US20100040534A1 - Radical generating apparatus and zno-based thin film - Google Patents

Radical generating apparatus and zno-based thin film Download PDF

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Publication number
US20100040534A1
US20100040534A1 US12/450,146 US45014608A US2010040534A1 US 20100040534 A1 US20100040534 A1 US 20100040534A1 US 45014608 A US45014608 A US 45014608A US 2010040534 A1 US2010040534 A1 US 2010040534A1
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Prior art keywords
generating apparatus
radical generating
zno
nitrogen
discharging tube
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English (en)
Inventor
Ken Nakahara
Hiroyuki Yuji
Kentaro Tamura
Shunsuke Akasaka
Masashi Kawasaki
Akira Ohtomo
Atsushi Tsukazaki
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Rohm Co Ltd
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Rohm Co Ltd
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Assigned to ROHM CO., LTD. reassignment ROHM CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: AKASAKA, SHUNSUKE, KAWASAKI, MASASHI, NAKAHARA, KEN, OHTOMO, AKIRA, TAMURA, KENTARO, TSUKAZAKI, ATSUSHI, YUJI, HIROYUKI
Publication of US20100040534A1 publication Critical patent/US20100040534A1/en
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H3/00—Production or acceleration of neutral particle beams, e.g. molecular or atomic beams
    • H05H3/02—Molecular or atomic beam generation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Definitions

  • the present invention relates to: a radical generating apparatus that, in formation of a film of a compound containing an element which is gaseous when uncombined with other elements, brings a gaseous element into a plasma state and supplies the gaseous element; and a ZnO-based thin film.
  • oxides there exist, for example, nitrides, oxides and the like as compounds each containing an element which is gaseous when uncombined with other elements.
  • the oxides such as superconductive oxides represented by YBCO, transparent conductive materials represented by ITO, and giant magnetic resistance materials represented by (LaSr)MnO 3 , have been one of the hottest research fields for having various properties which conventional semiconductors, metals and organic substances can not achieve.
  • thin film forming methods for oxides are limited to sputtering, PLD (pulse laser disposition) and the like, by which it is difficult to produce lamination structures as seen in semiconductor devices.
  • sputtering usually has difficulty in obtaining a crystal thin film
  • PLD pulse laser disposition
  • a plasma assisted molecular beam epitaxy has been practiced as a method by which lamination structures as seen in semiconductor devices can be produced.
  • ZnO has been slow in growing as a semiconductor device material although the multifunctionality, its high potential of light emission potential and the like thereof have been attracting attention. That is because the largest drawback thereof is that, since subjecting ZnO to acceptor doping has been difficult, p-type ZnO has been unobtainable.
  • a radical generating apparatus is used as an apparatus that supplies a gaseous element when oxygen, which is a gaseous element, is supplied in a case of fabricating a ZnO thin film, or when the doping with nitrogen, which is a gaseous element, is performed for the purpose of obtaining p-type ZnO, as described above (for example, refer to Patent Document 1).
  • the radical generating apparatus includes: a hollow discharging chamber 11 ; a high-frequency coil (an RF coil) 14 wound around an outer side of the discharging chamber 11 ; a lid 12 provided to the exit side of the discharging chamber 11 ; a gas introducing bottom plate 13 provided to the entrance side of the discharging chamber 11 ; a gas supplying tube 17 connected to the gas introducing bottom plate 13 ; a support base 18 ; a support post 16 ; a shutter 15 ; a high-frequency power source 19 ; and the like.
  • a high-frequency coil an RF coil
  • a nitrogen source such as a liquid nitrogen tank is connected in a case requiring a nitrogen element
  • an oxygen source such as a liquid oxygen tank is connected in a case requiring an oxygen element.
  • a gaseous element is supplied to the discharging chamber 11 from the gas supplying tube 17 .
  • Plasma atoms are generated with a high frequency wave being applied to the gaseous element by the high-frequency coil 14 .
  • the plasma atoms are released from an emission hole provided in the lid 12 .
  • These plasma atoms are used for formation of a ZnO thin film or for doping with a p-type impurity.
  • Patent Document 1 JP-A-7-14765
  • Non-patent Document 1 A. Tsukazaki et al., JJAP 44 (2005) L643
  • Non-patent Document 2 A. Tsukazaki et al., Nature Material 4 (2005) 42
  • the plasma atoms are high-energy particles, a sputtering phenomenon is caused by the plasma atoms, atoms composing the discharging chamber 11 , the lid 12 , the gas introducing bottom plate 13 and the like are pushed out to be mixed among the plasma atoms, which not only makes a high-purity gaseous element unobtainable but also forms a contamination source, whereby there has been not only a problem that obtaining desired composition and doping is difficult but also a problem that introduction of an unintended impurity makes controllability over ion concentrations difficult.
  • the present invention was invented in order to solve the above described problems, and an object of the present invention is to provide: a radical generating apparatus that increases a purity of emitted radical atoms, prevents contamination with impurities, and is improved in controllability over ion concentration; and a ZnO-based thin film prevented from being contaminated with impurities.
  • an invention according to claim 1 is a radical generating apparatus, which generates plasma by introducing a gas into a discharging tube, characterized in that at least a part of a wall face, with which the gas comes into contact, of the discharging tube is formed of a silicon-based compound.
  • an invention according to claim 2 is the radical generating apparatus according to claim 1 , characterized in that an entirety of the wall face, with which the gas comes into contact, of the discharging tube is formed of a silicon-based compound.
  • an invention according to claim 3 is the radical generating apparatus according to any one of claims 1 and 2 , characterized in that a shutter provided to the plasma emission side of the discharging tube is formed of a silicon-based compound.
  • an invention according to claim 4 is the radical generating apparatus according to any one of claims 1 to 3 , characterized in that the silicon-based compound is composed of quartz.
  • an invention according to claim 5 is the radical generating apparatus according to claim 4 , characterized in that a content of a III-group element in the quartz is not more than 1 ppm.
  • an invention according to claim 6 is the radical generating apparatus according to claim 5 , characterized in that the III-group element is Al.
  • an invention according to claim 7 is the radical generating apparatus according to any one of claims 1 to 6 , characterized in that, as to the III-group element, the gas introduced into the discharging tube is nitrogen or a nitrogen oxide.
  • an invention according to claim 8 is a ZnO-based thin film characterized in that a boron concentration in the film is not more than 1 ⁇ 10 16 cm ⁇ 3 .
  • an invention according to claim 9 is a ZnO-based thin film characterized in that an Al concentration in the film is not more than 1 ⁇ 10 16 cm ⁇ 3 .
  • the radical generating apparatus in the radical generating apparatus according to the present invention, at least a part of a wall face, on which a gas that serves as a source of plasma atoms and is introduced into the discharging tube comes into contact with the discharging tube, is formed of a silicon-based compound. Accordingly, the radical generating apparatus according to the present invention can, as compared to conventional one, involve only a very small amount of impurities pushed out, by sputtering, from inside the discharging tube, increase a purity of plasma atoms, and control contamination. Additionally, by having an entirety of the discharging tube wall face, with which a supplied gas comes into contact, formed of a silicon-based compound, a purity of plasma atoms can be further increased. Additionally, a less contaminated ZnO-based thin film can be fabricated by increasing a purity of plasma atoms.
  • FIG. 1 is a view showing a structure of a radical generating apparatus of the present invention.
  • FIG. 2 is a chart showing impurity concentrations in a ZnO film in a case using the radical generating apparatus of the present invention.
  • FIG. 3 is a chart showing impurity concentrations in a ZnO film in a case using a conventional radical generating apparatus.
  • FIG. 4 is a chart showing impurity concentrations in a ZnO film in a case using, as a constituent material of the radical generating apparatus of the present invention, quartz containing a small amount of impurities.
  • FIG. 5 is a chart showing impurity concentrations in a ZnO film in a case using, as a constituent material of the radical generating apparatus of the present invention, quartz containing a large amount of impurities.
  • FIG. 6 is a view showing a structure of a generally used radical generating apparatus.
  • FIG. 1 shows a schematic structure of a radical generating apparatus of the present invention.
  • a high-frequency coil 4 is wound around an outer side of a discharging tube 10 , and a terminal of the high-frequency coil 4 is connected to a high-frequency power source 9 .
  • the discharging tube 10 is constituted by a discharging cylinder 1 , a lid 2 and a gas introducing bottom plate 3 . Additionally, a support base 8 is provided, a rotatable support post 6 is arranged on the support base 8 , and a shutter 5 is connected to the rotatable support post 6 .
  • the gas introducing bottom plate 3 is connected to the gas supplying tube 7 on a lower side, and introduces into a discharging cylinder 1 a gas supplied to the gas supplying tube 7 .
  • the discharging cylinder 1 has a hollow structure, and a high frequency voltage (electric filed) is applied to the introduced gas by the high-frequency coil 4 , whereby a plasma state is formed.
  • An emission hole (unillustrated) is provided in the lid 2 , and plasma generated in the discharging cylinder 1 is emitted from this emission hole.
  • the shutter 5 is configured to block and open an upper part of the emission hole bored in the lid 2 by rotation of the support post 6 , and, in a case not requiring supply of plasma atoms, the shutter 5 is put in a position blocking an upper side of the emission hole bored in the lid 2 of the shutter 5 .
  • the support post 6 rotates to move the shutter 5 , and opens the upper part of the emission hole bored in the lid 2 , thereby introducing into a growth chamber the plasma atoms (an excitation gas in the drawing) emitted from the discharging tube 10 .
  • an entirety or a part thereof are formed of a silicon-based compound in the present invention.
  • the discharging cylinder 1 and the gas introducing bottom plate 3 which constitute the discharging tube 10 at least wall faces thereof with which a raw material gas comes into direct contact are configured to be composed of a silicon-based compound because the raw material gas passes through the insides thereof, and also because plasma atoms when a plasma state has been formed come into contact with the wall faces of the respective components.
  • meanings of having a part formed of a silicon-based compound include: having, for example, a part of an inner wall face of the discharging cylinder 1 composed of a silicon-based compound; and employing a dual structure where, while only the inner wall face of the discharging cylinder 1 is composed of a silicon-based compound, an outer side thereof is formed of another material.
  • SiO 2 , SiN, SiON or the like may be used as the silicon-based compound, and it is SiO 2 that is the most stable and thereby desirable.
  • the lid 2 , the discharging cylinder 1 and the gas introducing bottom plate 3 , which constitutes the discharging tube 10 are described as separate components in FIG. 1 , a part or an entirety thereof may be integrated by being fused.
  • FIG. 2 shows B (boron) concentrations in a nitrogen-doped ZnO film in a case where the radical generating apparatus of the present invention was used for generating nitrogen radicals, specifically, a case where an entirety of the discharging tube 10 , and the shutter 5 were composed of quartz (a major component of which is SiO 2 ).
  • Y 1 indicates Zn (zinc) secondary ion intensities in the nitrogen-doped ZnO film;
  • X 1 indicates boron concentrations in the nitrogen-doped ZnO film; and a horizontal axis indicates depths (film thickness).
  • the concentrations of boron which was an impurity in the nitrogen-doped ZnO film, took small values at all depths. Additionally, it can be seen that, while being in a radical condition that a flux of a raw material gas was changed to 0.3 sccm and to 2 sccm along the way with a power of the high frequency power source being set to 300 W, the impurity boron concentrations did not increase even though the flux of the raw material gas increased.
  • the concentrations of boron, which was an impurity in the nitrogen-doped ZnO film were only remaining at about background level as can be seen also by comparison thereof with FIG. 3 described later, and, with respect to the levels, it can be found that the boron concentrations in the film can be formed into not more than 1 ⁇ 10 16 cm ⁇ 3 as shown in FIG. 2 .
  • concentrations of B (boron) existing in a nitrogen-doped ZnO film are shown in FIG. 3 .
  • Y 2 indicates Zn (zinc) secondary ion intensities in the nitrogen-doped ZnO film;
  • X 2 indicates boron concentrations in the nitrogen-doped ZnO film; and
  • a horizontal axis indicates depths (film thickness) as in the case of FIG. 2 .
  • a radical condition was that, while a power of the high frequency power source was set to 400 W, a flux of a raw material gas was set to 0.1 sccm.
  • concentrations of boron which was an impurity in the nitrogen-doped ZnO film, took larger values even with a flux of a raw material gas being smaller than that of FIG. 2 , whereby it can be seen that a configuration of the present invention in which a material of the discharging tube and the shutter was made of quartz showed decreases in B concentration to values being at least one digit smaller than those of the conventional one made of PBN, and thus showed very sharp decreases in impurity in the film as compared to the conventional one.
  • FIGS. 4 and 5 purities of quartz in use massively influence impurity concentrations in a film, and data thereon are shown in FIGS. 4 and 5 . While being mainly composed of SiO 2 , quartz is contaminated with a small amount of impurities in many cases.
  • N 1 indicates Al concentrations in a ZnO film and M 1 indicates zinc secondary ion intensities in the ZnO film.
  • M 1 indicates zinc secondary ion intensities in the ZnO film.
  • FIG. 5 in a case where an Al concentration contained in quartz was more than 1 ppm, N 2 indicates Al concentrations in a ZnO film and M 2 indicate zinc secondary ion intensities in the ZnO film.
  • a region having shown a sharp decrease in zinc secondary ion intensity in the ZnO film corresponds to a sapphire substrate provided as a growth substrate.
  • a ZnO film can be formed in a way that Al concentrations in the ZnO film is not more than 1 ⁇ 10 16 cm ⁇ 3 as can be seen from background levels shown in FIG. 4 .
  • a less contaminated gaseous element essential for forming a high-purity and high-quality thin film can be supplied according to the radical generating apparatus of the present invention.
  • a formation method of a ZnO-based thin film sensitive to contamination will be briefly described.
  • a ZnO substrate is put in a load lock chamber, and is heated for about 30 minutes at 200° C. in a vacuum environment of about 1 ⁇ 10 ⁇ 5 to 1 ⁇ 10 ⁇ 6 Torr for moisture removal. Then, after passing through a transportation chamber having vacuum of about 1 ⁇ 10 ⁇ 9 Torr, the substrate is introduced into a growth chamber having a wall face having been cooled with liquid nitrogen, and a ZnO-based thin film is grown by use of an MBE method.
  • Zn is supplied in the form of a Zn molecular beam by being heated to about 260 to 280° C. and sublimated.
  • Mg is supplied also in the form of a Mg molecular beam by use of high-purity Mg of 6 N and by being heated to about 300 to 400° C. and sublimated from a cell of the same structure.
  • Oxygen is supplied as an oxygen source by use of O 2 gas of 6 N after: plasma is generated with this O 2 gas being supplied at about 0.1 sccm to 5 sccm to a radical generating apparatus through a stainless steel tube having an electrolytically polished inner face and with RF high frequency waves of about 100 to 300 W being applied thereto, the radical generating apparatus having a small emission orifice formed in a cylinder and being provided with a discharging tube composed of quartz; and the O 2 gas is thereby brought into an oxygen radical state where reaction activity is heightened.
  • Plasma is essential, and no ZnO-based film is formed only with a raw gas of O 2 being introduced.
  • Nitrogen is supplied as a nitrogen source by use of a gas of pure N2 or a nitrogen oxide after: plasma is generated with this gas being supplied at about 0.1 sccm to 5 sccm to the radical generating apparatus, which is the same as above one used for oxygen, and with RF high frequency waves of about 50 W to 500 W being applied thereto; and the gas is thereby brought into a nitrogen radical state where reaction activity is heightened. Thereby, nitrogen doping is performed to obtain a p-type thin film. Note that, in a case using a nitrogen oxide in the doping, the nitrogen oxide may be used singly since a nitrogen-doped ZnO-based film can be fabricated without oxygen radicals being supplied and singly with the nitrogen oxide.

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JP2007067390A JP2008223123A (ja) 2007-03-15 2007-03-15 ラジカル発生装置
JP2007-067390 2007-03-15
PCT/JP2008/054731 WO2008114719A1 (ja) 2007-03-15 2008-03-14 ラジカル発生装置及びＺｎＯ系薄膜

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JP2015062255A (ja) * 2014-12-15 2015-04-02 国立大学法人名古屋大学 分子線エピタキシー装置
CN111128683A (zh) * 2019-12-30 2020-05-08 中国科学院长春光学精密机械与物理研究所 一种利用分子束外延技术制备p型氧化锌薄膜的方法

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TWI424795B (zh) * 2009-12-21 2014-01-21 Ind Tech Res Inst 電漿激發裝置

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JP2015062255A (ja) * 2014-12-15 2015-04-02 国立大学法人名古屋大学 分子線エピタキシー装置
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