US20110136265A1 - Method of Manufacturing Thin-Film Solar Panel and Laser Scribing Apparatus - Google Patents

Method of Manufacturing Thin-Film Solar Panel and Laser Scribing Apparatus Download PDF

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Publication number
US20110136265A1
US20110136265A1 US12/962,212 US96221210A US2011136265A1 US 20110136265 A1 US20110136265 A1 US 20110136265A1 US 96221210 A US96221210 A US 96221210A US 2011136265 A1 US2011136265 A1 US 2011136265A1
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Prior art keywords
processing
scribe line
glass substrate
thin
line
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US12/962,212
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English (en)
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Keigo SHIGENOBU
Hiroshi Honda
Yasuhiko Kanaya
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Hitachi Via Mechanics Ltd
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Hitachi Via Mechanics Ltd
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Assigned to HITACHI VIA MECHANICS, LTD. reassignment HITACHI VIA MECHANICS, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KANAYA, YASUHIKO, HONDA, HIROSHI, SHIGENOBU, KEIGO
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a laser scribing technology in a manufacturing process of a thin-film solar panel.
  • FIG. 10 illustrates a processed example with a scribing apparatus of a single-type amorphous silicon thin-film solar panel which is generally known and mass-produced by a number of manufacturers of solar panels.
  • FIG. 11 is an enlarged fragmentary sectional view taken along the line A-A in FIG. 10 .
  • scribe lines 6 are scribed to form line-shaped grooves by a laser and the like in order to separate from an adjacent cell.
  • scribe lines 7 are similarly scribed for separation.
  • scribe lines 8 are similarly scribed for separation.
  • the distance between adjacent scribe line groups 2 is 6 to 12 mm
  • the distance between adjacent scribe lines is 100 to 150 ⁇ m
  • the width of each scribe line is approximately 40 to 70 ⁇ m.
  • FIGS. 12 to 14 an example of a laser beam machine (i.e., a laser scribing apparatus) to perform such scribing is illustrated in FIGS. 12 to 14 .
  • FIG. 12 is a plan view of the laser scribing apparatus and
  • FIG. 13 is a front view thereof.
  • FIG. 14 is an operational flowchart.
  • a dust collector 109 is arranged right above a position of the glass substrate 1 to be irradiated with laser light through a condenser lens 108 so as to be configured to be capable of removing powder dust and the like generated by laser scribing.
  • the glass substrate 1 on which the transparent electrode layer 3 is formed as illustrated in FIG. 11 is supplied on a conveying surface 102 of a laser scribing apparatus main body 100 .
  • a face of the glass substrate 1 not having the transparent electrode layer 3 formed is directed to the conveying surface 102 and the transparent electrode layer 3 is directed upward.
  • Forming of the transparent electrode layer 3 can be performed with a known method such as a sputtering method, a CVD method or a vapor deposition method.
  • the glass substrate 1 is supplied from a conveying loader portion in the case that the present apparatus is connected to an upstream apparatus via the conveying loader portion in a factory production line.
  • the supplying may be performed by a conveying robot or the like.
  • the glass substrate 1 supplied on the glass substrate conveying surface 102 is chucked by a glass substrate hold portion 104 which is attached to a conveyance drive portion 103 .
  • the glass substrate 1 reciprocates on the conveying surface 102 along with reciprocating of the conveyance drive portion 103 on a conveyance drive portion guide 105 .
  • the conveying surface 102 is constituted so as not to damage the glass substrate 1 , such as an air floating table or a table with resin-made free rollers.
  • the glass substrate 1 is irradiated with laser light 110 deflected by reflection mirrors (i.e., a pair of galvanometer mirrors) 107 and through a condenser lens (i.e., an f ⁇ lens) 108 , in a synchronized manner with the reciprocating motion of the glass substrate 1 on the conveying surface 102 so as to form scribe lines 111 .
  • Dust is generated due to evaporation of the transparent electrode layer 3 at a position irradiated with the laser light 110 by the processing with the laser light 110 .
  • the dust is collected by the dust collector 109 .
  • the reflection mirror 107 and the condenser lens 108 are arranged on a movable table 106 . Then, a predetermined number of lines are formed by sequential movement from a position for a scribe line formed to a position for the next scribe line to be formed, synchronized with the leftward and rightward motions of the glass substrate 1 .
