JP5028473B2 - ウェハ均一性制御を用いた動的サンプリング測定法 - Google Patents

ウェハ均一性制御を用いた動的サンプリング測定法 Download PDF

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JP5028473B2
JP5028473B2 JP2009503101A JP2009503101A JP5028473B2 JP 5028473 B2 JP5028473 B2 JP 5028473B2 JP 2009503101 A JP2009503101 A JP 2009503101A JP 2009503101 A JP2009503101 A JP 2009503101A JP 5028473 B2 JP5028473 B2 JP 5028473B2
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processing
measurement
wafer
map
post
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JP2009531866A5 (https=
JP2009531866A (ja
Inventor
ファンク，メリット
サンダララジャン，ラドハ
プレイジャー，ダニエル
ナッツェル，ウィーズリー
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2009503101A 2006-03-28 2007-01-24 ウェハ均一性制御を用いた動的サンプリング測定法 Expired - Fee Related JP5028473B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/390,415 2006-03-28
US11/390,415 US20070238201A1 (en) 2006-03-28 2006-03-28 Dynamic metrology sampling with wafer uniformity control
PCT/US2007/060953 WO2007117737A2 (en) 2006-03-28 2007-01-24 Dynamic metrology sampling with wafer uniformity control

Publications (3)

Publication Number Publication Date
JP2009531866A JP2009531866A (ja) 2009-09-03
JP2009531866A5 JP2009531866A5 (https=) 2012-04-05
JP5028473B2 true JP5028473B2 (ja) 2012-09-19

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JP2009503101A Expired - Fee Related JP5028473B2 (ja) 2006-03-28 2007-01-24 ウェハ均一性制御を用いた動的サンプリング測定法

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Country Link
US (1) US20070238201A1 (https=)
JP (1) JP5028473B2 (https=)
KR (1) KR101311640B1 (https=)
CN (1) CN101410844B (https=)
TW (1) TWI393169B (https=)
WO (1) WO2007117737A2 (https=)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005030586A1 (de) * 2005-06-30 2007-01-11 Advanced Micro Devices, Inc., Sunnyvale Verfahren und System für eine fortschrittliche Prozesssteuerung unter Anwendung der Messunsicherheit als Steuerungseingang
DE102005046972A1 (de) * 2005-09-30 2007-04-05 Advanced Micro Devices, Inc., Sunnyvale Verfahren und System für eine fortschrittliche Prozesssteuerung unter Anwendung einer Kombination aus gewichteten relativen Voreinstellungswerten
US7631286B2 (en) * 2005-12-30 2009-12-08 Wafertech Llc Automated metrology recipe generation
US7539552B2 (en) * 2006-10-09 2009-05-26 Advanced Micro Devices, Inc. Method and apparatus for implementing a universal coordinate system for metrology data
US7738986B2 (en) * 2006-10-09 2010-06-15 GlobalFoundries, Inc. Method and apparatus for compensating metrology data for site bias prior to filtering
US8699027B2 (en) * 2007-07-27 2014-04-15 Rudolph Technologies, Inc. Multiple measurement techniques including focused beam scatterometry for characterization of samples
US8271122B2 (en) 2008-03-07 2012-09-18 Mks Instruments, Inc. Process control using process data and yield data
US7622308B2 (en) * 2008-03-07 2009-11-24 Mks Instruments, Inc. Process control using process data and yield data
JP5761947B2 (ja) 2010-09-02 2015-08-12 キヤノン株式会社 半導体集積回路装置
CN102809901A (zh) * 2011-05-31 2012-12-05 无锡华润上华半导体有限公司 一种对不同曝光设备各层次的焦距的匹配方法
TWI577523B (zh) * 2011-06-17 2017-04-11 三菱麗陽股份有限公司 表面具有凹凸結構的模具、光學物品、其製造方法、面發光體用透明基材及面發光體
TWI641921B (zh) * 2011-08-01 2018-11-21 Nova Measuring Instruments Ltd. 用以檢驗圖案化結構量測的監測系統及方法
WO2013133974A1 (en) * 2012-03-08 2013-09-12 Applied Materials, Inc. Fitting of optical model to measured spectrum
JP5992706B2 (ja) * 2012-03-26 2016-09-14 東京エレクトロン株式会社 半導体製造装置の障害監視システム及び障害監視方法
US9430593B2 (en) * 2012-10-11 2016-08-30 Kla-Tencor Corporation System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking
TWI649572B (zh) * 2012-11-09 2019-02-01 美商克萊譚克公司 用於計量目標之特性化之方法、計量系統及用於計量系統之視覺使用者介面
US9146551B2 (en) * 2012-11-29 2015-09-29 Asm Ip Holding B.V. Scheduler for processing system
JP6239294B2 (ja) * 2013-07-18 2017-11-29 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法
US9490182B2 (en) 2013-12-23 2016-11-08 Kla-Tencor Corporation Measurement of multiple patterning parameters
KR101890227B1 (ko) * 2014-01-24 2018-08-22 에이에스엠엘 네델란즈 비.브이. 기판 상에서 측정 작업을 수행하도록 작동가능한 장치, 리소그래피 장치, 및 기판 상에서 측정 작업을 수행하는 방법
EP2958010A1 (en) * 2014-06-20 2015-12-23 Thomson Licensing Apparatus and method for controlling the apparatus by a user
US9541906B2 (en) * 2014-09-11 2017-01-10 Hong-Te SU Controller capable of achieving multi-variable controls through single-variable control unit
US10152678B2 (en) * 2014-11-19 2018-12-11 Kla-Tencor Corporation System, method and computer program product for combining raw data from multiple metrology tools
US9995692B2 (en) * 2015-02-18 2018-06-12 GlobalFoundries, Inc. Systems and methods of controlling a manufacturing process for a microelectronic component
JP2017091126A (ja) * 2015-11-09 2017-05-25 アズビル株式会社 調節計
JP7041832B2 (ja) * 2017-12-08 2022-03-25 株式会社ナビタイムジャパン 情報処理システム、情報処理プログラム、情報処理装置および情報処理方法
WO2020150983A1 (en) * 2019-01-25 2020-07-30 Yangtze Memory Technologies Co., Ltd. Methods for forming hole structure in semiconductor device
KR102429079B1 (ko) 2019-12-23 2022-08-03 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리에 이용하는 파장 선택 방법
JP7408421B2 (ja) * 2020-01-30 2024-01-05 株式会社Ｓｃｒｅｅｎホールディングス 処理条件特定方法、基板処理方法、基板製品製造方法、コンピュータープログラム、記憶媒体、処理条件特定装置、及び、基板処理装置
KR102427207B1 (ko) 2020-10-14 2022-08-01 (주)아프로시스 Gis 기반 스파샬 웨이퍼 맵 생성 방법, 이를 이용한 웨이퍼 테스트 결과 제공 방법
US11688717B2 (en) * 2021-08-26 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanical wafer alignment detection for bonding process
TWI809913B (zh) * 2022-01-26 2023-07-21 南亞科技股份有限公司 臨界尺寸的測量方法
US12117733B2 (en) 2022-01-26 2024-10-15 Nanya Technology Corporation Method for measuring critical dimension
US12130559B2 (en) 2022-01-26 2024-10-29 Nanya Technology Corporation Method for measuring critical dimension
US12265379B2 (en) * 2022-05-05 2025-04-01 Applied Materials, Inc. Methods and mechanisms for adjusting film deposition parameters during substrate manufacturing
CN119126697A (zh) * 2024-08-09 2024-12-13 中控技术股份有限公司 一种多晶硅生产控制方法、装置、电子设备及存储介质

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6114216A (en) * 1996-11-13 2000-09-05 Applied Materials, Inc. Methods for shallow trench isolation
US6881665B1 (en) * 2000-08-09 2005-04-19 Advanced Micro Devices, Inc. Depth of focus (DOF) for trench-first-via-last (TFVL) damascene processing with hard mask and low viscosity photoresist
US7698012B2 (en) * 2001-06-19 2010-04-13 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US7069104B2 (en) * 2002-04-30 2006-06-27 Canon Kabushiki Kaisha Management system, management apparatus, management method, and device manufacturing method
US6804005B2 (en) * 2002-05-02 2004-10-12 Timbre Technologies, Inc. Overlay measurements using zero-order cross polarization measurements
AU2003274370A1 (en) * 2002-06-07 2003-12-22 Praesagus, Inc. Characterization adn reduction of variation for integrated circuits
US6828542B2 (en) * 2002-06-07 2004-12-07 Brion Technologies, Inc. System and method for lithography process monitoring and control
CN100407215C (zh) * 2002-09-30 2008-07-30 东京毅力科创株式会社 用于监视和控制半导体生产过程的方法和装置
US7078344B2 (en) * 2003-03-14 2006-07-18 Lam Research Corporation Stress free etch processing in combination with a dynamic liquid meniscus
US7158851B2 (en) * 2003-06-30 2007-01-02 Tokyo Electron Limited Feedforward, feedback wafer to wafer control method for an etch process
US7289864B2 (en) * 2004-07-12 2007-10-30 International Business Machines Corporation Feature dimension deviation correction system, method and program product
US7451011B2 (en) * 2004-08-27 2008-11-11 Tokyo Electron Limited Process control using physical modules and virtual modules
US7212878B2 (en) * 2004-08-27 2007-05-01 Tokyo Electron Limited Wafer-to-wafer control using virtual modules
US7209798B2 (en) * 2004-09-20 2007-04-24 Tokyo Electron Limited Iso/nested cascading trim control with model feedback updates

Also Published As

Publication number Publication date
WO2007117737A2 (en) 2007-10-18
KR101311640B1 (ko) 2013-09-25
TW200741810A (en) 2007-11-01
CN101410844B (zh) 2011-08-03
KR20080111105A (ko) 2008-12-22
JP2009531866A (ja) 2009-09-03
US20070238201A1 (en) 2007-10-11
CN101410844A (zh) 2009-04-15
TWI393169B (zh) 2013-04-11
WO2007117737A3 (en) 2008-04-17

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