US20040224241A1 - Thin film transistor array panel, manufacturing method thereof, and mask therefor - Google Patents

Thin film transistor array panel, manufacturing method thereof, and mask therefor Download PDF

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Publication number
US20040224241A1
US20040224241A1 US10/771,278 US77127804A US2004224241A1 US 20040224241 A1 US20040224241 A1 US 20040224241A1 US 77127804 A US77127804 A US 77127804A US 2004224241 A1 US2004224241 A1 US 2004224241A1
Authority
US
United States
Prior art keywords
portions
slits
photoresist
layer
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/771,278
Other languages
English (en)
Inventor
Woon-Yong Park
Won-Hee Lee
Il-gon Kim
Seung-Taek Lim
You-Lee Song
Sahng-Ik Jun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020030006588A external-priority patent/KR100910566B1/ko
Priority claimed from KR1020030007411A external-priority patent/KR100910563B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Assigned to SAMSUNG ELECTRONIC CO., LTD. reassignment SAMSUNG ELECTRONIC CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: JUN, SAHNG-IK, KIM, II-GON, LEE, WON-HEE, LIM, SEUNG-TAEK, PARK, WOON-YONG, SONG, YOU-LEE
Publication of US20040224241A1 publication Critical patent/US20040224241A1/en
Priority to US11/824,879 priority Critical patent/US7709304B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
US10/771,278 2003-02-03 2004-02-02 Thin film transistor array panel, manufacturing method thereof, and mask therefor Abandoned US20040224241A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/824,879 US7709304B2 (en) 2003-02-03 2007-07-02 Thin film transistor array panel, manufacturing method thereof, and mask therefor

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR2003-0006588 2003-02-03
KR1020030006588A KR100910566B1 (ko) 2003-02-03 2003-02-03 박막 트랜지스터 표시판의 제조 방법 및 이를 위한 마스크
KR1020030007411A KR100910563B1 (ko) 2003-02-06 2003-02-06 박막 트랜지스터 표시판
KR2003-0007411 2003-02-06

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/824,879 Division US7709304B2 (en) 2003-02-03 2007-07-02 Thin film transistor array panel, manufacturing method thereof, and mask therefor

Publications (1)

Publication Number Publication Date
US20040224241A1 true US20040224241A1 (en) 2004-11-11

Family

ID=32965016

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/771,278 Abandoned US20040224241A1 (en) 2003-02-03 2004-02-02 Thin film transistor array panel, manufacturing method thereof, and mask therefor
US11/824,879 Expired - Fee Related US7709304B2 (en) 2003-02-03 2007-07-02 Thin film transistor array panel, manufacturing method thereof, and mask therefor

Family Applications After (1)

Application Number Title Priority Date Filing Date
US11/824,879 Expired - Fee Related US7709304B2 (en) 2003-02-03 2007-07-02 Thin film transistor array panel, manufacturing method thereof, and mask therefor

Country Status (4)

Country Link
US (2) US20040224241A1 (zh)
JP (1) JP2004241774A (zh)
CN (1) CN1519955B (zh)
TW (1) TW200424724A (zh)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050199585A1 (en) * 2004-03-12 2005-09-15 Applied Materials, Inc. Method of depositing an amorphous carbon film for metal etch hardmask application
US20060292865A1 (en) * 2005-06-28 2006-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20070015319A1 (en) * 2005-07-15 2007-01-18 Samsung Electronics Co., Ltd. Method for forming contact hole and method for fabricating thin film transistor plate using the same
US20080176364A1 (en) * 2007-01-18 2008-07-24 Samsung Electronics Co., Ltd. Method of manufacturing thin film transistor substrate
US20080316416A1 (en) * 2007-06-20 2008-12-25 Mao-Yi Chang Liquid crystal display and method for making the same
US20090231310A1 (en) * 2008-03-11 2009-09-17 Tung-Chang Tsai Gate driver-on-array and method of making the same
US20120322213A1 (en) * 2004-06-03 2012-12-20 Lg Display Co., Ltd. Substrate for liquid crystal display device including peripheral lines having openings and fabricating method thereof
US8361820B2 (en) 2008-02-27 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a liquid crystal display device
US20140022622A1 (en) * 2012-07-12 2014-01-23 Amazon Technologies, Inc. Electrowetting display device and manufacturing method thereof
US9184223B2 (en) 2013-03-25 2015-11-10 Samsung Display Co., Ltd. Display apparatus and method manufacturing the same
US20160315199A1 (en) * 2013-12-26 2016-10-27 Shenzhen China Star Optoelectronics Technology Co., Ltd Photo mask, thin film transistor and method for manufacturing thin film transistor
US20190027498A1 (en) * 2017-01-03 2019-01-24 Boe Technology Group Co., Ltd. Array substrate and display device
US20200174327A1 (en) * 2017-08-28 2020-06-04 Wuhan China Star Optoelectronics Technology Co., Ltd. Liquid crystal display panel with ultra-narrow bottom border and manufacturing method thereof
CN113206144A (zh) * 2021-04-25 2021-08-03 北海惠科光电技术有限公司 薄膜晶体管的制备方法、薄膜晶体管及显示面板
US11145682B2 (en) 2018-03-23 2021-10-12 Ordos Yuansheng Optoelectronics Co., Ltd. Array substrate and method for fabricating the same, display panel, display device
US11482624B2 (en) 2004-09-15 2022-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100343749C (zh) * 2005-01-27 2007-10-17 广辉电子股份有限公司 薄膜晶体管液晶显示器的阵列基底及其制造方法
JP5078288B2 (ja) * 2005-06-28 2012-11-21 株式会社半導体エネルギー研究所 発光装置
DE102006032262A1 (de) 2005-07-15 2007-05-03 Samsung Electronics Co., Ltd., Suwon Temperatursensor für eine Anzeigevorrichtung, Dünnschichttransistorarray-Panel, das den Temperatursensor einschliesst, Flüssigkristallanzeige, Treiberschaltung für eine Flüssigkristallanzeige und Flackersteuersystem für eine Flüssigkristallanzeige
JP5148086B2 (ja) * 2005-08-18 2013-02-20 三星電子株式会社 有機薄膜トランジスタ表示板
KR100818887B1 (ko) * 2005-12-14 2008-04-02 엘지.필립스 엘시디 주식회사 액정 표시장치 및 그 제조 방법
US8212953B2 (en) * 2005-12-26 2012-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5063936B2 (ja) * 2006-06-08 2012-10-31 三菱電機株式会社 Ｔｆｔアレイ基板の製造方法
KR20080019398A (ko) * 2006-08-28 2008-03-04 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN101551536B (zh) * 2007-07-05 2010-07-07 友达光电股份有限公司 液晶显示器及其制作方法
JP4811520B2 (ja) * 2009-02-20 2011-11-09 住友金属鉱山株式会社 半導体装置用基板の製造方法、半導体装置の製造方法、半導体装置用基板及び半導体装置
CN102034749B (zh) * 2009-09-25 2013-09-04 北京京东方光电科技有限公司 阵列基板及其制造方法
KR101750430B1 (ko) * 2010-11-29 2017-06-26 삼성디스플레이 주식회사 박막 트랜지스터 표시판의 제조 방법
CN202661759U (zh) * 2012-05-17 2013-01-09 北京京东方光电科技有限公司 一种像素结构、双栅像素结构及显示装置
KR102654924B1 (ko) * 2016-06-16 2024-04-05 삼성디스플레이 주식회사 표시장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087678A (en) * 1996-02-29 2000-07-11 Samsung Electronics Co., Ltd. Thin-film transistor display devices having composite electrodes

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US5116461A (en) * 1991-04-22 1992-05-26 Motorola, Inc. Method for fabricating an angled diffraction grating
US5976741A (en) * 1997-10-21 1999-11-02 Vsli Technology, Inc. Methods for determining illumination exposure dosage
JP2000267257A (ja) 1999-03-12 2000-09-29 Canon Inc マスク及びそれを用いた露光方法
KR100309925B1 (ko) 1999-07-08 2001-11-01 윤종용 액정 표시 장치용 박막 트랜지스터 기판과 그 제조 방법 및 이에 사용되는 광마스크
KR100342860B1 (ko) * 1999-09-08 2002-07-02 구본준, 론 위라하디락사 액정 표시장치 제조방법 및 그 제조방법에 따른 액정표시장치
KR100635943B1 (ko) 1999-11-04 2006-10-18 삼성전자주식회사 박막 트랜지스터 기판 및 그의 제조 방법
KR100783702B1 (ko) 2001-04-16 2007-12-07 삼성전자주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR20020083249A (ko) * 2001-04-26 2002-11-02 삼성전자 주식회사 배선의 접촉 구조 및 그의 제조 방법과 이를 포함하는박막 트랜지스터 기판 및 그 제조 방법
KR100740937B1 (ko) 2001-05-23 2007-07-19 삼성전자주식회사 박막 트랜지스터 기판 및 그 제조 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087678A (en) * 1996-02-29 2000-07-11 Samsung Electronics Co., Ltd. Thin-film transistor display devices having composite electrodes

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050199585A1 (en) * 2004-03-12 2005-09-15 Applied Materials, Inc. Method of depositing an amorphous carbon film for metal etch hardmask application
US8836901B2 (en) * 2004-06-03 2014-09-16 Lg Display Co., Ltd. Substrate for liquid crystal display device including peripheral lines having openings and fabricating method thereof
US20120322213A1 (en) * 2004-06-03 2012-12-20 Lg Display Co., Ltd. Substrate for liquid crystal display device including peripheral lines having openings and fabricating method thereof
US11482624B2 (en) 2004-09-15 2022-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7737442B2 (en) * 2005-06-28 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20060292865A1 (en) * 2005-06-28 2006-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20070015319A1 (en) * 2005-07-15 2007-01-18 Samsung Electronics Co., Ltd. Method for forming contact hole and method for fabricating thin film transistor plate using the same
US20080176364A1 (en) * 2007-01-18 2008-07-24 Samsung Electronics Co., Ltd. Method of manufacturing thin film transistor substrate
US20080316416A1 (en) * 2007-06-20 2008-12-25 Mao-Yi Chang Liquid crystal display and method for making the same
US7755738B2 (en) 2007-06-20 2010-07-13 Au Optronics Corp. Liquid crystal display having heating layer
US20100182559A1 (en) * 2007-06-20 2010-07-22 Mao-Yi Chang Liquid crystal display having heating layer and method of making the same
US7932987B2 (en) 2007-06-20 2011-04-26 Au Optronics Corp. Liquid crystal display having heating layer and method of making the same
US20110164195A1 (en) * 2007-06-20 2011-07-07 Mao-Yi Chang Display device having heating layer and method of making the same
US8314898B2 (en) 2007-06-20 2012-11-20 Au Optronics Corp. Display device having heating layer and method of making the same
US8361820B2 (en) 2008-02-27 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a liquid crystal display device
US8373836B2 (en) 2008-03-11 2013-02-12 Au Optronics Corp. Gate driver-on-array and method of making the same
US20090231310A1 (en) * 2008-03-11 2009-09-17 Tung-Chang Tsai Gate driver-on-array and method of making the same
US20140022622A1 (en) * 2012-07-12 2014-01-23 Amazon Technologies, Inc. Electrowetting display device and manufacturing method thereof
US10001637B2 (en) * 2012-07-12 2018-06-19 Amazon Technologies, Inc. Electrowetting display device and manufacturing method thereof
US9401394B2 (en) 2013-03-25 2016-07-26 Samsung Display Co., Ltd. Method of manufacturing display apparatus
US9184223B2 (en) 2013-03-25 2015-11-10 Samsung Display Co., Ltd. Display apparatus and method manufacturing the same
US20160315199A1 (en) * 2013-12-26 2016-10-27 Shenzhen China Star Optoelectronics Technology Co., Ltd Photo mask, thin film transistor and method for manufacturing thin film transistor
US20190027498A1 (en) * 2017-01-03 2019-01-24 Boe Technology Group Co., Ltd. Array substrate and display device
US10886303B2 (en) * 2017-01-03 2021-01-05 Boe Technology Group Co., Ltd. Array substrate with stepped groove and display device
US20200174327A1 (en) * 2017-08-28 2020-06-04 Wuhan China Star Optoelectronics Technology Co., Ltd. Liquid crystal display panel with ultra-narrow bottom border and manufacturing method thereof
US11145682B2 (en) 2018-03-23 2021-10-12 Ordos Yuansheng Optoelectronics Co., Ltd. Array substrate and method for fabricating the same, display panel, display device
CN113206144A (zh) * 2021-04-25 2021-08-03 北海惠科光电技术有限公司 薄膜晶体管的制备方法、薄膜晶体管及显示面板

Also Published As

Publication number Publication date
TW200424724A (en) 2004-11-16
CN1519955B (zh) 2010-06-09
JP2004241774A (ja) 2004-08-26
US7709304B2 (en) 2010-05-04
CN1519955A (zh) 2004-08-11
US20070259289A1 (en) 2007-11-08

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Legal Events

Date Code Title Description
AS Assignment

Owner name: SAMSUNG ELECTRONIC CO., LTD., KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:PARK, WOON-YONG;LEE, WON-HEE;KIM, II-GON;AND OTHERS;REEL/FRAME:015544/0148

Effective date: 20040602

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION