Classifications

• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
  • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
  • C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
  • C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
  • C08G69/28—Preparatory processes
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
  • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
  • C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
  • C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
  • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
  • C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
  • C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
  • C08G69/265—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids from at least two different diamines or at least two different dicarboxylic acids
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
  • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
  • C08G69/40—Polyamides containing oxygen in the form of ether groups
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
  • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
  • C08G69/42—Polyamides containing atoms other than carbon, hydrogen, oxygen, and nitrogen
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/022—Quinonediazides
  • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
  • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F7/0387—Polyamides or polyimides
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/075—Silicon-containing compounds
  • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/40—Treatment after imagewise removal, e.g. baking

Definitions

• the present invention relates to a positive photosensitive resin composition containing a polyhydroxyamide resin and a compound generating an acid by light irradiation, and the polyhydroxyamide resin.
• This resin composition is suitably utilized as a protecting film, an insulating film or the like for a semiconductor or a circuit board such as a printed board.
• TMAH tetramethylammoniumhydroxide
• a representative polyimide-based positive photosensitive resin composition has an excessively high solubility in TMAH, such a method is adopted that by reducing the acidity of a polyamide acid using a basic organic compound such as triethylamine, the dissolving rate of the composition in an alkaline developer is suppressed (Patent Document 1).
• Examples of properties required to a positive photosensitive resin composition using a polyhydroxyamide resin include having film physical properties excellent in electric insulating properties, heat resistance, mechanical strength and the like, and being capable of forming a high-resolution circuit pattern. Recently, requirements for properties of these positive photosensitive resin compositions have become more rigid than ever.
• Non-patent Document 1 a polyhydroxyamide resin is synthesized using a dicarboxylic acid chloride and dihydroxyamine under a basic condition.
• inorganic ions such as chloride ions are present in the reaction solution, a polymer needs to be isolated and purified after the completion of the reaction.
• inorganic ions are mixed in the positive photosensitive resin composition obtained, there is a problem that the inorganic ions cause corrosion when the positive photosensitive resin composition is used in an electronic material field.
• Patent Document 3 a method for synthesizing a polyhydroxyamide using as a dicarboxylic acid component, a dicarboxylic acid derivative obtained from a reaction of 1-hydroxybenzotriazol with a dicarboxylic acid.
• Patent Document 4 a polyhydroxyamide resin synthesized from a coumarin dimer and a diamine is utilized as a negative photosensitive material.
• a composition containing a polyhydroxyamide resin having a specific structure shown as follows for example, a polyhydroxyamide resin synthesized from a coumarin dimer and a diamine having an aromatic group substituted with at least one OH group
• a compound generating an acid by light irradiation exhibits film physical properties excellent in terms of electric insulating properties, heat resistance, mechanical strength and the like.
• the present inventors found that when the composition is patterned as a positive photosensitive resin composition, a high-resolution circuit pattern can be formed, and completed the present invention.
• a positive photosensitive resin composition is characterized by containing: at least one type of a polyhydroxyamide resin (A) containing a repeating unit represented by Formula (1):
• X represents a tetravalent aliphatic group or an aromatic group
• R 1 and R 2 independently represent a hydrogen atom or an alkyl group having 1 to 10 carbon atom(s);
• Ar 1 and Ar 2 independently represent an aromatic group;
• Y represents an organic group containing an aromatic group substituted with at least one OH group;
• n represents an integer of 1 or more; and 1 and m independently represent an integer of 0 or 1 or more and satisfy 1+m ⁇ 2
• B generating an acid by light irradiation.
• the X represents an aliphatic group.
• the X represents an aliphatic group having a cyclic structure.
• an X—Ar 1 bond and an X—C(O) bond are each bonded to an adjecent atom in the X, and an X—Ar 2 bond and another X—C(O) bond are each bonded to an adjacent atom in the X.
• Ar 1 , Ar 2 , Y, 1 and m represent the same meaning as defined above; and R 3 to R 6 independently represent a hydrogen atom or an alkyl group having 1 to 10 carbon atom(s)).
• the Ar 1 and the Ar 2 independently represent a benzene ring.
• the —Ar 1 (OH) l group and the —Ar 2 (OH) m group have a structure represented by Formula (3):
• R 7 to R 10 independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a halogen atom, a nitro group, a formyl group, a cyano group, a carboxyl group, a phosphonyl group, a sulfonyl group, a phenyl group which may be substituted with W 1 , a naphthyl group which may be substituted with W 1 , a thienyl group which may be substituted with W 1 or a furyl group which may be substituted with W 1 ; and W 1 represents an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a hydroxy group, a halogen atom, a
• the Y represents an organic group containing a benzene ring substituted with at least one OH group.
• the Y represents an organic group containing two or more benzene rings substituted with at least one OH group.
• the Y has a structure represented by Formula (4):
• R 11 to R 16 independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a hydroxy group, a halogen atom, a nitro group, a formyl group, a cyano group, a carboxyl group, a phosphonyl group, a sulfonyl group, a phenyl group which may be substituted with W 2 , a naphthyl group which may be substituted with W 2 , a thienyl group which may be substituted with W 2 or a furyl group which may be substituted with W 2 ;
• W 2 represents an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a hydroxy group, a hal
• the Z 1 represents a single bond, —CH 2 —, —C(CH 3 ) 2 —, —C(CF 3 ) 2 —, —C(O)NH—, —O—, —S(O) 2 — or —C(O)—.
• the polyhydroxyamide resin (A) further contains at least one type of a repeating unit represented by Formula (5):
• the Q represents an organic group containing an aromatic group.
• the Q represents an organic group containing a benzene ring.
• the Q represents an organic group containing two or more benzene rings.
• the Q represents an organic group containing at least one repeating unit structure selected from Formula (6) to Formula (8):
• R 17 to R 24 independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a halogen atom, a nitro group, a formyl group, a cyano group, a carboxyl group, a phosphonyl group, a sulfonyl group, a phenyl group which may be substituted with W 4 , a naphthyl group which may be substituted with W 4 , a thienyl group which may be substituted with W 4 or a furyl group which may be substituted with W 4 ; and W 4 represents an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a hydroxy group, a halogen atom, a
• Z 2 to Z 7 independently represent an alkylene group having 1 to 3 carbon atom(s), —O—, —S—, —S(O) 2 — or —C(O)—.
• Z 2 represents —O—.
• Z 3 and Z 4 represent —O—.
• Z 5 and Z 7 represent —O— and Z 6 represents —S(O) 2 —.
• the polyhydroxyamide resin (A) further contains at least one type of a repeating unit represented by Formula (9):
• R 52 to R 56 independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a halogen atom, a nitro group, a formyl group, a cyano group, a carboxyl group, a phosphonyl group, a sulfonyl group, a phenyl group which may be substituted with W 6 , a naphthyl group which may be substituted with W 6 , a thienyl group which may be substituted with W 6 or a furyl group which may be substituted with W 6 ;
• W 6 represents an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s),
• Z 8 to Z 10 independently represent an alkylene group having 1 to 3 carbon atom(s), —O—, —S—, —S(O) 2 — or —C(O)—.
• Z 8 and Z 10 represent a propylene group and Z 9 represents —O—.
• the positive photosensitive resin composition according to any one of the first aspect to the 23rd aspect 0.01 to 100 parts by mass of the compound (B) generating an acid by light irradiation is contained based on 100 parts by mass of the polyhydroxyamide resin (A).
• the positive photosensitive resin composition according to any one of the first aspect to the 24th aspect further contains a crosslinkable compound (C).
• the positive photosensitive resin composition according to the 25th aspect 30 to 120 parts by mass of the crosslinkable compound (C) is contained based on 100 parts by mass of the polyhydroxyamide resin (A).
• a positive photosensitive resin composition-containing varnish is characterized in that the positive photosensitive resin composition as described in any one of the first aspect to the 26th aspect is dissolved in at least one type of a solvent.
• a cured film is produced by using the positive photosensitive resin composition as described in any one of the first aspect to the 26th aspect.
• a cured film is produced by using the positive photosensitive resin composition-containing varnish as described in the 27th aspect.
• a structure includes at least one layer formed by the cured film as described in the 28th aspect or the 29th aspect on a substrate.
• a polyhydroxyamide resin contains a repeating unit represented by Formula (10):
• X represents a tetravalent aliphatic group or an aromatic group
• R 1 and R 2 independently represent a hydrogen atom or an alkyl group having 1 to 10 carbon atom(s);
• Ar 1 and Ar 2 independently represent an aromatic group;
• Y represents an organic group containing an aromatic group substituted with at least one OH group;
• n represents an integer of 1 or more; and
• l and m independently represent an integer of 0 or 1 or more and satisfy l+m ⁇ 2
• the X represents an aliphatic group.
• the X represents an aliphatic group having a cyclic structure.
• an X—Ar 1 bond and an X—C(O) bond are each bonded to an adjacent atom in the X, and an X—Ar 2 bond and another X—C(O) bond are each bonded to an adjacent atom in the X.
• Ar 1 , Ar 2 , Y, l and m represent the same meaning as defined above; and R 3 to R 6 independently represent a hydrogen atom or an alkyl group having 1 to 10 carbon atom(s)).
• the Ar 1 and the Ar 2 independently represent a benzene ring.
• the —Ar 1 (OH) l group and the —Ar 2 (OH) m group have a structure represented by Formula (12):
• R 7 to R 10 independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a halogen atom, a nitro group, a formyl group, a cyano group, a carboxyl group, a phosphonyl group, a sulfonyl group, a phenyl group which may be substituted with W 1 , a naphthyl group which may be substituted with W 1 , a thienyl group which may be substituted with W 1 or a furyl group which may be substituted with W 1 ; and W 1 represents an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a hydroxy group, a halogen atom, a
• the Y represents an organic group containing a benzene ring substituted with at least one OH group.
• the Y represents an organic group containing two or more benzene rings substituted with at least one OH group.
• the Y has a structure represented by Formula (13):
• R 11 to R 16 independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a hydroxy group, a halogen atom, a nitro group, a formyl group, a cyano group, a carboxyl group, a phosphonyl group, a sulfonyl group, a phenyl group which may be substituted with W 2 , a naphthyl group which may be substituted with W 2 , a thienyl group which may be substituted with W 2 or a furyl group which may be substituted with W 2 ;
• W 2 represents an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a hydroxy group, a hal
• the Z 1 represents a single bond, —CH 2 —, —C(CH 3 ) 2 —, —C(CF 3 ) 2 —, —C(O)NH—, —O—, —S(O) 2 — or —C(O)—.
• the polyhydroxyamide resin (A) further contains at least one type of a repeating unit represented by Formula (14):
• the Q represents an organic group containing an aromatic group.
• the Q represents an organic group containing a benzene ring.
• the Q represents an organic group containing two or more benzene rings.
• the Q represents an organic group containing at least one repeating unit structure selected from Formula (15) to Formula (17):
• R 17 to R 24 independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a halogen atom, a nitro group, a formyl group, a cyano group, a carboxyl group, a phosphonyl group, a sulfonyl group, a phenyl group which may be substituted with W 4 , a naphthyl group which may be substituted with W 4 , a thienyl group which may be substituted with W 4 or a furyl group which may be substituted with W 4 ; and W 4 represents an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a hydroxy group, a halogen atom,
• Z 2 to Z 7 independently represent an alkylene group having 1 to 3 carbon atom(s), —O—, —S—, —S(O) 2 — or —C(O)—.
• Z 2 represents —O—.
• Z 3 and Z 4 represent —O—.
• Z 5 and Z 7 represent —O— and Z 6 represents —S(O) 2 —.
• the polyhydroxyamide resin (A) further contains at least one type of a repeating unit represented by Formula (18):
• R 52 to R 56 independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a halogen atom, a nitro group, a formyl group, a cyano group, a carboxyl group, a phosphonyl group, a sulfonyl group, a phenyl group which may be substituted with W 6 , a naphthyl group which may be substituted with W 6 , a thienyl group which may be substituted with W 6 or a furyl group which may be substituted with W 6 ;
• W 6 represents an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s),
• Z 8 to Z 10 independently represent an alkylene group having 1 to 3 carbon atom(s), —O—, —S—, —S(O) 2 — or —C(O)—.
• Z 8 and Z 10 represent a propylene group and Z 9 represents —O—.
• the positive photosensitive resin composition of the present invention can produce a cured film excellent in electric insulating properties, heat resistance, mechanical strength and electrical characteristics.
• a high-resolution circuit pattern can be formed by exposing the positive photosensitive resin composition of the present invention applied on a substrate to light using a specified pattern mask and then by developing the resultant pattern with an alkaline developer.
• a cured film produced using the positive photosensitive resin composition of the present invention is useful as a protecting film and an insulating film for a semiconductor and a circuit board such as a printed board, and is particularly suitable for a protecting film and an insulating film for a semiconductor.
• the positive photosensitive resin of the present invention can be simply and easily synthesized and contains no chloride, low molecule compound or the like affecting adversely a semiconductor element, an electronic/electric circuit or the like, so that the resin can be used as the positive photosensitive resin composition of the present invention without purifying the resin.
• the positive photosensitive resin composition according to the present invention contains at least one type of a polyhydroxyamide resin (A) containing a repeating unit represented by Formula (1) and having a weight average molecular weight of 3,000 to 100,000, and a compound (B) generating an acid by light irradiation.
• A polyhydroxyamide resin
• B compound generating an acid by light irradiation.
• polyhydroxyamide resin (A) is also in the scope of the present invention.
• the polyhydroxyamide resin (A) used in the present invention contains the repeating unit represented by Formula (1):
• X represents a tetravalent aliphatic group or an aromatic group
• R 1 and R 2 independently represent a hydrogen atom or an alkyl group having 1 to 10 carbon atom(s);
• Ar 1 and Ar 2 independently represent an aromatic group;
• Y represents an organic group containing an aromatic group substituted with at least one OH group;
• n represents an integer of 1 or more; and
• l and m independently represent an integer of 0 or 1 or more and satisfy l+m ⁇ 2).
• X is preferably an aliphatic group, more preferably an aliphatic group having a cyclic structure in particular.
• an X—Ar 1 bond and an X—C(O) bond be each individually bonded to an adjacent atom in the X, and an X—Ar 2 bond and another X—C(O) bond be each bonded to an adjacent atom in the X.
• Ar 1 , Ar 2 , Y, l and m represent the same meaning as defined above; and R 3 to R 6 independently represent a hydrogen atom or an alkyl group having 1 to 10 carbon atom(s)).
• Ar 1 and Ar 2 independently represent a benzene ring and specific examples of the —Ar 1 (OH) l group containing Ar 1 and the —Ar 2 (OH) m group containing Ar 2 include groups having a structure represented by Formula (3):
• R 7 to R 10 independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a halogen atom, a nitro group, a formyl group, a cyano group, a carboxyl group, a phosphonyl group, a sulfonyl group, a phenyl group which may be substituted with W 1 , a naphthyl group which may be substituted with W 1 , a thienyl group which may be substituted with W 1 or a furyl group which may be substituted with W 1 ; and W 1 represents an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a hydroxy group, a halogen atom, a
• Y be an organic group containing a benzene ring substituted with at least one OH group and it is more preferred that Y be particularly an organic group containing two or more benzene rings substituted with at least one OH group.
• Examples of the Y include groups having a structure represented by Formula (4):
• R 11 to R 16 independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a hydroxy group, a halogen atom, a nitro group, a formyl group, a cyano group, a carboxyl group, a phosphonyl group, a sulfonyl group, a phenyl group which may be substituted with W 2 , a naphthyl group which may be substituted with W 2 , a thienyl group which may be substituted with W 2 or a furyl group which may be substituted with W 2 ;
• W 2 represents an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a hydroxy group, a hal
• the Z 1 is a single bond, —CH 2 —, —C(CH 3 ) 2 —, —C(CF 3 ) 2 —, —C(O)NH—, —O—, —S(O) 2 — or —C(O)—.
• Specific examples of the compound having a structure represented by Formula (4) include 4,4′-dihydroxybenzidine (3BP), 3,3′-diamino-4,4′-dihydroxybiphenyl (4BP), 3,3′-diamino-2,2′-dihydroxybiphenyl (2BP), 2,2′-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (BAHF), 2,2-bis(4-amino-3,5-dihydroxyphenyl) hexafluoropropane, 2,2-bis(4-(3-amino-4-hydroxyphenoxy)phenyl) hexafluoropropane, bis(3-amino-4-hydroxyphenyl)methane (BAPF), 3,3′-diamino-4,4′-dihydroxybenzophenone (AHPK), 3,3′-diamino-4,4′-dihydroxy-phenyl ether (AHPE), 3,3′-diamino
• polyhydroxyamide resin of the present invention may contain, besides the repeating unit represented by Formula (1), a repeating unit represented by Formula (5):
• Q is an aromatic group, particularly an organic group containing a benzene ring, preferably an organic group containing two or more benzene rings.
• Examples of the Q include groups having structures represented by Formula (6) to Formula (8):
• R 17 to R 24 independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a halogen atom, a nitro group, a formyl group, a cyano group, a carboxyl group, a phosphonyl group, a sulfonyl group, a phenyl group which may be substituted with W 4 , a naphthyl group which may be substituted with W 4 , a thienyl group which may be substituted with W 4 or a furyl group which may be substituted with W 4 ; and W 4 represents an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a hydroxy group, a halogen atom, a
• Z 2 to Z 7 independently represent an alkylene group having 1 to 3 carbon atom(s), —O—, —S—, —S(O) 2 — or —C(O)—. Particularly, it is preferred that Z 2 to Z 5 or Z 7 represent —O— and Z 6 represents —S(O) 2 —.
• aromatic diamines such as 2,2′-bis(trifluoromethyl)benzidine, 3,3′-bis(trifluoromethyl)benzidine, 2,6,2′,6′-tetraxis(trifluoromethyl)benzidine, 2,2-bis(4-anilino) hexafluoropropane, 2,2-bis(3-anilino) hexafluoropropane, 2-bis(3-amino-4-toluyl) 2,2-bis(4-(4-amino-3-carboxyphenoxy)phenyl) hexafluoropropane, p-phenylenediamine, m-phenylenediamine, 2,4,6-trimethyl-1,3-phenylenediamine, 2,3,5,6-tetramethyl-1,4-phenylenediamine, 4,4′-diamino diphenyl ether, 3,4′-diamino diphenyl ether, 3,4′-diamino diphen
• polyhydroxyamide resin of the present invention may contain, besides the repeating unit represented by Formula (1), a repeating unit represented by Formula (9):
• R 52 to R 56 independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s), an alkoxy group having 1 to 10 carbon atom(s), a halogen atom, a nitro group, a formyl group, a cyano group, a carboxyl group, a phosphonyl group, a sulfonyl group, a phenyl group which may be substituted with W 6 , a naphthyl group which may be substituted with W 6 , a thienyl group which may be substituted with W 6 or a furyl group which may be substituted with W 6 ;
• W 6 represents an alkyl group having 1 to 10 carbon atom(s), a haloalkyl group having 1 to 10 carbon atom(s),
• Z 8 to Z 10 independently represent an alkylene group having 1 to 3 carbon atom(s), —O—, —S—, —S(O) 2 — or —C(O)—. Particularly, it is more preferred that Z 8 and Z 10 represent a propylene group and Z 9 represents —O—.
• the polyhydroxyamide resin represented by Formula (1) to be used in the present invention can be obtained, for example, by reacting a coumarin dimer component with a diamine component.
• the coumarin dimer component which is a monomer component constituting the polyhydroxyamide resin (A) used in the present invention is represented by General Formula (19):
• R 56 , R 57 , R 58 , R 59 , R 60 and R 61 independently represent an alkyl group having 1 to 10 carbon atom(s), a halogen atom, a nitro group, an amino group, a cyano group, a carboxy group, an alkoxycarbonyl group having 1 to 10 carbon atom(s), a halogenated alkyl group having 1 to 10 carbon atom(s) or a hydroxy group).
• the diamine component which is a monomer component constituting the polyhydroxyamide resin (A) used in the present invention is not particularly limited so long as it is a diamine containing aromatic groups substituted with at least one OH group.
• diamine component examples include 4,4′-dihydroxybenzidine (3BP), 3,3′-diamino-4,4′-dihydroxybiphenyl (4BP), 3,3′-diamino-2,2′-dihydroxybiphenyl (2BP), 2,2′-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (BAHF), 2,2-bis(4-amino-3,5-dihydroxyphenyl)hexafluoropropane, 2,2-bis(4-(3-amino-4-hydroxyphenoxy)phenyl)hexafluoropropane, bis(3-amino-4-hydroxyphenyl)methane (BAPF), 3,3′-diamino-4,4′-dihydroxybenzophenone (AHPK), 3,3′-diamino-4,4′-dihydroxy-phenyl ether (AHPE), 3,3′-diamino-4,4′-dihydroxy-thioph
• diamine components particularly preferred examples thereof include bis(3-amino-4-hydroxyphenyl)methane (BAPF), 2,2′-bis(3-amino-4-hydroxyphenyl)propane (BAPA), 2,2′-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (BAHF), 3,3′-diamino-4,4′-dihydroxy-phenyl ether (AHPE), 3,3′-diamino-4,4′-dihydroxybenzophenone (AHPK), bis(3-amino-4-hydroxyphenyl)sulfide (BSDA) and (3-amino-4-hydroxy)phenyl (3-amino-4-hydroxy)anilide (AHPA).
• BAPF bis(3-amino-4-hydroxyphenyl)methane
• BAPA 2,2′-bis(3-amino-4-hydroxyphenyl)propane
• BAHF 2,2′-bis(3-amino-4-hydroxypheny
• diamine component which is a monomer component constituting the polyhydroxyamide resin (A) used in the present invention
• diamines containing aromatic groups substituted with at least one OH group other diamines can be used.
• the other diamines are not particularly limited, however, it is desired that the other diamines are preferably diamines containing aromatic groups, particularly diamines containing one or more benzene ring(s).
• Examples of the other diamines which are diamines containing aromatic groups include p-phenylenediamine, m-phenylenediamine, 2,4,6-trimethyl-1,3-phenylenediamine, 2,3,5,6-tetramethyl-1,4-phenylenediamine, 4,4′-diaminodiphenylether, 3,4′-diaminodiphenylether, 3,3′-diaminodiphenylether, 4,4′-diaminodiphenylsulfide, 4,4′-diaminodiphenylmethane, 3,4′-diaminodiphenylmethane, 3,3′-diaminodiphenylmethane, 4,4-methylene-bis(2-methylaniline), 4,4′-methylene-bis(2,6-dimethylaniline), 4,4-methylene-bis(2,6-diethylaniline), 4,4′-methylene-bis(2-isopropyl-6-
• particularly preferred examples include 4,4′-diaminodiphenylether (ODA) and 1,3-bis(4-aminophnoxy)benzene (DA4P).
• diamine component which is a monomer component constituting the polyhydroxyamide resin (A) used in the present invention besides the above diamines containing aromatic groups substituted with at least one OH group, also diamines containing siloxane may be used.
• siloxane-containing diamine By using a siloxane-containing diamine in a combination, the adhesion of a coating film containing the polyhydroxyamide resin (A) to a substrate can be enhanced.
• siloxane-containing diamines represented by Formula (20):
• R 62 represents a divalent organic group
• R 63 independently represent a monovalent organic group
• k represents an integer of 1 or more
• APDS bis(3-aminopropyl)-1,1,3,3-tetramethyldisiloxane
• the polyhydroxyamide resin (A) used in the present invention is obtained by reacting the coumarin dimer component and the diamine component, that is a diamine containing aromatic groups substituted with at least one OH group and further as desired other diamine components and/or siloxane-containing diamines, and is usually obtained by effecting the reaction in a polar solvent such as N-methylpyrrolidone, dimethylacetoamide, ⁇ -butylolactone and diglyme.
• the solvent used therefor is not particularly limited so long as the solvent is a solvent capable of dissolving the polyhydroxyamide resin (A).
• the lower limit of the temperature range for the reaction of the coumarin dimer component and the diamine component is usually ⁇ 20° C. or more, preferably ⁇ 5° C. or more and the upper limit of the temperature range is usually 150° C. or less, preferably 100° C. or less. From the range between the lower limit and the upper limit, any temperature can be selected.
• the compound (B) generating an acid by light irradiation which is used in the present invention is not particularly limited so long as the compound generates an acid through a photoreaction and enhances the solubility of the light-irradiated part in an alkaline developer. These compounds may be used singly or in combination of two or more types thereof.
• any of conventionally known photoacid generators may be adopted. Specific examples thereof include o-quinonediazide compounds, allyl diazonium salts, diallyl iodonium salts, triallyl sulfonium salts, o-nitrobenzyl esters, p-nitrobenzyl esters, trihalomethyl group-substituted s-triazine derivatives and imidesulfonate derivatives.
• a sensitizer can be used in combination with the compound (B) generating an acid by light irradiation.
• a sensitizer examples include perylene, anthracene, thioxanthone, Michler's ketone, benzophenone and fluorene.
• the present invention is not limited to these examples.
• o-quinonediazide compounds are preferred in terms of capable of obtaining high sensitivity and high-resolution with respect to the coating film obtained using the positive photosensitive resin composition.
• An o-quinonediazide compound is usually obtained by subjecting o-quinonediazidesulfonyl chloride and a compound having at least any one group selected from a hydroxy group and an amino group to a condensation reaction in the presence of a basic catalyst, as an o-quinonediazidesulfonate ester or an o-quinonediazidesulfonamide.
• Examples of an o-quinonediazidesulfonic acid component constituting the o-quinonediazidesulfonyl chloride include 1,2-naphthoquinone-2-diazide-4-sulfonic acid, 1,2-naphthoquinone-2-diazide-5-sulfonic acid and 1,2-naphthoquinone-2-diazide-6-sulfonic acid.
• Examples of the compound having a hydroxy group include: phenol compounds such as phenol, o-cresol, m-cresol, p-cresol, hydroquinone, resorcinol, catechol, o-methoxyphenol, 4,4-isopropylidenediphenol, 1,1-bis(4-hydroxyphenyl)cyclohexane, 4,4′-dihydroxyphenylsulfone, 4,4-hexafluoroisopropylidenediphenol, 4,4′,4′′-trihydroxytriphenylmethane, 1,1,1-tris(4-hydroxyphenyl)ethane, 4,4′-(1-(4-(1-(4-hydroxyphenyl)-1-methylethyl)phenyl)ethylidene)bisphenol, methyl 3,4,5-trihydroxybenzoate, propyl 3,4,5-trihydroxybenzoate, isoamyl 3,4,5-trihydroxybenzoate ester, 2-ethylbutyl 3,4,5-trihydroxy
• examples of the compound having both of a hydroxy group and an amino group include: aminophenols such as o-aminophenol, m-aminophenol, p-aminophenol, 4-aminoresorcinol, 2,3-diaminophenol, 2,4-diaminophenol, 4,4′-diamino-4′′-hydroxytriphenylmethane, 4-amino-4′,4′′-dihydroxytriphenylmethane, bis(4-amino-3-carboxy-5-hydroxyphenyl)ether, bis(4-amino-3-carboxy-5-hydroxyphenyl)methane, bis(4-amino-3-carboxy-5-hydroxyphenyl)sulfone, 2,2-bis(4-amino-3-carboxy-5-hydroxyphenyl)propane and 2,2-bis(4-amino-3-carboxy-5-hydroxyphenyl)hexafluoropropane; and alkanolamines such as 2-amino
• o-quinonediazidesulfonyl chloride and a compound having at least one group selected from a hydroxy group and an amino group to a condensation reaction, there is obtained a di-substituted, tri-substituted, tetra-substituted or penta-substituted o-quinonediazide compound in which a part or the whole of hydroxy groups or amino groups of the above compound is replaced by an o-quinonediazidesulfonyl group of o-quinonediazidesulfonyl chloride.
• o-quinonediazide compound When such an o-quinonediazide compound is used as a component of the positive photosensitive resin composition, generally used is the above poly-substituted o-quinonediazide compound singly or as a mixture of two or more types of poly-substituted compounds selected from the above poly-substituted compounds.
• o-quinonediazide compounds from the viewpoint that the balance of the difference between the development solubilities of the exposed part and the unexposed part with respect to the coating film obtained using the positive photosensitive resin composition is favorable, and that there is no development residue in a pattern bottom part (residue in a pattern edge part) during the development, preferred are o-quinonediazidesulfonate ester of p-cresol, o-quinonediazidesulfonate ester of 4,4′-(1-(4-(1-(4-hydroxyphenyl)-1-methylethyl)phenyl)ethylidene) bisphenol, o-quinonediazidesulfonate ester of methyl 3,4,5-trihydroxybenzoate ester, o-quinonediazidesulfonate ester of 2,3,4-trihydroxybenzophenone and o-quinonediazidesulfonate ester of 2,3,4,4′-tetrahydroxybenzophenone.
• These compounds may
• the content of the compound (B) generating an acid by light irradiation used in the present invention is not particularly limited. However, from the viewpoint that the difference in the solubility in a developer between the exposed part and the unexposed part with respect to the coating film obtained from the positive photosensitive resin composition of the present invention becomes higher, the content of the compound (B) is preferably 0.01 parts by mass or more, more preferably 10 parts by mass or more, based on 100 parts by mass of the polyhydroxyamide resin (A).
• the content of the compound (B) generating an acid by light irradiation is preferably 100 parts by mass or less, more preferably 30 parts by mass or less.
• the positive photosensitive resin composition of the present invention may contain a crosslinkable compound (C).
• the crosslinkable compound (C) is not particularly limited so long as it is a compound having a group capable of being reacted with an organic group contained in the polyhydroxyamide resin (A) during a process (hereinafter, referred to as during final-curing) for converting the coating film obtained using the positive photosensitive resin composition to the cured film.
• Examples of the crosslinkable compound (C) include: compounds having two or more epoxy groups; or melamine derivatives, benzoguanamine derivatives or glycoluril which have a group in which the hydrogen atom of an amino group is replaced by a methylol group, an alkoxymethyl group or both.
• melamine derivatives and benzoguanamine derivatives may be a dimer, a trimer or a mixture arbitrarily selected from monomers, dimers and trimers.
• crosslinkable compound (C) of the present invention may be used singly or in combination of two or more types thereof.
• crosslinkable compound (C) As the crosslinkable compound (C), commercially available compounds may be used. Commercially available compounds are easily obtained, which is more preferred. The followings are specific examples thereof (trade names). However, the present invention is not limited to these examples.
• Examples of the compounds having two or more epoxy groups include epoxy compounds having a cyclohexene structure such as Epolead GT-401, Epolead GT-403, Epolead GT-301, Epolead GT-302, Celloxide 2021 and Celloxide 3000 (manufactured by Daicel Chemical Industries, Ltd.); bisphenol A-type epoxy compounds such as Epikote 1001, Epikote 1002, Epikote 1003, Epikote 1004, Epikote 1007, Epikote 1009, Epikote 1010 and Epikote 828 (manufactured by Japan Epoxy Resins Co., Ltd.); bisphenol F-type epoxy compounds such as Epikote 807 (manufactured by Japan Epoxy Resins Co., Ltd.); phenol novolac-type epoxy compounds such as Epikote 152 and Epikote 154 (manufactured by Japan Epoxy Resins Co., Ltd.) and EPPN 201 and EPPN 202 (manufactured by Nippon Kayaku Co., Ltd
• Examples of the melamine derivatives, the benzoguanamine derivative or the glycourils which have a group in which the hydrogen atom of an amino group are replaced by a methylol group, an alkoxymethyl group or both include MX-750 in which methoxymethyl groups are replaced in a number of 3.7 in average per triazine ring and MW-30 in which methoxymethyl groups are replaced in a number of 5.8 in average per triazine ring (manufactured by Sanwa Chemical Co., Ltd.); or methoxymethylated melamine such as Cymel 300, Cymel 301, Cymel 303, Cymel 350, Cymel 370, Cymel 771, Cymel 325, Cymel 327, Cymel 703 and Cymel 712; methoxymethylated butoxymethylated melamine such as Cymel 235, Cymel 236, Cymel 238, Cymel 212, Cymel 253 and Cymel 254; butoxymethylated melamine such as Cymel 506 and Cymel 508; carboxyl
• crosslinkable compound (C) from the point that there is no film thickness loss of the coating film obtained using the positive photosensitive resin composition of the present invention during the final curing and the point that the cured film obtained using the positive photosensitive resin composition is advantageous in heat resistance, chemical resistance and film density, epoxy compounds having structural units represented by Formula (21) and Formula (22):
• R 64 , R 65 , R 66 and R 67 independently represent a hydrogen atom, a hydroxy group or an organic group having 1 to 10 carbon atom(s); and R 68 represents an alkyl group having 1 to 4 carbon atom(s)) and having two or more structural units represented by Formula (22) are more preferred.
• an epoxy compound examples include commercially available products such as ECON-102, ECON-103S, ECON-104S, ECON-1020, ECON-1025 and ECON-1027 (manufactured by Nippon Kayaku Co., Ltd.) and Epikote 180S75 (manufactured by Japan Epoxy Resins Co., Ltd.) which fall under a cresol novolac-type epoxy compound.
• an epoxy compound having a number average molecular weight of 500 to 10,000 is more preferred.
• the epoxy compound has a number average molecular weight of less than 500, mechanical strength, heat resistance and chemical resistance of the cured film obtained using the positive photosensitive resin composition of the present invention may be undermined.
• the epoxy compound has a number average molecular weight of more than 10,000, the compatibility of the epoxy compound with the polyhydroxyamide resin (A) may be extremely lowered.
• the content of the crosslinkable compound (C) in the positive photosensitive resin composition of the present invention is not particularly limited. However, since the water absorbing properties of the cured film obtained using the positive photosensitive resin composition becomes lower and the heat resistance and the chemical resistance thereof become higher, the content is preferably 1 part by mass or more, more preferably 5 parts by mass or more based on 100 parts by mass of the polyhydroxyamide resin (A). In addition, in terms of not undermining the preservation stability of the positive photosensitive resin composition, the content of the crosslinkable compound (C) is preferably 100 parts by mass or less, more preferably 50 parts by mass or less based on 100 parts by mass of the polyhydroxyamide resin (A).
• the positive photosensitive resin composition of the present invention may contain an organic silane compound or an aluminum chelate compound for enhancing the adhesion of the coating film and the cured film obtained using the composition to a substrate.
• an organic silane compound and such an aluminum chelate compound for example commercially available products manufactured by GE Toshiba Silicon Co., Ltd., Shin-Etsu Chemical Co., Ltd., and the like may also be used and are more preferred because such products are easily available.
• organic silane compound examples include vinyl triethoxy silane, 3-glycidoxypropyl triethoxy silane, 3-glycidoxypropyl diethoxy silane, 3-glycidoxypropyl ethoxydiethyl silane, 3-glycidoxypropyl trimethoxy silane, 3-glycidoxypropyl dimethoxymethyl silane, 3-glycidoxypropyl methoxydimethyl silane, 3-methacryloxypropyl trimethoxy silane, 3-methacryloxypropyl methoxydimethyl silane, 3-methacryloxypropyl dimethoxymethyl silane, 3-aminopropyl trimethoxy silane, 3-aminopropyl dimethoxymethyl silane, 3-aminopropyl methoxydimethyl silane, 3-aminopropyl triethoxy silane, 3-aminopropyl diethoxyethyl silane and 3-aminopropyl ethoxydiethyl silane.
• Examples of the aluminum chelate compound include tris(acetylacetonate) aluminum and acetylacetonate aluminum diisopropylate.
• one type selected from the organic silane compounds and the aluminum chelate compounds may be used singly or in combination of two or more types thereof.
