US20050006348A1 - Method and apparatus for processing a substrate with rinsing liquid - Google Patents

Method and apparatus for processing a substrate with rinsing liquid Download PDF

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Publication number
US20050006348A1
US20050006348A1 US10/881,235 US88123504A US2005006348A1 US 20050006348 A1 US20050006348 A1 US 20050006348A1 US 88123504 A US88123504 A US 88123504A US 2005006348 A1 US2005006348 A1 US 2005006348A1
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United States
Prior art keywords
rinsing liquid
substrate
rinsing
pure water
nitrogen
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Abandoned
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US10/881,235
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English (en)
Inventor
Katsuhiko Miya
Akira Izumi
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Dainippon Screen Manufacturing Co Ltd
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Dainippon Screen Manufacturing Co Ltd
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Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Assigned to DAINIPPON SCREEN MFG. CO., LTD. reassignment DAINIPPON SCREEN MFG. CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: IZUMI, AKIRA, MIYA, KATSUHIKO
Publication of US20050006348A1 publication Critical patent/US20050006348A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0075—Cleaning of glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Definitions

  • the present invention relates to a substrate processing method and a substrate processing apparatus which require that rinsing is performed with supply of rinsing liquid to various types of substrates (hereinafter referred to simply as “substrate(s)”) such as semiconductor wafers, glass substrates for photo masks, glass substrates for liquid crystal displays, glass substrates for plasma displays and optical disk substrates.
  • substrate(s) such as semiconductor wafers, glass substrates for photo masks, glass substrates for liquid crystal displays, glass substrates for plasma displays and optical disk substrates.
  • Steps of manufacturing electronic components for a semiconductor device, a liquid crystal display device or the like include a step of repeatedly executing processing such as film deposition and etching on a surface of a substrate to thereby form shrinking-patterns. It is necessary to keep the surface of the substrate clean for favorable processing, and therefore, the substrate is cleaned when needed.
  • processing liquid which is suitable to cleaning, namely, cleaning liquid
  • the processing liquid remaining on the substrate surface is removed through rinsing which uses pure water as rinsing liquid.
  • the substrate is rotated at a high speed, drained off of the rinsing liquid remaining on the substrate surface and dried.
  • the rinsing liquid is gushed out toward the substrate surface from a rinsing nozzle and the rinsing liquid is exposed to air as soon as it gets ejected from the nozzle. Because of this, even when the concentration of dissolved oxygen in the rinsing liquid has already been lowered through the deaeration in advance, oxygen contained in air gets dissolved in the rinsing liquid immediately after injection of the rinsing liquid from the nozzle, and the concentration of dissolved oxygen in the rinsing liquid rapidly increases. Further, oxygen within air gets dissolved in the rinsing liquid not only right after injection of the rinsing liquid from the nozzle.
  • a primary object of the present invention is to provide a substrate processing method and a substrate processing apparatus with which it is possible to suppress build-up of an oxide film on the substrate which would otherwise caused by dissolved oxygen contained in the rinsing liquid.
  • the present invention is directed to a method and an apparatus for processing a substrate.
  • the method comprises: a wet processing step of supplying processing liquid to a substrate and subjecting the substrate to predetermined wet processing; a rinsing liquid producing step of adding nitrogen to pure water and producing rinsing liquid; and a rinsing step of supplying the rinsing liquid to the substrate after the wet processing step and rinsing the substrate with the rinsing liquid.
  • the apparatus comprises: a rinsing liquid producer which adds nitrogen to pure water and produces nitrogen-rich rinsing liquid; and a rinsing unit, including a nozzle, which discharges the rinsing liquid supplied from the rinsing liquid producer toward the substrate, thus supplies the rinsing liquid to the substrate and rinses the substrate.
  • the rinsing liquid which is pure water rich with nitrogen is produced.
  • the substrate is rinsed as this rinsing liquid is injected toward the substrate. Since a rich amount of nitrogen has been added to the pure water to produce the rinsing liquid, the concentration of dissolved oxygen in the rinsing liquid is lowered. As soon as supplied toward the substrate, the rinsing liquid gets exposed to air starts and the concentration of dissolved oxygen rises. However, added nitrogen suppresses a speed at which the concentration increases.
  • the concentration of dissolved oxygen in the rinsing liquid would not rapidly increase during a period (about thirty seconds, for instance) from the start of injection of the rinsing liquid toward the substrate until removal of the rinsing liquid off from the substrate, thereby suppressing build-up of an oxide film on the substrate which would otherwise occur owing to dissolved oxygen in the rinsing liquid.
  • FIG. 1 is a cross sectional view which shows the structure of a substrate processing apparatus as a whole according to a first embodiment of the present invention
  • FIG. 2 is a block diagram which shows the structure of control executed in the substrate processing apparatus of FIG. 1 ;
  • FIG. 3 is a flow chart which shows operations of the substrate processing apparatus of FIG. 1 ;
  • FIG. 4 is a drawing which shows a relationship between the concentration of dissolved oxygen and time
  • FIG. 5 is a conceptual view which shows how rinsing liquid stays from nitrogen dissolving units to nozzle outlets
  • FIG. 6 is a drawing which shows the structure of a substrate processing apparatus according to a second embodiment of the present invention.
  • FIG. 7 is a schematic drawing which shows the structure of a substrate processing apparatus according to a third embodiment of the present invention.
  • FIG. 1 is a cross sectional view which shows the structure of a substrate processing apparatus as a whole according to a first embodiment of the present invention.
  • FIG. 2 is a block diagram which shows the structure of control executed in the substrate processing apparatus of FIG. 1 .
  • a substrate W as it is held by a spin chuck 1 is subjected to film removal processing, rinsing and drying inside the same processing unit main section 101 .
  • the spin chuck 1 comprises a disk-shaped base member 2 , which also serves as a blocking member disposed on the back surface side of the substrate, and three or more holding members 3 which are formed on the top surface of the base member 2 .
  • Each one of the holding members 3 comprises a support part 3 a , which receives and supports the substrate W from below at an outer peripheral portion of the substrate W, and a restriction part 3 b which restricts the position of the outer edge of the substrate W.
  • These holding members 3 are disposed in the vicinity of an outer peripheral portion of the base member 2 .
  • Each restriction part 3 b has such a structure that the restriction part 3 b can be in an activated state for contacting the outer edge of the substrate W and holding the substrate W and a non-activated state for moving away from the outer edge of the substrate W and releasing the substrate W.
  • the restriction parts 3 b permits a transportation robot (not shown) load in the substrate W toward the support parts 3 a and unload the substrate W out from the support parts 3 a .
  • each restriction part 3 b switches to the activated state and the spin chuck 1 holds the substrate W.
  • This operation of the holding members 3 can be realized using a link mechanism described in the Japanese Patent Application Laid-Open Gazette No. S63-153839 for example, etc.
  • a top end portion of a rotation shaft 4 is attached to the bottom surface of the base member 2 .
  • a pulley 5 a is fixed to a bottom end portion of the rotation shaft 4 .
  • Rotation force of a motor 5 is thus transmitted to the rotation shaft 4 via a belt 5 c which stretches around this pulley 5 a and another pulley 5 b which is fixed to a rotation shaft of the motor 5 . Therefore, as the motor 5 rotates, the substrate W held by the spin chuck 1 rotates about the center of the substrate W.
  • a nozzle 6 disposed to a central portion of the base member 2 .
  • the nozzle 6 is connected with a liquid supplier 50 which supplies processing liquid, rinsing liquid or the like to the back surface of the substrate through a pipe 7 which is internally connected along the central axis of a hollow rotation shaft 4 and through a pipe 8 .
  • the structure and operations of the liquid supplier 50 will be described in detail later.
  • the opening 16 is formed in the central portion of the base member 2 in such a manner that the opening 16 is coaxial with the nozzle 6 .
  • the opening 16 is communicated with a gas supplier 20 through a hollow section 17 and a pipe 19 .
  • the hollow section 17 is disposed coaxially with the pipe 7 inside the rotation shaft 4 .
  • a shut-off valve 18 is interposed in the pipe 19 .
  • inert gas such as nitrogen gas
  • the base member 2 which functions as “atmosphere blocker” of the present invention and the back surface of the substrate W so that the space between the base member 2 and the back surface of the substrate W can therefore be purged into an inert gas atmosphere.
  • a blocking member 21 which functions as the “atmosphere blocker” of the present invention is disposed above the spin chuck 1 .
  • the blocking member 21 is attached to a bottom end portion of a suspension arm 22 which is disposed along the vertical direction.
  • a motor 23 is disposed to a top end portion of the suspension arm 22 so that when the motor 23 is driven, the blocking member 21 rotates about the suspension arm 22 .
  • the rotation shaft core of the rotation shaft 4 of the spin chuck 1 coincides with the rotation shaft core of the suspension arm 22 , allowing that the base member 2 serving as the atmosphere blocker, the blocking member 21 and the substrate W which is held by the spin chuck 1 coaxially rotate.
  • the motor 23 rotates the blocking member 21 in the same direction at about the same rotation speed as (the substrate W which is held by) the spin chuck 1 .
  • the nozzle 25 is connected with a liquid supplier 70 which supplies processing liquid, rinsing liquid or the like to the surface of the substrate through a pipe 26 which is internally connected along the central axis of the hollow suspension arm 22 and through a pipe 27 .
  • the structure and operations of the liquid supplier 70 will be described in detail later.
  • the opening 35 is formed in the central portion of the blocking member 21 in such a manner that the opening 35 is coaxial with the nozzle 25 .
  • the opening 35 is communicated with a gas supplier 39 through a hollow section 36 and a pipe 38 .
  • the hollow section 36 is disposed coaxially with the pipe 26 inside the suspension arm 22 .
  • a shut-off valve 37 is interposed in the pipe 38 .
  • inert gas such as nitrogen gas
  • the hollow sections 17 and 36 , the shut-off valves 18 and 37 , the pipes 19 and 38 and the gas suppliers 20 and 39 thus constitute “inert gas supplier.”
  • the liquid supplier 50 is disposed inside the processing unit main section 101 and comprises a hydrofluoric acid supply source 51 which supplies hydrofluoric acid and a nitrogen dissolving unit 58 .
  • the hydrofluoric acid supply source 51 is connected with a mixing unit 55 through a pipe 54 in which a shut-off valve 53 is interposed, while the a pure water supplier 200 which is disposed separately from the processing unit main section 101 is connected with an inlet of the nitrogen dissolving unit 58 through a pipe 201 .
  • the nitrogen dissolving unit 58 there is another inlet formed in the nitrogen dissolving unit 58 , and this inlet is connected with a nitrogen gas supply source not shown. Nitrogen gas from the nitrogen gas supply source is dissolved in pure water supplied from the pure water supplier 200 , thereby producing nitrogen-rich pure water.
  • the nitrogen dissolving unit 58 is connected with the mixing unit 55 through a pipe 57 in which a shut-off valve 56 is interposed. As the shut-off valves 53 and 56 are opened and closed in accordance with a control command fed from a controller 80 which controls the entire apparatus, hydrofluoric solution or pure water in which nitrogen has been dissolved is fed to the pipe 8 from the mixing unit 55 and the hydrofluoric solution or the pure water is selectively supplied toward the surface of the substrate W.
  • shut-off valves 53 and 56 when the shut-off valves 53 and 56 are all opened, hydrofluoric acid and pure water are supplied to the mixing unit 55 and the hydrofluoric solution having a predetermined concentration is prepared.
  • the hydrofluoric solution is gushed out at the nozzle 6 through the pipe 8 toward the back surface of the substrate W, and a film consequently adhering to the back surface of the substrate is removed through etching.
  • rinsing can be performed with the rinsing liquid, namely, the pure water in which nitrogen has been dissolved supplied at the nozzle 6 through the pipe 8 toward the back surface of the substrate W.
  • the pipes 7 and 8 and the nozzle 6 thus function as “rinsing unit” of the present invention
  • the nitrogen dissolving unit 58 functions as “rinsing liquid producer” of the present invention.
  • the nitrogen dissolving unit 58 a bubbling apparatus which uses a tank or a conventional apparatus which uses a hollow yarn is used.
  • the pipes 26 and 27 and the nozzle 25 thus function as the “rinsing unit” of the present invention
  • an oxygen dissolving unit 78 functions as the “rinsing liquid producer” of the present invention.
  • a cup 40 which prevents the processing liquid from splashing around is disposed around the spin chuck 1 .
  • the processing liquid collected by the cup 4 is discharged outside the apparatus, and although not shown, stored in a tank which is disposed below the cup 40 .
  • FIG. 3 is a flow chart which shows the operations of the substrate processing apparatus of FIG. 1 .
  • the transportation robot transports an unprocessed substrate W to the spin chuck 1 , and after the holding members 3 have held the substrate W (Step S 1 ), film removal processing, rinsing and drying are executed in this order with the respective portions of the apparatus controlled as described below by the controller 80 which controls the entire apparatus.
  • Step S 2 after positioning the blocking member 21 close to the surface of the substrate W which is held by the spin chuck 1 , with the substrate W held between the base member 2 and the blocking member 21 , the motor 5 is driven and starts and the substrate W is rotated together with the spin chuck 1 . Further, with the shut-off valves 53 , 73 , 56 and 76 all opened, hydrofluoric acid and pure water are supplied to the mixing units 55 and 75 , thereby preparing the hydrofluoric solution having a predetermined concentration and pressure-feeding the hydrofluoric solution to the nozzles 6 and 25 . Supply of the hydrofluoric solution to the both surfaces of the substrate W at the nozzles 6 and 25 is thus initiated (Step S 3 ). This starts removal of a film adhering to the both surfaces of the substrate W through etching.
  • Step S 4 of completion of the film removal processing Upon confirmation at Step S 4 of completion of the film removal processing, the shut-off valves 53 , 73 , 56 and 76 are all closed, and after stopping the supply of the hydrofluoric solution toward the substrate W at the nozzles 6 and 25 , the substrate W is rotated at a high speed and the hydrofluoric solution is spin-removed and discharged outside the apparatus.
  • Step S 5 As draining of the hydrofluoric solution thus ends (Step S 5 ), the shut-off valves 18 and 37 are opened and inert gas is supplied to the space between the base member 2 and the blocking member 21 .
  • the shut-off valves 56 and 76 After changing an atmosphere surrounding the substrate W to an inert gas atmosphere, the shut-off valves 56 and 76 are opened only for a certain period of time, the nitrogen-rich pure water is supplied as the rinsing liquid to the both major surfaces of the substrate W and the substrate W is rinsed (Step S 6 ).
  • the substrate W is kept rotating until the substrate W has dried. Upon drying of the substrate W, the rotating of the substrate W is stopped, the shut-off valves 18 and 37 are closed and the supply of the inert gas is stopped (Step S 7 ).
  • the blocking member 21 is moved away from the surface of the substrate W which is held by the spin chuck 1 , and after the holding members 3 have released the substrate, the transportation robot transports thus processed substrate W to the next substrate processing apparatus (Step S 8 ).
  • the preferred embodiment requires that nitrogen is dissolved in pure water and the nitrogen-rich rinsing liquid is accordingly produced immediately before the rinsing, and therefore, the preferred embodiment attains the following effects.
  • First it is possible to reduce the concentration of dissolved oxygen in the rinsing liquid.
  • the period e.g., about thirty seconds
  • the completion of the drying i.e., until the rinsing liquid has been removed from the substrate W
  • FIG. 4 shows how the concentration of dissolved oxygen increases with time in two types of pure water, one in which a very small amount of nitrogen has been dissolved (hereinafter referred to as “low nitrogen concentration water”)and the other in which nitrogen has been richly dissolved (hereinafter referred to as “high nitrogen concentration water”).
  • low nitrogen concentration water a very small amount of nitrogen has been dissolved
  • high nitrogen concentration water the other in which nitrogen has been richly dissolved
  • the symbol t 0 denotes the time at which the rinsing liquid is discharged out at the nozzles 6 and 25 (immediately after the two containers have been respectively filled up with the low nitrogen concentration water and the high nitrogen concentration water)
  • the symbol t 1 denotes the time at which the discharge of the rinsing liquid toward the substrate W at the nozzles 6 and 25 ends
  • the symbol t 2 denotes the time at which the drying completes (i.e., the time at which the rinsing liquid has been removed off from the substrate W).
  • the rinsing liquid remains on the substrate W during the rinsing of course, and additionally, until the subsequent drying has finished.
  • the concentration of dissolved oxygen in the rinsing liquid during the period until the end of the drying.
  • the speed at which the concentration of dissolved oxygen in the rinsing liquid increases is suppressed during the rinsing and the drying. This permits execution of the rinsing and the drying while maintaining a low level of dissolved oxygen in the rinsing liquid which is present on the substrate W and accordingly suppresses build-up of an oxide film on the substrate W.
  • the atmosphere surrounding the substrate W is turned to the inert gas atmosphere during execution of the rinsing and the drying, it is possible to reduce the amount of oxygen around the substrate which could be dissolved in the rinsing liquid. Hence, it is possible to further suppress an increase of the concentration of dissolved oxygen in the rinsing liquid during the period (e.g., about thirty seconds) from discharge of the rinsing liquid toward the substrate W at the nozzles until removal of the rinsing liquid off from the substrate W. As a result, build-up of an oxide film on the substrate W is more effectively suppressed.
  • the nitrogen dissolving units 58 and 78 are disposed inside the processing unit main section 101 , thereby shortening the paths which the rinsing liquid follows after produced by richly dissolving nitrogen in pure water before until discharged out at the nozzles 6 and 25 . For this reason, the rinsing liquid is supplied to the substrate W as soon as the rinsing liquid has been produced, which further effectively suppresses an increase of the concentration of dissolved oxygen in the rinsing liquid.
  • the nitrogen dissolving units 58 and 78 are preferably disposed such that one liter of the rinsing liquid or less will remain in the rinsing liquid paths from the nitrogen dissolving units 58 and 78 to the outlets of the nozzles 6 and 25 .
  • the nitrogen dissolving units 58 and 78 are preferably disposed such that 200 liters or less of the rinsing liquid will remain in the rinsing liquid paths from the nitrogen dissolving units 58 and 78 to the outlets of the nozzles 6 and 25 .
  • the ranges are determined by such an upper limit amount of the rinsing liquid which ensures that while nitrogen added to the produced rinsing liquid stays effective, the rinsing liquid can be all fed to the substrate W to rinse the substrate W and removed off from the substrate W.
  • the upper limit amount of the rinsing liquid will now be described in detail with reference to FIG. 5 .
  • FIG. 5 is a conceptual diagram which shows how the rinsing liquid remains from the oxygen dissolving units to the outlets of the nozzles.
  • the respective bars in the graph represent the states of the rinsing liquid in the rinsing liquid paths from the nitrogen dissolving units 58 and 78 (the right-hand end) to the outlets of the nozzles 6 and 25 (the left-hand end).
  • the time instances T 0 , T 1 , T 2 . . . appearing vertically denote the time at which processing of each substrate W starts when a plurality of substrates W are to be processed successively (during processing of the single wafer type).
  • the rinsing liquid U is discharged at the nozzles 6 and 25 (the left-hand end).
  • the rinsing liquid paths are replenished with the rinsing liquid L (T 1 ) newly produced in the nitrogen dissolving units 58 and 78 (the right-hand end).
  • the rinsing liquid U is discharged at the nozzles 6 and 25 (the left-hand end) and the rinsing liquid paths are replenished with the rinsing liquid L (T 2 ) which has been newly produced in the nitrogen dissolving units 58 and 78 (the right-hand end).
  • the inventor of the present invention comprehensively studied processing time required per substrate (i.e., a time interval between execution of rinsing of the previous substrate W and execution of rinsing of the next substrate W), the amount of the rinsing liquid used per substrate and duration of the effect of added nitrogen, based on various types of experiment data and the like.
  • the inventor of the present invention clarified that when the capacity of the rinsing liquid remaining in the rinsing liquid paths from the rinsing liquid producer to the outlets of the nozzles was 200 liters or less, while nitrogen added to the produced rinsing liquid stayed effective, the rinsing liquid would be all fed to a substrate W (a plurality of substrates W) to rinse the substrate W and removed off from the substrate W (the plurality of substrates W).
  • FIG. 6 is a drawing which shows the structure of a substrate processing apparatus according to a second embodiment of the present invention.
  • the apparatus of the second embodiment comprises deaeration units.
  • pure water supplied from utilities in a plant where the substrate processing apparatus 100 is installed is fed directly to the nitrogen dissolving units 58 and 78 to produce the rinsing liquid according to the first embodiment.
  • the second embodiment requires that immediately after deaeration of pure water in the deaeration units 59 and 79 , the pure water is supplied to the nitrogen dissolving units 58 and 78 to produce the rinsing liquid.
  • the deaeration units 59 and 79 are additionally disposed within the processing unit main section 101 .
  • the pure water in which the concentration of dissolved oxygen has dropped low by means of the deaeration performed in the deaeration units 59 and 79 is immediately supplied to the nitrogen dissolving units 58 and 78 , and therefore, the rinsing liquid having a lower concentration of dissolved oxygen than in the first embodiment is produced.
  • the series of substrate processing (the film removal processing, the rinsing and the drying) is executed in accordance with the operation sequence shown in FIG. 3 , thereby achieving similar effects to those according to the first embodiment.
  • the rinsing liquid having a lower concentration of dissolved oxygen than in the previous preferred embodiment is produced according to the second embodiment, build-up of an oxide film on the substrate W is more effectively suppressed.
  • the deaeration units 59 and 79 are disposed together with the nitrogen dissolving units 58 and 78 within the processing unit main section 101 , nitrogen is added after the deaeration of the pure water and the rinsing liquid is consequently produced, whereby the paths for the rinsing liquid until discharge at the nozzles 6 and 25 are shortened.
  • produced rinsing liquid is supplied to the substrate W quickly, and an increase of the concentration of dissolved oxygen in the rinsing liquid is more effectively suppressed.
  • the capacity of the rinsing liquid remaining in the rinsing liquid paths from the deaeration units 59 and 79 respectively to the outlets of the nozzles 6 and 25 is one liter or less.
  • the deaeration units 59 and 79 are preferably disposed such that the capacity of the rinsing liquid remaining in the rinsing liquid paths from the deaeration units 59 and 79 respectively to the outlets of the nozzles 6 and 25 will be 200 liters or less.
  • FIG. 7 is a schematic drawing which shows the structure of a substrate processing apparatus according to a third embodiment of the present invention.
  • a major difference of the third embodiment from the first embodiment is of the unit arrangement. While the nitrogen dissolving unit 58 ( 78 ) is disposed within the processing unit main section 101 according to the first embodiment, the third embodiment requires that the nitrogen dissolving unit 58 ( 78 ) is disposed outside the processing unit main section 101 . To be more specific, the nitrogen dissolving unit 58 ( 78 ) is interposed in the utility line (pipe 201 ) of a plant which links pure water supplier 200 to the processing unit main section 101 .
  • the nitrogen dissolving unit 58 ( 78 ) may be freely determined.
  • the pure water supplier 200 will now be described in detail with reference to FIG. 7 .
  • the pure water supplier 200 comprises a pure water supply source 200 a for supplying pure water and a circulation path 200 b for returning pure water which has come from the pure water supply source 200 a back to the pure water supply source 200 a and accordingly circulating the pure water.
  • the pure water circulating in the circulation path 200 b is deaerated in a deaeration facility (not shown) and the concentration of dissolved oxygen in the pure water consequently decreases.
  • the nitrogen dissolving unit 58 ( 78 ) is disposed outside the processing unit main section 101 according to the third embodiment. Hence, the nitrogen dissolving unit 58 ( 78 ) adds an abundant amount of nitrogen to the pure water, and an increase of the concentration of dissolved oxygen in the pure water arriving at the processing unit main section 101 is suppressed.
  • the nitrogen dissolving unit 58 ( 78 ) is disposed right behind the branching from the circulation path 200 b where oxygen could be dissolved in the pure water in this regard, considering the duration of the effect of added nitrogen, it is equally desirable that the nitrogen dissolving unit 58 ( 78 ) is disposed such that the capacity of the rinsing liquid remaining in the rinsing liquid path from the nitrogen dissolving unit 58 ( 78 ) to the outlet of the nozzle 6 ( 25 ) will be 200 liters or less.
  • the deaeration unit 59 ( 79 ) may be additionally disposed and the pure water as it is immediately after deaerated in the deaeration unit 59 ( 79 ) may be supplied to the nitrogen dissolving unit 58 ( 78 ) to produce the rinsing liquid.
  • the deaeration unit 59 ( 79 ) is preferably disposed such that the capacity of the rinsing liquid remaining in the rinsing liquid paths from the deaeration unit 59 ( 79 ) to the outlets of the nozzle 6 ( 25 ) will be 200 liters or less.
  • the present invention is not limited to the preferred embodiments above, but may be modified in various manners in addition to the preferred embodiments above, to the extent not deviating from the object of the invention.
  • the embodiments described above require that the both surfaces of a substrate W are processed through the series of processing, the present invention is applicable to a substrate processing apparatus in which only one surface is subjected to substrate processing.
  • hydrofluoric solution is supplied to a substrate W as the processing liquid and the substrate is wet-processed in the preferred embodiments above.
  • the present invention may be applied to a substrate processing apparatus in which other processing liquid than this (such as cleaning liquid or developing liquid) is supplied to a substrate and the substrate is processed through predetermined wet processing (such as washing and development).
  • the present invention is applicable generally to such substrate processing apparatuses in which rinsing liquid is supplied to substrates and the substrates are rinsed.
  • the rinsing liquid as it has been produced is supplied to a substrate W for rinsing in the preferred embodiments above, the rinsing may be performed using such rinsing liquid which has been mixed with hydrofluoric acid and accordingly has a PH value of 6 or smaller.
  • Use of such rinsing liquid effectively prevents oxidation (creation of a water mark).
  • the shut-off valve 56 is opened and the shut-off valve 53 is adjusted during rinsing, whereby a predetermined amount of hydrofluoric acid is added to the rinsing liquid.
  • the rinsing liquid is thus controlled to a predetermined PH value.
  • the PH value may be controlled not necessarily after producing the rinsing liquid but also before addition of nitrogen to pure water.
  • acid used for control of the PH value of the rinsing liquid is not limited to hydrofluoric acid. Hydrochloric acid may be used instead, for instance.
  • the rinsing liquid is produced using ultrapure water instead of using pure water.

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JP2003192569 2003-07-07
JP2003-192569 2003-07-07
JP2004-091700 2004-03-26
JP2004091700A JP2005045206A (ja) 2003-07-07 2004-03-26 基板処理方法および基板処理装置

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030194878A1 (en) * 2002-04-10 2003-10-16 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and method
US20080295868A1 (en) * 2007-06-04 2008-12-04 Hitachi Kokusai Electric Inc. Manufacturing method of a semiconductor device and substrate cleaning apparatus
US20090023231A1 (en) * 2006-02-01 2009-01-22 Tohoku University Semiconductor Device Manufacturing Method and Method for Reducing Microroughness of Semiconductor Surface
US20090149017A1 (en) * 2004-08-26 2009-06-11 Renesas Technology Corp. Method of cleaning semiconductor substrate, and method of manufacturing semiconductor device and semiconductor substrate processing apparatus for use in the same
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