  • the above operation will be described with reference to a flowchart of FIG. 14 .
  • the glass substrate 1 is conveyed and supplied on the conveying surface 102 .
  • the glass substrate 1 supplied on the conveying surface 102 is chucked by the glass substrate hold portion 104 so as to be in a state of being capable of reciprocating on the conveying surface 102 .
  • the processing is started with an operator's instruction or the like, the movable table 106 having the reflection mirrors 107 and the condenser lens 108 (hereinafter, referred to collectively as “a processing head”) is moved to the position for processing the first scribe line and N is set to be one as the first line (step 301 ).
  • the glass substrate 1 is conveyed for leftward processing (step 302 ) and the leftward processing (for the first line) is performed as the glass substrate 1 passes above the laser light irradiation position at predetermined set speed (step 303 ).
  • the glass substrate 1 stops moving on the conveying surface 102 and the movable table 106 is moved to the position for processing the next scribe line (step 304 ).
  • the glass substrate 1 is conveyed back for return processing (step 306 ).
  • the return processing (for the second line as being N+1) is performed as the glass substrate 1 passes above the laser light irradiation position at the predetermined set speed (step 307 ) and the glass substrate 1 stops (step 308 ).
  • the operation ends when processing of the predetermined number of lines set by a program is completed.
  • the above operation is described in the case of one processing head. In the case of a plural processing heads, the processing heads perform processing simultaneously in their respective assigned areas. The operation ends when processing of a predetermined number of lines for each processing head is completed.
  • the glass substrate 1 having the amorphous silicon layer 4 formed on the transparent electrode layer 3 is supplied on the conveying surface 102 of the laser scribing apparatus main body 100 as the second process.
  • a face of the glass substrate 1 not having the transparent electrode layer 3 and the amorphous silicon layer 4 formed is directed to the conveying surface 102 . That is, the transparent electrode layer 3 and the amorphous silicon layer 4 are directed upward.
  • the scribe lines 7 are formed in the amorphous silicon layer 4 at positions not overlapping with the scribe lines 6 formed in the first process.
  • the processing method is similar to that in the first process.
  • the glass substrate 1 having the back-side electrode layer 5 formed on the amorphous silicon layer 4 is supplied on the conveying surface 102 of the laser scribing apparatus main body 100 as the third process.
  • a face of the glass substrate 1 not having the transparent electrode layer 3 , the amorphous silicon layer 4 and the back-side electrode layer 5 formed is directed to the conveying surface 2 . That is, the transparent electrode layer 3 , the amorphous silicon layer 4 and the back-side electrode layer 5 are directed upward.
  • the scribe lines 8 are formed in the amorphous silicon layer 4 and the back-side electrode layer 5 at positions not overlapping with the scribe lines 6 , 7 formed in the first and second processes.
  • the processing method is similar to that in the first process.
  • FIG. 15 being an enlarged fragmentary view taken within the circle B of a scribe line group 2 in FIG. 10 illustrates scribe lines 6 to 8 formed with the above method. Circles in FIG. 15 indicate laser spots ( ⁇ 50 ⁇ m) used for the processing.
  • an imperfection a processing imperfection that a scribe line is discontinued at some intermediate point where there exists a glass scratch 9 , a foreign matter 10 adhered to the substrate which cannot be removed in a cleaning process performed in an upstream process on the film formed side or the back side of the glass substrate 1 , or an air-bubble 15 in the glass substrate as illustrated in FIGS. 16 and 17 , or the like.
  • a scribe line 6 b indicates an example of an imperfection of discontinuation in the transparent electrode layer 3 at which the laser processing is hindered by the adhered foreign matter 10 .
  • a scribe line 8 b indicates an example of an imperfection of discontinuation in the amorphous silicon layer 4 and the back-side electrode layer 5 at which the laser processing is hindered by the glass scratch 9 .
  • adjacent photovoltaic portions 11 , 12 are connected electrically as illustrated in FIG. 18 resulting in that photovoltaic efficiency is decreased.