• the content of a compound selected from the organic silane compounds and the aluminum chelate compounds in the positive photosensitive resin composition of the present invention is not particularly limited. However, from the viewpoint that the adhesion of the coating film and the cured film obtained using the positive photosensitive resin composition to a substrate can be satisfactorily enhanced, the content is preferably 0.1 parts by mass or more, more preferably 0.5 parts by mass or more based on 100 parts by mass of the polyhydroxyamide resin (A).
• the preservation stability of the positive photosensitive resin composition is favorable and there is no residue in the bottom part of a pattern obtained using the composition, which is preferred and the content of 20 parts by mass or less is more preferred.
• the positive photosensitive resin composition of the present invention may further contain a surfactant for enhancing the coating properties and the uniformity of the surface of the coating film formed by applying the composition.
• the surfactant used for this purpose is not particularly limited and fluorinated surfactants, silicon-based surfactants, nonionic surfactants and the like may be used.
• these surfactants for example, commercially available products manufactured by Sumitomo 3M Limited, Dainippon Ink and Chemicals, Incorporated, Asahi Glass Co., Ltd., and the like are preferred because such products are easily available.
• the fluorinated surfactant is preferred because the fluorinated surfactant has high enhancing effect of coating properties. More preferred examples of the fluorinated surfactant include EFTOP EF301, EFTOP EF303 and EFTOP EF352 (manufactured by JEMCO, Inc.), MEGAFAC F171, MEGAFAC F173 and MEGAFAC R-30 (manufactured by Dainippon Ink and Chemicals, Incorporated), Fluorad FC 430 and Fluorad FC431 (manufactured by Sumitomo 3M Limited) and Asahi Guard AG 710, Surflon S-382, Surflon SC 101, Surflon SC 102, Surflon SC 103, Surflon SC 104, Surflon SC 105 and Surflon SC 106 (manufactured by Asahi Glass Co., Ltd.).
• EFTOP EF301 EFTOP EF303 and EFTOP EF352
• the content of the surfactant used in the positive photosensitive resin composition of the present invention is not particularly limited. However, when the content is less than 0.01 parts by mass based on 100 parts by mass of the polyhydroxyamide resin (A), the enhancing effect of the coating properties may not be obtained. Therefore, the content of the surfactant is preferably 0.01 parts by mass or more, more preferably 0.05 parts by mass or more based on 100 parts by mass of the polyhydroxyamide resin (A). On the other hand, when the content of the surfactant is more than 15 parts by mass based on 100 parts by mass of the polyhydroxyamide resin (A), the uniformity of the surface of the coating film may not be obtained. Therefore, the content of the surfactant is preferably 15 parts by mass or less, more preferably 10 parts by mass or less based on 100 parts by mass of the polyhydroxyamide resin (A).
• the positive photosensitive resin composition of the present invention is usually dissolved in an organic solvent to be used in a varnish form.
• the organic solvent used in a varnish containing the positive photosensitive resin composition of the present invention is not particularly limited so long as the solvent can homogeneously dissolve the polyhydroxyamide resin (A), the compound (B) generating an acid by light irradiation, the crosslinkable compound (C) blended if necessary, the compound for enhancing the adhesion, the surfactant or the like, and these components can be compatibilized with each other in the solvent.
• organic solvent examples include acetone, methanol, ethanol, isopropyl alcohol, methoxymethyl pentanol, dipentene, ethyl amyl ketone, methyl nonyl ketone, methyl ethyl ketone, methyl isoamyl ketone, methyl isopropyl ketone, methyl cellosolve, ethyl cellosolve, butyl cellosolve, methyl cellosolve acetate, ethyl cellosolve acetate, butyl carbitol, butyl carbitol acetate, ethyl carbitol, ethyl carbitol, ethyl carbitol acetate, ethylene glycol, ethylene glycol monoacetate, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, propylene glycol, propylene glycol monoacetate, propylene glycol monomethyl ether, prop
• organic solvents may be used singly or in an appropriate combination of two or more types thereof.
• the organic solvent preferred is one type or a mixture of two or more types selected from methyl ethyl ketone, butylcellosolve, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, dipropylene glycol monomethyl ether, N,N-dimethylacetoamide, N-methylpyrrolidone, ⁇ -butylolactone, ethyl lactate, and butyl lactate.
• the method for obtaining the positive photosensitive resin composition of the present invention is not particularly limited. Since a composition of this type is usually used in a varnish form, the positive photosensitive resin composition of the present invention is generally prepared by dissolving the polyhydroxyamide resin (A), the compound (B) generating an acid by light irradiation, and, as desired other components such as the crosslinkable compound (C), in an organic solvent.
• a coumarin dimer component and a diamine component as monomers constituting the polyhydroxyamide resin (A) may be subjected to a polymerization reaction in an organic solvent and the obtained reaction solution may be used as it is.
• a plurality of types of organic solvents may be mixed before use, or may be separately added as appropriate.
• the concentration of the solid content in the positive photosensitive resin composition of the present invention is not particularly limited so long as each component is homogeneously dissolved. Generally, when a solution of the positive photosensitive resin composition is used at a solid content concentration arbitrarily selected from a range of solid content concentration of 1% to 50% by mass, the coating film can be easily formed.
• the coating film containing the positive photosensitive resin composition of the present invention can be formed, for example, by applying the positive photosensitive resin composition of the present invention on a silicon wafer, a glass plate, a ceramic substrate, or a substrate having an oxide film or a nitride film, using a known method such as spin-coating, immersing, and printing, and then pre-drying the composition at a temperature of 60° C. to 160° C., preferably 70° C. to 130° C.
• the coating film After the formation of the coating film, the coating film is exposed to an ultraviolet (UV) ray or the like using a mask having a predetermined pattern, and the film is developed with an alkaline developer to wash away an exposed part. As a result of this, a relief pattern having a sharp (distinct) edge face is formed on a substrate.
• UV ultraviolet
• the developer used in this process is not particularly limited so long as the developer is an alkaline aqueous solution, and examples thereof include an aqueous solution of an alkali metal hydroxide such as potassium hydroxide, sodium hydroxide, potassium carbonate and sodium carbonate; an aqueous solution of quaternary ammonium hydroxide such as tetramethylammonium hydroxide, tetraethylammonium hydroxide and choline; and an aqueous solution of amine such as ethanolamine, propylamine and ethylenediamine.
• an alkali metal hydroxide such as potassium hydroxide, sodium hydroxide, potassium carbonate and sodium carbonate
• quaternary ammonium hydroxide such as tetramethylammonium hydroxide, tetraethylammonium hydroxide and choline
• amine such as ethanolamine, propylamine and ethylenediamine.
• the alkaline developer generally an alkaline aqueous solution of 10% by mass or less is used, and industrially, an alkaline aqueous solution of 0.1% to 3.0% by mass is used.
• the alkaline developer may contain alcohols, a surfactant, or the like, preferably in an amount of around 0.05% to 10% by mass.
• the temperature of the alkaline developer can be arbitrarily selected.
• the solubility of an exposed part is high, so that the development using the alkaline developer can be easily performed at room temperature.
• the cured film can be formed with the relief pattern, having excellent electric properties due to low water absorbing properties, and favorable heat resistance and chemical resistance.
• the film can be used in electric/electronic devices, semiconductor devices, display devices and the like.
• the cured film obtained from the positive photosensitive resin composition of the present invention has such a characteristic effect that the cured film contains no inorganic ion, it is very useful in an insulating film and a diaphragm material for an organic electroluminescent (EL) element or a light-emitting diode (LED), in which a damage of a light-emitting element caused by inorganic ions becomes a serious problem, or in a buffer coating largely affected by the presence or absence of ion-migration of inorganic ions in a copper wiring in a semiconductor package.
• EL organic electroluminescent
• LED light-emitting diode
• BAHF 2,2′-bis(3-amino-4-hydroxyphenyl)hexafluoropropane
• BAPF bis(3-amino-4-hydroxyphenyl)methane
• AHPK 3,3′-diamino-4,4′-dihydroxybenzophenone
• AHPE 3,3′-diamino-4,4′-dihydroxy-phenylether
• BAPA 2,2′-bis(3-amino-4-hydroxyphenyl)propane
• AHPA (3-amino-4-hydroxy)phenyl (3-amino-4-hydroxy)anilide
• BSDA bis(3-amino-4-hydroxyphenyl)sulfide
• APDS bis(3-aminopropyl)-1,1,3,3-tetramethyldisiloxane
• ODA 4,4′-diaminodiphenylether DA4P: 1,3-bis(4-aminophenoxy)benzene ABA:
• CD coumarin dimer
• P200 (manufactured by Toyo Gosei Co., Ltd.; trade name: P-200; a photosensitizer synthesized by a condensation reaction of 1 mol of 4,4′-(1-(4-(1-(4-hydroxyphenyl)-1-methylethyl)phenyl)ethylidene)bisphenol and 2 mol of 1,2-naphthoquinone-2-diazide-5-sulfonyl chloride)
• TMAH 1,2-naphthoquinone-2-diazide-5-sulfonyl chloride
• Mw weight average molecular weight
• Mw molecular weight distribution
• polymer solutions P1 to P10 and H1
• a photosensitizer P200
• a fluorinated surfactant manufactured by Dainippon Ink and Chemicals, Incorporated; MEGAFAC R-30
• the positive photosensitive resin compositions obtained according to Table 2 were evaluated by the following methods. The used developing conditions and the evaluation results are shown in Table 3.
• the positive photosensitive resin compositions of Examples 1 to 10 and Comparative Example 1 were applied on indium tin oxide (ITO) substrates (manufactured by Sanyo Vacuum Industries Co., Ltd.) having a step part of 50 mm ⁇ 50 mm using a spin coater. Subsequently, the compositions were prebaked on a hot plate at a temperature of 100° C. for 120 seconds to form coating films. The film thickness at this time is shown in Table 3 as “film thickness before curing”. Here, for the measurement of the film thickness, a contact film thickness measuring apparatus (Dektak 3ST; manufactured by ULVAC, Inc.) was used.
• Dektak 3ST manufactured by ULVAC, Inc.
• a UV light was irradiated to the obtained coating films by an ultraviolet irradiation device (PLA-600; manufactured by Cannon Inc.) through a test mark of line/space, on which 1/1 to 100/100 are described, for 16 seconds (100 mJ/cm 2 ).
• PPA-600 ultraviolet irradiation device
• the coating films were immersed in 2.38% by weight TMAH and developed, and then subjected to a cleaning process using pure water for 20 seconds to obtain coating films in which patterns are formed.
• the time for the development was employed as shown in Table 3 in each Example and Comparative Example as developing time.
• the film thickness of an unexposed part after the development was measured by the above contact film thickness measuring apparatus.
• the measured film thickness is shown in Table 3 as “film thickness after development”.
• the coating film after the development was observed by a microscope to confirm the minimum line/space size of the obtained pattern.
• the pattern size is shown in Table 3.
• Example 1 TABLE 3 Development evaluation Film thickness Film thickness before curing Developing time after development Pattern size Developing No. ( ⁇ m) (second) ( ⁇ m) ( ⁇ m) properties*
• Example 1 0.716 30 0.699 20 A
• Example 2 1.031 20 1.030 10 A
• Example 3 1.533 20 0.836 10 A
• Example 4 1.305 10 0.933 20 B
• Example 5 1.181 20 0.853 20 B
• Example 6 3.699 30 1.107 40 C
• Example 7 2.052 10 0.683 50 C
• Example 8 1.670 10 0.591 50 C
• Example 9 1.261 50 1.260 10
• B Positive pattern of around 10 ⁇ m to 20 ⁇ m can be formed.
• C Positive pattern of around 20 ⁇ m to 50 ⁇ m can be formed.
• D Exposed part cannot be entirely removed,
• Comparative Example 1 Although a film thickness loss in the unexposed part was not observed, in the pattern bottom part of the exposed part, there were observed many development residues, so that the pattern formation was failed.

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• 2008
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  • 2008-05-27 JP JP2009517811A patent/JP5246441B2/ja active Active
  • 2008-05-27 EP EP08764754A patent/EP2159637A4/fr not_active Withdrawn
  • 2008-05-27 WO PCT/JP2008/059726 patent/WO2008149730A1/fr active Application Filing
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• 2016
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