US20080199627A1 - Catalytic treatment method, electroless plating method, and method for forming circuit using electroless plating - Google Patents

Catalytic treatment method, electroless plating method, and method for forming circuit using electroless plating Download PDF

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US20080199627A1
US20080199627A1 US12/060,159 US6015908A US2008199627A1 US 20080199627 A1 US20080199627 A1 US 20080199627A1 US 6015908 A US6015908 A US 6015908A US 2008199627 A1 US2008199627 A1 US 2008199627A1
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treatment step
copper
substrate
tin
bringing
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Kenichi Mitsumori
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PROFOUNDA LLC
Alps Alpine Co Ltd
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Alps Electric Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1886—Multistep pretreatment
    • C23C18/1889—Multistep pretreatment with use of metal first
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1605—Process or apparatus coating on selected surface areas by masking
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1689—After-treatment
    • C23C18/1692—Heat-treatment
    • C23C18/1696—Control of atmosphere
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
    • C23C18/2073—Multistep pretreatment
    • C23C18/208—Multistep pretreatment with use of metal first
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/28—Sensitising or activating
    • C23C18/285—Sensitising or activating with tin based compound or composition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/28—Sensitising or activating
    • C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • C23C18/405—Formaldehyde
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03—Metal processing
    • H05K2203/0315—Oxidising metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1157—Using means for chemical reduction

Definitions

  • the present invention relates to a catalytic treatment method which enables an electroless plating method to form a plating film on a substrate, an electroless plating method using this catalytic treatment method, and a method of forming a circuit using this electroless plating method.
  • an electroless plating method has been known as a method for forming a plating film on a substrate made of a glass, a ceramic, or the like, or further on a substrate made of a resin or the like.
  • this electroless plating method for example, after a catalyst layer is formed on a non-conductive glass substrate which is processed beforehand by a degreasing treatment, this glass substrate is immersed in a plating solution, so that a plating film is formed on the glass substrate.
  • a catalytic treatment method forming the catalyst layer on the glass substrate, because of a significantly high catalytic activity and the like, palladium has been generally used.
  • a catalytic treatment method in a catalytic treatment method forming a catalyst layer that enables an electroless plating method to form a plating film, a catalytic treatment method has been conceived which forms a catalyst layer using a reducing agent instead of using expensive palladium.
  • this catalytic treatment method for example, after a glass substrate is sequentially immersed in a tin compound aqueous solution containing a tin compound and a copper compound aqueous solution containing a copper compound, the substrate is immersed in a reducing agent aqueous solution containing a reducing agent, so that a catalyst layer is formed by reduction of metal copper.
  • a reducing agent aqueous solution containing a reducing agent
  • Patent Document 1 Japanese Unexamined Patent Application Publication No. 2002-309376
  • Patent Document 2 Japanese Unexamined Patent Application Publication No. 7-197266
  • an object of the present invention is to provide a catalytic treatment method capable of forming a catalyst layer, which enables an electroless plating method to be carried out, by an inexpensive and simple process without using palladium, an electroless plating method, and a method for forming a circuit using an electroless plating method.
  • a catalytic treatment method of the present invention comprises: a tin treatment step of bringing a substrate into contact with a tin compound aqueous solution containing a tin compound; after the tin treatment step, a copper treatment step of bringing the substrate into contact with a copper compound aqueous solution containing a copper compound; and after the copper treatment step, a diluted sulfuric acid treatment step of bringing the substrate into contact with diluted sulfuric acid.
  • the above copper compound aqueous solution preferably has sulfuric acid acidity.
  • the diluted sulfuric acid treatment step is performed after the tin treatment step and the copper treatment step, copper oxide is removed which is formed when metal copper is deposited by reaction between tin and copper, and the metal copper can be formed into a catalyst layer functioning as a catalyst. Accordingly, without using palladium, the catalyst layer can be formed on the substrate.
