US20040018752A1 - Method for manufacturing electrical contact element for testing electro device and electrical contact element thereby - Google Patents

Method for manufacturing electrical contact element for testing electro device and electrical contact element thereby Download PDF

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Publication number
US20040018752A1
US20040018752A1 US10/350,737 US35073703A US2004018752A1 US 20040018752 A1 US20040018752 A1 US 20040018752A1 US 35073703 A US35073703 A US 35073703A US 2004018752 A1 US2004018752 A1 US 2004018752A1
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US
United States
Prior art keywords
electrical contact
tip portion
contact element
trench
set forth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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US10/350,737
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English (en)
Inventor
Oug-Ki Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soulbrain ENG Co Ltd
Original Assignee
Phicom Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020020006367A external-priority patent/KR100358513B1/ko
Priority claimed from KR10-2002-0068402A external-priority patent/KR100475468B1/ko
Application filed by Phicom Corp filed Critical Phicom Corp
Publication of US20040018752A1 publication Critical patent/US20040018752A1/en
Assigned to PHICOM CORPORATION reassignment PHICOM CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LEE, OUG-KI
Priority to US11/352,658 priority Critical patent/US7579855B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06716—Elastic
    • G01R1/06727—Cantilever beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733—Geometry aspects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4092—Integral conductive tabs, i.e. conductive parts partly detached from the substrate

Definitions

  • the present invention pertains to a method for manufacturing an electrical contact element used to test an electronic device, and an electrical contact element manufactured thereby, and more particularly, the present invention relates to a method for manufacturing an electrical contact element capable of electrically testing an electronic device by being brought into contact with the electronic device to see whether the electronic device is in a normal state or not, and an electrical contact element manufactured thereby.
  • the present invention relates to a method for manufacturing an electrical contact element capable of electrically testing an electronic device by being increased in its physical force due to the presence of an armrest, to see whether the electronic device is in a normal state or not, and an electrical contact element manufactured thereby.
  • a semiconductor chip is realized on a semiconductor substrate by implementing a series of semiconductor manufacturing processes including an oxidization process, a diffusion process, an ion-implantation process, an etching process, a metalization process, and so on. Chips fabricated on semiconductor substrates are sorted into normal ones and defective ones through an electrical die sorting (EDS) test. Then, only the normal chips are placed under-slicing and packaging processes.
  • EDS electrical die sorting
  • an electrical contact element such as a probe card is brought into contact with a pad of a semiconductor chip to apply thereto an electric signal, and then, by detecting an electric signal responsive to the applied electric signal, it is possible to see whether the chip is in a normal state or not.
  • a flat panel display device such as a liquid crystal display (LCD) which is manufactured by implementing a series of flat panel display device manufacturing processes
  • an electrical contact element is brought into contact with a preselected portion of the flat panel display device to apply thereto an electric signal, and then, by detecting an electric signal responsive to the applied electric signal, it is confirmed whether the LCD panel is in a normal state or not.
  • the electrical contact element has an excellent electric conductivity, and tip portions of a plurality of electrical contact elements can be simultaneously brought into contact with a semiconductor chip pad to sufficiently satisfy an over-drive scheme.
  • a terminal of an electronic component 10 such as a printed circuit board (PCB) having formed thereon a predetermined circuit pattern, and the like, is connected with a post portion 12 .
  • the post portion 12 is connected with a beam portion 14 , and, in turn, the beam portion 14 is connected with a tip portion 16 .
  • the post portion 12 , beam portion 14 and tip portion 16 are individually provided and connected with one with another by adhesive means.
  • the beam portion 14 has a bar-shaped configuration of a constant width.
  • the tip portion 16 has a pyramid-shaped configuration which is four-cornered and has a pointed end.
  • the tip portion 16 of the electrical contact element is repeatedly brought into contact with a semiconductor chip pad by constant physical force F while having a desired OD characteristic, to apply a constant electric signal to the semiconductor chip and thereby confirm whether the semiconductor chip is in a normal state or not.
  • the conventional electrical contact element has a problem in that, since the tip portion has the pointed distal end, while the tip portion of the electrical contact element is repeatedly brought into contact with the pad of the semiconductor chip by constant physical force F, the tip portion is likely to pierce an oxide film formed on the pad and damage the pad, by which a defective proportion cannot but be increased when implementing subsequent semiconductor manufacturing processes such as a wire bonding process, and the like.
  • the tip portion of the conventional electrical contact element is cornered several times at its side, while the tip portion is brought into contact with the pad of the semiconductor chip, the tip portion is apt to become worn and produce particles by itself, which contaminate the highly integrated semiconductor chip.
  • the tip portion of the electrical contact element has the pointed distal end, a contact area between the tip portion and the, semiconductor chip pad cannot but be decreased, and thereby electric conductivity is reduced.
  • tip portions which initially have a tungsten needle-shaped configuration have been developed to have a V-shaped or a pyramid-shaped configuration.
  • the pyramid-shaped tip portion has been developed to have a truncated pyramid-shaped configuration.
  • the tungsten needle-shaped tip portion has a drawback in that, when pointing the distal end of the tip portion, since distal end pointing work is manually carried out, reproducibility and productivity of the tip portion are impaired. Also, due to the fact that the pyramid-shaped and truncated pyramid-shaped tip portions have angled corners, while the tip portions are repeatedly brought into contact with pads of semiconductor devices, the tip portions are likely to become worn on the corners. Therefore, it is necessary to relieve or remove sharpness of the corners.
  • the beam portion has the bar-shaped configuration, it cannot properly conform to the recent trend toward a fine pitch in a highly integrated semiconductor device. Also, when the electrical contact element is brought into contact with the pad of the semiconductor chip by the constant physical force F, stress is concentrated to a certain point on the beam portion and the beam portion is likely to be broken.
  • the beam portion has predetermined elasticity, as the length of the beam portion is shortened, elasticity of the beam portion is decreased.
  • the present invention has been made in an effort to solve the problems occurring in the related art, and an object of the present invention is to provide a method for manufacturing an electrical contact element used to test an electronic device, which can overcome the problem of the conventional art that, since a tip portion of the conventional electrical contact element is cornered several times at its side, while the tip portion is brought into contact with a pad of a semiconductor chip, the tip portion becomes worn and produces particles by itself, and an electrical contact element manufactured thereby.
  • Another object of the present invention is to provide a method for manufacturing an electrical contact element used to test an electronic device, which can overcome the problem of the conventional art that, since a tip portion of the conventional electrical contact element has a pointed distal end, electric conductivity is deteriorated, and an electrical contact element manufactured thereby.
  • Another object of the present invention is to provide a method for manufacturing an electrical contact element used to test an electronic device, which can overcome the problem of the conventional art that, since a tip portion of the conventional electrical contact element has a pointed distal end, while the tip portion is repeatedly brought into contact with a pad of a semiconductor chip by constant physical force, the tip portion pierces an oxide film formed on the pad and damages the pad and a defective proportion is increased when implementing subsequent semiconductor manufacturing processes such as a wire bonding process, and the like, and an electrical contact element manufactured thereby.
  • Another object of the present invention is to provide a method for manufacturing an electrical contact element used to test an electronic device, in which a length of a tip portion is increased to allow a desired OD characteristic to be easily accomplished, and an electrical contact element manufactured thereby.
  • Another object of the present invention is to provide a method for manufacturing an electrical contact element used to test an electronic device, which can properly conform to the recent trend toward a fine pitch required in an electronic device such as a highly integrated semiconductor chip, and an electrical contact element manufactured thereby.
  • Another object of the present invention is to provide a method for manufacturing an electrical contact element used to test an electronic device, which can overcome the problem of the conventional art that, while a tip portion of the conventional electrical contact element is repeatedly brought into contact with a pad of a semiconductor chip by constant physical force, stress is concentrated to a certain point on the beam portion and the beam portion is broken, and an electrical contact element manufactured thereby.
  • Another object of the present invention is to provide a method for manufacturing an electrical contact element used to test an electronic device, which can overcome the problem of the conventional art that, due to a small connection area between a beam portion and a tip portion of the conventional electrical contact element, when the electrical contact element is brought into contact with a pad of a semiconductor chip by constant physical force, stress is concentrated to the small connection area and the tip portion is broken, and an electrical contact element manufactured thereby.
  • Another object of the present invention is to provide a method for manufacturing an electrical contact element used to test an electronic device, which has improved reproducibility with respect to a beam portion and a tip portion thereof, and an electrical contact element manufactured thereby.
  • Still another object of the present invention is to provide a method for manufacturing an electrical contact element used to test an electronic device, which can minimize damage by particles and scratches formed on a pad of a device and has a tip portion of an increased contact area, thereby improving productivity, and an electrical contact element manufactured thereby.
  • Yet still another object of the present invention is to provide a method for manufacturing an electrical contact element used to test an electronic device, which can electrically test an electronic device by being increased in its physical force due to the presence of an armrest, to see whether the electronic device is in a normal state or not, and an electrical contact element manufactured thereby.
  • a method for manufacturing an electrical contact element used to test an electronic device by defining, on a sacrificial substrate, a trench in which a tip portion is to be formed, forming a protective film pattern in a manner such that the protective film pattern delimits an opened region in which a beam portion is to be formed and which is communicated with the trench, filling a conductive material into the opened region, and removing the sacrificial substrate and the protective film pattern to form the electrical contact element having the tip portion and the beam portion, the method comprising the step of: conducting one or more times, after defining the trench, anisotropic etching in the trench in such a way as to increase a depth of the trench and round an inner surface of the trench.
  • the step of conducting one or more times anisotropic etching in the trench in such a way as to increase a depth of the trench and round an inner surface of the trench is implemented by a reactive ion etching (RIE) process.
  • RIE reactive ion etching
  • the beam portion has a multi-stepped configuration which comprises a first bar-shaped part connected with the tip portion, a second bar-shaped part connected with the first part and having a width greater than the first part, and a third bar-shaped part connected with the second part and having a width greater than the second part.
  • the beam portion has a zigzagged configuration which comprises a first bar-shaped part connected with the tip portion, a second zigzagged part connected with the first part and zigzagged one or more times, and a third bar-shaped part connected with the second part.
  • a distal end of the tip portion has a truncated polygonal pyramid-shaped or a truncated cone-shaped configuration with a rounded distal end surface.
  • a distal end of the tip portion has a column-shaped configuration with a rounded distal end surface, and a projection is formed around a proximal end of the tip portion.
  • a method for manufacturing an electrical contact element used to test an electronic device by defining, on a sacrificial substrate, a trench in which a tip portion is to be formed, forming a first protective film pattern in a manner such that the first protective film pattern delimits a first opened region in which a beam portion is to be formed and which is communicated with the trench, filling a conductive material into the first opened region, and removing the sacrificial substrate and the first protective film pattern to form the electrical contact element having the tip portion and the beam portion, the method comprising the steps of: conducting one or more times, after defining the trench, anisotropic etching in the trench in such a way as to increase a depth of the trench and round an inner surface of the trench; filling the conductive material into the first opened region of a predetermined thickness delimited on the sacrificial substrate by the first protective layer, to form the tip portion and the beam portion, and then flattening an upper surface of
  • a distal end of the tip portion has a truncated polygonal pyramid-shaped, a truncated cone-shaped or a column-shaped configuration with a rounded distal end surface, and a projection is formed around a proximal end of the tip portion.
  • an electrical contact element used to test an electronic device comprising: a beam portion having a multi-stepped configuration which comprises a first bar-shaped part, a second bar-shaped part connected with the first part and having a width greater than the first part, and a third bar-shaped part connected at one thereof with the second part and having a width greater than the second part, the third part being connected at the other end thereof with an electronic component, through a bump; a trench defined on a sacrificial substrate at a position corresponding to a free end of the first part of the beam portion, by conducting one or more times a first isotropic etching process using a first protective film pattern as an etching mask, in a manner such that a bottom surface of the trench is rounded; and a tip portion formed by applying, after removing the first protective film pattern, a second protective film pattern on the sacrificial substrate, filling a conductive material into the trench, flattening an upper surface of a result
  • an electrical contact element used to test an electronic device comprising: a beam portion having a zigzagged configuration which comprises a first bar-shaped part connected with an electronic component through a bump, a second zigzagged part connected with the first part and zigzagged one or more times, and a third bar-shaped part connected with the second part; a trench defined on a sacrificial substrate at a position corresponding to a free end of the third part of the beam portion, by conducting one or more times a first isotropic etching process using a first protective film pattern as an etching mask, in a manner such that a bottom surface of the trench is rounded; and a tip portion formed by applying, after removing the first protective film pattern, a second protective film pattern on the sacrificial substrate, filling a conductive material into the trench, flattening an upper surface of a resultant product, removing the sacrificial substrate and the second protective film pattern by wet etch
  • the trench has a truncated polygonal pyramid-shaped, a truncated cone-shaped or a column-shaped section, with a side surface of the trench sloped.
  • a distal end of the tip portion has a column-shaped configuration with a rounded distal end surface, and first and second projections are formed around a proximal end of the tip portion.
  • an electrical contact element used to test an electronic device comprising: a sacrificial substrate formed, on a surface thereof, with a first photoresist of a predetermined thickness; a first opened region defined by patterning the first photoresist, for allowing a tip portion to be formed therein; a trench for allowing the tip portion to be formed therein by using a first photoresist pattern as an etching mask, the trench undergoing an anisotropic etching process to round the tip portion, the first photoresist pattern formed on the sacrificial substrate being removed by ashing; a zigzagged beam portion zigzagged one or more times and an armrest formed by filling, to a predetermined thickness and through implementing a chemical vapor deposition (CVD), physical vapor deposition (PVD) or plating process, a conductive material for the formation of the tip and beam portions into a second opened region delimited by a second photoresist pattern
  • CVD chemical vapor deposition
  • PVD physical vapor
  • an electrical contact element used to test an electronic device comprising: a sacrificial substrate formed, on a surface thereof, with a first photoresist of a predetermined thickness; a first opened region defined by patterning the first photoresist, for allowing a tip portion to be formed therein; a trench for allowing the tip portion to be formed therein by using a first photoresist pattern as an etching mask, the trench undergoing an anisotropic etching process to round the tip portion, the first photoresist pattern formed on the sacrificial substrate being removed by ashing; a zigzagged beam portion zigzagged one or more times and an armrest formed by filling, to a predetermined thickness and through implementing a chemical vapor deposition, physical vapor deposition or plating process, a conductive material for the formation of the tip and beam portions into a second opened region delimited by a second photoresist pattern on the sacrificial substrate
  • the armrest is formed between a desired position on the zigzagged part and a corresponding position on a surface of the electronic-component.
  • the armrest is formed on the beam portion in opposition to the tip portion.
  • the armrest is formed between a point on the zigzagged part of the beam portion which point is most adjacent to the tip portion and the a corresponding position on the surface of the electronic component.
  • FIGS. 1 a and 1 b are a cross-sectional view and a perspective view illustrating the conventional electrical contact element used to test an electronic device
  • FIGS. 2 through 10 b are cross-sectional views explaining a method for manufacturing an electrical contact element used to test an electronic device, in accordance with a first embodiment of the present invention
  • FIG. 11 a is a plan view illustrating a beam portion of the electrical contact element used to test an electronic device, according to the present invention
  • FIG. 11 b is a plan view illustrating another beam portion of the electrical contact element used to test an electronic device, according to the present invention.
  • FIGS. 12 through 18 b are cross-sectional views explaining a method for manufacturing an electrical contact element used to test an electronic device, in accordance with a second embodiment of the present invention.
  • FIGS. 19 through 25 b are cross-sectional views explaining a method for manufacturing an electrical contact element used to test an electronic device, in accordance with a third embodiment of the present invention.
  • FIG. 26 is a perspective view illustrating a first electrical contact element manufactured by the method for manufacturing an electrical contact element used to test an electronic device, in accordance with the first embodiment of the present invention
  • FIG. 27 is a perspective view illustrating a second electrical contact element manufactured by the method for manufacturing an electrical contact element used to test an electronic device, in accordance with the first embodiment of the present invention
  • FIG. 28 is a perspective view illustrating a third electrical contact element manufactured by the method for manufacturing an electrical contact element used to test an electronic device, in accordance with the first embodiment of the present invention
  • FIG. 29 is a perspective view illustrating a fourth electrical contact element manufactured by the method for manufacturing an electrical contact element used to test an electronic device, in accordance with the first embodiment of the present invention.
  • FIG. 30 is a perspective view illustrating a fifth electrical contact element manufactured by the method for manufacturing an electrical contact element used to test an electronic device, in accordance with the second embodiment of the present invention.
  • FIG. 31 is a perspective view illustrating a sixth electrical contact element manufactured by the method for manufacturing an electrical contact element used to test an electronic device, in accordance with the second embodiment of the present invention.
  • FIG. 32 is a perspective view illustrating a seventh electrical contact element manufactured by the method for manufacturing an electrical contact element used to test an electronic device, in accordance with the second embodiment of the present invention.
  • FIG. 33 is a perspective view illustrating an eighth electrical contact element manufactured by the method for manufacturing an electrical contact element used to test an electronic device, in accordance with the second embodiment of the present invention.
  • FIG. 34 is a plan view exemplifying a layout of electrical contact elements used to test an electronic device, according to the present invention.
  • FIG. 35 is a plan view exemplifying another layout of electrical contact elements used to test an electronic device, according to the present invention.
  • FIG. 36 is a graph depicting distribution of stress applied to a bar-shaped beam portion of the conventional electrical contact element used to test an electronic device
  • FIG. 37 is a graph depicting distribution of stress applied to a zigzagged beam portion of the electrical contact element used to test an electronic device, according to the present invention.
  • FIGS. 38 a and 38 b are a cross-sectional view and a perspective view illustrating an electrical contact element used to test an electronic device, in accordance with a fourth embodiment of the present invention.
  • FIGS. 39 a and 39 b are a cross-sectional view and a perspective view illustrating an electrical contact element used to test an electronic device, in accordance with a fifth embodiment of the present invention.
  • FIGS. 40 a and 40 b are a cross-sectional view and a perspective view illustrating an electrical contact element used to test an electronic device, in accordance with a sixth embodiment of the present invention.
  • FIGS. 41 ( a ) through 41 ( f ) are transverse cross-sectional views illustrating beam portions of the electrical contact elements shown in FIGS. 38 a through 40 b;
  • FIGS. 42 a through 42 i are cross-sectional views explaining a method for manufacturing the electrical contact element used to test an electronic device, shown in FIGS. 38 a and 38 b;
  • FIGS. 43 a through 43 d are cross-sectional views explaining a method for manufacturing the electrical contact element used to test an electronic device, shown in FIGS. 39 a and 39 b;
  • FIGS. 44 a through 44 d are cross-sectional views explaining a method for manufacturing the electrical contact element used to test an electronic device, shown in FIGS. 40 a and 40 b;
  • FIG. 45 a is a graph depicting results obtained by simulating distribution of stress applied to a beam portion of the electrical contact element used to test an electronic device, according to the present invention.
  • FIG. 45 b is a graph depicting results obtained by simulating distribution of stress applied to a beam portion of the conventional electrical contact element used to test an electronic device.
  • FIGS. 2 through 10 b are cross-sectional views explaining a method for manufacturing an electrical contact element used to test an electronic device, in accordance with a first embodiment of the present invention.
  • a first protective film 22 of a predetermined thickness is formed on an entire surface of a sacrificial substrate 20 made of silicon having a fixed orientation such as (1 0 0).
  • the first protective film 22 comprises a thin film such as a photoresist and an oxide film.
  • the photoresist is formed by a spin coating process in which the photoresist is poured onto the sacrificial substrate 20 while the sacrificial substrate 20 is rotated, and the oxide film is formed by the conventional thermal oxidation process.
  • a first protective film pattern 24 having a first opened region (not numbered) is formed.
  • the first protective film pattern 24 comprising the photoresist is formed by positioning, exposing and developing a reticle having realized thereon a circuit pattern, on the first protective film 22 . Further, the first protective film pattern 24 comprising the oxide film is formed by coating the photoresist on the first protective film 22 , preparing a photoresist pattern through exposing and developing the resultant product, and implementing a wet or dry etching process using the photoresist pattern as an etching mask.
  • a trench in which a tip portion is to be formed is defined on the sacrificial substrate 20 .
  • the first etching process comprises a wet etching process employing a chemical in which potassium hydroxide (KOH) and deionized water are mixed at a predetermined ratio.
  • KOH potassium hydroxide
  • the sacrificial substrate 20 having the fixed orientation is anisotropically etched to define a trench 26 having a truncated polygonal pyramid-shaped or a truncated cone-shaped configuration.
  • the first etching process may comprise a wet etching process employing a chemical in which hydrogen fluoride (HF), nitric acid (HNO 3 ) and acetic acid (CH 3 COOH) are mixed at a predetermined ratio.
  • HF hydrogen fluoride
  • HNO 3 nitric acid
  • CH 3 COOH acetic acid
  • the wet etching process employing the chemical the sacrificial substrate 20 having the fixed orientation such as (1 0 0) is isotropically etched to define a trench 28 having a configuration of a column, for example, a square column, with a bottom surface rounded.
  • the sacrificial substrate 20 is also etched around an upper end of the first opened region and below the first protective film pattern 24 .
  • the first protective film pattern 24 applied on the sacrificial substrate 20 which is defined with the trench 26 of the truncated polygonal pyramid-shaped or the truncated cone-shaped configuration with a side surface sloped, by the first anisotropic etching process, is used as an etching mask.
  • a second etching process is implemented employing a gas mixture in which SF 6 , C 4 F 8 and O 2 gases are mixed at a preselected ratio.
  • the second etching process which is a kind of deep trench etching is implemented by reactive ion etching (RIE) which is called a Bosh process.
  • RIE reactive ion etching
  • a depth of the trench 26 which is defined by the first etching process and has the truncated polygonal pyramid-shaped or the truncated cone-shaped configuration is increased to 30 ⁇ m ⁇ 500 ⁇ m, and at the same time, a bottom surface of the trench 26 is rounded.
  • the second etching process may be implemented one or more times.
  • the first protective film pattern 24 applied on the sacrificial substrate 20 which is defined with the trench 28 of the column-shaped configuration with the inner surface rounded, by the first etching process, is used as an etching mask.
  • a second etching process is implemented employing a gas mixture in which SF 6 , C 4 F 8 and O 2 gases are mixed at a preselected ratio.
  • the second etching process which is a kind of deep trench etching is implemented by RIE which is called a Bosh process.
  • RIE which is called a Bosh process.
  • the second etching process may be implemented one or more times.
  • a second protective film pattern 30 which comprises a photoresist of a preset thickness and delimits a second opened region (not numbered) is formed on the entire surface of the sacrificial substrate 20 which is defined with the trench 26 of the truncated polygonal pyramid-shaped or the truncated cone-shaped configuration with the bottom surface rounded, by the second etching process.
  • a second protective film pattern 30 which comprises a photoresist of a preset thickness and delimits a second opened region (not numbered) is formed on the entire surface of the sacrificial substrate 20 which is defined with the trench 26 of the truncated polygonal pyramid-shaped or the truncated cone-shaped configuration with the bottom surface rounded, by the second etching process.
  • a second protective film pattern 31 which comprises a photoresist of a preset thickness and delimits a second opened region (not numbered) is formed on the entire surface of the sacrificial substrate 20 which is defined with the trench 28 of the column-shaped configuration with the bottom surface rounded, by the second etching process.
  • the second protective film pattern 30 is formed by coating, exposing and developing a photoresist.
  • the second protective film patterns 30 and 31 are formed to delimit the second opened regions on the sacrificial substrate 20 , in a manner such that the beam portions are formed in the second opened regions and the second opened regions are communicated with the trenches 26 and 28 , respectively.
  • FIG. 7 a After the second protective film pattern 30 is formed on the sacrificial substrate 20 and a conductive material 32 is filled into the second opened region by implementing a CVD, PVD or plating process, to have the preset thickness, an upper surface of a resultant product is flattened.
  • FIG. 7 b after a conductive material 34 is formed on the sacrificial substrate 20 which is formed with the second protective film pattern 31 , to have the preset thickness, by implementing the CVD, PVD or plating process, an upper surface of a resultant product is flattened.
  • the conductive material is made of nickel alloy, etc., and the upper surface of the sacrificial substrate 20 which is formed with the conductive material can be flattened by chemical mechanical polishing, etchback, grinding, etc.
  • the second protective film pattern 31 (see FIG. 7 b ) is removed by implementing a wet etching process employing a chemical or a dry etching process such as ashing, and the like.
  • each of the beam portions 36 and 38 has, as shown in FIG. 11 a , a multi-stepped configuration which comprises a first bar-shaped part 40 connected with each of the tip portions formed in the trenches 26 and 28 , a second bar-shaped part 42 connected with the first part 40 and having a width greater than the first part 40 , and a third bar-shaped part 44 connected with the second part 42 and having a width greater than the second part 42 .
  • each of the beam portions 36 and 38 may have, as shown in FIG. 11 b , a zigzagged configuration which comprises a first bar-shaped part 46 connected with each of the tip portions formed in the trenches 26 and 28 , a second zigzagged part 48 connected with the first part 46 and zigzagged one or more times, and a third bar-shaped part 50 .
  • the third parts 40 and 50 may be connected with the respective tip portions formed in the trenches 26 and 28 .
  • the second zigzagged part 48 of the zigzagged beam portion 38 has a bent angle of 30° ⁇ 170°, preferably of about 90°. It is to be noted that the second part 48 may be zigzagged one or more times. In each of the beam portions 36 and 38 , a width is decreased from a position of a bump toward that of the tip portion, so as to easily conform to the recent trend toward a fine pitch as in the multi-stepped configuration.
  • the beam portion 36 formed on the sacrificial substrate 20 which is defined with the trench 26 of the truncated polygonal pyramid-shaped or the truncated cone-shaped configuration with the bottom surface rounded is connected with an electronic component 60 having realized thereon a circuit pattern, by the medium of a bump 62 .
  • the beam portion 38 formed on the sacrificial substrate 20 which is defined with the trench 28 of the column-shaped configuration with the bottom surface rounded is connected with an electronic component 64 having realized thereon a circuit pattern, by the medium of a bump 66 .
  • the beam portions 36 and 38 realized on the sacrificial substrate 20 and the electronic components 60 and 64 are connected with each other, respectively, in a manner such that, after the bumps 62 and 66 are placed between the beam portions 36 and 38 and the electronic components 60 and 64 , the bumps 62 and 66 and the beam portions 36 and 38 are coupled with each other by soldering, brazing, plating, a conductive adhesive, etc.
  • the beam portion 36 can be freed to complete an electrical contact element 35 used to test the electronic device.
  • the beam portion 38 can be freed to complete an electrical contact element 39 used to test the electronic device.
  • FIG. 26 is a perspective view illustrating a first electrical contact element manufactured by the method for manufacturing an electrical contact element used to test an electronic device, in accordance with the first embodiment of the present invention.
  • a terminal (not numbered) of an electronic component 100 such as a printed circuit board (PCB) having realized thereon a predetermined circuit pattern, and a third part 108 of the beam portion of the electrical contact element 106 are connected with each other by the medium of a bump 102 and by virtue of a bonding portion 104 .
  • PCB printed circuit board
  • the electrical contact element 106 has the beam portion of a multi-stepped configuration which comprises a first bar-shaped part 112 , a second bar-shaped part 110 connected with the first part 112 and having a width greater than the first part 112 , and a third bar-shaped part 108 connected with the second part 110 and having a width greater than the second part 110 .
  • a free end of the first part 112 of the beam portion is integrally connected with a tip portion 114 which is to be brought into contact with a pad of a semiconductor chip by constant physical force.
  • the tip portion 114 has a truncated quadrangular pyramid-shaped configuration with a distal end surface rounded.
  • a length of the tip portion 114 is extended to 30 ⁇ m ⁇ 500 ⁇ m in consideration of an OD characteristic.
  • the tip portion 114 has a length of 100 ⁇ m.
  • the tip portion 114 of the electrical contact element 106 has the quadrangular pyramid-shaped configuration with the distal end surface rounded, while the tip portion 114 is repeatedly brought into contact with the pad of the semiconductor chip, it is possible to prevent the tip portion 114 from becoming worn and producing particles by itself.
  • the distal end surface of the tip portion 114 is rounded, while the tip portion 114 of the electrical contact element 106 is repeatedly brought into contact with the pad of the semiconductor chip by constant physical force, it is possible to prevent the tip portion 114 from piercing an oxide film formed on the pad and damage the pad, whereby it is possible to prevent a defective proportion from being increased when implementing subsequent semiconductor manufacturing processes such as a wire bonding process, and the like.
  • the tip portion 114 has a length of 30 ⁇ m ⁇ 500 ⁇ m and, in this preferred embodiment, 100 ⁇ m, it is possible to easily adjust an OD characteristic.
  • the beam portion of the electrical contact element 106 has the multi-stepped configuration which comprises the first bar-shaped part 112 connected with the tip portion 114 , the second bar-shaped part 110 connected with the first part 112 and having a width greater than the first part 112 , and the third bar-shaped part 108 connected with the second part 110 and having a width greater than the second part 110 , it is possible to conform to the recent trend toward a fine pitch in an electronic device such as a highly integrated semiconductor device.
  • FIG. 27 is a perspective view illustrating a second electrical contact element manufactured by the method for manufacturing an electrical contact element used to test an electronic device, in accordance with the first embodiment of the present invention.
  • the second electrical contact element 115 is characterized in that, as shown in FIG. 27, the tip portion 114 of the first electrical contact element 106 is replaced with a tip portion 116 which is formed at a proximal end thereof with a projection 118 and a distal end of a column-shaped configuration with a distal end surface rounded.
  • a length of the tip portion 116 is extended to 30 ⁇ m ⁇ 500 ⁇ m in consideration of an OD characteristic.
  • the tip portion 116 has a length of 100 ⁇ m.
  • FIG. 28 is a perspective view illustrating a third electrical contact element manufactured by the method for manufacturing an electrical contact element used to test an electronic device, in accordance with the first embodiment of the present invention.
  • the beam portion of the first electrical contact element 106 is replaced with a beam portion having a zigzagged configuration.
  • the beam portion has, as shown in FIG. 28, a first bar-shaped part 122 , a zigzagged second part 124 connected with the first part 122 , and a third bar-shaped part 126 connected with the second part 124 .
  • the second zigzagged part 124 of the beam portion has a bent angle of 30° ⁇ 170°, preferably of about 90°. It is to be noted that the second part 124 may be zigzagged one or more times.
  • the beam portion of the third electrical contact element 120 has the zigzagged configuration, in addition to the working effects accomplished by the first electrical contact element 106 , when the tip portion 114 is brought into contact with the pad of the semiconductor chip by constant physical force, as a length of the beam portion is increased when measured from the bump 102 to the tip portion 114 , stress applied to the beam portion can be dispersed and the beam portion is prevented from being broken due to concentrated stress application.
  • FIG. 36 is a graph depicting results of simulating distribution of stress applied to a bar-shaped beam portion of the conventional electrical contact element used to test an electronic device
  • FIG. 37 is a graph depicting results of simulating distribution of stress applied to a zigzagged beam portion of the electrical contact element used to test an electronic device, according to the present invention.
  • the third electrical contact element 120 having the beam portion of the zigzagged configuration is decreased in its width from the position of a bump 102 toward that of the tip portion 114 , it is possible to easily conform to the recent trend toward a fine pitch in a highly integrated semiconductor device.
  • FIG. 29 is a perspective view illustrating a fourth electrical contact element manufactured by the method for manufacturing an electrical contact element used to test an electronic device, in accordance with the first embodiment of the present invention.
  • the fourth electrical contact element 121 is characterized in that the beam portion of the first electrical contact element 106 is replaced with a beam portion of a zigzagged configuration which has a first bar-shaped part 122 , a second zigzagged part 124 connected with the first part 122 , and a third bar-shaped part 126 connected with the second part 124 .
  • the fourth electrical contact element 121 is also characterized in that a tip portion 116 is provided on the third part 126 and has a proximal end around which a projection 118 is formed and a distal end of a column-shaped configuration with a distal end surface rounded.
  • the fourth electrical contact element 121 can simultaneously accomplish the working effects obtained by the tip portion 116 of the second electrical contact element 115 and working effects obtained by the beam portion of the third electrical contact element 120 .
  • FIGS. 12 through 18 b are cross-sectional views explaining a method for manufacturing an electrical contact element used to test an electronic device, in accordance with a second embodiment of the present invention.
  • a first protective film of a predetermined thickness is formed on an entire surface of a sacrificial substrate 60 made of silicon having a fixed orientation such as (1 0 0).
  • the first protective film comprises a thin film such as a photoresist and an oxide film.
  • the sacrificial substrate 60 is anisotropically etched to define a trench 64 having a truncated configuration of a polygonal pyramid such as a quadrangular pyramid, or a truncated configuration of a cone.
  • a side surface of the trench 64 is sloped by a predetermined angle.
  • a first etching process for isotropically etching the sacrificial substrate 60 comprises a wet etching process employing a chemical including potassium hydroxide (KOH), etc.
  • a second protective film of a predetermined thickness which comprises a thin film such as a photoresist, an oxide film, and the like, is formed on the entire surface of the sacrificial substrate 60 .
  • a second protective film pattern 66 is formed in a manner such that both side end parts of the trench 64 are closed and only a center part of the trench 64 is opened.
  • the second etching process comprises a wet etching process employing a chemical in which potassium hydroxide (KOH) and deionized water are mixed at a predetermined ratio.
  • KOH potassium hydroxide
  • the trench 64 is anisotropically etched to define a trench 68 having a truncated polygonal pyramid-shaped or a truncated cone-shaped configuration so that the trench 68 is further deepened.
  • the second etching process may comprise a wet etching process employing a chemical in which hydrogen fluoride (HF), nitric acid (HNO 3 ) and acetic acid (CH 3 COOH) are mixed at a predetermined ratio.
  • HF hydrogen fluoride
  • HNO 3 nitric acid
  • CH 3 COOH acetic acid
  • the sacrificial substrate 60 is isotropically etched around an upper end of the second opened region and below the second protective film pattern 66 .
  • the second protective film pattern 66 applied on the sacrificial substrate 60 which is defined with the trench 68 of the truncated pyramid-shaped configuration by the second etching process, is used as an etching mask. In this state, a third etching process is implemented again.
  • the third etching process comprises the same RIE process as in the first embodiment which is well known in the art.
  • a depth of the trench 68 which is defined by the second etching process is further increased. It is to be noted that the third etching process may be implemented one or more times.
  • the bottom surface of the trench 68 having the truncated polygonal pyramid-shaped or the truncated cone-shaped configuration is rounded in the same manner as the first embodiment.
  • the second protective film pattern 66 applied on the sacrificial substrate which is defined with the trench 70 of the column-shaped configuration with the rounded bottom surface, by the second etching process, is used as an etching mask. In this state, a third etching process is implemented again.
  • the third etching process comprises the same RIE process as in the first embodiment, which is well known in the art.
  • a depth of the trench 70 which is defined by the second etching process is further increased, whereby the column-shaped trench 70 having at a proximal end thereof a depression is defined.
  • the third etching process may be implemented one or more times.
  • a third protective film pattern 72 which comprises a photoresist of a preset thickness and delimits a third opened region (not numbered) is formed on the entire surface of the sacrificial substrate 60 which is defined with the trench 68 of the truncated polygonal pyramid-shaped or the truncated cone-shaped configuration by the third etching process.
  • FIG. 16 b after the second protective film pattern 66 (see FIG.
  • a third protective film pattern 72 which comprises a photoresist of a preset thickness and delimits a third opened region (not numbered) is formed on the entire surface of the sacrificial substrate 60 which is defined with the trench 70 of the column-shaped configuration with the depression defined at the proximal end thereof, by the third etching process.
  • the third protective film pattern 72 can be formed by the same method used when forming the second protective film pattern 66 .
  • the third protective film patterns 72 are formed to delimit the third opened regions on the sacrificial substrate 60 , in a manner such that the beam portions are formed in the third opened regions and the third opened regions are communicated with the trenches 68 and 70 , respectively.
  • FIG. 17 a After a conductive material 73 is filled, in the amount of the preset thickness, into the third opened region delimited on the sacrificial substrate 60 by the third protective film pattern 72 , through implementing a CVD, PVD or plating process, an upper surface of a resultant product is flattened.
  • FIG. 17 b after a conductive material 74 is filled, in the amount of the preset thickness, into the third opened region delimited on the sacrificial substrate 60 by the third protective film pattern 72 , through implementing a CVD, PVD or plating process, an upper surface of a resultant product is flattened.
  • the conductive material is made of nickel alloy, etc., and the upper surfaces of resultant products which are formed by the conductive materials 73 and 74 can be flattened by chemical mechanical polishing (CMP), etchback, grinding, etc.
  • CMP chemical mechanical polishing
  • the beam portion 76 is formed in a manner such that it is connected with the tip portion.
  • the beam portion 78 is formed in a manner such that it is connected with the tip portion.
  • the third protective film pattern 72 can be removed by implementing a wet etching process employing a chemical or a dry etching process such as ashing, and the like.
  • each of the beam portions 76 and 78 has a multi-stepped configuration which comprises a first bar-shaped part connected with each of the tip portions formed in the trenches 68 and 70 , a second bar-shaped part having a width greater than the first part, and a third bar-shaped part having a width greater than the second part.
  • each of the beam portions 76 and 78 may have a zigzagged configuration which comprises a first bar-shaped part connected with each of the tip portions formed in the trenches 68 and 70 , a second zigzagged part, and a third bar-shaped part.
  • a process is implemented to connect the beam portions 76 and 78 formed on the sacrificial substrate 60 , with an electronic component having realized thereon a desired circuit pattern, by the medium of a bump and through bonding. Then, by removing the sacrificial substrate 60 by wet etching, etc., the electrical contact element used to test an electronic device is completed.
  • FIG. 30 is a perspective view illustrating a fifth electrical contact element manufactured by the method for manufacturing an electrical contact element used to test an electronic device, in accordance with the second embodiment of the present invention.
  • the fifth electrical contact element 206 used to test an electronic device in the same manner as the first electrical contact element 106 , as shown in FIG. 30, a terminal (not numbered) of an electronic component 200 such as a printed circuit board (PCB) having realized thereon a predetermined circuit pattern, and the electrical contact element 206 are connected with each other by the medium of a bump 202 and by virtue of a bonding portion 204 .
  • PCB printed circuit board
  • the electrical contact element 206 has a beam portion of a multi-stepped configuration which comprises a first bar-shaped part 212 , a second bar-shaped part 210 connected with the first part 212 and having a width greater than the first part 212 , and a third bar-shaped part 208 connected with the second part 210 and having a width greater than the second part 210 .
  • the fifth electrical contact element 206 is characterized in that a tip portion 215 is integrally provided on a free end of the third part 121 of the beam portion to be brought into contact with a pad of a semiconductor chip by constant physical force, and the tip portion 215 has a proximal end around which a projection 214 is formed and a distal end of a quadrangular column-shaped configuration with a distal end surface rounded.
  • a length of the tip portion 212 is extended to 30 ⁇ m ⁇ 500 ⁇ m in consideration of an OD characteristic.
  • the tip portion 212 has a length of 100 ⁇ m.
  • the fifth electrical contact element 206 when the electrical contact element 206 is brought into contact with the pad of the semiconductor chip by constant physical force, due to the presence of the projection 214 , it is possible to disperse stress applied to the proximal end of the tip portion 215 and the tip portion 215 is prevented from being broken.
  • FIG. 31 is a perspective view illustrating a sixth electrical contact element manufactured by the method for manufacturing an electrical contact element used to test an electronic device, in accordance with the second embodiment of the present invention.
  • the sixth electrical contact element 207 is characterized in that the tip portion 215 of the aforementioned fifth electrical contact element 206 is replaced with a tip portion 216 in which a first projection is formed around a proximal end, a second projection connected with the first projection 220 and having a sectional area smaller than the first projection 220 is formed at a middle part of the tip portion 216 , and a distal end connected with the second projection 218 and having a section smaller than the second projection 218 has a column-shaped configuration with a distal end surface rounded.
  • the sixth electrical contact element 207 due to the presence of the first and second projections 220 and 218 , when the electrical contact element 207 is brought into contact with a pad of a semiconductor chip by constant physical force, it is possible to more effectively disperse stress applied to the proximal end of the tip portion 216 and thereby the tip portion 216 is prevented from being broken.
  • FIG. 32 is a perspective view illustrating a seventh electrical contact element manufactured by the method for manufacturing an electrical contact element used to test an electronic device, in accordance with the second embodiment of the present invention.
  • the seventh electrical contact element 230 is characterized in that the beam portion of the aforementioned fifth electrical contact element 206 is replaced with a beam portion of a zigzagged configuration which has a first bar-shaped part 232 , a second zigzagged part 234 connected with the first part 232 , and a third bar-shaped part 236 connected with the second part 234 .
  • the seventh electrical contact element 230 is formed to have the zigzagged configuration, in addition to the working effects obtained by the fifth electrical contact element 206 , when the tip portion is brought into contact with the pad of the semiconductor chip by constant physical force, it is possible to disperse stress applied to the beam portion and the tip portion is prevented from being broken.
  • FIG. 33 is a perspective view illustrating an eighth electrical contact element manufactured by the method for manufacturing an electrical contact element used to test an electronic device, in accordance with the second embodiment of the present invention.
  • the seventh electrical contact element 230 is characterized in that the beam portion of the aforementioned fifth electrical contact element 206 is replaced with a beam portion of a zigzagged configuration which has a first bar-shaped part 232 , a second zigzagged part 234 connected with the first part 232 , and a third bar-shaped part 236 connected with the second part 234 , and the tip portion 215 of the aforementioned fifth electrical contact element 206 is replaced with a tip portion 216 in which a first projection is formed around a proximal end, a second projection connected with the first projection 220 and having a sectional area smaller than the first projection 220 is formed at a middle part of the tip portion 216 , and a distal end connected with the second projection 218 and having a section smaller than the second projection 218 has a column-shaped configuration with a distal end surface rounded.
  • the eighth electrical contact element 231 it is possible to simultaneously accomplish the working effects obtained by the tip portion 216 of the sixth electrical contact element 207 and the working effects obtained by the beam portion of the seventh electrical contact element 234 .
  • FIGS. 19 through 25 b are cross-sectional views explaining a method for manufacturing an electrical contact element used to test an electronic device, in accordance with a third embodiment of the present invention.
  • a first protective film of a predetermined thickness is formed on an entire surface of a sacrificial substrate 80 made of silicon having a fixed orientation such as (1 0 0).
  • the first protective film comprises a thin film such as a photoresist and an oxide film.
  • the sacrificial substrate 80 is isotropically etched to define a trench 84 having a configuration of a quadrangular well in which a tip portion is to be formed.
  • a first etching process comprises a wet etching process employing a chemical in which hydrogen fluoride (HF), nitric acid (HNO 3 ) and acetic acid (CH 3 COOH) are mixed at a predetermined ratio.
  • HF hydrogen fluoride
  • HNO 3 nitric acid
  • CH 3 COOH acetic acid
  • a second protective film of a predetermined thickness which comprises a thin film such as a photoresist, an oxide film, and the like, is formed on the entire surface of the sacrificial substrate 80 .
  • a second protective film pattern 86 is formed in a manner such that both side end parts of the trench 84 are closed and only a center part of the trench 84 is opened.
  • the second etching process comprises a wet etching process employing a chemical in which potassium hydroxide (KOH) and deionized water are mixed at a predetermined ratio.
  • KOH potassium hydroxide
  • the trench 84 is anisotropically etched to define a trench 88 having a truncated polygonal pyramid-shaped or a truncated coned-shaped configuration so that the trench 84 is made further deepened.
  • the second etching process may comprise a wet etching process employing a chemical in which hydrogen fluoride (HF), nitric acid (HNO 3 ) and acetic acid (CH 3 COOH) are mixed at a predetermined ratio.
  • HF hydrogen fluoride
  • HNO 3 nitric acid
  • CH 3 COOH acetic acid
  • the trench 84 is isotropically etched to define a trench 90 of a column-shaped configuration with a proximal end depressed and a bottom surface rounded.
  • the sacrificial substrate 80 is isotropically etched around an upper end of the second opened region and below the second protective film pattern 86 .
  • the second protective film pattern 86 applied on the sacrificial substrate 80 which is defined with the trench 88 of the truncated pyramid-shaped configuration by the second etching process, is used as an etching mask. In this state, a third etching process is implemented again.
  • the third etching process comprises the same RIE process as in the first embodiment which is well known in the art.
  • a depth of the trench 88 which is defined by the second etching process is further increased and a bottom surface of the trench 88 is rounded.
  • the third etching process may be implemented one or more times.
  • the second protective film pattern 86 applied on the sacrificial substrate which is defined with the trench 90 of the column-shaped configuration by implementing the second etching process, is used as an etching mask. In this state, a third etching process is again implemented.
  • the third etching process comprises the same RIE process as in the first embodiment which is well known in the art.
  • a depth of the trench 90 which is defined by the second etching process is further increased, whereby the column-shaped trench 90 having the proximal end depressed is defined.
  • the third etching process may be implemented one or more times.
  • a third protective film pattern 92 which comprises a photoresist of a predetermined thickness and delimits a third opened region (not numbered), is formed on the entire surface of the sacrificial substrate 80 which is defined with the trench 88 of the truncated polygonal pyramid-shaped or the truncated cone-shaped configuration.
  • a third protective film pattern 92 which comprises a photoresist of a predetermined thickness and delimits a third opened region (not numbered) is formed on the entire surface of the sacrificial substrate 80 which is defined with the trench 90 of the column-shaped configuration with proximal end depressed.
  • the third protective film patterns 92 are formed to delimit the third opened regions on the sacrificial substrate 80 , in a manner such that the beam portions are formed in the third opened regions and the third opened regions are communicated with the trenches 88 and 90 , respectively.
  • the conductive materials 93 and 94 are made of nickel alloy, etc., and the upper surfaces of resultant products which are formed by the conductive materials 93 and 94 can be flattened by CMP, etchback, grinding, etc.
  • a beam portion 96 is formed in a manner such that it is connected with a tip portion having continuously formed around the proximal end thereof two projections.
  • the beam portion 98 is formed in a manner such that it is connected with the tip portion having two projections.
  • the third protective film pattern 92 can be removed by implementing a wet etching process employing a chemical or a dry etching process such as ashing, and the like.
  • each of the beam portions 96 and 98 has a multi-stepped configuration which comprises a first bar-shaped part connected with each of the tip portions formed in the trenches 88 and 90 , a second bar-shaped part having a width greater than the first part, and a third bar-shaped part having a width greater than the second part.
  • each of the beam portions 96 and 98 may have a zigzagged configuration which comprises a first bar-shaped part connected with each of the tip portions formed in the trenches 88 and 90 , a second zigzagged part, and a third bar-shaped part.
  • a process is implemented to connect the beam portions 96 and 98 formed on the sacrificial substrate 80 with an electronic component having realized thereon a desired circuit pattern, by the medium of a bump and through bonding. Then, by removing the sacrificial substrate 80 by wet etching, etc., the electrical contact element used to test an electronic device is completed.
  • FIGS. 38 a and 38 b are a cross-sectional view and a perspective view illustrating an electrical contact element used to test an electronic device, in accordance with a fourth embodiment of the present invention.
  • a terminal of an electronic component 20 such as a PCB having realized thereon a predetermined circuit pattern, and a post portion 22 comprising a bump of a predetermined size, etc. are connected with each other.
  • a beam portion 24 which is formed at an end thereof with a tip portion 26 is connected with the post portion 22 by soldering, brazing, plating, a conductive adhesive, etc.
  • the beam portion 24 has a zigzagged configuration having at least one zigzagged part.
  • An armrest 30 according to the present invention is provided on a surface of the zigzagged part of the beam portion 24 which surface is farthest from the tip portion 26 , in a manner such that the armrest 30 is positioned adjacent to the tip portion 26 in a horizontal direction.
  • the beam portion 24 of the electrical contact element according to the present invention has a zigzagged configuration in that a first bar-shaped part 100 of a predetermined length, a second part 102 and a third part 104 are bent at a preset angle to form two bent segments.
  • an armrest 106 is provided on a surface of the beam portion between the second and third parts 102 and 103 adjacent to a bending point, and a tip portion 108 is formed at a free end of the third part 104 .
  • the beam parts 24 of the electrical contact elements may have zigzagged configurations in that bar-shaped first parts 110 , 120 , 130 , 140 and 150 , second parts 112 , 122 , 132 , 142 and 152 , third parts 114 , 124 , 134 , 144 and 154 , and fourth parts 116 , 126 , 136 , 146 and 156 are bent at predetermined angles to form three bent segments.
  • armrests 118 , 128 , 138 , 148 and 158 are provided on one surfaces of the beam portions between the second parts 112 , 122 , 132 , 142 and 152 and the third parts 114 , 124 , 134 , 144 and 154 adjacent to bending points.
  • Tip portions 119 , 129 , 139 , 149 and 159 are formed at free ends of the fourth parts 116 , 126 , 136 , 146 and 156 .
  • the tip portion 26 of the electrical contact element can be brought into contact with a semiconductor chip pad by constant physical force while having a desired OD characteristic, to apply a constant electric signal to the semiconductor chip and thereby confirm whether the semiconductor chip is in a normal state or not.
  • the beam portion 24 is bent by the physical force, whereby the tip portion 26 is brought into contact with the semiconductor chip pad and the armrest 30 formed on the surface of the beam portion 24 is brought into contact with the electronic component 20 .
  • FIGS. 39 a and 39 b are a cross-sectional view and a perspective view illustrating an electrical contact element used to test an electronic device, in accordance with a fifth embodiment of the present invention.
  • the electrical contact element according to this embodiment of the present invention is constructed in the same manner as the fourth embodiment, except that the armrest 50 is provided on the electronic component 40 at a position corresponding to a bent part of the beam portion 44 which is adjacent to the tip portion 46 .
  • the tip portion 46 of the electrical contact element can be brought into contact with a semiconductor chip pad by constant physical force while having a desired OD characteristic, to apply a constant electric signal to the semiconductor chip and thereby confirm whether the semiconductor chip is in a normal state or not.
  • the beam portion 44 is bent by the physical force, whereby the tip portion 46 is brought into contact with the semiconductor chip pad and the armrest 50 formed on the electronic component 40 is brought into contact with one surface of the beam portion 44 .
  • FIGS. 40 a and 40 b are a cross-sectional view and a perspective view illustrating an electrical contact element used to test an electronic device, in accordance with a sixth embodiment of the present invention.
  • the electrical contact element used to test an electronic device is constructed in the same manner as the fourth embodiment, except that a pair of armrests 70 and 74 are respectively provided horizontally adjacent to the tip portion 26 and on a surface of the zigzagged part of the beam portion 64 which surface is vertically farthest from the tip portion 66 and on the electronic component 40 at a position corresponding to a bent part of the beam portion 64 which is horizontally adjacent to the tip portion 46 .
  • the pair of armrests 70 and 74 respectively provided on the beam portion 64 and the electronic component 60 are spaced apart from each other in consideration of a degree to which the beam portion 64 is bent.
  • insulating coating layers 72 and 76 made of polyimide, parylene, and so forth, are further applied to outer surfaces of the armrests 70 and 74 .
  • the tip portion 66 of the electrical contact element can be brought into contact with a semiconductor chip pad by constant physical force while having a desired OD characteristic, to apply a constant electric signal to the semiconductor chip and thereby confirm whether the semiconductor chip is in a normal state or not.
  • the beam portion 64 is bent by the physical force, whereby the tip portion 66 is brought into contact with the semiconductor chip pad, and the pair of armrests 70 and 74 provided on the surface of the beam portion 64 and the electronic component 60 are brought into contact with each other.
  • FIGS. 42 a through 42 i are cross-sectional views explaining a method for manufacturing the electrical contact element used to test an electronic device, shown in FIGS. 38 a and 38 b.
  • a first protective film of a predetermined thickness is formed on an entire surface of a sacrificial substrate 200 made of silicon.
  • the first protective film may comprise a thin film such as a photoresist, and the like.
  • a first protective film pattern 202 is formed in a manner such that the first protective film pattern 202 delimits a first opened region in which a tip portion is to be formed.
  • the first protective film pattern 202 comprising the photoresist and the like is formed by coating, exposing and developing the photoresist and the like on the sacrificial substrate 200 while rotating the sacrificial substrate 200 .
  • a trench 204 in which a tip portion is to be formed in subsequent processes is defined on the sacrificial substrate 200 .
  • the etching process for defining the trench 204 may comprise a wet etching process employing a chemical or a dry etching process employing a reaction gas.
  • a depth of the trench 204 is increased, whereby the trench 204 has a truncated polygonal pyramid-shaped or a truncated coned-shaped configuration with a side surface sloped.
  • a rounded tip portion 218 is formed.
  • a second protective film pattern 206 is formed in such a way as to delimit a second opened region in which a beam portion, zigzagged one or more times and having at least one bent part is to be formed and which is communicated with the trench 204 .
  • the second protective film pattern 206 may be formed by continuously implementing coating, exposing and developing a photoresist.
  • a conductive material 208 of a predetermined thickness is formed in the second opened region of the second protective film pattern 206 by implementing a CVD, PVD or plating process, in a manner such that the beam portion and the tip portion are formed. Thereafter, an upper surface of a resultant product is flattened.
  • a third protective film pattern 210 is formed on an entire surface of the sacrificial substrate 200 having undergone the flattening process, in such a way as to delimit a third opened region in which an armrest is to be formed in subsequent processes, at a position horizontally adjacent to the trench 204 in which the tip portion is to be formed.
  • the third protective film pattern 210 is formed to ensure that the armrest is formed on a bent part of the beam portion to be formed in the subsequent processes and zigzagged one or more times, which bent portion is horizontally adjacent to the tip portion.
  • a conductive material 211 of a predetermined thickness is formed in the third opened region of the third protective film pattern 210 by implementing a CVD, PVD or plating process. Thereafter, an upper surface of a resultant product is flattened.
  • an upper surface of the resultant product which is formed by the conductive material 211 can be flattened by CMP, etchback, grinding, etc.
  • a post portion 302 comprising a bump of a predetermined size, etc. is formed on a terminal of an electronic component 300 such as a PCB having realized thereon a predetermined circuit pattern.
  • An end of the beam portion 24 formed in the preceding processes on the sacrificial substrate 200 which end is farthest from the armrest 212 , is connected with the post portion 302 by connection means 304 such as soldering, brazing, plating, a conductive adhesive, etc.
  • FIGS. 43 a through 43 d are cross-sectional views explaining a method for manufacturing the electrical contact element used to test an electronic device, shown in FIGS. 39 a and 39 b.
  • a second protective film pattern 404 is formed in such a way as to delimit a second opened region in which a beam portion zigzagged one or more times and having at least one bent part is to be formed.
  • the second protective film pattern 404 is communicated with a trench 402 which is defined on a sacrificial substrate 400 by implementing an etching process using a first protective film pattern (not shown) and in which a tip portion is to be formed.
  • the trench 402 After the trench 402 is defined, by implementing one or more times anisotropic etching in the trench 402 , a depth of the trench 402 is increased, whereby the trench 402 has a truncated polygonal pyramid-shaped or a truncated cone-shaped configuration with a side surface sloped. Also, by rounding a bottom surface of the trench 402 and implementing one or more times anisotropic etching in the trench 402 , the tip portion 218 having a rounded distal end can be formed.
  • a conductive material 406 of a predetermined thickness is formed in the second opened region of the second protective film pattern 404 by implementing a CVD, PVD or plating process, in a manner such that the beam portion and the tip portion are formed. Thereafter, an upper surface of a resultant product is flattened.
  • the beam portion 408 having a zigzagged configuration which is zigzagged one or more times is formed.
  • the second protective film pattern 404 is removed by implementing wet etching, etc.
  • an armrest 504 of a predetermined size is formed on a terminal of an electronic component 500 such as a PCB having realized thereon a predetermined circuit pattern.
  • the armrest 504 is formed on the electronic component 500 at a position on a bent part of the beam portion 408 zigzagged one or more times which position horizontally adjoins the tip portion.
  • a post portion 502 comprising a bump of a predetermined size, etc. is formed on the terminal of the electronic component 500 .
  • An end of the beam portion 408 which is farthest from the trench 402 is connected with the post portion 502 by connection means 508 such as soldering, brazing, plating, a conductive adhesive, etc.
  • FIGS. 44 a through 44 d are cross-sectional views explaining a method for manufacturing the electrical contact element used to test an electronic device, shown in FIGS. 40 a and 40 b.
  • a second protective film pattern 604 is formed in such a way as to delimit a second opened region in which a beam portion zigzagged one or more times and having at least one bent part is to be formed.
  • the second protective film pattern 604 is communicated with a trench 602 which is defined on a sacrificial substrate 600 by implementing an etching process using a first protective film pattern (not shown) and in which a tip portion is to be formed.
  • the trench 602 After the trench 602 is defined, by implementing one or more times anisotropic etching in the trench 602 , a depth of the trench 602 is increased, whereby the trench 602 has a truncated polygonal pyramid-shaped or a truncated cone-shaped configuration with a side surface sloped. Also, by rounding a bottom surface of the trench 602 and implementing one or more times anisotropic etching in the trench 602 , the tip-portion 616 having a rounded distal end can be formed.
  • a conductive material 609 in the amount of a predetermined thickness is filled into the second opened region of the second protective film pattern 604 by implementing a CVD, PVD or plating process, in a manner such that the beam portion and the tip portion are formed. Thereafter, an upper surface of a resultant product is flattened.
  • a third protective film pattern 608 is formed on a resultant product including the sacrificial substrate 600 having undergone the flattening process, in such a way as to delimit a third opened region in which an armrest is to be formed.
  • the third protective film pattern 608 is formed to ensure that the, armrest is formed on a bent part of the beam portion to be formed in the subsequent processes and zigzagged one or more times, which bent portion is horizontally adjacent to the tip portion.
  • a conductive material 609 of a predetermined thickness is formed in the third opened region of the third protective film pattern 608 by implementing a CVD, PVD or plating process. Thereafter, an upper surface of a resultant product is flattened.
  • an armrest 702 of a predetermined size is formed on a terminal of an electronic component 700 such as a PCB having realized thereon a predetermined circuit pattern.
  • the armrest 702 is formed at a position corresponding to the armrest 610 formed on the beam portion 614 .
  • a post portion 706 comprising a bump of a predetermined size, etc. is formed on the terminal of the electronic component 700 .
  • An end of the beam portion 614 which is farthest from the trench 602 is connected with the post portion 706 by connection means 708 such as soldering, brazing, plating, a conductive adhesive, etc.
  • the armrest 702 is connected in a manner such that it faces the armrest 610 formed on the beam portion 614 while being spaced apart therefrom.
  • a distal end of a tip portion has a truncated polygonal pyramid-shaped or a truncated cone-shaped configuration with a rounded distal end surface or has a column-shaped configuration with a rounded distal end surface
  • the tip portion of the electrical contact element when the tip portion of the electrical contact element is repeatedly brought into contact with a pad of the semiconductor chip by constant physical force, the tip portion does not pierce an oxide film formed on the pad and damage the pad, and a defective proportion is not increased when implementing subsequent semiconductor manufacturing processes such as a wire bonding process, and the like.
  • the likelihood of the distal end of the electrical contact element to become worn and produce particles by itself is avoided.
  • a length of the tip portion of the electrical contact element is extended to 30 ⁇ m ⁇ 500 ⁇ m, adjustment of an OD characteristic can be easily conducted. Since a projection is formed around a proximal end of the tip portion where the tip portion and beam portion of the electrical contact element are connected with each other, while the tip portion of the electrical contact element is repeatedly brought into contact with the pad of the semiconductor chip by constant physical force, stress is not applied to the proximal end of the tip portion, and it is possible to prevent the tip portion from being broken.
  • the beam portion of the electrical contact element has a multitude of stepped portions, it is possible to properly conform to the recent trend toward a fine pitch required in an electronic device such as a highly integrated semiconductor chip. Also, because the beam portion of the electrical contact element has a zigzagged configuration, while the tip portion of the electrical contact element is repeatedly brought into contact with the pad of the semiconductor chip by constant physical force, it is possible to disperse stress applied to the beam portion and prevent the beam portion from being broken.
  • the electrical contact element according to the present invention can be mass-produced using a micro electro mechanical system (MEMS) with remarkable reproducibility, it is possible to improve yield, productivity and operational reliability of an electronic device testing kit such as a probe card which may comprise an electrical contact element.
  • MEMS micro electro mechanical system

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
US10/350,737 2002-02-05 2003-01-23 Method for manufacturing electrical contact element for testing electro device and electrical contact element thereby Abandoned US20040018752A1 (en)

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KR2002-6367 2002-02-05
KR1020020006367A KR100358513B1 (en) 2002-02-05 2002-02-05 Method of fabricating electrical contactor for testing electronic device and electrical contactor fabricated thereby
KR2002-68402 2002-11-06
KR10-2002-0068402A KR100475468B1 (ko) 2002-11-06 2002-11-06 전자소자 검사용 전기적 접촉체

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US11/352,658 Expired - Fee Related US7579855B2 (en) 2002-02-05 2006-02-13 Method for manufacturing electrical contact element for testing electronic device and electrical contact element manufactured thereby

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US (2) US20040018752A1 (de)
JP (1) JP2005517192A (de)
CN (1) CN100423221C (de)
AU (1) AU2002353582A1 (de)
DE (1) DE10297653T5 (de)
WO (1) WO2003067650A1 (de)

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WO2007142413A1 (en) * 2006-06-07 2007-12-13 Phicom Corporation Method of fabricating cantilever type probe and method of fabricating probe card using the same
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US20080079453A1 (en) * 2004-09-22 2008-04-03 Oug-Ki Lee Manufacture Method Of Vertical-Type Electric Contactor Vertical-Type Electric Contactor Thereof
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US20090072851A1 (en) * 2007-09-13 2009-03-19 Touchdown Technologies, Inc. Multi-Pivot Probe Card For Testing Semiconductor Devices
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US20100306669A1 (en) * 2005-11-30 2010-12-02 Roberto Della Pasqua S.R.L. Instant messaging service with minimized user interface
US20110236805A1 (en) * 2010-03-29 2011-09-29 Pixart Imaging Company MEMS lithography mask with improved tungsten deposition topography and method for the same
CN102219177A (zh) * 2010-04-14 2011-10-19 原相科技股份有限公司 改善钨沉积拓朴形貌的微机电系统光罩与方法
US20130234748A1 (en) * 2012-03-07 2013-09-12 Advantest Corporation Transferring electronic probe assemblies to space transformers
CN110277437A (zh) * 2018-03-16 2019-09-24 张峻玮 一种外包覆式高效能低漏电流的肖基二极管结构及其制造方法

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JP4916893B2 (ja) * 2007-01-05 2012-04-18 株式会社日本マイクロニクス プローブの製造方法
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US20090142707A1 (en) * 2004-08-19 2009-06-04 Formfactor, Inc. Method to build a wirebond probe card in a many at a time fashion
US7884006B2 (en) * 2004-08-19 2011-02-08 Formfactor, Inc. Method to build a wirebond probe card in a many at a time fashion
US20080079453A1 (en) * 2004-09-22 2008-04-03 Oug-Ki Lee Manufacture Method Of Vertical-Type Electric Contactor Vertical-Type Electric Contactor Thereof
KR101161551B1 (ko) * 2005-08-01 2012-07-03 어드밴티스트 아메리카, 인크. 비틀림 스프링 탐침 접속자 구조
WO2007015713A1 (en) * 2005-08-01 2007-02-08 Touchdown Technologies, Inc. Torsion spring probe contactor design
US20080252328A1 (en) * 2005-08-01 2008-10-16 Touchdown Technologies, Inc. Probe for testing semiconductor devices
US7772859B2 (en) 2005-08-01 2010-08-10 Touchdown Technologies, Inc. Probe for testing semiconductor devices with features that increase stress tolerance
US20100306669A1 (en) * 2005-11-30 2010-12-02 Roberto Della Pasqua S.R.L. Instant messaging service with minimized user interface
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WO2007142413A1 (en) * 2006-06-07 2007-12-13 Phicom Corporation Method of fabricating cantilever type probe and method of fabricating probe card using the same
US20080011476A1 (en) * 2006-07-11 2008-01-17 Halliburton Energy Services, Inc. Methods for coating particulates with tackifying compounds
WO2008127801A3 (en) * 2007-04-12 2008-12-11 Touchdown Technologies Inc Probe for testing semiconductor devices
WO2008127801A2 (en) * 2007-04-12 2008-10-23 Touchdown Technologies, Inc. Probe for testing semiconductor devices
US20090072851A1 (en) * 2007-09-13 2009-03-19 Touchdown Technologies, Inc. Multi-Pivot Probe Card For Testing Semiconductor Devices
US20110236805A1 (en) * 2010-03-29 2011-09-29 Pixart Imaging Company MEMS lithography mask with improved tungsten deposition topography and method for the same
US8372563B2 (en) * 2010-03-29 2013-02-12 Pixart Imaging Inc. MEMS lithography mask with improved tungsten deposition topography and method for the same
CN102219177A (zh) * 2010-04-14 2011-10-19 原相科技股份有限公司 改善钨沉积拓朴形貌的微机电系统光罩与方法
US20130234748A1 (en) * 2012-03-07 2013-09-12 Advantest Corporation Transferring electronic probe assemblies to space transformers
US10859602B2 (en) * 2012-03-07 2020-12-08 Advantest Corporation Transferring electronic probe assemblies to space transformers
CN110277437A (zh) * 2018-03-16 2019-09-24 张峻玮 一种外包覆式高效能低漏电流的肖基二极管结构及其制造方法

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US20060192581A1 (en) 2006-08-31
DE10297653T5 (de) 2005-04-14
US7579855B2 (en) 2009-08-25
WO2003067650A1 (en) 2003-08-14
CN100423221C (zh) 2008-10-01
AU2002353582A1 (en) 2003-09-02
JP2005517192A (ja) 2005-06-09
CN1618124A (zh) 2005-05-18

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