US20070238201A1 - Dynamic metrology sampling with wafer uniformity control - Google Patents

Dynamic metrology sampling with wafer uniformity control Download PDF

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Publication number
US20070238201A1
US20070238201A1 US11/390,415 US39041506A US2007238201A1 US 20070238201 A1 US20070238201 A1 US 20070238201A1 US 39041506 A US39041506 A US 39041506A US 2007238201 A1 US2007238201 A1 US 2007238201A1
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Prior art keywords
processing
wafer
map
post
data
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US11/390,415
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Merritt Funk
Radha Sundararajan
Daniel Prager
Wesley Natzle
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Tokyo Electron Ltd
International Business Machines Corp
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Individual
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Priority to US11/390,415 priority Critical patent/US20070238201A1/en
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION (IBM) reassignment INTERNATIONAL BUSINESS MACHINES CORPORATION (IBM) ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NATZLE, WESLEY
Assigned to TOKYO ELECTRON, LTD. reassignment TOKYO ELECTRON, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FUNK, MERRITT, PRAGER, DANIEL JOSEPH, SUNDARARAJAN, RADHA
Priority to KR1020087026270A priority patent/KR101311640B1/ko
Priority to CN200780011392XA priority patent/CN101410844B/zh
Priority to JP2009503101A priority patent/JP5028473B2/ja
Priority to PCT/US2007/060953 priority patent/WO2007117737A2/en
Priority to TW096110397A priority patent/TWI393169B/zh
Publication of US20070238201A1 publication Critical patent/US20070238201A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Definitions

  • the present invention relates to a system and method for processing a wafer, and more particularly to a system and method for using run-to-run control to improve within wafer uniformity.
  • IM integrated metrology
  • the structures on the semiconductor wafers have not only decreased in size but also have increased in density causing additional processing control problems. Areas on semiconductor wafers have been identified as being isolated areas or nested areas based on the density of structures within the particular area and problems have developed in the semiconductor processing due to these different densities.
  • Isolated/nested control has become part of the mask design process, including the modeling of the process through the etcher.
  • the isolated/nested model designed into the mask making process is optimized for a single CD target related to an isolated or nested structure
  • Mask bias control utilizes optical and process correction (OPC), sometimes called optical proximity correction, in which the apertures of the reticule are adjusted to add or subtract the necessary light to increase pattern fidelity.
  • OPC optical and process correction
  • PSM phase-shift masks
  • topographic structures are created on the reticule to introduce contrast-enhancing interference fringes in the image.
  • the principles of the present invention are directed to a method of processing a wafer
  • the wafer can include a plurality of dies, each die having a patterned hard mask layer on top of at least one other layer, Metrology data is determined for the wafer.
  • the metrology data includes critical dimension (CD) data for at least one hard mask feature on the wafer and data for the at least one other layer, the metrology data being determined using historical data or measured data, or a combination thereof for a first number of measurement sites on the wafer.
  • a pre-processing measurement map is created for the wafer using the metrology data.
  • a first pre-processing prediction map is calculated for the wafer, the first pre-processing prediction map including a first set of predicted measured data for a first set of dies on the wafer.
  • a second pre-processing prediction map is calculated for the wafer, the second pre-processing prediction map including a second set of predicted measured data for a second set of dies on the wafer.
  • a pre-processing confidence map is calculated for the wafer, the pre-processing confidence map including a set of confidence data for a third set of dies on the wafer, wherein the confidence data is determined using a difference between the first pre-processing prediction map and the second pre-processing prediction map.
  • a first prioritized measurement site is calculated when confidence data for one or more dies is not within confidence limits for the wafer. New metrology data is obtained for the wafer using a new measurement recipe that includes the first prioritized measurement site.
  • FIG. 1 shows an exemplary block diagram of a processing system in accordance with an embodiment of the present invention
  • FIG. 2 shows a simplified block diagram of another processing system in accordance with an embodiment of the invention
  • FIG. 3 shows an exemplary view of an optical metrology system in accordance with an embodiment of the invention
  • FIG. 4 illustrates a simplified schematic view of a gate formation process in accordance with embodiments of the invention
  • FIG. 5 illustrates a simplified flow diagram for pre-processing a wafer in accordance with embodiments of the invention
  • FIG. 6 illustrates an exemplary flow diagram of a method for operating a processing system in accordance with an embodiment of the invention
  • FIGS. 7A , and 7 B show exemplary views of pre-processing measurement maps in accordance with embodiments of the invention.
  • FIG. 8 illustrates an exemplary view of a pre-processing prediction map in accordance with an embodiment of the invention
  • FIG. 9 illustrates an exemplary view of a pre-processing confidence map in accordance with embodiments of the invention.
  • FIG. 10 shows an exemplary view of a new pre-processing measurement map in accordance with embodiments of the invention.
  • FIG. 11 illustrates an exemplary trimming process in accordance with embodiments of the invention
  • FIG. 12 shows a simplified view of a process results map in accordance with embodiments of the invention.
  • FIGS. 13A and 13B show exemplary views of post-processing measurement maps in accordance with embodiments of the invention.
  • FIG. 14 illustrates an exemplary view of a post-processing prediction map in accordance with an embodiment of the invention
  • FIG. 15 illustrates an exemplary view of a post-processing confidence map in accordance with embodiments of the invention
  • FIG. 16 shows an exemplary view of a new post-processing measurement map in accordance with embodiments of the invention.
  • FIGS. 17A-17C illustrate different processing methods for performing dynamic sampling in accordance with embodiments of the invention.
  • pattern etching comprises the application of a thin layer of light-sensitive material, such as photoresist, to a wafer that is subsequently patterned in order to provide a mask for transferring this pattern to the underlying material during etching.
  • the patterning of the light-sensitive material generally involves exposure by a radiation source of the light-sensitive material using, for example, a micro-lithography system, followed by the removal of the irradiated regions of the light-sensitive material (as in the case of positive photoresist), or non-irradiated regions (as in the case of negative resist) using a developing solvent.
  • Soft mask and/or hard mask layers can be used. For example, when etching features using a soft mask top layer, the mask pattern in the soft mask layer is transferred to the hard mask layer using a separate etch step (hard mask open) preceding the other etch steps.
  • the soft mask can be selected from several materials for silicon processing including, but not limited to, ArF resist materials or photoresist materials compatible with smaller feature sizes,
  • the hard mask can, for example, be selected from several materials for silicon processing including, but not limited to, silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ), and carbon.
  • FIG. 1 shows an exemplary block diagram of a processing system in accordance with an embodiment of the present invention.
  • processing system 100 comprises a processing tool 110 , a controller 120 coupled to the processing tool 110 , and a manufacturing equipment system (MES) 130 coupled to the processing tool 110 and the controller 120 .
  • the processing tool 110 can include a number of processing modules 115 that can be coupled to a transfer system 150
  • an integrated metrology module (IMM) 140 can be coupled to the processing tool 110 .
  • the IMM 140 can be coupled to the transfer system 150 .
  • the IMM 140 may be coupled to the processing tool 110 in a different manner.
  • At least one of the processing tool 110 , the controller 120 , the MES 130 , and the IMM 140 can comprise a control component, a Graphical User Interface (GUI) component and/or a database component (not shown). In alternate embodiments, one or more of these components may not be required.
  • GUI Graphical User Interface
  • Factory level business rules can be used to establish a control hierarchy. Business rules can be used to specify the action taken for normal processing and the actions taken on error conditions. For example, the processing tool 110 and/or the controller 120 can operate independently, or can be controlled to some degree by the factory system 130 . Also, factory level business rules can be used to determine when a process is paused and/or stopped, and what is done when a process is paused and/or stopped. In addition, factory level business rules can be used to determine when to change a process and how to change the process.
  • Business rules can be defined at a control strategy level, a control plan level or a control model level.
  • Business rules can be assigned to execute whenever a particular context is encountered. When a matching context is encountered at a higher level as well as a lower level, the business rules associated with the higher level can be executed.
  • GUI screens can be used for defining and maintaining the business rules. Business rule definition and assignment can be allowed for users with greater than normal security level.
  • the business rules can be maintained in the database. Documentation and help screens can be provided on how to define, assign, and maintain the business rules.
  • the MES 130 can be configured to monitor some system processes using data reported from the databases associated with the processing tool 110 and/or the controller 120 .
  • Factory level business rules can be used to determine which processes are monitored and which data is used.
  • the processing tool 110 and/or the controller 120 can independently collect data, or the data collection process can be controlled to some degree by the factory system 130 .
  • factory level business rules can be used to determine how to manage the data when a process is changed, paused and/or stopped.
  • the MES 130 can provide run-time configuration information to the processing tool 110 and/or the controller 120 .
  • Data can be exchanged using GEM SECS communications protocol.
  • APC settings, targets, limits, rules, and algorithms can be downloaded from the factory to the processing tool 110 and/or the controller 120 as an “APC recipe”, an “APC system rule”, and “APC recipe parameters”.
  • Measurement system recipes and settings can be downloaded from the factory to the processing tool 110 and/or the controller 120 as an “IMM recipe”, an “IMM system rule”, and “IMM recipe parameters”.
  • rules allow system and/or tool operation to change based on the dynamic state of the processing system 100 .
  • Some setup and/or configuration information can be determined by the processing tool 110 and/or the controller 120 when they are initially configured by the processing system 100 .
  • tool level rules can be used to establish a control hierarchy at the tool level.
  • the processing tool 110 and/or the IMM 140 can operate independently, or the IMM 140 can be controlled to some degree by the processing tool 110 .
  • tool level rules can be used to determine when a process is paused and/or stopped, and what is done when a process is paused and/or stopped.
  • tool rules can be used to determine when to change a process, how to change the process, and how to manage the data.
  • FIG. 1 one processing tool 110 , and one controller 120 are shown, but this is not required for the invention.
  • the semiconductor processing system can comprise any number of processing tools having any number of controllers associated with them in addition to independent process tools and modules.
  • the processing tool 110 and/or the controller 120 can be used to configure any number of processing tools having any number of processing tools associated with them in addition to any number of independent process tools and modules.
  • the processing tool 110 and/or the controller 120 can collect, provide, process, store, and display data from processes involving processing tools, processing subsystems, process modules, and sensors.
  • the processing tool 110 and/or the controller 120 can comprise a number of applications including at least one tool-related application, at least one module-related application, at least one sensor-related application, at least one interface-related application, at least one database-related application, at least one GUI-related application, and at least one configuration application, among others.
  • the system 100 can comprise an APC system from Tokyo Electron Limited that can interface with a Unity ®Tool, a Telius® Tool and/or a Trias® Tool and their associated processing subsystems and process modules.
  • the system can comprise a run-to-run (R2R) controller, such as the Ingenio® TL ES server from Tokyo Electron Limited, and an integrated metrology module (IMM) from Tokyo Electron Limited.
  • R2R run-to-run
  • IMM integrated metrology module
  • the controller 120 can support other process tools and other process modules.
  • a GUI component (not shown) can provide easy to use interfaces that enable users to: view tool status and process module status; create and edit x-y charts of summary and raw (trace) parametric data for selected wafers; view tool alarm logs; configure data collection plans that specify conditions for writing data to the database or to output files; input files to Statistical Process Control (SPC) charting, modeling and spreadsheet programs; examine wafer processing information for specific wafers, and review data that is currently being saved to the database; create and edit SPC charts of process parameters, and set SPC alarms which generate e-mail warnings; run multivariate Principal Component Analysis (PCA) and/or Partial Least Squares (PLS) models; and view diagnostics screens in order to troubleshoot and report problems with the TL controller 120 .
  • the GUI component need not provide interfaces for all functions. Instead the GUI may provide interfaces for any subset of these functions or others not listed here.
  • Controller 120 can include a memory (not shown) that can include one or more databases.
  • Data from the tool can be stored as files in a database.
  • IM data and host metrology data can be stored in the database. The amount of data depends on the data collection plans that are configured, as well as the frequency with which processes are performed and processing tools are run.
  • the data obtained from the processing tools, the processing chambers, the sensors, and the operating system can be stored in the database.
  • the system 100 can comprise a client workstation (not shown).
  • the system 100 can support a plurality of client workstations.
  • a client workstation can allow a user to perform configuration procedures; to view status including tool, controller, process, and factory status; to view current and historical data; to perform modeling and charting functions; and to input data to the controller.
  • a user may be provided with administrative rights that allow him to control one or more processes performed by a system component.
  • Processing tool 110 and the controller 120 can be coupled to MES 130 and can be part of an E-Diagnostic System.
  • the processing tool 110 and/or the controller 120 can exchange information with a factory system.
  • the MES 130 can send command and/or override information to the processing tool 110 and/or the controller 120 .
  • the MES 130 can feed-forward to the processing tool 110 and/or the controller 120 downloadable recipes for any number of process modules, tools, and measuring devices, with variable parameters for each recipe.
  • Variable parameters can include final CD targets, limits, offsets, and variables in the tool level system that needs to be adjustable by lot.
  • metrology data can be feed-forwarded to controller 120 from a factory system or a lithography tool, such as a Lithius® tool from Tokyo Electron Limited.
  • the MES 130 can be used to provide measurement data, such as Critical Dimension Scanning Electron Microscope (CD SEM) information, to the controller 120 .
  • CD SEM Critical Dimension Scanning Electron Microscope
  • the CD SEM information can be provided manually. Adjustment factors are used to adjust for any offset between the IM and CD SEM measurements.
  • the measurement and/or historical data can include wafer identification information and a timestamp, such as a date, for proper insertion in to the database.
  • a single processing tool 110 is also shown in FIG. 1 , but this is not required for the invention. Alternately, additional processing tools can be used.
  • a processing tool 110 can comprise one or more processing modules. Processing tool 110 can comprise an etch module, a deposition module, a measurement module, a polishing module, a coating module, a developing module, or a thermal treatment module, or any combination of two or more thereof.
  • Processing tool 110 can comprise link 112 for coupling to at least one other processing tool and/or controller.
  • other processing tools and/or controllers can be associated with a process that has been performed before this process, and/or other controllers can be associated with a process that is performed after this process.
  • Link 112 can be used to feed forward and/or feed back information.
  • feed forward information can comprise data associated with an in-coming wafer. This data can include lot data, batch data, run data, composition data, and wafer history data.
  • the IMM 140 can include an Optical Digital Profiling (ODP) system.
  • the processing tool 110 can also include module related measurement devices, tool-related measurement devices, and external measurement devices.
  • data can be obtained from sensors coupled to one or more process modules and sensors coupled to the processing tool.
  • Sensors can include an Optical Emission Spectroscopy (OES) sensor or an optical end point detection sensor.
  • OES Optical Emission Spectroscopy
  • the wavelength ranges for these sensors can extend from 200 nm to 900 nm.
  • data can be obtained from an external device such as a Scanning Electron Microscopy (SEM) tool, a Transmission Electron Microscopy (TEM) tool, and an Optical Digital Profiling (ODP) tool.
  • SEM Scanning Electron Microscopy
  • TEM Transmission Electron Microscopy
  • ODP Optical Digital Profiling
  • ODP tool is available for Timbre Technologies Inc. (a TEL company) that provides a patented technique for measuring the profile of a structure in a semiconductor device.
  • ODP techniques can be used to obtain critical dimension (CD) information, structure profile information, or via profile information.
  • Controller 120 is coupled to processing tool 110 and MES 130 , and information such as pre-processing data and post-processing data can be exchanged between them. For example, when an internal error event is generated by the tool, the controller 120 can send a message, containing information about the event, to the MES 130 . This can allow the factory system and/or factory personnel to make the necessary changes to minimize the number of wafers at risk after a major change occurs such as those that occur during corrective or preventative maintenance.
  • a single controller 120 is also shown in FIG. 1 , but this is not required for the invention. Alternately, additional controllers can be used.
  • the controller 120 can comprise at least one of a run-to-run (R2R) controller, a feed-forward (FF) controller, a process model controller, a feed-back (FB) controller, and a process controller (all not shown in FIG. 1 ).
  • Controller 120 can comprise link 122 for coupling to at least one other controller.
  • other controllers can be associated with a process that has been performed before this process, and/or other controllers can be associated with a process that is performed after this process.
  • Link 122 can be used to feed forward and/or feedback information.
  • the controller 120 knows the input state and a model equation for the desired state for the wafer, and the controller determines a set of recipes that can be performed on the wafer to change the wafer from the input state to a processed state. In another case, the controller 120 determines the input state and desired state for the wafer, and the controller 120 determines a set of recipes that can be performed on the wafer to change the wafer from the input state to the desired state.
  • the set of recipes can describe a multi-step process involving a set of process modules.
  • One time constant for the controller 120 can be based on the time between measurements.
  • the controller's time constant can be based on the time between lots.
  • the controller's time constant can be based on the time between wafers.
  • the controller's time constant can be based on processing steps, within a wafer.
  • the controller 120 can have multiple time constants that can be based on the time between process steps, between wafers, and/or between lots.
  • One or more controllers 120 can be operating at any point in time. For example, one controller 120 can be in an operating mode while a second controller 120 can be in a monitoring mode. In addition, another controller 120 can be operating in a simulation mode.
  • a controller can comprise a single loop or multiple loops, and the loops can have different time constants. For example, loops can be dependent on wafer timing, lot timing, batch timing, chamber timing, tool timing, and/or factory timing.
  • the controller 120 can compute a predicted state for the wafer based on the input state, the process characteristics, and a process model.
  • a trim rate model can be used along with a processing time to compute a predicted trim amount.
  • an etch rate model can be used along with a processing time to compute an etch depth
  • a deposition rate model can be used along with a processing time to compute a deposition thickness.
  • models can include SPC charts, PLS models, PCA models, Fault Detection and Classification (FDC) models, and Multivariate Analysis (MVA) models.
  • the controller 120 can receive and utilize externally provided data for process parameter limits in a process module.
  • the controller GUI component provides a means for the manual input of the process parameter limits.
  • a factory level controller can provide limits for process parameters for each process module.
  • the controller 120 can receive and execute models created by commercially available modeling software. For example, the controller can receive and execute models that were created by external applications and sent to the controller.
  • controller 120 can be used to run FDC applications and can send and/or receive information concerning an alarm/fault condition.
  • the controller can send and receive FDC information to and from a factory level controller or a tool level controller.
  • FDC information can be sent via the e-Diagnostics network, e-mail, or pager after the identification of an error condition.
  • FDC applications can be run on different controllers.
  • the controller 120 can take various actions in response to an alarm/fault, depending on the nature of the alarm/fault.
  • the actions taken on the alarm/fault can be based on the business rules established for the context specified by the system recipe, process recipe, module type, module identification number, load port number, cassette number, lot number, control job ID, process job ID, slot number and/or the type of map.
  • the controller determines the actions to take. Alternately, the controller can be instructed to take some specific actions by the FDC system.
  • the controller 120 can comprise a database component for archiving input and output data.
  • the controller can archive, among other things, received inputs, sent outputs, and actions taken by the controller in a searchable database.
  • the controller 120 can comprise hardware and/or software for data backup and restoration.
  • the searchable database can include model information, configuration information, and historical information and the controller 120 can use the database component to backup and restore model information and model configuration information both historical and current.
  • the searchable database can include map information, such as wafer maps and/or process maps, configuration information, and historical information and the controller can use the database component to backup and restore the map information and map configuration information both historical and current.
  • the controller 120 can comprise a web-based user interface.
  • the controller 120 can comprise a web enabled GUI component for viewing the data in the database.
  • the controller can comprise a security component that can provide for multiple levels of access depending on the permissions granted by a security administrator.
  • the controller 120 also can comprise a set of default models that are provided at installation time and have the ability to reset to default conditions.
  • the controller has the capability of managing multiple process models that are executed at the same time and are subject to different sets of process recipe constraints.
  • the controller can run in three different modes: simulation mode, test mode, and standard mode.
  • a controller can operate in simulation mode in parallel with the actual process mode.
  • FDC applications can be run in parallel and produce real-time results.
  • the host system can operate as the master system and can control and/or monitor a major portion of the processing operations.
  • the host system can create a process sequence, and can send the process sequence to the processing system.
  • the process sequence can comprise a sequence of measurement module visits and processing module visits.
  • a process job (PJ) can be created for each measurement module visit and each processing module visit.
  • virtual measurements and/or maps can be made when a processing system controller executes in a simulation mode.
  • the results from simulation mode executions can be stored and used to predict process drift and/or potential fault conditions.
  • a single processing tool 110 is also shown in FIG. 1 , but an arrangement including only one processing tool 110 is not required for the invention. Alternately, additional processing tools can be used.
  • the processing tool 110 can comprise means for performing a trimming procedure as described.
  • the processing tool 110 may comprise an etch module, a deposition module, a polishing module, a coating module, a developing module, an ashing module, an oxidation module, or a thermal treatment module, among others, or any combination of two or more thereof.
  • FIG. 2 shows a simplified block diagram of an integrated processing system 200 in accordance with an embodiment of the invention.
  • a processing system TELIUS®
  • IMM integrated metrology module
  • FIG. 2 shows a simplified block diagram of an integrated processing system 200 in accordance with an embodiment of the invention.
  • a processing system TELIUS®
  • IMM integrated metrology module
  • FIG. 2 shows a simplified block diagram of an integrated processing system 200 in accordance with an embodiment of the invention.
  • a processing system TELIUS®
  • IMM integrated metrology module
  • the system 200 ′ can provide IMM wafer sampling and the wafer slot selection can be determined using a (PJ Create) function.
  • the R2R control configuration can include, among other variables, feed forward control plan variables, feedback control plan variables, metrology calibration parameters, control limits, and SEMI Standard variable parameters.
  • Metrology data reports can include wafer, site, structure, and composition data, among others, and the tool can report actual settings for the wafer.
  • the IMM system can include an optical measuring system such as a Timbre Technologies' Optical Digital Profilometry (ODP) system that uses spectroscopic ellipsometry, reflectometry, or other optical instruments to measure true device profiles, accurate critical dimensions (CD), and multiple layer film thickness of a wafer.
  • ODP Optical Digital Profilometry
  • CD critical dimensions
  • Timbre Technologies, Inc is a California corporation and wholly owned subsidiary of TEL.
  • ODP can be used with the existing thin film metrology tools for inline profile and CD measurement, and can be integrated with TEL processing tools to provide real-time process monitoring and control.
  • An ODP Profiler can be used both as a high precision metrology tool to provide actual profile, CD, and film thickness results, and a yield enhancement tool to detect in-line process excursion or process faults.
  • ODP® ProfilerTM Library comprises an application specific database of optical spectra and its corresponding semiconductor profiles, CDs, and film thicknesses.
  • ProfilerTM Application Server comprises a computer server that connects with optical hardware and computer network. It handles the data communication, ODP library operation, measurement process, results generation, results analysis, and results output.
  • the ODP® ProfilerTM Software includes the software installed on PAS to manage measurement recipe, ODP® ProfilerTM library, ODP® ProfilerTM data, ODP® ProfilerTM results search/match, ODP® ProfilerTM results calculation/analysis, data communication, and PAS interface to various metrology tools and computer network.
  • ODP techniques can be used to measure the presence and/or thickness of coatings and/or residues within features of a patterned wafer. These techniques are taught in co-pending U.S. patent application Ser. No. 10/357,705, entitled “Model Optimization for Structures with Additional Materials” by Niu, et al., filed on Feb. 3, 2003, and ODP techniques covering the measurement of additional materials are taught in U.S. Pat. No. 6,608,690, entitled “Optical Profilometry of Additional-material Deviations in a Periodic Grating”, filed on Dec. 4, 2001, and in U.S. Pat. No. 6,839,145, entitled “Optical Profilometry of Additional-material Deviations in a Periodic Grating”, filed on May 5, 2003, and all are incorporated by reference herein.
  • a control system such as the Ingenio® system from Tokyo Electron Limited, can comprise management applications, such as a recipe management application.
  • the recipe management application can be used to view and/or control a recipe stored in the Ingenio® system database that is synchronized with equipment via a network environment from the Ingenio® system.
  • An Ingenio® client can be placed separately at a distance from the factory, and can provide comprehensive management functions to multiple equipment units.
  • Recipes can be organized in a tree structure that can comprise recipe sets, classes, and recipes that can be displayed as objects. Recipes can include process recipe data, system recipe data, and IMM recipe data. Data can be stored and organized using a recipe set.
  • the IMM recipes that are on the processing tool 110 can be used to determine wafer sampling and a relationship between slots and IM recipes.
  • IM recipes can exist on IMM 140 , can be selected in Telius® IMM recipes, can contain pattern recognition information, can be used to identify the chips to sample on each wafer, and can be used to determine which PAS recipe to use.
  • PAS recipes can be used to determine which ODP library to use, and to define the measurement metrics to report, such as top CD, bottom CD, side wall angle (SWA), layer thicknesses, trench width, and goodness of fit (GOF).
  • a control system such as the Ingenio® system, can include APC applications that can operate as control strategies, and a control strategy can be associated with a control plan that can include an etching tool recipe. Wafer level context matching at runtime allows for custom configuration by wafer (slot, waferID, lotID, etc.).
  • a control strategy can include one or more control plans, and a process module and/or measurement module that is being controlled has at least one control plan defined for a visit to the process module and/or measurement module. Control plans can contain maps, models, control limits, targets, and can include static recipes, formula models, and feedback plans.
  • feed forward and/or feedback control can be implemented by configuring Control Strategies, Control Plans, and Control Models.
  • a Control Strategy can be written for each system process where feed forward and/or feedback control is implemented. When a strategy is protected, all of its child objects (plans and models) cannot be edited. When a system recipe executes, one or more of the Control Plans within the Control Strategy can be executed. Each control plan can be used to modify the recipe based on feed-forward and/or feed-back information.
  • a control strategy can be used to establish a processing recipe and processing tool; to determine control plans; to determine wafer maps, to establish an action in response to a failure; to establish context; to establish a control type (standard, simulated or test); to establish a control action (enabled/disabled); and to establish a control state (protected/unprotected).
  • Control strategies can comprise standard control strategies and simulation control strategies.
  • the standard control strategies can be configured to control the process tool 110 .
  • a simulation control strategy can be associated with simulation control plan(s). Based on the model selected, the control plan will tune the recipe variables.
  • the recipe variables can be logged by the controller but not sent to process tool. Multiple simulation control strategies can be executed simultaneously, but only one standard type of control plan will be executed for a given wafer.
  • a control strategy can include other fields that may be manipulated.
  • the LotID(s) field can be used to enter/edit the lot identifiers; the CJID(s) field can be used to enter/edit the control job identifiers.
  • the PJID(s) field can be used to enter/edit the process job identifiers.
  • the Cassette ID(s) field can be used to enter/edit the cassette identifiers.
  • the Carrier ID(s) field can be used to enter/edit the carrier identifiers.
  • the Slot(s) field can be used to enter/edit the slot numbers.
  • the Wafer Type(s) field can be used to enter/edit the wafer types.
  • the Scribed Wafer ID(s) field can be used to enter/edit the scribed wafer identifiers.
  • the Wafer ID(s) field can be used to enter/edit the wafer identifiers.
  • the Start Time earlier than field can be used to enter/edit the start time.
  • the Start Time later than field can be used to enter/edit the end time.
  • Control plans can cover multiple process steps within a module, and can be controlled by the factory. Parameter ranges can be defined for each process and/or measurement module, and variable parameter “Limit Ranges” are provided for each control parameter.
  • the control system can include APC applications that can be used to analyze the collected data, and establish error conditions.
  • An analysis application can be executed when a context is matched.
  • one or more analysis plans can be executed. For example, univariate SPC models/plans may be executed, and may trigger SPC alarms; PCA and/or PLS models/plans may be executed, and may trigger SPC alarms; multivariate SPC models/plans may be executed, and may trigger SPC alarms; and other file output plans may be executed, and may trigger software alarms.
  • a plan can create an error when a data failure occurs, an execution problem occurs, or a control problem occurs.
  • the plan can generate an alarm message; the parent strategy status can be changed to a failed status; the plan status can be changed to a failed status; and one or more messages can be sent to the alarm log and the FDC system.
  • a feed forward plan or a feedback plan fails, one or more of the plans in the parent strategy may be terminated, and their status can be changed to a failed status.
  • a control plan can detect and/or identify this as a faulty incoming wafer.
  • the feedback plan can skip a wafer that has been identified to be defective and/or faulty by another plan.
  • a data collection plan can reject the data at all the measurement sites for this wafer or reject the data because a map created using the data fails to meet uniformity limits.
  • feedback plan failure may not terminate the strategy or other plans, and a map generation failure may also not terminate the strategy or other plans.
  • Successful plans, strategies and/or map generations do not create any error/alarm messages.
  • the control system can include an FDC system that includes applications for managing error/alarm/fault conditions.
  • an FDC application in the FDC system can send a message to one or more processing modules and/or tools. For example, a message can be sent to pause the current process or to stop the current process. In one case, a tool pause/stop can be done by changing the value of the maintenance counter.
  • Pre-specified failure actions for strategy and/or plan errors can be stored in a database, and can be retrieved from the database when an error occurs. Failure actions can include using the nominal process recipe for this wafer and module; using a null process recipe for this wafer and module; pausing the process module and waiting for intervention; or pausing the whole tool and waiting for intervention. For example, a processing tool may take action only when the wafer with the error reaches the target process module where the R2R failure occurred, and the processing tool may be able to continue processing other lots, recipes, or wafers in other modules.
  • a null recipe can be a control recipe that is used by a processing tool and/or processing system to allow a wafer to pass through a processing chamber without processing. For example, a null recipe can be used when a processing tool is paused or when a wafer does not require processing.
  • the FDC system can detect faults, predict tool performance, predict preventative maintenance schedules, decrease maintenance downtime, and extend the service life of consumable parts in the processing tool.
  • the FDC system collects data from the tool and additional sensors, calculates summary parameters, performs MVAs, and compares the results with normal operation using SPC.
  • the SPC component can perform a series of Western Electric run-rule evaluations, and generates an SPC alarm if a run-rule is violated.
  • the operations of the APC system and the FDC system can be configured by the customer and can be based on the context of the wafers being processed.
  • Context information includes recipe, lot, slot, control job, and process job.
  • the user interfaces for APC system and the FDC system are web-enabled, and provide a near real time tool status and a real time alarm status display.
  • FIG. 3 shows an exemplary view of an optical metrology system in accordance with an embodiment of the invention.
  • an optical metrology system 300 is shown that can be configured to examine periodic grating 304 to obtain overlay measurements.
  • optical metrology system 300 can include an electromagnetic source 310 .
  • Periodic grating 304 is illuminated by an incident signal 312 from electromagnetic source 310 .
  • Electromagnetic source 310 can include focusing optics to control the spot size of incident signal 312 .
  • the spot size of incident signal 312 can be reduced to less than the size of the test area on wafer 302 that contains periodic grating 304 .
  • a spot size of about 50 micrometers by 50 micrometers, or smaller, can be used.
  • electromagnetic source 310 can include a pattern recognition module to center the spot in the test area on wafer 302 .
  • electromagnetic source 310 can include a polarizing element such as a polarizer (not shown).
  • incident signal 312 is directed onto periodic grating 304 at an incidence angle ⁇ i with respect to normal ⁇ right arrow over (n) ⁇ of periodic grating 304 , and an azimuthal angle ⁇ (i.e., the angle between the plane of incidence signal 312 and the direction of the periodicity of periodic grating 304 ).
  • diffraction signal 322 leaves at an angle of ⁇ d with respect to normal ⁇ right arrow over (n) ⁇ .
  • diffraction signal 322 includes a plurality of diffraction orders.
  • FIG. 3 illustrates diffraction signal 322 having a zero-order diffraction (diffraction signal 322 A), a positive first-order diffraction (diffraction signal 322 B), and a negative first-order diffraction (diffraction signal 322 C). It should be recognized, however, that diffraction signal 322 can include any number of diffraction orders.
  • Diffraction signal 322 is received by detector 320 and analyzed by signal-processing system 330 .
  • optical metrology system 300 includes an ellipsometer, the amplitude ratio tan ⁇ and the phase ⁇ of diffraction signal 322 is received and detected.
  • optical metrology system 300 includes a reflectometer, the relative intensity of diffraction signal 322 is received and detected.
  • detector 320 may include a polarizing element (not shown) such as an analyzer.
  • periodic grating 304 is illuminated obliquely and conically, meaning that incidence angle ⁇ 1 is not equal to zero degrees and the azimuthal angle ⁇ is not equal to zero degrees.
  • Zero-order cross polarization measurements can be obtained, and then overlay measurements can be obtained based on the zero-order cross polarization measurements.
  • one or more periodic gratings 304 can be examined to obtain metrology measurements.
  • source 310 directs an oblique and conical incident signal at periodic grating 104 .
  • Detector 320 receives the zero-order diffraction signal 322 A.
  • the zero-order cross polarization measurements can be obtained, and the signal-processing system 330 can then determine the feature parameters based on the obtained measurements.
  • zero-order cross polarization measurements can be obtained from a single location/site on periodic grating 304 , and the signal-processing system 330 can provide some metrology data without having to move wafer 302 , which has the advantage of increasing throughput.
  • Zero-order light refers to the light reflected at an angle equal to the incident angle.
  • the signal-processing system 330 can compute a difference between the zero-order cross polarization measurements and use the computed difference to provide additional metrology data.
  • Signal-processing system 330 can include any convenient computer system configured to process zero-order cross polarization measurements.
  • the controller 120 can use equation-based techniques, formula-based techniques, and table-based techniques in different processing regimes. When the controller 120 uses these techniques, the feed-forward and/or feedback control variables can be configurable.
  • the controller 120 can operate as a single input single output (SISO) device, as a single input multiple output (SIMO) device, as a multiple input single output (MISO) device, and/or as a multiple input multiple output (MIMO) device, among other variants.
  • inputs and outputs can be within one controller 120 and/or between one or more controllers 120 .
  • map information can be fed-forward or fed-back from one controller to another controller.
  • this data can be accessed by the controller 120 .
  • this data can comprise tool trace data, maintenance data, and End Point Detection (EPD) data.
  • the trace data can provide important information about the process.
  • the trace data can be updated and stored during processing or after the processing of a wafer is completed.
  • the controller 120 can receive and utilize externally provided data for process parameter limits in a process module.
  • the controller GUI component provides a means for the manual input of the process parameter limits.
  • a factory level controller can provide limits for process parameters for each process module.
  • the controller 120 can receive and execute models created by commercially available modeling software.
  • the controller 120 can receive and execute models (PLA, PCA, etc.) that were created by external applications and sent to the controller 120 .
  • Map and/or model updates can be performed by running monitor wafers, varying the process settings and observing the results, then updating the map and/or model. For example an update can take place every N processing hours by measuring the before and after characteristics of a monitor wafer. By changing the settings over time to check different operating regions one could validate the complete operating space over time, or run several monitor wafers at once with different recipe settings.
  • the update procedure can take place within the controller 120 at the tool or at the factory, allowing the factory control to manage the monitor wafers and model updates.
  • the controller 120 can compute an updated recipe and/or updated map for the next wafer.
  • the controller 120 can use the feed-forward information, modeling information, and the feedback information to determine whether or not to change the current recipe before running the current wafer, before running the next wafer, or before running the next lot.
  • a route sequence can be specified which causes a wafer to be routed to the IMM 140 at the correct point in the process. For example, a wafer can be routed to the IMM 140 before entering a processing module 115 and/or after the wafer has been processed in a processing module 115 .
  • an IM recipe can be specified which causes a set of pre-determined measurements to be made and a pre-determined set of output data to be provided. For example, the data can be filtered before the data is averaged and used by the controller 120 .
  • the controller 120 can comprise one or more filters (not shown) to filter the metrology data in order to remove the random noise.
  • An outlier filter can be used to remove outliers that are statically not valid and should not be considered in the calculation of the mean of a wafer measurement.
  • a noise filter can be used to remove random noise and stabilize the control loop, an Exponentially Weighed Moving Average (EWMA) or Kalman filter can be applied.
  • EWMA Exponentially Weighed Moving Average
  • Kalman filter can be applied.
  • the controller 120 can receive and utilize feedback data. For example, the controller 120 can receive map information for wafers that has already been processed and adjust the process model based on this data.
  • the controller 120 can send and receive notification of an error condition.
  • the controller 120 can send and receive notifications to and from a factory level controller, a R2R controller, and/or a tool level controller, among other devices.
  • a notification can be sent via the e-Diagnostics network, e-mail, or pager after the identification of an error condition.
  • the controller 120 can calculate and/or run process maps and/or models in a simulated mode.
  • the controller 120 can operate in simulation mode in parallel with the actual process mode.
  • the simulated actions can be recorded in the historical database, and immediate action is not taken.
  • the controller 120 can select process maps and/or models based on incoming material context. For example, the controller 120 can select process maps and/or models based on the incoming material state and process recipe.
  • the controller can comprise means to verify that the system 100 can calculate a valid R2R setting.
  • the controller 120 inputs can include time constants for feed-forward/feed-back loops, a reset event for accumulation, an IMM step, and ODP offset, among others.
  • Instructions can include, inter alia, targets, tolerances, computational commands, data collection plans, algorithms, models, coefficients, and recipes.
  • the Wafer State can include information, for example, from the wafer being processed (site, wafer, lot, batch state), profiles, and characteristics measured physically or electrically.
  • the Module Physical State can include the current or last known recorded state of the module and components that will be used to process the wafer—RF hours, number of wafers, consumable states.
  • the Process State can include the current or last known measured state from sensors of the processing environment, including trace data, and summary statistics.
  • the Controller Parameters can include the last settings for the recipe/controller set points and process targets that created the wafer state, module physical state, and process state.
  • the controller 120 can comprise at least one computer and software that supports operational software, such as the Ingenio® software.
  • the operational software can include a configuration module, a data management module, a GUI module, a fault management module, or a trouble-shooting module, or any combination of two or more thereof.
  • configuration GUI screens can be used to configure the interface between the computer and the processing element, to determine the device type for the processing element (i.e., tool, module, sensor, etc.).
  • Data management GUI screens can be used to determine the amount and type of data to collect and to determine how to and where to store the collected data.
  • fault management GUI screens can be used to inform a user about fault conditions.
  • feed-forward control is the updating of a process module recipe using pre-process data measured on the wafer prior to its arrival in the process module.
  • metrology data and process target data are received by the controller 120 . These values can be compared, and the result is the desired process result (for example, the desired trim amount). Then, this desired process result can be sent to the controller for model selection and calculation of the appropriate process recipe parameters.
  • This new recipe is sent to the process module and the wafer is processed (trimmed) using the new recipe.
  • feed-forward control can be implemented, in the controller 120 , by configuring Control Strategies, Control Plans, and Control Models.
  • a Control Strategy can be written for each system recipe where feed-forward control is implemented.
  • the Control Plans within the Control Strategy can be executed.
  • Each control plan can be used to modify the recipe based on feed-forward information.
  • a control plan can include input data sources.
  • a different number of input data sources can be used, and each input data source can have a different symbol value.
  • one data source can be an ODP tool, and it can be part of the processing tool, such as a Telius®.
  • another data source can be a SEM, and the Parameter/Value can be actual measured data such as a CD-SEM data.
  • a user can specify a calculation for the target calculation. The result of this calculation is then used to choose which control model to execute.
  • the system starts with the Nominal Recipe (the recipe as it exists on the tool). Then, the updates from each executed Control Plan are added. Once all the Control Plans are executed (within the matching Control Strategy), the final recipe is sent to the tool.
  • the controller 120 can operate as a recipe parameter solver that produces recipe parameters according to appropriate process model, process model constraints, process targets, and process parameter constraints.
  • the controller 120 has the capability of managing multiple process models that are executed at the same time and are subject to a single set of process recipe constraints. If control failure occurs, the controller 120 can be configured to use the tool process recipe (nominal recipe), use the null recipe, or to stop Run-to-Run control (according to tool parameter settings). To pause the tool 110 , the controller 120 can be configured to pause the process module, or to pause the entire system 100 .
  • FIG. 4 illustrates a simplified schematic view of a gate formation process in accordance with embodiments of the invention.
  • a Hard Mask Open (HMO) step 410 is shown, a first measurement step 415 is shown, a trimming step 420 is shown, a poly etching step 425 is shown, a second measurement step 430 is shown, a cleaning step 435 is shown, and a third measurement step 440 is shown.
  • HMO Hard Mask Open
  • a different set of steps may be used. For example, fewer measurement steps may be used, and/or a measurement step may be performed before the HMO step.
  • the processing system 100 can be used to process wafers having isolated and nested features and control strategies can be used to define the process sequence.
  • the processing tool selects one IM recipe to use, and separate IMM recipes can be used for isolated and nested structures. Each wafer can be measured separately for each pitch and structure.
  • a wafer can be loaded into an integrated metrology (IM) module; an IM recipe can be loaded into the IM module; and a Profiler Application Server (PAS) recipe can be loaded into the IM controller.
  • IM integrated metrology
  • PAS Profiler Application Server
  • the wafer can be measured and an ODP recipe can be loaded into the IM controller.
  • the library can then be searched using the measured spectrum, and one or more isolated structures can be identified. When isolated structures are being measured, IM, PAS, and ODP recipes for isolated structures can be used.
  • IM integrated metrology
  • PAS integrated metrology
  • ODP ODP recipe
  • the library can be searched using the measured spectrum, and one or more nested structures can be identified.
  • IM, PAS, and ODP recipes for nested structures can be used.
  • the measurement sequence can be performed for one or more different locations on a wafer, and the wafer can be unloaded.
  • a measurement grating having a first pitch is provided that is consistent with the isolated structures/features for a particular product and technology and another measurement grating having a second pitch is provided that is consistent with the nested structures/features for this product and technology.
  • a 595 nm grating can be used for isolated structures and a 245 nm grating can be used for nested structures.
  • additional measurement gratings may be provided and different pitches may be provided.
  • FIG. 5 illustrates a simplified flow diagram for pre-processing a wafer in accordance with embodiments of the invention.
  • an Iso/Nested procedure 500 is shown, and an Iso/Nested procedure 500 can be performed to produce a patterned mask on a wafer.
  • a different procedure may be performed or an Iso/Nested procedure may not be required.
  • a query can be performed to determine if the isolated features are greater than or equal to the nested features.
  • Procedure 500 can branch to 520 , when the isolated features are greater than or equal to the nested features.
  • Procedure 500 can branch to 530 , when the isolated features are less than the nested features.
  • an Isolated-Greater Control Strategy and the associated control plans can be executed, when an Isolated-CD value is greater than or equal to the Nested-CD value.
  • the control plans can include at least one of an Isolated/nested control plan for controlling an isolated/nested process, a Trim Control plan for controlling a trimming process, and a Bottom Anti-Reflective Coating/Anti-Reflective Coating (BARC/ARC) open control plan for controlling a BARC and/or ARC etching process.
  • BARC/ARC Bottom Anti-Reflective Coating/Anti-Reflective Coating
  • a null recipe can be sent to the processing tool. Alternately, a recipe may not be sent to the processing tool.
  • the isolated/nested process can include an etching process when the Isolated-CD value is greater than the Nested-CD value.
  • an isolated/nested etching process can be run using a chamber pressure approximately equal to 10 mT, an upper RF power approximately equal to 200 W, an lower RF power approximately equal to 0 W; an O 2 flow rate approximately equal to 70 sccm, the back side He pressure can be approximately equal to 3 Torr in the center region, the back side He pressure can be approximately equal to 3 Torr in the edge region, the top plate temperature can be approximately equal to 80° C., the chamber wall temperature can be approximately equal to 60° C., the wafer holder temperature can be approximately equal to 30° C., and the processing time can be approximately equal to 36 sec.
  • the CD change for a nested feature was measured to be approximately equal to ⁇ 23 nm, and the CD change for isolated feature was measured to be approximately equal to ⁇ 33 nm.
  • a trim process can be performed first in which substantially the same amount is trimmed (laterally etched) from the isolated soft mask features and the nested soft mask features. After the trim process is performed, the isolated soft mask feature size remains larger than the nested soft mask feature size. During a trim process, another layer can be partially etched. Next, an isolated/nested etching process can be performed in which unequal amounts are trimmed (laterally etched) from the isolated soft mask features and the nested soft mask features. After the isolated/nested etching process is performed, the isolated soft mask features are substantially the same size as the nested soft mask features. During an isolated/nested etching process, another layer can be partially etched. Finally, a BARC/ARC open etching process can be performed in which the remaining BARC is removed between the isolated soft mask features and the nested soft mask features.
  • a Nested-Greater Control Strategy and its associated plans can be executed when an Isolated-CD value is less than the Nested-CD value.
  • the control plans can include at least one of an Isolated/nested control plan for controlling a trim process, an isolated/nested deposition process, and a BARC/ARC open etching process.
  • the isolated/nested process can include a deposition process when the Nested-CD value is greater than the Isolated-CD value.
  • an isolated/nested deposition process can be run using a chamber pressure approximately equal to 10 mT, an upper RF power approximately equal to 200 W, an lower RF power approximately equal to 100 W; a CHF 3 flow rate approximately equal to 200 sccm, the back side He pressure can be approximately equal to 3 Torr in the center region, the back side He pressure can be approximately equal to 3 Torr in the edge region, the top plate temperature can be approximately equal to 80° C., the chamber wall temperature can be approximately equal to 60° C., the wafer holder temperature can be approximately equal to 30° C., and the processing time can be approximately equal to 185 sec.
  • the CD change for a nested feature was measured to be approximately equal to +15 nm, and the CD change for isolated feature was measured to be approximately equal to +30 nm.
  • substantially the same amount of mask material can be trimmed (laterally etched) from the isolated soft mask features and the nested soft mask features.
  • unequal amounts can be deposited to the isolated soft mask features and the nested soft mask features, and other areas of the substrate can also be partially coated.
  • the deposition rate can be larger on the isolated features and after the deposition process is performed, the isolated soft mask (photoresist) feature size can be greater than or substantially equal to the nested soft mask (photoresist) feature size.
  • the remaining BARC can be removed between the isolated soft mask features and the nested soft mask features.
  • the size of the trimmed isolated mask features and the nested mask features can be larger than or substantially equal to the required CD.
  • the isolated hard mask features are substantially the same size as the nested hard mask features when a similar trimming procedure is performed.
  • DC plans and mapping applications associated with the control strategies can be executed.
  • Data collection plans and/or mapping applications can run before, during, and/or after control plans are executed.
  • Data collection plans can obtain data from processing elements such as a tool, a module, a chamber, and a sensor; measuring elements such as a OES system, ODP system, a SEM system, a TEM system, and a MES system.
  • DC plans can be used to provide data for mapping application that are associated with a control strategy.
  • the DC plan determines which data is collected, how the data is collected, and where the data is stored.
  • the controller can auto-generate data collection plans and/or maps for physical modules. Typically, one data collection plan can be active at a time for a specific module, and the controller can select and use a data collection plan that matches the wafer context.
  • Data can include trace data, process log information, recipe data, maintenance counter data, ODP data, OES data, Voltage/Current Probe (VIP) data, or analog data, or a combination of two or more thereof.
  • Measurement devices and/or sensors can be started and stopped by a DC plan.
  • a DC plan can also provide information for trimming data, clipping data, and dealing with spike data and outliers.
  • data can be analyzed, and alarm/fault conditions can be identified.
  • the analysis plans associated with an analysis strategy can also be executed.
  • judgment and/or intervention plans can be executed. For example, after the data has been collected, the data can be sent to a judgment and/or intervention plan for run-rule evaluation.
  • Fault limits can be calculated automatically based on historical data or entered manually based on the customer's experience or process knowledge, or obtained from a host computer. The data can be compared with the warning and control limits, and when a run-rule is violated, an alarm can be generated, indicating the process has exceeded statistical limits.
  • wafer data maps, process data maps, and/or module data maps can be analyzed, and alarm/fault conditions can be identified.
  • judgment and/or intervention plans are associated with mapping applications, they can be executed. For example, after a map has been created, the map can be analyzed using run-rule evaluation techniques. Fault limits can be calculated automatically based on historical maps or entered manually based on the customer's experience or process knowledge, or obtained from a host computer. The maps can be compared with the warning and control limits, and when a run-rule is violated, an alarm can be generated, indicating the process has exceeded statistical limits.
  • the controller can perform either notification or intervention. Notification can be via e-mail or by an e-mail activated pager. In addition, the controller can perform an intervention: either pausing the process at the end of the current lot, or pausing the process at the end of the current wafer.
  • the controller can identify the processing module that caused the alarm to be generated.
  • a strategy can include a data failure field that can be used to enter/edit the data failure action.
  • a data failure may occur when a mapping application fails or a map could not be completed.
  • the system response can be selected from among the following options: (a) Use Tool Process Recipe (Nominal Recipe)—the software sends the indication to the process tool and the process tool uses the tool process recipe; (b) Do Not Use Process Recipe (Null Recipe)—the software sends the null recipe information associated with the wafer to the process tool and the wafer goes in and out of the chamber without being processed; (c) PM Pause—pauses the process module or (d) System Pause—pauses the system including transfer system. Other options should be apparent to those skilled in the art. Results from analysis plans, judgment plans, and intervention plans can feed forward and/or feedback data to other plans, and the other plans can use this data to calculate their outputs.
  • Procedure 500 can end in 540 .
  • FIG. 6 illustrates an exemplary flow diagram of a method for operating a processing system in accordance with an embodiment of the invention.
  • Procedure 600 starts at task 605 .
  • a host system can download recipes and/or variable parameters to a processing tool, such as processing tool 110 ( FIG. 1 ).
  • a host system can determine wafer sequencing.
  • the downloaded data can include process recipes, metrology recipes, and wafer sequencing.
  • the controller 120 sends a message to the processing tool 110 indicating that the system recipe verification was successful. If the system recipe is verified, the lot can start with R2R control. If it is not verified, the lot cannot start with R2R control.
  • Pre-process data can include reference map(s), measurement map(s), prediction map(s), and/or confidence map(s) for an in-coming wafer and/or in-coming lot.
  • Pre-process data can include measurement data from a measurement module associated with a lithography system such as a Lithius® System from Tokyo Electron Limited and/or measurement data from an etching system such as a Telius® System from Tokyo Electron Limited.
  • a query can be performed to determine when to perform a pre-processing measurement process.
  • a pre-processing measurement process is not required.
  • the process results should be constant and the pre-processing measurement process should not be required for all wafers.
  • some wafers may be identified as process verification wafers and a pre-processing measurement process can be performed on these wafers.
  • the pre-processing measurement process can be performed on a larger number of wafers.
  • a pre-processing measurement process can be performed.
  • a control strategy can be executed and used to establish a pre-processing measurement process recipe.
  • the wafer can be sent to an IMM 140 ( FIG. 1 ) where the hard mask features of a patterned wafer can be measured before a trimming procedure is performed.
  • the features can include soft mask and/or hard mask features.
  • One or more data collection (DC) plans and/or mapping applications can be used.
  • a different metrology system can be used.
  • FIG. 7A shows a simplified view of a pre-processing measurement map 720 on a circular wafer 700 that includes a plurality of chip/dies 710 .
  • FIG. 7B shows a simplified view of a pre-processing measurement map 720 on a square substrate 750 that includes a plurality of chip/dies 710 .
  • one-hundred twenty-five chip/dies are shown, but this is not required for the invention.
  • a different number of chip/dies may be shown.
  • the shapes shown are for illustration purposes and are not required for the invention. For example, chip/dies may also have rectangular shapes.
  • the rows and columns are numbered from zero to twelve for illustration.
  • twelve chip/dies 730 are labeled ( 1 - 12 ), and these chip/dies can be used to define the location of the measurement sites for the illustrated pre-processing measurement plan 720 .
  • other pre-processing measurement plans and/or other measurement sites may be used.
  • a pre-processing measurement plan can be specified by a semiconductor manufacturer based on data stored in a historical database. For example, a semiconductor manufacturer may have historically chosen a number of positions on the wafer when making SEM measurements and would like to correlate the measured data from a integrated metrology tool to the data measured using a SEM tool. Other manufacturers can use TEM and/or Focused Ion Beam (FIB) data.
  • FIB Focused Ion Beam
  • measurement features, such as periodic gratings, on a pre-processed wafer can be measured at one or more of the twelve ( 1 - 12 ) locations shown in FIGS. 7A and 7B .
  • the features on a pre-processed wafer may be in a hard mask layer as shown in FIG. 4 .
  • the pre-processing measurement process can be time consuming and can affect the throughput of a processing system. During process runs, a manufacturer may wish to minimize the amount of time used to measure a wafer.
  • the pre-processing measurement plan can be context driven and different strategies and/or plans may be selected based on the context of the wafer. For example, one or more wafers may not be measured and/or the pre-processing measurement process may be performed using a subset of measurement sites included in the pre-processing measurement plan 720 .
  • one or more reference maps can be created and stored for later use.
  • a reference measurement map can include measured data at more sites than are shown in pre-processing measurement map 720 .
  • a reference measurement map can use the same set of measurement sites or a reference measurement map may not be required.
  • a reference prediction map can include predicted measured data at more sites than are shown in pre-processing measurement map 720 .
  • a reference prediction map can use the same set of measurement sites or a reference prediction map may not be required.
  • a reference confidence map can include confidence data at more sites than are shown in pre-processing measurement map 720 .
  • a reference confidence map can use the same set of measurement sites or a reference confidence map may not be required.
  • the measurement, prediction, and/or confidence maps can include one or more Goodness Of Fit (GOF) maps, one or more grating thickness maps, one or more Critical Dimension (CD) maps, one or more CD profile maps, one or more material thickness maps, one or more material cross section area maps, one or more trench cross section area maps, one or more sidewall angle maps, one or more differential width maps, or a combination thereof.
  • the pre-process data can also include site result data, site number data, CD measurement flag data, number of measurement sites data, coordinate X data, and coordinate Y data, among others.
  • FIG. 8 shows a simplified view of a pre-processing prediction map 800 including a plurality of chip/dies 810 , the previously discussed twelve measurement sites 830 numbered ( 1 - 12 ), and a reference side 840 that can indicate a notch location.
  • curve-fitting procedures can be performed to calculate data for the sites on the wafer that are not measured.
  • the prediction maps may be determined using surface estimating, surface fitting techniques, or other mathematical techniques.
  • a first pre-processing equation can be determined using the measured data from the sixth row (measurement sites 2, 3, and 11), and this first pre-processing equation can be used and/or modified to calculate the predicted values (expected measured data) for chip/dies (6-3, 6-4, 6-6, 6-7, 6-8, and 6-9), and the first pre-processing equation can be used and/or modified to extrapolate predicted values for chip/dies (6-0, 6-1, 6-11, and 6-12).
  • other measurement sites may be used to determine the first pre-processing equation.
  • the first pre-processing equation and/or a modified version can be used to calculate/predict values the chip/dies in row five and row seven.
  • the first pre-processing equation can be modified as necessary to fit the measured data in row five (measurement site 9) and in row seven (measurement site 8).
  • An error condition can be declared when the first pre-processing equation cannot be determined and/or modified properly.
  • an error condition can be declared when one or more of the measured values and/or calculated/predicted values are outside a uniformity limit established for the wafer.
  • the first pre-processing equation and/or a modified version can also be used to calculate/predict values for the remaining sites on the wafer.
  • the entire first pre-processing prediction map can be calculated using the first pre-processing equation and/or a modified version.
  • An error condition can be declared when one or more of the values calculated and/or predicted values are outside a uniformity limit established for the wafer.
  • the first pre-processing equation and/or a modified version may be used to calculate/predict values for a portion of the wafer.
  • the portion may include one or more quadrants.
  • a second pre-processing equation can also be determined using the measured data from the seventh column (measurement sites 7, 8, 9, and 10), and this second equation can be used and/or modified to calculate the predicted values (expected measured data) for chip/dies (3-7, 4-7, 6-7. 8-7, 9-7, and 10-7), and the second pre-processing equation can be used and/or modified to extrapolate predicted values for chip/dies (0-7, 1-7, and 12-7).
  • other measurement sites may be used to determine the second pre-processing equation.
  • the second pre-processing equation and/or a modified version can be used to calculate/predict values for the chip/dies in column five and column six.
  • the second pre-processing equation can be modified as necessary to better fit the measured data in column six (measurement sites 5, and 6) and in column five (measurement sites 4 and 3).
  • An error condition can be declared when the second pre-processing equation cannot be determined and/or modified properly.
  • an error condition can be declared when one or more of the measured values and/or calculated/predicted values are outside a uniformity limit established for the wafer.
  • the second pre-processing equation and/or a modified version can also be used to calculate/predict values for the remaining sites on the wafer.
  • the entire second pre-processing prediction map can be calculated using the second pre-processing equation and/or a modified version.
  • An error condition can be declared when one or more of the values calculated and/or predicted values are outside a uniformity limit established for the wafer.
  • the second pre-processing equation and/or a modified version may be used to calculate/predict values for a portion of the wafer.
  • the portion may include one or more quadrants.
  • the first pre-processing prediction map can be calculated using only the first pre-processing equation and/or the second prediction pre-processing map can be calculated using only the second pre-processing equation.
  • a procedure such as this could be used to reduce the processing time for substantially uniform processes.
  • FIG. 9 shows a simplified view of a confidence map 920 including a plurality of chip/dies 910 , the previously discussed twelve measurement sites 930 labeled as ( 1 - 12 ), and a reference side 940 that can indicate a notch location on a wafer or a specific side of a substrate.
  • a pre-processing confidence map can be calculated using the differences between the first pre-processing prediction map and the second pre-processing prediction map.
  • a pre-processing confidence map may be calculated using the differences between a pre-processing prediction map and a reference measurement map.
  • a confidence map can be divided into different areas as shown using the values “C1” and “C2” and different values and/or rules can be established for the different areas. For example, two areas can be used to account for differences between a center region and an edge region. Alternatively, a different number of areas may be used.
  • a pre-processing confidence map can be calculated using the differences between a pre-processing prediction map and the uniformity limits established for the wafer. For example, when a value in a prediction map is close to uniformity limit, the confidence value may be lower than when the value in a prediction map is not close to uniformity limit.
  • process results maps and/or confidence maps for one or more processes may be used to calculate a confidence map for measured data.
  • a query can be performed to determine when to establish a prioritized site based on the pre-processing data. When the values in all areas of the confidence map are high, it is not necessary to establish a new prioritized site. In other embodiments, when the differences between the prediction maps are small and/or when the differences between the pre-processing prediction map and a reference measurement map are small, it is not necessary to establish a new prioritized site.
  • a new measurement plan may be establish that uses a smaller number of measurement sites and that decreases the throughput time.
  • one or more new prioritized sites can be established in those areas.
  • one or more new prioritized sites can be established when the differences between the prediction maps are large and/or when the differences between the pre-processing prediction map and a reference measurement map are large. For example, prioritized sites can be established for the entire wafer or for a particular area such as a particular quadrant (Q1, Q2, Q3, or Q4).
  • procedure 600 can branch to task 640 , and when a prioritized site is not required, procedure 600 can branch to task 645 .
  • FIG. 10 shows a simplified view of a new pre-processing measurement map 1020 including a plurality of chip/dies 1010 , a new pre-processing measurement site 1035 , the previously discussed twelve measurement sites 1030 labeled as ( 1 - 12 ), and a reference side 1040 that can indicate a notch location on a wafer or a specific side of a substrate.
  • a new pre-processing measurement map may include a plurality of prioritized sites at different locations on the wafer.
  • Q1 chip/site (3-2) may be identified as the prioritized site and the metrology tool is instructed to make measurements at the site.
  • the pre-processing confidence map can be a measure of the confidence in the calculated pre-processing predicted values and can also be a measure of the confidence in the measured pre-processing data and pre-processing predicted data being within the required specifications.
  • a new pre-processing metrology recipe can be created, and the new recipe can be used to instruct the metrology tool to make additional pre-processing measurements at the one or more prioritized sites.
  • the new pre-processing prioritized site can be selected from a set of previously defined sites. For example, during a setup and/or verification procedure, measurements may have been made at more than forty sites, and one or more of these sites can be used. Alternatively, the new pre-processing prioritized site may not be selected from a set of previously defined sites.
  • the additional measurements at newly established prioritized sites can be performed with the minimum amount of delay.
  • the new recipe can be used later, and the additional measurements at the prioritized sites can be performed after some delay time.
  • the measured data for a prioritized site when the measured data for a prioritized site is created, it can be compared to the data in the pre-processing prediction maps. Alternatively, when the measured data for a prioritized site is created, it can be stored and compared to the data in the pre-processing prediction maps at a later time.
  • An error condition can be declared when the measured data for a prioritized site is outside a limit established by a wafer uniformity specification.
  • That prediction map can be used in the area around the prioritized site. For example, when the one or more prioritized sites are in the first quadrant and the measured value(s) are close to the value(s) in the first pre-processing prediction map, then the first pre-processing prediction map can be used in the first quadrant.
  • a new prediction map can be created and can be used in the area around the prioritized site. For example, when the one or more prioritized sites are in the first quadrant and the measured value(s) are not close to the value(s) in the pre-processing prediction maps, then a new pre-processing prediction map can be created and used in the first quadrant.
  • a new confidence map or a new portion of a confidence map can be calculated.
  • the wafer can be processed if the confidence map is within the required limits.
  • one or more trimming and/or etching and/or ashing procedures can be performed to produce a patterned polysilicon layer on a wafer and an these procedures can be performed as shown in FIG. 4 .
  • a different procedure may be performed.
  • one or more process recipes and one or more sets of control settings can be calculated.
  • process recipes can be tuned for changes occurring in a radial direction
  • process recipes can be tuned for changes occurring in a lateral direction.
  • a lateral trimming process can be performed to change the size and/or shape of a hard mask feature.
  • a hard mask layer may include TEOS material.
  • the processing system 100 FIG. 1
  • COR Chemical Oxide Reduction
  • Methods and systems for performing a COR process are taught in co-pending U.S. patent application Ser. No. 10/736,983, entitled “Method of Operating a System For Chemical Oxide Removal” by Tomoyasu, et al., filed on Dec. 17, 2003, and U.S. patent application Ser. No. 10/705,201, entitled “Processing System and Method For Treating a Substrate” by Hamelin, et al., filed on Nov. 12, 2003, and both are incorporated by reference herein.
  • the hard mask features can be used to etch features into the gate material layer.
  • the gate material can include doped and/or undoped polysilicon material.
  • a cleaning process can be performed to remove the remaining portion of the hard mask layer. For example, an ashing process and/or wet cleaning process may be performed.
  • a measurement procedure can be performed after the cleaning process is performed. Alternatively, a measurement procedure may be performed before the cleaning process is performed.
  • FIG. 11 illustrates an exemplary trimming process in accordance with an embodiment of the invention.
  • a hard mask feature 1005 is shown on a wafer 1100 and the remaining portion of an upper layer 1130 is shown on the top of the feature.
  • an upper layer 1130 is not present.
  • a measured CD 1110 , measured sidewall angle 1135 , a target CD 1120 , and a target sidewall angle 1125 are shown.
  • the desired process results can include a trim amount 1140 that can be the difference between the measured CD 1110 and the target CD 1120 , and a sidewall angle adjustment that can be the difference between the measured sidewall angle 1135 and the target sidewall angle 1125 .
  • the trim occurs on both surfaces on the structure at the same time. Because of this, the trim amount is twice the amount on a blanket wafer.
  • a previously calculated prediction map is used as the measured data map.
  • a modified prediction map may be used.
  • FIG. 12 shows a simplified view of a process results map in accordance with the invention.
  • FIG. 12 shows a simplified view of a process results map 1220 including a plurality of chip/dies 1210 , the previously discussed twelve measurement sites 1230 labeled as ( 1 - 12 ), and a reference side 1240 that can indicate a notch location on a wafer or a specific side of a substrate.
  • a process results map can be determined using a measurement map and/or a process map.
  • a process results map may be determined using process models.
  • process results map can be divided into different areas as shown using the values “PR1” and “PR2” and different values and/or rules can be established for the different areas.
  • a different number of areas may be used.
  • the first group of sites “PR1” may have a first set of process results associated with them
  • the second group of sites “PR2” may have a second set of process results associated with them.
  • Two groups are not required for the invention, but they are shown for illustration purposes. Alternatively, a different number of groups may be used. For example, when a substantially uniform set of process results is expected, a single group may be used, and a two group technique may be used to account for center region and an edge region differences. In addition, a two zone technique can be used to simplify the calculation process or can be used whenever different process results and/or different measurement results are expected to occur for a center region and an edge region.
  • one or more process result maps can be used.
  • An etch process map can be used to characterize the amount of vertical etching
  • a sidewall angle adjustment map can be used to characterize the amount of sidewall angle change
  • tolerance values associated with the maps can be used to identify allowable variations in one or more process results.
  • a trim process map can be used to characterize the amount of lateral etching
  • a sidewall angle adjustment map can be used to characterize the amount of sidewall angle change
  • tolerance values associated with the maps can be used to identify allowable variations in one or more data items.
  • process confidence maps can be used to establish risk factor for one or more processes in a process sequence. For example, process confidence maps may vary with time and may vary in response to chamber cleaning procedures.
  • a control strategy can include one or more maps and/or prediction equations that can be created to model the process space.
  • y(rp) can be equal to a desired process result at a radial position (r) on the wafer.
  • y(rp) can be a desired process result such as “Trim Amount” [TA(rp)]
  • x(rp) can be equal to a process parameter (Control Variable) that has been related to y(rp).
  • one or more prediction and/or modeling equations can be determined by creating a polynomial and finding the coefficients of the polynomial that relates a process gas flow rate to a trim amount in a first part of the process space.
  • DV(rp) is a dynamic variable that can vary with radial position (rp)
  • PR(rp) is a required process result that can vary with radial position (rp)
  • N> 1
  • a n can comprise a constant having at least one of a positive value, a negative value, and a zero value.
  • the N th order polynomial can be solved to determine a value for DV(rp).
  • an inverse equation can be determined by creating a different polynomial and finding the coefficients of the different polynomial that can relate process variable (gas flow rate) to a process result (trim amount) in different parts of the inverse process space.
  • DV(rp) is a dynamic variable that can vary with radial position (rp)
  • PR(rp) is a required process result, such as trim amount, that can vary with radial position (rp)
  • N> 1
  • C m can comprise a constant having at least one of a positive value, a negative value, and a zero value.
  • the controller can create a list of terms for these types of equations and/or models, and the controller can manipulate one or more of the terms.
  • the terms can be defined by the controller and can be assigned to at least one step in the process. Alternately, a Recipe Parameter Map can be created in which each term is assigned a parameter's value.
  • a query can be performed to determine when to perform a post-processing measurement process.
  • the process results should be constant and the post-processing measurement process should not be required for every wafer.
  • some wafers may be identified as process verification wafers and a post-processing measurement process can be performed on these wafers.
  • the post-processing measurement process can be performed.
  • procedure 600 can branch to task 685 , and when post-processing measurement process is required, procedure 600 can branch to task 655 .
  • a control strategy can be executed and used to establish the post-processing measurement process recipe.
  • the wafer can be sent to an IMM 140 ( FIG. 1 ) where the features of a patterned wafer can be measured after an etching process has been performed on the gate material.
  • a different metrology system can be used. For example, a TEM and/or SEM measurements may be made.
  • FIG. 13A shows a simplified view of a post-processing measurement map 1320 on a circular wafer 1300 that includes a plurality of chip/dies 1310 .
  • FIG. 13B shows a simplified view of a post-processing measurement map 1320 on a square substrate 1350 that includes a plurality of chip/dies 1310 .
  • one-hundred twenty-five chip/dies are shown, but this is not required for the invention.
  • a different number of chip/dies may be shown.
  • the shapes shown are for illustration purposes and are not required for the invention.
  • chip/dies may also have rectangular shapes.
  • the rows and columns are numbered from zero to twelve for illustration.
  • twelve chip/dies 1330 are labeled ( 1 - 12 ), and these chip/dies can be used to define the location of the measurement sites for the illustrated post-processing measurement plan 1320 .
  • other post-processing measurement plans and/or other measurement sites may be used.
  • a post-processing measurement plan 1320 can be specified by a semiconductor manufacturer based on data stored in a historical database. For example, a semiconductor manufacturer may have historically chosen a number of positions on the wafer when making SEM measurements and would like to correlate the measured data from a integrated metrology tool to the data measured using a SEM tool. Other manufacturers can use FIB data.
  • the features on a post-processed wafer can be measured at one or more of the twelve ( 1 - 12 ) locations shown in FIGS. 13A and 13B .
  • the features on a post-processed wafer may be as shown in FIG. 4 .
  • the post-processing measurement maps can include one or more Goodness Of Fit (GOF) maps, one or more grating thickness maps, one or more Critical Dimension (CD) maps, one or more CD profile maps, one or more material thickness maps, one or more material cross section area maps, one or more trench cross section area maps, one or more sidewall angle maps, or one or more differential width maps, or a combination thereof.
  • the post-process data can also include site result data, site number data, CD measurement flag data, number of measurement sites data, coordinate X data, and coordinate Y data, among others.
  • FIG. 14 shows a simplified view of a post-processing prediction map 1420 including a plurality of chip/dies 1410 , the previously discussed twelve measurement sites 1430 numbered ( 1 - 12 ), and a reference side 1440 that can indicate a notch location.
  • curve-fitting procedures can be performed to calculate data for the sites on the wafer that are not measured.
  • the prediction maps may be determined using surface estimating, surface fitting techniques, or other mathematical techniques.
  • a first post-processing equation can be determined using the measured data from the sixth row (measurement sites 2, 3, and 11), and this first post-processing equation can be used and/or modified to calculate the expected post-processing measured data for chip/dies (6-3, 6-4, 6-6, 6-7, 6-8, and 6-9), and the first post-processing equation can be used and/or modified to extrapolate predicted values for the expected post-processing measured data for chip/dies (6-0, 6-1, 6-11, and 6-12).
  • other measurement sites may be used to determine the first pre-processing equation.
  • the first post-processing equation and/or a modified version can be used to calculate/predict post-processing values for the chip/dies in row five and row seven.
  • the first post-processing equation can be modified as necessary to fit the post-processing measured data in row five (measurement site 9) and in row seven (measurement site 8).
  • An error condition can be declared when the first post-processing equation cannot be determined and/or modified properly.
  • an error condition can be declared when one or more of the measured values and/or calculated/predicted values are outside a uniformity limit established for the wafer.
  • the first post-processing equation and/or a modified version can also be used to calculate/predict values for the remaining sites on the wafer.
  • the entire first post-processing prediction map can be calculated using the first post-processing equation and/or a modified version.
  • An error condition can be declared when one or more of the values calculated and/or predicted values are outside a uniformity limit established for the wafer.
  • the first post-processing equation and/or a modified version may be used to calculate/predict values for a portion of the wafer.
  • the portion may include one or more quadrants.
  • a second post-processing equation can also be determined using the post-processing measured data from the seventh column (measurement sites 7, 8, 9, and 10), and this second post-processing equation can be used and/or modified to calculate the expected post-processing measured data for chip/dies (3-7, 4-7, 6-7. 8-7, 9-7, and 10-7), and the second post-processing equation can be used and/or modified to extrapolate values for the expected post-processing measured data for chip/dies (0-7, 1-7, and 12-7).
  • other measurement sites may be used to determine the second post-processing equation.
  • the second post-processing equation and/or a modified version can be used to calculate/predict values for the chip/dies in column five and column six.
  • the second post-processing equation can be modified as necessary to better fit the measured data in column six (measurement sites 5, and 6) and in column five (measurement sites 4, and 3).
  • An error condition can be declared when the second post-processing equation cannot be determined and/or modified properly.
  • an error condition can be declared when one or more of the measured values and/or calculated/predicted values are outside a uniformity limit established for the wafer.
  • the second post-processing equation and/or a modified version can also be used to calculate/predict values for the remaining sites on the wafer.
  • the entire second post-processing prediction map can be calculated using the second post-processing equation and/or a modified version.
  • An error condition can be declared when one or more of the values calculated and/or predicted values are outside a uniformity limit established for the wafer.
  • the second post-processing equation and/or a modified version may be used to calculate/predict values for a portion of the wafer.
  • the portion may include one or more quadrants.
  • the first post-processing prediction map can be calculated using only the first pre-processing equation and/or the second prediction post-processing map can be calculated using only the second post-processing equation.
  • a procedure such as this could be used to reduce the processing time for substantially uniform processes.
  • FIG. 15 shows a simplified view of a post-processing confidence map 1520 including a plurality of chip/dies 1510 , the previously discussed twelve measurement sites 1530 numbered ( 1 - 12 ), and a reference side 1540 that can indicate a notch location.
  • a post-processing confidence map can be calculated using the differences between the first post-processing prediction map and the second post-processing prediction map.
  • a post-processing confidence map may be calculated using the differences between a post-processing prediction map and a reference measurement map.
  • a confidence map can be divided into different areas as shown using the values “C1” and “C2” and different values and/or rules can be established for the different areas. For example, two areas can be used to account for differences between a center region and an edge region. Alternatively, a different number of areas may be used.
  • a post-processing confidence map can be calculated using the differences between a post-processing prediction map and the uniformity limits established for the wafer. For example, when a value in a prediction map is close to uniformity limit, the confidence value may be lower than when the value in a prediction map is not close to uniformity limit.
  • a first kind of post-processing confidence map provides an estimate of the confidence in the measured data, in other words, whether the predicted measured data is correct. Since it would take too long to measure the entire wafer, a smaller number of measurement sites is being used and confidence factors must be establish to ensure that the predicted measured data accurately represents the data that would be obtained if more sites or a larger portion of the wafer was used to make the measurements.
  • a second kind of post-processing confidence map can provide an estimate of the confidence in the trimming process.
  • the actual measured data and/or the predicted measured data can be compared to the expected target values and when these numbers are with specified limits, the semiconductor manufacturer can assume that the process was performed correctly even though the entire wafer has not been measured.
  • a query can be performed to determine when to establish a prioritized site based on the post-processed data. When the values in all areas of the post-processing confidence map are high, it is not necessary to establish a new prioritized site. In other embodiments, when the differences between the prediction maps are small and/or when the differences between the post-processing prediction map and a reference measurement map are small, it is not necessary to establish a new prioritized site.
  • a new measurement plan may be establish that uses a smaller number of measurement sites and that decreases the through-put time.
  • one or more new prioritized sites can be established in those areas.
  • one or more new prioritized sites can be established. For example, prioritized sites can be established for the entire wafer or for a particular area such as a particular quadrant (Q1, Q2, Q3, or Q4).
  • procedure 600 can branch to task 675 , and when a post-processing prioritized site is not required, procedure 600 can branch to task 680 .
  • FIG. 16 shows a simplified view of a new post-processing measurement map 1620 including a plurality of chip/dies 1610 , a new post-processing measurement site 1635 , the previously discussed twelve measurement sites 1630 labeled as ( 1 - 12 ), and a reference side 1640 that can indicate a notch location on a wafer or a specific side of a substrate.
  • a new post-processing measurement map may include a plurality of prioritized sites at different locations on the wafer.
  • confidence values are low in one area of the wafer
  • one or more prioritized sites can be established in that area as post-processing measurement sites. For example, when to confidence values are low in the first quadrant (Q1) chip/site (3-2) may be identified as the prioritized site and the metrology tool is instructed to make measurements at the site.
  • a new post-processing metrology recipe can be created, and the new recipe can be used to instruct the metrology tool to make additional post-processing measurements at the one or more prioritized sites.
  • the post-processing confidence map is calculated while the wafer is in the metrology tool, the additional measurements at newly established prioritized sites can be performed with the minimum amount of delay.
  • the new recipe can be used at a later time, and the additional measurements at the prioritized sites can be performed after some delay time.
  • the measured data for a prioritized site when the measured data for a prioritized site is created, it can be compared to the data in the post-processing prediction maps. Alternatively, when the measured data for a prioritized site is created, it can be stored and compared to the data in the post-processing prediction maps at a later time.
  • An error condition can be declared when the measured data for a prioritized site is outside a limit established by a wafer uniformity specification.
  • That prediction map can be used in the area around the prioritized site. For example, when the one or more prioritized sites are in the first quadrant and the measured value(s) are close to the value(s) in the first post-processing prediction map, then the first post-processing prediction map can be used in the first quadrant.
  • a new prediction map can be created and can be used in the area around the prioritized site. For example, when the one or more prioritized sites are in the first quadrant and the measured value(s) are not close to the value(s) in the pre-processing prediction maps, then a new pre-processing prediction map can be created and used in the first quadrant.
  • a new post-processing confidence map or a new portion of a post-processing confidence map can be calculated.
  • the new measurement recipe can be used at a later time to instruct the metrology tool to make measurements at the one or more prioritized sites.
  • the new measurement recipe can be used to measure the next wafer or some other wafer.
  • the current wafer can be moved into a metrology tool, and the new post-processing measurement recipe can be used to re-measure it.
  • a new post-processing confidence map or a new portion of a post-processing confidence map can be calculated.
  • an averaged post-processing prediction map may be calculated.
  • the averaged post-processing predicted map can be calculated for the entire wafer or for a particular area such as a particular quadrant (Q1, Q2, Q3, or Q4).
  • a query can be performed to determine when to perform another post-processing measurement process.
  • the process results should be constant and the post-processing measurement process should not be required.
  • some wafers may be identified as process verification wafers and a post-processing measurement process can be performed on these wafers.
  • the post-processing measurement process can be performed.
  • procedure 600 can branch to task 685 , and when post-processing measurement process is required, procedure 600 can branch to task 655 .
  • a post-processing measurement process can be performed at the one or more prioritized sites.
  • a previously calculated prediction map is used as the measured data map.
  • a modified prediction map may be used.
  • a query can be performed to determine when an additional wafer requires processing.
  • a process is performed, a number of wafers can be processed as a lot or a batch.
  • procedure 600 can branch to task 690 , and when an additional wafer requires processing, procedure 600 can branch to task 610 .
  • Procedure 600 can end in 690 .
  • a Tunable Etch Resistance ARC (TERA) material may be used as a BARC material and/or an ARC material and/or a hard mask material, and the gate material may include GaAs, SiGe, and strained silicon.
  • FIGS. 17A-17C illustrate different processing methods for performing dynamic sampling in accordance with embodiments of the invention.
  • the application that computes the wafer measurement recipe settings can be implemented with three different methods: the first method uses the Measurement Analysis System (Timbre® PAS), the second method uses the Tool Process Control System (Telius®/lngenio®), and the third method uses the Factory Host.
  • Timbre® PAS Measurement Analysis System
  • Telius®/lngenio® Tool Process Control System
  • Factory Host the Factory Host.
  • one or more of the dynamic sampling applications can be performed by a PAS controller in the Measurement Analysis System.
  • a recipe list can be sent to IM with wafer context and a PJ Start command can be used.
  • the IM can send wafer context to a PAS controller and an optional wafer map may be included.
  • the PAS controller can evoke one or more Dynamic Sampling (DS) applications.
  • DS Dynamic Sampling
  • a DS application can be used to compute the wafer map site location adjustments.
  • the PAS controller can send a variable adjust message to IM.
  • the IM can make the measurements with modified recipe.
  • one or more of the dynamic sampling applications can be performed by a controller in a Advanced Process Control (APC) System.
  • APC Advanced Process Control
  • a recipe list can be sent to IM with wafer context and a PJ Start command can be used.
  • the tool can send wafer context to an APC controller and an optional wafer map may be included.
  • the APC controller can evoke one or more DS applications.
  • a DS application can be used to compute the wafer map site location adjustments.
  • the tool controller can receive a variable adjust message from the APC controller.
  • the tool controller can send a variable adjust message to IM.
  • the IM can make the measurements with modified recipe.
  • one or more of the dynamic sampling applications can be performed by a controller in a Host System.
  • a recipe list can be sent to the IM with wafer context and a PJ Start command can be used.
  • the tool can send wafer context to a Host controller and an optional wafer map may be included.
  • the Host controller can evoke one or more DS applications.
  • a DS application can be used to compute the wafer map site location adjustments.
  • the Host controller can send a variable adjust message to the processing tool.
  • the tool controller can send a variable adjust message to the IM.
  • the IM can make the measurements with modified recipe.
  • the controller 120 can use the difference between the measurement maps for the incoming material (input state) and process results maps (desired state) to predict, select, or calculate a set of process parameters to achieve the desired result of changing the state of the wafer from the input state to the desired state.
  • this predicted set of process parameters can be a first estimate of a recipe to use to provide a uniform process.
  • measurement maps and/or process results maps can be obtained from the MES 130 and can be used to update the first estimate.
  • the controller 120 can compute a predicted state map for the wafer based on one or more input state maps, one or more processing module characteristics maps, and one or more process models. For example, a trim rate map can be used along with a processing time to compute a predicted trim amount map. Alternately, an etch rate map can be used along with a processing time to compute an etch depth map, and a deposition rate map can be used along with a processing time to compute a deposition thickness map.
  • the controller 120 can use the post-processing measurement maps and/or data to compute a first set of process deviations. This computed set of process deviations can be determined based on one or more desired process results maps and the actual process results map determined from one or more of the post-processing measurement maps. In one case, the controller 120 obtains the required maps, and the controller 120 determines the differences between the desired state and the actual state using one or more maps. In this manner, one or more measured actual process results maps can be compared with one or more desired process results maps in order to determine a correction to the process recipe.
  • the “results” maps can include top CD maps, bottom CD maps, sidewall angle maps, and corrections can be made to the process recipes for the trim processes, the BARC open etching processes, and/or the isolated/nested etching processes.
  • the controller 120 can obtain one or more predicted state maps and one or more output state maps for the wafer, and the controller 120 determines the differences between the predicted state maps and the output state maps. In this manner, a measured actual process result map can be compared with a predicted process result map in order to determine corrections to one or more process model and/or maps.
  • the “results” maps can include top CD maps, bottom CD maps, sidewall angle maps, and corrections can be made to the process models for the trim processes, the BARC/ARC open etching processes, and/or the isolated/nested etching processes.
  • Maps can be updated using feed-back data that can be generated by running monitor, test, and/or production wafers, varying the process settings and observing the results, then updating one or more different maps. For example a map update can take place every N processing hours by measuring the before and after characteristics of a monitor wafer. By changing the settings over time to check different operating regions, the complete operating space can be validated over time, or run several monitor wafers at once with different recipe settings.
  • the map update can take place within the controller 120 , at the processing tool, or at the factory, allowing the factory to control and/or manage the monitor wafers and map updates.
  • the controller 120 can update maps at one or more points in a processing sequence.
  • the controller 120 can use the feed-forward information, modeling information, and the feedback information to determine whether or not to change one or more of the currently used maps before running the current wafer, before running the next wafer, or before running the next lot.
  • a required process result map can be used.
  • the required process result map can comprise the difference between the desired process result map and the actual measured data map.
  • Desired process result data such as target data, can be compared to measured data.
  • the desired process result map can comprise at least one of a desired trench area map, a desired material thickness map, a desired sidewall angle map, a desired grating thickness map, a desired cross sectional area map, a desired CD width map, a desired CD depth map, a desired feature profile map, a desired trim amount map, a desired differential depth map, a desired uniformity map, and a desired differential width map.
  • maps may be either externally generated or internally generated.
  • the externally generated map can be provided by the MES 130 .
  • the internally generated map can be created using calculated values and/or an input from a GUI.
  • business rules can be provided that can be used to determine when to use an externally generated map or an internally generated map. Maps must be evaluated and pre-qualified before they can be used.

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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CN200780011392XA CN101410844B (zh) 2006-03-28 2007-01-24 用晶片均匀性控制进行动态计量采样
JP2009503101A JP5028473B2 (ja) 2006-03-28 2007-01-24 ウェハ均一性制御を用いた動的サンプリング測定法
PCT/US2007/060953 WO2007117737A2 (en) 2006-03-28 2007-01-24 Dynamic metrology sampling with wafer uniformity control
TW096110397A TWI393169B (zh) 2006-03-28 2007-03-26 施行晶圓均勻度控制之動態量測取樣

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JP5028473B2 (ja) 2012-09-19
KR101311640B1 (ko) 2013-09-25
TW200741810A (en) 2007-11-01
CN101410844B (zh) 2011-08-03
KR20080111105A (ko) 2008-12-22
JP2009531866A (ja) 2009-09-03
CN101410844A (zh) 2009-04-15
TWI393169B (zh) 2013-04-11
WO2007117737A3 (en) 2008-04-17

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