US20020131912A1 - Method and apparatus for treating perfluorocompounds - Google Patents

Method and apparatus for treating perfluorocompounds Download PDF

Info

Publication number
US20020131912A1
US20020131912A1 US09/940,984 US94098401A US2002131912A1 US 20020131912 A1 US20020131912 A1 US 20020131912A1 US 94098401 A US94098401 A US 94098401A US 2002131912 A1 US2002131912 A1 US 2002131912A1
Authority
US
United States
Prior art keywords
gas
discharged
perfluorocompounds
discharged gas
ejector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US09/940,984
Other languages
English (en)
Inventor
Shin Tamata
Ri Koukun
Kazuyoshi Irie
Yoshiki Shibano
Shuichi Kanno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Assigned to HITACHI, LTD. reassignment HITACHI, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KANNO, SHUICHI, SHIBANO, YOSHIKI, KOUKUN, RI, TAMATA, SHIN
Priority to US10/090,817 priority Critical patent/US7128882B2/en
Publication of US20020131912A1 publication Critical patent/US20020131912A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/46—Removing components of defined structure
    • B01D53/68—Halogens or halogen compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/46—Removing components of defined structure
    • B01D53/68—Halogens or halogen compounds
    • B01D53/70—Organic halogen compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
    • B01D53/86—Catalytic processes
    • B01D53/8659—Removing halogens or halogen compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
    • B01D53/86—Catalytic processes
    • B01D53/8659—Removing halogens or halogen compounds
    • B01D53/8662—Organic halogen compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a method and an apparatus for treating perfluorocompunds, particularly to a method and an apparatus for treating perfluorocompounds, suitable for decomposition of perfluorocompounds discharged from a semiconductor production palnt.
  • Perfluorocompounds is a general term for compounds of carbon and fluorine; carbon, hydrogen and fluorine; sulfur and fluorine; and nitrogen and fluorine, such as CF 4 , CHF 3 , C 2 F 6 , CH 2 F 2 , C 3 F 8 , C 5 F 8 , SF 6 , NF 3 , etc. which are all free from chlorine.
  • Perfluorocompounds (which will be hereinafter referred to as “PFC”) are in a gaseous state and are used as an etching gas and a cleaning gas in the semiconductor production method. PFC has a long life (e.g.
  • a higher reliability is required for apparatuses relating to the semiconductor production in a semiconductor production plant from the viewpoint of continuous operation of apparatuses for producing semiconductors.
  • a higher reliability is also required for an apparatus for treating PFC contained in the discharged gas from etching apparatuses, because, if it is out of order, operation of several etching apparatuses connected thereto must be shut down.
  • An object of the present invention is to provide a method and an apparatus for treating perfluorocompounds, capable of reducing the frequency of apparatus maintenance inspection.
  • the object of the present invention can be attained by sucking a discharged gas containing acid gases generated by decomposition of perfluorocompounds by a jet stream of an injected gas, thereby ejecting the discharged gas. Since the discharged gas is sucked and ejected by a jet stream gas of an injected gas, the gas suction apparatus for use in the present invention has no driving parts, and thus the frequency of apparatus maintenance inspection can be considerably reduced, resulting in remarkable reduction in the frequency of maintenance inspection of an apparatus for treating perfluorocompounds and an increase in the continuous operating rate of the apparatus for treating perfluorocompounds.
  • the reduction in the frequency of maintenance inspection of the apparatus for treating perfluorocompounds means an increase in the continuous operating rate of the semiconductor producing apparatus, resulting in a considerable increase in the semiconductor production efficiency. It is desirable to use an ejector as a gas suction apparatus.
  • the discharged gas containing acid gases generated by decomposition of perfluorocompounds is preferably brought into contact with one of water and an aqueous alkaline solution, the acid gases can be simply removed from the discharged gas. Furthermore, since mists generated by contact with one of water and an aqueous alkaline solution can be separated from the discharged gas, corrosion of downstream machinery and apparatuses, and pipings (or ducts) in contact with the discharged gas can be remarkably reduced.
  • a tank for receiving one of the water and the aqueous alkaline solution discharged from the acid gas removing apparatus below the acid gas removing apparatus and a mist separator It is preferable to provide a tank for receiving one of the water and the aqueous alkaline solution discharged from the acid gas removing apparatus below the acid gas removing apparatus and a mist separator.
  • the water or the aqueous alkaline solution discharged from the acid gas removing apparatus can be collected into the tank simply by gravity.
  • the mists separated in the mist separator can be discharged into the tank simply by gravity through a discharge piping. No power is required for collecting the water or the aqueous alkaline solution and the separated mists, so the structure of the apparatus for treating perfluorocompounds can be simplified.
  • a catalyst contains an Al oxide and further contains at least one of oxides of metals selected from Zn, Ni, Ti, F, Sn, Co, Zr, Ce, Si and Pt.
  • the perfluorocompounds can be efficiently decomposed at low temperatures of 200°-800° C. It is particularly preferable to use the catalyst in the form of Al-containing composite oxide such as NiAl 2 O 4 and ZnAl 2 O 4 .
  • FIG. 1 is a structural diagram of an apparatus for treating perfluorocompounds according to one preferable embodiment of the present invention.
  • FIG. 2 is a structural diagram of a semiconductor production plant in which the present apparatus for treating perfluorocompounds is incorporated.
  • FIG. 3 is a vertical cross-sectional view of a cyclone shown in FIG. 1.
  • FIG. 4 is a cross-sectional view along the line IV-IV of FIG. 3.
  • FIG. 5 is a vertical cross-sectional view of ejector shown in FIG. 1.
  • FIG. 6 is an enlarged cross-sectional view of zone VI of FIG. 5.
  • FIG. 7 is a vertical cross-sectional view of discharged water tank shown in FIG. 1.
  • FIG. 8 is a diagram showing evacuating characteristics of ejector of FIG. 5.
  • FIG. 9 is a structural diagram of an apparatus for treating perfluorocompounds according to another preferable embodiment of the present invention.
  • FIG. 10 is a structural diagram of another example of a semiconductor production plant in which the present apparatus for treating perfluorocompounds is incorporated.
  • [0020] 1 apparatus for treating perfluorocompounds; 2 : reactor; 3 : catalyst cartridge; 4 : heater; 6 : cooling chamber; 7 , 11 and 15 : sprays; 8 : inlet packed column; 10 : spray column; 12 : discharged water tank; 13 : discharged gas washing column; 16 : cyclone; 19 : lower compartment; 20 : upper compartment; 24 : ejector; 25 : ejector body; 27 : injection nozzle; 28 : nozzle member; 29 : injection member; 30 : injection orifice; 34 : ejection nozzle, 35 : ejection passage; 46 : discharged water piping; 50 , 51 and 52 : water feed pipes; 56 : air feed pipe; 62 : liquid level; 63 : pressure control value; 67 and 70 : etching apparatuses; 73 A, 73 B, 73 C and 73 D: vacuum pumps; 81 : compressed air feeder; 82 : pretreating apparatus.
  • blowers for transferring the discharged gas from the treatment are highly corroded by acid gases remaining in the discharged gas (the acids gases are generated by decomposition of PFC), which plays an important role in the improvement of continuous operating rate of the apparatus for treating perfluorocompounds (which may be hereinafter referred to as “PFC treating apparatus”).
  • PFC treating apparatus A result of studies made on the corrosion of blowers by the present inventors will be described below:
  • decomposition gases generate. That is, decomposition of CF 4 results in generation of CO 2 and HF, decomposition of SF 6 results in generation of SO 3 and HF, and decomposition of NF 3 results in generation of NO x (NO and NO 2 ) and HF.
  • decomposition of PFC results in formation of various acid gases (HF, SO 3 and NO x ).
  • Acid gases (SO 3 , HF, NO and NO 2 ) as decomposition gases of PFC can be absorbed into water (or an aqueous alkaline solution) in a discharged gas washing column and removed from the discharged gas thereby.
  • the present inventors have found that besides a small amount of acid gases, acid gas mists are discharged from the discharged gas washing column together with the discharged gas.
  • the present inventors have found, for the first time, that not only leading to the blower of the acid gas mists not removed in the discharged gas washing column and discharged therefrom, but also the acid gas mists corrodes the blower. It is difficult to completely remove the acid gas mists in the mist separator. Blower corrosion has an adverse effect on the semiconductor production, while increasing, the frequency of maintenance inspection such as inspection, cleaning, part replacement, etc. upon shutting down the blower.
  • the present inventors have reached a conclusion that a gas ejecting apparatus with no driving part must be used in place of the blower, and have decided to use a gas ejecting apparatus capable of sucking the discharged gas by a jet stream of an injected gas (e.g. ejector).
  • the semiconductor production plant comprises a semiconductor production apparatus and a discharged gas treating apparatus for treating a discharged gas from the semiconductor production apparatus.
  • the semiconductor production apparatus is provided with, for example, etching apparatus 67 with etching chambers 68 and 69 and etching apparatus 70 with etching chambers 71 and 72 .
  • As the discharged gas treating apparatus PFC treating apparatus 1 for treating PFC-containing discharged gas from etching chambers 68 , 69 , 71 and 72 is used.
  • Gas discharge pipes 74 A, 74 B, 74 C and 74 D connected to etching chambers 68 , 69 , 71 and 72 , respectively, are put into one piping 40 .
  • PFC treating apparatus 1 is connected to piping 40 on one hand, and to discharged gas duct 75 through piping 49 on the other hand.
  • Vacuum pumps 73 A, 73 B, 73 C and 73 D are provided in gas discharge pipes 74 A, 74 B, 74 C and 74 D, respectively.
  • PFC gas as an etching gas is fed to etching chambers 68 , 69 , 71 and 72 ; each in a vacuum state, respectively.
  • the PFC gas is brought into a plasma state to conduct etching treatments of wafers as semiconductor materials, respectively.
  • a portion (10-30%) of the PFC gas fed each to etching chambers 68 , 69 , 71 and 72 is consumed by the etching treatments in the etching chambers.
  • discharged gases from etching chambers 68 , 69 , 71 and 72 are passed through gas discharge pipes 74 A, 74 B, 74 C and 74 D, respectively, joined into piping 40 and fed to PFC treating apparatus 1 .
  • the discharged gas contains PFC gas not consumed in etching chambers 68 , 69 , 71 and 72 .
  • the discharged gas contains HF secondarily generated from the PFC gas in the etching chambers, SiF 4 , etc. generated by etching the wafers. To protect the bearings, etc.
  • a N 2 gas is fed to the bearings of the vacuum pumps. That is, the PFC concentration of the discharged gas led to PFC treating apparatus 1 is approximately 0.5%.
  • the PFC gas is decomposed in PFC treating apparatus 1 .
  • the discharged gas from PFC treating apparatus 1 is discharged to discharged gas duct 75 through piping 49 .
  • the PFC concentration of discharged gas to PFC treating apparatus 1 and that of discharged gas from PFC treating apparatus 1 are measured.
  • the PFC concentration of discharged gas from PFC treating apparatus 1 is monitored, and when the concentration exceeds a set concentration, an alarm is given. Still furthermore, soundness of catalytic reaction or timing of catalyst exchange due to catalyst degradation is checked from a decomposition ratio calculated from PFC concentrations between the inlet and the outlet of PFC treating apparatus 1 .
  • PFC treating apparatus 1 of this embodiment comprises a silicon removing apparatus, reactor 2 , coding chamber 6 , discharged water tank 12 , discharged gas washing column 13 , cyclone 16 and ejector 24 .
  • the silicon removing apparatus comprises inlet packed column 8 and spray column 10 .
  • Inlet packed column 8 has packed bed 9 packed with packings such as Raschig rings within it.
  • Spray column 10 has spray 11 within it.
  • Piping 40 is connected to the space below packed bed 9 in inlet packed column 8 .
  • Space above packed bed 9 in inlet packed column 8 is connected to spray column 10 through piping 41 .
  • Reactor 2 has catalyst cartridge 3 and heating space 5 within it.
  • Catalyst cartridge 3 has a catalyst bed packed with a catalyst within it.
  • Catalyst for use in the catalyst bed is an alumina-based catalyst containg 80% Al 2 O 3 as an Al oxide and 20% NiO as a Ni oxide.
  • Heating space 5 is provided upstream of catalyst cartridge 3 .
  • Heater 4 is provided on the outside of reactor 2 so as to surround heating space 5 .
  • Cooling chamber 6 connected to reactor 2 has spray 7 within it and is positioned below catalyst cartridge 3 .
  • Piping 42 connects spray column 10 to heating space 5 .
  • Piping 43 for feeding water (or steam) and piping 44 for feeding air are each connected to heating space 5 .
  • Discharged gas washing column 13 as an acid gas removing apparatus has spray 15 at the upper position within it and packed bed 14 packed with plastic Raschig rings below spray 15 .
  • Discharged water tank 12 connected to discharged gas washing column 13 is provided below discharged gas washing column 13 .
  • Discharged water tank 12 is connected to cooling chamber 6 through piping 45 .
  • Piping 57 connected to space below packed bed 9 in inlet packed column 8 is inserted into discharged water tank 12 from the top side, as shown in FIG. 7.
  • Piping 57 positioned in discharged water tank 12 has float seat 58 for establishing a water seal structure, float 59 and float stopper 60 .
  • Annular float seat 58 is provided at the lower end of the inside wall of piping 57 .
  • Float stopper 60 of coarse wire net is provided at a position above float seat 58 and within piping 57 .
  • float 59 is provided between float seat 58 and float stopper 60 .
  • Discharged water pipe 46 with discharged water pump 80 is connected to the bottom of discharged water tank 12 .
  • Piping 66 is connected to discharged water pipe 46 at a position downstream of discharged water pump 80 and is further connected to space above packed bed 9 in inlet packed column 8 .
  • Piping 57 connected to the bottom of inlet packed column 8 i.e. below packed bed 9 in inlet packed column 9 , is inserted into discharged water tank 12 .
  • Cyclone 16 has lower compartment 19 and upper compartment 20 , both being partitioned by partition wall 17 , within it.
  • Discharged gas feed member 38 is extended in the tangential direction to the inside wall of lower compartment 19 .
  • Flow passage 39 in discharged gas feed member 38 is tapered toward lower compartment 19 .
  • Piping 47 connected to the top of discharged gas washing column 13 is connected to discharged gas feed member 38 .
  • Passage 18 penetrated through partition wall 17 connects lower compartment 19 to upper compartment 20 .
  • Drain outlet 23 formed at the bottom of lower compartment 19 is connected to drain piping 53 , which is connected to discharge water tank 12 .
  • Drain outlet 22 formed in upper compartment 20 is connected to discharged water tank 12 through drain piping 54 .
  • a filter, an electrostatic precipitator and an activated carbon adsorption column can be used as a mist separator besides the cyclone.
  • ejector 24 comprises ejector body 25 , injection nozzle 27 and ejection nozzle 34 .
  • Ejector body 25 has internal space 26 within it.
  • Injection nozzle 27 has nozzle member 28 .
  • injection member 29 is screwed into the tip end part of nozzle member 28 .
  • Injection orifice 30 is formed in injection member 29 .
  • Injection member 29 is made of highly corrosion-resistant and highly durable metal or ceramic.
  • Ejection nozzle 34 has ejection passage 35 within it.
  • Injection nozzle 27 is provided against one end of ejector body 25 through packing 76 .
  • Ejection passage 35 has throat region 77 with a minimum passage cross-sectional area within it. Ejection passage 35 is increased in the passage cross-sectional area from throat region 77 toward the inlet and also from throat region 77 toward ejector outlet 78 . Degree of the latter increase in the passage cross-sectional area is smaller than degree of the former increase.
  • Pressing plate 32 with flow inlet 33 is counterposed to injection nozzle 27 through packing 36 . Pressing plate 32 , injection nozzle 27 , ejector body 25 and ejection nozzle 34 are arranged in this order and secured by bolts 79 A and nuts 79 B.
  • Other members than pressing plate 32 and injection member 29 of injection nozzle 27 e.g. ejector body 25 and ejection nozzle 34 , are made of highly corrosion-resistant plastic, for example vinyl chloride resin (or fluororesin, etc.).
  • Piping 48 provided on ejector body 25 is connected to discharge outlet 21 formed at the top of upper compartment 20 of cyclone 16 . Piping 48 is also connected to internal space in ejector body 25 . Piping 49 , connected to discharged gas duct 75 is connected to ejector outlet 78 of ejection nozzle 34 . Condensate drain piping 55 connected to piping 49 is connected to discharged water tank 12 . Water feed pipe 50 is connected to spray 15 . Water feed pipe 51 is connected to spray 11 . Water feed pipe 52 is connected to spray 7 . Water feed pipes 51 and 52 are connected to water feed pipe 50 .
  • Compressed air feeder 81 is fixed to pressing plate 32 .
  • compressed air feeder 81 comprises air feed pipe 56 , pressure central valve 63 and air feed valve 64 .
  • Air feed pipe 56 is connected to pressing plate 32 and communicated with flow inlet 33 .
  • Pressure control valve 63 is provided in air feed pipe 56
  • air feed valve 64 is provided in air feed pipe 56 at a position upstream of pressure control valve 63 .
  • Air feed pipe 56 is connected to a compressor, though not shown in the drawings.
  • Numeral 65 is a pressure switch for safety interlock.
  • PFC contained in the discharged gas to be fed to PFC treating apparatus depends on kinds of semiconductors produced in semiconductor production apparatuses or semiconductor makers. Production of wafers as a based material for semiconductors involves cases of using a single PFC and a plurality of PFCs. In this embodiment, the case of using SF 6 and C 2 F 6 as PFC in the semiconductor production is explained.
  • SiF 4 contained in the discharged gas undergoes reaction of the following reaction equation (4) through contact with water (discharged water and water sprayed in spray column 10 ) in inlet packed column 8 and is decomposed to SiO 2 and HF:
  • HF contained in the discharged gas fed to inlet packed column 8 and HF formed by reaction of the reaction equation (4) are absorbed into water in inlet packed column 8 and removed from the discharged gas.
  • SiO 2 as a solid is also washed away by the washing water.
  • Packed bed 9 acts to increase a contact efficiency between the ascending discharged gas and the descending washing water and increase a reaction efficiency of the reaction equation (4) and an absorption efficiency of HF into water.
  • Water containing SiO 2 and absorbed HF is led to discharged water tank 12 below inlet packed column 8 through piping 57 .
  • Other impurities contained in the discharged gas are also removed by water in inlet packed column 8 and spray column 10 .
  • HF not absorbed into water in inlet packed column 8 is led to spray column 10 together with the discharged gas and absorbed into sprayed water there.
  • SiF4 remaining in the discharged gas led to spray column 10 from inlet packed column 8 undergoes reaction of the reaction equation (4) through contact with the sprayed water in spray column 10 .
  • HF generated from the reaction is absorbed into the sprayed water.
  • Generated SiO 2 is also washed away by the sprayed water and discharged into inlet packed column 8 and piping 57 .
  • the discharged gas containing SF 6 and C 2 F 6 discharged into piping 42 from spray column 10 is fed to heated space 5 of reactor 2 at a flow rate of 60 l/min.
  • the discharged gas contains neither HF nor SiF 4 nor SiO 2 formed by the reaction of the reaction equation (1).
  • Water (or steam) is fed through piping 43 to heated space 5 , and air is fed thereto through piping 44 .
  • Decomposition reaction of PFC by a catalytic action is hydrolysis, and thus the necessary water (or steam) for the reaction is fed thereto.
  • the discharged gas is heated, together with the water and the air, to the temperature of 750° C., at which decomposition of SF 6 and C 2 F 6 by the catalytic action starts, by heater 4 .
  • Depending on the kinds of PFC heating temperature is about 650° to about 750° C. Water turns to steam.
  • the discharged gas containing steam, air, SF 6 and C 2 F 6 heated to 750° C. is fed to
  • reaction of the above-mentioned reaction equation (2) and reaction of the following reaction equation (5) of SF 6 and C 2 F 6 with H 2 O are promoted by the action of alumuna-based catalyst in catalyst cartridge 3 to decompose SF 6 to SO 3 and HF and C 2 F 6 to CO 2 and HF.
  • reaction equations (2) and (5) take place in the presence of steam.
  • SF 6 and C 2 F 6 are 100% decomposed.
  • harmful CO is formed by reaction of C 2 F 6 with H 2 O.
  • the oxygen contained in the air converts CO to harmless CO 2 , and thus no CO is generated as shown by the reaction equation 5.
  • Oxygen may be fed thereto in place of air.
  • Catalyst surface area is reduced by ⁇ circle over (1) ⁇ and ⁇ circle over (2) ⁇ , lowering the PFC decomposition reaction rate.
  • Discharged gas flow through clearances between the catalysts is deteriorated due to ⁇ circle over (2) ⁇ , inhibiting the catalyst and the discharged gas from their contact, resulting in lowering of PFC decomposition reaction rate.
  • SiO 2 is removed in advance in the silicon removing apparatus, and thus the PFC decomposition efficiency can be improved without said problems.
  • Discharged gas containing SO 3 , CO 2 and HF as decomposition gases of SF 6 and C 2 F 6 is fed to cooling chamber 6 from catalysts cartridge 3 .
  • Water fed through water feed pipe 52 is sprayed from spray 7 into cooling chamber 6 .
  • the discharged gas is cooled through contact with the sprayed water, so the discharge gas temperature is lowered to 100° C.
  • a portion of HF contained in the discharged gas is absorbed into the sprayed water.
  • the sprayed water and the discharged gas are led to the space above liquid level 61 in discharged water tank 12 from cooling chamber 6 through piping 45 (see FIG. 7).
  • Discharged water is stored in discharged water tank 12 temporarily.
  • the water in discharged water tank 12 is discharged into discharged water pipe 46 to a discharged water treatment plant (not shown in the drawing) near the PFC treating apparatus.
  • Such a discharged gas containing decomposition gases is led to discharged gas washing column 13 from discharged water tank 12 .
  • Water fed through water feed pipe 50 is sprayed by spray 15 .
  • the sprayed water descends through packed bed 14 to fall into discharged water tank 12 .
  • the discharged gas ascends through packed bed 14 .
  • SO 3 and HF as acid gases contained in the discharged gas are absorbed into the sprayed water and separated from the discharged gas.
  • SO 3 mists SO 3 mists
  • An aqueous alkaline solution (aqueous NaOH solution or aqueous KOH solution) may be sprayed by spray 15 in place of water.
  • the discharged gas is fed to lower compartment 19 of cyclone 16 through flow passage 39 and descends while whirling around passage 18 .
  • Acid gas mists contained in the discharged gas are separated from the discharged gas by whirling of the discharged gas and blown off outwardly to attach to the side walls of lower compartment 19 .
  • the attached mists flow down along the side walls toward the bottom of lower compartment 19 .
  • the separated acid gas mists are discharged into discharged water tank 12 from drain outlet 23 through drain piping 53 .
  • the whirling stream of the discharged gas in lower compartment 19 ascends through passage 18 , while whirling, and reaches upper compartment 20 .
  • the acid gas mists entrained in the discharged gas are separated from the discharged gas and flow downward along the side walls of upper compartment 20 .
  • the separated acid mists are discharged into discharged water tank 12 through drain outlet 22 and drain piping 54 .
  • Compressed air which is compressed by a compressor (not shown in the drawings), is fed to ejector 24 through air feed pipe 56 by opening air feed valve 64 .
  • the compressed air is a driving gas for ejector 24 .
  • Pressure of compressed air is controlled to a set pressure by adjusting the opening degree of pressure control valve 63 .
  • Compressed air is fed to ejector 24 at substantially the same flow rate as that of the discharged gas to be fed to reactor 2 , i.e. about 60-about 80 l/min and at a pressure of about 0.1 Mpa.
  • N2 gas or He gas may be used as a driving gas in place of the compressed air.
  • the compressed air is fed to flow passage 31 of nozzle member 28 from flow inlet 33 and injected from injection orifice 30 toward ejection passage 35 of ejection nozzle 34 at a sonic or supersonic speed.
  • the injection stream of compressed air from injection orifice 30 generates a negative pressure in throat region 77 or its neighborhood of ejection passage 35 .
  • the discharged gas in piping 48 is sucked into ejection passage 35 through internal space 26 and discharged into piping 49 .
  • the discharged gas is led to discharged gas duct 75 through piping 49 (FIG. 2).
  • Condensate contained in the discharged gas from ejector 24 is led to discharged water tank 12 through condenate drain piping 55 .
  • cooling chamber 6 , discharged water tank 12 and discharged gas washing column 13 are kept in a negative pressure state to prevent SO 3 , HF, etc. contained in the discharged gas from leakage to the outside.
  • the conventional ejector has been used to generate a high vacuum state.
  • the conventional ejector cannot have no such higher suction gas rate than that of blowers and thus fails to serve as a substitute for blowers.
  • ejector suction power largely depends on pressure of driving compressed air and is abruptly lowered with increasing ejection flow rate of the gas to be sucked, as shown in FIG. 8 by the dotted line. It is impossible to use an ejector generally used for generating a vacuum state (generation of suction power) as a substitute for a blower because of too large differences in the characteristics therebetween.
  • ejector 24 used in this embodiment has such ejection characteristics as shown in FIG. 8 by the full line. Even if the ejection flow rate of the discharged gas from ejector 24 is increased, degree of lowering of the suction power of ejector 24 can be kept small.
  • Ejector 24 has been developed by the present inventors. Ejector 24 has substantially equivalent ejection characteristics to those of the blower (as shown in FIG. 8 by the dash-and-dot line). Even if the pressure of driving compressed air to be fed to ejector 24 is changed to e.g. 0.1 Mpa and 0.12 Mpa, respectively, the degree of lowering of the suction power is substantially not changed against the increasing ejection flow rate of discharged gas. Thus, ejector 24 can have a large ejection flow rate of discharged gas.
  • Discharged gas led to ejector 24 contains a small amount of acid gas mists, but ejector 24 made of a highly corrosion-resistant plastic has no fear of corrosion, even if it is brought into contact with the acid gas mists.
  • any corrosion due to decomposition gas does not take place in ejector 24 as a decomposition gas-containing discharged gas ejecting apparatus, and thus maintenance working such as inspection, part replacement, etc. of the discharged gas ejecting apparatus (apparatus for injecting a gas to such another gas) is substantially not required. That is, a frequency of maintenance inspection is considerably lower than in the case of using a blower, and continuous operation rate of PFC treating apparatus 1 is considerably improved.
  • injection member 29 with injection orifice 30 for ejecting the discharged gas at a sonic or supersonic speed is made of a highly corrosion-resistant, highly durable ceramic, wearing due to sonic speed-discharged gas is considerably less, contributing to lowering of a frequency of maintenance inspection of ejector 24 .
  • ejector 24 can perform continuous long-term operation fully.
  • cyclone 16 as a mist separating apparatus can reduce the amount of acid gas mists to discharged gas duct 75 through ejector 24 .
  • the amount of mists condensed in discharged gas duct 75 can be reduced, considerably reducing corrosion of discharged gas duct 75 .
  • Reduction in the amount of mists results in further prolongation of the life of ejector 24 .
  • Discharged water tank 12 is at the lowest position and thus the water discharged from inlet packed column 8 and spray column 10 , sprayed water from cooling chamber 6 and discharged gas washing column 13 and drain water separated in cyclone 16 flow into discharged water tank 12 by gravity. Thus, pumps for transferring these kinds of water to discharged water tank 12 are not required, thereby making the structure of PFC treating apparatus 1 more compact.
  • PFC treating apparatus 1 of this embodiment can decompose any other PFC than SF 6 and C 2 F 6 .
  • SF 6 decomposition treatment test was carried out in PFC treating apparatus 1 shown in FIG. 1, using a simulation gas containing SF 6 .
  • Simulation gas was prepared by diluting SF 6 with a nitrogen gas to contain 0.5% SF 6 .
  • the simulation gas was fed to reactor 2 of PFC treating apparatus 1 at a flow rate of 60 l/min. Air and water were also fed to reactor 2 at 15 l/min. and 20 ml/min, respectively.
  • the simulation gas containing water and air was heated to 750° C. by an electric heater in heating space 5 .
  • the simulation gas was fed to catalyst cartridge 3 and decomposed.
  • Catalyst packed in catalyst cartridge 3 was a NiO and Al 2 O 3 -containing catalyst.
  • SF 6 was treated at a space velocity of simulation gas to catalyst of 1,000/h.