  • Another catalytic treatment method of the present invention comprises: a tin treatment step of bringing a substrate into contact with a tin compound aqueous solution containing a tin compound; and after the tin treatment step, a copper treatment step of bringing the substrate into contact with a copper compound aqueous solution which contains a sulfuric acid-acidic copper compound.
  • the catalyst layer can be formed on the substrate, and hence the process for forming a catalysis layer can be simplified.
  • the tin treatment step and the copper treatment step may be sequentially repeated a plurality of times.
  • the addition amount of copper to be used as the catalyst layer can be increased.
  • An electroless plating method of the present invention comprises: a tin treatment step of bringing a substrate into contact with a tin compound aqueous solution containing a tin compound; after the tin treatment step, a copper treatment step of bringing the substrate into contact with a copper compound aqueous solution containing a copper compound; after the copper treatment step, a diluted sulfuric acid treatment step of bringing the substrate into contact with diluted sulfuric acid; and after the diluted sulfuric acid treatment, a plating treatment step of bringing the substrate into contact with a plating solution to form a plating film.
  • the copper compound aqueous solution preferably has sulfuric acid acidity.
  • the diluted sulfuric acid treatment step is performed after the tin treatment step and the copper treatment step, copper oxide is removed which is formed when metal copper is deposited by reaction between tin and copper, and the metal copper can be formed in to a catalysis layer functioning as a catalyst. Accordingly, without using palladium, the catalyst layer can be formed on the substrate.
  • Another electroless plating method of the present invention comprises: a tin treatment step of bringing a substrate into contact with a tin compound aqueous solution containing a tin compound; after the tin treatment step, a copper treatment step of bringing the substrate into contact with a copper compound aqueous solution which contains a sulfuric acid-acidic copper compound; and after the copper treatment step, a plating treatment step of bringing the substrate into contact with a plating solution to form a plating film.
  • the catalyst layer can be formed on the substrate, and hence the process for forming a catalysis layer can be simplified.
  • a heat treatment step of heating the substrate in an atmosphere substantially containing no oxygen and hydrogen may be further performed.
  • the catalyst layer when the heat treatment step is performed after the plating treatment step, since it is believed that tin is bonded to a constituent element of the substrate at the interface thereof with the catalyst layer, the catalyst layer can be satisfactorily adhered to the substrate. Accordingly, it is believed that the adhesion between the plating film and the substrate can be improved.
  • a method for forming a circuit using an electroless plating method comprises: a tin treatment step of bringing a substrate into contact with a tin compound aqueous solution containing a tin compound; after the tin treatment step, a copper treatment step of bringing the substrate into contact with a copper compound aqueous solution containing a copper compound; after the copper treatment step, an oxidation treatment step of irradiating ultraviolet rays to an arbitrary portion of metal copper formed on the substrate by deposition so as to oxidize an exposed portion of the metal copper; a diluted sulfuric acid treatment step of bringing the substrate into contact with diluted sulfuric acid to remove oxide copper so as to form the metal copper into an arbitrary pattern; and a plating treatment step of bringing the substrate into contact with a plating solution to form a plating film using the metal copper as nuclei.
  • the copper oxide can be removed. Accordingly, without using palladium, the catalyst layer can be formed on the substrate, and without using a resist, a plating film having an arbitrary pattern can be formed.
  • the wavelength of the ultraviolet rays used in the oxidation treatment step is preferably 254 nm or less.
  • the wavelength of the ultraviolet rays irradiated in the oxidation treatment step is set to 254 nm or less, since metal copper can be sufficiently oxidized, the oxidation efficiency can be improved, and a circuit having a dense and superior pattern can be formed.
  • the method for forming a circuit using an electroless plating method, of the present invention may further comprise, after the diluted sulfuric acid treatment step and before the plating treatment step, a palladium treatment step of bringing the substrate into contact with a palladium solution containing palladium.
  • the rate of forming a plating film can be increased.
  • a catalyst layer can be formed which enables electroless plating to be carried out without using palladium, and hence the catalyst layer can be formed by an inexpensive and simple process.
  • a circuit pattern can be formed by a simple method without using a resist.
  • a material forming the resist can be omitted, and hence the manufacturing cost can be reduced.
  • FIG. 1 is a flowchart showing one embodiment of steps of a catalytic treatment method and an electroless plating method, of the present invention.
  • FIG. 2( a ) to 2 ( f ) are schematic views each showing a step of the electroless plating method shown in FIG. 1 .
  • FIG. 3 is a flowchart showing one embodiment of steps of a method for forming a circuit using an electroless plating method, of the present invention.
  • FIG. 4( a ) to 4 ( h ) are schematic views each showing a step of the method for forming a circuit using an electroless plating method shown in FIG. 3 .
  • FIG. 1 is a flowchart showing steps of an electroless plating method using the catalytic treatment method of this embodiment
  • FIGS. 2( a ) to 2 ( f ) are schematic views each showing a step of the electroless plating method of this embodiment.
  • the catalytic treatment method and the electroless plating method of the present invention are not limited to the case in which a copper plating film is formed and may also be applied when various plating films are formed.
  • a pretreatment step such as degreasing and/or cleaning, of removing impurities, such as dust and grease, adhering to a substrate 1 is performed thereon (ST 1 ).
  • This pretreatment step may be performed by a known method.
  • the substrate 1 used in this embodiment is not particularly limited, and for example, besides a glass substrate, a ceramic substrate, and the like, various substrates 1 , such as resin substrates using a polyimide, an epoxy resin, a polycarbonate, and the like, may also be used.
  • a first tin treatment step in which the substrate 1 is brought into contact with a tin aqueous solution containing a tin compound by immersion or the like is performed (ST 2 ).
  • tin compound used in the first tin treatment step for example, various water soluble tin compounds, such as stannous sulfate and stannous chloride, may be used, and in addition, a mixture of tin compounds may also be used.
  • a first copper treatment step in which the substrate 1 is brought into contact with a copper compound aqueous solution containing a copper compound by immersion or the like is performed (ST 3 ), and by reaction between tin and copper, metal copper is deposited on the substrate 1 .
  • the copper compound used in the first copper treatment step for example, various water soluble copper compounds, such as copper sulfate, copper chloride, copper nitrate, and copper acetate, may be used, and in addition, although a mixture of copper compounds may also be used, a sulfuric acid-acidic copper compound is preferably used.
  • a second tin treatment step in which the substrate 1 is brought into contact with a tin compound aqueous solution containing a tin compound by immersion or the like is performed (ST 4 ).
  • tin compound used in the second tin treatment step various water soluble tin compounds may be used as in the case of the tin compounds used in the first tin treatment step, and the same tin compound as that used in the first tin treatment step or a tin compound different therefrom may be used.
  • a second copper treatment step in which the substrate 1 is brought into contact with a copper compound aqueous solution containing a copper compound by immersion or the like is performed (ST 5 ).
  • various water soluble copper compounds may be used as in the case of the copper compounds used in the first copper treatment step, and the same copper compound as that used in the first copper treatment step or a copper compound different therefrom may be used.
  • the tin treatment step and the copper treatment step are repeated twice; however, the number of the steps to be repeated is not limited thereto, and the tin treatment step and the copper treatment step may be performed once or may be sequentially repeated three times or more.
  • a diluted sulfuric acid treatment step in which the substrate 1 is brought into contact with an aqueous solution containing diluted sulfuric acid by immersion or the like is performed (ST 6 ).
  • the diluted sulfuric acid treatment step copper oxide formed when metal copper is deposited on the substrate 1 can be removed by diluted sulfuric acid; hence, the metal copper is formed as a catalyst layer functioning as a catalyst, and the catalyst layer can be formed on the substrate 1 .
  • the diluted sulfuric acid treatment step may be omitted.
  • a plating treatment step in which the substrate 1 is immersed in a copper plating solution is performed (ST 7 ). Accordingly, as shown in FIG. 2( f ), a copper plating film 2 is formed on the substrate 1 using the metal copper, which forms the catalyst layer, as nuclei.
  • a known electroless plating method may be used, and as the copper plating solution, for example, there may be used a copper plating solution containing, besides copper ions and nickel ions, a complexing agent, such as sodium potassium tartrate tetrahydrate, a reducing agent, such as formaldehyde, a pH adjuster, such as sodium hydroxide, a chelating agent, and the like.
  • a complexing agent such as sodium potassium tartrate tetrahydrate
  • a reducing agent such as formaldehyde
  • a pH adjuster such as sodium hydroxide, a chelating agent, and the like.
  • the substrate 1 provided with the copper plating film 2 is sufficiently cleaned and then dried, and for example, in an inert gas atmosphere containing nitrogen gas or the like, or in an atmosphere, such as an evacuated atmosphere, substantially containing no oxygen and hydrogen, a heat treatment step of performing heating at a predetermined temperature for a predetermined heat treatment time is carried out (ST 8 ).
  • a heat treatment step of performing heating at a predetermined temperature for a predetermined heat treatment time is carried out (ST 8 ).
  • the copper plating film 2 having a high adhesion can be formed on the substrate 1 .
  • the metal copper can be made to function as a catalyst. Accordingly, without using palladium, the catalyst layer can be formed on the substrate 1 .
  • the metal copper deposited on the substrate 1 can be made to function as a catalyst.
  • the catalyst layer that enables electroless plating to be carried out can be formed, and as a result, by an inexpensive and simple process, the catalyst layer can be formed on the substrate 1 .
  • the process for forming a catalyst layer can be further simplified.
  • the catalyst layer can be satisfactorily adhered to the substrate. Accordingly, the adhesion between the copper plating film 2 and the substrate 1 can be improved.
  • the addition amount of copper to be used as the catalyst layer can be increased.
  • the method for forming a circuit using an electroless plating method of this embodiment, the case in which the circuit is formed from the copper plating film 2 will be described; however, the method for forming a circuit of the present invention is not limited thereto and may be applied to the case in which a circuit is formed using various plating films.
  • the substrate 1 similar to the substrate 1 used in the above catalytic treatment method and that of the above electroless plating method may be used.
  • a pretreatment step such as degreasing and/or cleaning
  • a pretreatment step such as degreasing and/or cleaning
  • treatment conditions of the solution and the like of the treatment steps the same treatment conditions as those in the above catalytic treatment method may be used.
  • the tin treatment step and the copper treatment step are repeated twice; however, the number of the steps to be repeated is not limited thereto, and the tin treatment step and the copper treatment step may be performed once or may be repeated three times or more.
  • the metal copper on the substrate 1 is irradiated with ultraviolet rays through a mask 3 having an arbitrary pattern, as shown in FIG. 4( f ), so that an oxidation treatment step in which exposed parts of the metal copper are oxidized is performed (ST 17 ).
  • the wavelength of ultraviolet rays to be irradiated when a low-pressure mercury lamp is used, the wavelength at which the water bonding is dissociated is 254 nm, and when the wavelength of ultraviolet rays is longer than 254 nm, metal copper cannot be sufficiently oxidized; hence, the wavelength is preferably 254 nm or less.
  • a diluted sulfuric acid treatment step in which the substrate 1 is brought into contact with a diluted sulfuric acid aqueous solution containing diluted sulfuric acid to remove copper oxide, which includes metal copper oxidized in the oxidation treatment step, is performed (ST 18 ). Accordingly, as shown in FIG. 4( g ), the metal copper deposited on the substrate 1 can be formed to have an arbitrary pattern.
  • the copper plating film 2 is formed using the metal copper formed into an arbitrary pattern as nuclei, as shown in FIG. 4( h ). Accordingly, a circuit of the copper plating film 2 having an arbitrary pattern can be formed.
