US20110012150A1 - Light emitting device and method for fabricating the same - Google Patents

Light emitting device and method for fabricating the same Download PDF

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Publication number
US20110012150A1
US20110012150A1 US12/674,356 US67435608A US2011012150A1 US 20110012150 A1 US20110012150 A1 US 20110012150A1 US 67435608 A US67435608 A US 67435608A US 2011012150 A1 US2011012150 A1 US 2011012150A1
Authority
US
United States
Prior art keywords
semiconductor layer
layer
emitting device
light
light extraction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/674,356
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English (en)
Inventor
Sun Kyung Kim
Hyun Kyong Cho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
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LG Innotek Co Ltd
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Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Assigned to LG INNOTEK CO., LTD. reassignment LG INNOTEK CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KIM, SUN KYUNG, CHO, HYUN KYONG
Publication of US20110012150A1 publication Critical patent/US20110012150A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
US12/674,356 2007-08-30 2008-08-26 Light emitting device and method for fabricating the same Abandoned US20110012150A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2007-0087764 2007-08-30
KR1020070087764A KR100921466B1 (ko) 2007-08-30 2007-08-30 질화물계 발광 소자 및 그 제조방법
PCT/KR2008/004997 WO2009028860A2 (en) 2007-08-30 2008-08-26 Light emitting device and method for fabricating the same

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/004997 A-371-Of-International WO2009028860A2 (en) 2007-08-30 2008-08-26 Light emitting device and method for fabricating the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/467,882 Continuation US9647173B2 (en) 2007-08-30 2012-05-09 Light emitting device (LED) having an electrode hole extending from a nonconductive semiconductor layer to a surface of a conductive semiconductor layer

Publications (1)

Publication Number Publication Date
US20110012150A1 true US20110012150A1 (en) 2011-01-20

Family

ID=40388007

Family Applications (2)

Application Number Title Priority Date Filing Date
US12/674,356 Abandoned US20110012150A1 (en) 2007-08-30 2008-08-26 Light emitting device and method for fabricating the same
US13/467,882 Active US9647173B2 (en) 2007-08-30 2012-05-09 Light emitting device (LED) having an electrode hole extending from a nonconductive semiconductor layer to a surface of a conductive semiconductor layer

Family Applications After (1)

Application Number Title Priority Date Filing Date
US13/467,882 Active US9647173B2 (en) 2007-08-30 2012-05-09 Light emitting device (LED) having an electrode hole extending from a nonconductive semiconductor layer to a surface of a conductive semiconductor layer

Country Status (6)

Country Link
US (2) US20110012150A1 (ko)
EP (1) EP2188850B1 (ko)
JP (2) JP5385275B2 (ko)
KR (1) KR100921466B1 (ko)
CN (1) CN101790801B (ko)
WO (1) WO2009028860A2 (ko)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100142578A1 (en) * 2008-12-08 2010-06-10 Canon Kabushiki Kaisha Surface-emitting laser including two-dimensional photonic crystal
US20120091499A1 (en) * 2008-03-25 2012-04-19 Kabushiki Kaisha Toshiba Semiconductor light-emitting element and process for production thereof
US20120273830A1 (en) * 2011-04-28 2012-11-01 Advanced Optoelectronic Technology, Inc. Light emitting diode chip and method of manufacturing the same
US20130001616A1 (en) * 2011-06-30 2013-01-03 Shin Kim Light emitting device, light emitting device package including the same and lighting system
US20130256716A1 (en) * 2012-03-30 2013-10-03 Hon Hai Precision Industry Co., Ltd. White light emitting diodes
US8841220B2 (en) 2011-06-24 2014-09-23 Panasonic Corporation Gallium nitride based semiconductor light-emitting element, light source, and method for forming unevenness structure
US20180342649A1 (en) * 2015-06-05 2018-11-29 Sensor Electronic Technology, Inc. Heterostructure with Stress Controlling Layer

Families Citing this family (12)

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US7985979B2 (en) * 2007-12-19 2011-07-26 Koninklijke Philips Electronics, N.V. Semiconductor light emitting device with light extraction structures
KR20100050430A (ko) * 2008-11-04 2010-05-13 삼성엘이디 주식회사 미세 패턴을 갖는 발광장치
KR101072200B1 (ko) * 2009-03-16 2011-10-10 엘지이노텍 주식회사 발광소자 및 그 제조방법
EP2249406B1 (en) * 2009-05-04 2019-03-06 LG Innotek Co., Ltd. Light emitting diode
KR101134731B1 (ko) * 2009-10-22 2012-04-13 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101134802B1 (ko) 2010-02-01 2012-04-13 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
TWI505500B (zh) * 2012-06-07 2015-10-21 Lextar Electronics Corp 發光二極體及其製造方法
CN106952989A (zh) * 2017-03-17 2017-07-14 京东方科技集团股份有限公司 发光二极管、显示基板和显示装置
US11721784B2 (en) 2017-03-30 2023-08-08 Vuereal Inc. High efficient micro devices
US11600743B2 (en) 2017-03-30 2023-03-07 Vuereal Inc. High efficient microdevices
WO2018178951A1 (en) * 2017-03-30 2018-10-04 Vuereal Inc. Vertical solid-state devices
US11942571B2 (en) * 2019-04-22 2024-03-26 Lumileds Llc LED with active region disposed within an optical cavity defined by an embedded nanostructured layer and a reflector

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US20060237734A1 (en) * 2003-08-29 2006-10-26 Johannes Baur Thin-layer light-emitting diode chip and method for the production thereof
US20060273324A1 (en) * 2003-07-28 2006-12-07 Makoto Asai Light-emitting diode and process for producing the same
US7173289B1 (en) * 2005-09-08 2007-02-06 Formosa Epitaxy Incorporation Light emitting diode structure having photonic crystals
US20070267644A1 (en) * 2005-06-16 2007-11-22 Leem See J Light emitting diode
US20100230685A1 (en) * 2009-03-16 2010-09-16 Lg Innotek Co., Ltd. Light emitting device, light emitting device package and lighting system including the same
US20100308363A1 (en) * 2007-10-29 2010-12-09 Sun Kyung Kim Light emitting device having light extraction structure and method for manufacturing the same
US20110095332A1 (en) * 2009-10-22 2011-04-28 Sung Min Hwang Light emitting device, light emitting device package, and lighting system

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US237734A (en) * 1881-02-15 field
US5779924A (en) 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
JP3914615B2 (ja) * 1997-08-19 2007-05-16 住友電気工業株式会社 半導体発光素子及びその製造方法
JP3595276B2 (ja) * 2001-03-21 2004-12-02 三菱電線工業株式会社 紫外線発光素子
KR101030068B1 (ko) 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
US7098589B2 (en) 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US7211831B2 (en) * 2003-04-15 2007-05-01 Luminus Devices, Inc. Light emitting device with patterned surfaces
JP2005302804A (ja) * 2004-04-07 2005-10-27 Toyoda Gosei Co Ltd 発光ダイオード及びその製造方法
JP2005150675A (ja) * 2003-11-18 2005-06-09 Itswell Co Ltd 半導体発光ダイオードとその製造方法
US7250635B2 (en) 2004-02-06 2007-07-31 Dicon Fiberoptics, Inc. Light emitting system with high extraction efficency
JP4368225B2 (ja) 2004-03-10 2009-11-18 三洋電機株式会社 窒化物系半導体発光素子の製造方法
JP2006049855A (ja) * 2004-06-28 2006-02-16 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法
JP4812369B2 (ja) * 2004-08-27 2011-11-09 京セラ株式会社 発光素子の製造方法
TWI247441B (en) * 2005-01-21 2006-01-11 United Epitaxy Co Ltd Light emitting diode and fabricating method thereof
CN100349332C (zh) * 2005-01-26 2007-11-14 北京大学 基于二维光子晶体的光二极管及其制备方法
US20060204865A1 (en) 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices
JP2006278751A (ja) * 2005-03-29 2006-10-12 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光素子
KR100638730B1 (ko) * 2005-04-14 2006-10-30 삼성전기주식회사 수직구조 3족 질화물 발광 소자의 제조 방법
CN1874012A (zh) * 2005-06-03 2006-12-06 北京大学 高亮度GaN基发光管芯片及其制备方法
KR100926319B1 (ko) * 2005-07-12 2009-11-12 한빔 주식회사 광추출 효율이 개선된 발광다이오드 소자 및 이의 제조방법
US8674375B2 (en) * 2005-07-21 2014-03-18 Cree, Inc. Roughened high refractive index layer/LED for high light extraction
JP4778745B2 (ja) 2005-07-27 2011-09-21 パナソニック株式会社 半導体発光装置及びその製造方法
US8729580B2 (en) * 2005-12-06 2014-05-20 Toshiba Techno Center, Inc. Light emitter with metal-oxide coating
JP2007207981A (ja) 2006-02-01 2007-08-16 Rohm Co Ltd 窒化物半導体発光素子の製造方法
JP2007214276A (ja) * 2006-02-08 2007-08-23 Mitsubishi Chemicals Corp 発光素子
KR100844722B1 (ko) 2006-03-07 2008-07-07 엘지전자 주식회사 나노콘 성장방법 및 이를 이용한 발광 다이오드의제조방법
KR100736623B1 (ko) 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
US7929881B2 (en) 2006-12-11 2011-04-19 Canon Kabushiki Kaisha Process cartridge and electrophotographic image forming apparatus
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US713866A (en) * 1902-05-31 1902-11-18 William M Fenn Cultivator and weeder.
US6495862B1 (en) * 1998-12-24 2002-12-17 Kabushiki Kaisha Toshiba Nitride semiconductor LED with embossed lead-out surface
US20060273324A1 (en) * 2003-07-28 2006-12-07 Makoto Asai Light-emitting diode and process for producing the same
US20060237734A1 (en) * 2003-08-29 2006-10-26 Johannes Baur Thin-layer light-emitting diode chip and method for the production thereof
US20060054919A1 (en) * 2004-08-27 2006-03-16 Kyocera Corporation Light-emitting element, method for manufacturing the same and lighting equipment using the same
US20070267644A1 (en) * 2005-06-16 2007-11-22 Leem See J Light emitting diode
US7173289B1 (en) * 2005-09-08 2007-02-06 Formosa Epitaxy Incorporation Light emitting diode structure having photonic crystals
US20100308363A1 (en) * 2007-10-29 2010-12-09 Sun Kyung Kim Light emitting device having light extraction structure and method for manufacturing the same
US20100230685A1 (en) * 2009-03-16 2010-09-16 Lg Innotek Co., Ltd. Light emitting device, light emitting device package and lighting system including the same
US20110095332A1 (en) * 2009-10-22 2011-04-28 Sung Min Hwang Light emitting device, light emitting device package, and lighting system

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120091499A1 (en) * 2008-03-25 2012-04-19 Kabushiki Kaisha Toshiba Semiconductor light-emitting element and process for production thereof
US8450768B2 (en) * 2008-03-25 2013-05-28 Kabushiki Kaisha Toshiba Semiconductor light-emitting element and process for production thereof
US20100142578A1 (en) * 2008-12-08 2010-06-10 Canon Kabushiki Kaisha Surface-emitting laser including two-dimensional photonic crystal
US20120273830A1 (en) * 2011-04-28 2012-11-01 Advanced Optoelectronic Technology, Inc. Light emitting diode chip and method of manufacturing the same
US8461619B2 (en) * 2011-04-28 2013-06-11 Advanced Optoelectronic Technology, Inc. Light emitting diode chip and method of manufacturing the same
US8841220B2 (en) 2011-06-24 2014-09-23 Panasonic Corporation Gallium nitride based semiconductor light-emitting element, light source, and method for forming unevenness structure
US20130001616A1 (en) * 2011-06-30 2013-01-03 Shin Kim Light emitting device, light emitting device package including the same and lighting system
US8536606B2 (en) * 2011-06-30 2013-09-17 Lg Innotek Co., Ltd. Light emitting device, light emitting device package including the same and lighting system
US20130256716A1 (en) * 2012-03-30 2013-10-03 Hon Hai Precision Industry Co., Ltd. White light emitting diodes
US8796720B2 (en) * 2012-03-30 2014-08-05 Tsinghua University White light emitting diodes
US20180342649A1 (en) * 2015-06-05 2018-11-29 Sensor Electronic Technology, Inc. Heterostructure with Stress Controlling Layer

Also Published As

Publication number Publication date
US20120217509A1 (en) 2012-08-30
CN101790801A (zh) 2010-07-28
WO2009028860A3 (en) 2009-09-11
WO2009028860A2 (en) 2009-03-05
JP5816240B2 (ja) 2015-11-18
KR20090022424A (ko) 2009-03-04
US9647173B2 (en) 2017-05-09
JP5385275B2 (ja) 2014-01-08
KR100921466B1 (ko) 2009-10-13
EP2188850B1 (en) 2018-10-31
JP2014017520A (ja) 2014-01-30
EP2188850A2 (en) 2010-05-26
CN101790801B (zh) 2014-10-01
EP2188850A4 (en) 2011-01-12
JP2010538452A (ja) 2010-12-09

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AS Assignment

Owner name: LG INNOTEK CO., LTD., KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KIM, SUN KYUNG;CHO, HYUN KYONG;SIGNING DATES FROM 20081027 TO 20081227;REEL/FRAME:023979/0014

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION