JP2012514342A - 太陽電池用レーザ焼成装置及び太陽電池の製造方法 - Google Patents
太陽電池用レーザ焼成装置及び太陽電池の製造方法 Download PDFInfo
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Abstract
【解決手段】太陽電池用半導体基板(205)に形成される電極領域にレーザを照射して電極領域を熱処理する、少なくとも1つのレーザ生成手段(201,202)を備えることを特徴とする。また、太陽電池の製造方法は、太陽電池用半導体基板に電極物質を形成し、電極物質をレーザ照射によって熱処理するステップとを含むことを特徴とする。
【選択図】図2
Description
Claims (21)
- 太陽電池用半導体基板に形成される電極領域にレーザを照射して前記電極領域を熱処理する、少なくとも1つのレーザ生成手段を備えることを特徴とする太陽電池用レーザ焼成装置。
- 前記レーザは、ライン形態のレーザであることを特徴とする請求項1に記載の太陽電池用レーザ焼成装置。
- 前記レーザは、スリットによって形成されるライン形態のレーザであることを特徴とする請求項1に記載の太陽電池用レーザ焼成装置。
- 前記少なくとも1つのレーザ生成手段は、複数個のレーザ生成手段がライン状で配列されることを特徴とする請求項1に記載の太陽電池用レーザ焼成装置。
- 前記少なくとも1つのレーザ生成手段は、前記半導体基板の前面を照射するように位置する第1のレーザ生成手段と、前記半導体基板の後面を照射するように位置する第2のレーザ生成手段とを備え、前記第1のレーザ生成手段と前記第2のレーザ生成手段とが互いに対向するように配置されることを特徴とする請求項1に記載の太陽電池用レーザ焼成装置。
- 前記少なくとも1つのレーザ生成手段は、前記半導体基板の一面を照射するように位置し、互いに並んで配置される第1のレーザ生成手段と第2のレーザ生成手段とを備えることを特徴とする請求項1に記載の太陽電池用レーザ焼成装置。
- 前記太陽電池用レーザ焼成装置は、前記半導体基板が定着するステージをさらに備えることを特徴とする請求項1に記載の太陽電池用レーザ焼成装置。
- 前記ステージは、前記半導体基板を移動させる少なくとも1つのベルト型移動手段であることを特徴とする請求項7に記載の太陽電池用レーザ焼成装置。
- 前記少なくとも1つのベルト型移動手段は、第1のベルト型移動手段と第2のベルト型移動手段とからなることを特徴とする請求項8に記載の太陽電池用レーザ焼成装置。
- 太陽電池を製造する方法であって、
太陽電池用半導体基板に電極物質を形成するステップと、
前記電極物質をレーザ照射によって熱処理して電極を形成するステップと、
を含み、
前記電極物質は、電極ペースト、電極インキ、及び電極用エアロゾルを備えることを特徴とする太陽電池の製造方法。 - 前記電極物質は、前面電極パターンによって前記半導体基板の前面に形成されることを特徴とする請求項10に記載の太陽電池の製造方法。
- 前記前面電極用物質は、前記レーザ照射によって600℃〜1000℃の温度で熱処理されることを特徴とする請求項11に記載の太陽電池の製造方法。
- 前記電極物質は、後面電極パターンによって前記半導体基板の後面に形成されることを特徴とする請求項10に記載の太陽電池の製造方法。
- 前記後面電極パターンによって形成される前記後面電極用物質は、前記レーザ照射によって450℃〜750℃の温度で熱処理することを特徴とする請求項13に記載の太陽電池の製造方法。
- 前記半導体基板の後面に形成される前記後面電極用物質は、熱処理によって前記後面電極に形成され、前記半導体基板の後面と後面電極との間の界面にBSF層が形成されることを特徴とする請求項13に記載の太陽電池の製造方法。
- 前記前面電極用物質及び前記後面電極用物質は、同時に照射されるレーザによって同時に焼成されることを特徴とする請求項11に記載の太陽電池の製造方法。
- 前記前面電極用物質及び前記後面電極用物質は、同時に照射されるレーザによって同時に焼成されることを特徴とする請求項13に記載の太陽電池の製造方法。
- 前記半導体基板は、レーザ照射によって熱処理されることを特徴とする請求項10に記載の太陽電池の製造方法。
- 前記半導体基板は、p型不純物半導体基板またはn型不純物半導体基板であることを特徴とする請求項10に記載の太陽電池の製造方法。
- 前記電極物質の形成ステップ前に、前記半導体基板の前面に反射防止膜を形成するステップをさらに含むことを特徴とする請求項10に記載の太陽電池の製造方法。
- 前記電極物質の形成ステップ前に、前記半導体基板の後面に後面保護膜を形成するステップをさらに含むことを特徴とする請求項10に記載の太陽電池の製造方法。
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KR1020080137176A KR101000067B1 (ko) | 2008-12-30 | 2008-12-30 | 고효율 태양전지용 레이저 소성장치 및 고효율 태양전지 제조방법 |
PCT/KR2009/007775 WO2010077018A2 (en) | 2008-12-30 | 2009-12-24 | Laser firing apparatus for high efficiency solar cell and fabrication method thereof |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014054350A1 (ja) | 2012-10-04 | 2014-04-10 | 信越化学工業株式会社 | 太陽電池セルの製造方法 |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101172632B1 (ko) * | 2010-12-08 | 2012-08-08 | 현대중공업 주식회사 | 태양전지의 전면전극 치밀화 방법 |
KR101860919B1 (ko) | 2011-12-16 | 2018-06-29 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
KR101902887B1 (ko) * | 2011-12-23 | 2018-10-01 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
TWI491054B (zh) * | 2012-08-08 | 2015-07-01 | Sino American Silicon Prod Inc | 太陽能電池之製造方法 |
CN105185850A (zh) * | 2015-08-17 | 2015-12-23 | 英利集团有限公司 | 选择性背场结构的制备工艺与n型太阳能电池的制备方法 |
US9882071B2 (en) | 2016-07-01 | 2018-01-30 | Sunpower Corporation | Laser techniques for foil-based metallization of solar cells |
DE102016118383A1 (de) * | 2016-09-28 | 2018-03-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur Bearbeitung eines Halbleiterbauelementes mit zumindest einer Halbleiterschicht |
AU2019205542A1 (en) | 2018-01-08 | 2020-07-16 | Regeneron Pharmaceuticals, Inc. | Steroids and antibody-conjugates thereof |
BR112021009673A2 (pt) | 2018-11-20 | 2021-12-14 | Regeneron Pharma | Derivados de bis-octa-hidrofenantreno carboxamida e conjugados de proteínas dos mesmos para uso como agonistas de lxr |
BR112021011729A2 (pt) | 2018-12-21 | 2021-11-09 | Regeneron Pharma | Tubulisinas e conjugados de proteína-tubulisina |
BR112021012233A2 (pt) | 2018-12-21 | 2021-09-08 | Regeneron Pharmaceuticals, Inc. | Análogos de rifamicina e conjugados de anticorpo-fármaco dos mesmos |
CN113905767A (zh) | 2019-01-08 | 2022-01-07 | 里珍纳龙药品有限公司 | 无痕连接体及其蛋白质偶联物 |
CA3128519A1 (en) | 2019-02-21 | 2020-08-27 | Regeneron Pharmaceuticals, Inc. | Methods of treating ocular cancer using anti-met antibodies and bispecific antigen binding molecules that bind met |
US11814428B2 (en) | 2019-09-19 | 2023-11-14 | Regeneron Pharmaceuticals, Inc. | Anti-PTCRA antibody-drug conjugates and uses thereof |
BR112022014278A2 (pt) | 2020-01-24 | 2022-09-20 | Regeneron Pharma | Conjugados de composto proteico-antiviral |
IL297027A (en) | 2020-04-16 | 2022-12-01 | Regeneron Pharma | Diels-Alder compression methods |
KR20230028325A (ko) | 2020-06-24 | 2023-02-28 | 리제너론 파마슈티칼스 인코포레이티드 | 튜불리신 및 단백질-튜불리신 접합체 |
KR20230070337A (ko) | 2020-09-14 | 2023-05-22 | 리제너론 파마슈티칼스 인코포레이티드 | Glp1 펩티도미메틱을 포함하는 항체-약물 접합체 및 이의 용도 |
AU2021366691B2 (en) | 2020-10-22 | 2024-06-06 | Regeneron Pharmaceuticals, Inc. | Anti-FGFR2 antibodies and methods of use thereof |
WO2023137026A1 (en) | 2022-01-12 | 2023-07-20 | Regeneron Pharmaceuticals, Inc. | Camptothecin analogs conjugated to a glutamine residue in a protein, and their use |
AU2023208050A1 (en) | 2022-01-14 | 2024-07-04 | Regeneron Pharmaceuticals, Inc. | Verrucarin a derivatives and antibody drug conjugates thereof |
WO2023173132A1 (en) | 2022-03-11 | 2023-09-14 | Regeneron Pharmaceuticals, Inc. | Anti-glp1r antibody-drug conjugates comprising glp1 peptidomimetics and uses thereof |
CN114927599A (zh) * | 2022-05-18 | 2022-08-19 | 东方日升(常州)新能源有限公司 | 一种太阳能电池及其制备方法以及激光退火装置 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5818976A (ja) * | 1981-07-27 | 1983-02-03 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
JPS6360082A (ja) * | 1986-08-28 | 1988-03-16 | Semiconductor Energy Lab Co Ltd | 光加工方法 |
JPH01125988A (ja) * | 1987-11-11 | 1989-05-18 | Hitachi Ltd | 太陽電池素子の製造方法 |
JPH04214675A (ja) * | 1990-12-13 | 1992-08-05 | Sanyo Electric Co Ltd | 太陽電池の製造方法 |
JP2001085354A (ja) * | 1999-07-05 | 2001-03-30 | Semiconductor Energy Lab Co Ltd | レーザー照射装置及びレーザー照射方法および半導体装置および半導体装置の作製方法 |
WO2006011608A1 (ja) * | 2004-07-30 | 2006-02-02 | Mitsuboshi Diamond Industrial Co., Ltd. | 基板の垂直クラック形成方法および垂直クラック形成装置 |
JP2006038999A (ja) * | 2004-07-23 | 2006-02-09 | Sumitomo Electric Ind Ltd | レーザ照射を用いた導電性回路形成方法と導電性回路 |
JP2007214264A (ja) * | 2006-02-08 | 2007-08-23 | Clean Venture 21:Kk | 光電変換装置の製造方法 |
WO2008025392A1 (de) * | 2006-08-29 | 2008-03-06 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum aufbringen von elektrischen kontakten auf halbleitende substrate, halbleitendes substrat und verwendung des verfahrens |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19831558C1 (de) * | 1998-07-14 | 2000-03-30 | Siemens Ag | Vorrichtung zum Laserbearbeiten von flachen Werkstücken |
US6277679B1 (en) * | 1998-11-25 | 2001-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing thin film transistor |
KR100611040B1 (ko) * | 2001-12-27 | 2006-08-09 | 엘지.필립스 엘시디 주식회사 | 레이저 열처리 장치 |
KR100445120B1 (ko) * | 2002-06-20 | 2004-08-21 | 삼성전자주식회사 | 동기신호 검출장치 |
ATE510306T1 (de) * | 2005-02-18 | 2011-06-15 | Clean Venture 21 Corp | Matrixanordnung sphärischer solarzellen und ihr herstellungsverfahren |
TWI334649B (en) * | 2005-09-27 | 2010-12-11 | Lg Chemical Ltd | Method for forming buried contact electrode of semiconductor device having pn junction and optoelectronic semiconductor device using the same |
JP2007121173A (ja) * | 2005-10-31 | 2007-05-17 | Denso Corp | ガスセンサ素子及びその製造方法 |
JP2008130590A (ja) | 2006-11-16 | 2008-06-05 | Sumitomo Heavy Ind Ltd | 複合処理装置、及び、複合処理方法 |
DE102007010872A1 (de) * | 2007-03-06 | 2008-09-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Präzisionsbearbeitung von Substraten und dessen Verwendung |
US20100084009A1 (en) * | 2007-03-16 | 2010-04-08 | Bp Corporation North America Inc. | Solar Cells |
KR100865960B1 (ko) | 2007-04-03 | 2008-10-30 | 경희대학교 산학협력단 | 실리콘 슬러리를 이용한 전자 소자 및 그 제조방법 |
US20080296567A1 (en) * | 2007-06-04 | 2008-12-04 | Irving Lyn M | Method of making thin film transistors comprising zinc-oxide-based semiconductor materials |
-
2008
- 2008-12-30 KR KR1020080137176A patent/KR101000067B1/ko not_active IP Right Cessation
-
2009
- 2009-12-23 US US12/646,659 patent/US20100167457A1/en not_active Abandoned
- 2009-12-24 EP EP09836339A patent/EP2382668A4/en not_active Withdrawn
- 2009-12-24 JP JP2011544365A patent/JP2012514342A/ja active Pending
- 2009-12-24 WO PCT/KR2009/007775 patent/WO2010077018A2/en active Application Filing
-
2011
- 2011-11-09 US US13/292,887 patent/US8778720B2/en not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5818976A (ja) * | 1981-07-27 | 1983-02-03 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
JPS6360082A (ja) * | 1986-08-28 | 1988-03-16 | Semiconductor Energy Lab Co Ltd | 光加工方法 |
JPH01125988A (ja) * | 1987-11-11 | 1989-05-18 | Hitachi Ltd | 太陽電池素子の製造方法 |
JPH04214675A (ja) * | 1990-12-13 | 1992-08-05 | Sanyo Electric Co Ltd | 太陽電池の製造方法 |
JP2001085354A (ja) * | 1999-07-05 | 2001-03-30 | Semiconductor Energy Lab Co Ltd | レーザー照射装置及びレーザー照射方法および半導体装置および半導体装置の作製方法 |
JP2006038999A (ja) * | 2004-07-23 | 2006-02-09 | Sumitomo Electric Ind Ltd | レーザ照射を用いた導電性回路形成方法と導電性回路 |
WO2006011608A1 (ja) * | 2004-07-30 | 2006-02-02 | Mitsuboshi Diamond Industrial Co., Ltd. | 基板の垂直クラック形成方法および垂直クラック形成装置 |
JP2007214264A (ja) * | 2006-02-08 | 2007-08-23 | Clean Venture 21:Kk | 光電変換装置の製造方法 |
WO2008025392A1 (de) * | 2006-08-29 | 2008-03-06 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum aufbringen von elektrischen kontakten auf halbleitende substrate, halbleitendes substrat und verwendung des verfahrens |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014054350A1 (ja) | 2012-10-04 | 2014-04-10 | 信越化学工業株式会社 | 太陽電池セルの製造方法 |
US9614117B2 (en) | 2012-10-04 | 2017-04-04 | Shin-Etsu Chemical Co., Ltd. | Solar cell manufacturing method |
Also Published As
Publication number | Publication date |
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WO2010077018A3 (en) | 2010-10-07 |
KR20100078814A (ko) | 2010-07-08 |
EP2382668A2 (en) | 2011-11-02 |
US20120058592A1 (en) | 2012-03-08 |
KR101000067B1 (ko) | 2010-12-10 |
EP2382668A4 (en) | 2012-12-26 |
US8778720B2 (en) | 2014-07-15 |
WO2010077018A2 (en) | 2010-07-08 |
US20100167457A1 (en) | 2010-07-01 |
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