US20050287697A1 - Organic semicounductor device, process for producing the same, and organic semiconductor apparatus - Google Patents

Organic semicounductor device, process for producing the same, and organic semiconductor apparatus Download PDF

Info

Publication number
US20050287697A1
US20050287697A1 US10/532,078 US53207805A US2005287697A1 US 20050287697 A1 US20050287697 A1 US 20050287697A1 US 53207805 A US53207805 A US 53207805A US 2005287697 A1 US2005287697 A1 US 2005287697A1
Authority
US
United States
Prior art keywords
organic semiconductor
polymer layer
semiconductor device
insulating film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/532,078
Other languages
English (en)
Inventor
Akira Unno
Naotake Sato
Hajime Miyazaki
Noriyuki Doi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Assigned to CANON KABUSHIKI KAISHA reassignment CANON KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: UNNO, AKIRA, SATO, NAOTAKE, DOI, NORIYUKI, MIYAZAKI, HAJIME
Publication of US20050287697A1 publication Critical patent/US20050287697A1/en
Priority to US12/003,401 priority Critical patent/US7795612B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

Definitions

  • the present invention relates to an organic semiconductor device, a process for producing the same, and an active matrix display apparatus or an organic semiconductor apparatus such as an IC tag, having the organic semiconductor device.
  • organic TFTs are advantageously used in that the organic TFTs can be produced at a low temperature as compared with inorganic TFTs, and an inexpensive resin substrate as a flexible substrate can be used. Because of these advantages, organic TFTs are expected to be applied to a low-cost IC technology for a smart card, electronic tag, display, or the like.
  • a general organic TFT is composed of a substrate, a gate electrode, a gate insulating film, a source electrode, a drain electrode and an organic semiconductor.
  • Vg gate voltage
  • Id drain current
  • a mobility, ON/OFF ratio and gate threshold voltage are used as physical values for indicating performance of an organic TFT.
  • the mobility is generally calculated from the gradient of the Id 1/2 ⁇ Vg curve in a saturation region in which Id 1/2 and Vg are in a linear relation, and indicates the degree of easiness in allowing a current to flow.
  • the ON/OFF ratio is represented by the intensity ratio of the minimum Id to the maximum Id when changing the Vg.
  • the gate threshold voltage is defined by the X-intercept of a straight line in contact with the Id 1/2 ⁇ Vg curve in the saturation region, and indicates the gate voltage at which the TFT is switched on and off.
  • the mobility is 0.3 to 1 cm 2 /Vs
  • the ON/OFF ratio is 10 6 or more
  • the gate threshold voltage is 1 to 2 V.
  • Japanese Patent Application Laid-open No. H07-206599 discloses a method of orienting an organic semiconductor of an oligothiophene compound or the like using a polytetrafluoroethylene (PTFE) oriented film as an underlayer.
  • PTFE polytetrafluoroethylene
  • Japanese Patent Application Laid-open No. 2001-94107 discloses an organic semiconductor device produced by a method in which a fluorine polymer layer with a film thickness of 0.3 to 10 nm is formed on the surface of a gate insulating film by dipping, and a crystalline organic semiconductor is formed thereon.
  • a fluorine polymer layer with a film thickness of 0.3 to 10 nm is formed on the surface of a gate insulating film by dipping, and a crystalline organic semiconductor is formed thereon.
  • crystals of the organic semiconductor are not sufficiently oriented because the crystals have two peaks in the wide-angle X-ray spectrum, and the device does not have satisfactory characteristics.
  • U.S. Pat. No. 6,433,359 discloses a method of improving the mobility of an organic TFT by treating the surface of an alumina gate insulating film with alkyl phosphate. Since there are limitations to the gate insulating film to which this method can be applied, the method is also less versatile.
  • WO 03/041185 A2 discloses an organic TFT comprising a substantially nonfluorinated polymeric layer having a thickness less than about 400 angstrom interposed between a gate dielectric and an organic semiconductor layer.
  • the present invention provides a device structure of a high-performance organic TFT and a process for producing the high-performance organic TFT at a low cost.
  • the present invention also provides an organic semiconductor apparatus using the organic semiconductor device.
  • the present invention provides an organic semiconductor device having at least a substrate, an organic semiconductor, a gate insulating film and a conductor, and further having an electrode for applying bias, wherein a polymer layer, which is different from the gate insulating film, is provided in contact with the organic semiconductor, and the polymer layer is a copolymer of methyl methacrylate and divinylbenzene or a polymer represented by the formula (1) or (2): wherein R 11 represents a hydrogen atom or an alkyl group, R 12 represents a naphthyl group which may be substituted, a carbazoyl group which may be substituted, or a biphenyl group which may be substituted, and n denotes polymerization degree, or wherein R 21 represents a hydrogen atom or an alkyl group, the aromatic ring may be substituted, and n denotes polymerization degree; a process for producing the organic semiconductor device; and an organic semiconductor apparatus using the organic semiconductor device.
  • the conductor generally refers to a gate electrode, a source electrode, or a drain electrode.
  • the organic semiconductor device of the present invention can be used as a field effect transistor.
  • polymerization degree n in the formula (1) and (2) is a number in the range of 10 to 1000000.
  • the process for producing the organic semiconductor device there is a process for producing the organic semiconductor device, including at least
  • the conductive part which is a part of the substrate can be a gate electrode.
  • a gate electrode can be formed on the insulating film.
  • at least one pair of electrodes apart from each other in general, source/drain electrodes can be formed in suitable positions.
  • the order of formation of the constituents varies depending on various forms of the organic semiconductor device described below.
  • a preferable embodiment of the present invention can provide an organic semiconductor device, which can be produced uniformly on a substrate with a large area, having a high mobility and capable of largely modulating the drain current by the voltage applied to a gate electrode.
  • Another embodiment of the present invention can provide an organic semiconductor device that is operated in a stable manner, can be driven at a low voltage, has a long life expectancy, and can be produced in a simple process.
  • Still another embodiment of the present invention can provide an active matrix display apparatus using the organic semiconductor device or an organic semiconductor apparatus using the organic semiconductor device as an IC card electronic tag.
  • FIGS. 1A, 1B , 1 C, 1 D and 1 E are schematically sectional views showing embodiments of the organic semiconductor device of the present invention.
  • FIG. 1F is a schematically sectional view showing an organic semiconductor device having no polymer layer.
  • FIGS. 1A to 1 E Examples (a) to (e) of the structure of the organic semiconductor device used in the present invention are shown in FIGS. 1A to 1 E.
  • reference numeral 101 denotes a substrate
  • reference numeral 102 denotes a gate electrode
  • reference numeral 103 denotes a gate insulating film
  • reference numeral 104 denotes a polymer layer
  • reference numeral 105 denotes an organic semiconductor
  • reference numeral 106 denotes a source electrode
  • reference numeral 107 denotes a drain electrode
  • reference numeral 108 denotes a protective layer.
  • the protective layer is optionally provided, but may be omitted.
  • the above (a) to (e) are examples but the order of formation and configuration are not limited by the above (a) to (e).
  • the organic semiconductor layer is preferably formed after the polymer layer is formed. This is presumably because such an order of formation ensures the polymer layer to function as a layer for controlling the orientation of the organic semiconductor.
  • Examples of such a structure with a preferable configuration include:
  • the organic semiconductor device having a structure having the gate electrode, the gate insulating film, one of the source/drain electrodes, the organic semiconductor, and the other of source/drain electrodes on the substrate in that order, wherein a polymer layer is in contact with the organic semiconductor, and a structure having one of the source/drain electrodes, the organic semiconductor, the other of source/drain electrodes, a gate insulating film and the gate electrode on the substrate in that order, with a polymer layer in contact with the organic semiconductor are within the scope of the present invention, these structures also preferably have a configuration in which the organic semiconductor is formed on the polymer layer after forming the polymer layer.
  • the material for the substrate used in the present invention can be selected from the group consisting of various organic and inorganic materials.
  • specific examples of such materials include inorganic materials such as silicon, aluminum, glass and baked alumina; organic materials such as polyethylene terephthalate, polyethylene naphthalate, polyimide, polyethylene, polypropylene, polyether ether ketone, polysulfone and polyphenylene sulfide; and composite materials such as an organic material reinforced with a glass fiber.
  • the material for the gate electrode used in the present invention is selected from the group consisting of conductive materials.
  • conductive materials include metallic materials such as gold, platinum, copper, silver, palladium, chromium, molybdenum, titanium, nickel and aluminum; nonmetallic inorganic materials such as tin oxide, indium oxide and indium tin oxide; organic materials such as polythiophene and polyaniline; and carbon materials.
  • metallic material an alloy may also be used.
  • the conductive material is used as a substrate, the substrate may also be used as a gate electrode.
  • Examples of the material for the gate insulating film used in the present invention include inorganic materials such as silicon oxide, silicon nitride, alumina and tantalum oxide; and organic materials such as polymethyl methacrylate, polyimide, poly(p-xylene), polychloropyrene, polyethylene terephthalate, polyoxymethylene, silsesquioxane, polyvinyl chloride, polyvinylidene fluoride, cyanoethyl pullulan, polysulfone and polycarbonate.
  • inorganic materials such as silicon oxide, silicon nitride, alumina and tantalum oxide
  • organic materials such as polymethyl methacrylate, polyimide, poly(p-xylene), polychloropyrene, polyethylene terephthalate, polyoxymethylene, silsesquioxane, polyvinyl chloride, polyvinylidene fluoride, cyanoethyl pullulan, polysulfone and polycarbonate.
  • the polymer layer used in the present invention is a copolymer of methyl methacrylate and divinylbenzene, or a compound represented by the formula (1) or (2).
  • the film thickness of the polymer layer is preferably 5 nm or more and 30 nm or less.
  • the surface roughness (Ra) of the gate electrode in contact with the polymer layer is preferably 5 nm or less.
  • R 11 and R 12 are independently a hydrogen atom or an alkyl group.
  • the alkyl group include methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, t-butyl group, n-pentyl group and n-hexyl group.
  • the compound represented by the formula (1) or (2) may have a substituent on the aromatic ring.
  • substituents include alkyl groups such as methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, t-butyl group, n-pentyl group and n-hexyl group; aryl groups such as a phenyl group and p-tolyl group; alkoxy groups such as methoxy group and ethoxy group; and halogen atoms such as fluorine atom, chlorine atom, and bromine atom.
  • the compound may have two or more of the substituents.
  • the film thickness of the polymer layer composed of a compound represented by the formula (1) or (2) is preferably 100 nm or less, more preferably 50 nm or less, and still more preferably 30 nm or less.
  • the thickness of the polymer layer can be reduced to a monomolecular level.
  • the film thickness of the polymer layer is preferably 10 nm or more, more preferably 15 nm or more, and still more preferably 20 nm or more, from the viewpoint of easiness in forming a film.
  • the polymer layer of the present invention is formed by dissolving a polymer in an organic solvent and coating with the solution by spin coating, spray coating, or dip coating.
  • organic solvent there are no specific limitations to the organic solvent used, insofar as a polymer can be dissolved therein.
  • organic solvent examples include hydrocarbons such as hexane, cyclohexane, heptane and octane; aromatic hydrocarbons such as toluene, xylene and ethylbenzene; halogenated solvents such as dichloromethane, chloroform, carbon tetrachloride, 1-chlorobutane, chlorobenzene and dichlorobenzene; organic acid esters such as ethyl acetate, propyl acetate, butyl acetate and pentyl acetate; ethers such as diethyl ether, diisopropyl ether, dibutyl ether, anisole and dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone; nitrogen-containing organic solvents such as nitrobenzene, acetonitrile, N,N-dimethylformamide
  • the organic semiconductor material used in the present invention includes a crystalline material having a low molecular weight.
  • a crystalline material having a low molecular weight examples include pentacene, tetracene, a phthalocyanine compound, a porphyrin compound, and oligothiophene.
  • Pentacene is preferable.
  • the polymer layer accelerates the crystal growth of the organic semiconductor, use of a crystalline material having a low molecular weight other than pentacene is also effective.
  • a vapor deposition method a method of forming a film by dissolving the material in a solvent, coating the solution, and heating it may be also employed.
  • the coating method it is essential to select a solvent suitable for a material for the organic semiconductor and for dissolving the polymer layer with difficulty. Therefore, the vapor deposition method which does not require such a selection is more preferable.
  • the material for the source/drain electrodes used in the present invention can be selected from the group consisting of the same conductive materials as in the case of the material for the gate electrode described above.
  • the protective layer used in the present invention is formed in order to prevent deterioration of characteristics of an organic TFT.
  • a composite material of an organic material such as an epoxy resin or silicone resin and an inorganic compound such as glass or aluminum is generally used.
  • the protective layer may be omitted.
  • the gate electrode, gate insulating film, source/drain electrode and organic semiconductor used in the present invention, other than the polymer layer, are formed by a known method. Specific examples of such a method include vacuum vapor deposition, spattering, plasma CVD, spin coating, dip coating, spray coating and printing. Patterning using a combination of existing photolithography and dry etching or wet etching may also be carried out.
  • the present invention relates to an organic semiconductor apparatus, wherein the apparatus employs the organic semiconductor device as an IC information electronic tag.
  • An electronic tag smart card as an example of the organic semiconductor apparatus of the present invention using the IC information electronic tag will be described.
  • Tagging an article by bar codes or symbols to make optical characters easily recognized has been utilized for a long time to identify and detect a product catalogue, baggage, chit made of paper, or another movable article which is easily left behind or lost.
  • Such an optically perceived tag must be maintained to be visible for identification.
  • the tag easily becomes unreadable due to scars on the surface or other damages.
  • a method of using an electronic tag based on the radio frequency has been attempted.
  • such a tag is provided with a semiconductor memory for storing data, a processing logic and an antenna for broadcasting the data, which are all embedded in a container of a heat-curable resin such as an epoxy resin, a thermoplastic resin, or another suitable plastic material.
  • a heat-curable resin such as an epoxy resin, a thermoplastic resin, or another suitable plastic material.
  • the data storage capacity is typically in the range of several bits to several kilobits, and more typically 64 bits.
  • the tag can comprise a read-only memory (ROM), electrically programmable or erasable ROM (EPROM or EEPROM). or flash memory.
  • ROM read-only memory
  • EPROM or EEPROM electrically programmable or erasable ROM
  • flash memory flash memory.
  • Power is supplied to the electronic tag by a long-life small battery, a photovoltaic power, a thermal converter, an induced power converter depending on the electromagnetic energy added from outside, or another suitable power source. Formation of the electronic tag with a circuit using the organic semiconductor device simplifies the process for producing the tag and makes the tag available at a low cost.
  • the present invention relates to an active matrix display apparatus, wherein using the organic semiconductor device as an active device.
  • each pixel constituting the display part is provided with an active matrix device through which voltage is applied to the liquid crystals.
  • the apparatus is driven in the following manner. Intersections of n ⁇ m matrix wires consisting of n rows of scanning lines and m columns of signal lines are provided with active matrix devices such as TFTs.
  • the gate electrodes, drain electrodes and source electrodes of the TFTs are respectively connected to the scanning lines, signal lines, and pixel electrodes.
  • the address signal is supplied to the scanning lines, and the display signal is supplied to the signal lines.
  • a mixed solution of methyl methacrylate, divinylbenzene and a polymerization initiator was dropped in a reflux of toluene at a reflux temperature of toluene (110° C. to 120° C.). The mixture was then cooled to 80° C., and maintained at that temperature for three hours. After allowing to be cooled, the mixture was reprecipitated in methanol. After decanting the supernatant and washing the precipitate with methanol, the precipitate was filtered. The filtrate was dried by heating under reduced pressure to obtain the target polymer.
  • a copolymer with a copolymerization rate (B/A) of 0.001 to 0.05 was produced using the above method.
  • a polyimide substrate was used in this example. Upilon (trade name) manufactured by Ube Industries, Ltd. with a thickness of 125 ⁇ m was used as the substrate.
  • copper was formed as a film by sputtering, and the film was patterned by photolithography to produce a gate electrode wire. Further, a coating-type insulating film composed of methylsilsesquioxane was formed thereon, and baked at 230° C. to form a substrate for a semiconductor.
  • the polyimide substrate was washed in the following manner. A step of ultrasonically washing the polyimide substrate in acetone with a purity of 99% or more for one minute and then a step of washing the substrate ultrasonically in pure water for five minutes were carried out twice, respectively. After the washing, the pure water was blowed away by an N 2 gas. Then, the substrate was irradiated with ultraviolet (UV) lights at wavelengths of 184.9 nm and 253.7 nm at an intensity of 100 mW for an irradiation time of 20 seconds to remove the organic contaminant.
  • UV ultraviolet
  • a polymer layer was formed using the copolymer with a copolymerization ratio of 1:0.011 produced in Synthetic Example 1.
  • the film was formed by spin coating in which a 0.1% solution of the copolymer diluted with xylene was maintained at 500 rpm for ten seconds, and then the solution was formed as a film at 3,000 rpm.
  • the film thickness was 20 nm.
  • an electrode was formed by screen printing.
  • a colloidal silver conductive paste manufactured by Nippon Paint Co., Ltd. was used for printing.
  • the electrode was baked at 200° C. after the printing.
  • a commercially available powder of pentacene was purified by sublimation and vacuum deposited.
  • the pentacene-deposited film was produced under the following conditions.
  • the ultimate vacuum in the vapor deposition apparatus chamber was 3 ⁇ 10 ⁇ 4 Pa to 5 ⁇ 10 ⁇ 4 Pa.
  • the pentacene powder was put in a K-cell.
  • a substrate was placed at a position of about 20 cm above a boat.
  • the cell was heated to about 260° C. to sublimate the pentacene, which was deposited on the surface of the substrate.
  • the substrate was heated to 125° C. using a heater board.
  • a crystal oscillator was placed almost level with the substrate on the heater board.
  • the film thickness and the vapor deposition speed were calculated from the change in the resonant frequency of the oscillator.
  • the thickness of the pentacene film was adjusted to 100 nm.
  • Ci Capacitance per unit area (C/cm 2 )
  • Vg Gate voltage (V)
  • Vth Gate threshold voltage (V)
  • the mobility was 1.12 cm 2 /Vs
  • the ON/OFF ratio was 2.20E+08
  • the Vth was ⁇ 5 V.
  • a transistor was produced in the same manner as in Example 1. However, a polymer layer film was not formed. In this case, the transistor had a mobility of 0.060 m 2 /Vs, an ON/OFF ratio of 2.5E+06, and a Vth of ⁇ 15 V.
  • Example 2 Each transistor was produced in the same manner as in Example 1. However, the copolymerization rate (B/A) of the polymer layer on the insulating film was adjusted to 0.045 (Comparative Example 2), 0.050 (Comparative Example 3) or 0 (PMMA homopolymer) (Comparative Example 4). The results are shown in Table 2.
  • Example 18 Each transistor was produced in the same manner as in Example 18. However, the film thickness of the polymer layer was adjusted to 1 nm or 35 nm or more. The results are shown in Table 4. TABLE 4 Reference Example Film Reference thickness Mobility Example (nm) (cm 2 /Vs) ON/OFF ratio Vth (V) 1 35 0.2 2.31E+04 ⁇ 10 2 40 0.02 4.60E+03 ⁇ 2 3 45 0.03 3.24E+03 ⁇ 1 4 1 0.1 1.00E+03 24
  • Example 2 Glass was used as a substrate. Further, aluminum was used as a gate electrode, which was patterned in the same process as in Example 1. Al 2 O 3 was then sputtered to form an insulating film. The surface roughness of the insulating film was changed by changing the substrate temperature or sputtering speed. Then, a polymer layer was formed in the same manner as in Example 1. The relation between the surface roughness of the insulating film and the polymer layer was examined. The results are shown in Table 5. In this case, the surface roughness was observed by AFM, and the surface was visually observed to judge that the condition of the surface is “good (not rough)” or “rough”.
  • Example 29 Each transistor was produced in the same manner as in Example 29. However, the surface roughness of the gate insulating film was adjusted to 5.2 nm or more. Characteristics of the transistors are shown in Table 6. TABLE 6 Reference Example Surface Thick- Con- roughness ness dition of gate of of insulating polymer polymer Reference film Ra layer layer Mobility ON/OFF Vth Example (nm) (nm) surface (cm 2 /Vs) ratio (V) 5 5.2 20 Rough 0.21 1.85E+05 ⁇ 14 6 5.7 20 Rough 0.12 8.56E+05 ⁇ 13 7 6.2 20 Rough 0.03 2.30E+03 ⁇ 6 8 7 20 Rough 0.04 1.30E+03 ⁇ 2 9 8.3 20 Rough 0.06 9.56E+02 3
  • a high-doped silicon substrate having a 500 nm-thick silicon oxide film was prepared.
  • the silicon substrate was also used as a gate electrode, and the silicon oxide film was used as a gate insulating film.
  • the silicon substrate was immersed in acetone with a purity of 99% or more and ultrasonically washed for one minute. Then, the substrate was immersed in pure water and ultrasonically washed for one minute. After the washing, the pure water remaining on the surface was blowed away using a nitrogen gas.
  • a 1.0 wt % solution of poly(1-vinylnaphthalene) manufactured by Aldrich Co. (number average molecular weight: about 100,000) in p-xylene was prepared.
  • the previously prepared substrate was coated with the solution by spin coating (maintaining at 500 rpm, and then forming a film at 3,000 rpm).
  • the coating was baked by heating on a hot plate at 150° C. for five minutes. In this case, the film thickness was 22 nm.
  • pentacene was formed as a film by vacuum vapor deposition. During the vapor deposition, the previously prepared silicon substrate with the polymer layer formed thereon was heated to 70° C. The film thickness of pentacene was adjusted to 50 nm.
  • a source electrode and a drain electrode were formed on the pentacene film using gold by vacuum vapor deposition.
  • the gate length was 40 to 50 ⁇ m, and the gate width was 3 mm.
  • a protective layer was formed by sealing with silicone grease manufactured by Dow Corning Asia Corp. and a glass substrate.
  • the mobility was calculated by the calculating formula (1) using an HP parameter analyzer (HP4156C).
  • HP4156C HP parameter analyzer
  • the mobility, ON/OFF ratio and gate threshold voltage are shown in Table 7.
  • Example 42 The same operation as in Example 42 was carried out to produce an organic TFT, except for using a solution of 0.6 wt. % to 3.2 wt. % poly(2-vinylnaphthalene) (manufactured by Aldrich Co., weight average molecular weight: 175,000) in toluene.
  • the film thickness of the polymer layer was 15 nm to 100 nm.
  • the mobility, ON/OFF ratio and gate threshold voltage are shown in Table 8.
  • a high-doped silicon substrate having a 500 nm-thick silicon oxide film was immersed in acetone with a purity of 99% or more and ultrasonically washed for one minute. Then, the substrate was immersed in pure water and ultrasonically washed for one minute. After the washing, the pure water remaining on the surface was blowed away using a nitrogen gas.
  • a source electrode and a drain electrode were formed by screen printing using a silver paste manufactured by Taiyo Ink Mfg. Co., Ltd.
  • the electrodes were baked in a clean oven at 150° C. for one hour.
  • the gate length was 40 to 50 am
  • the gate width was 3 mm.
  • the resulting substrate was irradiated with ultraviolet rays (184.9 nm, 253.7 nm) using an optical surface processor PL16-110 manufactured by SEN Lights Corp. (optical surface processor power source: UVE-110-1H, high-output low-pressure mercury lamp: SUV110GS-36) for 20 minutes to remove the organic contaminant.
  • optical surface processor power source UVE-110-1H
  • SUV110GS-36 high-output low-pressure mercury lamp
  • the radiated substrate was then immersed in acetone with a purity of 99% or more and ultrasonically washed for one minute. Then, the substrate was immersed in pure water and ultrasonically washed for one minute. After the washing, the pure water remaining on the surface was blowed away using a nitrogen gas.
  • a 0.8 wt. % solution of poly(2-vinylnaphthalene) (manufactured by Aldrich Co., weight average molecular weight: 175,000) in toluene was prepared.
  • the previously prepared substrate was coated with the solution by spin coating (forming a film at 3,000 rpm) .
  • the film thickness was 22 nm.
  • the coating was baked by heating on a hot plate at 150° C. for five minutes.
  • Pentacene was formed as a film by vacuum vapor deposition. During the vapor deposition, the previously prepared silicon substrate with the polymer layer formed thereon was heated to 700° C. The film thickness of pentacene was adjusted to 75 nm.
  • An organic TFT with the structure of FIG. 1C was produced in the same operation as in Example 52, except for changing the formation order of the source/drain electrodes and the polymer layer (Example 55).
  • An organic TFT not having a polymer layer as shown in FIG. 1F (Comparative Example 6) was produced in the same manner as in Example 52, except for omitting the operation of forming a polymer layer.
  • the mobility, ON/OFF ratio and gate threshold voltage are shown in Table 9.
  • the mobility of each of these organic TFTs was calculated by the calculating formula (1) using an HP parameter analyzer (HP4156C) .
  • the mobility, ON/OFF ratio and gate threshold voltage are shown in Table 9.
  • the organic TFTs having a polymer layer had advantages in performance such as a high mobility and/or a high ON/OFF ratio.
  • the present invention provides an organic semiconductor device, which can be produced uniformly on a substrate with a large area, having a high mobility and capable of modulating the drain current significantly by the voltage applied to a gate electrode.
  • the present invention also provides an organic semiconductor device that is operated in a stable manner, can be driven at a low voltage, has a long life expectancy, and can be produced in a simple process.
  • the present invention further provides an active matrix display apparatus using the organic semiconductor device or an organic semiconductor apparatus using the organic semiconductor device as an IC card electronic tag.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
US10/532,078 2003-10-09 2004-10-08 Organic semicounductor device, process for producing the same, and organic semiconductor apparatus Abandoned US20050287697A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/003,401 US7795612B2 (en) 2003-10-09 2007-12-26 Organic semiconductor device, process for producing the same, and organic semiconductor apparatus

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2003351159 2003-10-09
JP2003351159 2003-10-09
JP2004264499A JP2005136383A (ja) 2003-10-09 2004-09-10 有機半導体素子、その製造方法および有機半導体装置
JP2004264499 2004-09-10
PCT/JP2004/015295 WO2005036652A1 (en) 2003-10-09 2004-10-08 Organic semiconductor device, process for producing the same, and organic semiconductor apparatus

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/003,401 Division US7795612B2 (en) 2003-10-09 2007-12-26 Organic semiconductor device, process for producing the same, and organic semiconductor apparatus

Publications (1)

Publication Number Publication Date
US20050287697A1 true US20050287697A1 (en) 2005-12-29

Family

ID=34436916

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/532,078 Abandoned US20050287697A1 (en) 2003-10-09 2004-10-08 Organic semicounductor device, process for producing the same, and organic semiconductor apparatus
US12/003,401 Expired - Fee Related US7795612B2 (en) 2003-10-09 2007-12-26 Organic semiconductor device, process for producing the same, and organic semiconductor apparatus

Family Applications After (1)

Application Number Title Priority Date Filing Date
US12/003,401 Expired - Fee Related US7795612B2 (en) 2003-10-09 2007-12-26 Organic semiconductor device, process for producing the same, and organic semiconductor apparatus

Country Status (3)

Country Link
US (2) US20050287697A1 (enrdf_load_stackoverflow)
JP (1) JP2005136383A (enrdf_load_stackoverflow)
WO (1) WO2005036652A1 (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060081880A1 (en) * 2003-03-03 2006-04-20 Canon Kabushiki Kaisha Organic field effect transistor and method for producing the same
US20060113523A1 (en) * 2003-04-01 2006-06-01 Makoto Kubota Organic semiconductor device
US20060151781A1 (en) * 2005-01-07 2006-07-13 Kim Joo Y Organic thin film transistor including fluorine-based polymer thin film and method of fabricating the same
US20070194305A1 (en) * 2006-02-21 2007-08-23 Samsung Electronics Co., Ltd. Organic thin film transistor comprising fluorine-based polymer thin film and method for fabricating the same
US20070262297A1 (en) * 2006-05-10 2007-11-15 Salvatore Leonardi Organic thin-film transistor device and corresponding manufacturing method
US20080124554A1 (en) * 2006-11-27 2008-05-29 Ji-Ho Hong Semiconductor device and method for manufacturing the same
US20090001356A1 (en) * 2007-06-29 2009-01-01 3M Innovative Properties Company Electronic devices having a solution deposited gate dielectric
US20090004771A1 (en) * 2007-06-29 2009-01-01 3M Innovative Properties Company Methods for making electronic devices with a solution deposited gate dielectric
CN100505365C (zh) * 2006-10-13 2009-06-24 中国科学院化学研究所 一种实现低电压操作有机场效应晶体管的方法
US20090236593A1 (en) * 2005-10-10 2009-09-24 Stmicroelectronics S.R.L. Organic thin film transistor and process for manufacturing same

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101454659A (zh) * 2006-05-29 2009-06-10 皇家飞利浦电子股份有限公司 用于感测应用的有机场效应晶体管
US8148543B2 (en) * 2006-10-16 2012-04-03 Canon Kabushiki Kaisha Organic semiconductor material and organic thin-film transistor
JP5234533B2 (ja) * 2007-03-26 2013-07-10 国立大学法人九州大学 有機半導体素子およびその製造方法
US8637343B2 (en) * 2007-04-25 2014-01-28 Merck Patent Gmbh Process for preparing an electronic device
JP5148211B2 (ja) * 2007-08-30 2013-02-20 出光興産株式会社 有機薄膜トランジスタ及び有機薄膜発光トランジスタ
US20120119179A1 (en) * 2010-11-05 2012-05-17 Kabushiki Kaisha Toshiba Memory device and method for manufacturing the same
US8901547B2 (en) * 2012-08-25 2014-12-02 Polyera Corporation Stacked structure organic light-emitting transistors
GB201810710D0 (en) * 2018-06-29 2018-08-15 Smartkem Ltd Sputter Protective Layer For Organic Electronic Devices

Citations (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4826901A (en) * 1985-09-07 1989-05-02 Rohm Gmbh Curable casting resins
US5500537A (en) * 1989-08-17 1996-03-19 Mitsubishi Denki Kabushiki Kaisha Field-effect transistor with at least two different semiconductive organic channel compounds
US5546889A (en) * 1993-10-06 1996-08-20 Matsushita Electric Industrial Co., Ltd. Method of manufacturing organic oriented film and method of manufacturing electronic device
US5970361A (en) * 1992-08-25 1999-10-19 Canon Kabushiki Kaisha Process for producing semiconductor device having porous regions
US6106613A (en) * 1997-03-17 2000-08-22 Canon Kabushiki Kaisha Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate
US6143629A (en) * 1998-09-04 2000-11-07 Canon Kabushiki Kaisha Process for producing semiconductor substrate
US6143628A (en) * 1997-03-27 2000-11-07 Canon Kabushiki Kaisha Semiconductor substrate and method of manufacturing the same
US6171982B1 (en) * 1997-12-26 2001-01-09 Canon Kabushiki Kaisha Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same
US6221738B1 (en) * 1997-03-26 2001-04-24 Canon Kabushiki Kaisha Substrate and production method thereof
US6252002B1 (en) * 1998-11-30 2001-06-26 Sumitomo Chemical Company Limited Methyl Methacrylate resin composition
US6335269B1 (en) * 1998-09-04 2002-01-01 Canon Kabushiki Kaisha Semiconductor substrate and method for producing the same
US6375738B1 (en) * 1999-03-26 2002-04-23 Canon Kabushiki Kaisha Process of producing semiconductor article
US6407367B1 (en) * 1997-12-26 2002-06-18 Canon Kabushiki Kaisha Heat treatment apparatus, heat treatment process employing the same, and process for producing semiconductor article
US6413874B1 (en) * 1997-12-26 2002-07-02 Canon Kabushiki Kaisha Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same
US6433359B1 (en) * 2001-09-06 2002-08-13 3M Innovative Properties Company Surface modifying layers for organic thin film transistors
US6593211B2 (en) * 1998-09-04 2003-07-15 Canon Kabushiki Kaisha Semiconductor substrate and method for producing the same
US6613678B1 (en) * 1998-05-15 2003-09-02 Canon Kabushiki Kaisha Process for manufacturing a semiconductor substrate as well as a semiconductor thin film, and multilayer structure
US6639327B2 (en) * 2000-07-10 2003-10-28 Canon Kabushiki Kaisha Semiconductor member, semiconductor device and manufacturing methods thereof
US20040012017A1 (en) * 2002-07-17 2004-01-22 Pioneer Corporation Organic semiconductor device
US20040012018A1 (en) * 2002-07-17 2004-01-22 Pioneer Corporation Organic semiconductor device
US6720572B1 (en) * 1999-06-25 2004-04-13 The Penn State Research Foundation Organic light emitters with improved carrier injection
US6723394B1 (en) * 1999-06-21 2004-04-20 Cambridge University Technical Services Limited Aligned polymers for an organic TFT
US20040161873A1 (en) * 2002-11-25 2004-08-19 Dimitrakopoulos Christos D. Organic underlayers that improve the performance of organic semiconductors
US6783588B2 (en) * 2000-12-15 2004-08-31 Canon Kabushiki Kaisha BaTiO3-PbTiO3 series single crystal and method of manufacturing the same piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator
US20040209487A1 (en) * 2003-04-21 2004-10-21 Applied Materials, Inc. Pecvd silicon oxide thin film deposition
US6828214B2 (en) * 2001-04-06 2004-12-07 Canon Kabushiki Kaisha Semiconductor member manufacturing method and semiconductor device manufacturing method
US20040259315A1 (en) * 2003-06-09 2004-12-23 Canon Kabushiki Kaisha Semiconductor substrate, semiconductor device, and method of manufacturing the same
US6946676B2 (en) * 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
US20050247928A1 (en) * 2002-06-20 2005-11-10 Canon Kabushiki Kaisha Organic semiconductor element, production mehtod therefor and organic semiconductor device
US7029945B2 (en) * 2001-12-19 2006-04-18 Merck Patent Gmbh Organic field effect transistor with an organic dielectric
US20060081880A1 (en) * 2003-03-03 2006-04-20 Canon Kabushiki Kaisha Organic field effect transistor and method for producing the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2055752A1 (en) 1990-12-03 1992-06-04 Peter Anton August Klusener Catalyst compositions
JPH08254702A (ja) * 1995-03-15 1996-10-01 Hoechst Ind Kk 液晶表示素子
US6326640B1 (en) * 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
JP3817993B2 (ja) 1998-11-30 2006-09-06 住友化学株式会社 メタクリル酸メチル系樹脂組成物
JP2001094107A (ja) 1999-09-20 2001-04-06 Hitachi Ltd 有機半導体装置及び液晶表示装置
JP2004165427A (ja) * 2002-11-13 2004-06-10 Konica Minolta Holdings Inc 有機薄膜トランジスタ素子
US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods

Patent Citations (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4826901A (en) * 1985-09-07 1989-05-02 Rohm Gmbh Curable casting resins
US5500537A (en) * 1989-08-17 1996-03-19 Mitsubishi Denki Kabushiki Kaisha Field-effect transistor with at least two different semiconductive organic channel compounds
US5970361A (en) * 1992-08-25 1999-10-19 Canon Kabushiki Kaisha Process for producing semiconductor device having porous regions
US5546889A (en) * 1993-10-06 1996-08-20 Matsushita Electric Industrial Co., Ltd. Method of manufacturing organic oriented film and method of manufacturing electronic device
US5556706A (en) * 1993-10-06 1996-09-17 Matsushita Electric Industrial Co., Ltd. Conductive layered product and method of manufacturing the same
US5912473A (en) * 1993-10-06 1999-06-15 Matsushita Electric Industrial Co., Ltd. Method of manufacturing organic oriented film and method of manufacturing electronic device
US6106613A (en) * 1997-03-17 2000-08-22 Canon Kabushiki Kaisha Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate
US6221738B1 (en) * 1997-03-26 2001-04-24 Canon Kabushiki Kaisha Substrate and production method thereof
US6569748B1 (en) * 1997-03-26 2003-05-27 Canon Kabushiki Kaisha Substrate and production method thereof
US6143628A (en) * 1997-03-27 2000-11-07 Canon Kabushiki Kaisha Semiconductor substrate and method of manufacturing the same
US6171982B1 (en) * 1997-12-26 2001-01-09 Canon Kabushiki Kaisha Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same
US6407367B1 (en) * 1997-12-26 2002-06-18 Canon Kabushiki Kaisha Heat treatment apparatus, heat treatment process employing the same, and process for producing semiconductor article
US6413874B1 (en) * 1997-12-26 2002-07-02 Canon Kabushiki Kaisha Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same
US6506665B1 (en) * 1997-12-26 2003-01-14 Canon Kabushiki Kaisha Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same
US6613678B1 (en) * 1998-05-15 2003-09-02 Canon Kabushiki Kaisha Process for manufacturing a semiconductor substrate as well as a semiconductor thin film, and multilayer structure
US6335269B1 (en) * 1998-09-04 2002-01-01 Canon Kabushiki Kaisha Semiconductor substrate and method for producing the same
US6143629A (en) * 1998-09-04 2000-11-07 Canon Kabushiki Kaisha Process for producing semiconductor substrate
US6593211B2 (en) * 1998-09-04 2003-07-15 Canon Kabushiki Kaisha Semiconductor substrate and method for producing the same
US6252002B1 (en) * 1998-11-30 2001-06-26 Sumitomo Chemical Company Limited Methyl Methacrylate resin composition
US6375738B1 (en) * 1999-03-26 2002-04-23 Canon Kabushiki Kaisha Process of producing semiconductor article
US6723394B1 (en) * 1999-06-21 2004-04-20 Cambridge University Technical Services Limited Aligned polymers for an organic TFT
US6720572B1 (en) * 1999-06-25 2004-04-13 The Penn State Research Foundation Organic light emitters with improved carrier injection
US6639327B2 (en) * 2000-07-10 2003-10-28 Canon Kabushiki Kaisha Semiconductor member, semiconductor device and manufacturing methods thereof
US20040231581A1 (en) * 2000-12-15 2004-11-25 Canon Kabushiki Kaisha BaTiO3-PbTiO3 series single crystal and method of manufacturing the same, piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator
US6783588B2 (en) * 2000-12-15 2004-08-31 Canon Kabushiki Kaisha BaTiO3-PbTiO3 series single crystal and method of manufacturing the same piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator
US6828214B2 (en) * 2001-04-06 2004-12-07 Canon Kabushiki Kaisha Semiconductor member manufacturing method and semiconductor device manufacturing method
US7008701B2 (en) * 2001-04-06 2006-03-07 Canon Kabushiki Kaisha Semiconductor member manufacturing method and semiconductor device manufacturing method
US6433359B1 (en) * 2001-09-06 2002-08-13 3M Innovative Properties Company Surface modifying layers for organic thin film transistors
US6946676B2 (en) * 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
US7029945B2 (en) * 2001-12-19 2006-04-18 Merck Patent Gmbh Organic field effect transistor with an organic dielectric
US20050247928A1 (en) * 2002-06-20 2005-11-10 Canon Kabushiki Kaisha Organic semiconductor element, production mehtod therefor and organic semiconductor device
US20040012017A1 (en) * 2002-07-17 2004-01-22 Pioneer Corporation Organic semiconductor device
US20040012018A1 (en) * 2002-07-17 2004-01-22 Pioneer Corporation Organic semiconductor device
US20040161873A1 (en) * 2002-11-25 2004-08-19 Dimitrakopoulos Christos D. Organic underlayers that improve the performance of organic semiconductors
US20060081880A1 (en) * 2003-03-03 2006-04-20 Canon Kabushiki Kaisha Organic field effect transistor and method for producing the same
US20040209487A1 (en) * 2003-04-21 2004-10-21 Applied Materials, Inc. Pecvd silicon oxide thin film deposition
US20040259315A1 (en) * 2003-06-09 2004-12-23 Canon Kabushiki Kaisha Semiconductor substrate, semiconductor device, and method of manufacturing the same

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060081880A1 (en) * 2003-03-03 2006-04-20 Canon Kabushiki Kaisha Organic field effect transistor and method for producing the same
US7588959B2 (en) 2003-03-03 2009-09-15 Canon Kabushiki Kaisha Organic field effect transistor and method for producing the same
US20060113523A1 (en) * 2003-04-01 2006-06-01 Makoto Kubota Organic semiconductor device
US7265377B2 (en) 2003-04-01 2007-09-04 Canon Kabushiki Kaisha Organic semiconductor device
US7364940B2 (en) * 2005-01-07 2008-04-29 Samsung Electronics Co., Ltd. Organic thin film transistor including fluorine-based polymer thin film and method of fabricating the same
US20060151781A1 (en) * 2005-01-07 2006-07-13 Kim Joo Y Organic thin film transistor including fluorine-based polymer thin film and method of fabricating the same
US20090236593A1 (en) * 2005-10-10 2009-09-24 Stmicroelectronics S.R.L. Organic thin film transistor and process for manufacturing same
US8653505B2 (en) * 2005-10-10 2014-02-18 Stmicroelectronics S.R.L. Organic thin film transistor and process for manufacturing same
US20070194305A1 (en) * 2006-02-21 2007-08-23 Samsung Electronics Co., Ltd. Organic thin film transistor comprising fluorine-based polymer thin film and method for fabricating the same
US7646014B2 (en) * 2006-02-21 2010-01-12 Samsung Electronics Co., Ltd. Organic thin film transistor comprising fluorine-based polymer thin film and method for fabricating the same
US20070262297A1 (en) * 2006-05-10 2007-11-15 Salvatore Leonardi Organic thin-film transistor device and corresponding manufacturing method
CN100505365C (zh) * 2006-10-13 2009-06-24 中国科学院化学研究所 一种实现低电压操作有机场效应晶体管的方法
US20080124554A1 (en) * 2006-11-27 2008-05-29 Ji-Ho Hong Semiconductor device and method for manufacturing the same
US20090001356A1 (en) * 2007-06-29 2009-01-01 3M Innovative Properties Company Electronic devices having a solution deposited gate dielectric
US20090004771A1 (en) * 2007-06-29 2009-01-01 3M Innovative Properties Company Methods for making electronic devices with a solution deposited gate dielectric
US7879688B2 (en) * 2007-06-29 2011-02-01 3M Innovative Properties Company Methods for making electronic devices with a solution deposited gate dielectric

Also Published As

Publication number Publication date
WO2005036652A1 (en) 2005-04-21
US7795612B2 (en) 2010-09-14
US20080105868A1 (en) 2008-05-08
JP2005136383A (ja) 2005-05-26

Similar Documents

Publication Publication Date Title
US7795612B2 (en) Organic semiconductor device, process for producing the same, and organic semiconductor apparatus
US7459721B2 (en) Field effect type organic transistor and process for production thereof
JP4304033B2 (ja) 有機ゲート絶縁膜およびこれを用いた有機薄膜トランジスタ
US7402681B2 (en) Compound with indolocarbazole moieties and devices containing such compound
JP5054885B2 (ja) 多層構造のゲート絶縁膜を含んだ有機薄膜トランジスタ
US7399668B2 (en) Method for making electronic devices having a dielectric layer surface treatment
JP4194436B2 (ja) 電界効果型有機トランジスタ
JP3994441B2 (ja) 電界効果トランジスタ
KR101151106B1 (ko) 유기 절연 고분자, 이를 이용하여 제조된 유기 절연층 및유기 박막 트랜지스터
JP2005317923A (ja) 有機アクセプタ膜を備えた有機薄膜トランジスタ
US7173140B2 (en) Process to form compound with indolocarbazole moieties
US7081640B2 (en) Organic semiconductor element having high insulation strength and fabrication method thereof
US20090253228A1 (en) Organic thin film transistor and method for manufacturing the same, and active matrix display and radio recognition tag using the same
KR20090061594A (ko) 박막 트랜지스터, 전기 광학 장치 및 전자 기기
US20120313081A1 (en) Electronic device
US20090159876A1 (en) Organic semiconductor material and organic field effect transistor
JP5023630B2 (ja) 有機半導体素子の製造方法
US7259392B2 (en) Organic thin film transistor array panel and manufacturing method thereof
JP5630364B2 (ja) 有機半導体素子の製造方法および有機半導体素子
JP2005158765A (ja) 電界効果型有機トランジスタおよびその製造方法
JP5370722B2 (ja) 有機電界効果トランジスタ
US20060102954A1 (en) Organic thin film transistor array panel and manufacturing method thereof
JP4700976B2 (ja) 電界効果型有機トランジスタの製造方法
JP5288826B2 (ja) 有機半導体素子及びその製造方法
JP7144210B2 (ja) 有機トランジスタ

Legal Events

Date Code Title Description
AS Assignment

Owner name: CANON KABUSHIKI KAISHA, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:UNNO, AKIRA;SATO, NAOTAKE;MIYAZAKI, HAJIME;AND OTHERS;REEL/FRAME:016982/0327;SIGNING DATES FROM 20050408 TO 20050414

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION