US20100167457A1 - Laser firing apparatus for high efficiency solar cell and fabrication method thereof - Google Patents

Laser firing apparatus for high efficiency solar cell and fabrication method thereof Download PDF

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Publication number
US20100167457A1
US20100167457A1 US12/646,659 US64665909A US2010167457A1 US 20100167457 A1 US20100167457 A1 US 20100167457A1 US 64665909 A US64665909 A US 64665909A US 2010167457 A1 US2010167457 A1 US 2010167457A1
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US
United States
Prior art keywords
solar cell
laser
semiconductor substrate
electrode
cell according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/646,659
Other languages
English (en)
Inventor
Jong Hwan Kim
Hwa Nyeon Kim
Ju Hwan Yun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Assigned to LG ELECTRONICS INC. reassignment LG ELECTRONICS INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KIM, HWA NYEON, KIM, JONG HWAN, YUN, JU HWAN
Publication of US20100167457A1 publication Critical patent/US20100167457A1/en
Priority to US13/292,887 priority Critical patent/US8778720B2/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0619—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams with spots located on opposed surfaces of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0838—Devices involving movement of the workpiece in at least one axial direction by using an endless conveyor belt
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the fabrication of the solar cell where the antireflective layer and the front electrode unit are formed on the semiconductor substrate and the back surface field (BSF) layer, the back passivation layer, and the back electrode unit are sequentially formed is completed.
  • the first laser generating unit and the second laser generating unit are disposed at a position opposite to each other, but are not limited to the position.
  • the first laser generating unit and the second laser generating unit are arranged on a line such that the laser generated from the first laser generating unit and the laser generated from the second laser generating unit are irradiated at different times, and the front electrode unit and back electrode unit of the solar cell are not simultaneously fired.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
US12/646,659 2008-12-30 2009-12-23 Laser firing apparatus for high efficiency solar cell and fabrication method thereof Abandoned US20100167457A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/292,887 US8778720B2 (en) 2008-12-30 2011-11-09 Laser firing apparatus for high efficiency solar cell and fabrication method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0137176 2008-12-30
KR1020080137176A KR101000067B1 (ko) 2008-12-30 2008-12-30 고효율 태양전지용 레이저 소성장치 및 고효율 태양전지 제조방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/292,887 Division US8778720B2 (en) 2008-12-30 2011-11-09 Laser firing apparatus for high efficiency solar cell and fabrication method thereof

Publications (1)

Publication Number Publication Date
US20100167457A1 true US20100167457A1 (en) 2010-07-01

Family

ID=42285436

Family Applications (2)

Application Number Title Priority Date Filing Date
US12/646,659 Abandoned US20100167457A1 (en) 2008-12-30 2009-12-23 Laser firing apparatus for high efficiency solar cell and fabrication method thereof
US13/292,887 Expired - Fee Related US8778720B2 (en) 2008-12-30 2011-11-09 Laser firing apparatus for high efficiency solar cell and fabrication method thereof

Family Applications After (1)

Application Number Title Priority Date Filing Date
US13/292,887 Expired - Fee Related US8778720B2 (en) 2008-12-30 2011-11-09 Laser firing apparatus for high efficiency solar cell and fabrication method thereof

Country Status (5)

Country Link
US (2) US20100167457A1 (ko)
EP (1) EP2382668A4 (ko)
JP (1) JP2012514342A (ko)
KR (1) KR101000067B1 (ko)
WO (1) WO2010077018A2 (ko)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130164887A1 (en) * 2011-12-23 2013-06-27 Lg Electronics Inc. Method for manufacturing a solar cell
CN105185850A (zh) * 2015-08-17 2015-12-23 英利集团有限公司 选择性背场结构的制备工艺与n型太阳能电池的制备方法
EP2905812A4 (en) * 2012-10-04 2016-05-04 Shinetsu Chemical Co SOLAR CELL PRODUCTION PROCESS
WO2018060181A1 (de) * 2016-09-28 2018-04-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. Verfahren und vorrichtung zur bearbeitung eines halbleiterbauelementes mit zumindest einer halbleiterschicht
CN114927599A (zh) * 2022-05-18 2022-08-19 东方日升（常州）新能源有限公司 一种太阳能电池及其制备方法以及激光退火装置

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101172632B1 (ko) * 2010-12-08 2012-08-08 현대중공업 주식회사 태양전지의 전면전극 치밀화 방법
KR101860919B1 (ko) * 2011-12-16 2018-06-29 엘지전자 주식회사 태양 전지 및 이의 제조 방법
TWI491054B (zh) * 2012-08-08 2015-07-01 Sino American Silicon Prod Inc 太陽能電池之製造方法
US9882071B2 (en) 2016-07-01 2018-01-30 Sunpower Corporation Laser techniques for foil-based metallization of solar cells
MA54673A1 (fr) 2018-01-08 2022-08-31 Regeneron Pharma Stéroïdes et leurs conjugués-anticorps
EA202191430A1 (ru) 2018-11-20 2021-11-29 Регенерон Фармасьютикалз, Инк. Производные бис-октагидрофенантренкарбоксамида и их белковые конъюгаты
CN118027137A (zh) 2018-12-21 2024-05-14 里珍纳龙药品有限公司 微管溶素及蛋白质-微管溶素偶联物
US11666658B2 (en) 2018-12-21 2023-06-06 Regeneran Pharmaceuticals, Inc. Rifamycin analogs and antibody-drug conjugates thereof
SG11202107212QA (en) 2019-01-08 2021-07-29 Regeneron Pharma Traceless linkers and protein-conjugates thereof
WO2020172475A1 (en) 2019-02-21 2020-08-27 Regeneron Pharmaceuticals, Inc. Methods of treating ocular cancer using anti-met antibodies and bispecific antigen binding molecules that bind met
US11814428B2 (en) 2019-09-19 2023-11-14 Regeneron Pharmaceuticals, Inc. Anti-PTCRA antibody-drug conjugates and uses thereof
EP4093440A1 (en) 2020-01-24 2022-11-30 Regeneron Pharmaceuticals, Inc. Protein-antiviral compound conjugates
CN115968304A (zh) 2020-04-16 2023-04-14 瑞泽恩制药公司 狄尔斯-阿尔德缀合方法
US20230069722A1 (en) 2020-06-24 2023-03-02 Regeneron Pharmaceuticals, Inc. Tubulysins and protein-tubulysin conjugates
CN116615251A (zh) 2020-09-14 2023-08-18 瑞泽恩制药公司 包含glp1肽模拟物的抗体-药物缀合物及其用途
CA3190569A1 (en) 2020-10-22 2022-04-28 Christopher Daly Anti-fgfr2 antibodies and methods of use thereof
US20230287138A1 (en) 2022-01-12 2023-09-14 Regneron Pharmaceuticals, Inc. Protein-drug conjugates comprising camptothecin analogs and methods of use thereof
WO2023137443A1 (en) 2022-01-14 2023-07-20 Regeneron Pharmaceuticals, Inc. Verrucarin a derivatives and antibody drug conjugates thereof
US20230330254A1 (en) 2022-03-11 2023-10-19 Regeneron Pharmaceuticals, Inc. Anti-glp1r antibody-tethered drug conjugates comprising glp1 peptidomimetics and uses thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423929B1 (en) * 1998-07-14 2002-07-23 Siemens Aktiengesellschaft Device for the laser processing of flat workpieces
US6888560B2 (en) * 2002-06-20 2005-05-03 Samsung Electronics Co., Ltd. Apparatus to generate a laser beam detect signal
US6927109B1 (en) * 1999-07-05 2005-08-09 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus laser irradiation method, semiconductor device and method of manufacturing a semiconductor device
US20080296567A1 (en) * 2007-06-04 2008-12-04 Irving Lyn M Method of making thin film transistors comprising zinc-oxide-based semiconductor materials

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818976A (ja) * 1981-07-27 1983-02-03 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JP2616767B2 (ja) * 1986-08-28 1997-06-04 株式会社 半導体エネルギー研究所 光処理方法
JPH01125988A (ja) * 1987-11-11 1989-05-18 Hitachi Ltd 太陽電池素子の製造方法
JPH04214675A (ja) * 1990-12-13 1992-08-05 Sanyo Electric Co Ltd 太陽電池の製造方法
US6277679B1 (en) * 1998-11-25 2001-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing thin film transistor
KR100611040B1 (ko) * 2001-12-27 2006-08-09 엘지.필립스 엘시디 주식회사 레이저 열처리 장치
JP2006038999A (ja) * 2004-07-23 2006-02-09 Sumitomo Electric Ind Ltd レーザ照射を用いた導電性回路形成方法と導電性回路
SG156607A1 (en) * 2004-07-30 2009-11-26 Mitsuboshi Diamond Ind Co Ltd Method for forming median crack in substrate and apparatus for forming median crack in substrate
ATE510306T1 (de) * 2005-02-18 2011-06-15 Clean Venture 21 Corp Matrixanordnung sphärischer solarzellen und ihr herstellungsverfahren
TWI334649B (en) * 2005-09-27 2010-12-11 Lg Chemical Ltd Method for forming buried contact electrode of semiconductor device having pn junction and optoelectronic semiconductor device using the same
JP2007121173A (ja) * 2005-10-31 2007-05-17 Denso Corp ガスセンサ素子及びその製造方法
JP4798433B2 (ja) * 2006-02-08 2011-10-19 株式会社クリーンベンチャー２１ 光電変換装置の製造方法
DE102006040352B3 (de) * 2006-08-29 2007-10-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Aufbringen von elektrischen Kontakten auf halbleitende Substrate, halbleitendes Substrat und Verwendung des Verfahrens
JP2008130590A (ja) 2006-11-16 2008-06-05 Sumitomo Heavy Ind Ltd 複合処理装置、及び、複合処理方法
DE102007010872A1 (de) * 2007-03-06 2008-09-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Präzisionsbearbeitung von Substraten und dessen Verwendung
KR20100015622A (ko) * 2007-03-16 2010-02-12 비피 코포레이션 노쓰 아메리카 인코포레이티드 태양 전지
KR100865960B1 (ko) 2007-04-03 2008-10-30 경희대학교 산학협력단 실리콘 슬러리를 이용한 전자 소자 및 그 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423929B1 (en) * 1998-07-14 2002-07-23 Siemens Aktiengesellschaft Device for the laser processing of flat workpieces
US6927109B1 (en) * 1999-07-05 2005-08-09 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus laser irradiation method, semiconductor device and method of manufacturing a semiconductor device
US6888560B2 (en) * 2002-06-20 2005-05-03 Samsung Electronics Co., Ltd. Apparatus to generate a laser beam detect signal
US20080296567A1 (en) * 2007-06-04 2008-12-04 Irving Lyn M Method of making thin film transistors comprising zinc-oxide-based semiconductor materials

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130164887A1 (en) * 2011-12-23 2013-06-27 Lg Electronics Inc. Method for manufacturing a solar cell
US8927313B2 (en) * 2011-12-23 2015-01-06 Lg Electronics Inc. Method for manufacturing a solar cell
EP2905812A4 (en) * 2012-10-04 2016-05-04 Shinetsu Chemical Co SOLAR CELL PRODUCTION PROCESS
US9614117B2 (en) 2012-10-04 2017-04-04 Shin-Etsu Chemical Co., Ltd. Solar cell manufacturing method
CN105185850A (zh) * 2015-08-17 2015-12-23 英利集团有限公司 选择性背场结构的制备工艺与n型太阳能电池的制备方法
WO2018060181A1 (de) * 2016-09-28 2018-04-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. Verfahren und vorrichtung zur bearbeitung eines halbleiterbauelementes mit zumindest einer halbleiterschicht
CN114927599A (zh) * 2022-05-18 2022-08-19 东方日升（常州）新能源有限公司 一种太阳能电池及其制备方法以及激光退火装置

Also Published As

Publication number Publication date
JP2012514342A (ja) 2012-06-21
WO2010077018A3 (en) 2010-10-07
EP2382668A2 (en) 2011-11-02
KR20100078814A (ko) 2010-07-08
KR101000067B1 (ko) 2010-12-10
WO2010077018A2 (en) 2010-07-08
EP2382668A4 (en) 2012-12-26
US8778720B2 (en) 2014-07-15
US20120058592A1 (en) 2012-03-08

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AS Assignment

Owner name: LG ELECTRONICS INC.,KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KIM, JONG HWAN;KIM, HWA NYEON;YUN, JU HWAN;REEL/FRAME:023748/0366

Effective date: 20091218

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION