US20110171445A1 - Transparent electrode - Google Patents
Transparent electrode Download PDFInfo
- Publication number
- US20110171445A1 US20110171445A1 US13/120,033 US200913120033A US2011171445A1 US 20110171445 A1 US20110171445 A1 US 20110171445A1 US 200913120033 A US200913120033 A US 200913120033A US 2011171445 A1 US2011171445 A1 US 2011171445A1
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- US
- United States
- Prior art keywords
- transparent electrode
- polyimide
- film
- less
- electrode according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229920001721 polyimide Polymers 0.000 claims abstract description 88
- 239000009719 polyimide resin Substances 0.000 claims abstract description 22
- 239000004020 conductor Substances 0.000 claims abstract description 12
- 230000000930 thermomechanical effect Effects 0.000 claims abstract description 10
- 238000004458 analytical method Methods 0.000 claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 46
- 239000002041 carbon nanotube Substances 0.000 claims description 37
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 36
- 239000000843 powder Substances 0.000 claims description 28
- 239000007787 solid Substances 0.000 claims description 23
- 239000002966 varnish Substances 0.000 claims description 20
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 7
- 229910003437 indium oxide Inorganic materials 0.000 claims description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 6
- LNNWKAUHKIHCKO-UHFFFAOYSA-N dioxotin;oxo(oxoindiganyloxy)indigane Chemical compound O=[Sn]=O.O=[In]O[In]=O LNNWKAUHKIHCKO-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
- 239000000243 solution Substances 0.000 description 66
- 239000004642 Polyimide Substances 0.000 description 32
- 239000010410 layer Substances 0.000 description 32
- 238000000034 method Methods 0.000 description 29
- 239000010408 film Substances 0.000 description 28
- 229920005575 poly(amic acid) Polymers 0.000 description 21
- 239000002243 precursor Substances 0.000 description 19
- 239000000203 mixture Substances 0.000 description 18
- 239000011347 resin Substances 0.000 description 18
- 229920005989 resin Polymers 0.000 description 18
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 16
- 238000002360 preparation method Methods 0.000 description 15
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 10
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000002156 mixing Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 239000002985 plastic film Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 229920006255 plastic film Polymers 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000004984 aromatic diamines Chemical class 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 2
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 2
- APXJLYIVOFARRM-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C(O)=O)C(C(O)=O)=C1 APXJLYIVOFARRM-UHFFFAOYSA-N 0.000 description 2
- NVKGJHAQGWCWDI-UHFFFAOYSA-N 4-[4-amino-2-(trifluoromethyl)phenyl]-3-(trifluoromethyl)aniline Chemical group FC(F)(F)C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F NVKGJHAQGWCWDI-UHFFFAOYSA-N 0.000 description 2
- JVERADGGGBYHNP-UHFFFAOYSA-N 5-phenylbenzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C=2C=CC=CC=2)=C1C(O)=O JVERADGGGBYHNP-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 239000002079 double walled nanotube Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000002048 multi walled nanotube Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 230000000379 polymerizing effect Effects 0.000 description 2
- 238000007363 ring formation reaction Methods 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 1
- WCXGOVYROJJXHA-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)S(=O)(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 WCXGOVYROJJXHA-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 1
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 1
- PJWQLRKRVISYPL-UHFFFAOYSA-N 4-[4-amino-3-(trifluoromethyl)phenyl]-2-(trifluoromethyl)aniline Chemical group C1=C(C(F)(F)F)C(N)=CC=C1C1=CC=C(N)C(C(F)(F)F)=C1 PJWQLRKRVISYPL-UHFFFAOYSA-N 0.000 description 1
- MQAHXEQUBNDFGI-UHFFFAOYSA-N 5-[4-[2-[4-[(1,3-dioxo-2-benzofuran-5-yl)oxy]phenyl]propan-2-yl]phenoxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC2=CC=C(C=C2)C(C)(C=2C=CC(OC=3C=C4C(=O)OC(=O)C4=CC=3)=CC=2)C)=C1 MQAHXEQUBNDFGI-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- 239000004262 Ethyl gallate Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000012024 dehydrating agents Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001132 ultrasonic dispersion Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/22—Electrodes, e.g. special shape, material or configuration
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2211/00—Plasma display panels with alternate current induction of the discharge, e.g. AC-PDPs
- H01J2211/20—Constructional details
- H01J2211/22—Electrodes
- H01J2211/225—Material of electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
- Y10T428/24967—Absolute thicknesses specified
- Y10T428/24975—No layer or component greater than 5 mils thick
Definitions
- the present invention relates to a transparent electrode, and, more particularly, to a transparent electrode in which an organic electrode layer is formed on a plastic film.
- electrode materials for displays not only must be transparent and exhibit low resistance but also must exhibit high strength such that devices can be mechanically stabilized even when they are bent or folded. Further, electrode materials for displays must have a thermal expansion coefficient similar to that of a plastic substrate such that appliances are not short-circuited or their surface resistance is not greatly changed even when they are overheated or their temperature is high.
- flexible displays enable the manufacture of displays having various shapes, they can be used for the trademarks of clothes, advertising boards, price list panels of goods display stands, large-area illumination apparatuses and the like, whose colors and patterns can be changed, as well as portable displays.
- transparent conductive film is widely used in devices requiring both transmissivity and conductivity, such as image sensors, solar cells, various types of displays (PDPs, LCDs, PDPs, etc.) and the like.
- ITO indium tin oxide
- ITO indium tin oxide
- the indium tin oxide (ITO) is problematic in that high process costs are required because a vacuum process is needed to form an ITO thin film and in that the lifespan of a flexible display becomes short because the ITO thin film easily breaks when the flexible display is bent or folded.
- Korean Unexamined Patent Application Publication No. 10-2005-001589 discloses a method of manufacturing a transparent electrode having a transmissivity of 80% or more and a surface resistance of 100 ⁇ /sq or less in the visible light range, in which carbon nanotubes are dispersed in or on a coating layer on the nanoscale by chemically bonding carbon nanotubes with polymers and then forming the resulting product into a film or by coating a conductive polymer layer with purified carbon nanotubes or carbon nanotubes chemically bonded with polymers, and then metal nanoparticles, such as gold, silver or the like, are added to the carbon nanotube-dispersed coating layer, thus minimizing the scattering of light in the visible light range and improving conductivity.
- the transparent electrode is manufactured by reacting a carbon nanotube-dispersed solution with polyethylene terephthalate (PET) to prepare a highly-concentrated carbon nanotube-polymer copolymer solution, applying the copolymer solution onto a polyester film and then drying the copolymer solution.
- PET polyethylene terephthalate
- an object of the present invention is to provide a transparent electrode having excellent transmissivity, in which polymer modification occurs at minimum.
- Another object of the present invention is to provide a transparent electrode having high electroconductivity.
- An aspect of the present invention provides a transparent electrode, including: a polyimide film having an average linear thermal expansion coefficient of 50.0 ppm/° C. or less, which is measured by thermo-mechanical analysis based on a film thickness of 50 ⁇ 100 ⁇ m at a temperature of 50 ⁇ 250° C., and a yellowness of 15 or less; and an electrode layer including a conductive material and a polyimide resin having an average linear thermal expansion coefficient of 50.0 ppm/° C. or less, which is measured by thermo-mechanical analysis based on a film thickness of 50 ⁇ 100 ⁇ m at a temperature of 50 ⁇ 250° C., and a yellowness of 15 or less.
- the electrode layer may be formed by dispersing the conductive material in the polyimide resin or dispersing the conductive material on a polyimide resin layer.
- the polyimide film may have an L value of 90 or more, an a value of 5 or less and a b value of 5 or less when its chromatic coordinates are measured using a UV spectrometer based on a film thickness of 50 ⁇ 100 ⁇ m.
- the conductive material may be carbon nanotubes, indium tin oxide (ITO) powder or indium zinc oxide (IZO) powder.
- the electrode layer may be composed of varnish including 0.001 ⁇ 1 parts by weight of carbon nanotubes based on 100 parts by weight of a solid content of the polyimide resin.
- the electrode layer is composed of varnish including 2 ⁇ 100 parts by weight of ITO powder or IZO powder based on 100 parts by weight of the solid content of the polyimide resin.
- the ITO powder may include 80 ⁇ 95 wt % of indium oxide and 5 ⁇ 20 wt % of tin oxide.
- the electrode layer may have a thickness of 10 nm ⁇ 25 um.
- the transparent electrode may have a transmissivity of 60% or more at a thickness of 500 nm.
- the transparent electrode according to the present invention includes a polyimide film, serving as a substrate, satisfying an average linear thermal expansion coefficient and having a yellowness of 15 or less and an electrode layer formed by dispersing a conductive material in a polyimide resin satisfying an average linear thermal expansion coefficient and having a yellowness of 15 or less, the transparent electrode of the present invention is advantageous in that a problem of a short circuit does not occur even when apparatuses including this transparent electrode are over-heated because it has excellent heat resistance, and in that it is transparent and has high electroconductivity.
- a transparent electrode according to an embodiment of the present invention includes a polyimide film, serving as a substrate, having an average linear thermal expansion coefficient of 50.0 ppm/° C. or less, which is measured by thermo-mechanical analysis based on a film thickness of 50 ⁇ 100 ⁇ m at a temperature of 50 ⁇ 250° C., and a yellowness of 15 or less.
- the average linear thermal expansion coefficient of the polyimide film is more than 50.0 ppm/° C., the difference in thermal expansion coefficient between the polyimide film and a plastic substrate is increased, so that there is a problem in that a short circuit occurs when apparatuses provided with the transparent electrode are over-heated or when their temperature is high.
- the average linear thermal expansion coefficient of the polyimide film is obtained by measuring the change in length of the polyimide film depending on the increase of temperature at a predetermined temperature range, and may be measured using a thermo-mechanical analyzer. It is preferred that the average linear thermal expansion coefficient of the polyimide film be 35.0 ppm/° C. or less.
- a colorless transparent plastic film specifically, a polyimide film having a yellowness of 15 or less based on a film thickness of 50 ⁇ 100 ⁇ m be used.
- the polyimide film satisfies the above transparency conditions, it can be used as a plastic substrate for transmissive electronic paper, liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs).
- a polyimide film having an average transparency of 88% or more at a wavelength of 550 nm or an average transparency of 70% or more at a wavelength of 420 nm, when measured using a UV spectrometer based on a film thickness of 50 ⁇ 100 ⁇ m, may be used as the plastic film.
- a polyimide film having a L value of 90 or more, an a value of 5 or less and a b value of 5 or less, when its chromatic coordinates are measured using a UV spectrometer based on a film thickness of 50 ⁇ 100 ⁇ m may be used.
- the polyimide film can be formed by polymerizing aromatic dianhydride with aromatic diamine to prepare polyamic acid and then imidizing the polyamic acid.
- aromatic dianhydride may include, but are not limited to, one or more selected from among 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6-FDA), 4-(2,5-dioxoterahydrofuran-3-yl)-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic anhydride (TDA), 4,4′-(4,4′-isopropylidenediphenoxy)bis(phthalicanhydride) (HBDA), pyromellitic dianhydride (PMDA), biphenyltetracarboxylic dianhydride (BPDA), and oxydiphthalic dianhydride (ODPA).
- 6-FDA 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane
- aromatic diamine may include, but are not limited to, one or more selected from among 2,2-bis[4-(4-aminophenoxy)-phenyl]propane (6HMDA), 2,2′-bis(trifluoromethyl)-4,4′-diaminobiphenyl (2,2′-TFDB), 3,3′-bis(trifluoromethyl)-4,4′-diaminobiphenyl (3,3′-TFDB), 4,4′-bis(3-aminophenoxy)diphenylsulfone (DBSDA), bis(3-aminophenyl)sulfone (3DDS), bis(4-aminophenyl)sulfone (ODDS), 1,3-bis(3-aminophenoxy)benzene (APB-133), 1,4-bis(4-aminophenoxy)benzene (APB-134), 2,2′-bis[3(3-aminophenoxy)phenyl]hexafluoropropane (3-BD
- the polyimide film can be prepared by polymerizing aromatic diamine with aromatic dianhydride in a first solvent to form a polyamic acid solution, imidizing the polyamic acid solution, mixing the imidized polyamic acid solution with a second solvent to form a mixed solution and then filtering and drying the mixed solution to obtain a solid polyimide resin, and then dissolving the solid polyimide resin in the first solvent to form a polyimide solution and then forming the polyimide solution into a film through a film forming process.
- the second solvent may have lower polarity than the first solvent.
- the first solvent may be one or more selected from among m-cresol, N-methyl-2-pyrrolidone (NMP), dimethylformamide (DMF), dimethylacetamide (DMAc), dimethylsulfoxide (DMSO), acetone and diethyl acetate
- the second solvent may be one or more selected from among water, alcohols, ethers and ketones.
- the plastic film when a metal film is formed on a plastic film, in order to form a metal film having uniform thickness, the plastic film may have a surface flatness of 2 ⁇ m or less, preferably, 0.001 ⁇ 0.04 ⁇ m.
- the electrode layer is formed on this polyimide film substrate.
- the electrode layer may be a resin layer in which a conductive material is dispersed in a polyimide resin satisfying the characteristics of the above-mentioned polyimide film.
- the conductive material may be dispersed in the polyimide resin or on a polyimide resin layer.
- a resin layer in which carbon nanotubes, indium tin oxide (ITO) powder or indium zinc oxide (IZO) powder are dispersed, or a resin film on which carbon nanotubes, indium tin oxide (ITO) powder or indium zinc oxide (IZO) powder are dispersed can be used as the electrode layer.
- the resin layer in which carbon nanotubes, indium tin oxide (ITO) powder or indium zinc oxide (IZO) powder are dispersed may obtained by applying a transparent polyimide varnish containing carbon nanotubes, ITO powder or IZO powder or may be formed by dispersing carbon nanotubes, ITO powder or IZO powder in a transparent polyimide varnish and then applying the dispersed transparent polyimide varnish.
- the polyimide varnish may include 0.001 ⁇ 1 part by weight of carbon nanotubes based on 100 parts by weight of a solid resin therein.
- the kinds of carbon nanotubes may include, but are not limited to, single-wall carbon nanotubes (SWCNTs), double-wall carbon nanotubes (DWCNTs), multi-wall carbon nanotubes (MWCNTs), reformed carbon nanotubes obtained by reforming carbon nanotubes through chemical or physical treatment, and the like.
- methods of dispersing carbon nanotubes in a varnish are not particularly limited.
- carbon nanotubes may be dispersed in a varnish by chemical-bonding the carbon nanotubes with monomers in the varnish through physical treatment, such as ultrasonic dispersion, three roll dispersion, homogenization, kneading, mill-blending, ball-milling or the like, and chemical treatment.
- the introduction of carbon nanotubes (CNTs) may be performed through an in-situ method during varnish polymerization or a blending method after the varnish polymerization.
- an additive such as a dispersant, an emulsifier or the like, may be used.
- a carbon nanotube-dispersed resin layer may be formed using a casting method, such as a spin coating method, a doctor blade method or the like, but the present invention is not limited thereto.
- a carbon nanotube-dispersed polyimide resin layer be used as an electrode layer because its conductivity can be improved due to the peculiar structure of carbon nanotubes without causing its transparency to be deteriorated.
- a process of aligning carbon nanotubes using electrical or mechanical friction may be performed after the dispersion of carbon nanotubes in a resin layer or after the formation of an electrode layer including carbon nanotubes. Owing to the process of aligning carbon nanotubes, the electroconductivity of carbon nanotubes is improved. Also, owing to using a transparent resin layer including carbon nanotubes as an optical waveguide, optical movability and spreadability are increased, thus increasing the functionality as a source for light emissions.
- the amount thereof may be 2 ⁇ 100 parts by weight based on 100 parts by weight of a solid resin in a varnish.
- the electrical characteristics of the electrode layer when ITO powder is added can be adjusted depending on the amount of an indium-tin oxide (ITO) mixture or the mixing ratio of indium oxide to tin oxide in the mixture.
- the indium-tin oxide mixture may include 80 ⁇ 95 wt % of indium oxide (In 2 O 3 ) and 5 ⁇ 20 wt % of tin oxide (SnO 2 ).
- the indium-tin oxide mixture may be powdered, and may have an average minimum diameter of 30 ⁇ 70 nm and an average maximum diameter of 60 ⁇ 120 nm although its size depends on the kinds of materials in use and reaction conditions.
- Methods of preparing a varnish including the indium-tin oxide mixture are not particularly limited.
- the varnish including the indium-tin oxide mixture may be prepared by dispersing the mixture in a polyamic acid solution. It is advantageous in terms of realizing conductivity or maintaining softness that the amount of the indium-tin oxide mixture be 2 ⁇ 100 parts by weight based on 100 parts by weight of solid polyamic acid.
- Methods of introducing the indium-tin oxide mixture into the polyamic acid solution are not particularly limited. Examples of these methods may include a method of adding the indium-tin oxide mixture to the polyamic acid solution before or during polymerization, a method of kneading the indium-tin oxide mixture after the polymerization of the polyamic acid, a method of preparing a dispersion liquid including the indium-tin oxide mixture and then mixing the dispersion liquid with the polyamic acid solution, and the like.
- the dispersibility of the indium-tin oxide mixture is influenced by the acidity-basicity and viscosity of the dispersion liquid, and the uniform conductivity and visible-light transmissivity of the electrode layer is influenced by the dispersibility of the indium-tin oxide mixture, so that a process of dispersing the indium-tin oxide mixture must be sufficiently performed.
- the process of dispersing the indium-tin oxide mixture may be performed using a three-roll disperser, an ultrasonic disperser, a homogenizer, a ball mill or the like.
- the transparent electrode film obtained in this way can realize a bright image because its electroconductivity is improved without decreasing the transmissivity of incident light, particularly, because it exhibits high light transmissivity compared to an electrode film composed of only carbon nanotubes.
- the transparent electrode film according to an embodiment of the present invention may have a surface resistance of 400 ⁇ /sq or less and a light transmittance of 60% or more at a wavelength of 500 nm.
- a polyimide precursor solution (solid content: 20%) was prepared by polycondensing 2,2′-bis(trifluoromethyl)-4,4′-diaminobiphenyl (2,2′-TFDB) and biphenyltetracarboxylic dianhydride (BPDA) with 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6-FDA) in dimethylacetamide using a commonly-used method.
- This reaction procedure is represented by Reaction Formula 1 below.
- Reaction Formula 2 represents a reaction procedure used to obtain a polyimide film by heating the polyimide precursor.
- the polyimide precursor was not completely imidized into polyimide, but was partially imidized into polyimide at a predetermined ratio.
- a form A polyimide precursor
- a form B intermediate
- a form C imide
- the imidized solution including the form A, form B and form C was dissolved in 300 g of water to precipitate solid matter, and then the precipitated solid matter was finely powdered through filtering and pulverizing processes and then dried in a vacuum oven at a temperature of 80 ⁇ 100° C. for 2 ⁇ 6 hours to obtain about 8 g of solid resin powder.
- the form A polyimide precursor
- This solid resin powder was dissolved in 32 g of DMAc or DMF, which is a solvent for polymerization, to obtain 20 wt % of a polyimide solution.
- the obtained polyimide solution was heated at a heating rate of 1 ⁇ 10° C./min for 2 ⁇ 8 hours to a temperature of 40 ⁇ 400° C. to obtain a polyimide film having a thickness of 50 ⁇ m and 100 ⁇ m.
- the imidization ratio of the polyimide precursor can be controlled by changing heating temperature or time, and, preferably, is about 30 ⁇ 90%.
- the water is removed by additionally performing an azeotropic reaction using toluene or xylene at the time of heating the polyimide precursor solution or by volitilizing the above-mentioned dehydrating agent.
- a coating solution was prepared by mixing the partially-cured intermediate with the solvent used to prepare the polyimide precursor such that the amount of the polyimide precursor is 20 ⁇ 30 parts by weight based on 100 parts by weight of the coating solution.
- the resin solution was applied on a substrate for film formation using spin coating or a doctor blade, and was then formed into a film having a thickness of 50 ⁇ m through the above-mentioned high-temperature drying process.
- the film formed in this way has the same refractive index over the entire surface thereof because only one side of the film, taken along a vertical or horizontal axis, underwent a stretching process.
- N,N-dimethylacetamide (DMAc) 34.1904 g of N,N-dimethylacetamide (DMAc) was charged in a 100 mL 3-neck round-bottom flask, as a reactor, provided with a stirrer, a nitrogen injector, a dropping funnel, a temperature controller and a cooler while passing nitrogen through the flask, and then the reactor is cooled to 0° C., and then 4.1051 g (0.01 mol) of 6-HMDA was dissolved in the N,N-dimethylacetamide (DMAc) to form a first solution, and then the first solution was maintained at 0° C.
- DMAc N,N-dimethylacetamide
- the obtained polyamic acid solution was applied on a glass substrate to a thickness of 500 ⁇ 1000 ⁇ m using a doctor blade, and then dried in a vacuum oven at 40° C. for 1 hour and at 60° C. for 2 hours to obtain a self standing film. Subsequently, the obtained self standing film was heated at a heating rate of 5° C./min in a high-temperature furnace at 80° C. for 3 hours, at 100° C. for 1 hour, at 200° C. for 1 hour and at 300° C. for 30 minutes to prepare a polyimide film having a thickness of 50 ⁇ m.
- the visible light transmission of each of the prepared polyimide films was measured using a UV spectrometer (Cary100, manufactured by Varian Co., Ltd.).
- chromatic coordinates thereof was measured according to ASTM E 1347-06 standards using a UV spectrometer (Cary100, manufactured by Varian Co., Ltd.), and the values measured at CIE D65 as an illuminant were used.
- the yellowness thereof was measured according to ASTM E313 standards.
- thermo-mechanical analyzer Q400, manufactured by TA Instrument Co., Ltd.
- TMA thermo-mechanical analysis
- Polyimide varnish (in this case, each of the polyamic acid compositions obtained from the Preparation Examples 1 to is used as a polyimide composition), in which carbon nanotubes (SWNT, manufactured by CNI Co., Ltd.) are dispersed such that the mixing ratio of carbon nanotubes to solid content of a transparent polyimide resin is 0.001 ⁇ 1 wt %, was applied on each of the polyimide films obtained from the Preparation Examples 1 to 5 through casting or spraying to form a carbon nanotube-dispersed resin layer.
- carbon nanotubes SWNT, manufactured by CNI Co., Ltd.
- the carbon nanotube content, ITO powder content and thickness of the carbon nanotube-dispersed resin layer are given in Table 2 below.
- the visible light transmission of each of the prepared transparent electrode films was measured using a UV spectrometer (Cary100, manufactured by Varian Co., Ltd.).
- the surface resistance values thereof were measured ten times using a high resistance meter (Hiresta-UP MCT-HT450, manufactured by Mitsubishi Chemical Corp.) having a measuring range of 10 ⁇ 10 5 ⁇ 10 ⁇ 10 15 and a low resistance meter (CMT-SR 2000N, manufactured by Advanced Instrument Technology (AIT) Corp., 4-Point Probe System) having a measuring range of 10 ⁇ 10 ⁇ 3 ⁇ 10 ⁇ 10 5 , and then the average value of the measured resistance values was calculated.
- Hiresta-UP MCT-HT450 manufactured by Mitsubishi Chemical Corp.
- CMT-SR 2000N manufactured by Advanced Instrument Technology (AIT) Corp., 4-Point Probe System
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KR1020080093048A KR101248671B1 (ko) | 2008-09-23 | 2008-09-23 | 투명전극 |
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JP (1) | JP5705735B2 (fr) |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140367151A1 (en) * | 2011-12-30 | 2014-12-18 | Kolon Industries, Inc. | Transparent electrode |
EP2800104A4 (fr) * | 2011-12-26 | 2015-07-29 | Kolon Inc | Substrat en plastique |
US20160036005A1 (en) * | 2013-12-12 | 2016-02-04 | Boe Technology Group Co., Ltd. | Display panel and display device |
US20170282414A1 (en) * | 2016-04-01 | 2017-10-05 | Microcosm Technology Co. Ltd. | Flexible and transparent polyimide laminate and manufacturing method thereof |
US11518921B2 (en) | 2019-09-30 | 2022-12-06 | Sk Innovation Co., Ltd. | Antistatic polyimide-based film and flexible display panel using same |
US11845842B2 (en) | 2019-09-30 | 2023-12-19 | Sk Innovation Co., Ltd. | Window cover film and flexible display panel including the same |
US11970592B2 (en) | 2019-09-30 | 2024-04-30 | Sk Innovation Co., Ltd. | Window cover film and flexible display panel including the same |
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KR101543478B1 (ko) * | 2010-12-31 | 2015-08-10 | 코오롱인더스트리 주식회사 | 투명 폴리이미드 필름 및 그 제조방법 |
KR102417428B1 (ko) * | 2015-12-21 | 2022-07-06 | 주식회사 두산 | 지환족 모노머가 적용된 폴리아믹산 조성물 및 이를 이용한 투명 폴리이미드 필름 |
JP6461860B2 (ja) * | 2016-05-30 | 2019-01-30 | 日鉄ケミカル&マテリアル株式会社 | 透明導電性フィルムの製造方法 |
CN114381025B (zh) * | 2022-02-16 | 2022-10-14 | 东华大学 | 一种聚酰亚胺驻极体膜的制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4880895A (en) * | 1986-03-31 | 1989-11-14 | Nitto Electric Industrial Co., Ltd. | Polyimide film-forming polyamide acid solution |
US5000545A (en) * | 1987-05-28 | 1991-03-19 | Canon Kabushiki Kaisha | Liquid crystal device with metal electrode partially overlying transparent electrode |
US5470943A (en) * | 1994-01-07 | 1995-11-28 | Mitsui Toatsu Chemicals, Inc. | Polyimide |
US6652938B1 (en) * | 1998-11-09 | 2003-11-25 | Kaneka Corporation | Media transport belt |
US7436577B2 (en) * | 2005-06-20 | 2008-10-14 | Fuji Xerox Co., Ltd. | Display medium, display device and display method using the display medium |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU610606B2 (en) * | 1987-07-15 | 1991-05-23 | Government of the United States of America as represented by the Administrator of the National Aeronautics and Space Administration (NASA), The | Process for preparing low dielectric polyimides |
JP3137549B2 (ja) * | 1994-01-07 | 2001-02-26 | 三井化学株式会社 | ポリイミド |
US6962756B2 (en) * | 2001-11-02 | 2005-11-08 | Mitsubishi Gas Chemical Company, Inc. | Transparent electrically-conductive film and its use |
JP2004230690A (ja) * | 2003-01-30 | 2004-08-19 | Takiron Co Ltd | 制電性透明樹脂板 |
KR100551229B1 (ko) * | 2003-06-26 | 2006-02-10 | 주식회사 디피아이 솔루션스 | 디스플레이용 유기 투명 전극의 제조방법 |
JP2005320525A (ja) * | 2004-04-09 | 2005-11-17 | Sumitomo Metal Mining Co Ltd | 透光性導電塗料および透光性導電膜 |
JP2006137881A (ja) * | 2004-11-12 | 2006-06-01 | Kaneka Corp | 可溶性ポリイミド及び光学補償部材 |
JP2006272876A (ja) * | 2005-03-30 | 2006-10-12 | Takiron Co Ltd | 導電体 |
CN100552606C (zh) * | 2005-05-26 | 2009-10-21 | 郡是株式会社 | 透明平面体和透明接触开关 |
EP1892609A4 (fr) * | 2005-05-26 | 2013-03-27 | Gunze Kk | Corps planaire transparent et commutateur tactile transparent |
CN100523052C (zh) * | 2005-06-03 | 2009-08-05 | 长春人造树脂厂股份有限公司 | 新型聚酰亚胺树脂及其制法 |
WO2008072914A1 (fr) * | 2006-12-15 | 2008-06-19 | Kolon Industries, Inc. | Résine polyimide et couche d'alignement de cristaux liquides et film polyimide utilisant cette résine |
TWI435902B (zh) * | 2007-08-20 | 2014-05-01 | Kolon Inc | 聚亞醯胺膜 |
KR101225842B1 (ko) * | 2007-08-27 | 2013-01-23 | 코오롱인더스트리 주식회사 | 무색투명한 폴리이미드 필름 |
KR101293346B1 (ko) * | 2008-09-26 | 2013-08-06 | 코오롱인더스트리 주식회사 | 폴리이미드 필름 |
-
2008
- 2008-09-23 KR KR1020080093048A patent/KR101248671B1/ko active IP Right Grant
-
2009
- 2009-09-22 TW TW098131962A patent/TWI493571B/zh active
- 2009-09-22 JP JP2011528926A patent/JP5705735B2/ja active Active
- 2009-09-22 WO PCT/KR2009/005374 patent/WO2010035999A2/fr active Application Filing
- 2009-09-22 US US13/120,033 patent/US20110171445A1/en not_active Abandoned
- 2009-09-22 CN CN2009801362365A patent/CN102160123B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4880895A (en) * | 1986-03-31 | 1989-11-14 | Nitto Electric Industrial Co., Ltd. | Polyimide film-forming polyamide acid solution |
US5000545A (en) * | 1987-05-28 | 1991-03-19 | Canon Kabushiki Kaisha | Liquid crystal device with metal electrode partially overlying transparent electrode |
US5470943A (en) * | 1994-01-07 | 1995-11-28 | Mitsui Toatsu Chemicals, Inc. | Polyimide |
US6652938B1 (en) * | 1998-11-09 | 2003-11-25 | Kaneka Corporation | Media transport belt |
US7436577B2 (en) * | 2005-06-20 | 2008-10-14 | Fuji Xerox Co., Ltd. | Display medium, display device and display method using the display medium |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2800104A4 (fr) * | 2011-12-26 | 2015-07-29 | Kolon Inc | Substrat en plastique |
US20140367151A1 (en) * | 2011-12-30 | 2014-12-18 | Kolon Industries, Inc. | Transparent electrode |
US20160036005A1 (en) * | 2013-12-12 | 2016-02-04 | Boe Technology Group Co., Ltd. | Display panel and display device |
US9825256B2 (en) * | 2013-12-12 | 2017-11-21 | Boe Technology Group Co., Ltd. | Display panel having a top surface of the conductive layer coplanar with a top surface of the pixel define layer |
US20170282414A1 (en) * | 2016-04-01 | 2017-10-05 | Microcosm Technology Co. Ltd. | Flexible and transparent polyimide laminate and manufacturing method thereof |
US11518921B2 (en) | 2019-09-30 | 2022-12-06 | Sk Innovation Co., Ltd. | Antistatic polyimide-based film and flexible display panel using same |
US11845842B2 (en) | 2019-09-30 | 2023-12-19 | Sk Innovation Co., Ltd. | Window cover film and flexible display panel including the same |
US11970592B2 (en) | 2019-09-30 | 2024-04-30 | Sk Innovation Co., Ltd. | Window cover film and flexible display panel including the same |
Also Published As
Publication number | Publication date |
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WO2010035999A2 (fr) | 2010-04-01 |
TW201013701A (en) | 2010-04-01 |
WO2010035999A3 (fr) | 2010-07-22 |
KR101248671B1 (ko) | 2013-03-28 |
KR20100034099A (ko) | 2010-04-01 |
TWI493571B (zh) | 2015-07-21 |
JP5705735B2 (ja) | 2015-04-22 |
JP2012503299A (ja) | 2012-02-02 |
CN102160123A (zh) | 2011-08-17 |
CN102160123B (zh) | 2013-03-27 |
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