JP2009531866A5 - - Google Patents
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- JP2009531866A5 JP2009531866A5 JP2009503101A JP2009503101A JP2009531866A5 JP 2009531866 A5 JP2009531866 A5 JP 2009531866A5 JP 2009503101 A JP2009503101 A JP 2009503101A JP 2009503101 A JP2009503101 A JP 2009503101A JP 2009531866 A5 JP2009531866 A5 JP 2009531866A5
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- Japan
- Prior art keywords
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- 238000012545 processing Methods 0.000 claims description 331
- 238000005259 measurement Methods 0.000 claims description 323
- 238000000034 method Methods 0.000 claims description 265
- 230000008569 process Effects 0.000 claims description 155
- 238000012805 post-processing Methods 0.000 claims description 140
- 238000007781 pre-processing Methods 0.000 claims description 109
- 238000000691 measurement method Methods 0.000 claims description 36
- 239000000126 substance Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 233
- 238000000926 separation method Methods 0.000 description 35
- 239000000463 material Substances 0.000 description 32
- 238000005530 etching Methods 0.000 description 30
- 230000003287 optical effect Effects 0.000 description 22
- 238000013480 data collection Methods 0.000 description 21
- 239000010410 layer Substances 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 17
- 230000008859 change Effects 0.000 description 16
- 230000000737 periodic effect Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 238000004458 analytical method Methods 0.000 description 13
- 238000004088 simulation Methods 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 12
- 238000009966 trimming Methods 0.000 description 12
- 230000007547 defect Effects 0.000 description 11
- 238000002955 isolation Methods 0.000 description 11
- 238000005070 sampling Methods 0.000 description 11
- 230000009471 action Effects 0.000 description 10
- 238000004364 calculation method Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005388 cross polarization Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 238000007726 management method Methods 0.000 description 7
- 238000012423 maintenance Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000003672 processing method Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000013507 mapping Methods 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000001636 atomic emission spectroscopy Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000012937 correction Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- 230000006399 behavior Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000491 multivariate analysis Methods 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 238000011217 control strategy Methods 0.000 description 2
- 238000003745 diagnosis Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000003909 pattern recognition Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000003449 preventive effect Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000026676 system process Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 241001377894 Trias Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013523 data management Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002789 length control Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/390,415 | 2006-03-28 | ||
| US11/390,415 US20070238201A1 (en) | 2006-03-28 | 2006-03-28 | Dynamic metrology sampling with wafer uniformity control |
| PCT/US2007/060953 WO2007117737A2 (en) | 2006-03-28 | 2007-01-24 | Dynamic metrology sampling with wafer uniformity control |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009531866A JP2009531866A (ja) | 2009-09-03 |
| JP2009531866A5 true JP2009531866A5 (https=) | 2012-04-05 |
| JP5028473B2 JP5028473B2 (ja) | 2012-09-19 |
Family
ID=38575811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009503101A Expired - Fee Related JP5028473B2 (ja) | 2006-03-28 | 2007-01-24 | ウェハ均一性制御を用いた動的サンプリング測定法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20070238201A1 (https=) |
| JP (1) | JP5028473B2 (https=) |
| KR (1) | KR101311640B1 (https=) |
| CN (1) | CN101410844B (https=) |
| TW (1) | TWI393169B (https=) |
| WO (1) | WO2007117737A2 (https=) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005030586A1 (de) * | 2005-06-30 | 2007-01-11 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren und System für eine fortschrittliche Prozesssteuerung unter Anwendung der Messunsicherheit als Steuerungseingang |
| DE102005046972A1 (de) * | 2005-09-30 | 2007-04-05 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren und System für eine fortschrittliche Prozesssteuerung unter Anwendung einer Kombination aus gewichteten relativen Voreinstellungswerten |
| US7631286B2 (en) * | 2005-12-30 | 2009-12-08 | Wafertech Llc | Automated metrology recipe generation |
| US7539552B2 (en) * | 2006-10-09 | 2009-05-26 | Advanced Micro Devices, Inc. | Method and apparatus for implementing a universal coordinate system for metrology data |
| US7738986B2 (en) * | 2006-10-09 | 2010-06-15 | GlobalFoundries, Inc. | Method and apparatus for compensating metrology data for site bias prior to filtering |
| US8699027B2 (en) * | 2007-07-27 | 2014-04-15 | Rudolph Technologies, Inc. | Multiple measurement techniques including focused beam scatterometry for characterization of samples |
| US8271122B2 (en) | 2008-03-07 | 2012-09-18 | Mks Instruments, Inc. | Process control using process data and yield data |
| US7622308B2 (en) * | 2008-03-07 | 2009-11-24 | Mks Instruments, Inc. | Process control using process data and yield data |
| JP5761947B2 (ja) | 2010-09-02 | 2015-08-12 | キヤノン株式会社 | 半導体集積回路装置 |
| CN102809901A (zh) * | 2011-05-31 | 2012-12-05 | 无锡华润上华半导体有限公司 | 一种对不同曝光设备各层次的焦距的匹配方法 |
| TWI577523B (zh) * | 2011-06-17 | 2017-04-11 | 三菱麗陽股份有限公司 | 表面具有凹凸結構的模具、光學物品、其製造方法、面發光體用透明基材及面發光體 |
| TWI641921B (zh) * | 2011-08-01 | 2018-11-21 | Nova Measuring Instruments Ltd. | 用以檢驗圖案化結構量測的監測系統及方法 |
| WO2013133974A1 (en) * | 2012-03-08 | 2013-09-12 | Applied Materials, Inc. | Fitting of optical model to measured spectrum |
| JP5992706B2 (ja) * | 2012-03-26 | 2016-09-14 | 東京エレクトロン株式会社 | 半導体製造装置の障害監視システム及び障害監視方法 |
| US9430593B2 (en) * | 2012-10-11 | 2016-08-30 | Kla-Tencor Corporation | System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking |
| TWI649572B (zh) * | 2012-11-09 | 2019-02-01 | 美商克萊譚克公司 | 用於計量目標之特性化之方法、計量系統及用於計量系統之視覺使用者介面 |
| US9146551B2 (en) * | 2012-11-29 | 2015-09-29 | Asm Ip Holding B.V. | Scheduler for processing system |
| JP6239294B2 (ja) * | 2013-07-18 | 2017-11-29 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理装置の運転方法 |
| US9490182B2 (en) | 2013-12-23 | 2016-11-08 | Kla-Tencor Corporation | Measurement of multiple patterning parameters |
| KR101890227B1 (ko) * | 2014-01-24 | 2018-08-22 | 에이에스엠엘 네델란즈 비.브이. | 기판 상에서 측정 작업을 수행하도록 작동가능한 장치, 리소그래피 장치, 및 기판 상에서 측정 작업을 수행하는 방법 |
| EP2958010A1 (en) * | 2014-06-20 | 2015-12-23 | Thomson Licensing | Apparatus and method for controlling the apparatus by a user |
| US9541906B2 (en) * | 2014-09-11 | 2017-01-10 | Hong-Te SU | Controller capable of achieving multi-variable controls through single-variable control unit |
| US10152678B2 (en) * | 2014-11-19 | 2018-12-11 | Kla-Tencor Corporation | System, method and computer program product for combining raw data from multiple metrology tools |
| US9995692B2 (en) * | 2015-02-18 | 2018-06-12 | GlobalFoundries, Inc. | Systems and methods of controlling a manufacturing process for a microelectronic component |
| JP2017091126A (ja) * | 2015-11-09 | 2017-05-25 | アズビル株式会社 | 調節計 |
| JP7041832B2 (ja) * | 2017-12-08 | 2022-03-25 | 株式会社ナビタイムジャパン | 情報処理システム、情報処理プログラム、情報処理装置および情報処理方法 |
| WO2020150983A1 (en) * | 2019-01-25 | 2020-07-30 | Yangtze Memory Technologies Co., Ltd. | Methods for forming hole structure in semiconductor device |
| KR102429079B1 (ko) | 2019-12-23 | 2022-08-03 | 주식회사 히타치하이테크 | 플라스마 처리 방법 및 플라스마 처리에 이용하는 파장 선택 방법 |
| JP7408421B2 (ja) * | 2020-01-30 | 2024-01-05 | 株式会社Ｓｃｒｅｅｎホールディングス | 処理条件特定方法、基板処理方法、基板製品製造方法、コンピュータープログラム、記憶媒体、処理条件特定装置、及び、基板処理装置 |
| KR102427207B1 (ko) | 2020-10-14 | 2022-08-01 | (주)아프로시스 | Gis 기반 스파샬 웨이퍼 맵 생성 방법, 이를 이용한 웨이퍼 테스트 결과 제공 방법 |
| US11688717B2 (en) * | 2021-08-26 | 2023-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanical wafer alignment detection for bonding process |
| TWI809913B (zh) * | 2022-01-26 | 2023-07-21 | 南亞科技股份有限公司 | 臨界尺寸的測量方法 |
| US12117733B2 (en) | 2022-01-26 | 2024-10-15 | Nanya Technology Corporation | Method for measuring critical dimension |
| US12130559B2 (en) | 2022-01-26 | 2024-10-29 | Nanya Technology Corporation | Method for measuring critical dimension |
| US12265379B2 (en) * | 2022-05-05 | 2025-04-01 | Applied Materials, Inc. | Methods and mechanisms for adjusting film deposition parameters during substrate manufacturing |
| CN119126697A (zh) * | 2024-08-09 | 2024-12-13 | 中控技术股份有限公司 | 一种多晶硅生产控制方法、装置、电子设备及存储介质 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6114216A (en) * | 1996-11-13 | 2000-09-05 | Applied Materials, Inc. | Methods for shallow trench isolation |
| US6881665B1 (en) * | 2000-08-09 | 2005-04-19 | Advanced Micro Devices, Inc. | Depth of focus (DOF) for trench-first-via-last (TFVL) damascene processing with hard mask and low viscosity photoresist |
| US7698012B2 (en) * | 2001-06-19 | 2010-04-13 | Applied Materials, Inc. | Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing |
| US7069104B2 (en) * | 2002-04-30 | 2006-06-27 | Canon Kabushiki Kaisha | Management system, management apparatus, management method, and device manufacturing method |
| US6804005B2 (en) * | 2002-05-02 | 2004-10-12 | Timbre Technologies, Inc. | Overlay measurements using zero-order cross polarization measurements |
| AU2003274370A1 (en) * | 2002-06-07 | 2003-12-22 | Praesagus, Inc. | Characterization adn reduction of variation for integrated circuits |
| US6828542B2 (en) * | 2002-06-07 | 2004-12-07 | Brion Technologies, Inc. | System and method for lithography process monitoring and control |
| CN100407215C (zh) * | 2002-09-30 | 2008-07-30 | 东京毅力科创株式会社 | 用于监视和控制半导体生产过程的方法和装置 |
| US7078344B2 (en) * | 2003-03-14 | 2006-07-18 | Lam Research Corporation | Stress free etch processing in combination with a dynamic liquid meniscus |
| US7158851B2 (en) * | 2003-06-30 | 2007-01-02 | Tokyo Electron Limited | Feedforward, feedback wafer to wafer control method for an etch process |
| US7289864B2 (en) * | 2004-07-12 | 2007-10-30 | International Business Machines Corporation | Feature dimension deviation correction system, method and program product |
| US7451011B2 (en) * | 2004-08-27 | 2008-11-11 | Tokyo Electron Limited | Process control using physical modules and virtual modules |
| US7212878B2 (en) * | 2004-08-27 | 2007-05-01 | Tokyo Electron Limited | Wafer-to-wafer control using virtual modules |
| US7209798B2 (en) * | 2004-09-20 | 2007-04-24 | Tokyo Electron Limited | Iso/nested cascading trim control with model feedback updates |
-
2006
- 2006-03-28 US US11/390,415 patent/US20070238201A1/en not_active Abandoned
-
2007
- 2007-01-24 JP JP2009503101A patent/JP5028473B2/ja not_active Expired - Fee Related
- 2007-01-24 WO PCT/US2007/060953 patent/WO2007117737A2/en not_active Ceased
- 2007-01-24 KR KR1020087026270A patent/KR101311640B1/ko active Active
- 2007-01-24 CN CN200780011392XA patent/CN101410844B/zh active Active
- 2007-03-26 TW TW096110397A patent/TWI393169B/zh active
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