US20080032106A1 - Transparent Conductive Film, Sintered Body Target for Transparent Conductive Film Fabrication, and Transparent Conductive Base Material and Display Device Using the Same - Google Patents

Transparent Conductive Film, Sintered Body Target for Transparent Conductive Film Fabrication, and Transparent Conductive Base Material and Display Device Using the Same Download PDF

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US20080032106A1
US20080032106A1 US11/579,978 US57997805A US2008032106A1 US 20080032106 A1 US20080032106 A1 US 20080032106A1 US 57997805 A US57997805 A US 57997805A US 2008032106 A1 US2008032106 A1 US 2008032106A1
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transparent conductive
film
conductive film
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Tokuyuki Nakayama
Yoshiyuki Abe
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Sumitomo Metal Mining Co Ltd
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Sumitomo Metal Mining Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6567—Treatment time
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    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611—Oxide-containing component
    • Y10T428/12618—Plural oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified
    • Y10T428/24975—No layer or component greater than 5 mils thick
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/24992—Density or compression of components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/269—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension including synthetic resin or polymer layer or component

Definitions

  • This invention relates to a transparent conductive film used in a display device, such as an organic or inorganic EL element, an electronic paper, or a touch panel; a sintered body target for transparent conductive film fabrication; and a transparent conductive base material and a display device using this transparent conductive base material.
  • tin oxide (SnO 2 ) base which is mainly utilized by doping F or antimony (Sb)
  • ITO tin-doped indium oxide
  • the ITO crystal film is used for the organic EL element, the local concentration of electric current is produced because a projection structure due to crystal growth is present, and uniform display becomes difficult.
  • the transmittance of light in a short-wavelength region (the visible region of short wavelengths) of about 380-400 nm is particularly low, and thus there is another problem that the efficiency for taking out the light of a particular wavelength from a light-emitting layer is impaired. From these problems, it is demanded that an amorphous transparent conductive film whose surface is extremely flat or a transparent conductive film having a high transmittance of light in the visible region, notably in the visible region of short wavelengths, should be used for the organic EL element.
  • a transparent conductive film that is hard to break with respect to bending is essential for the electronic paper characterized by flexibility.
  • an oxide crystal film has a grain boundary that is slight in structure and is liable to break.
  • an amorphous film which is free of the grain boundary is hard to break with respect to bending. From this, it is proposed to use the amorphous transparent conductive film as the transparent conductive film that is resistant to bending. It is needless to say that the high transmittance in the visible region of short wavelengths is important for the amorphous transparent conductive film, like the organic EL element, in order to improve the taking-out efficiency of light.
  • Patent Reference 1 described below proposes the organic electroluminescence element comprising an organic layer that contains an organic light-emitting layer, sandwiched between an anode and a cathode so that the cathode includes, in order from a side coming in contact with the organic layer, an electron injection electrode layer, a transparent conductive film, and a metallic thin film with a resistivity of 1 ⁇ 10 ⁇ 5 ⁇ cm or less, laminated one over another and a transparent thin film layer is formed outside the cathode.
  • an amorphous transparent conductive film using an oxide composed of indium (In), zinc (Zn), and oxygen (O) is applied.
  • Patent Reference 2 described below sets forth a transparent conductive film in which a compound metallic oxide film containing In, Sn, and Zn, as the transparent conductive film having the properties of the high transmittance of visible light and low resistance, forms at least one kind of In 4 Sn 3 O 12 crystal, or microcrystals or amorphism composed of In, Sn, and Zn, and as the composition of metal contained therein, an Sn content indicated by Sn ⁇ 100/(In+Sn) is 40-60 at. % and a Zn content indicated by Zn ⁇ 100/(In +Zn) is 10-90 at. %.
  • Patent Reference 3 described below proposes a transparent conductive film in which, in a quasi-two-dimensional system indicated by an oxide containing magnesium (Mg) and indium (In), MgO—In 2 O 3 , as the transparent conductive film having a band gap of 3.4 eV and a refractive index of light of 2.0 that are almost the same as in a conventional transparent conductive film and possessing much higher conductivity than MgIn 2 O 4 and In 2 O 3 , namely lower resistivity and excellent optical properties, an In content indicated by In/(Mg+In) is 70-95 at. %.
  • Patent Reference 4 described below proposes a transparent conductive film in which, in a quasi-two-dimensional system indicated by Ga 2 O 3 —In 2 O 3 as the transparent conductive film having a composition range considerably different from GaInO 3 which has been known in the past and possessing much higher conductivity than GaInO 3 and In 2 O 3 , namely lower resistivity and excellent optical properties, a Ga content indicated by Ga/(Ga+In) is 15-49 at. %.
  • Patent Reference 5 states that, in a gallium-indium oxide (GaInO 3 ) film in which a heterovalent dopant like a quadrivalent atom is doped by a small amount, transparency is promoted, index matching is improved, and the electrical conductivity of nearly the same level as in a wide-band-gap semiconductor used at present can be attained.
  • This film is capable of bringing about the high transmittance in the visible region of short wavelengths, but has still the drawbacks that, as in the crystal film mentioned above, the projection structure is produced on the surface of the film and the film is liable to break with respect to bending.
  • a substrate temperature as high as about 350° C. is required and thus is disadvantageous to a fabrication process.
  • An object of the present invention is to provide a transparent conductive film which is amorphous, has a high transmittance of light in the visible region of short wavelengths, and is hard to break with respect to bending.
  • the transparent conductive film according to the present invention is formed as an amorphous oxide film composed of Ga, In, and O, in which a Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, a resistivity ranges from 1.2 ⁇ 10 ⁇ 3 ⁇ cm to 8.0 ⁇ 10 ⁇ 3 ⁇ cm, a film thickness is 500 nm or less, and the transmittance of light at a wavelength of 380 nm is 45% or more.
  • the film thickness is 200 nm or less and the transmittance of light at a wavelength of 380 nm is 60% or more.
  • the film thickness is 100 nm or less and the transmittance of light at a wavelength of 380 nm is 65% or more.
  • an arithmetic mean height Ra is preferably 2.0 nm or less.
  • the sintered body target for transparent conductive film fabrication according to the present invention is composed of Ga, In, and O; ranges in Ga content from 35 at. % to 45 at. % with respect to all metallic atoms; is chiefly constructed from a GaInO 3 phase of a ⁇ -Ga 2 O 3 -type structure and an In 2 O 3 phase of a bixbyite-type structure; shows an X-ray diffraction peak intensity ratio defined by the following formula, ranging from 50% to 110%; and has a density of 5.8 g/cm 3 or more: In 2 O 3 phase (400)/ ⁇ -GaInO 3 phase (111) ⁇ 100[%]
  • the resistivity is preferably 4.0 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • the transparent conductive film is formed on one or each surface of a transparent substrate of one selected from among materials, such as a glass plate, a quartz plate, a resin plate, and a resin film, by using the sintered body target for transparent conductive film fabrication.
  • a gas barrier film of at least one selected from among compounds, such as silicon nitride, silicon oxide-nitride, and silicon oxide, and the transparent conductive film obtained by using the sintered body target for transparent conductive film fabrication are successively formed on one or each surface of a transparent substrate of one selected from the resin plate and the resin film.
  • the transparent conductive base material is used.
  • the transparent conductive film according to the present invention is formed as an amorphous oxide film composed of Ga, In, and O, in which the Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, the resistivity ranges 1.2 ⁇ 10 ⁇ 3 ⁇ cm to 8.0 ⁇ 10 ⁇ 3 ⁇ cm, the film thickness is 500 nm or less, and the transmittance of light at a wavelength of 380 nm is 50% or more.
  • the transparent conductive film has a low resistivity and a high transmittance of light in the visible region of short wavelengths which formerly have never been obtained, and combines dominant features that breakage is hard to occur which is inherent in the amorphous film, the arithmetic mean height is low, and a film surface is smooth.
  • the transparent conductive film and the display device using such transparent conductive films are useful as versatile display devices.
  • FIG. 1 is a table showing together the target evaluation and thin film evaluation of Embodiments 1-11 and Comparative examples 1-11 in the present invention.
  • FIG. 2 is a diagram showing an X-ray diffraction pattern of a sintered body obtained at a sintering temperature of 1400° C.
  • FIG. 3 is an X-ray diffraction diagram of a thin film formed by using a target sintered at 1400° C.
  • FIG. 4 is a table showing together the film forming surface, Ga content, silicon oxide-nitride film thickness, resistivity, and transmittance of light of Embodiments 12-15 in the present invention.
  • the transparent conductive film which is the amorphous oxide film composed of Ga, In, and O and is hard to break with respect to bending and in which the Ga content ranges from 35 at. % to 45 at.
  • the resistivity ranges 1.2 ⁇ 10 ⁇ 3 ⁇ cm to 8.0 ⁇ 10 ⁇ 3 ⁇ cm
  • the film thickness is 500 nm or less
  • the transmittance of light at a wavelength of 380 nm is 45% or more. In this way, the present invention has been completed.
  • a first aspect of the present invention provides the transparent conductive film which is the amorphous oxide film composed of Ga, In, and in which the Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, the resistivity ranges 1.2 ⁇ 10 ⁇ 3 ⁇ cm to 8.0 ⁇ 10 ⁇ 3 ⁇ cm, the film thickness is 500 nm or less, and the transmittance of light at a wavelength of 380 nm is 45% or more.
  • a second aspect of the present invention provides the transparent conductive film according to the first aspect of the present invention in which the film thickness is 200 nm or less and the transmittance of light at a wavelength of 380 nm is 60% or more.
  • a third aspect of the present invention provides the transparent conductive film according to the first aspect of the present invention in which the film thickness is 100 nm or less and the transmittance of light at a wavelength of 380 nm is 65% or more.
  • a fourth aspect of the present invention provides the transparent conductive film according to any one of the first to third aspects of the present invention in which the arithmetic mean height Ra is 2.0 nm or less.
  • a fifth aspect of the present invention provides the sintered body target for transparent conductive film fabrication which is composed of Ga, In, and O; ranges in Ga content from 35 at. % to 45 at. % with respect to all metallic atoms; is chiefly constructed from a GaInO 3 phase of a ⁇ -Ga 2 O 3 -type structure and an In 2 O 3 phase of a bixbyite-type structure; shows an X-ray diffraction peak intensity ratio defined by the following formula, ranging from 50% to 110%; and has a density of 5.8 g/cm 3 or more: In 2 O 3 phase (400)/ ⁇ -GaInO 3 phase (111) ⁇ 100[%]
  • a sixth aspect of the present invention provides the sintered body target for transparent conductive film fabrication according to the fifth aspect of the present invention in which the resistivity is 4.0 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • a seventh aspect of the present invention provides the transparent conductive base material which comprises the transparent conductive film according to any one of the first to fourth aspects of the present invention, formed on one or each surface of a transparent substrate of one selected from among materials, such as a glass plate, a quartz plate, a resin plate, and a resin film, by using the sintered body target for transparent conductive film fabrication according to the fifth or sixth aspect of the present invention.
  • An eighth aspect of the present invention provides the transparent conductive base material which comprises a gas barrier film of at least one selected from among compounds, such as silicon nitride, silicon oxide-nitride, and silicon oxide, and the transparent conductive film according to any one of the first to fourth aspects of the present invention obtained by using the sintered body target for transparent conductive film fabrication according to the fifth or sixth aspect of the present invention, successively formed on one or each surface of a transparent substrate of one selected from the resin plate and the resin film.
