TWI393169B - 施行晶圓均勻度控制之動態量測取樣 - Google Patents

施行晶圓均勻度控制之動態量測取樣 Download PDF

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Publication number
TWI393169B
TWI393169B TW096110397A TW96110397A TWI393169B TW I393169 B TWI393169 B TW I393169B TW 096110397 A TW096110397 A TW 096110397A TW 96110397 A TW96110397 A TW 96110397A TW I393169 B TWI393169 B TW I393169B
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Taiwan
Prior art keywords
processing
wafer
measurement
map
post
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TW096110397A
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English (en)
Chinese (zh)
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TW200741810A (en
Inventor
方克 梅瑞特
普拉傑 丹尼爾Ｊ
聖德拉真 瑞德哈
納佐 衛斯理
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東京威力科創股份有限公司
國際商業機器股份有限公司
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Publication of TW200741810A publication Critical patent/TW200741810A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW096110397A 2006-03-28 2007-03-26 施行晶圓均勻度控制之動態量測取樣 TWI393169B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/390,415 US20070238201A1 (en) 2006-03-28 2006-03-28 Dynamic metrology sampling with wafer uniformity control

Publications (2)

Publication Number Publication Date
TW200741810A TW200741810A (en) 2007-11-01
TWI393169B true TWI393169B (zh) 2013-04-11

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TW096110397A TWI393169B (zh) 2006-03-28 2007-03-26 施行晶圓均勻度控制之動態量測取樣

Country Status (6)

Country Link
US (1) US20070238201A1 (https=)
JP (1) JP5028473B2 (https=)
KR (1) KR101311640B1 (https=)
CN (1) CN101410844B (https=)
TW (1) TWI393169B (https=)
WO (1) WO2007117737A2 (https=)

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US9490182B2 (en) 2013-12-23 2016-11-08 Kla-Tencor Corporation Measurement of multiple patterning parameters
KR101890227B1 (ko) * 2014-01-24 2018-08-22 에이에스엠엘 네델란즈 비.브이. 기판 상에서 측정 작업을 수행하도록 작동가능한 장치, 리소그래피 장치, 및 기판 상에서 측정 작업을 수행하는 방법
EP2958010A1 (en) * 2014-06-20 2015-12-23 Thomson Licensing Apparatus and method for controlling the apparatus by a user
US9541906B2 (en) * 2014-09-11 2017-01-10 Hong-Te SU Controller capable of achieving multi-variable controls through single-variable control unit
US10152678B2 (en) * 2014-11-19 2018-12-11 Kla-Tencor Corporation System, method and computer program product for combining raw data from multiple metrology tools
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JP7408421B2 (ja) * 2020-01-30 2024-01-05 株式会社Ｓｃｒｅｅｎホールディングス 処理条件特定方法、基板処理方法、基板製品製造方法、コンピュータープログラム、記憶媒体、処理条件特定装置、及び、基板処理装置
KR102427207B1 (ko) 2020-10-14 2022-08-01 (주)아프로시스 Gis 기반 스파샬 웨이퍼 맵 생성 방법, 이를 이용한 웨이퍼 테스트 결과 제공 방법
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Also Published As

Publication number Publication date
WO2007117737A2 (en) 2007-10-18
JP5028473B2 (ja) 2012-09-19
KR101311640B1 (ko) 2013-09-25
TW200741810A (en) 2007-11-01
CN101410844B (zh) 2011-08-03
KR20080111105A (ko) 2008-12-22
JP2009531866A (ja) 2009-09-03
US20070238201A1 (en) 2007-10-11
CN101410844A (zh) 2009-04-15
WO2007117737A3 (en) 2008-04-17

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