  • Gas containing SF 6 decomposition gas, discharged from reactor 2 was cooled in cooling chamber 6 and then led to cyclone 16 at a flow velocity of about 20 m/s through discharged gas washing column 14 .
  • Acid gas mists separated and removed by cyclone 16 was discharged into discharged water tank 12 from the bottom of cyclone 16 through drain piping 53 .
  • Gas discharged from cyclone 16 was sucked by ejector 24 driven by compressed air at 0.1 Mpa. Flow rate of compressed air to ejector 24 was about 70 l/min.
  • SO 3 concentration of the gas at a position upstream of cyclone 16 (in piping 47 ) and at a position downstream thereof (in piping 48 ) was measured to determine a mist removal efficiency of cyclone 16 . Since SO 3 mists are formed by absorption of water molecules around SO 3 as nuclei, a mist removal efficiency of cyclone 16 can be calculated by a ratio of SO 3 concentration in piping 48 to that in piping 47 .
  • SO 3 concentration was calculated by subtracting a gas chromatographically measured SO 2 concentration from a SOx concentration measured by a liquid trapping method. As a result, SO 3 concentration was 1,400 ppm at the position upstream of cyclone 16 , whereas it was 280 ppm after cyclone 16 . That is, 80% of the mists was removed by cyclone 16 .
  • Mist particle size distribution was measured at the outlet of cyclone 16 . Mists contained in the gas discharged from cyclone 16 had particle sizes substantially smaller than 1 ⁇ m. Mists having particle sizes of 1 ⁇ m or more were removed by cyclone 16 . After the treating operation for a predetermined time, ejector 24 was dismantled and it was found by inspection that no corrosion took place at the interior of ejector 24 and no condensate was observed in piping 49 at the outlet side of ejector 24 .
  • a NF 3 -containing simulation gas was used to conduct the same test as in the case of using the SF 6 -containing simulation gas.
  • Nitric acid mists were smaller in particle sizes than sulfuric acid mists, and accordingly the removal efficiency of the mist removing apparatus was as low as 20-30%, but no corrosion, etc. were found to take place in the ejector as in the test with the SF 6 -containing simulation gas.
  • PFC treating apparatus 1 A as another embodiment of the present invention will be described below, referring to FIG. 9, where the same members as in embodiment of FIG. 1 are identified by the same reference numerals.
  • PFC treating apparatus 1 A is different from PFC treating apparatus 1 only in omission of cyclone 16 of FIG. 1. Accordingly, piping 47 connects the top of discharged gas washing column 13 directly to internal space 26 of ejector 24 . In this embodiment, the discharged gas in discharged gas washing column 13 is sucked into piping 47 by the suction by ejector 24 and discharged into piping 49 .
  • the structure is more simplified than PFC treating apparatus 1 due to the omission of cyclone 16 .
  • This embodiment is preferably applied to the case that the concentration of PFC to PFC treating apparatus 1 A is low and the amount of acid gas mists entrained in the discharged gas from discharged gas washing column 13 is small.
  • discharged gas washing column 13 may be omitted in the embodiment of FIG. 1, where piping 47 connected to cyclone 16 is connected directly to the space above liquid level 61 in discharged water tank 12 .
  • wafers with metallic wirings are etched in some case.
  • wafers with metallic wirings are etched in etching chambers 68 and 69 of etching apparatus 67 .
  • a large amount of attachable by-products originating from the metallic wirings are generated by the etching.
  • Residual PFC containing the by-products, HF and SiF 6 are discharged from etching chambers 68 and 69 and fed, together with N 2 gas fed to vacuum pumps 73 A and 73 B, to pretreating apparatus 82 packed with activated carbon.
  • the attachable by-products are removed by pretreating apparatus 82 .
  • the discharged gas from pretreating apparatus 82 is led to PFC treating apparatus 1 through piping 40 .
  • a chlorine gas, a hydrogen chloride gas or a hydrogen bromide (HBr) gas is used as etching gas besides the PFC gas, where the chlorine gas, the hydrogen chloride gas or the hydrogen bromide gas is mixed with the PFC gas and fed to the etching chambers.
  • the chlorine gas, the hydrogen chloride gas or the hydrogen bromide gas is fed to the etching chambers after the etching by the PFC gas has been finished.
  • etching treatment by the chlorine gas, the hydrogen chloride gas or the hydrogen bromide gas is carried out before the etching treatment by the PFC gas, where feeding of the chlorine gas, the hydrogen chloride gas or the hydrogen bromide gas to the etching chambers is carried out before the feeding of the PFC gas.
  • the chlorine gas, the hydrogen chloride gas and the hydrogen bromide gas are the same acid gases as HF.
  • Simulation gas containing N 2 and 1% Cl 2 was fed to PFC treating apparatus 1 .
  • the Cl 2 gas was passed through inlet packed column 8 and spray column 10 to reach reactor 2 through piping 42 .
  • the catalyst temperature was 750° C. (simulation gas flow rate: 60 l/min.).
  • the Cl 2 gas was substantially not removed in inlet packed column 8 and spray column 10 .
  • Air and reaction water were fed to reactor 2 at 10 l/min. and 15 ml/min., respectively.
  • the Cl 2 gas is oxidized by the catalyst in catalyst cartridge 3 to turn to a HCl gas by reaction shown by the following reaction equation (6).
  • the HCl gas is easily soluble in water and thus was absorbed into sprayed water in discharged gas washing column 13 and removed from the simulation gas.
  • the simulation gas was discharged from discharged gas washing column 13 at a Cl 2 concentration of 100 ppm. That is, 99% of Cl 2 was removed thereby. No HCl was detected in the discharged simulation gas. No corrosion by the Cl 2 gas was found on ejector 24 .
US09/940,984 2001-03-16 2001-08-29 Method and apparatus for treating perfluorocompounds Abandoned US20020131912A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/090,817 US7128882B2 (en) 2001-03-16 2002-03-06 Method and apparatus for treating perfluorocompounds

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001075241A JP4211227B2 (ja) 2001-03-16 2001-03-16 過弗化物の処理方法及びその処理装置
JP2001-075241 2001-03-16

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/090,817 Division US7128882B2 (en) 2001-03-16 2002-03-06 Method and apparatus for treating perfluorocompounds

Publications (1)

Publication Number Publication Date
US20020131912A1 true US20020131912A1 (en) 2002-09-19

Family

ID=18932352

Family Applications (2)

Application Number Title Priority Date Filing Date
US09/940,984 Abandoned US20020131912A1 (en) 2001-03-16 2001-08-29 Method and apparatus for treating perfluorocompounds
US10/090,817 Expired - Lifetime US7128882B2 (en) 2001-03-16 2002-03-06 Method and apparatus for treating perfluorocompounds

Family Applications After (1)

Application Number Title Priority Date Filing Date
US10/090,817 Expired - Lifetime US7128882B2 (en) 2001-03-16 2002-03-06 Method and apparatus for treating perfluorocompounds

Country Status (6)

Country Link
US (2) US20020131912A1 (ja)
EP (1) EP1240937B1 (ja)
JP (1) JP4211227B2 (ja)
KR (1) KR100806011B1 (ja)
DE (1) DE60140514D1 (ja)
TW (1) TWI292721B (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060100464A1 (en) * 2004-11-05 2006-05-11 Shtarov Alexander B Purification of fluorinated alcohols
CN107638794A (zh) * 2017-10-18 2018-01-30 四川西丹孚能源科技有限公司 一种新型电解液废气零排放环保系统
CN109107322A (zh) * 2018-10-08 2019-01-01 绍兴市锐新环境设备有限公司 一种简单高效的烟雾净化器

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010001652A1 (en) * 1997-01-14 2001-05-24 Shuichi Kanno Process for treating flourine compound-containing gas
JP3994605B2 (ja) * 1999-11-26 2007-10-24 株式会社日立製作所 Ｐｆｃガスの処理方法及び処理装置
JP4218618B2 (ja) * 2004-09-10 2009-02-04 株式会社日立製作所 排ガス分解処理装置
US7736599B2 (en) 2004-11-12 2010-06-15 Applied Materials, Inc. Reactor design to reduce particle deposition during process abatement
CN101247879A (zh) * 2005-06-13 2008-08-20 应用材料股份有限公司 用于弱减废气的方法及设备
JP4966521B2 (ja) * 2005-07-22 2012-07-04 昭和電工株式会社 過弗化物含有排ガスの処理方法及び処理装置
JP5102217B2 (ja) 2005-10-31 2012-12-19 アプライド マテリアルズ インコーポレイテッド プロセス削減反応器
WO2007095150A2 (en) * 2006-02-11 2007-08-23 Applied Materials, Inc. Methods and apparatus for pfc abatement using a cdo chamber
KR100743399B1 (ko) * 2006-06-15 2007-07-27 주식회사 에코프로 반도체 제조공정에서 발생하는 염소가스와 과불화물의처리장치
TWI355964B (en) * 2007-12-05 2012-01-11 Ind Tech Res Inst Method for catalytic treating perfluorocompound ga
US8673212B2 (en) * 2010-05-28 2014-03-18 Steris Corporation Apparatus to decontaminate equipment containing internal channels
EP2910795B1 (en) 2012-10-18 2019-06-26 Hitachi Construction Machinery Co., Ltd. Work machine
US9051196B2 (en) * 2013-03-15 2015-06-09 Clack Corporation Baffle plate for a water treatment device
KR101514801B1 (ko) * 2013-06-25 2015-04-24 (주)파인텍 과불화화합물의 분리 및 재활용시스템
US9259683B2 (en) 2014-01-22 2016-02-16 Micron Technology, Inc. Methods and apparatus for treating fluorinated greenhouse gases in gas streams
KR101638325B1 (ko) 2014-09-03 2016-07-12 노영석 분리막시스템과 스크러버가 일체로 이루어지는 과불화화합물 분리시스템
US10375901B2 (en) 2014-12-09 2019-08-13 Mtd Products Inc Blower/vacuum
US10065197B2 (en) * 2016-07-12 2018-09-04 John Richmond Hydraulic particle separation apparatus for placer mining
KR101825825B1 (ko) * 2016-08-02 2018-02-06 주식회사 에코프로 질소산화물, 염화불화탄소류, 수소염화불화탄소류, 수소불화탄소류 및 과불화화합물을 포함하는 복합 폐가스의 통합 처리 시스템
KR102295177B1 (ko) 2017-07-07 2021-08-27 에스아이더블유 엔지니어링 피티이. 엘티디. 가스 오염물의 분해 및 산화를 위한 장치 및 시스템
KR102279426B1 (ko) * 2017-09-07 2021-07-19 드 노라 페르멜렉 가부시키가이샤 전해 장치
CN108295633B (zh) * 2018-03-13 2023-09-05 中国华电科工集团有限公司 一种用于火电厂脱硫塔循环浆液冷却消白烟的装置和方法
KR102332213B1 (ko) * 2019-08-22 2021-12-01 한국전력공사 플라즈마를 이용한 고농도 육불화황(sf6)의 분해 및 후처리 시스템
CN110585906A (zh) * 2019-09-11 2019-12-20 肖涛 一种危废高温烟气处理工艺
CN113247870B (zh) * 2021-04-03 2022-05-10 中船(邯郸)派瑞特种气体股份有限公司 一种制备高纯三氟化氮气体的方法及装置
CN114368728B (zh) * 2022-01-29 2022-11-08 宁德时代新能源科技股份有限公司 一种制备硫酰氟的方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4057404A (en) * 1976-02-23 1977-11-08 E. I. Du Pont De Nemours And Company Method for separating immiscible fluids of different density
US4980090A (en) * 1988-02-26 1990-12-25 Manchak Frank Process of isolating hazardous waste by centrifugal casting and product
US5605400A (en) * 1994-04-19 1997-02-25 Kojima; Hisao Mixing element and method of producing the same
US6069291A (en) * 1996-06-12 2000-05-30 Guild Associates, Inc. Catalytic process for the decomposition of perfluoroalkanes
US20010001652A1 (en) * 1997-01-14 2001-05-24 Shuichi Kanno Process for treating flourine compound-containing gas
US20030049190A1 (en) * 1997-11-14 2003-03-13 Kazuyoshi Irie Method for processing perfluorocarbon, and apparatus therefor
US6563011B2 (en) * 1999-04-28 2003-05-13 Showa Denko Kabushiki Kaisha Reactive agent and process for decomposing fluorine compounds and use thereof
US20030103883A1 (en) * 2000-04-12 2003-06-05 Yoichi Mori Method for treating exhaust gas containing fluorine-containing compound

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5785741A (en) * 1995-07-17 1998-07-28 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges, Claude Process and system for separation and recovery of perfluorocompound gases
IE80909B1 (en) * 1996-06-14 1999-06-16 Air Liquide An improved process and system for separation and recovery of perfluorocompound gases
JPH10286434A (ja) * 1997-04-15 1998-10-27 Ube Ind Ltd フッ素含有化合物の分解方法
EP1340533B1 (en) * 1997-06-20 2010-06-16 Hitachi, Ltd. A method of treatment for decomposing fluorine compounds, and catalyst and apparatus therefor
JP3269456B2 (ja) 1997-06-20 2002-03-25 株式会社日立製作所 フッ素含有化合物の分解処理方法、触媒及び分解処理装置
WO1999020374A1 (fr) * 1997-10-17 1999-04-29 Ebara Corporation Procede et appareil de traitement de gaz d'echappement issus de la fabrication de semiconducteurs
JP3217034B2 (ja) 1997-11-14 2001-10-09 株式会社日立製作所 過弗化物の処理方法及びその処理装置
TW550112B (en) * 1997-11-14 2003-09-01 Hitachi Ltd Method for processing perfluorocarbon, and apparatus therefor
US6126906A (en) * 1998-06-18 2000-10-03 Kanken Techno Co., Ltd. Apparatus for removing harmful components in a semiconductor exhaust gas
JP3976459B2 (ja) * 1999-11-18 2007-09-19 株式会社荏原製作所 フッ素含有化合物を含む排ガスの処理方法及び装置
JP4214717B2 (ja) * 2002-05-31 2009-01-28 株式会社日立製作所 過弗化物処理装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4057404A (en) * 1976-02-23 1977-11-08 E. I. Du Pont De Nemours And Company Method for separating immiscible fluids of different density
US4980090A (en) * 1988-02-26 1990-12-25 Manchak Frank Process of isolating hazardous waste by centrifugal casting and product
US5605400A (en) * 1994-04-19 1997-02-25 Kojima; Hisao Mixing element and method of producing the same
US6069291A (en) * 1996-06-12 2000-05-30 Guild Associates, Inc. Catalytic process for the decomposition of perfluoroalkanes
US20010001652A1 (en) * 1997-01-14 2001-05-24 Shuichi Kanno Process for treating flourine compound-containing gas
US20030049190A1 (en) * 1997-11-14 2003-03-13 Kazuyoshi Irie Method for processing perfluorocarbon, and apparatus therefor
US6563011B2 (en) * 1999-04-28 2003-05-13 Showa Denko Kabushiki Kaisha Reactive agent and process for decomposing fluorine compounds and use thereof
US20030103883A1 (en) * 2000-04-12 2003-06-05 Yoichi Mori Method for treating exhaust gas containing fluorine-containing compound

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060100464A1 (en) * 2004-11-05 2006-05-11 Shtarov Alexander B Purification of fluorinated alcohols
US7138551B2 (en) 2004-11-05 2006-11-21 E. I. Du Pont De Nemours And Company Purification of fluorinated alcohols
CN107638794A (zh) * 2017-10-18 2018-01-30 四川西丹孚能源科技有限公司 一种新型电解液废气零排放环保系统
CN109107322A (zh) * 2018-10-08 2019-01-01 绍兴市锐新环境设备有限公司 一种简单高效的烟雾净化器

Also Published As

Publication number Publication date
JP4211227B2 (ja) 2009-01-21
KR100806011B1 (ko) 2008-02-26
US7128882B2 (en) 2006-10-31
KR20020074048A (ko) 2002-09-28
TWI292721B (ja) 2008-01-21
EP1240937B1 (en) 2009-11-18
DE60140514D1 (de) 2009-12-31
US20020131913A1 (en) 2002-09-19
EP1240937A1 (en) 2002-09-18
JP2002273172A (ja) 2002-09-24

Similar Documents

Publication Publication Date Title
US7128882B2 (en) Method and apparatus for treating perfluorocompounds
KR100847915B1 (ko) 반도체 제조 시의 배출 가스를 산화 처리하기 위한 배기 가스 스트림 처리 장치 및 방법
US5512072A (en) Flue gas scrubbing apparatus
US20020192129A1 (en) Abatement of fluorine gas from effluent
KR20060053164A (ko) 배기가스 분해처리장치
JP2001502604A (ja) 半導体製造排気の酸化処理のための排気流処理システム
US7060235B2 (en) Method for processing perfluorocompounds exhaust
JP5165861B2 (ja) 過弗化物の処理方法及び処理装置
KR102489252B1 (ko) 배기가스 처리방법 및 배기가스 처리장치
US5743939A (en) Waste gas processing apparatus and method for semiconductor fabricating equipment
CN102179154A (zh) 一种气体洗涤塔
CN107376637A (zh) 含由光氧化催化系统的喷漆废气处理装置
JP5289668B2 (ja) 湿式排煙脱硫装置
CN215208573U (zh) 一种高氨废水吹脱系统
KR102041520B1 (ko) 질소산화물 및 황산화물의 통합 처리 시스템
JP2011143329A (ja) 三フッ化塩素含有ガスの除害処理装置
JP2007050334A (ja) 排ガス浄化方法及び設備
US7101425B2 (en) Washer and method for purifying gases
CN219023834U (zh) 一种乙二醇废气接收罐
CN212348690U (zh) 氧化性气态等离子体发生装置及烟气治理装置
JP2006175317A (ja) 半導体製造プロセスからの排気ガスの処理装置
CN108031248A (zh) 一种基于传感器的废气处理装置
CN220951280U (en) Horizontal high-efficiency stripping equipment for treating VOC (volatile organic compound) wastewater
KR20190039029A (ko) 노 플랜트 및 노 가스를 처리하는 프로세스
CN205850544U (zh) 用于火电厂的烟气脱硝除雾一体化装置

Legal Events

Date Code Title Description
AS Assignment

Owner name: HITACHI, LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TAMATA, SHIN;KOUKUN, RI;SHIBANO, YOSHIKI;AND OTHERS;REEL/FRAME:012304/0170;SIGNING DATES FROM 20011025 TO 20011031

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION