductor layer 50 .
  • the LED includes a first electrode 70 formed on the first conductivity type semiconductor layer 30 , and a second electrode 80 formed on the second conductivity type semiconductor layer 50 .
  • a plurality of protrusions 11 are formed on the growth substrate 10 .
  • the protrusions 11 may be in a semi-spherical shape or another shape, and may be formed, for example, of one or more of SiO 2 , SiN, GaO, ZnO, or ITO.
  • the protrusions 11 may serve to enhance the light extraction efficiency of the light emitting device by allowing light emitted from the active layer 40 to be scattered.
  • the protrusions 11 may be provided in various numbers and/or shapes in addition to those shown.
  • the semiconductor layers on the growth substrate 10 include a first semiconductor layer, a second semiconductor layer, and the active layer between the first semiconductor layer and the second semiconductor layer.
  • the first semiconductor layer includes the undoped nitride layer 20 and the first conductivity type semiconductor layer 30
  • the second semiconductor layer is includes the second conductivity type semiconductor layer 50 .
  • the undoped nitride layer 20 is formed with a stepped portion 21 at one or more lower edge surfaces thereof. Some portions of the undoped nitride layer 20 may be spaced apart from the growth substrate 10 . Also, at least a portion of the stepped portion 21 and the protrusions 11 may be disposed on the same plane.
  • the undoped nitride layer 20 may include a first surface contacting the first conductivity type semiconductor layer 30 and a second surface oppositely facing the first surface, and the area of the second surface may be smaller than a maximum area of the first conductivity type semiconductor layer due to the stepped portion 21 .
  • a growth substrate 10 is prepared and a plurality of protrusions 11 and a mask layer 12 are formed on the growth substrate 10 .
  • the growth substrate 10 may be formed, for example, from one or more of sapphire (Al 2 O 3 ), SiC, Si, GaAs, ZnO, MgO, GaN, Glass or Ga 2 O 3 .
  • the mask layer 12 may be formed of the same material as the protrusions 11 and may be, for example, formed from one or more of SiO 2 , SiN, GaO, ZnO, or ITO.
  • An undoped nitride layer 20 is grown on the growth substrate 10 on which the mask layer 12 and the protrusions 11 are formed.
  • a light emitting structure layer 60 including a first conductivity type semiconductor layer 30 , an active layer 40 and a second conductivity type semiconductor layer 50 is grown on the undoped nitride layer 20 .
  • the undoped nitride layer 20 is grown on the growth substrate 10 to cover the mask layer 12 and the protrusions 11 through a horizontal growth and a vertical growth.
  • the undoped nitride layer 20 may not intentionally doped with a first conductivity type impurity, the undoped nitride layer 20 is a nitride layer which may have the first conductivity type conductivity, and may be, for example, formed of Un-GaN layer.
  • the first conductivity type semiconductor layer 30 may be formed, for example, of a GaN-based semiconductor layer including an n-type impurity such as silicon (Si), and the second conductivity type semiconductor layer 50 may be formed of a GaN-based semiconductor layer including a p-type impurity such as Mg.
  • the active layer 40 may be formed of InGaN layer/GaN layer having a single quantum well structure or multi-quantum well structure by supplying ammonia (NH 3 ), trimethylgallium (TMGa), and trimethylindium (TMIn).
  • NH 3 ammonia
  • TMGa trimethylgallium
  • TMIn trimethylindium
  • the result of a mesa etching technique is shown for partially removing the second conductivity type semiconductor layer 50 , the active layer 40 , and the first conductivity type semiconductor layer 30 .
  • mesa etching some of the first conductivity type semiconductor layer 30 is exposed in an upward direction.
  • a first electrode 70 is formed on the first conductivity type semiconductor layer 30 and a second electrode 80 is formed on the second conductivity type semiconductor layer 50 .
  • the growth substrate 10 and the mask layer 12 are cut to divide the growth substrate 10 and the light emitting structure layer 60 into chip units.
  • the growth substrate 10 may be cut by a scribing method or a breaking method, and the mask layer 12 may be removed by an etching method. At this time, the mask layer 12 may be completely or partially removed.
  • the stepped portion 21 is formed at a lower edge region of the undoped nitride layer 20 .
  • a protrusion pattern may be formed on a side surface of the undoped nitride layer where the stepped portion 21 is formed.
  • FIGS. 8 to 11 show a third embodiment of a light emitting device and various stages of its manufacture.
  • the light emitting device includes a light emitting structure layer 60 formed from a first conductivity type semiconductor layer 30 , an active layer 40 , and a second conductivity type semiconductor layer 50 .
  • a first electrode 70 is formed on the first conductivity type semiconductor layer 30 and a second electrode 110 is formed under the second conductivity type semiconductor layer 50 .
  • the second electrode 110 includes an ohmic contact layer 111 under the second conductivity type semiconductor layer 50 , a reflective layer 112 under the ohmic contact layer 111 , and a conductivity supporting substrate 113 under the reflective layer 112 .
  • the semiconductor layers on the second electrode 110 include a first semiconductor layer, a second semiconductor layer, and the active layer between the first semiconductor layer and the second semiconductor layer.
  • the first semiconductor layer is implemented by the first conductivity type semiconductor layer 30
  • the second semiconductor layer is implemented by the second conductivity type semiconductor layer 50 .
  • the first conductivity type semiconductor layer 30 is formed with a stepped portion 31 at an upper side surface thereof and with upper grooves 32 at an upper surface thereof.
  • the upper grooves 32 may act as photonic crystals which allow the light emitted from the active layer 40 to be effectively extracted to an outside.
  • the first conductivity type semiconductor layer 30 includes a first surface contacting the active layer 40 and a second surface oppositely facing the first surface.
  • the area of the second surface may be smaller than a maximum area of the first conductivity type semiconductor layer due to the stepped portion 31 .
  • a growth substrate 10 is prepared and a plurality of protrusions 11 and a mask layer 12 are formed on the growth substrate 10 .
  • the growth substrate 10 may be formed, for example, from one or more of sapphire (Al 2 O 3 ), SiC, Si, GaAs, ZnO, MgO, GaN, Glass or Ga 2 O 3 , and mask layer 12 may be formed of the same material as protrusions 11 , e.g., one or more of SiO 2 , SiN, GaO, ZnO, or ITO.
  • a light emitting structure layer 60 including a first conductivity type semiconductor layer 30 , an active layer 40 , and a second conductivity type semiconductor layer 50 , is grown on the growth substrate 10 on which the mask layer 12 and the protrusions 11 are formed.
  • the first conductivity type semiconductor layer 30 is grown on the growth substrate 10 to cover the mask layer 12 and the protrusions 11 through a horizontal growth and a vertical growth.
  • the first conductivity type semiconductor layer 30 may be formed, for example, from a GaN-based semiconductor layer including an n-type impurity such as silicon (Si), and the second conductivity type semiconductor layer 50 may be formed, for example, from a GaN-based semiconductor layer including a p-type impurity such as Mg.
  • the active layer 40 may be formed of InGaN layer/GaN layer having a single quantum well structure or multi-quantum well structure by supplying ammonia (NH 3 ), trimethylgallium (TMGa), and trimethylindium (TMIn).
  • NH 3 ammonia
  • TMGa trimethylgallium
  • TMIn trimethylindium
  • a protective layer 90 is formed between the light emitting structure layer 60 and light emitting structure layer 60 .
  • the protective layer 90 may be formed of a material such as polyimide or SOG or another material.
  • a second electrode 110 is formed on the light emitting structure layer 60 and the protective layer 90 .
  • the second electrode layer 110 may be formed by first forming an ohmic contact layer 111 , forming a reflective layer 112 on the ohmic contact layer 111 , and forming a conductivity supporting substrate 113 on the reflective layer 112 .
  • the conductivity supporting substrate 113 may be formed to include, for example, at least one of copper (Cu), titanium (Ti), molybdenum (Mo), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), or conductivity semiconductor material.
  • the reflective layer 112 may be formed from a metal including, for example, at least one of silver (Ag), aluminum (Al), copper (Cu), or nickel (Ni) having a high reflectivity.
  • the ohmic contact layer 111 may be formed of a transparent conductivity oxide, such as indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), indium zinc oxide (IZO), antimony tin oxide (ATO), or zinc indium tin oxide (ZITO).
  • ITO indium tin oxide
  • AZO aluminum-doped zinc oxide
  • IZO indium zinc oxide
  • ATO antimony tin oxide
  • ZITO zinc indium tin oxide
  • the growth substrate 10 , mask layer 12 , protective layer 90 , and protrusions 11 are removed.
  • the growth substrate 10 may be removed using, for example, a laser lift-off method or a chemical lift-off method. Since the mask layer 12 and the protrusions 11 are disposed between the growth substrate 10 and the light emitting structure layer 60 , the growth substrate 10 can be easily separated from the light emitting structure layer 60 . That is, because the mask layer 12 and the protrusions 11 are not strongly bonded to the light emitting structure layer 60 , the more wide the area of the mask layer 12 and the protrusions 11 , the easier the separation of the growth substrate 10 .
  • the protrusions 11 and the mask layer 12 can be easily separated, and the protective layer 90 can be removed by using an etchant.
  • the protrusions 11 and the mask layer 12 are removed, upper grooves 32 and stepped portions 31 are formed in the first conductivity type semiconductor layer 30 .
  • a first electrode 70 is formed on the first conductivity type semiconductor layer 30 and then the second electrode 110 is separated.
  • FIGS. 12 to 15 show a fourth embodiment of a light emitting device and various stages of its manufacture.
  • the light emitting device includes a light emitting structure layer 60 formed from a first conductivity type semiconductor layer 30 , an active layer 40 , and a second conductivity type semiconductor layer 50 is formed, and an undoped nitride layer 20 is formed on the first conductivity type semiconductor layer 30 .
  • a first electrode 70 is formed on the first conductivity type semiconductor layer 30 exposed by selectively removing the undoped nitride layer 20 , and a second electrode 80 is formed under the second conductivity type semiconductor layer 50 .
  • the semiconductor layers on the second electrode 110 include a first semiconductor layer, a second semiconductor layer, and the active layer between the first semiconductor layer and the second semiconductor layer.
  • the first semiconductor layer is implemented by the undoped nitride layer 20 and the first conductivity type semiconductor layer 30
  • the second semiconductor layer is implemented by the second conductivity type semiconductor layer 50 .
  • the undoped nitride layer 20 is formed with a stepped portion 21 at an upper side surface thereof and with upper grooves 22 at an upper surface thereof.
  • the upper grooves 22 may act as photonic crystals, which allow the light emitted from the active layer 40 to be effectively extracted to an outside.
  • the undoped layer may be formed from a material other than an nitride, and the same is true of the undoped layer in the third and other embodiments described herein.
  • the undoped nitride layer 20 includes a first surface contacting the first conductivity type semiconductor layer 30 and a second surface oppositely facing the first surface.
  • the area of the second surface may be smaller than a maximum area of the first conductivity type semiconductor layer due to the stepped portion 21 .
  • a growth substrate 10 is prepared and a plurality of protrusions 11 and a mask layer 12 are formed on the growth substrate 10 .
  • the growth substrate 10 may be formed, for example, from one or more of sapphire (Al 2 O 3 ), SiC, Si, GaAs, ZnO, MgO, GaN, Glass or Ga 2 O 3 .
  • the mask layer 12 may be formed of the same material as that of the protrusions 11 and may be, for example, formed of one or more of SiO 2 , SiN, GaO, ZnO, or ITO.
  • the undoped nitride layer 20 is grown on the growth substrate 10 on which the mask layer 12 and the protrusions 11 are formed.
  • a light emitting structure layer 60 including a first conductivity type semiconductor layer 30 , an active layer 40 , and a second conductivity type semiconductor layer 50 , is grown on the undoped nitride layer 20 .
  • the undoped nitride layer 20 is grown on the growth substrate 10 to cover the mask layer 12 and the protrusions 11 through a horizontal growth and a vertical growth.
  • the first conductivity type semiconductor layer 30 may be formed, for example, from a GaN-based semiconductor layer including an n-type impurity such as silicon (Si), and the second conductivity type semiconductor layer 50 may be formed, for example, from a GaN-based semiconductor layer including a p-type impurity such as Mg.
  • the active layer 40 may be formed of InGaN layer/GaN layer having a single quantum well structure or multi-quantum well structure by supplying ammonia (NH 3 ), trimethylgallium (TMGa), and trimethylindium (TMIn).
  • NH 3 ammonia
  • TMGa trimethylgallium
  • TMIn trimethylindium
  • a protective layer 90 may be formed between the light emitting structure layer 60 and the light emitting structure layer 60 .
  • the protective layer 90 may be formed of a material such as polyimide or SOG or another material.
  • a second electrode 110 is formed on the light emitting structure layer 60 and the protective layer 90 .
  • the second electrode layer 110 may be formed by first forming an ohmic contact layer 111 , forming a reflective layer 112 on the ohmic contact layer 111 , and forming a conductivity supporting substrate 113 on the reflective layer 112 .
  • the conductivity supporting substrate 113 may be formed to include at least one of copper (Cu), titanium (Ti), molybdenum (Mo), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), or conductivity semiconductor material.
  • the reflective layer 112 may be formed to include a metal corresponding to at least one of silver (Ag), aluminum (Al), copper (Cu), or nickel (Ni) having a high reflectivity.
  • the ohmic contact layer 111 may be formed of a transparent conductivity oxide, such as indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), indium zinc oxide (IZO), antimony tin oxide (ATO), or zinc indium tin oxide (ZITO).
  • ITO indium tin oxide
  • AZO aluminum-doped zinc oxide
  • IZO indium zinc oxide
  • ATO antimony tin oxide
  • ZITO zinc indium tin oxide
  • the growth substrate 10 , mask layer 12 , protective layer 90 , and protrusions 11 are removed.
  • the growth substrate 10 may be removed using, for example, a laser lift-off method or a chemical lift-off method. Since the mask layer 12 and the protrusions 11 are disposed between the growth substrate 10 and the undoped nitride layer 20 , the growth substrate 10 can be easily separated from the undoped nitride layer 20 . That is, since the mask layer 12 and the protrusions 11 are not strongly bonded to the undoped nitride layer 20 , the more wide the area of the mask layer 12 and the protrusions 11 , the easier the separation of the growth substrate 10 .
  • the protrusions 11 and the mask layer 12 can be easily separated and the protective layer 90 can be removed by using an etchant. Accordingly upper grooves 32 and stepped portions 31 are formed in the undoped nitride layer 20 .
  • the undoped nitride layer 20 is selectively removed to expose the first conductivity type semiconductor layer 30 , and a first electrode 70 is formed on the first conductivity type semiconductor layer 30 .
  • FIG. 18 shows a light emitting device package that includes any of the aforementioned embodiments of the light emitting device.
  • the light emitting device package 600 includes a package body 300 , first and second conductivity layers 310 and 320 mounted on the package body 300 , a light emitting device 200 mounted on the package body 300 and electrically coupled to the first and second conductivity layers 310 and 320 , and a molding member 500 enclosing the light emitting device 200 .
  • the package body 300 may be formed to include, for example, one or more of a silicon material, a synthetic resin material, or a metallic material and may have an inclined surface around the light emitting device 200 .
  • the first conductivity layer 310 and the second conductivity layer 320 are electrically separated and supply electric power to the light emitting device 200 . Also, the first and second conductivity layers 310 and 320 may reflect light generated from the light emitting device 200 to increase light efficiency and may emit heat generated from the light emitting device 200 to an outside or external location.
  • the light emitting device 200 may be any of the light emitting devices previously described, and light emitting device 200 may be mounted on the package body 300 or on the first conductivity layer 310 or the second conductivity layer 320 .
  • the light emitting device 200 may be electrically coupled to the first conductivity layer 310 and the second conductivity layer 320 through a wire 400 .
  • the package of FIG. 18 is formed to include a light emitting device 200 according to the first or second embodiments, two wires 400 are used.
  • the package is formed to include a light emitting device 200 according to the third or fourth embodiments, only one wire 400 may be used.
  • the wire 400 may not be used at all.
  • the molding member 500 may be provided to enclose and protect the light emitting device 100 .
  • a fluorescent material may be included in the molding member 500 to change the wavelength of light emitted from the light emitting device 200 . Because the light emitting device package 600 employs a light emitting device 200 having enhanced light efficiency, it follows that light emitting device package 600 will also demonstrate superior light efficiency.
  • the light emitting device package 600 may include a plurality of light emitting device packages arrayed onto a substrate.
  • a plurality of optical members such as a light guide panel, a prism sheet, a diffusion sheet, a fluorescent sheet, and/or the like, may be arranged on a path of light emitted from the light emitting device package 600 .
  • the light emitting device package, substrate, and optical members may function as a backlight unit or lighting unit, and a lighting system may include, for example, a backlight unit, a lighting unit, an indicator unit, a lamp, a streetlamp, etc.
  • FIG. 19 shows a disassembled view of a backlight unit 1100 that includes a light emitting device or package according to any one of the aforementioned embodiment.
  • the backlight unit 1100 may serve as a lighting system for a variety of applications.
  • the backlight unit 1100 may include a bottom frame 1140 , a light guide member 1120 disposed in the bottom frame, and a light emitting module 1110 disposed on at least one side surface of light guide member 1120 and/or under light guide member 1120 .
  • a reflective sheet 1130 may be disposed under the light guide member 1120 .
  • the bottom frame 1140 may be formed in a box shape a top surface of which is opened such that the light guide member 1120 , the light emitting module 1110 and the reflective sheet 1130 can be received.
  • the bottom frame 1140 may be formed of a metal or resin material, but other materials are also possible.
  • the light emitting module 1110 may include a substrate 700 and a plurality of light emitting device packages 600 mounted on the substrate 700 .
  • the plurality of light emitting device packages 600 may provide light to the light guide member 1120 .
  • the light emitting device packages 600 are mounted on substrate 700 , but in other embodiments the light emitting devices may be mounted directly on the substrate 700 .
  • the light emitting module 1110 may be disposed on at least one of inner side surfaces of the bottom frame 1140 , and thus may provide light to at least one of the side surfaces of the light guide member 1120 .
  • the light emitting module 1110 may be disposed under the light guide member 1120 inside the bottom frame 1140 to provide light toward a bottom surface of the light guide member 1120 .
  • the constitution may be modified according to the specific design requirements of the backlight unit 1100 according to, for example, an intended application.
  • the light guide member 1120 may be disposed inside the bottom frame 1140 .
  • the light guide member 1120 may convert the light provided from the light emitting module to a planar light source and guide the converted plane light source to a display panel (not shown).
  • the light guide member 1120 may be, for example, a light guide panel (LGP).
  • LGP may be formed of, for example, one of acryl-series resin such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), poly carbonate (PC), COC, and polyethylene naphthalate resin.
  • PMMA polymethyl metaacrylate
  • PET polyethylene terephthlate
  • PC poly carbonate
  • COC polyethylene naphthalate resin
  • An optical sheet 1150 may be disposed on the light guide member 1120 , and may include, for example, at least one of a diffusion sheet, a light-condensing sheet, a brightness enhancement sheet and a fluorescent sheet.
  • the optical sheet 1150 may be configured by the diffusion sheet, the light-condensing sheet, the brightness enhancement sheet and the fluorescent sheet stacked.
  • the diffusion sheet 1150 diffuses the light emitted from the light emitting module 1110 uniformly, and the diffused light may be condensed on the display panel (not shown) by the light-condensing sheet.
  • the light emitted from the light-condensing sheet is a randomly polarized light
  • the brightness enhancement sheet may increase the polarization of the light emitted from the light-condensing sheet.
  • the light-condensing sheet may be, for example, a horizontal and/or vertical prism sheet.
  • the brightness enhancement sheet may be, for example, a dual brightness enhancement film.
  • the fluorescent sheet may be a transparent plate or film including a fluorescent material.
  • the reflective sheet 1130 may be disposed under the light guide member 1120 , and may serve to reflect light emitted from the bottom surface of the light guide member 1120 toward a light emitting surface of the light guide member 1120 .
  • the reflective sheet 1130 may be formed, for example, of a resin material having good reflectivity such as PET, PC, or PVC resins or other materials.
  • FIG. 20 shows a lighting unit 1200 that includes any one or more of the aforementioned embodiments of the light emitting device or light emitting device package.
  • This lighting unit includes a case body 1210 , a light emitting module 1230 installed in the case body 1210 , and a connection terminal 1220 installed in the case body 1210 to be supplied with an electric power from an external power source.
  • the case body 1210 may be formed of a material having good heat shielding characteristic, for example, a metal material or a resin material.
  • the light emitting module 1230 may include a substrate 700 , and at least one light emitting device package 600 mounted on the substrate 700 .
  • the light emitting device packages 600 are mounted on the substrate 700 , but the light emitting devices according to any of the embodiments described herein may be mounted directly on the substrate 700 .
  • the substrate 700 may be an insulator substrate on which a circuit pattern is printed and may include, for example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, etc. Also, the substrate 700 may be formed of a material to efficiently reflect light, and a surface thereof may be formed in a color capable of efficiently reflecting light, for example, white color, silver color, or the like.
  • PCB general printed circuit board
  • At least one light emitting device package may be mounted on the substrate 700 .
  • Each of the light emitting device packages 200 may include at least one light emitting diode (LED).
  • the light emitting diode may include a color LED emitting red, green, blue or white light, and a UV LED emitting ultraviolet (UV).
  • the light emitting module 1230 may have a combination of several LEDs so as to obtain desired color and luminance.
  • the light emitting module 1230 may have a combination of a white LED, a red LED, and a green LED so as to obtain a high color rendering index (CRI).
  • a fluorescent sheet may be further disposed on a path of light emitted from the light emitting module 1230 . The fluorescent sheet converts the wavelength of the light emitted from the light emitting module.
  • the fluorescent sheet may include a yellow fluorescent material, so that the light, which is emitted from the light emitting module 1230 and passes through the fluorescent sheet, finally appears as white light.
  • connection terminal 1220 may be electrically coupled to the light emitting module 1230 to supply an electric power to the light emitting module 1230 .
  • the connection terminal 1220 may be screwed and coupled to an external power, but the invention is not limited thereto.
  • the connection terminal 1220 may be made in a pin type and inserted into an external power, or may be connected to the external power through a power line.
  • the lighting system may include at least one of a light guide member, a diffusion sheet, a light-condensing sheet, a brightness enhancement sheet and a fluorescent sheet on a traveling path of light to obtain a desired optical effect. Because the lighting system includes a light emitting device or package having superior light efficiency, the lighting system can show superior light efficiency as well.
  • One or more embodiments described herein thus, provide a light emitting device having a novel structure and a method of manufacturing the same.
  • One or more of these embodiments also provide a light emitting device with enhanced light efficiency, and a method of manufacturing the same.
  • One or more of these embodiments also provide a light emitting device and a method of manufacturing the same in which a growth substrate can be easily separated.
  • a light emitting device comprises: a first semiconductor layer; a second semiconductor layer; and an active layer between the first and second semiconductor layers, the first semiconductor layer includes a first surface facing the active layer, and a second surface oppositely facing the first surface, and the first semiconductor layer has a stepped portion formed at a side surface thereof and thus the area of the second surface is smaller than a maximum area of the first semiconductor layer.
  • a light emitting device package comprises: a package body; a first conductivity layer and a second conductivity layer on the package body; a light emitting device disposed on the package body and electrically connected to the first conductivity layer and the second conductivity layer; and a molding member enclosing the light emitting device, wherein the light emitting device includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer includes a first surface facing the active layer, and a second surface oppositely facing the first surface, and the first semiconductor layer has a stepped portion formed at a side surface thereof and thus the area of the second surface is smaller than a maximum area of the first semiconductor layer.
  • a lighting system comprises: a light emitting module including a substrate; and a light emitting device on the substrate, wherein the light emitting device comprises: a first semiconductor layer; a second semiconductor layer; and an active layer between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer includes a first surface facing the active layer, and a second surface oppositely facing the first surface, and the first semiconductor layer has a stepped portion formed at a side surface thereof and thus the area of the second surface is smaller than a maximum area of the first semiconductor layer.
  • a method of manufacturing a light emitting device comprises: forming a mask layer defining a plurality of light emitting structure layer growth regions on a growth substrate; forming a light emitting structure layer including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer from the light emitting structure layer growth regions; selectively removing the light emitting structure layer and forming a first electrode on the first conductivity type semiconductor layer and a second electrode on the second conductivity type semiconductor layer; and cutting the growth substrate and the mask layer to separate the growth substrate and the light emitting structure layer.
  • a method of manufacturing a light emitting device comprises: forming a mask layer defining a plurality of light emitting structure layer growth regions on a growth substrate; forming a light emitting structure layer including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer from the light emitting structure layer growth regions; forming a protective layer between the light emitting structure layers; forming a second electrode on the light emitting structure layer and the protective layer; separating the growth substrate and removing the mask layer and the protective layer; forming a first electrode on the first conductivity type semiconductor layer; and cutting the second electrode to separate the second electrode and the light emitting structure layer.
  • a light emitting device comprises a first semiconductor layer; a second semiconductor layer; and an active layer between the first and second semiconductor layers, wherein the first semiconductor layer includes a first surface facing the active layer, a second surface opposing the first surface, and a side surface that includes a stepped portion.
  • the stepped portion causes the side surface to extend beyond one of the first surface or second surface.
  • the area of the first surface may be greater than an area of the second surface, the area of the second surface may be less than the area of the first surface as a result of the stepped portion, or an area of the first surface may be less than an area of the second surface.
  • the first semiconductor layer is a first conductivity type and the second semiconductor layer is a second conductivity type.
  • the device may also include a buffer layer, wherein a first semiconductor layer is located between the buffer layer and active layer, the first semiconductor layer is of a first conductivity type, and the second semiconductor layer is of a second conductivity type.
  • the buffer layer may be on a first portion of the first conductivity type semiconductor, and the device may further comprise a first electrode on the first semiconductor layer where the buffer layer is not formed and a second electrode under the second semiconductor layer.
  • the buffer layer may be divided into first and second sections disposed on the first semiconductor layer, the first and second sections of the buffer layer separated to expose a portion of the first semiconductor layer, the first electrode electrically coupled to the exposed portion of the first semiconductor layer.
  • the buffer layer may be an undoped layer or a doped layer, and if undoped may include a nitride.
  • the device may further include at least one reflector to reflect light emitted from the active layer.
  • the reflector is located adjacent the first semiconductor layer, and may be formed as a protrusion that extends from a surface of a substrate that supports or is coupled to the first semiconductor layer.
  • the device may also include at least one diffuser, located on the second surface of the first semiconductor layer, to diffuse light emitted from the active layer.
  • the diffuser may extend into the second surface of the first semiconductor layer, and may include a recess that extends into the second surface of the first semiconductor layer.
  • a light emitting device comprises a buffer layer, a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers.
  • the first semiconductor layer is between the buffer layer and active layer
  • the active layer is between the first and second semiconductor layers
  • a bottom surface of the buffer layer has an area smaller than an area of at least one of the surfaces of the first semiconductor layer.
  • a side surface of the buffer layer may includes a stepped portion which causes a top surface of the buffer layer facing the first semiconductor layer to have an area greater than the bottom surface of the buffer layer.
  • a side surface of the buffer layer may includes a stepped portion which causes the side surface of the buffer layer to extend beyond at least one of a top surface or the bottom surface of the buffer layer.
  • the buffer layer may be a doped layer or an undoped layer.
  • the device may include at least one reflector to reflect light emitted from the active layer.
  • the reflector may be adjacent the buffer layer and may include a protrusion that extends from a surface of a substrate that supports or is coupled to the buffer layer.
  • a light emitting device package may be formed to comprise a light emitting device in accordance with any one of the aforementioned embodiments.
  • a lighting system comprises a light emitting device as recited in claim 1 , wherein said device is coupled to a substrate of a light emitting module.
  • a method of manufacturing a light emitting device comprises forming a mask layer on a substrate to define a region of a light emitting device; forming a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type at said region; selectively removing the mask layer; and forming first and second electrodes electrically coupled to the first and second semiconductor layers respectively, wherein one of the semiconductor layers is formed to include a first surface facing the active layer, a second surface opposing the first surface, and a side surface that includes a stepped portion, and wherein the stepped portion causes the side surface to extend beyond one of the first surface or second surface.
  • a method of manufacturing a light emitting device comprises forming a mask layer on a substrate to define a region of a light emitting device; forming a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type at said region; selectively removing the mask layer; and forming first and second electrodes electrically coupled to the first and second semiconductor layers respectively, wherein one of the semiconductor layers is formed to include a first surface facing the active layer.
  • the method further includes forming a buffer layer coupled to the first and second semiconductor layers and the active layer, wherein a bottom surface of the buffer layer has an area smaller than an area of at least one of the surfaces of the semiconductor layer of the first conductivity type or the second conductivity type.
  • buffer layer may include a stepped portion that causes the bottom surface of the buffer layer to have an area smaller than an area of at least one of the surfaces of the semiconductor layer of the first conductivity type or the second conductivity type.
  • a layer or film
  • it can be directly on the other layer or substrate, or that intervening layers may be present between them.
  • intervening layers may be present between them.
  • a layer is referred to as being “between” two layers, that layer may be the only one between the two layers or one or more intervening layers may also be present between them.
  • any reference in this specification to “one embodiment,” “an embodiment,” “example embodiment,” etc. means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention.
  • the appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
US12/899,926 2010-02-04 2010-10-07 Light emitting device, method of manufacturing the same, light emitting device package and lighting system Abandoned US20110186889A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/336,756 US9484496B2 (en) 2010-02-04 2014-07-21 Light emitting device, method of manufacturing the same, light emitting device package and lighting system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100010204A KR101658838B1 (ko) 2010-02-04 2010-02-04 발광 소자 및 그 제조방법
KR10-2010-0010204 2010-02-04

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US14/336,756 Continuation US9484496B2 (en) 2010-02-04 2014-07-21 Light emitting device, method of manufacturing the same, light emitting device package and lighting system

Publications (1)

Publication Number Publication Date
US20110186889A1 true US20110186889A1 (en) 2011-08-04

Family

ID=43838005

Family Applications (2)

Application Number Title Priority Date Filing Date
US12/899,926 Abandoned US20110186889A1 (en) 2010-02-04 2010-10-07 Light emitting device, method of manufacturing the same, light emitting device package and lighting system
US14/336,756 Active US9484496B2 (en) 2010-02-04 2014-07-21 Light emitting device, method of manufacturing the same, light emitting device package and lighting system

Family Applications After (1)

Application Number Title Priority Date Filing Date
US14/336,756 Active US9484496B2 (en) 2010-02-04 2014-07-21 Light emitting device, method of manufacturing the same, light emitting device package and lighting system

Country Status (5)

Country Link
US (2) US20110186889A1 (ko)
EP (1) EP2355175A3 (ko)
KR (1) KR101658838B1 (ko)
CN (1) CN102148303B (ko)
TW (1) TW201128802A (ko)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140054595A1 (en) * 2006-04-07 2014-02-27 Seoul Semiconductor Co., Ltd. Composite substrate of gallium nitride and metal oxide
US20140110666A1 (en) * 2011-06-01 2014-04-24 Seoul Viosys Co., Ltd. Semiconductor light emitting device and method of manufacturing the same
US20160126422A1 (en) * 2012-12-04 2016-05-05 Semicon Light Co., Ltd. Semiconductor light-emitting device and method for manufacturing the same
US20180108809A1 (en) * 2014-01-20 2018-04-19 Rohm Co., Ltd. Light emitting device
US20180277589A1 (en) * 2017-03-27 2018-09-27 Lg Electronics Inc. Display device using semiconductor light emitting device

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101259999B1 (ko) * 2011-04-28 2013-05-06 서울옵토디바이스주식회사 반도체 기판 및 그 제조방법
KR20150039926A (ko) * 2013-10-04 2015-04-14 엘지이노텍 주식회사 발광소자
TWI597863B (zh) * 2013-10-22 2017-09-01 晶元光電股份有限公司 發光元件及其製造方法
CN105158831B (zh) * 2015-10-23 2018-11-30 深圳市华星光电技术有限公司 一种柔性板
KR20180058564A (ko) * 2016-11-24 2018-06-01 엘지이노텍 주식회사 반도체 소자 및 이를 포함하는 반도체 소자 패키지
TW202029529A (zh) * 2019-01-25 2020-08-01 晶元光電股份有限公司 發光元件及其製造方法
KR20200018521A (ko) * 2020-01-30 2020-02-19 엘지전자 주식회사 반도체 발광소자를 이용한 디스플레이 장치 및 이의 제조방법

Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6030849A (en) * 1997-06-16 2000-02-29 Matsushita Electric Industrial Co. Ltd. Methods of manufacturing semiconductor, semiconductor device and semiconductor substrate
US20020149024A1 (en) * 1998-09-10 2002-10-17 Hisaki Kato Light-emitting semiconductor device using gallium nitride compound semiconductor
US20030062529A1 (en) * 2001-09-28 2003-04-03 Hideaki Kato Light emitting element
US20030173575A1 (en) * 2000-02-15 2003-09-18 Dominik Eisert Radiation emitting semiconductor device
US20040113166A1 (en) * 2001-03-21 2004-06-17 Kazuyuki Tadatomo Semiconductor light-emitting device
US20040238837A1 (en) * 2001-03-15 2004-12-02 Osram Opto Semiconductors Gmbh Radiation-emitting optical component
US20050042787A1 (en) * 2001-10-29 2005-02-24 Shigetoshi Ito Nitride semiconductor device, its manufacturing method, and semiconductor optical apparatus
US20050179130A1 (en) * 2003-08-19 2005-08-18 Hisanori Tanaka Semiconductor device
US20070176193A1 (en) * 2004-09-17 2007-08-02 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device, lighting module, lighting device and method for manufacturing semiconductor light-emitting device
US20070295951A1 (en) * 2006-06-26 2007-12-27 Jen-Inn Chyi Light-emitting diode incorporating an array of light extracting spots
US20080042149A1 (en) * 2006-08-21 2008-02-21 Samsung Electro-Mechanics Co., Ltd. Vertical nitride semiconductor light emitting diode and method of manufacturing the same
US20080111139A1 (en) * 2006-11-14 2008-05-15 Samsung Electro-Mechanics Company Ltd. Vertical light emitting device and method of manufacturing the same
US20080296588A1 (en) * 2007-06-01 2008-12-04 Hugo Optotech Inc. Semiconductor substrate with electromagnetic-wave-scribed nicks, semiconductor light-emitting device with such semiconductor substrate and manufacture thereof
US20090029499A1 (en) * 2005-12-21 2009-01-29 Rohm Co., Ltd. Method for Manufacturing Nitride Semiconductor Light Emitting Element
US20090085055A1 (en) * 2007-09-27 2009-04-02 Hui Peng Method for Growing an Epitaxial Layer
US20090140281A1 (en) * 2007-11-30 2009-06-04 Lg Innotek Co., Ltd. Semiconductor light emitting device and a method of manufacturing the same
US20090173965A1 (en) * 2008-01-07 2009-07-09 Samsung Electro-Mechanics Co., Ltd. Method of manufacturing nitride semiconductor light emitting device and nitride semiconductor light emitting device manufactured using the method
US20090294784A1 (en) * 2005-11-08 2009-12-03 Rohm Co., Ltd. Nitride Semiconductor Light Emitting Element and Method for Producing Nitride Semiconductor Light Emitting Element
US7834374B2 (en) * 2006-06-23 2010-11-16 Lg Electronics Inc. Light emitting diode having vertical topology and method of making the same
US20110012155A1 (en) * 2009-07-15 2011-01-20 Advanced Optoelectronic Technology Inc. Semiconductor Optoelectronics Structure with Increased Light Extraction Efficiency and Fabrication Method Thereof
US20110062479A1 (en) * 2008-05-14 2011-03-17 Showa Denko K.K. Method of manufacturing group-iii nitride semiconductor light-emitting device, and group-iii nitride semiconductor light-emitting device, and lamp

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6274890B1 (en) * 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
US6657237B2 (en) 2000-12-18 2003-12-02 Samsung Electro-Mechanics Co., Ltd. GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
DE10148227B4 (de) * 2001-09-28 2015-03-05 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip, Verfahren zu dessen Herstellung und strahlungsemittierendes Bauelement
KR100945984B1 (ko) 2003-01-23 2010-03-09 엘지전자 주식회사 반도체 발광 다이오드 제조 방법
KR100714639B1 (ko) 2003-10-21 2007-05-07 삼성전기주식회사 발광 소자
TWI234298B (en) * 2003-11-18 2005-06-11 Itswell Co Ltd Semiconductor light emitting diode and method for manufacturing the same
KR100530986B1 (ko) 2003-11-18 2005-11-28 주식회사 이츠웰 발광 다이오드와 그 제조 방법 및 사파이어 기판의 식각방법
KR100497338B1 (ko) 2003-12-30 2005-06-23 주식회사 이츠웰 발광 다이오드 및 그 제조 방법
US8288942B2 (en) * 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
KR100631981B1 (ko) * 2005-04-07 2006-10-11 삼성전기주식회사 수직구조 ３족 질화물 발광 소자 및 그 제조 방법
CN1964081A (zh) * 2005-11-10 2007-05-16 中国科学院半导体研究所 氧化锌基的蓝光发光二极管及其制备方法
KR20090002161A (ko) * 2007-06-20 2009-01-09 엘지이노텍 주식회사 반도체 발광소자 및 반도체 발광소자의 제조 방법
TW200908378A (en) 2007-08-10 2009-02-16 Tekcore Co Ltd Manufacturing method of a light emitting diode
US8575633B2 (en) * 2008-12-08 2013-11-05 Cree, Inc. Light emitting diode with improved light extraction
KR20090073946A (ko) * 2007-12-31 2009-07-03 주식회사 에피밸리 3족 질화물 반도체 발광소자
KR101428066B1 (ko) 2008-04-02 2014-08-07 엘지이노텍 주식회사 수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및이의 제조 방법
TWI413279B (zh) * 2008-06-20 2013-10-21 Toyoda Gosei Kk Iii族氮化物半導體發光元件及其製造方法、以及燈
KR20100030472A (ko) * 2008-09-10 2010-03-18 삼성전자주식회사 발광 소자 및 발광 장치의 제조 방법, 상기 방법을 이용하여 제조한 발광 소자 및 발광 장치
KR101103882B1 (ko) * 2008-11-17 2012-01-12 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법

Patent Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6030849A (en) * 1997-06-16 2000-02-29 Matsushita Electric Industrial Co. Ltd. Methods of manufacturing semiconductor, semiconductor device and semiconductor substrate
US20020149024A1 (en) * 1998-09-10 2002-10-17 Hisaki Kato Light-emitting semiconductor device using gallium nitride compound semiconductor
US20030173575A1 (en) * 2000-02-15 2003-09-18 Dominik Eisert Radiation emitting semiconductor device
US20040238837A1 (en) * 2001-03-15 2004-12-02 Osram Opto Semiconductors Gmbh Radiation-emitting optical component
US20040113166A1 (en) * 2001-03-21 2004-06-17 Kazuyuki Tadatomo Semiconductor light-emitting device
US20030062529A1 (en) * 2001-09-28 2003-04-03 Hideaki Kato Light emitting element
US20050042787A1 (en) * 2001-10-29 2005-02-24 Shigetoshi Ito Nitride semiconductor device, its manufacturing method, and semiconductor optical apparatus
US20050179130A1 (en) * 2003-08-19 2005-08-18 Hisanori Tanaka Semiconductor device
US20070176193A1 (en) * 2004-09-17 2007-08-02 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device, lighting module, lighting device and method for manufacturing semiconductor light-emitting device
US20090294784A1 (en) * 2005-11-08 2009-12-03 Rohm Co., Ltd. Nitride Semiconductor Light Emitting Element and Method for Producing Nitride Semiconductor Light Emitting Element
US20090029499A1 (en) * 2005-12-21 2009-01-29 Rohm Co., Ltd. Method for Manufacturing Nitride Semiconductor Light Emitting Element
US7834374B2 (en) * 2006-06-23 2010-11-16 Lg Electronics Inc. Light emitting diode having vertical topology and method of making the same
US20070295951A1 (en) * 2006-06-26 2007-12-27 Jen-Inn Chyi Light-emitting diode incorporating an array of light extracting spots
US20080042149A1 (en) * 2006-08-21 2008-02-21 Samsung Electro-Mechanics Co., Ltd. Vertical nitride semiconductor light emitting diode and method of manufacturing the same
US20080111139A1 (en) * 2006-11-14 2008-05-15 Samsung Electro-Mechanics Company Ltd. Vertical light emitting device and method of manufacturing the same
US20080296588A1 (en) * 2007-06-01 2008-12-04 Hugo Optotech Inc. Semiconductor substrate with electromagnetic-wave-scribed nicks, semiconductor light-emitting device with such semiconductor substrate and manufacture thereof
US20090085055A1 (en) * 2007-09-27 2009-04-02 Hui Peng Method for Growing an Epitaxial Layer
US20090140281A1 (en) * 2007-11-30 2009-06-04 Lg Innotek Co., Ltd. Semiconductor light emitting device and a method of manufacturing the same
US20090173965A1 (en) * 2008-01-07 2009-07-09 Samsung Electro-Mechanics Co., Ltd. Method of manufacturing nitride semiconductor light emitting device and nitride semiconductor light emitting device manufactured using the method
US20110062479A1 (en) * 2008-05-14 2011-03-17 Showa Denko K.K. Method of manufacturing group-iii nitride semiconductor light-emitting device, and group-iii nitride semiconductor light-emitting device, and lamp
US20110012155A1 (en) * 2009-07-15 2011-01-20 Advanced Optoelectronic Technology Inc. Semiconductor Optoelectronics Structure with Increased Light Extraction Efficiency and Fabrication Method Thereof

