KR101311640B1 - 웨이퍼 균일성 제어에서의 동적 계측 샘플링을 이용한 웨이퍼 처리 방법 - Google Patents

웨이퍼 균일성 제어에서의 동적 계측 샘플링을 이용한 웨이퍼 처리 방법 Download PDF

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KR101311640B1
KR101311640B1 KR1020087026270A KR20087026270A KR101311640B1 KR 101311640 B1 KR101311640 B1 KR 101311640B1 KR 1020087026270 A KR1020087026270 A KR 1020087026270A KR 20087026270 A KR20087026270 A KR 20087026270A KR 101311640 B1 KR101311640 B1 KR 101311640B1
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KR20080111105A (ko
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메리트 펑크
라다 선다라라잔
다니엘 프래거
웨슬리 나즐
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인터내셔널 비지네스 머신즈 코포레이션
도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020087026270A 2006-03-28 2007-01-24 웨이퍼 균일성 제어에서의 동적 계측 샘플링을 이용한 웨이퍼 처리 방법 Active KR101311640B1 (ko)

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Application Number Priority Date Filing Date Title
US11/390,415 2006-03-28
US11/390,415 US20070238201A1 (en) 2006-03-28 2006-03-28 Dynamic metrology sampling with wafer uniformity control
PCT/US2007/060953 WO2007117737A2 (en) 2006-03-28 2007-01-24 Dynamic metrology sampling with wafer uniformity control

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KR20080111105A KR20080111105A (ko) 2008-12-22
KR101311640B1 true KR101311640B1 (ko) 2013-09-25

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US (1) US20070238201A1 (https=)
JP (1) JP5028473B2 (https=)
KR (1) KR101311640B1 (https=)
CN (1) CN101410844B (https=)
TW (1) TWI393169B (https=)
WO (1) WO2007117737A2 (https=)

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US7622308B2 (en) * 2008-03-07 2009-11-24 Mks Instruments, Inc. Process control using process data and yield data
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WO2013133974A1 (en) * 2012-03-08 2013-09-12 Applied Materials, Inc. Fitting of optical model to measured spectrum
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US9430593B2 (en) * 2012-10-11 2016-08-30 Kla-Tencor Corporation System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking
TWI649572B (zh) * 2012-11-09 2019-02-01 美商克萊譚克公司 用於計量目標之特性化之方法、計量系統及用於計量系統之視覺使用者介面
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JP6239294B2 (ja) * 2013-07-18 2017-11-29 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法
US9490182B2 (en) 2013-12-23 2016-11-08 Kla-Tencor Corporation Measurement of multiple patterning parameters
KR101890227B1 (ko) * 2014-01-24 2018-08-22 에이에스엠엘 네델란즈 비.브이. 기판 상에서 측정 작업을 수행하도록 작동가능한 장치, 리소그래피 장치, 및 기판 상에서 측정 작업을 수행하는 방법
EP2958010A1 (en) * 2014-06-20 2015-12-23 Thomson Licensing Apparatus and method for controlling the apparatus by a user
US9541906B2 (en) * 2014-09-11 2017-01-10 Hong-Te SU Controller capable of achieving multi-variable controls through single-variable control unit
US10152678B2 (en) * 2014-11-19 2018-12-11 Kla-Tencor Corporation System, method and computer program product for combining raw data from multiple metrology tools
US9995692B2 (en) * 2015-02-18 2018-06-12 GlobalFoundries, Inc. Systems and methods of controlling a manufacturing process for a microelectronic component
JP2017091126A (ja) * 2015-11-09 2017-05-25 アズビル株式会社 調節計
JP7041832B2 (ja) * 2017-12-08 2022-03-25 株式会社ナビタイムジャパン 情報処理システム、情報処理プログラム、情報処理装置および情報処理方法
WO2020150983A1 (en) * 2019-01-25 2020-07-30 Yangtze Memory Technologies Co., Ltd. Methods for forming hole structure in semiconductor device
KR102429079B1 (ko) 2019-12-23 2022-08-03 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리에 이용하는 파장 선택 방법
JP7408421B2 (ja) * 2020-01-30 2024-01-05 株式会社Ｓｃｒｅｅｎホールディングス 処理条件特定方法、基板処理方法、基板製品製造方法、コンピュータープログラム、記憶媒体、処理条件特定装置、及び、基板処理装置
KR102427207B1 (ko) 2020-10-14 2022-08-01 (주)아프로시스 Gis 기반 스파샬 웨이퍼 맵 생성 방법, 이를 이용한 웨이퍼 테스트 결과 제공 방법
US11688717B2 (en) * 2021-08-26 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanical wafer alignment detection for bonding process
TWI809913B (zh) * 2022-01-26 2023-07-21 南亞科技股份有限公司 臨界尺寸的測量方法
US12117733B2 (en) 2022-01-26 2024-10-15 Nanya Technology Corporation Method for measuring critical dimension
US12130559B2 (en) 2022-01-26 2024-10-29 Nanya Technology Corporation Method for measuring critical dimension
US12265379B2 (en) * 2022-05-05 2025-04-01 Applied Materials, Inc. Methods and mechanisms for adjusting film deposition parameters during substrate manufacturing
CN119126697A (zh) * 2024-08-09 2024-12-13 中控技术股份有限公司 一种多晶硅生产控制方法、装置、电子设备及存储介质

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Publication number Publication date
WO2007117737A2 (en) 2007-10-18
JP5028473B2 (ja) 2012-09-19
TW200741810A (en) 2007-11-01
CN101410844B (zh) 2011-08-03
KR20080111105A (ko) 2008-12-22
JP2009531866A (ja) 2009-09-03
US20070238201A1 (en) 2007-10-11
CN101410844A (zh) 2009-04-15
TWI393169B (zh) 2013-04-11
WO2007117737A3 (en) 2008-04-17

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