US20010026015A1 - Semiconductor device having reliable electrical connection - Google Patents

Semiconductor device having reliable electrical connection Download PDF

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Publication number
US20010026015A1
US20010026015A1 US09/816,061 US81606101A US2001026015A1 US 20010026015 A1 US20010026015 A1 US 20010026015A1 US 81606101 A US81606101 A US 81606101A US 2001026015 A1 US2001026015 A1 US 2001026015A1
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Prior art keywords
electrodes
projected
resin material
pad
wiring substrate
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US09/816,061
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Inventor
Gorou Ikegami
Eita Iizuka
Hirofumi Horita
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NEC Electronics Corp
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NEC Corp
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Assigned to NEC CORPORATION reassignment NEC CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HORITA, HIROFUMI, IIZUKA, EITA, IKEGAMI, GOROU
Publication of US20010026015A1 publication Critical patent/US20010026015A1/en
Assigned to NEC ELECTRONICS CORPORATION reassignment NEC ELECTRONICS CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NEC CORPORATION
Abandoned legal-status Critical Current

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Definitions

  • the present invention relates generally to a semiconductor device in which a semiconductor pellet having projected electrodes and a wiring substrate having pad electrodes are bonded via a resin material having inorganic filler distributed therein, and a method of manufacturing such semiconductor device. More particularly, the present invention relates to a semiconductor device and method of manufacturing the same in which reliability of electrical connection between projected electrodes of a semiconductor pellet and pad electrodes of a wiring substrate can be improved.
  • FIG. 10 shows a cross sectional view of an example of a conventional semiconductor device which is used as such an electronic component.
  • the conventional semiconductor device shown in FIG. 10 comprises a wiring substrate 104 , and a semiconductor pellet 101 mounted on the wiring substrate 104 .
  • the semiconductor pellet 101 has a semiconductor substrate 102 , and a plurality of projected electrodes or bump electrodes 103 formed on one of the major surfaces of the semiconductor substrate 102 .
  • the semiconductor substrate 102 there are formed a number of semiconductor elements and/or electronic circuit elements which are internally coupled to form electronic circuit unit or units.
  • Each of the projected electrodes 103 is formed as follows. First, a tip portion of a wire made of gold and the like is melted to form a metal ball thereat. The metal ball is pressed and coupled onto the semiconductor substrate 102 . Thereafter, the wire is pulled and cut at a middle portion thereof. In this way, a number of projected electrodes 103 are formed on the semiconductor substrate 102 .
  • FIG. 11 is a cross sectional view of one of the projected electrodes 103 in a condition before mounting the semiconductor pellet 101 onto the wiring substrate 104 .
  • the projected electrode 103 has a portion having a larger diameter, that is, a base portion 103 a, and a portion having a smaller diameter, that is, a column-like portion or an elongated portion 103 b.
  • a tip portion of the column-like portion 103 b has a rotated parabola shape.
  • a diameter of the base portion 103 a can be 70-100 ⁇ m, and a height thereof can be 15-25 ⁇ m.
  • a diameter of the column-like portion 103 b can be approximately 30 ⁇ m, and a length thereof can be 45-55 ⁇ m. By changing the diameter of the wire used, it is possible to change the diameters of the portions 103 a and 103 b.
  • the wiring substrate 104 comprises an insulating substrate 105 which has conductor patterns formed on one of the surfaces thereof and not shown in the drawing, and pad electrodes 106 formed on portions of the conductor patterns on the insulating substrate 105 .
  • the insulating substrate 105 is made of heat-resistant material.
  • the locations of the pad electrodes 106 correspond to the locations of the projected electrodes 103 .
  • the conductive patterns on the insulating substrate 105 are formed, for example, by etching a copper foil formed on the insulating substrate and having a thickness of 12-18 ⁇ m.
  • the pad electrodes 106 are formed by forming, on the copper foil, a nickel plated layer having a thickness of 3-5 ⁇ m and by further forming a gold plated layer having a thickness of 0.03-1.0 ⁇ m.
  • the semiconductor device shown in FIG. 10 further comprises a resin material portion 107 for sealing purposes.
  • minute inorganic filler 108 of alumina or silica having a grain size of 2-6 ⁇ m is dispersed in the resin material portion 107 at a concentration or a rate of 50-80 weight percent.
  • FIG. 12A through FIG. 12D are cross sectional views showing a conventional method of manufacturing the semiconductor device of FIG. 10 in order of manufacturing steps.
  • the wiring substrate 104 are located on a flat supporting table 109 .
  • the supporting table 109 has a heater built therein and not shown in the drawing, and can heat the wiring substrate 104 according to the necessity.
  • liquid resin material 107 a is applied on the wiring substrate 104 .
  • the semiconductor pellet 101 is sucked at the bottom end of a suction collet 110 such that the projected electrodes 103 of the semiconductor pellet 101 face downward.
  • the semiconductor pellet 101 sucked by the suction collet 110 is transferred over the supporting table 109 .
  • the suction collet 110 has a heater built therein and not shown in the drawing for heating the semiconductor pellet 101 .
  • the location of the semiconductor pellet 101 is adjusted such that the projected electrodes 103 are located just above the corresponding pad electrodes 106 on the wiring substrate 104 covered by the liquid resin material 107 a. Then, the suction collet 110 is lowered. Thereby, as shown in FIG. 12D, the projected electrodes 103 are contacted and pressed on the pad electrodes 106 within the resin material 107 a, and the column-like portions 103 b of the projected electrodes 103 are crushed and expand in radial directions.
  • the liquid resin material 107 a is simultaneously pushed toward the periphery of the semiconductor pellet 101 .
  • the liquid resin material 107 a covers the surface of the semiconductor pellet 101 on which the pad electrodes are formed and covers coupling portions between the projected electrodes 103 and the pad electrodes 106 .
  • the semiconductor pellet 101 is heated by the heater within the suction collet 110 , and the wiring substrate 104 is heated by the heater within the supporting table 109 .
  • the wiring substrate 104 is heated to 80-100 degrees Celsius and the semiconductor pellet 101 is heated to 270-300 degrees Celsius, while exerting load of 0.294-0.49N (30-50 gf) for 10-60 seconds onto each of the projected electrodes 103 .
  • the projected electrodes 103 and the pad electrodes 106 are electrically coupled by thermo compression bonding.
  • the resin material 107 a is also heated and cured.
  • the semiconductor pellet 101 is joined with the wiring substrate 104 , and coupling portions between the projected electrodes 103 and the pad electrodes 106 together with the wiring layer not shown in the drawing on the surface of the semiconductor pellet 101 are protected. In this way, the semiconductor device shown in FIG. 10 is fabricated.
  • the projected electrodes and the pad electrodes are electrically coupled by pressure welding or compression welding, and compressed condition is maintained by the bonding force of the resin material. Thus, it is impossible to release pressuring of the semiconductor pellet until the resin material cures completely.
  • the resin material having a short curing time is used.
  • pressuring and heating of the semiconductor pellet are released in the condition the resin material is not yet cured completely, the following disadvantages arise. That is, since the quantity of contraction of the electrodes is larger than that of the resin material, the electrical coupling between the projected electrodes and the pad electrodes becomes unstable. Therefore, in practice, it is impossible to release the pressuring of the semiconductor pellet until the resin material cures sufficiently, and it is impossible to reduce processing time.
  • a resin substrate is generally used as the wiring substrate 104 .
  • a thermal expansion coefficient of the semiconductor pellet 101 and that of the wiring substrate 104 differ from each other greatly. Therefore, during operation of the semiconductor device, the wiring substrate 104 which has a larger thermal expansion coefficient than that of the semiconductor pellet 101 warps largely due to the heat generated by the semiconductor pellet 101 . As a result thereof, there is a possibility that a stress concentrates in the coupling portion between the projected electrodes and the pad electrodes and, thereby, a reliability of the coupling portion is deteriorated.
  • the thermal expansion coefficient of the resin material 107 a in which the inorganic filler 108 is dispersed can be a medium value between the thermal expansion coefficient of the semiconductor pellet 101 and that of the wiring substrate 104 . Since the stress caused at the coupling portion between the projected electrodes and the pad electrodes is mitigated, it is possible to avoid delamination of the coupling portion between the projected electrodes and the pad electrodes.
  • the resin substrate is used as the wiring substrate 104 , and a large quantity of inorganic filler 108 is dispersed in the resin material 107 for bonding. Therefore, the inorganic filler 108 is also disposed densely between the projected electrodes 103 and the pad electrodes 106 . When the projected electrodes 103 are superposed on the pad electrodes 106 , the inorganic filler 108 is also put into the interface between the projected electrodes 103 and the pad electrodes 106 with high probability.
  • the above-mentioned problems become prominent when each of the projected electrodes is downsized and a cross sectional area of each of the projected electrodes is decreased according to an increase in the number of electrodes.
  • the above-mentioned problems occur in the prior art 3 in which the projected electrodes and the pad electrodes are ultrasonic bonded, as well as in the prior arts 1 and 2 in which the projected electrodes are pressed onto the pad electrodes and the pad electrodes and the pad electrodes are heated for thermo compression bonding. It was impossible to remove the inorganic filler remaining in the interface portions between the projected electrodes and the pad electrodes. Therefore, a manufacturing yield of a semiconductor device is deteriorated and manufacturing costs thereof become high.
  • a method of manufacturing a semiconductor device comprising: preparing a semiconductor pellet having a plurality of projected electrodes; preparing a wiring substrate having a plurality of pad electrodes; applying liquid resin material including inorganic filler dispersed therein on the wiring substrate; opposing the semiconductor pellet to the wiring substrate via the resin material, and electrically coupling the projected electrodes and the pad electrodes by superposing and pressing the projected electrodes onto the pad electrodes, the projected electrodes and the pad electrodes being electrically coupled while vibrating the resin material in the proximity of the projected electrodes and excluding the inorganic filler from superposed interface portions between the projected electrodes and the pad electrodes; and curing the resin material to join the semiconductor pellet and the wiring substrate.
  • an end portion of each of the projected electrodes has a cross section which becomes smaller toward the tip portion thereof.
  • the resin material in the proximity of the projected electrodes is vibrated by applying ultrasonic vibration to the semiconductor pellet or to the wiring substrate.
  • the projected electrodes are pressed onto the pad electrodes such that the projected electrodes are elastically deformed, and application of the ultrasonic vibration is started in a condition the projected electrodes are elastically deformed.
  • an output of the ultrasonic vibration is 20-100 mW per one projected electrode.
  • an application time of the ultrasonic vibration is 0.1-5 seconds.
  • the projected electrodes and the pad electrodes are ultrasonic bonded.
  • the projected electrodes and the pad electrodes are thermo compression bonded by pressing the projected electrodes onto the pad electrodes while heating the semiconductor pellet.
  • the resin material is heated to lower viscosity of the resin material.
  • the inorganic filler comprises minute powder of alumina or silica.
  • a semiconductor device comprising: a wiring substrate having a plurality of pad electrodes; a semiconductor pellet having a plurality of projected electrodes and opposed to the wiring substrate, the projected electrodes of the semiconductor pellet being electrically coupled with the pad electrodes of the wiring substrate, respectively; and a resin material portion filling a space between the semiconductor pellet and the wiring substrate and joining the semiconductor pellet and the wiring substrate, the resin material including inorganic filler dispersed therein; wherein the inorganic filler hardly exists in superposed interface portions between the projected electrodes and the pad electrodes, and a dispersion rate of the inorganic filler in the resin material is larger in portions near and around the superposed interface portions than in other portions of the resin material.
  • a method of manufacturing a semiconductor device comprising: preparing a semiconductor pellet having a plurality of projected electrodes; preparing a wiring substrate having a plurality of pad electrodes; applying liquid resin material including inorganic filler dispersed therein on the wiring substrate; opposing the semiconductor pellet to the wiring substrate via the resin material, and superposing and pressing the projected electrodes onto the pad electrodes, the projected electrodes being pressed onto the pad electrodes such that the projected electrodes are elastically deformed; applying ultrasonic vibration to the semiconductor pellet and/or the wiring substrate in a condition the projected electrodes are pressed onto the pad electrodes such that the projected electrodes are elastically deformed, and electrically coupling the projected electrodes and the pad electrodes; and curing the resin material to join the semiconductor pellet and the wiring substrate.
  • an end portion of each of the projected electrodes has a cross section which becomes smaller toward the tip portion thereof.
  • the projected electrodes are pressed onto the pad electrodes such that the projected electrodes are elastically deformed, and electrically coupling the projected electrodes and the pad electrodes, the projected electrodes expand in radial directions and are compressed in axial direction by applying the ultrasonic vibration to the semiconductor pellet, the projected electrodes and the pad electrodes being electrically coupled while excluding the inorganic filler from superposed interface portions between the projected electrodes and the pad electrodes.
  • an output of the ultrasonic vibration is 20-100 mW per one projected electrode.
  • an application time of the ultrasonic vibration is 0.1-5 seconds.
  • the resin material is heated to lower viscosity of the resin material.
  • the inorganic filler comprises minute powder of alumina or silica.
  • FIG. 1 is a schematic cross sectional view of a semiconductor device according to an embodiment of the present invention.
  • FIG. 2 is a partial enlarged cross sectional view of the semiconductor device of FIG. 1;
  • FIG. 3 is a schematic cross sectional view illustrating a structure of a semiconductor pellet during a manufacturing process of a semiconductor device according to an embodiment of the present invention
  • FIG. 4 is a schematic cross sectional view illustrating a structure of a wiring substrate during a manufacturing process of a semiconductor device according to an embodiment of the present invention
  • FIG. 5 is a schematic cross sectional view illustrating a structure including a liquid resin portion applied on a wiring substrate during a manufacturing process of a semiconductor device according to an embodiment of the present invention
  • FIG. 6 is a schematic cross sectional view illustrating a structure including a semiconductor pellet and a wiring substrate during a manufacturing process of a semiconductor device according to an embodiment of the present invention
  • FIG. 7 is a graph showing relationships of heights of a semiconductor pellet and load exerted on the semiconductor pellet with respect to time;
  • FIG. 8 is a partial enlarged cross sectional view which shows a cross sectional structure in the vicinity of a projected electrode and a pad electrode and which shows a condition immediately after the projected electrode contacts the pad electrode;
  • FIG. 9 is a partial enlarged cross sectional view showing a condition in the vicinity of the projected electrode and the pad electrode just after applying ultrasonic vibration;
  • FIG. 10 shows a cross sectional view of an example of a conventional semiconductor device
  • FIG. 11 is a cross sectional view of a projected electrode in the condition before mounting a semiconductor pellet onto the wiring substrate.
  • FIG. 12A through FIG. 12D are cross sectional views illustrating a conventional method of manufacturing a semiconductor device in order of manufacturing steps.
  • FIG. 1 is a schematic cross sectional view of a semiconductor device according to an embodiment of the present invention.
  • FIG. 2 is a partial enlarged cross sectional view of FIG. 1.
  • the semiconductor device shown in FIG. 1 comprises a wiring substrate 4 , and a semiconductor pellet 1 mounted on the wiring substrate 4 , similarly to the semiconductor device of FIG. 10.
  • the semiconductor pellet 1 has a semiconductor substrate 2 , and a plurality of projected electrodes 3 formed on one of the major surfaces of the semiconductor substrate 2 .
  • the semiconductor substrate 2 there are formed a number of semiconductor elements or electronic circuit elements which are not shown in the drawing and which are wired internally to form an electronic circuit device.
  • the projected electrodes 3 have approximately similar shape to that of the projected electrodes 103 mentioned above.
  • the wiring substrate 4 comprises an insulating substrate 5 .
  • conductive patterns not shown in the drawing, and, on portions of the conductive patterns, there are formed pad electrodes 6 .
  • the locations of the pad electrodes 6 correspond to the locations of the projected electrodes 3 .
  • the semiconductor device of FIG. 1 further comprises a resin material portion 7 which fills a space between the semiconductor pellet 1 and the wiring substrate 4 .
  • the resin material portion 7 bonds or joins the semiconductor pellet 1 and the wiring substrate 4 , and protects coupling portions between the projected electrodes 3 and the pad electrodes 6 , the conductive patterns on the wiring substrate 4 not shown in the drawing, and the like.
  • thermal expansion coefficient of the semiconductor pellet 1 and that of the wiring substrate 4 differ from each other considerably. Therefore, there is a possibility that, due to the heat generated by the semiconductor pellet 1 during operation of the semiconductor device, the wiring substrate 4 warps and stress concentrates in the coupling portions between the projected electrodes 3 and the pad electrodes 6 .
  • inorganic filler 8 is dispersed in the resin material portion 7 .
  • the inorganic filler 8 can be made of a material having a thermal expansion coefficient close to that of the semiconductor pellet 1 , for example, can be made of alumina, silica or the like.
  • the thermal expansion coefficient of the resin material portion 7 in which the inorganic filler 8 is dispersed becomes a medium value between the thermal expansion coefficient of the semiconductor pellet 1 and that of the wiring substrate 4 .
  • the semiconductor pellet 1 and the wiring substrate 4 are opposed and joined by the cured resin material portion 7 .
  • the projected electrodes 3 and pad electrodes 6 are superposed and electrically coupled with each other.
  • the characteristic features of the semiconductor device according to this embodiment are as follows. That is, when the projected electrodes 3 and the pad electrodes 6 are superposed, the inorganic filler 8 existing within the resin material 7 between the projected electrodes 3 and the pad electrodes 6 can be removed sufficiently from the superposed interface portion between the projected electrodes 3 and the pad electrodes 6 , as shown in FIG. 2. As also shown in FIG. 2, the inorganic filler 8 is disposed at high concentration around and near the outside of the interface portion between each of the projected electrodes 3 and the corresponding one of the pad electrodes 6 .
  • the area of each of the superposed portions between the projected electrodes 3 and the pad electrodes 6 becomes large, and the projected electrodes 3 expand radially.
  • the rate of enlargement of each of the superposed areas between the projected electrodes 3 and the pad electrodes 6 and the rate of radial expansion of the peripheral wall of each of the projected electrodes 3 are appropriate, the inorganic filler 8 existing near the interface portion between the projected electrodes 3 and the pad electrodes 6 is excluded therefrom and is not caught in the interface portions between the projected electrodes 3 and the pad electrodes 6 .
  • the semiconductor device fabricated by the conventional method mentioned above was carefully inspected. Minute inorganic filler having a grain size of, for example, 2-6 ⁇ m is dispersed in the resin material by 50-80 weight percent and such resin material is applied on the wiring substrate. Then, the semiconductor pellet is pressed onto the wiring substrate and heated to thermo compression bond between the projected electrodes and the pad electrodes. In such case, it was confirmed that the inorganic filler disperses and remains in an area of 10 percent or more of the area of each of the superposed interface portions between the projected electrodes and the pad electrodes. Also, it was confirmed that, within the area in which the inorganic filler remains, total area occupied by the inorganic filler itself becomes approximately 10 percent of the area in which the inorganic filler remains.
  • the semiconductor device according to the present invention even if the same resin material mentioned above is used, only several pieces of inorganic filler remain within an area which is 4 percent or less of the superposed interface area between each of the projected electrodes and the corresponding one of the pad electrodes. The inorganic filler hardly remain in the peripheral portion within each of the superposed interface portions between the projected electrodes and the pad electrodes.
  • each of the projected electrodes 3 As the size of each of the projected electrodes 3 is decreased to downsize the semiconductor device or to increase the number of electrodes, the relative area of each of the superposed interface portion with respect to the size of the inorganic filler 8 becomes small. Even in such case, in the semiconductor device according to the present embodiment, the inorganic filler 8 is removed sufficiently from the superposed interface portions between the projected electrodes 3 and the pad electrodes 6 , so that it is possible to maximize an effective electrical conduction area of each of the projected electrodes 3 and to lower electrical resistance between the projected electrodes 3 and the pad electrodes 6 . Therefore, it is possible to realize a semiconductor device having stable electrical characteristics.
  • concentration or dispersion rate of the inorganic filler 8 around and near the outside portion of the interface portion between each of the projected electrodes 3 and the corresponding one of the pad electrodes 6 is larger than that of the inorganic filler 8 in other portion of the resin material portion 7 . That is, concentration of the resin material itself in the proximity of coupling portions between the projected electrodes 3 and the pad electrodes 6 is relatively small. Therefore, in the proximity of the coupling portions between the projected electrodes 3 and the pad electrodes 6 , penetration of moisture is inhibited by the inorganic filler 8 and it is possible to avoid moisture from penetrating into the coupling portions between the projected electrodes 3 and the pad electrodes 6 .
  • the inorganic filler 8 having a thermal expansion coefficient close to that of the projected electrodes 3 exists around and near the outside portions of the coupling portions between the projected electrodes 3 and the pad electrodes 6 with high concentration, it is possible to effectively mitigate the stress caused by the raise and fall of temperature at the coupling portion between the projected electrodes 3 and the pad electrodes 6 . Thereby, reliability of electrical connection between the projected electrodes 3 and the pad electrodes 6 can be improved.
  • a semiconductor pellet 1 is prepared which has projected electrodes 3 formed on one of the major surfaces thereof.
  • the projected electrodes 3 of the semiconductor pellet 1 can be formed by using, for example, plating, compression bonding of metal balls, and the like.
  • the projected electrodes 3 have similar shape to that of the above-mentioned projected electrodes 103 , and can be fabricated in a manner similar to the method mentioned above.
  • the projected electrodes 3 can be fabricated by compression bonding gold balls formed at tip portions of gold wires to the semiconductor pellet 1 and thereafter pulling up the wires.
  • the projected electrode 3 fabricated in this way has a portion having a larger diameter, that is, a base portion 3 a, and a portion having a smaller diameter, that is, a column-like portion or an elongated portion 3 b.
  • the tip portion of the column-like portion 3 b has a rotated parabola shape.
  • a diameter of the base portion 3 a can be 80-100 ⁇ m, and a height thereof can be 15-25 ⁇ m.
  • a diameter of the column-like portion 3 b can be approximately 30 ⁇ m, and a length thereof can be 45-55 ⁇ m.
  • the diameter of the base portion 3 a can be approximately 70 ⁇ m.
  • the semiconductor pellet 1 of 10 mm square (10 mm ⁇ 10 mm) it is possible to form, for example, 215 projected electrodes 3 in the peripheral portion on the surface of the semiconductor pellet 1 .
  • the semiconductor pellet 1 of 7 mm square (7 mm ⁇ 7 mm) it is possible to form, for example, 208 projected electrodes 3 .
  • the wiring substrate 4 as shown in the cross sectional view of FIG. 4 is prepared.
  • the insulating substrate 5 constituting the wiring substrate 4 can be made by using a glass epoxy substrate, a resin substrate having heat resistance and electrical insulation such as a polyimide substrate and the like, or a ceramic substrate.
  • a resin substrate is used to reduce size, weight and thickness of the semiconductor device.
  • the pad electrodes 6 are formed on the insulating substrate 5 , for example, as follows. Copper foil patterns are formed on the insulating substrate 5 , for example, by etching a copper foil having a thickness of 12-18 ⁇ m formed on the insulating substrate 5 . Square shaped land areas each having 100 ⁇ m square are exposed from the copper foil patterns through a resist layer formed on the copper foil patterns and the insulating substrate 5 . On the square shaped land areas of the copper foil patterns, a nickel plated layer having a thickness of 3-5 ⁇ m and a gold plated layer having a thickness of 0.03-1.0 ⁇ m are sequentially formed. Thereby, the pad electrodes 6 are formed in correspondence to the locations of the projected electrodes 103 of the semiconductor pellet 1 .
  • the wiring substrate 4 is located on a flat supporting table 9 such that the pad electrodes 6 face upward.
  • the supporting table 9 has a heater built therein and not shown in the drawing.
  • a liquid resin material 7 a is applied onto the wiring substrate 4 .
  • the wiring substrate 4 is formed of a resin substrate, thermosetting resin of epoxy system and the like is used as base material of the resin material 7 a, and minute inorganic filler 8 is dispersed in the resin material 7 a at a concentration of 50-80 weight percent, taking thermal expansion coefficients of the semiconductor pellet 1 and wiring substrate 4 into consideration.
  • the inorganic filler 8 is made, for example, of alumina or silica. Grain size of the inorganic filler 8 is, for example, 2-6 ⁇ m.
  • the resin material 7 a is applied such that an area including the pad electrodes 6 on the wiring substrate 4 is covered thereby. As will be mentioned later, after the semiconductor pellet 1 is mounted on the wiring substrate 4 , the resin material 7 a is cured and becomes the resin material portion 7 in the semiconductor device shown in FIG. 1.
  • the semiconductor pellet 1 is sucked at the bottom end of a suction collet 10 such that the projected electrodes 103 face downward.
  • the suction collet 10 is coupled to an end portion of an ultrasonic horn not shown in the drawing, thereby it is possible to apply ultrasonic vibration to the semiconductor pellet 1 .
  • the projected electrodes 3 and the pad electrodes 6 are located such that it is possible to superpose both electrodes, and the suction collet 10 is lowered while heating the resin material 7 a via the wiring substrate 4 at a temperature of 80-120 degrees Celsius. Thereby, the tip portions of the projected electrodes 3 are inserted into the resin material 7 a and superposed onto the pad electrodes 6 .
  • FIG. 7 is a graph showing heights of the semiconductor pellet 1 and load exerted on the semiconductor pellet 1 with respect time.
  • An abscissa of the graph shows time, and an ordinate of the graph shows heights of the semiconductor pellet 1 and load exerted on the semiconductor pellet 1 by using arbitrary unit.
  • FIG. 7 at time t 0 , the descent of the semiconductor pellet 1 is started.
  • a projected electrode 3 contacts a pad electrode 6 .
  • FIG. 8 is a partial enlarged cross sectional view which shows a cross sectional structure in the vicinity of the projected electrode 3 and the pad electrode 6 and which shows a condition just after the projected electrode 3 contacts the pad electrode 6 at time t 1 .
  • the projected electrode 3 is pressed by the suction collet 10 .
  • the pressing force the suction collet 10 presses the semiconductor pellet 1 is detected by a load cell not shown in the drawing and is controlled to become a predetermined value.
  • the semiconductor pellet 1 is pressed such that the pressing force per one projected electrode 3 becomes, for example, 0.196-0.392N (20-40 gf).
  • the semiconductor pellet 1 By pressing the semiconductor pellet 1 in this way, each of the tip portions of the projected electrodes 3 having a rotated parabola shape is crushed and the area of contact between the projected electrode 3 and the pad electrode 6 becomes large.
  • the column shaped portion of the projected electrode 3 is compressed in the axial direction and resiliently or elastically deformed. However, it hardly expand in radial directions. Therefore, the projected electrode 3 does not deform much.
  • ultrasonic vibration is applied to the semiconductor pellet 1 via the suction collet 10 .
  • strength or output power of the ultrasonic vibration is, for example, 20-100 mW per one projected electrode 3 and the ultrasonic vibration is applied for 0.1-5 seconds.
  • FIG. 9 is a partial enlarged cross sectional view showing a condition in the vicinity of the projected electrode 3 and the pad electrode 6 just after applying ultrasonic vibration.
  • the area of the superposed interface portion of the projected electrode 3 becomes large and the projected electrode 3 is electrically coupled with the pad electrode 6 .
  • viscosity of the resin material 7 a in the vicinity of the projected electrode 3 which vibrates due to the application of the ultrasonic vibration is lowered. Therefore, the inorganic filler 8 dispersed in the resin material 7 a near the projected electrode 3 becomes easily movable.
  • the inorganic filler 8 in the resin material 7 a existing between the tip portion of the projected electrode 3 having a rotated parabola shape and the pad electrode 6 , together with the resin material 7 a, is pushed outward from the space between the projected electrode 3 and the pad electrode 6 .
  • the ultrasonic vibration is applied from time t 3 to time t 4 .
  • load on the semiconductor pellet 1 varies largely just after time t 3 , but the load again becomes constant thereafter.
  • the height of the semiconductor pellet 1 varies rapidly for a short time just after time t 3 , but the height again becomes constant thereafter.
  • the rapid change of the height of the semiconductor pellet 1 is caused by a rapid expansion of the diameter of the column portion 3 b from approximately 30 ⁇ m to approximately 50 ⁇ m.
  • the pressure between the projected electrode 3 and the pad electrode 6 also rises rapidly. Therefore, the resin material 7 a existing between the projected electrode 3 and the pad electrode 6 is compressed, and it is possible to exclude the inorganic filler 8 from the superposed interface portion between the projected electrode 3 and pad electrode 6 .
  • the projected electrodes 3 and the pad electrodes 6 are superposed and a predetermined pressuring force is applied therebetween. Then, while keeping the projected electrodes 3 in an elastically deformed condition, ultrasonic vibration having a relatively small energy is applied to the projected electrodes 3 for a relatively long time. Thereby, the resin material and the inorganic filler can be removed from the superposed interface portion between the projected electrodes 3 and the pad electrodes 6 , and the projected electrodes 3 and the pad electrodes 6 can be electrically coupled. Therefore, it is possible to decrease electrical resistance between the projected electrodes 3 and the pad electrodes 6 .
  • the inorganic filler 8 excluded from the space between the projected electrodes 3 and the pad electrodes 6 is distributed with a high concentration near and around the coupling portions between the projected electrodes 3 and the pad electrodes 6 . That is, concentration or dispersion rate of the inorganic filler 8 in the resin material becomes larger in the portions near and around the coupling portions than in other portions of the resin material. Therefore, in the portion near and around the coupling portion between the projected electrodes 3 and the pad electrodes 6 , passage of moisture therethrough is prevented by the inorganic filler 8 . Therefore, it is possible to prevent moisture from entering into the coupling portions between the projected electrodes 3 and the pad electrodes 6 .
  • the inorganic filler 8 having a thermal expansion coefficient close to that of the projected electrodes 3 exists with high concentration near and around the coupling portions between the projected electrodes 3 and the pad electrodes 6 . Therefore, it is possible to effectively mitigate a stress exerted on the coupling portions between the projected electrodes 3 and the pad electrodes 6 and caused by the temperature rise or fall. As a result, it is possible to fabricate a semiconductor device having an improved reliability of electrical coupling between the projected electrodes 3 and the pad electrodes 6 .
  • the pressuring force per one projected electrode 3 of the semiconductor pellet 1 can be determined appropriately, within a range in which the projected electrodes can maintain elastically deformed condition, depending on the diameter, the shape and the like of the projected electrodes 3 .
  • the output power of the ultrasonic vibration per one projected electrode is preferably in a range from 20 to 100 mW. In case the output power is smaller than 20 mW, even if the ultrasonic vibration is applied for a long time, it is impossible to exclude the resin material 7 a and the inorganic filler 8 remaining in the superposed interface portion between the projected electrodes 3 and the pad electrodes 6 . Therefore, electrical coupling between the projected electrodes 3 and the pad electrodes 6 becomes unstable.
  • the time of application of the ultrasonic vibration is preferably in a range from 0.1 to 5 seconds. In case it is shorter than 0.1 second, it is impossible to sufficiently exclude the resin material 7 a and the inorganic filler 8 remaining in the superposed interface portion between the projected electrodes 3 and the pad electrodes 6 . Also, even if it is longer than 5 seconds, the electrical connection between the projected electrodes 3 and the pad electrodes 6 is not improved any more.
  • ultrasonic vibration is applied to the semiconductor pellet 1 to vibrate the projected electrodes 3 and thereby the resin material 7 a near the projected electrodes 3 is vibrated.
  • thermo compression bonding In place of electrically coupling the projected electrodes 3 and the pad electrodes 6 by ultrasonic bonding, it is possible to electrically couple the projected electrodes 3 and the pad electrodes 6 by using thermo compression bonding. In such case, it is also possible, after vibrating the resin material 7 a to lower viscosity of the resin material near the projected electrodes 3 and the pad electrodes 6 , to press the projected electrodes 3 on the pad electrodes 6 and to apply heat to perform thermo compression bonding. It is also possible to use a combination of ultrasonic bonding and thermo compression bonding.
  • thermosetting resin is used as the resin material 7 a
  • the resin material 7 a is heated to lower viscosity thereof, before applying ultrasonic vibration to the resin material 7 a. Thereby, it is possible to cure the resin material 7 a within a short time after the electrical coupling between the projected electrodes 3 and the pad electrodes 6 is completed.
  • each of the projected electrodes of electrode When the diameter or size of each of the projected electrodes of electrode is reduced to cope with needs for downsizing the semiconductor device and/or for increasing the number of the electrodes, the area of each of the superposed interface portions between the electrodes becomes relatively small when compared with the size of the inorganic filler. Even in such case, in accordance with the present invention, it is possible to exclude the inorganic filler from the superposed interface portions between the projected electrodes and the pad electrodes sufficiently. Thereby, it is possible to make the effective conduction area of each projected electrode maximum and to keep electrical resistance between the projected electrode and the pad electrode minimum. Therefore, a semiconductor device having stable electrical characteristics can be realized.
  • concentration or dispersion rate of the inorganic filler around and near the outside portion of the interface portion between each of the projected electrodes and the corresponding one of the pad electrodes is larger than that of the inorganic filler in other portion of the resin material portion. That is, concentration of the resin material itself in the proximity of coupling portions between the projected electrodes and the pad electrodes is relatively small. Therefore, in the proximity of the coupling portions between the projected electrodes and the pad electrodes, penetration of moisture is inhibited by the inorganic filler and it is possible to avoid moisture from penetrating into the coupling portions between the projected electrodes and the pad electrodes. Thus, it is possible to improve moisture resistance and reliability of a semiconductor device.
  • the inorganic filler having a thermal expansion coefficient close to that of the projected electrodes exists around and near the outside portions of the coupling portions between the projected electrodes and the pad electrodes with high concentration, it is possible to effectively mitigate the stress caused by the raise and fall of temperature at the coupling portion between the projected electrodes and the pad electrodes. Thereby, reliability of electrical connection between the projected electrodes and the pad electrodes can be improved.
  • vibration is applied to the projected electrodes or the pad electrodes while keeping the projected electrodes in an elastically deformed condition and thereby it becomes possible to effectively remove resin material and the inorganic filler from the superposed interface portions between the projected electrodes and the pad electrodes. Therefore, it is possible to fabricate a semiconductor device in which sure electrical coupling between the projected electrodes of the semiconductor pellet and the pad electrodes of the wiring substrate can be realized.
  • the inorganic filler excluded from the space between the projected electrodes and the pad electrodes is distributed with a high concentration near and around the coupling portions between the projected electrodes and the pad electrodes. That is, concentration of the inorganic filler in the resin material becomes larger in the portions near and around the coupling portions than in other portions of the resin material. Therefore, in the portion near and around the coupling portion between the projected electrodes and the pad electrodes, passage of moisture therethrough is prevented by the inorganic filler. Therefore, it is possible to prevent moisture from entering into the coupling portions between the projected electrodes and the pad electrodes. Thereby, it is possible to fabricate a semiconductor device having improved moisture resistance and improved reliability.
  • the inorganic filler having a thermal expansion coefficient close to that of the projected electrodes exists with high concentration near and around the coupling portions between the projected electrodes and the pad electrodes. Therefore, it is possible to effectively mitigate a stress exerted on the coupling portions between the projected electrodes and the pad electrodes and caused by the temperature rise or fall. As a result, it is possible to fabricate a semiconductor device having an improved reliability of electrical coupling between the projected electrodes and the pad electrodes.

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030098912A1 (en) * 2001-11-29 2003-05-29 Shigeru Hosokai Solid-state image pickup apparatus and fabricating method thereof
US20040106232A1 (en) * 2001-10-29 2004-06-03 Fujitsu Limited Method of making electrode-to-electrode bond structure and electrode-to-electrode bond structure made thereby
US20040232533A1 (en) * 2003-05-21 2004-11-25 Olympus Corporation Semiconductor apparatus and fabricating method for the same
US20040232560A1 (en) * 2003-05-22 2004-11-25 Chao-Yuan Su Flip chip assembly process and substrate used therewith
US20080003721A1 (en) * 2002-08-16 2008-01-03 Texas Instruments Incorporated Vibration-Assisted Method for Underfilling Flip-Chip Electronic Devices

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012145910A (ja) * 2010-12-24 2012-08-02 Mitsumi Electric Co Ltd 構造体
KR20180041296A (ko) * 2016-10-13 2018-04-24 삼성디스플레이 주식회사 표시 패널

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040106232A1 (en) * 2001-10-29 2004-06-03 Fujitsu Limited Method of making electrode-to-electrode bond structure and electrode-to-electrode bond structure made thereby
US6873056B2 (en) * 2001-10-29 2005-03-29 Fujitsu Limited Electrode-to-electrode bond structure
US20030098912A1 (en) * 2001-11-29 2003-05-29 Shigeru Hosokai Solid-state image pickup apparatus and fabricating method thereof
US20080003721A1 (en) * 2002-08-16 2008-01-03 Texas Instruments Incorporated Vibration-Assisted Method for Underfilling Flip-Chip Electronic Devices
US20040232533A1 (en) * 2003-05-21 2004-11-25 Olympus Corporation Semiconductor apparatus and fabricating method for the same
US6995469B2 (en) * 2003-05-21 2006-02-07 Olympus Corporation Semiconductor apparatus and fabricating method for the same
US20040232560A1 (en) * 2003-05-22 2004-11-25 Chao-Yuan Su Flip chip assembly process and substrate used therewith

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KR20010090563A (ko) 2001-10-18

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