  • a gas barrier film of at least one selected from among compounds, such as silicon nitride, silicon oxide-nitride, and silicon oxide and the transparent conductive film according to any one of the first to fourth aspects of the present invention obtained by using the sintered body target for transparent conductive film fabrication according to the fifth or sixth aspect of the present invention, successively formed on one or each surface of a transparent substrate of one selected from the resin plate and the resin film.
  • a ninth aspect of the present invention provides the display device using the transparent conductive base material according to the seventh or eighth aspect of the pre-sent invention.
  • the transparent conductive film of the present invention is the amorphous oxide film composed of Ga, In, and O, in which a Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, a resistivity ranges from 1.2 ⁇ 10 ⁇ 3 ⁇ cm to 8.0 ⁇ 10 ⁇ 3 ⁇ cm, a film thickness is 500 nm or less, and the transmittance of light at a wavelength of 380 nm is 45% or more.
  • the transparent conductive film of the present invention is the amorphous oxide film composed of Ga, In, and O. If the Ga content is below 35 at. %, the transmittance of light in the visible region of short wavelengths will be impaired. Beyond 45 at. %, the conductivity will be lowered.
  • the resistivity of the transparent conductive film is less than 1.2 ⁇ 10 ⁇ 3 ⁇ cm, but for this, the composition of the transparent conductive film needs a Ga content below 35%. In this case, the problem arises that the transmittance of light at a wavelength of 380 nm is impaired. If the resistivity is beyond 8.0 ⁇ 10 ⁇ 3 ⁇ cm, the range of application of the transparent conductive film will be narrowed to cause a problem.
  • the film thickness is 500 nm or less and the transmittance of light at a wavelength of 380 nm is less than 45%, the taking-out efficiency of light, as in a conventional transparent conductive film, will be impaired, and thus it is necessary that the transmittance of light at a wavelength of 380 nm is 45% or more.
  • the film thickness is 200 nm or less and the transmittance of light at a wavelength of 380 nm is 60% or more. It is further desirable that in the above transparent conductive film, the film thickness is 100 nm or less and the transmittance of light at a wavelength of 380 nm is 65% or more.
  • the arithmetic mean height Ra is 2.0 nm or less.
  • the arithmetic mean height Ra is based on the definition of JIS B0601-2001.
  • the arithmetic mean height Ra more than 2.0 mm is unfavorable for applications in which the flatness of the film surface is required as in the organic EL element.
  • a sputtering process As techniques of depositing the transparent conductive film of the present invention, a sputtering process, a solution coating method, and a CVD technique are cited as examples. In view of productivity, a magnetron sputtering process using DC plasma (a DC-magnetron sputtering process) is favorable.
  • DC plasma a DC-magnetron sputtering process
  • the sputtering process is used to fabricate the transparent conductive film of the present invention, it is important to use the target of the present invention in order to obtain the amorphous transparent conductive film of the present invention that has a high transmittance of light in the visible region of short wavelengths.
  • the target of the present invention is a sintered body target for thin film fabrication which is composed of Ga, In, and O; ranges in Ga content from 35 at. % to 45 at. % with respect to all metallic atoms; is chiefly constructed from a ⁇ -GaInO 3 phase and an In 2 O 3 phase; shows an X-ray diffraction peak intensity ratio defined by the following formula, ranging from 50% to 110%; and has a density of 5.8 g/cm 3 or more: In 2 O 3 phase (400)/ ⁇ -GaInO 3 phase (111) ⁇ 100[%]
  • the In 2 O 3 phase may be such that oxygen vacancy is introduced and may also be such that Ga is replaced with part of In.
  • the ⁇ -GaInO 3 phase may be such that a Ga/In ratio of the number of atoms deviates somewhat from a stoichiometric composition and may also be such that oxygen vacancy is introduced.
  • the sintered body target for thin film fabrication of the present invention is the sintered body composed of Ga, In, and O and it is desirable to have the Ga content ranging from 35 at. % to 45 at. % with respect to all metallic atoms. If the Ga content is below 35 at. %, the transmittance of light of a deposited amorphous film in the visible region of short wavelengths will be lowered. On the other hand, beyond 45 at. %, the resistivity of the amorphous film will be increased.
  • a peak intensity ratio between ⁇ -GaInO 3 phase (111) reflection and In 2 O 3 phase (400) reflection in the X-ray diffraction ranges from 50% to 110%. If the peak intensity ratio is below 50%, the resistivity of the deposited amorphous film will be increased. On the other hand, beyond 110%, the transmittance of light of the amorphous film in the visible region of short wavelengths will be lowered.
  • the main peaks of the ⁇ -GaInO 3 phase and the In 2 O 3 phase in the X-ray diffraction are governed by (111) reflection and (222) reflection, respectively, but In 2 O 3 phase (222) reflection is superimposed with ⁇ -GaInO 3 phase (002) reflection, and thus the In 2 O 3 phase is evaluated by (400) reflection that has the second highest intensity.
  • the resistivity of the sintered body target for transparent conductive film fabrication is 4.0 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • the sintered body target for thin film fabrication such as that mentioned above has been obtained.
  • the raw material powder has a purity of 3N or more and an average grain diameter is adjusted to 3 ⁇ m or less by grinding.
  • compound powder, an organic binder, and a disperser are mixed until a uniform state is reached.
  • the sintering temperature ranges from 1250° C. to 1400° C.
  • the sintering time is at least 12 hours, and it is more desirable that sintering is performed in a current stream of oxygen. Also, the above conditions are favorable for the case of the atmospheric-pressure sintering method, but they do not apply to the case where a pressure sintering method, such as a hot pressing method, is used.
  • Embodiment 1 of Patent Reference 3 discloses that a target sintered at 1000° C. is used to form a thin film.
  • the target is sintered at such a low temperature, however, it is impossible to obtain the target capable of forming the amorphous film of the present invention that exhibits the relatively low resistivity and the high transmittance of light in the visible region of short wavelengths.
  • a (Ga, In) 2 O 3 phase different from the GaInO 3 phase and a Ga 2 O 3 phase that is an unavoidable production phase are sometimes produced, depending on the average grain diameter after grinding of the raw material powder and the sintering condition.
  • the sintered body of a (Ga, In) 2 O 3 single phase shows the resistivity as high as about 5-10 ⁇ cm, and thus when the (Ga, In) 2 O 3 phase exceeding 80% in the above formula is contained in the sintered body target for thin film fabrication, a film deposition rate is reduced in the case where the sintered body target is used to perform sputtering and productivity is impaired. It is thus desirable that the content of the (Ga, In) 2 O 3 phase is 80% or less in the formula. Also, unavoidable impurities, such as a Ga 2 O 3 unreactant, may be contained if they are such that the peak in the X-ray diffraction is not observed.
  • the density of the sintered body is 5.8 g/cm 3 or more.
  • the frequency of occurrence of abnormal electric discharge in sputtering is increased, and as a result, the amorphous transparent conductive film of good quality cannot be obtained.
  • the resistivity is 4.0 ⁇ 10 ⁇ 2 ⁇ cm or less. If the resistivity is beyond 4.0 ⁇ 10 ⁇ 2 ⁇ cm, the film deposition rate will be reduced even when DC magnetron sputtering is possible, and therefore, productivity is impaired.
  • the transparent substrate of one selected from among materials, such as a glass plate, a quartz plate, a resin plate, and a resin film, can be used as the substrate, but the substrate for the display device is not limited to this.
  • the transparent conductive film of the present invention is a new transparent conductive film which is extremely flat in film surface and amorphous, has the high transmittance of light in the visible region of short wavelengths, particularly at about 380-400 nm, and is hard to break with respect to bending. Hence, it is peculiarly suitable for the resin plate and the resin film.
  • the transparent conductive base material comprises the transparent conductive film of the present invention formed on one or each surface of a transparent substrate of one selected from among materials, such as a glass plate, a quartz plate, a resin plate, and a resin film, by using the sintered body target for thin film fabrication of the present invention.
  • the display device needs a gas barrier property
  • at least one layer of the gas barrier film containing at least one selected from among compounds, such as silicon nitride, silicon oxide-nitride, and silicon oxide is formed on one or each surface of a transparent substrate of one selected from the resin plate and the resin film, between the transparent substrate and the transparent conductive film.
  • the gas barrier film may contain not only an inorganic film, but also an organic film.
  • the transparent conductive film of the present invention has the advantage of exhibiting the high transmitting of light in the visible region, notably in the visible region of short wavelengths, and thus if this advantage can be utilized, some application other than that to the transparent electrode is possible.
  • the transparent conductive base material of the present invention can be used to construct the display device.
  • the transparent conductive film of the present invention is an amorphous oxide film composed of Ga, In, and O, in which a Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, the resistivity ranges 1.2 ⁇ 10 ⁇ 3 ⁇ cm to 8.0 ⁇ 10 ⁇ 3 ⁇ cm, the film thickness is 500 nm or less, and the transmittance of light at a wavelength of 380 nm is 50% or more.
  • the transparent conductive film has a low resistivity and a high transmittance of light in the visible region of short wavelengths which formerly have never been obtained, and combines dominant features that breakage is hard to occur which is inherent in the amorphous film, the arithmetic mean height Ra is low, and a film surface is smooth. From this, the transparent conductive base material using the transparent conductive film can be used for versatile display devices, such as an organic or inorganic El element, an electronic paper, and a touch panel.
  • the transparent conductive film of the present invention which is extremely flat in film surface and amorphous, has the high transmittance of light in the visible region of short wavelengths, particularly at about 380-400 nm, and is hard to break with respect to bending.
  • the resistivity of each of fabricated films is measured by a 4-pin prove technology, using LORESTA-IP, MCP-T250 by Mitsubishi Chemical Corporation.
  • the transmittance of light at a wavelength of 380 nm is measured by using a spectrophotometer (U-4000 by Hitachi, Ltd.).
  • the arithmetic mean height Ra is measured by an atomic force microscope (Nanoscope III by Digital Instruments Co., Ltd.).
  • the crystal structure of each fabricated film is identified from the X-ray diffraction (using a CuK ⁇ line, by Rigaku Denki Kogyo Co., Ltd.).
  • the sintered body target and the film composition are studied by an ICP optical emission spectral analysis technique (using SPS4000 by Seiko Instruments Inc.).
  • the density of the sintered body is measured by the Archimedes technique (using a high precision automatic densimeter by Toyo Seiki Seisaku-sho, Ltd.).
  • Ga 2 O 3 powder and In 2 O 3 powder are ground by a ball mill and are adjusted so that an average grain diameter is 3 ⁇ m or less. After that, the powder is blended so that the Ga content expressed by Ga/(Ga+In) is 40 at. % and is mixed with an organic binder, a dispersant, and a plasticizer by the ball mill for 48 hours to prepare a slurry. The slurry thus obtained is sprayed and dried by a spray dryer into granulation powder.
  • the granulation powder obtained is admitted to a rubber mold and a molded body with a diameter of 191 mm and a thickness of nearly 6 mm is fabricated by a hydrostatic press. Molded bodies likewise obtained are sintered under atmospheric pressure for 20 hours at 1250° C., 1350° C., and 1400° C., respectively, in a current stream of oxygen. Machining and grinding operations are performed with respect to the periphery and surface of each of sintered bodies, which is shaped to have a diameter of about 6 inch and a thickness of about 5 mm.
  • FIG. 1 shows the Ga content, the density, the resistivity, and the In 2 O 3 phase (400)/ ⁇ -GaInO 3 phase (111) peak intensity ratio obtained by the X-ray diffraction.
  • FIG. 2 shows the X-ray diffraction pattern of a sintered body obtained at a sintering temperature of 1400° C. For the peak of the ⁇ -GaInO 3 phase, only the face index is shown.
  • each sintered body is bonded to a cooled copper plate and is used as the sintered body target for thin film fabrication.
  • a sputtering device SPF-530H by ANELVA Corporation is used.
  • the substrate uses 7059 substrate by Corning Inc. and is placed parallel with a target surface. A distance between the substrate and the target is set to 60 mm.
  • a sputtering gas uses a gas mixture including Ar and O 2 so that the proportion of oxygen is set to 1.5% and the total gas pressure to 0.5 Pa.
  • the making DC power is set to 200 W.
  • room temperature deposition is carried out by DC magnetron sputtering.
  • the electric discharge is stable and abnormality, such as occurrence of an arc discharge, is not recognized.
  • the deposition time is controlled and the transparent conductive film with a thickness of 200 nm is obtained.
  • FIG. 3 shows an X-ray diffraction diagram of a thin film deposited by using a target sintered at 1400° C. As seen from this figure, there is no definite peak, and it is confirmed that the film is amorphous. A film deposited with a target at a different sintering temperature is also amorphous.
  • the deposition time is controlled so that film thicknesses are 100 nm and 500 nm, and deposition is carried out in the same way as Embodiment 3.
  • the measured results of the transmittance of light at a wavelength of 380 nm, the resistivity, and the arithmetic mean height Ra of each film are shown in FIG. 1 .
  • the ICP analysis it is confirmed that the film composition and the target composition are nearly equivalent.
  • the Ga content expressed by Ga/(Ga+In) is changed to 35 and 45 at. % and targets are fabricated on the same conditions as Embodiment 3.
  • the time is controlled so that film thicknesses are 100, 200, and 500 nm, and deposition is performed in the same way as Embodiment 3.
  • the measured results of the transmittance of light at a wavelength of 380 nm, the resistivity, and the arithmetic mean height Ra of each film are shown in FIG. 1 .
  • the ICP analysis it is confirmed that the film composition and the target composition are nearly equivalent.
  • a substrate comprising silicon oxide-nitride formed on one surface only or each surface of a PET film with a thickness of 50 ⁇ m is provided.
  • the room temperature deposition is performed on the silicon oxide-nitride substrate on the same deposition conditions as Embodiment 3 to fabricate the transparent conductive base material.
  • FIG. 4 the measured results of the transmittance of light at a wavelength of 380 nm, the resistivity, and the arithmetic mean height Ra of each base material are shown.
  • a PET film with a thickness of 188 ⁇ m has a hard coat layer on its one surface, and the room temperature deposition is carried out under the same conditions as Embodiment 3 on a surface opposite to the hard coat layer so that a surface resistivity is 400 ⁇ / ⁇ . In this way, the transparent conductive base material is fabricated.
  • a GaInO film is deposited on a transparent glass substrate at room temperature so that the surface resistivity is 400 ⁇ / ⁇ . In this way, the transparent conductive base material is fabricated.
  • the Ga content expressed by Ga/(Ga+In) is changed to 30 and 50 at. % and sintered body targets are fabricated on the same conditions as Embodiment 3.
  • the Ga content, the density, the resistivity, and the In 2 O 3 phase (400)/ ⁇ -GaInO 3 phase (111) peak intensity ratio obtained by the X-ray diffraction are shown in FIG. 1 .
  • the room temperature deposition is performed on the same deposition conditions as Embodiment 3. In this case, the deposition time is controlled so that film thicknesses are 100 nm, 200 nm, and 500 nm.
  • the transmittance of light at a wavelength of 380 nm, the resistivity, the arithmetic mean height Ra, and the crystal structure identified from the X-ray diffraction are further shown in FIG. 1 .
  • the sintered body targets that are the same as in Embodiment 3 are fabricated by changing the sintering temperatures to 1100° C. and 1200° C.
  • the density and the resistivity of each sintered body are shown in FIG. 1 .
  • the ⁇ -GaInO 3 phase is little produced at a sintering temperature of 1100° C. and only the (Ga, In) 2 O 3 phase and the In 2 O 3 phase are produced. Therefore, the In 2 O 3 phase (400)/ ⁇ -GaInO 3 phase (111) peak intensity ratio cannot be found.
  • the In 2 O 3 phase (400) peak intensity is higher than in Embodiments 1-3 and a large number of In 2 O 3 phases are produced. Only the In 2 O 3 phase (400)/ ⁇ -GaInO 3 phase (111) peak intensity ratio at 1200° C. is further shown in FIG. 1 .
  • the time is controlled so that film thicknesses are 200 nm and 500 nm, and the room temperature deposition is performed.
  • the arc discharge is often generated during deposition.
  • the arc discharge although not so often as the case of 1100° C., is considerably generated.
  • targets sintered at 1100° C. and 1200° C. their densities are below 5.8 g/cm 3 and thus arcing is often generated during sputter deposition. This causes the problems that the film is damaged and the fluctuation of the deposition rate is heavy.
  • any film obtained is amorphous.
  • the transmittance of light at a wavelength of 380 nm, the resistivity, the arithmetic mean height Ra, and the crystal structure identified from the X-ray diffraction are shown in FIG. 1 .
  • the room temperature deposition of the ITO (10 wt. % SnO 2 ) is carried out on the same deposition condition as in Embodiment 1. In this case, the deposition time is controlled so that the film thickness is 200 nm.
  • the resistivity, the transmittance of light at a wavelength of 380 nm, the arithmetic mean height Ra, and the crystal structure identified from the X-ray diffraction are shown.
  • the film is an amorphous film in which the arithmetic mean height Ra is less than 2.0 nm and the surface is extremely flat; has the transmittance of light which is more than 50% for thicknesses less than 500 nm, more than 55% for thicknesses less than 300 nm, and more than 65% for thicknesses less than 100 nm at a wavelength of 380 nm; and possesses the resistivity less than 8.0 ⁇ 10 ⁇ 3 ⁇ cm which is necessary and sufficient for the display device.
  • the features of the sintered body target for thin film fabrication of the present invention which is composed of Ga, In, and O and in which the Ga content expressed by Ga/(Ga+In) ranges from 35 at. % to 45 at. % are seen.
  • the X-ray diffraction peak intensity ratio defined by the formula described below ranges from 50% to 110%, the density is more than 5.8 g/cm 3 , and the resistivity is less than 4.0 ⁇ 10 ⁇ 2 ⁇ cm, so that the target has properties necessary and sufficient to obtain the transparent conductive film.
  • the transparent conductive film of the present invention like Embodiments 1-11, exhibits the original features and is useful for the transparent conductive base material.
  • the display device that is excellent in visibility can be fabricated in contrast with the case where the transparent conductive base material of the conventional ITO film is used.
  • the transparent conductive film according to the present invention is formed as an amorphous oxide film composed of Ga, In, and O, in which the Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, the resistivity ranges 1.2 ⁇ 10 ⁇ 3 ⁇ cm to 8.0 ⁇ 10 ⁇ 3 ⁇ cm, the film thickness is 500 nm or less, and the transmittance of light at a wavelength of 380 nm is 50% or more.
  • the transparent conductive film has a low resistivity and a high transmittance of light in the visible region of short wavelengths which formerly have never been obtained, and combines dominant features that breakage is hard to occur which is inherent in the amorphous film, the arithmetic mean height is low, and a film surface is smooth.
  • the transparent conductive film and the display device using such transparent conductive films are useful as versatile display devices.

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