  • a known electroless copper plating method may be used as in the case of the plating treatment step of the electroless plating method.
  • a heat treatment step of performing heating at a predetermined temperature for a predetermined heat treatment time is carried out (ST 20 ), so that the copper plating film 2 having a high adhesion can be formed on the substrate 1 .
  • the metal copper is deposited by reaction between tin and copper, and after the arbitrary parts of the metal copper are oxidized by irradiation of ultraviolet rays on the metal copper in the oxidation treatment step, copper oxide can be removed by diluted sulfuric acid. Accordingly, the catalyst layer can be formed on the substrate 1 without using palladium, and in addition, without using a resist, the copper plating film 2 having an arbitrary pattern can be formed.
  • the catalyst layer that enables electroless plating to be carried out can be formed, and as a result, by an inexpensive and simple process, the catalyst layer can be formed.
  • the copper plating film 2 having an arbitrary pattern can be formed without using a resist, a circuit pattern can be formed by a simple process.
  • a material forming the resist can be omitted, and hence the manufacturing cost of the circuit can be reduced.
  • the wavelength of ultraviolet rays irradiated in the oxidation treatment step is set to 254 nm or less, the metal copper can be sufficiently oxidized; hence, the oxidation efficiency can be improved, and in addition, a circuit having a dense and superior pattern can be formed.
  • the substrate 1 provided with a catalyst layer having an arbitrary pattern may be immersed in a palladium aqueous solution containing palladium so as to perform a palladium treatment step in which palladium is applied to the surface of the metal copper.
  • a palladium treatment step in which palladium is applied to the surface of the metal copper.
  • the present invention is not limited to the above embodiments and may be variously changed and modified whenever necessary.
  • a glass substrate of borosilicate glass having an outer diameter of 100 mm and a thickness of 0.7 mm was prepared, and as a pretreatment step, the above glass substrate was degreased and cleaned for 3 minutes using a sodium hydroxide aqueous solution having a sodium hydroxide concentration of 15% and a solution temperature of 50° C.
  • a hydrochloric acid-acidic stannous chloride aqueous solution having a stannous chloride concentration of 70 mmol/L and a solution temperature of 23° C. was prepared, and the above glass substrate was immersed in the above stannous chloride aqueous solution for 3 minutes.
  • a copper treatment step a copper sulfate aqueous solution having a copper sulfate concentration of 7.2 mmol/L and a solution temperature of 23° C. was prepared, and the above glass substrate was immersed in the above copper sulfate aqueous solution for 3 minutes, so that metal copper was deposited on the glass substrate.
  • a diluted sulfuric acid aqueous solution having a sulfuric acid concentration of 0.05 mol/L and a solution temperature of 23° C. was prepared, and the above glass substrate was immersed in the above diluted sulfuric acid aqueous solution for 1 minute, so that copper oxide formed when the metal copper was deposited was removed.
  • a plating treatment was performed on the above glass substrate.
  • a copper plating solution was prepared which contained 2.5 g/L (0.039 mol/L) copper ions and 0.138 g/L of nickel ions, and which also contained sodium potassium tartrate tetrahydrate (Rochelle salt) as a complexing agent, approximately 0.2% of formaldehyde as a reducing agent, and approximately 0.1% of a chelating agent.
  • approximately 1.5 g/L of sodium hydroxide (NaOH) as a pH adjuster was contained, and the pH was adjusted at 12.6.
  • the glass substrate was immersed in the copper plating solution at a controlled solution temperature of 30° C. for 1 hour, so that a copper plating film was formed on the substrate.
  • the rate of forming a copper plating was approximately 2,000 ⁇ /h, and by this process, without using palladium, a catalyst layer could be formed which enabled an electroless plating method to form a copper plating film.
  • a glass substrate of borosilicate glass having an outer diameter of 100 mm and a thickness of 0.7 mm was prepared, and as a pretreatment step, the above glass substrate was degreased and cleaned for 3 minutes using a sodium hydroxide aqueous solution having a sodium hydroxide concentration of 15% and a solution temperature of 50° C.
  • a hydrochloric acid-acidic stannous chloride aqueous solution having a stannous chloride concentration of 70 mmol/L and a solution temperature of 23° C. was prepared, and the above glass substrate was immersed in the above stannous chloride aqueous solution for 3 minutes.
  • a copper sulfate aqueous solution having a copper sulfate concentration of 7.2 mmol/L and a solution temperature of 23° C. was prepared, and the above glass substrate was immersed in the above copper sulfate aqueous solution for 3 minutes.
  • the glass substrate was immersed in a stannous chloride aqueous solution in a second tin treatment step under the same treatment conditions as those of the first tin treatment step
  • the glass substrate was immersed in a copper sulfate aqueous solution in a second copper treatment step under the same treatment conditions as those of the first copper treatment step, so that metal copper was deposited on the glass substrate.
  • a diluted sulfuric acid aqueous solution having a sulfuric acid concentration of 0.5 mol/L and a solution temperature of 23° C. was prepared, and the above glass substrate was immersed in the above diluted sulfuric acid aqueous solution for 1 minute, so that copper oxide was removed.
  • a plating treatment was performed on the above glass substrate.
  • a copper plating solution was prepared which contained 2.5 g/L (0.039 mol/L) copper ions and 0.138 g/L of nickel ions, and which also contained sodium potassium tartrate tetrahydrate (Rochelle salt) as a complexing agent, approximately 0.2% of formaldehyde as a reducing agent, and approximately 0.1% of a chelating agent.
  • approximately 1.5 g/L of sodium hydroxide (NaOH) as a pH adjuster was contained, and the pH was adjusted at approximately 12.6.
  • the glass substrate was immersed in the copper plating solution at a controlled solution temperature of 30° C. for 1 hour, so that a copper plating film was formed on the substrate.
  • the rate of forming a copper plating was approximately 9,000 ⁇ /h, and the copper plating film could be formed at a fast rate as compared to that of the Example 1.
  • the resistivity of the copper plating film was approximately 3 to 3.5 ⁇ cm, and a superior copper plating film having high frequency properties could be formed.
  • a glass substrate of borosilicate glass having an outer diameter of 100 mm and a thickness of 0.7 mm was prepared, and as a pretreatment step, the above glass substrate was degreased and cleaned for 3 minutes using a sodium hydroxide aqueous solution having a sodium hydroxide concentration of 15% and a solution temperature of 50° C.
  • a hydrochloric acid-acidic stannous chloride aqueous solution having a stannous chloride concentration of 70 mmol/L and a solution temperature of 23° C. was prepared, and the above glass substrate was immersed in the above stannous chloride aqueous solution for 3 minutes.
  • a copper sulfate aqueous solution having a copper sulfate concentration of 7.2 mmol/L and a solution temperature of 23° C. was prepared, and the above glass substrate was immersed in the above copper sulfate aqueous solution for 3 minutes.
  • a second tin treatment step after the glass substrate was immersed in a stannous chloride aqueous solution under the same treatment conditions as those of the first tin treatment step, in a second copper treatment step, the glass substrate was immersed in a copper sulfate aqueous solution under the same treatment conditions as those of the first copper treatment step, so that metal copper was deposited on the substrate.
  • the glass substrate was rotated at a rotation rate of 3,000 rpm for 1 minute, so that drying was performed.
  • the glass substrate was irradiated by ultraviolet rays having a wavelength of 254 nm and a light quantity of 150 mJ/cm2 through a mask having an arbitrary pattern, so that exposed parts of the metal copper were oxidized.
  • a diluted sulfuric acid aqueous solution having a sulfuric acid concentration of 0.5 mol/L and a solution temperature of 23° C. was prepared, and the above glass substrate was immersed in the above diluted sulfuric acid aqueous solution for 1 minute, so that copper oxide was removed.
  • a plating treatment was performed on the above glass substrate.
  • a copper plating solution was prepared which contained 2.5 g/L (0.039 mol/L) copper ions and 0.138 g/L of nickel ions, and which also contained sodium potassium tartrate tetrahydrate (Rochelle salt) as a complexing agent, approximately 0.2% of formaldehyde as a reducing agent, and approximately 0.1% of a chelating agent.
  • approximately 1.5 g/L of sodium hydroxide (NaOH) as a pH adjuster was contained, and the pH was adjusted at approximately 12.6.
  • the glass substrate was immersed in the copper plating solution at a controlled solution temperature of 30° C. for 1 hour, so that a copper plating film was formed on the substrate.
  • the rate of forming a copper plating was approximately 9,000 ⁇ /h, and the copper plating film could be formed at a fast rate as compared to that of the Example 1.
  • the resistivity of the copper plating film was approximately 3 to 3.5 ⁇ cm, and a circuit of a superior copper plating film having high frequency properties could be formed.
  • the tensile strength of the copper plating film with respect to the glass substrate was 40 Mpa or more, and hence the adhesion of the copper plating film could be improved.
  • a circuit having a fine wiring L/S (Line&Space) of 10 ⁇ m could be formed.
  • a glass substrate of borosilicate glass having an outer diameter of 100 mm and a thickness of 0.7 mm was prepared, and as a pretreatment step, the above glass substrate was degreased and cleaned for 3 minutes using a sodium hydroxide aqueous solution having a sodium hydroxide concentration of 15% and a solution temperature of 50° C.
  • a hydrochloric acid-acidic stannous chloride aqueous solution having a stannous chloride concentration of 70 mmol/L and a solution temperature of 23° C. was prepared, and the above glass substrate was immersed in the above stannous chloride aqueous solution for 3 minutes.
  • a copper sulfate aqueous solution having a copper sulfate concentration of 7.2 mmol/L and a solution temperature of 23° C. was prepared, and the above glass substrate was immersed in the above copper sulfate aqueous solution for 3 minutes.
  • a second tin treatment step after the glass substrate was immersed in a stannous chloride aqueous solution under the same treatment conditions as those of the first tin treatment step, in a second copper treatment step, the glass substrate was immersed in a copper sulfate aqueous solution under the same treatment conditions as those of the first copper treatment step, so that metal copper was deposited on the glass substrate.
  • the glass substrate was rotated at a rotation rate of 3,000 rpm for 1 minute, so that drying was performed.
  • the glass substrate was irradiated by ultraviolet rays having a wavelength of 254 nm and a light quantity of 150 mJ/cm2 with a mask having an arbitrary pattern, so that exposed parts of the metal copper were oxidized.
  • a diluted sulfuric acid aqueous solution having a sulfuric acid concentration of 0.5 mol/L and a solution temperature of 23° C. was prepared, and the above glass substrate was immersed in the above diluted sulfuric acid aqueous solution for 1 minute, so that copper oxide was removed.
  • a palladium aqueous solution having a palladium concentration of 3 ⁇ 10 ⁇ 3 mol/L and a solution temperature of 30° C. was prepared, and the glass substrate provided with a catalyst layer having an arbitrary pattern was immersed in the above palladium aqueous solution for 3 minutes.
  • a plating treatment was performed on the above glass substrate.
  • a copper plating solution was prepared which contained 2.5 g/L (0.039 mol/L) copper ions and 0.138 g/L of nickel ions, and which also contained sodium potassium tartrate tetrahydrate (Rochelle salt) as a complexing agent, approximately 0.2% of formaldehyde as a reducing agent, and approximately 0.1% of a chelating agent.
  • approximately 1.5 g/L of sodium hydroxide (NaOH) as a pH adjuster was contained, and the pH was adjusted at approximately 12.6.
  • the glass substrate was immersed in the copper plating solution at a controlled solution temperature of 30° C. for 1 hour, so that a copper plating film was formed on the substrate.
  • the rate of forming a copper plating was approximately 12,000 ⁇ /h, and the copper plating film could be formed at a fast rate as compared to that of the Examples 1 to 3.
  • the resistivity of the copper plating film was approximately 3 to 3.5 ⁇ cm, and a circuit of a superior copper plating film having high frequency properties could be formed.
  • the tensile strength of the copper plating film with respect to the glass substrate was 40 Mpa or more, and hence the adhesion of the copper plating film could be improved.
  • a circuit having a fine wiring L/S (Line&Space) of 10 ⁇ m could be formed.

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US12/060,159 2005-10-04 2008-03-31 Catalytic treatment method, electroless plating method, and method for forming circuit using electroless plating Abandoned US20080199627A1 (en)

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JP2005291212A JP4521345B2 (ja) 2005-10-04 2005-10-04 触媒処理方法、無電解めっき方法および無電解めっき方法を用いた回路形成方法
PCT/JP2006/319691 WO2007043380A1 (ja) 2005-10-04 2006-10-02 触媒処理方法、無電解めっき方法および無電解めっき方法を用いた回路形成方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11066753B2 (en) * 2015-06-16 2021-07-20 3M Innovative Properties Company Plated polymeric article including tin/copper tie/seed layer

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CN105965010A (zh) * 2016-05-23 2016-09-28 济南大学 一种镀银铜粉的制备方法

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US3615951A (en) * 1969-06-20 1971-10-26 Ibm Method for etching copper
US4150171A (en) * 1976-03-30 1979-04-17 Surface Technology, Inc. Electroless plating
US5358907A (en) * 1990-01-30 1994-10-25 Xerox Corporation Method of electrolessly depositing metals on a silicon substrate by immersing the substrate in hydrofluoric acid containing a buffered metal salt solution
US20040137161A1 (en) * 2001-04-06 2004-07-15 Yuji Segawa Device and method for electroless plating

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JPH0665749A (ja) * 1991-09-17 1994-03-08 Hitachi Chem Co Ltd 無電解ニッケルリンめっき液
JPH06256961A (ja) * 1993-03-05 1994-09-13 Mitsui Mining & Smelting Co Ltd 無電解めっき用触媒、その製造方法及び無電解めっき法
JP3337802B2 (ja) * 1993-12-28 2002-10-28 日本リーロナール株式会社 酸化銅（ｉ）コロイドの金属化によるダイレクトプレーティング方法
JP2002047574A (ja) * 2000-07-27 2002-02-15 Ishikawa Kinzoku Kogyo Kk 高性能無電解めっき法
JP2002309376A (ja) * 2001-04-10 2002-10-23 Okuno Chem Ind Co Ltd 無電解銅めっき用触媒付与方法
JP2005171318A (ja) * 2003-12-11 2005-06-30 Hitachi Chem Co Ltd プリント配線板とプリント配線板の製造方法

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US3615951A (en) * 1969-06-20 1971-10-26 Ibm Method for etching copper
US4150171A (en) * 1976-03-30 1979-04-17 Surface Technology, Inc. Electroless plating
US5358907A (en) * 1990-01-30 1994-10-25 Xerox Corporation Method of electrolessly depositing metals on a silicon substrate by immersing the substrate in hydrofluoric acid containing a buffered metal salt solution
US20040137161A1 (en) * 2001-04-06 2004-07-15 Yuji Segawa Device and method for electroless plating

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11066753B2 (en) * 2015-06-16 2021-07-20 3M Innovative Properties Company Plated polymeric article including tin/copper tie/seed layer

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TW200722552A (en) 2007-06-16
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CN101283116A (zh) 2008-10-08
JP2007100164A (ja) 2007-04-19
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