US20040226815A1 - Plasma processing apparatus and control method thereof - Google Patents

Plasma processing apparatus and control method thereof Download PDF

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Publication number
US20040226815A1
US20040226815A1 US10/846,643 US84664304A US2004226815A1 US 20040226815 A1 US20040226815 A1 US 20040226815A1 US 84664304 A US84664304 A US 84664304A US 2004226815 A1 US2004226815 A1 US 2004226815A1
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electrode
plasma processing
plasma
high frequency
frequency power
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Akira Koshiishi
Masatoshi Kitano
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of US20040226815A1 publication Critical patent/US20040226815A1/en
Priority to US12/031,531 priority Critical patent/US8048327B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Definitions

  • the present invention relates to a plasma processing apparatus for performing a plasma processing such as an etching and the like on an object to be processed, e.g., a semiconductor wafer, and a control method thereof.
  • a plasma processing apparatus using a high frequency glow discharge of a reaction gas (a processing gas) introduced into a processing chamber has been widely used in order to perform microprocessing on a surface of an object to be processed, e.g., a semiconductor wafer (hereinafter, referred to as a “wafer”).
  • a reaction gas a processing gas
  • the so-called parallel plate plasma processing apparatus in which electrodes are opposedly arranged to face each other at an upper and a lower portions of the processing chamber is appropriate for processing of a large diameter wafer.
  • the parallel plate plasma etching processing apparatus has elevatable upper and lower electrodes arranged parallel to each other in a processing chamber.
  • the lower electrode also serves as a mounting table of a wafer.
  • high frequency powers having different frequencies are respectively applied to the upper electrode and the lower electrode, a glow discharge is generated between the lower electrode on which the wafer is loaded and the upper electrode, so that the reaction gas introduced into the processing chamber becomes plasma.
  • Ions of the plasma collide against a surface of the wafer due to an electric potential difference generated between the electrodes, thereby etching a film, e.g., an insulating film, formed on the wafer surface.
  • a focus ring surrounding the wafer loaded on top of the lower electrode and a shield ring are arranged, respectively.
  • the plasma generated between the upper and the lower electrodes is converged on the wafer, and, accordingly, the plasma density above the wafer surface becomes uniform.
  • reaction gases for forming or removing films are introduced into the processing chamber of the plasma processing apparatus. Although it is desirable that the reaction gases react completely as intended, parts of the reaction gases are discharged out of the processing chamber without having any reaction and parts of the reaction gases generate undesirable reaction by-products. Further, such reaction by-products adhere to various portions of the processing chamber. Hereinafter, the undesirable reaction by-products adhered to the processing chamber are referred to as “deposits”.
  • the deposits can be removed by cleaning the processing chamber of the plasma processing apparatus. However, once the plasma processing apparatus starts operation and repeats plasma processing on wafers, new deposits are generated and gradually accumulated in the processing chamber.
  • the deposits may cause an abnormal discharge soon after a plasma ignition. Consequently, subsequent film deposition or film removing process may not be appropriately carried out. Further, an emergency stop of the plasma processing apparatus may be required to clean the processing chamber.
  • Japanese Patent Laid-open Publication No. 1995-58028 discloses a substrate mounting table of an ECR-CVD apparatus in which an electrode and its surrounding region are fixed on a base plate.
  • the surrounding region of the electrode is made of aluminum oxide and the like and, further, fixed on the base plate, so that it acquires rigidity, acid resistance and insulating property. Therefore, by repeatedly cleaning the surrounding region of the electrode, it is possible to maintain same in a clean state free of the deposits. Further, a time required to clean the surrounding region of the electrode can be shortened.
  • a plasma processing apparatus for processing an object to be processed by generating a plasma in a processing chamber, including a first electrode installed in the processing chamber, a second electrode arranged to face the first electrode in the processing chamber, a first power system including a first power supply for supplying a first power to the first electrode, a second power system including a second power supply for supplying a second power to the second electrode, and a control unit for controlling the first and the second power systems, wherein the control unit controls both or either one of the first and the second power systems so as to apply a preprocessing voltage for a time period before plasma processing is performed on the object in the processing chamber, the preprocessing voltage being higher than a voltage applied to the second electrode during the plasma processing of the object.
  • a control method of a plasma processing apparatus which includes a first electrode arranged in a processing chamber, a second electrode arranged to face the first electrode in the processing chamber, a first power supply for supplying a first power to the first electrode and a second power supply for supplying a second power to the second electrode, wherein a preprocessing voltage is applied to the second electrode for a time period before plasma processing is performed on an object to be processed in the processing chamber, the preprocessing voltage being higher than a voltage applied to the second electrode during the plasma processing of the object.
  • the preprocessing voltage of an appropriate level it is possible to remove the deposits accumulated inside the processing chamber, especially, around the peripheral portion of the second electrode. If the preprocessing voltage to the second electrode is set to be applied before the beginning of the plasma processing performed on an object to be processed, the plasma processing can be performed on the object in the processing chamber which is free of deposits.
  • the preprocessing voltage applied to the second electrode can be easily generated by adjusting reactances of both or either one of a first matching unit and a second matching unit, the first matching unit matching impedances of a first power supply side and a first electrode side and the second matching unit matching impedances of a second power supply side and a second electrode side. Further, the preprocessing voltage applied to the second electrode can be generated by adjusting power levels and output timings of the first and the second powers respectively outputted from the first and the second power supplies.
  • a control method of a plasma processing apparatus which has a first electrode arranged in a processing chamber, a second electrode arranged to face the first electrode in the processing chamber, a first power supply for supplying a first power to the first electrode and a second power supply for supplying a second power to the second electrode
  • the control method including the steps of: performing a plasma processing process on an object to be processed under a first plasma forming condition by generating a plasma in the processing chamber by applying respective high frequency powers to the electrodes; and performing, prior to the above step, a plasma processing preparation process for generating a plasma for a time period under a second plasma forming condition, which is different from the first plasma forming condition.
  • a preprocessing voltage applied to the second electrode during the plasma processing preparation process is higher than a voltage applied to the second electrode during the plasma processing process. Using the preprocessing voltage, deposits can be removed from the peripheral portion of the second electrode.
  • FIG. 1 shows a block diagram for illustrating a configuration of a plasma processing apparatus in accordance with a first preferred embodiment of the present invention
  • FIG. 2 illustrates a cross sectional view of a susceptor of the plasma processing apparatus and a surrounding region thereof in accordance with the first preferred embodiment
  • FIG. 3 sets forth a waveform chart showing a first high frequency power, a second high frequency power and a voltage of a lower electrode in a typical plasma processing apparatus
  • FIG. 4 gives a waveform chart showing a first high frequency power, a second high frequency power and a voltage of a lower electrode in the plasma processing apparatus in accordance with the first preferred embodiment of the present invention
  • FIG. 5A provides a Smith chart illustrating a locus of an impedance matching of an upper electrode in a typical plasma processing apparatus
  • FIG. 5B produces a Smith chart illustrating a locus of an impedance matching of a lower electrode in a typical plasma processing apparatus
  • FIG. 6A presents a Smith chart showing a locus of an impedance matching of an upper electrode in the plasma processing apparatus in accordance with the first preferred embodiment of the present invention
  • FIG. 6B exhibits a Smith chart showing a locus of an impedance matching of a lower electrode in the plasma processing apparatus in accordance with the first preferred embodiment of the present invention
  • FIG. 7 represents a diagram for explaining a frequency of an abnormal discharge occurrence when a voltage of a susceptor (a lower electrode) is not overshot and that when it is overshot;
  • FIG. 8 offers a waveform chart of an overshoot voltage applied to the susceptor (a lower electrode);
  • FIG. 9 depicts a graph for demonstrating a relationship between an inhibitory effect on an abnormal discharge and the amount of overshoot
  • FIG. 10 describes a waveform chart of a control signal outputted from a control unit of a plasma processing apparatus in accordance with a second preferred embodiment of the present invention.
  • FIG. 11 displays a waveform chart showing a first high frequency power, a second high frequency power and a voltage of a lower electrode in the plasma processing apparatus in accordance with the second preferred embodiment.
  • FIG. 1 shows a configuration of a plasma processing apparatus 100 in accordance with a first preferred embodiment of the present invention.
  • the plasma processing apparatus 100 has a processing vessel (not shown) made of a conductive material, e.g., aluminum.
  • the processing vessel has therein a processing chamber 110 where a predetermined plasma processing is performed on an object to be processed, i.e., a wafer W.
  • An upper electrode (a first electrode) 120 and a susceptor 130 are arranged to face each other in the processing chamber 110 .
  • the approximately cylindrical susceptor 130 provided at a lower portion of the processing chamber 110 functions as a mounting table on which the wafer W is loaded during the plasma processing and, at the same time, as a lower electrode (a second electrode) for generating a glow discharge together with the upper electrode 120 installed at an upper portion of the processing chamber 110 , so that a reaction gas introduced into the processing chamber 110 becomes plasma.
  • the plasma P generated between the upper electrode 120 and the susceptor 130 performs a predetermined plasma processing such as an etching or the like on the wafer W.
  • the upper electrode 120 is arranged apart from the susceptor 130 having therebetween a distance of in a range, e.g., from 5 mm to 150 mm. Further, the upper electrode 120 and the susceptor 130 can vertically move independently. The distance therebetween is adjusted based on the type of the plasma processing and, further, controlled so as to obtain a uniformity of the plasma.
  • the plasma processing apparatus 100 has two power systems, i.e., a first power system for supplying a first high frequency power 147 to the upper electrode 120 and a second power system for supplying a second high frequency power 157 to the susceptor 130 .
  • the first power system includes a first high frequency power supply 141 for outputting the first high frequency power 147 of, e.g., 60 MHz, a first matching unit 143 for matching impedances of a load side and a first high frequency power supply 141 side, and a high pass filter (HPF) 145 coupled to the susceptor 130 .
  • the first matching unit 143 includes variable capacitors C 1 U and C 2 U of which capacitances can be varied.
  • the variable capacitor C 1 U is connected between a transmission line of the first high frequency power 147 and the ground, and the variable capacitor C 2 U is connected to the transmission line of the first high frequency power 147 in series.
  • the second power system includes a second high frequency power supply 151 for. outputting the second high frequency power 157 of, e.g., 2 MHz, a second matching unit 153 for matching impedances of a load side and a second high frequency power supply 151 side, and a low pass filter (LPF) 155 coupled to the upper electrode 120 .
  • the second matching unit 153 includes variable inductors L 1 L and L 2 L of which inductances can be varied and capacitors C 1 L and C 2 L having constant capacitances.
  • the variable inductors L 1 L and L 2 L and the capacitor C 2 L are connected to the transmission line of the second high frequency power 157 in series in that order from the second high frequency power supply 151 . Further, the capacitor C 1 L is connected between the ground and a connecting line between the variable inductors L 1 L and L 2 L.
  • the first high frequency power 147 outputted from the first high frequency power supply 141 is supplied to the upper electrode 120 via the first matching unit 143
  • the second high frequency power 157 outputted from the second high frequency power 151 is supplied to the susceptor 130 via the second matching unit 153 to thereby convert a reaction gas introduced into the processing chamber 110 into a plasma.
  • the first high frequency power 147 flows from the upper electrode 120 to the susceptor 130 , while the second high frequency power 157 flows from the susceptor 130 to the upper electrode 120 .
  • the high frequency power 147 passing through the susceptor 130 is grounded via the HPF 145
  • the second high frequency power 157 passing through the upper electrode 120 is grounded via the LPF 155 . Since the HPF 145 is connected to the susceptor 130 , the first high frequency power 147 is prevented from flowing toward the second matching unit 153 and the second high frequency power supply 151 which are included in the second power system, thereby stabilizing an operation of the second power system.
  • the LPF 155 is connected to the upper electrode 120 , the second high frequency power 157 is prevented from flowing toward the first matching unit 143 and the first high frequency power supply 141 which are included in the first power system, thereby stabilizing an operation of the first power system.
  • inner circuits of the first matching unit 143 and the second matching unit 153 shown in FIG. 1 are examples and, therefore, it is desirable to modify a connection between capacitors and inductors and the number thereof depending on a configuration of the plasma processing apparatus 100 (especially, a configuration of the high frequency power system) or processing conditions.
  • the plasma processing apparatus 100 has a control unit 160 for controlling the first and the second power systems.
  • the control unit 160 controls the first and the second high frequency power supplies 141 and 151 and the first and the second matching units 143 and 153 , at least as described below. In the following, specific examples of the control performed by the control unit 160 will be described.
  • the control unit 160 adjusts an output frequency, an output timing and a power level of the first high frequency power 147 outputted from the first high frequency power supply 141 to the upper electrode 120 .
  • the control unit 160 adjusts respective capacitances of the variable capacitors C 1 U and C 2 U included in the first matching unit 143 so that an impedance of a load side seen from an input terminal 143 - 1 of the first matching unit 143 can be 50 ⁇ .
  • control unit 160 adjusts an output frequency, an output timing and a power level of the second high frequency power 157 outputted from the second high frequency power supply 151 to the susceptor 130 .
  • the control unit 160 adjusts respective inductances of the variable inductors L 1 L and L 2 L included in the second matching unit 153 so that an impedance of a load side seen from an input terminal 153 - 1 of the second matching unit 153 can be 50 ⁇ .
  • a first detector can be provided between the first matching unit 143 and the upper electrode 120 to detect information on the first high frequency power 147 supplied to the upper electrode 120 [e.g., a frequency and a power level of the first high frequency power 147 and an actual timing when the first high frequency power 147 is applied to the upper electrode 120 ]. And the information detected by the first detector may be fed back to the control unit 160 . In this manner, the control unit 160 can control the operation of the first high frequency power supply 141 and that of the first matching unit 143 with highly enhanced accuracy. Further, by providing a second detector between the second matching unit 153 and the susceptor 130 , the same effects can be obtained in controlling the second high frequency power supply 151 and the second matching unit 153 .
  • the susceptor 130 serving as a lower electrode (a second electrode) installed in the processing chamber 110 and a surrounding region thereof will be described in detail with reference to FIG. 2.
  • the susceptor 130 serving as the lower electrode (the second electrode) is connected to the second high frequency power supply 151 via the second matching unit 153 .
  • An electrostatic chuck 170 is provided on top of the susceptor 130 .
  • a DC power supply 172 is connected to an electrode plate 170 a of the electrostatic chuck 170 .
  • a wafer W can be electrostatically attracted and held on the electrostatic chuck 170 .
  • a focus ring 180 surrounding the wafer W mounted on top of the electrostatic chuck 170 is arranged.
  • the focus ring 180 is a conductor and is surrounded by a cover ring 182 that is an insulator.
  • a wafer W as an object of the plasma processing is conveyed into the processing chamber 110 illustrated in FIGS. 1 and 2 by a transfer mechanism (not shown). Then, the wafer W is loaded on the electrostatic chuck 170 provided on the susceptor 130 , the electrostatic chuck 170 being lowered to a waiting location. If a DC voltage is applied from a high voltage DC power supply 172 to the electrostatic chuck 170 , the wafer W is kept being attracted and held on the electrostatic chuck 170 .
  • the susceptor 130 is elevated to a location where a distance between the susceptor 130 and the upper electrode 120 ranges from 15 to 45 mm.
  • an inner pressure of the processing chamber 110 is adjusted to a level ranging from 15 to 800 mTorr.
  • a reaction gas is introduced into the processing chamber 110 .
  • the first high frequency power supply 141 outputs the first high frequency power 147 and the second high frequency power supply 151 outputs the second high frequency power 157 .
  • the first and the second high frequency power 147 and 157 are applied to the upper electrode 120 and the susceptor 130 , respectively, a glow discharge is generated between the upper electrode 120 and the susceptor 130 , thereby igniting the plasma P.
  • a predetermined plasma processing such as an etching or the like is performed on the wafer W.
  • the focus ring 180 makes the plasma converge on the wafer W. Without the focus ring 180 , the plasma is diffused toward an inner wall of the processing chamber 110 , thereby decreasing a plasma density at each peripheral portion of the upper electrode 120 and the susceptor 130 .
  • the focus ring 180 it is possible to obtain a uniform plasma density throughout a central portion and a peripheral portion of the wafer W. As a result, an abnormal discharge around the peripheral portion of the wafer W caused by nonuniformity of the plasma is prevented.
  • the plasma processing apparatus 100 in accordance with the first preferred embodiment removes deposits from the processing chamber 110 , especially, from the surrounding regions [e.g., regions S 1 and S 2 ] of the susceptor 130 serving as a lower electrode (a second electrode).
  • an overshoot voltage i.e., a preprocessing voltage
  • a predetermined plasma processing such as an etching or the like is performed on the wafer W, that is, at the time of plasma ignition, in order to remove deposits accumulated inside the processing chamber 110 , especially, around the peripheral portion of the susceptor 130 serving as the lower electrode.
  • FIG. 3 illustrates an operation of such a typical plasma processing apparatus by showing power waveforms of a first and a second high frequency power respectively applied to the upper and the lower electrode and a voltage waveform of the lower electrode during the period from the plasma ignition to the beginning of the actual plasma processing.
  • the second high frequency power adjusted to an initial level (e.g., 200 to 1000 W) is outputted from the second high frequency power supply and then applied to the lower electrode.
  • the first high frequency power adjusted to an initial level (e.g., 50 to 1000 W) is outputted from the first high frequency power supply and then applied to the upper electrode.
  • a coating region referred to as an ion sheath is already formed on a surface of the wafer loaded on the lower electrode.
  • a plasma density is not uniform right after the plasma ignition and, thus, when the plasma in such a state is in contact with the wafer, a current caused by a spatial variation of the plasma density flows along the wafer. The current may damage components, e.g., semiconductor devices and the like, formed on the wafer.
  • the ion sheath is formed on the wafer surface by the time of plasma ignition, the plasma does not contact the wafer and, therefore, the components of the wafer are maintained in a desirable state.
  • recipe levels of the first and the second high frequency power and the voltage of the lower electrode may be from 1000 to 2500 W, from 1000 to 2000 W, and about 1500 V, respectively.
  • each of the first and the second high frequency power reaches its own recipe level and the voltage of the lower electrode is controlled to meet the recipe level. Then, while the voltage of the lower electrode is maintained at the recipe level, a predetermined plasma processing is performed on the wafer.
  • FIG. 3 illustrates power ⁇ voltage waveforms in which the first and the second high frequency power reach the recipe levels at the time T 03 almost simultaneously, it is only an example. With a view to protecting the wafer, if the ion sheath is formed on the wafer surface at the time T 02 , either the first high frequency power or the second high frequency power may reach the recipe level earlier than the other one.
  • FIG. 4 illustrates an operation of the plasma processing apparatus 100 by showing a power waveform of the first high frequency power 147 applied to the upper electrode 120 , a power waveform of the second high frequency power 157 applied to the susceptor 130 serving as the lower electrode and a voltage waveform of the susceptor 130 during the period from the plasma ignition to the beginning of the actual plasma processing.
  • the second high frequency power 157 modulated to the initial level (e.g., 200 to 1000 W) is outputted from the second high frequency power supply 151 and then applied to the susceptor 130 .
  • the first high frequency power 147 modulated to the initial level (e.g., 50 to 1000 W) is outputted from the first high frequency power supply 141 and then applied to the upper electrode 120 .
  • the ion sheath is formed on a surface of the wafer W at the time T 12 , the plasma P whose density is irregular right after the ignition is not in contact with the wafer W. Accordingly, the wafer W and the components formed on the wafer W such as various semiconductor devices and the like are maintained in a desirable state.
  • the second high frequency power 157 is modulated to a recipe level (e.g., 1000 to 2000 W) at a time Tos 1 .
  • a voltage of the susceptor 130 i.e., the lower electrode, starts to increase from a voltage level of the times T 11 and T 12 so as to reach a voltage level (a peak level, e.g., 3000 V) higher than the recipe level (e.g., 1500 V).
  • the voltage of the susceptor 130 is maintained at a level higher than the recipe level until a time Tos 2 .
  • a voltage state of the susceptor 130 from the time Tos 1 to the time Tos 2 is shown in FIG. 4 as an overshoot waveform (an overshoot voltage).
  • the first high frequency power 147 reaches the recipe level. Further, the voltage of the susceptor 130 decreases from the peak level (deviates from an overshoot state) and is stabilized at the recipe level. Thereafter, the voltage of the susceptor 130 is maintained at the recipe level, thereby enabling to perform a predetermined plasma processing on the wafer W.
  • a voltage of the susceptor 130 is overshot for a predetermined period of time (time Tos 1 ⁇ time Tos 2 ) right before the voltage of the susceptor 130 is modulated to the recipe level.
  • the plasma processing apparatus 100 in accordance with the first preferred embodiment includes the control unit 160 capable of controlling the voltage of the susceptor 130 to be overshot.
  • the overshoot voltage is applied to the susceptor 130 for a predetermined period of time right before beginning of a predetermined plasma processing.
  • a reactance of each reactance element [variable capacitors (C 1 U and C 2 U) and variable inductors (L 1 L and L 2 L)] is adjusted to be a predetermined value by the control unit 160 . Accordingly, as illustrated in FIG. 4, it is possible to overshoot the voltage of the susceptor 130 right before it is modulated to the recipe level. A relationship between the reactance control of the first and the second matching units 143 and 153 and the overshoot phenomenon of the voltage of the susceptor 130 has been examined by an experiment performed by using the plasma processing apparatus 100 .
  • a condition for each reactance of the first and the second matching units 143 and 153 in case a voltage applied to the susceptor 130 does not have an overshoot will be described.
  • a voltage waveform of the susceptor 130 illustrated in FIG. 3, which has no overshoot portion, is obtained by setting a control step for each reactance of the first and the second matching units 143 and 153 in the plasma processing apparatus 100 in accordance with the first embodiment under conditions to be described hereinafter.
  • a reactance (a capacitance) of the first matching unit 143 is adjustable within a range of 0 to 2000 steps and that of the second matching unit 153 is adjustable within a range of 0 to 1000 steps.
  • each capacitance of the variable capacitors C 1 U and C 2 U included in the first matching unit 143 is adjusted from 0 to 200 pF by adjusting the capacitors between 0 and 2000 steps.
  • each inductance of the variable inductors L 1 L and L 2 L included in the second matching unit 153 is adjusted from 0 to 30 ⁇ H by adjusting the inductors between 0 and 1000 steps.
  • the number of steps and each capacitance/inductance are linearly related. Therefore, in case the variable capacitor C 1 U is adjusted to 1500 steps, the capacitance thereof becomes 150 pF. In case the variable capacitor C 2 U is adjusted to 900 steps, the capacitance thereof becomes 90 pF. Further, in case the variable inductor L 1 L is adjusted to 100 steps, the inductance thereof becomes 3 ⁇ H, and in case the variable inductor L 2 L is adjusted to 500 steps, the inductance thereof becomes 15 ⁇ H.
  • a voltage waveform of the susceptor 130 illustrated in FIG. 4, which has an overshoot portion, can be obtained by setting the control step of each reactance of the first and the second matching units 143 and 153 in the plasma processing apparatus 100 in accordance with the first embodiment at following conditions;
  • FIGS. 5A and 5B represent Smith charts respectively indicating a locus of an impedance matching of the impedance of the upper electrode 120 side which is seen from the first high frequency power supply 141 side of the first matching unit 143 with that of the susceptor 130 side which is seen from the second high frequency power supply 151 side of the second matching unit 153 when a plasma P is formed between the upper electrode 120 and the susceptor 130 in the plasma processing apparatus 100 to which the aforementioned [condition 1] is applied.
  • the voltage of the susceptor 130 is not overshot.
  • FIGS. 6A and 6B represent Smith charts respectively indicating a locus of an impedance matching of the impedance of the upper electrode 120 side which is seen from the first high frequency power supply 141 side of the first matching unit 143 with that of the susceptor 130 side which is seen from the second high frequency power supply 151 side of the second matching unit 153 when a plasma P is formed between the upper electrode 120 and the susceptor 130 in the plasma processing apparatus 100 to which the aforementioned [condition 2] is applied.
  • the voltage of the susceptor 130 is overshot.
  • the impedance locus shown in FIG. 5A is different from that illustrated in FIG. 6A. Further, the impedance locus depicted in FIG. 5B is different from that described in FIG. 6B. This is because each capacitance of the variable capacitors C 1 U and C 2 U included in the first matching unit 143 and each inductance of the variable inductors L 1 L and L 2 L included in the second matching unit 153 are changed. Besides, as can be seen from FIGS. 5A and 6A, start points SP are different, and a locus to reach the impedance matching which is shown in FIG. 6A is longer than that shown in FIG. 5A. And it is same in FIGS. 5B and 6B. However, an elongation of the locus of impedance matching for the upper electrode 120 side (the relationship between FIGS. 5A and 6A) is greater than that of the susceptor 130 side (the relationship between FIGS. 5B and 6B).
  • each reactance of the first and the second matching units 143 and 153 is adjusted so that a time to complete the impedance matching of the impedance of the upper electrode 120 side (the impedance matching time of the upper electrode side) with that of the susceptor 130 side (the impedance matching time of the lower electrode side) can be increased and, further, the impedance matching time of the upper electrode side can be prolonged than that of the lower electrode side.
  • the control unit 160 is adjusted by the control unit 160 in order to give an overshoot to the voltage applied to the susceptor 130 .
  • FIG. 7 depicts a frequency of an abnormal discharge occurrence right after the plasma ignition which was checked in case a voltage of the susceptor 130 is not overshot (see FIG. 3) and in case it is overshot (see FIG. 4) right before the beginning of the plasma processing.
  • each reactance of matching units for an upper and a lower electrode was adjusted in accordance with the aforementioned [condition 1], i.e., a condition under which a voltage of the lower electrode is not overshot, and then the plasma ignition was repeated several times.
  • condition 1 i.e., a condition under which a voltage of the lower electrode is not overshot
  • the plasma ignition was repeated several times.
  • the frequency of an abnormal discharge occurrence was 1.6%.
  • Such result indicates that in case the voltage of the lower electrode is not overshot, the abnormal discharge occurs 1.6 times when the plasma ignition is performed 100 times.
  • each reactance of the matching units for an upper and a lower electrode was adjusted in accordance with the aforementioned [condition 2], i.e., a condition under which a voltage of the lower electrode is overshot, and then the plasma ignition was repeated several times.
  • condition 2 i.e., a condition under which a voltage of the lower electrode is overshot
  • the plasma ignition was repeated several times.
  • the frequency of an abnormal discharge occurrence was 0.0%.
  • FIG. 8 illustrates an enlarged view of an overshoot portion out of a waveform of a voltage applied to the susceptor 130 serving as the lower electrode shown in FIG. 4.
  • the amount of overshoot of the voltage applied to the susceptor 130 is defined by using a peak value Vp of the voltage and a time ⁇ T required for stabilizing the voltage which passes the peak value Vp after the voltage is applied to the susceptor 130 (e.g., until the voltage is lowered to 2000 V).
  • FIG. 9 depicts a result of an experiment that examined a relationship between the amount of overshoot and an inhibitory effect on the abnormal discharge.
  • test plasma processing apparatuss A to H having substantially the same configuration as that of the plasma processing apparatus 100 in accordance with the first preferred embodiment. Further, for each of the plasma processing apparatuss, a waveform of a voltage applied to the lower electrode during the plasma ignition was examined and the abnormal discharge occurrence was checked.
  • each reactance of the matching units respectively for an upper and a lower electrode which are included in every test plasma processing apparatus was adjusted so as to overshoot the voltage applied to the lower electrode before the plasma processing.
  • the amount of overshoot of the voltage applied to the lower electrode became different in each plasma processing apparatus.
  • the plasma processing apparatus F showed the greatest amount of overshoot and the plasma processing apparatus H showed the second greatest amount of overshoot.
  • the plasma processing apparatus B showed the smallest amount of overshoot
  • the plasma processing apparatus C showed the second smallest amount of overshoot.
  • An abnormal discharge was observed right after the plasma ignition only in the plasma processing apparatus B having the smallest amount of overshoot among the eight test plasma processing apparatuss. In other plasma processing apparatuss, an abnormal discharge was not observed.
  • an overshoot voltage needs to be applied to the lower electrode and the amount of the overshoot needs to reach a threshold value.
  • 5500V ⁇ sec can be employed as the threshold value of the amount of overshoot of the voltage applied to the lower electrode. That is, by applying an overshoot voltage greater than 5500V ⁇ sec to the lower electrode, it is possible to prevent the abnormal discharge occurrence right after the plasma ignition.
  • the main concern in setting the time ⁇ T should be put on its effect on a throughput of the plasma processing apparatus. If the time ⁇ T is set excessively long, the number of wafers that can be processed per unit time decreases, thereby deteriorating the throughput. On the other hand, the main consideration in setting the peak value Vp should be put on a working voltage (e.g., 3000 V).
  • each reactance of the first and the second matching units 143 and 153 is freely adjusted by the control unit 160 . Further, the time ⁇ T and the peak value Vp of the overshoot voltage applied to the susceptor 130 are determined by thus adjusted reactances of the first and the second matching units 143 and 153 . Therefore, in accordance with this embodiment, in order to remove the deposits from the processing chamber 110 , it is possible to apply the overshoot voltage whose size does neither deteriorate the throughput of the plasma processing apparatus nor damage the plasma processing apparatus to the susceptor 130 serving as the lower electrode.
  • an overshoot voltage is applied to the susceptor 130 serving as the lower electrode right before the plasma processing is performed on the wafer W.
  • the overshoot voltage By using the overshoot voltage, the deposits accumulated around the peripheral portion of the susceptor 130 can be removed, thereby preventing the abnormal discharge occurrence right after the plasma ignition in the processing chamber. Further, when the deposits are removed from the peripheral portion of the susceptor 130 , uniformity of the plasma density increases, thereby resulting in a stabilization of the plasma processing.
  • the plasma processing apparatus 100 in accordance with the first preferred embodiment has the control unit 160 capable of adjusting each reactance of the first and the second matching units 143 and 153 , it is easy to apply the overshoot voltage to the susceptor 130 . Moreover, it is possible to control the amount of overshoot.
  • a plasma processing apparatus in accordance with the second preferred embodiment and a control method thereof will be described with reference to FIGS. 1, 10 and 11 .
  • the plasma processing apparatus in accordance with the second preferred embodiment has substantially the same configuration as that of the plasma processing apparatus 100 in accordance with the first preferred embodiment.
  • the control method of the plasma processing apparatus in accordance with the second preferred embodiment is equal to that of the plasma processing apparatus in accordance with the first preferred embodiment in that an overshoot voltage is applied to the susceptor 130 , or lower electrode, right before the plasma processing is performed on the wafer W.
  • the voltage applied to the susceptor 130 is overshot by different functions and operations from those in case of the plasma processing apparatus 100 in accordance with the first preferred embodiment and the control method thereof.
  • each reactance of the first and the second matching units 143 and 153 is adjusted by the control unit 160 .
  • an overshoot voltage is generated by adjusting power levels and output timings of the first and the second high frequency power 147 and 157 respectively outputted from the first and the second high frequency power supplies 141 and 151 .
  • FIG. 10 sets forth a timing chart of control signals outputted from the control unit 160 included in the plasma processing apparatus in accordance with the second preferred embodiment to the first and the second high frequency power supplies 141 and 151 .
  • the first high frequency power supply 141 adjusts the output power level and the output timing of the first high frequency power 147 based on the control signal received from the control unit 160 .
  • the second high frequency power supply 151 adjusts the output power level and the output timing of the second high frequency power 157 based on the control signal received from the control unit 160 .
  • FIG. 11 illustrates a power waveform of the first high frequency power 147 applied to the upper electrode 120 , a power waveform of the second high frequency power 157 applied to the susceptor 130 , or lower electrode, and a voltage waveform of the susceptor 130 , which are obtained when each control signal is outputted from the control unit 160 to the first and the second high frequency power supplies 147 and 157 at the timings illustrated in FIG. 10.
  • the control unit 160 transmits a control signal to the second high frequency power supply 151 so that the second high frequency power 157 modulated to an initial level can be outputted (see FIG. 10).
  • the second high frequency power supply 151 that received the control signal outputs the second high frequency power 157 modulated to the initial level (e.g., 200 to 1000 W) to the susceptor 130 .
  • a voltage of the susceptor 130 , or lower electrode increases from 0 V to, e.g., 500 V(see FIG. 11).
  • the control unit 160 transmits a control signal to the first high frequency power supply 141 so that the first high frequency power 147 modulated to an initial level can be outputted (see FIG. 10).
  • the first high frequency power supply 141 that received the control signal outputs the first high frequency power 147 modulated to the initial level (e.g., 50 to 1000 W) to the upper electrode 120 .
  • a plasma preplasma is ignited between the upper electrode 120 and the susceptor 130 .
  • the plasma does not contact the wafer W so that the components, e.g., a semiconductor device and the like, formed on the wafer W can be maintained in a desirable state.
  • the control unit 160 transmits a control signal to the first high frequency power supply 141 so that the first high frequency power 147 modulated to a deposit removal level which is higher than the initial level can be outputted (see FIG. 10).
  • the first high frequency power supply 141 that received the control signal outputs the first high frequency power 147 modulated to the deposit removal level to the upper electrode 120 .
  • the control unit 160 transmits a control signal to the second high frequency power supply 151 so that the second high frequency power 157 modulated to a deposit removal level can be outputted (see FIG. 10).
  • the second high frequency power supply 151 that received the control signal outputs the second high frequency power 157 modulated to the deposit removal level (e.g., 1000 W) to the susceptor 130 .
  • a voltage of the susceptor 130 , or lower electrode increases to, e.g., 2700 V (see FIG. 11).
  • the first and the second high frequency power supplies 141 and 151 stop outputting of the first and the second high frequency power 147 and 157 , respectively, in accordance with a control of the control unit 160 . Accordingly, the voltage of the susceptor 130 , or lower electrode, decreases to 0 V. At this time, the plasma (preplasma) ignited at the time T 32 is also turned off.
  • the control unit 160 transmits a control signal to the second high frequency power supply 151 so as to output the second high frequency power 157 modulated to the initial level (see FIG. 10).
  • the second high frequency power supply 151 that received the control signal outputs the second high frequency power 157 modulated to the initial level (e.g., 200 to 1000 W) to the susceptor 130 .
  • a voltage of the susceptor 130 , or lower electrode increases from 0 V to, e.g., 500 V(see FIG. 11).
  • the control unit 160 transmits a control signal to the first high frequency power supply 141 so as to output the first high frequency power 147 modulated to the initial level (see FIG. 10).
  • the first high frequency power supply 141 that received the control signal outputs the first high frequency power 147 modulated to the initial level (e.g., 50 to 1000 W) to the upper electrode 120 .
  • a plasma main plasma is ignited between the upper electrode 120 and the susceptor 130 .
  • the plasma since the ion sheath is formed on a surface of the wafer W, the plasma does not make any contact with the wafer W, thereby maintaining the components, e.g., a semiconductor device and the like, formed on the wafer W in a desirable state.
  • the control unit 160 transmits a control signal to the second high frequency power supply 151 so as to output the second high frequency power 157 modulated to a recipe level (see FIG. 10).
  • the second high frequency power supply 151 that received the control signal outputs the second high frequency power 157 modulated to the recipe level (e.g., 1000 to 2000 W) to the susceptor 130 .
  • the control unit 160 transmits a control signal to the first high frequency power supply 141 so as to output the first high frequency power 147 modulated to a recipe level (see FIG. 10).
  • the first high frequency power supply 141 that received the control signal outputs the first high frequency power 147 modulated the recipe level (e.g., 1000 to 2500 W) to the upper electrode 120 (see FIG. 11).
  • a voltage of the susceptor 130 , or lower electrode reaches a recipe level (e.g., 1500 V) and then is maintained at the recipe level, thereby enabling a predetermined plasma processing on the wafer W by using the main plasma.
  • a characteristic of the control method of the plasma processing apparatus in accordance with the second preferred embodiment is that it includes a plasma processing step [since the time T 36 ] for igniting a main plasma and then performing a predetermined plasma processing on the wafer W by using the main plasma; and a deposit removing step [from the time T 31 to the time T 35 ] as a plasma processing preparation step for igniting a preplasma to remove deposits inside the processing chamber 110 , the deposit removing step being performed prior to the plasma processing step.
  • the main plasma ignited during the plasma processing step is used for performing a predetermined plasma processing on the wafer W whereas the preplasma ignited during the deposit removing step is used for removing the deposits inside the processing chamber 110 . Therefore, physical characteristics of those plasmas are different from each other. Further, as shown in FIGS. 10 and 11, conditions for forming respective plasmas, i.e., power levels of the first and the second high frequency power 147 and 157 and output timings thereof from the first and the second high frequency power supplies 141 and 151 are different from each other.
  • a preprocessing voltage an overshoot voltage
  • the susceptor 130 or lower electrode, thereby forming the aforementioned preplasma.
  • the plasma processing apparatus in accordance with the second preferred embodiment and the control method thereof can provide the same effect as the plasma processing apparatus in accordance with the first preferred embodiment and the control method thereof.
  • the voltage applied to the susceptor 130 , or lower electrode is overshot for a predetermined period of time by adjusting the power levels and the output timings of the first and the second high frequency power 147 and 157 respectively outputted from the first and the second high frequency power supplies 141 and 151 . Accordingly, even under processing conditions such as a type of the reaction gase, a pressure in the processing chamber 110 , a distance between the upper electrode 120 and the susceptor 130 and the like are changed and the amount of overshoot of the voltage applied to the susceptor 130 can be controlled with relative ease and high accuracy. Therefore, the abnormal discharge occurrence can be more precisely prevented right after the plasma ignition in the processing chamber.
  • a parallel plate plasma processing apparatus is used as an example of the plasma processing apparatus to describe the preferred embodiments, the present invention is not limited thereto.
  • a helicon wave plasma processing apparatus, an inductively coupled plasma processing apparatus and the like can be applied to the present invention.
  • the overshoot voltage is applied to the second electrode, it is possible to remove the deposits inside the processing chamber, especially, from a peripheral portion of the second electrode. If the overshoot voltage to the second electrode is applied before the beginning of the plasma processing performed on an object to be processed, an abnormal discharge occurrence can be prevented when the plasma processing is started. Further, during the plasma processing, a uniformity of plasma can be obtained. Furthermore, it is possible to implement an improvement of the throughput of the plasma processing apparatus.

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CN104409309B (zh) * 2014-12-01 2016-09-21 逢甲大学 大面积等离子体处理装置与均匀等离子体生成方法
US9577516B1 (en) * 2016-02-18 2017-02-21 Advanced Energy Industries, Inc. Apparatus for controlled overshoot in a RF generator
CN108093551B (zh) * 2017-12-20 2020-03-13 西安交通大学 用于激励产生均匀放电高活性等离子体的复合电源装置
CN109814006B (zh) * 2018-12-20 2020-08-21 北京北方华创微电子装备有限公司 一种蚀刻系统放电异常检测方法和装置
KR20200087694A (ko) * 2019-01-11 2020-07-21 도쿄엘렉트론가부시키가이샤 처리 방법 및 플라즈마 처리 장치
CN114459670B (zh) * 2022-04-12 2022-06-17 季华实验室 一种电容薄膜真空计

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