US20090042486A1 - Polishing method, substrate manufacturing method, and electronic apparatus manufacturing method - Google Patents
Polishing method, substrate manufacturing method, and electronic apparatus manufacturing method Download PDFInfo
- Publication number
- US20090042486A1 US20090042486A1 US12/155,133 US15513308A US2009042486A1 US 20090042486 A1 US20090042486 A1 US 20090042486A1 US 15513308 A US15513308 A US 15513308A US 2009042486 A1 US2009042486 A1 US 2009042486A1
- Authority
- US
- United States
- Prior art keywords
- carrier
- work
- polishing
- substrate
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 202
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 title claims description 87
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 238000004140 cleaning Methods 0.000 claims abstract description 60
- 125000006850 spacer group Chemical group 0.000 claims description 32
- 239000000853 adhesive Substances 0.000 claims description 24
- 230000001070 adhesive effect Effects 0.000 claims description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 2
- 239000012530 fluid Substances 0.000 description 30
- 239000011521 glass Substances 0.000 description 28
- 239000002002 slurry Substances 0.000 description 26
- 230000007246 mechanism Effects 0.000 description 20
- 239000000428 dust Substances 0.000 description 12
- 230000003746 surface roughness Effects 0.000 description 9
- 238000012546 transfer Methods 0.000 description 9
- 238000009529 body temperature measurement Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000007730 finishing process Methods 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000013013 elastic material Substances 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 206010012735 Diarrhoea Diseases 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000007779 soft material Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical group [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
Definitions
- FIG. 25 is a flowchart that describes the details of the step 1200 shown in FIG. 21 .
- FIG. 33 is a perspective view of MEMS chips shown in FIG. 28 .
- FIG. 3 is a schematic perspective view of an embodiment where the fixing member is an adhesive 120 in the carrier 110 shown in FIG. 2 .
- the adhesive 120 of this embodiment is alcowax®.
- the adhesive 120 bonds the carrier 110 and the work W together in the hole 113 .
- a clearance J with a constant width can be created around the work W when the work W is housed in the hole 113 .
- the fixing member contacts and fixes the work W in the hole 113 .
- the fixing member prevents vibrations of the work W in the hole 113 .
- a height direction of the carrier 110 is a Z direction
- a plane perpendicular to the Z direction is a XY plane
- the work W in the hole 113 can vibrate on the XY plane. When the work W does not vibrate, it does not collide with the carrier 110 or generate dusts.
- Dusts may be removed once they occur from both surfaces Wa and Wb of the work W.
- the following embodiment utilizes a pattern of a convex and a concave (a convexo-concave pattern) formed on at least one of both surfaces 112 a and 112 b of the carrier 110 to remove dusts that occur during polishing, from between the carrier 110 and the polishing surface as quickly as possible.
- a description will now be given of the embodiment that forms the convexo-concave pattern as grooves.
- FIG. 11 is a plan view of a carrier 110 G.
- the top surface 112 a of the carrier 110 G has a plurality of grooves 116 C and 116 D configured to remove dusts. Except for the grooves 116 C and 116 D, the carrier 110 G is identical to the carrier 110 shown in FIG. 2 .
- a pair of the grooves 116 D diverge from the same position on the groove 116 C apart from the center 111 a of the carrier 110 .
- the diverging direction is not limited, but the groove 116 D is parallel to the adjacent groove 116 C at the diverging side in FIG. 11 .
- the number of diverging points is not limited to one, and the diverged groove may further be diverged.
- FIG. 14 is a plan view of a carrier 110 J.
- the top surface 112 a of the carrier 110 J has a plurality of grooves 116 G configured to remove dusts. Except for the grooves 116 G, the carrier 110 J is identical to the carrier 110 shown in FIG. 2 .
- a plurality of the grooves 116 G vertically extends from the center 111 a of the carrier 110 J.
- the vortex extends clockwise in this embodiment but may also extend counterclockwise. The interval of the vortex may be constant or may not be constant.
- the curved groove may extend concentrically, spirally, or vertically.
- the grooves may also extend in any curved line, such as a quadratic curve, elliptic curve, or any other curves.
- Each of the grooves 116 to 116 G has a width and depth of several tens of ⁇ m, and forms an isosceles triangular section.
- each of the grooves 116 to 116 G has a V-shaped section but its sectional shape is not limited. While this embodiment forms the grooves 116 to 116 G on the top surface 112 a of each of the carriers 110 D- 110 K in the gravity direction, the bottom surface 112 b of the carriers 110 D to 110 K may also have these grooves additionally or exclusively.
- the driving force of the motor 130 is transferred to the upper stool 160 via the gearbox 150 , and the upper stool 160 rotates in opposite directions to that of the lower stool 140 .
- the tachogenerator 168 is placed around the rotation axis of the upper stool 160 , and outputs an analog voltage corresponding to the rotation rate of the upper stool 160 to the control unit 180 .
- the pad 142 has a convexo-concave pattern 143 on the pad surface 142 a to remove dusts generated during polishing from between the carrier 110 and the polishing surface as quickly as possible.
- the convexo-concave pattern 143 may be the groove shown in FIG. 8 to FIG. 16 , through-holes, or any other patterns.
- FIG. 19A is a schematic sectional view showing a sun gear 156 , the carrier 110 , an outer gear 158 , a first dustproof mechanism 200 , and a second dustproof mechanism 240 .
- This embodiment provides the sun gear 156 around the shaft 141 on the lower stool 140 under the gearbox 150 , and allows the sun gear 156 to rotate with the shaft 141 .
- An alternative embodiment provides the sun gear 156 around the shaft 161 on the upper stool 160 over the gearbox 150 , and allows the sun gear 156 to rotate with the shaft 161 .
- the sun gear 156 has teeth (cogs) 156 a.
- the gearbox 150 serves as the sun gear and rotates.
- the carrier 110 serves as the planetary gear, and rotates and revolves around the gearbox 150 .
- the outer gear 158 is fixed.
- the wiper 220 serves to prevent dust, which has been generated due to the engagements between the teeth 118 of the carrier 110 and the teeth 156 a of the sun gear 156 , from moving to the inside of the contact location 112 a 1 on the top surface 112 a of the carrier 110 .
- the second block 250 has an annular shape, and is placed around and maintained stationary relative to the shaft 161 . However, it is optional that the second block 250 may be maintained stationary relative to the shaft 161 or rotate with the upper stool 160 .
- the second block 250 includes convexes 252 a and 252 b, a groove 252 c, a convex 255 , an inner circumferential surface 256 , and an outer circumferential surface 257 .
- FIG. 21 is a flowchart for explaining an operation of the polishing System 300 .
- the control unit 180 increases the supply amount of the slurry S in increasing the polishing amount as a whole.
- the control unit 180 reduces the supply amount of the slurry S in reducing the polishing amount as a whole. In other words, according to this embodiment, when the polishing amounts of the lower and upper stools 140 and 160 are different, the supply amount control over the slurry supply unit 175 cannot cancel this difference.
- the control unit 180 supplies the current to the motor 130 , and rotates the lower stool 140 (step 1204 ) as well as in the step 1202 .
- FIG. 28 is a schematic sectional view of a MEMS sensor 400 .
- the MEMS sensor 400 includes a circuit substrate 410 , a pair of glass substrates 420 a and 420 b, a MEMS chip (electrical component) 430 , and wiring parts 440 and 442 .
- the MEMS sensor 400 joins a pair of the glass substrates 420 a and 420 b to both sides of the MEMS chip 430 , and need the degree of flatness Ra of about 5 nm on surfaces 421 a and 421 b of the glass substrates 420 a and 420 b opposite to the MEMS chip 430 . It is conceivable to planarize only surfaces 421 a and 421 b of the glass substrates 420 a and 420 b opposite to the MEMS chip 430 , but the manufacture becomes easier when the front and back surfaces of the glass substrates 420 a and 420 b are not distinguished.
- a circuit board 410 is manufactured by using the known technology (step 2100 ).
- the circuit board 410 has the wiring pattern 412 on its front surface.
- the MEMS sensor 400 is manufactured (step 2400 ).
- pair of the glass substrates 420 a and 420 b of the conductive material 426 are connected to the wiring part 438 of the MEMS chip 430 .
- the MEMS chip 430 is sealed in vacuum by joining the anodes of a pair of the glass substrates 420 a and 420 b to both sides of the wall 432 of the MEMS chip 430 .
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007208395A JP2009039825A (ja) | 2007-08-09 | 2007-08-09 | 研磨方法、基板及び電子機器の製造方法 |
JP2007-208395 | 2007-08-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
US20090042486A1 true US20090042486A1 (en) | 2009-02-12 |
Family
ID=40003083
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/155,133 Abandoned US20090042486A1 (en) | 2007-08-09 | 2008-05-29 | Polishing method, substrate manufacturing method, and electronic apparatus manufacturing method |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090042486A1 (de) |
EP (1) | EP2025468A3 (de) |
JP (1) | JP2009039825A (de) |
KR (1) | KR20090015790A (de) |
CN (1) | CN101362311A (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013235898A (ja) * | 2012-05-07 | 2013-11-21 | Shirasaki Seisakusho:Kk | 両面研磨装置用キャリアの製造方法及びこれを用いた両面研磨装置並びに両面研磨方法 |
CN106312713B (zh) * | 2016-08-30 | 2018-07-13 | 重庆凯龙科技有限公司 | 隔热板平面度加工装置 |
WO2018190780A1 (en) * | 2017-04-12 | 2018-10-18 | Ozyegin Universitesi | Chemical mechanical planarization of gallium nitride |
JP7212242B2 (ja) * | 2018-08-21 | 2023-01-25 | 富士紡ホールディングス株式会社 | 被研磨物の保持具 |
CN114800055A (zh) | 2022-04-28 | 2022-07-29 | 浙江美迪凯光学半导体有限公司 | 一种方形片的抛光工艺 |
CN115106871A (zh) * | 2022-08-29 | 2022-09-27 | 成都中科卓尔智能科技集团有限公司 | 一种半导体材料表面缺陷柔性高精度修复装置及工艺 |
CN118456259B (zh) * | 2024-07-09 | 2024-09-13 | 西安澳秦新材料有限公司 | 一种氮化硅基板生产抛光装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4081928A (en) * | 1974-05-16 | 1978-04-04 | Texas Instruments Incorporated | Silicon slice carrier block and plug assembly |
US6062949A (en) * | 1998-01-26 | 2000-05-16 | Speedfam Co., Ltd. | Polishing amount control system and method for same |
US20020102931A1 (en) * | 2001-01-31 | 2002-08-01 | International Business Machines Corporation | Work holding member for mechanical abrasion, abrading method, and abrading machine |
US20080233840A1 (en) * | 2007-03-19 | 2008-09-25 | Siltronic Ag | Method For The Simultaneous Grinding Of A Plurality Of Semiconductor Wafers |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2552305B2 (ja) * | 1987-09-30 | 1996-11-13 | 東芝機械株式会社 | 両面研磨装置 |
JP2000305069A (ja) | 1999-04-21 | 2000-11-02 | Sanyo Electric Co Ltd | 液晶表示用パネルの製造方法 |
-
2007
- 2007-08-09 JP JP2007208395A patent/JP2009039825A/ja not_active Withdrawn
-
2008
- 2008-05-29 US US12/155,133 patent/US20090042486A1/en not_active Abandoned
- 2008-05-30 EP EP08157358A patent/EP2025468A3/de not_active Withdrawn
- 2008-05-30 KR KR1020080050948A patent/KR20090015790A/ko not_active Application Discontinuation
- 2008-05-30 CN CNA2008100998883A patent/CN101362311A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4081928A (en) * | 1974-05-16 | 1978-04-04 | Texas Instruments Incorporated | Silicon slice carrier block and plug assembly |
US6062949A (en) * | 1998-01-26 | 2000-05-16 | Speedfam Co., Ltd. | Polishing amount control system and method for same |
US20020102931A1 (en) * | 2001-01-31 | 2002-08-01 | International Business Machines Corporation | Work holding member for mechanical abrasion, abrading method, and abrading machine |
US6554689B2 (en) * | 2001-01-31 | 2003-04-29 | International Business Machines Corporation | Work holding member for mechanical abrasion, abrading method, and abrading machine |
US20080233840A1 (en) * | 2007-03-19 | 2008-09-25 | Siltronic Ag | Method For The Simultaneous Grinding Of A Plurality Of Semiconductor Wafers |
Also Published As
Publication number | Publication date |
---|---|
JP2009039825A (ja) | 2009-02-26 |
EP2025468A2 (de) | 2009-02-18 |
EP2025468A3 (de) | 2009-04-01 |
CN101362311A (zh) | 2009-02-11 |
KR20090015790A (ko) | 2009-02-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: FUJITSU LIMITED, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TOKURA, FUMIHIKO;TAKEUCHI, MITSUO;REEL/FRAME:021067/0164 Effective date: 20080509 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |