US20050221724A1 - Polishing apparatus and method of polishing a subject - Google Patents

Polishing apparatus and method of polishing a subject Download PDF

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Publication number
US20050221724A1
US20050221724A1 US11/088,786 US8878605A US2005221724A1 US 20050221724 A1 US20050221724 A1 US 20050221724A1 US 8878605 A US8878605 A US 8878605A US 2005221724 A1 US2005221724 A1 US 2005221724A1
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US
United States
Prior art keywords
polishing
abrasive cloth
polishing solution
subject
rotary table
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/088,786
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English (en)
Inventor
Takahiro Terada
Masaomi Nakahata
Yasutada Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Individual
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Filing date
Publication date
Application filed by Individual filed Critical Individual
Assigned to KABUSHIKI KAISHA TOSHIBA reassignment KABUSHIKI KAISHA TOSHIBA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NAKAHATA, MASAOMI, NAKAGAWA, YASUTADA, TERADA, TAKAHIRO
Publication of US20050221724A1 publication Critical patent/US20050221724A1/en
Abandoned legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • This invention relates to a polishing apparatus and a method of polishing a subject, in particular, to a polishing apparatus using chemical mechanical polishing (CMP) method and a method of polishing a subject using the CMP method.
  • CMP chemical mechanical polishing
  • FIGS. 10 and 11 show methods to supply a polishing solution to an abrasive cloth bonded on a rotary table.
  • a subject to be polished is arranged on the abrasive cloth.
  • FIG. 10 is a schematic diagram of a polishing apparatus shown in FIG. 7 of Japanese Patent Disclosure (kokai) No. 07-156063.
  • the polishing apparatus is provided with a pump 73 to supply a polishing solution 72 contained in a container 71 onto an abrasive cloth 76 bonded on a top surface of a rotary table 75 .
  • a wafer W on abrasive cloth 76 is polished by the supplied polishing solution 72 .
  • a funnel 77 receives polishing solution 72 driven off the surface of rotary table 75 by a centrifugal force.
  • the received polishing solution 72 is drained as waste liquid 78 without circulating.
  • FIG. 11 shows another polishing apparatus shown in FIG. 1 of the same Japanese Patent Disclosure.
  • the polishing apparatus is provided with a plate 2 directing toward a rotational center 3 of a rotary table 1 , in order to let a polishing solution flow toward rotational center 3 , which polishing solution would have been driven off the surface of the rotary table 1 without plate 2 .
  • plate 2 dams up the polishing solution and exerts force in a radially inward direction of rotary table 1 on the dammed polishing solution.
  • the method of supplying polishing solution 72 shown in FIG. 10 is expensive since almost all of the polishing solution 72 supplied onto the surface of abrasive cloth 76 is driven off without being used for the polishing. Then, the actual amount of polishing solution 72 supplied between wafer W and abrasive cloth 76 is quite limited. In other words, an application efficiency of polishing solution 72 is so low that a cost of a polishing process becomes high.
  • the polishing apparatus shown in FIG. 11 is also not efficient since the apparatus does not have a distinguished polishing rate.
  • the apparatus comprises an abrasive cloth, a table to rotate the abrasive cloth, a holder configured to hold a subject to be polished against the abrasive cloth, and a discharger to discharge a polishing solution from the abrasive cloth after the polishing solution passes between the abrasive cloth and the subject.
  • an abrasive cloth includes a polishing pad ,and a table includes a rotary table or a platen, and a holder includes top ring or polishing head or wafer carrier.
  • FIG. 1 is a schematic diagram of a polishing apparatus 100 .
  • FIG. 2 is a schematic plan view of a rotary table 1 of polishing apparatus 100 .
  • FIG. 3 is a drawing to define an angle of a plate 6 .
  • FIG. 4 shows a relation between a kind of a slurry and a pH value.
  • FIG. 5 shows a relation between a pH value and a polishing rate.
  • FIG. 6 shows a relation between a flow rate and a polishing rate.
  • FIG. 7 is a schematic diagram of a polishing apparatus 200 .
  • FIG. 8 is a schematic diagram of a polishing apparatus 300 .
  • FIG. 9 is a schematic diagram of a polishing apparatus 400 .
  • FIG. 10 is a schematic diagram of a conventional polishing apparatus.
  • FIG. 11 is a plan view of a rotary table 1 of another conventional polishing apparatus.
  • FIGS. 1 to 6 A first embodiment consistent with the present invention is explained with reference to FIGS. 1 to 6 .
  • the inventors of the present invention have identified that a pH value of a used slurry (a used polishing solution) is lower than that of an unused slurry, and that a polishing rate deteriorates with a lowering of a pH value of a slurry.
  • the inventors have concluded that reducing slurry consumption only by circulating a used slurry is of limited value.
  • a used slurry is not tried to be accumulated or maintained on a surface of an abrasive cloth but willingly discharged from the surface of the abrasive cloth.
  • FIG. 1 shows a schematic diagram of a polishing apparatus 100 .
  • Polishing apparatus 100 is provided with a rotary table 9 (table) rotated by a motor (not shown), an abrasive cloth 1 bonded on the top surface of rotary table 9 and a top ring 2 (holder) to hold and rotate a subject to be polished such as a semiconductor wafer. Top ring 2 is movably arranged. Polishing apparatus 100 is also provided with a polishing solution supplying mechanism 3 to supply a polishing solution onto abrasive cloth 1 , and a plate 6 (discharger) to dam up a used polishing solution and discharge it off abrasive cloth 1 .
  • a first arm 20 supports supplying mechanism 3 arranged above abrasive cloth 1 .
  • a second arm 22 whose position and angle are changeable secures plate 6 above abrasive cloth 1 on rotary table 9 .
  • a third arm 24 supports top ring 2 which rotates on its axis.
  • Plate 6 may made of polycarbonate or fluorocarbon resin which are alcaliproof. However, other materials can be substituted. When worn, plate 6 can be replaced.
  • a flat plate or a curbed plate may be used. Further, a circular plate, a spiral plate or a plurality of flat plates may be used.
  • an absorber to absorb a used polishing solution off abrasive cloth 1 or a blower to blow high-pressured air in a radially outward direction of the rotary table to blow a used polishing solution may be used instead of plate 6 .
  • a suction unit to suck in a used polishing solution on abrasive cloth 1 may be used.
  • Other ways to discharge a used polishing solution from the surface of abrasive cloth 1 may be substituted for plate 6 .
  • polishing apparatus 100 An operation of polishing apparatus 100 will be explained next.
  • a polishing solution is supplied onto a dripping position (supplying position) of abrasive cloth 1 while rotary table 9 with abrasive cloth 1 rotates.
  • Plate 6 is arranged above abrasive cloth 1 in advance.
  • Top ring 2 holding the subject to be polished rotates. Thus, the subject is polished.
  • FIG. 2 shows a current direction of the polishing solution (slurry) on abrasive cloth 1 .
  • a side wall of plate 6 facing top ring 2 is defined as an A-side ( FIG. 2 ), and the other side wall facing the dripping position is defined as a B-side in this embodiment.
  • plate 6 is arranged on an upstream side of the supplying position of the polishing solution, and arranged on a downstream side of top ring 2 so that plate 6 can effectively discharge the used polishing solution.
  • an inclination of plate 6 which has a flat wall, is defined as an angle with reference to a plane which passes through the rotational axes of both the rotary table 9 and the center of the top ring 2 , assuming the clockwise rotation viewed from the top face of rotary table 9 is positive.
  • plate 6 is aligned with the angle ⁇ ranging from ⁇ 10 through ⁇ 90 degrees.
  • the surface of abrasive cloth 1 has two areas divided by the line passing through the center of both the top ring 2 and the rotary table 9 .
  • the plate 6 is arranged so as to be substantially involved in the other area in a plan view.
  • a plane which passes through the rotational axes of both rotary table 9 and top ring 2 separates a region where almost all of plate 6 is involved from the other region where the dripping position is involved.
  • FIG. 5 shows a relation between a kind of a slurry and a pH value.
  • the pH value of the unused slurry is the highest; a pH value of the used slurry is the lowest; and the slurry in this embodiment is median.
  • FIG. 4 shows pH values of an unused slurry, a repeatedly used slurry and a slurry on abrasive cloth 1 in this embodiment.
  • a polishing rate improves as a pH value becomes high. Therefore, a pH value of a slurry on abrasive cloth 1 is maintained to keep a high polishing value by discharging the used slurry from abrasive cloth 1 . Consequently, the polishing rate of the slurry in this embodiment is superior to that of the used slurry.
  • FIG. 6 shows a relation between a flow rate of a slurry and a polishing rate.
  • a 100% polishing rate is equal to a polishing rate accomplished by the conventional method using a 100% flow rate.
  • the flow rate can be reduced by 70% without deteriorating the polishing rate.
  • a second embodiment is shown with reference to FIG. 7 .
  • An absorber to absorb used polishing solution is used instead of plate 6 .
  • a material having a permeability and a porosity such as a sponge, may be used.
  • a compression roller 12 squeezes the polishing solution absorbed by a sponge roller 11 to discharge the used polishing solution from the surface of abrasive cloth 1 .
  • the squeezed out polishing solution is drained with a trough 13 . While squeezing, both the sponge roller 11 and the compression roller 12 rotate.
  • a third embodiment is shown with reference to FIG. 8 .
  • a suction nozzle suction unit instead of plate 6 may be used to remove used polishing solution.
  • a fourth embodiment is described next with reference to FIG. 9 .
  • High-pressured air instead of plate 6 may be used.
  • An air nozzle 16 (blower) blows used slurry off abrasive cloth 1 .
  • Other means to discharge a used slurry from abrasive cloth 1 may be used.
  • an unused slurry can be recirculated and reused.
  • plate 6 both discharges a used slurry and circulates an unused slurry.
  • a polishing solution includes a fluid or a liquid containing an abrasive.
US11/088,786 2004-03-25 2005-03-25 Polishing apparatus and method of polishing a subject Abandoned US20050221724A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004-089296 2004-03-25
JP2004089296A JP2005271151A (ja) 2004-03-25 2004-03-25 研磨装置及び研磨方法

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US20050221724A1 true US20050221724A1 (en) 2005-10-06

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US11/088,786 Abandoned US20050221724A1 (en) 2004-03-25 2005-03-25 Polishing apparatus and method of polishing a subject

Country Status (6)

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US (1) US20050221724A1 (ja)
EP (1) EP1579956A3 (ja)
JP (1) JP2005271151A (ja)
KR (1) KR100687115B1 (ja)
CN (1) CN1672876A (ja)
TW (1) TW200531793A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110186175A1 (en) * 2010-01-29 2011-08-04 Gabriel William Dobo Funnel accessory and drainage assembly for faceting machine
US10950469B2 (en) 2018-03-15 2021-03-16 Toshiba Memory Corporation Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
US10967483B2 (en) 2016-06-24 2021-04-06 Applied Materials, Inc. Slurry distribution device for chemical mechanical polishing
CN113021173A (zh) * 2019-12-24 2021-06-25 株式会社荏原制作所 研磨单元、基板处理装置及研磨方法
US11465256B2 (en) 2018-08-06 2022-10-11 Ebara Corporation Apparatus for polishing and method for polishing
US11612983B2 (en) 2017-04-11 2023-03-28 Ebara Corporation Polishing apparatus and polishing method
US11642755B2 (en) 2018-08-06 2023-05-09 Ebara Corporation Apparatus for polishing and method for polishing

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US8172641B2 (en) * 2008-07-17 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. CMP by controlling polish temperature
US8133097B2 (en) * 2009-05-07 2012-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing apparatus
TWI613037B (zh) 2011-07-19 2018-02-01 荏原製作所股份有限公司 硏磨方法
CN103286693A (zh) * 2013-05-31 2013-09-11 上海集成电路研发中心有限公司 研磨液分配臂
JP6307428B2 (ja) * 2014-12-26 2018-04-04 株式会社荏原製作所 研磨装置およびその制御方法
CN106379856B (zh) * 2016-11-14 2017-07-21 大连理工大学 一种基于雾化颗粒的水溶解微纳加工装置
CN106607765A (zh) * 2017-01-19 2017-05-03 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） 一种紧凑型可调节的抛光液输送臂及其工作工程
JP2019029562A (ja) * 2017-08-01 2019-02-21 株式会社荏原製作所 基板処理装置
KR102037747B1 (ko) * 2018-01-08 2019-10-29 에스케이실트론 주식회사 웨이퍼 연마 장치
TWI639486B (zh) * 2018-05-31 2018-11-01 國立清華大學 全向整合式調節裝置
CN109562505A (zh) 2018-10-24 2019-04-02 长江存储科技有限责任公司 具有刮擦固定装置的化学机械抛光设备
CN109159020B (zh) * 2018-10-26 2021-05-11 长江存储科技有限责任公司 研磨装置
CN110712113A (zh) * 2019-10-23 2020-01-21 东旭科技集团有限公司 一种曲面玻璃抛光机及其在线监测及调整方法
KR102343032B1 (ko) * 2020-03-09 2021-12-24 동명대학교산학협력단 스프레이 노즐을 활용한 연마장치에서 공기시스템을 이용한 연마입자 비산 방지시스템 및 제어방법
CN112677033B (zh) * 2020-12-03 2021-12-17 上海新昇半导体科技有限公司 一种抛光头、化学机械抛光装置和方法
CN114290229B (zh) * 2021-12-23 2023-02-24 北京通美晶体技术股份有限公司 一种半导体晶片的抛光方法及磷化铟晶片

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US6511365B2 (en) * 1999-05-28 2003-01-28 Fujitsu Limited Lapping machine
US20030068959A1 (en) * 2001-09-10 2003-04-10 Jiro Kajiwara Slurry distributor for chemical mechanical polishing apparatus and method of using the same
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US7040967B2 (en) * 2004-01-26 2006-05-09 Tbw Industries Inc. Multi-step, in-situ pad conditioning system and method for chemical mechanical planarization

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US6409577B1 (en) * 1996-05-21 2002-06-25 Micron Technology, Inc. Method for conditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers
US6039635A (en) * 1997-08-29 2000-03-21 Nec Corporation Surface polishing apparatus including a dresser
US6241587B1 (en) * 1998-02-13 2001-06-05 Vlsi Technology, Inc. System for dislodging by-product agglomerations from a polishing pad of a chemical mechanical polishing machine
US6093088A (en) * 1998-06-30 2000-07-25 Nec Corporation Surface polishing machine
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US6511365B2 (en) * 1999-05-28 2003-01-28 Fujitsu Limited Lapping machine
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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110186175A1 (en) * 2010-01-29 2011-08-04 Gabriel William Dobo Funnel accessory and drainage assembly for faceting machine
US8469064B2 (en) * 2010-01-29 2013-06-25 Gabriel William Dobo Funnel accessory and drainage assembly for faceting machine
US10967483B2 (en) 2016-06-24 2021-04-06 Applied Materials, Inc. Slurry distribution device for chemical mechanical polishing
US11077536B2 (en) 2016-06-24 2021-08-03 Applied Materials, Inc. Slurry distribution device for chemical mechanical polishing
US11806835B2 (en) 2016-06-24 2023-11-07 Applied Materials, Inc. Slurry distribution device for chemical mechanical polishing
US11612983B2 (en) 2017-04-11 2023-03-28 Ebara Corporation Polishing apparatus and polishing method
US10950469B2 (en) 2018-03-15 2021-03-16 Toshiba Memory Corporation Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
US11465256B2 (en) 2018-08-06 2022-10-11 Ebara Corporation Apparatus for polishing and method for polishing
US11642755B2 (en) 2018-08-06 2023-05-09 Ebara Corporation Apparatus for polishing and method for polishing
CN113021173A (zh) * 2019-12-24 2021-06-25 株式会社荏原制作所 研磨单元、基板处理装置及研磨方法
EP3842182A1 (en) * 2019-12-24 2021-06-30 Ebara Corporation Polishing unit, substrate processing apparatus, and polishing method
US11890716B2 (en) 2019-12-24 2024-02-06 Ebara Corporation Polishing unit, substrate processing apparatus, and polishing method

Also Published As

Publication number Publication date
KR100687115B1 (ko) 2007-02-27
JP2005271151A (ja) 2005-10-06
EP1579956A2 (en) 2005-09-28
CN1672876A (zh) 2005-09-28
EP1579956A3 (en) 2006-04-05
KR20060044661A (ko) 2006-05-16
TW200531793A (en) 2005-10-01

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Owner name: KABUSHIKI KAISHA TOSHIBA, JAPAN

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