  • adjacent photovoltaic portions 13 , 14 are connected electrically as illustrated in FIG. 19 resulting in that photovoltaic efficiency is decreased.
  • the scribe line 7 formed only in the amorphous silicon layer 4 is to function as a passage for electrons from the back-side electrode layer 5 to the transparent electrode layer 3 .
  • Japanese Patent Application Laid-Open No. 2004-214565 discloses in paragraphs 0033-0034 a method to detect an imperfection portion with a microscope after performing scribe line processing and to repair by removing the portion with emitting an impelled mixture of ice and water onto the imperfect portion.
  • Japanese Patent Application Laid-Open No. 2009-195968 discloses a method to detect an imperfect portion by detecting transmitted laser light and measuring electric characteristics and to repair by re-performing the laser processing after performing removal of foreign matters from the detected portion with a second laser light source or performing removal with an air knife or a brush, at paragraphs 0029, 0035 and 0047 for imperfection detecting and paragraph 0039 to 0040, 0055 and 0058 for imperfection removal and repair processing.
  • Japanese Patent Application Laid-Open No. 2010-021517 discloses an inspection and repair method for a thin-film solar cell unit (photovoltaic portion) which a short-circuit is detected between the adjacent thin-film solar cell unit based on the resistance value measurement using probes, by scribing one or more new (linear) laser scribe lines for the unit by moving the glass substrate at a predetermined distance repeatedly until the short-circuit is not detected, at paragraphs 0039 to 0062 as the second and third embodiments.
  • the present invention provides a method capable of repairing every imperfection easily and reliably by specifying the accurate position, size, shape of a scratch in the glass substrate 1 or the like causing the imperfection.
  • an additional laser scribing is performed to bypass an imperfection portion after specifying the accurate position, size, shape of a scratch, or the like causing the imperfection, by inspecting scribe lines using a resistance tester and inspection cameras.
  • the thickness of the glass substrate is generally in a range of 2 to 4 mm. Therefore, in inspecting scribe lines formed in films with an inspection camera, when discontinuation of a scribe line is caused by a scratch existing in a glass face side (the opposite side to a film formed side), the position, size and shape of the scratch or the like cannot be accurately viewed due to the focal depth of the camera (normally, being in the order of ⁇ m).
  • a repair processing of an additional scribing to bypass an imperfect portion can be reliably performed with the same apparatus by specifying the accurate position, size, shape of the glass scratch 9 , the adhered foreign matter 10 , the air-bubble 15 , or the like causing the imperfection, while the decrease of photovoltaic efficiency is suppressed to the minimum.
  • FIG. 1 is a plane view of a laser scribing apparatus according to apparatus example 1 of the present invention
  • FIG. 2 is a side view of the laser scribing apparatus according to apparatus example 1 of the present invention.
  • FIG. 3 is an operational flowchart of laser scribing processing according to apparatus example 1 of the present invention
  • FIG. 4 is a plane view of a laser scribing apparatus according to apparatus example 2 of the present invention.
  • FIG. 5 is a side view of the laser scribing apparatus according to apparatus example 2 of the present invention.
  • FIG. 6 is an operational flowchart of laser scribing processing according to apparatus example 2 of the present invention.
  • FIG. 7 is the first repair processing example with the laser scribing processing according to the present invention.
  • FIG. 8 is the second repair processing example with the laser scribing processing according to the present invention.
  • FIG. 9 is the third repair processing example with the laser scribing processing according to the present invention.
  • FIG. 10 is an example of a thin-film solar panel to which laser scribing is performed
  • FIG. 11 is an enlarged fragmentary sectional view taken along the line A-A of FIG. 10 ;
  • FIG. 12 is a plane view of a laser scribing apparatus in the related art.
  • FIG. 13 is a side view of a laser scribing apparatus in the related art
  • FIG. 14 is an operational flowchart of laser scribing processing in the related art
  • FIG. 15 is an enlarged fragmentary view taken within the circle B of FIG. 10 ;
  • FIG. 16 illustrates an example of imperfect portions
  • FIG. 17 is a sectional view illustrating positional relation between a glass substrate and an inspection camera
  • FIG. 18 is a sectional view of a case that a imperfection occurs in a transparent electrode layer 3 ;
  • FIG. 19 is a sectional view of a case that a imperfection occurs in a back-side electrode layer 5 .
  • apparatuses and methods therewith for specifying imperfect positions preferable for the present invention will be described as apparatus example 1 and apparatus example 2, and then, repair methods will be described as processing example 1, processing example 2 and processing example 3.
  • FIGS. 1 and 2 illustrate a laser scribing apparatus preferable for a laser describing method according to apparatus example 1 of the present invention.
  • FIG. 1 is a plan view and FIG. 2 is a front view.
  • the same numeral is given to the similar element of an apparatus in the related art of FIGS. 12 and 13 and description thereof will not be repeated.
  • a laser scribing apparatus of apparatus example 1 of the present invention is provided with inspection cameras 112 , 113 disposed respectively right before and right after of the processing head.
  • Two or more inspection cameras 112 , 113 are fixed respectively on both sides of a camera table 114 movable in the direction (i.e, the direction of a vertical arrow in FIG. 1 ) perpendicular to the substrate conveying direction (i.e., the direction of a leftward arrow in FIG. 1 ) as being synchronized with the movable table 106 to which the condenser lens 108 is disposed.
  • the substrate surface image can be captured right before and right after the scribing with the processing head by the inspection cameras 112 , 113 .
  • the inspection cameras 112 , 113 are each provided with an epi-illumination device (not illustrated) of a coaxial type or an oblique type such as ring-shaped illumination.
  • Steps 201 to 210 are approximately similar to those in the flowchart of the related art described in FIG. 14 .
  • the glass substrate 1 on which a transparent electrode layer 3 , or additionally an amorphous silicon layer 4 and a back-side electrode layer 5 (hereinafter, referred to collectively as “a film-formed layer” 21 ) is formed is conveyed and supplied on the conveying surface 102 .
  • a dust collector 109 is arranged right above a position of the glass substrate 1 irradiated with laser light through a condenser lens 108 so as to remove powder dust and the like generated by the laser processing.
  • the glass substrate 1 supplied to the conveying surface 102 is chucked by the glass substrate hold portion 104 so as to be reciprocated on the conveying surface 102 .
  • the movable table 106 having the processing head mounted and the camera table 114 are moved to a position for the first scribe line and N is set to be one as the first line (step 201 ).
  • the glass substrate 1 is conveyed for leftward processing and the surface image thereof is captured by the inspection camera 112 (i.e., IN-side) right before entering the processing head portion, and then, the image data is recorded in an image processing and recording device 120 (step 202 ).
  • the leftward processing (for the first line) is performed as the glass substrate 1 passes above the laser light irradiation position (i.e., the processing head) at a predetermined set speed, and then, the surface image thereof (i.e., the result of the processing) is captured by the inspection camera 113 (i.e., OUT-side) right thereafter.
  • the image data thereof is compared to the image data at the same portion recorded in the image processing and recording device 120 at an arithmetic device 130 .
  • the imperfect portion thereof is recorded in an imperfect portion recording device 140 (step 203 ).
  • the glass substrate 1 stops moving on the conveying surface 102 and the movable table 106 and the camera table 114 are moved to the position for the next scribe line (step 204 ).
  • the glass substrate 1 is conveyed for return processing and the surface image thereof is captured by the inspection camera 113 (i.e., IN-side this time) right before entering the processing head portion, and then, the image data is recorded in the image processing and recording device 121 (step 206 ).
  • the return processing (for the second line as being N+1) is performed as the glass substrate 1 passes above the laser light irradiation position at the predetermined set speed, and then, the surface image thereof (i.e., the result of the processing) is captured by the inspection camera 112 (i.e., OUT-side this time) right thereafter.
  • the image data thereof is compared to the image data at the same portion recorded in the image processing and recording device 121 at the arithmetic device 130 .
  • the imperfect portion thereof is recorded in the imperfect portion recording device 140 (step 207 ) and the glass substrate 1 stops (step 208 ).
  • step 205 or step 209 After processing of the predetermined number of lines set by a program is determined as being completed is step 205 or step 209 , the number of imperfections such as discontinuation or swell of the scribe lines and the imperfect positions thereof are displayed on an operational monitor (step 211 ). Based on automatic comparison with a threshold value of the number of imperfections previously set in an inspection program, instructions of categorization for ranking, no-processing, repair-processing or the like for the substrate having the final scribe line formed are displayed on the operational monitor (step 212 ).
  • step 213 it is determined whether or not the repair processing is performed. If required (i.e., in the case of “Yes”), a scribe line to bypass the position of the glass scratch 9 , the adhered foreign matter 10 or the like is formed (step 214 ) and the operation ends.
  • step 203 or step 207 an example to compare the image data of the inspection cameras of the IN-side to the image data of the OUT-side is described. However, if the image of the OUT-side is sufficiently clear, it is also possible to determine the imperfect portions only by the images of the OUT-side.
  • FIGS. 4 and 5 illustrate a laser scribing apparatus preferable for a laser describing method according to apparatus example 2 of the present invention.
  • FIG. 4 is a plan view and FIG. 5 is a front view.
  • the same numeral is given to the similar element of an apparatus in the related art in FIGS. 12 and 13 and description thereof will not be repeated.
  • a laser scribing apparatus of apparatus example 2 of the present invention is provided with a resistance tester 115 between adjacent solar cell units facing the film formed side of the glass substrate 1 and the inspection camera by one side of the processing head facing the glass face side of the glass substrate.
  • One or more inspection cameras 116 are fixed on the camera table 117 movable in the same direction as the movable table 106 (i.e., the direction perpendicular to the scribe lines 111 ). Resistance values between the adjacent scribe lines can be measured by the resistance tester 115 and the image of substrate surface after the final scribe line is formed can be captured by the inspection cameras 116 .
  • the inspection cameras 116 are each provided with an epi-illumination device (not illustrated) of a coaxial type or an oblique type such as ring-shaped illumination.
  • Steps 201 to 210 are approximately similar to those in the flowchart of the related art described in FIG. 14 .
  • the glass substrate 1 having a film-formed layer 21 is conveyed and supplied to the conveying surface 102 .
  • the dust collector 109 is arranged right above a position of the glass substrate 1 irradiated with laser light through a condenser lens 108 so as to be configured to be capable of removing powder dust and the like generated by the laser processing.
  • the glass substrate 1 supplied on the conveying surface 102 is chucked by the glass substrate hold portion 104 so as to be in a state of being capable of reciprocating on the conveying surface 102 .
  • the movable table 106 having the processing head mounted is moved to a position for the first scribe line and N is set to be one as the first line (step 201 ).
  • the glass substrate 1 is conveyed for leftward processing (step 222 ) and the leftward processing (for the first line) is performed as the glass substrate 1 passes above the laser light irradiation position at a predetermined set speed (step 223 ).
  • the glass substrate 1 stops moving on the conveying surface 102 and the movable table 106 is moved to the position for the next scribe line (step 204 ).
  • the glass substrate 1 is conveyed for return processing (step 226 ).
  • the return processing (for the second line as being N+1) is performed as the glass substrate 1 passes above the laser light irradiation position at the predetermined set speed (step 227 ) and the glass substrate 1 stops (step 208 ).
  • the operation ends when processing of the predetermined number of lines set by a program is completed.
  • the resistance values between adjacent scribe lines are measured with the resistance tester 115 disposed facing the film face side of the glass substrate 1 , so that presence or absence of short-circuit is detected (step 231 ).
  • the measured data is recorded at a recording device 123 .
  • the operational monitor displays presence or absence of a short-circuited line (i.e., an imperfect line) and the number and positions of short-circuited lines in the case of presence (step 232 ).
  • instructions of categorization for ranking, no-processing, repair-processing or the like for the substrate having the final scribe line formed are displayed on the operational monitor (step 233 ). Then, it is determined whether or not a short-circuited line exists (step 234 ). The operation ends when a short-circuited line does not exist.
  • step 235 it is determined whether or not the repair processing is performed if necessary.
  • the position information of the short-circuited line detected by the resistance tester 115 recorded in the recording device 123 is transmitted via the arithmetic device 130 to a drive portion of the movable table 117 to which the inspection cameras 116 are mounted.
  • the inspection camera 116 is moved to the position of the short-circuited line based on the position information from the arithmetic device 130 .
  • the inspection camera 116 is focused on the scribe line formed on the film formed side, that is, formed in the corresponding layer and the short-circuited line image is captured as conveying and moving the glass substrate 1 , so that the imperfect portion is found based on the image information recorded in the image processing and recording device 122 (step 236 ).
  • the focal point is to be matched to a cause creating the imperfection such as a glass scratch 9 , a adhered foreign matter 10 , an air-bubble 15 , or the like. In this manner, the cause is detected (step 237 ).
  • the position, size, shape and the like thereof are recorded in the image processing and recording device 122 and the detecting operation ends.
  • the focal point which is at the focal length 20 from the camera, is to be adjusted by automatically moving the inspection camera 116 in the vertical direction (upward and downward) against the glass substrate (as illustrated as A to D in FIG. 17 ).
  • the imperfect portion is displayed on the operational monitor (step 238 ).
  • the repair processing is performed with the same apparatus to form a new scribe line to bypass the position of the glass scratch 9 , the adhered foreign matter 10 , the air-bubble, or the like based on the information from the image processing and recording device 122 (step 239 ) and the operation ends.
  • the size of the air-bubble 15 in the glass substrate can be measured as well as the size of the glass scratch 9 or the adhered foreign matter 10 on the glass substrate surface.
  • FIG. 7 is an example of the first repair processing with the laser scribing according to the present invention.
  • a scribe line 8 b having an imperfect portion 9 an appropriate distance between a repair line and the scribe line 8 b is determined by the accurate position, size, shape and the like of the imperfect portion 9 recorded in the imperfect portion recording device 140 or the image processing and recording device 122 .
  • a linear scribe line 8 c for repairing is newly formed at a position shifted by the determined distance from the imperfect portion 9 .
  • an appropriate distance between a repair line and the scribe line 6 b is determined by the accurate position, size, shape and the like of the imperfect portion 10 recorded in the imperfect portion recording device 140 or the image processing and recording device 122 . Then, a linear scribe line 6 c for repairing is newly formed at a position shifted by the determined distance from the imperfect portion 10 .
  • the bypass (repair) scribe lines 8 c, 6 c are preferably formed each near the side of the corresponding scribe line opposite to the scribe line 7 .
  • the repair processing of the present example only forms a new linear scribe line as being easily controlled.
  • repair processing time can be shortened in the case that a plural repair lines are necessary on the same line.
  • effective photovoltaic area of the amorphous silicon layer is decreased a little.
  • FIG. 8 is an example of the second repair processing with the laser scribing according to the present invention.
  • a length of a repair line 8 d and a distance between the repair line 8 d and the scribe line 8 b are appropriately determined by the accurate position, size, shape and the like of the imperfect portion 9 recorded in the imperfect portion recording device 140 or the image processing and recording device 122 .
  • the rectangular scribe line 8 d for repairing is formed to bypass the imperfect portion 9 .
  • a length of a repair line 6 d and a distance between the repair line 6 d and the scribe line 6 b are appropriately determined by the accurate position, size, shape and the like of the imperfect portion 10 recorded in the imperfect portion recording device 140 or the image processing and recording device 122 .
  • the rectangular scribe line 6 d for repairing is formed to bypass the imperfect portion 10 .
  • the bypass scribe lines 8 d, 6 d are preferably formed each near the side of the corresponding scribe line opposite to the scribe line 7 .
  • the repair processing of the present example only forms a rectangular scribe line to bypass the imperfect portion. Accordingly, the repair processing time can be shortened, and the decrease in photovoltaic efficiency can be suppressed to the minimum because the present example causes little decrease in effective photovoltaic area of the amorphous silicon layer.
  • FIG. 9 is an example of the third repair processing with laser scribing according to the present invention.
  • an appropriate diameter of a repair line 8 e is determined by the accurate position, size, shape and the like of the imperfect portion 9 recorded in the imperfect portion recording device 140 or the image processing and recording device 122 .
  • the circular scribe line 8 e is formed for repairing so that the imperfect portion 9 is to be the center thereof.
  • an appropriate diameter of a repair line is determined by the accurate position, size, shape and the like of the imperfect portion 10 recorded in the imperfect portion recording device 140 or the image processing and recording device 122 .
  • the circular scribe line 6 e is formed for repairing so that the imperfect portion 10 is to be the center thereof.
  • the circular scribe line 8 e being centered on the imperfect portion 9 overlaps with the imperfect portion 9 in the lower side of the circle, for example.
  • the circular scribe lines 8 e, 6 e are each required to have a radius being smaller than the distance between the corresponding scribe line and the scribe line 7 when the center of the trepanning circle is set on the scribe line.
  • the repair processing of the present example may employ trepanning which is an often used control method of a pair of galvanometer mirrors being as the reflection mirrors 107 , the decrease in photovoltaic efficiency can be suppressed to the minimum as being easily controlled.
  • the present example also causes little decrease in effective photovoltaic area of the amorphous silicon layer 4 .

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US20130034294A1 (en) * 2011-08-05 2013-02-07 Joerg Heitzig Method for the Linear Structuring of a Coated Substrate for the Production of Thin-Film Solar Cell Modules
US20140055603A1 (en) * 2012-07-25 2014-02-27 Shenzhen China Star Optoelectronics Technology Co., Ltd. Automatic optical inspection device
US20170014947A1 (en) * 2015-07-17 2017-01-19 Disco Corporation Laser processing apparatus
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CN112243537A (zh) * 2018-04-06 2021-01-19 太阳能公司 用于基板的激光辅助金属化的系统
US11276785B2 (en) 2018-04-06 2022-03-15 Sunpower Corporation Laser assisted metallization process for solar cell fabrication
US11362234B2 (en) 2018-04-06 2022-06-14 Sunpower Corporation Local patterning and metallization of semiconductor structures using a laser beam
US20220314369A1 (en) * 2021-03-31 2022-10-06 Yangtze Memory Technologies Co., Ltd. Laser system for dicing semiconductor structure and operation method thereof
US11646387B2 (en) 2018-04-06 2023-05-09 Maxeon Solar Pte. Ltd. Laser assisted metallization process for solar cell circuit formation
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US20110220624A1 (en) * 2010-03-10 2011-09-15 Marketech International Corp. Method for use of a device for cutting the peripheral isolation lines of solar panels
US20130034294A1 (en) * 2011-08-05 2013-02-07 Joerg Heitzig Method for the Linear Structuring of a Coated Substrate for the Production of Thin-Film Solar Cell Modules
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CN102437233A (zh) * 2011-10-19 2012-05-02 东莞宏威数码机械有限公司 太阳能电池板激光刻线检测系统及检测方法
US20140055603A1 (en) * 2012-07-25 2014-02-27 Shenzhen China Star Optoelectronics Technology Co., Ltd. Automatic optical inspection device
US9793421B2 (en) 2014-12-05 2017-10-17 Solarcity Corporation Systems, methods and apparatus for precision automation of manufacturing solar panels
US20170014947A1 (en) * 2015-07-17 2017-01-19 Disco Corporation Laser processing apparatus
US10207362B2 (en) * 2015-07-17 2019-02-19 Disco Corporation Laser processing apparatus
WO2019195805A1 (en) * 2018-04-06 2019-10-10 Sunpower Corporation Systems for laser assisted metallization of substrates
CN112243537A (zh) * 2018-04-06 2021-01-19 太阳能公司 用于基板的激光辅助金属化的系统
US11276785B2 (en) 2018-04-06 2022-03-15 Sunpower Corporation Laser assisted metallization process for solar cell fabrication
US11362234B2 (en) 2018-04-06 2022-06-14 Sunpower Corporation Local patterning and metallization of semiconductor structures using a laser beam
US11362220B2 (en) 2018-04-06 2022-06-14 Sunpower Corporation Local metallization for semiconductor substrates using a laser beam
US11646387B2 (en) 2018-04-06 2023-05-09 Maxeon Solar Pte. Ltd. Laser assisted metallization process for solar cell circuit formation
US11664472B2 (en) 2018-04-06 2023-05-30 Maxeon Solar Pte. Ltd. Laser assisted metallization process for solar cell stringing
US11682737B2 (en) 2018-04-06 2023-06-20 Maxeon Solar Pte. Ltd. Laser assisted metallization process for solar cell fabrication
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