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140054595A1 (en) * 2006-04-07 2014-02-27 Seoul Semiconductor Co., Ltd. Composite substrate of gallium nitride and metal oxide
US9224817B2 (en) * 2006-04-07 2015-12-29 Sixpoint Materials, Inc. Composite substrate of gallium nitride and metal oxide
US9431488B2 (en) 2006-04-07 2016-08-30 Sixpoint Materials, Inc. Composite substrate of gallium nitride and metal oxide
US20140110666A1 (en) * 2011-06-01 2014-04-24 Seoul Viosys Co., Ltd. Semiconductor light emitting device and method of manufacturing the same
US20160126422A1 (en) * 2012-12-04 2016-05-05 Semicon Light Co., Ltd. Semiconductor light-emitting device and method for manufacturing the same
US9691944B2 (en) * 2012-12-04 2017-06-27 Semicon Light Co., Ltd. Semiconductor light-emitting device and method for manufacturing the same
US20180108809A1 (en) * 2014-01-20 2018-04-19 Rohm Co., Ltd. Light emitting device
US20180277589A1 (en) * 2017-03-27 2018-09-27 Lg Electronics Inc. Display device using semiconductor light emitting device
CN110476253A (zh) * 2017-03-27 2019-11-19 Lg电子株式会社 使用半导体发光器件的显示装置

Also Published As

Publication number Publication date
US20140353580A1 (en) 2014-12-04
CN102148303A (zh) 2011-08-10
KR101658838B1 (ko) 2016-10-04
TW201128802A (en) 2011-08-16
EP2355175A3 (en) 2014-04-30
KR20110090437A (ko) 2011-08-10
CN102148303B (zh) 2015-05-06
EP2355175A2 (en) 2011-08-10
US9484496B2 (en) 2016-11-01

Similar Documents

Publication Publication Date Title
US9484496B2 (en) Light emitting device, method of manufacturing the same, light emitting device package and lighting system
US8319241B2 (en) Light emitting device, light emitting device package, and lighting system
US8748917B2 (en) Light emitting device and method thereof
KR101154709B1 (ko) 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
KR101125335B1 (ko) 발광소자, 발광소자 제조방법 및 발광소자 패키지
US8384094B2 (en) Light emitting device, method of manufacturing the same, light emitting device package and lighting system
US8916891B2 (en) Light emitting device, light emitting device package, method of manufacturing light emitting device, and lighting system
KR20110138726A (ko) 발광 소자, 발광 소자 제조방법, 발광 소자 패키지, 및 조명 시스템
US8368107B2 (en) Light emitting device, method of manufacturing the same, and light emitting device package
EP2355196B1 (en) Light emitting device package, method of manufacturing the same, and lighting system
KR101081169B1 (ko) 발광 소자 및 그 제조방법, 발광 소자 패키지, 조명 시스템
US8878212B2 (en) Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting system
US8513697B2 (en) Light emitting device, method of manufacturing the same, light emitting device package, and illumination system
KR101803569B1 (ko) 발광 소자
KR20110115384A (ko) 발광 소자 및 그 제조방법, 발광 소자 패키지 및 조명 시스템
EP2381492B1 (en) Light emitting device with resonant thickness of one semiconductor layer
KR20120048413A (ko) 발광 소자 및 발광 소자 패키지
US20110089435A1 (en) Light emitting device, method of manufacturing the same, light emitting device package, and lighting system
KR20120014972A (ko) 발광 소자, 발광 소자 제조방법, 발광 소자 패키지, 및 조명 시스템
KR20110118333A (ko) 발광 소자, 발광 소자 제조방법, 발광 소자 패키지, 및 조명 시스템
KR101865919B1 (ko) 발광 소자, 발광 소자 패키지, 라이트 유닛, 발광 소자 제조방법
KR20120000974A (ko) 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
KR20120087035A (ko) 발광 소자 및 발광 소자 패키지
KR101664501B1 (ko) 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
KR101830950B1 (ko) 발광소자

Legal Events

Date Code Title Description
AS Assignment

Owner name: LG INNOTEK, CO., LTD., KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KANG, DAE SUNG;WON, JUNG MIN;REEL/FRAME:025109/0865

Effective date: 20100812

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION