US20010017516A1 - Production of structured electrodes - Google Patents

Production of structured electrodes Download PDF

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Publication number
US20010017516A1
US20010017516A1 US09/737,656 US73765600A US2001017516A1 US 20010017516 A1 US20010017516 A1 US 20010017516A1 US 73765600 A US73765600 A US 73765600A US 2001017516 A1 US2001017516 A1 US 2001017516A1
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layer
photoresist
forming
layers
width
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Ewald Gonther
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Ams Osram International GmbH
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Assigned to SIEMENS AKTIENGESELLSCHAFT reassignment SIEMENS AKTIENGESELLSCHAFT ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: GUNTHER, EWALD
Publication of US20010017516A1 publication Critical patent/US20010017516A1/en
Assigned to OSRAM OPTO SEMICONDUCTORS GMBH reassignment OSRAM OPTO SEMICONDUCTORS GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SIEMENS AKTIENGESELLSCHAFT
Priority to US10/850,799 priority Critical patent/US6885150B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes

Definitions

  • the present invention relates to a method for producing structured electrodes and especially organic electro-luminescent components with structured electrodes.
  • the components are used in displays and the like and further comprise structured metal electrodes,
  • the electrode is supported by multiple layers of varying widths and heights such that in combination with other supports, active organic layers may be tightly packed into a display area.
  • a possible arrangement includes the active layers layered below a top electrode.
  • Thin layers in particular those with a thickness of 1 nm to 10 ⁇ m, find diverse technological applications in for example: semiconductor production; and microelectronic, sensory and display technologies.
  • Production of the organic electro-luminescent components almost always includes the structuring of necessary layers; whereas the necessary structure sizes go from the sub- ⁇ -area to the entire substrate area.
  • the required component form varieties are practically unlimited.
  • OLEDs Organic Light Emitting Diodes
  • electro-luminescent diodes are predominately used in displays. Examples of such applications are set out in U.S. Pat. Nos. 4,356,429 and 5,247,190.
  • An example method of producing electrodes in general is set out in German patent registration reference 197 45 610.3.
  • the structure and production of OLED displays typically occurs as follows.
  • a substrate for example glass
  • the bottom electrode comprises for example indium-tin-oxide (ITO).
  • ITO indium-tin-oxide
  • the transparent bottom electrode as well as later formed top electrode (cathode) must be structured. Accordingly, both electrodes are usually structured in the form of parallel strip conductors.
  • the strip conductors of the bottom and top electrodes tend to run vertically with respect to each other,
  • the structuring of the bottom electrode occurs via a photolithographic process which includes wet chemical etching methods, the details of which are known to one skilled in the art.
  • the etched final structure which is obtainable with this method, is essentially limited by the photolithographic steps and the consistency of the bottom electrode.
  • pixel sizes as well as non-emitting spaces between the pixels can be realized to a size of few micrometers.
  • the lengths of the strip shaped strip conductors of the bottom electrode can be up to many centimeters.
  • emitting areas up to several square centimeters can also be produced.
  • the sequence of each emitting area can be regular (pixel-matrix-display) or variable (symbol presentations).
  • One or more organic layers are applied on a substrate, the substrate including the structured transparent bottom electrode.
  • These organic layers may comprise polymers, oligomers, and low molecular combinations or mixtures thereof.
  • polymers for example polyanilin, poly (p-phylenvinylen) and poly (2-methoxy-5-(2′ethyl) hexyloxy-p-phenylenvinylen
  • liquid phase processes are used (application of a solution by spin coating or blading); while for low molecular and oligomer combinations a gas phase deposition is preferred (Evaporation or Physical Vapor Deposition, PVD).
  • Examples of preferred low molecular layers include the following combinations transported by positive charge carriers: N,N′-to-(3-methylphenyl)-N,N′-to′(phenyl)benzidin (m-TPD), 4,4′,4′′-Tris-(N-3-methylphenyl-N-phenylamino)-triphenylamin (m-MTDATA) and 4,4′,4′′-Tris-(carbazol-9-yl)-triphenylamin (TCTA).
  • Hydroxychinoline-aluminium-III-salt (Alq) is used, for example as an emitter, which can be remunerated with suitable chromophores (Chincridon-derivates, aromatic hydrocarbons, etc.).
  • exemplary existing additional layers which influence the electro-optical characteristics as well as the long-term characteristics may be copper-phthalocyanine.
  • the entire thickness of the layer sequence can be between 10 nm and 10 ⁇ m, typically lying in the range of 50 to 200 nm.
  • the top electrode usually comprises a metal which is generally applied by gas phase deposition (thermic deposition, sputtering or cathode rays deposition).
  • Preferred compositions are base and therefore reactive metals, especially to water and oxygen, and include lithium, magnesium, aluminum and calcium as well as alloys of these metals.
  • the structure is obtained generally by the metal being applied through a mask opening.
  • a produced OLED-display may additional contain electro-optical features such as: UV-filters, polarization filters, anti-reflex-coatings, and (micro-cavities) known installations such as color conversion and color correctional filters.
  • electro-optical features such as: UV-filters, polarization filters, anti-reflex-coatings, and (micro-cavities) known installations such as color conversion and color correctional filters.
  • a hermetically sealed packaging may be provided by which the organic electro-luminescent displays are protected from external environmental influences such as humidity and mechanical strains.
  • thin film transistors for individual picture elements (pixel) can be present.
  • the width of a strip conductor can lie between 10 ⁇ m and several hundred micrometers, preferably between 100 and 300 ⁇ m.
  • the spaces between the metallic strip conductors as well as the spaces between the strip conductors of the transparent bottom electrode are only a few micrometers.
  • Established structuring techniques can not be used here because the existing active organic layers, i.e. the electro-luminescent materials, are not resistant to the necessary chemicals for such fine structuring.
  • shadow masking i.e. thin metals or segments with correspondingly formed openings for a desired structure
  • CVD or PVD chemical vapor deposition, physical vapor deposition
  • a lift off method for the production of structured metallizations by use of two separate photoresist layers is known from German reference DE-A44 01 590. Relatively thick metal structures on semiconductor components can be produced by this method.
  • European reference EP-A-0 732 868 shows a method for the production of an organic electro-luminescent display device. For this, on a multiple number of first display electrodes, electrically insulated overhanging structures are produced, which are built up from a first layer, for example of polyamide, and a second layer of for example SiO 2 . Afterwards, organic functional layers for different color components or also an only color component are applied in the areas between the electrically insulated structures by use of (shadows) masks, and following this the material for the second display electrode is precipitated on the organic functional layers and the electrically insulated structures.
  • a first layer for example of polyamide
  • a second layer of for example SiO 2 for example, organic functional layers for different color components or also an only color component are applied in the areas between the electrically insulated structures by use of (shadows) masks, and following this the material for the second display electrode is precipitated on the organic functional layers and the electrically insulated structures.
  • a method of producing structured electrodes for organic electro-luminescent displays comprising the steps of: forming a first layer on a substrate, said first layer having a first width and a first solvent rate; forming a protective layer over said first layer; forming a second layer on said protective layer, said second layer having a second width and a second solvent rate; etching said first and second layer with at least one solvent such that said second width is greater than said first width; and forming an electrode on said second layer.
  • the present invention may further comprises a method of producing structured electrodes for organic electro-luminescent displays, comprising the steps of: first forming a bottom electrode on a semiconductor substrate, second forming a first layer on said bottom electrode, said first layer having a first width and a first solvent rate; third forming an electrically insulating protective layer over said first layer; fourth forming a second layer on said protective layer, said second layer having a second width and a second solvent rate; fifth etching said first and second layer with at least one solvent such that said second width is greater than said first width; sixth forming an organic active layer on said second layer; and seventh forming a top electrode on said second layer.
  • the method may be applied where only one solvent is used and said first and second layers are reactive to said one solvent.
  • the diode comprises a substrate 1 , with a structured bottom electrode 2 layered thereon.
  • Electrode 2 may be transparent.
  • the electrode 2 may further comprise a non-planar geometry of glass, metal, silicon or polymer (in the form of a foil).
  • ITO Indium Tin Oxide
  • Atop the electrode 2 a first layer 3 is formed, the details of which are set out below.
  • a protective layer is formed on layer 3 (not shown).
  • the layer may be electrically insulating and comprise any properties known to one skilled in the art to accomplish the same. Likewise, the layer may prevent intermixing, as discussed below, and further comprise any suitable materials for the same.
  • a second layer 4 is formed.
  • an active organic layer 5 is formed and still further a top electrode 6 .
  • the top electrode may be a metal.
  • the first and second layers are formed such that the second layer overhangs the first layer.
  • a second active organic layer 5 and top electrode 6 may be formed—second formation,
  • the first and second active organic layers and top electrodes may be identical, different and/or related in composition and function.
  • the height and width of the second formation is engineered so as to maximize exposure of the active organic layer, in the top direction, from between adjacent structured electrode formations or along side at least one electrode formation.
  • two layers are preferably applied on a bottom electrode, itself positioned on a substrate.
  • the top electrode which preferably includes few escaping electrons, functions as an electron-receiving electrode, and comprises a metal or a metallic coating.
  • this electrode may also include a layered arrangement, wherein on a thin dielectrical layer ( ⁇ 5 nm), which for example comprises lithiumfluoride or aluminiumoxide, a metal or ITO layer as a (transparent) electrode.
  • the first lower electrode which can be a structured or applied layer, is not damaged by applying the second upper layer and as such between both layers a defined boundary is maintained.
  • the first and/or second layer preferably comprises an organic film developing material, such as a photoresist.
  • an essential characteristic of the embodiment includes a photolithographic process
  • at least two layers are selectively applied on a transparent bottom electrode, wherein the first layer comprises a resist or photoresist and the second layer comprises a positive or negative photoresist layer, and in the case where the first layer comprises a photoresist layer, the first layer with be exposed to radiation prior to the application of the second layer.
  • the layers are then structured in such a way that the active organic layers and top electrodes may be respectively applied and/or deposited on the second layer.
  • the layers are structured in a vertical direction with respect to the length of the bottom electrode.
  • the application of the active organic layers on the second layer can generally occur by thermic deposition processes as well as by solvent applications, such as spinning or blading following drying.
  • the first of the two layers must be overcoatable or overcoated with a protective layer.
  • a protective layer This means, that both layers can be applied on top of each other without a so called intermixing, i.e. applied coatings dissolvable in different solvents, such that the (photo)resist of the first layer is not affected by the solvent for the photoresist of the second layer. Accordingly, the applied first layer is preserved during application of the second layer.
  • a defined boundary is effected.
  • the first layer has a higher developing rate than the second layer.
  • the first layer dissolves faster with a developing solvent than the second layer. It is of advantage here, if both layers can be treated i.e. developed, with the same developer, preferably a watery-alkaline developer.
  • the lower layer electrical insulating organic and inorganic materials are used. Suitable inorganic materials include: silicondioxide; siliconnitrite; and aluminiumoxide. But the lower layer may for example also comprise an alkaline developing non-photo sensitive polyamide. It is advantageous if the lower layer is photosensitive and preferably comprises a positive photoresist on the basis of polyglutarimide or polybenzoxazol.
  • the upper layer is preferably also a photoresist.
  • This layer comprises a positive photoresist (Positivresist) of a Novolak/Diazochinon-basis or a negative photoresist (Negativresist) on the basis of Novolak/Integrater/photo acid.
  • a positive photoresist Polymethylmethacrylate (PMM)
  • PMM polymethylmethacrylate
  • an integratable polysilpheylensiloxanes may be used.
  • An amorphous carbon (a-C) or amorphous hydrogen carbon (a-C:H) serves, for example, as a coating material.
  • the second layer shows a larger structure width than the first layer (overhanging structure).
  • the second layer which consists preferably of a film developing organic material, is cross-linked, whereby the mechanical stability and the thermic resistance is elevated.
  • the overhanging structure will not be impaired by the cross-linking.
  • the overhanging of the second layer will be stabilized, so that larger areas, especially long borders, can be realized and the layer production can take place by solvent processes.
  • the stable overhanging then produces the structure of the following applied layers because at the border of the overhanging by, CVD- or PVD as well as from liquid phase processes, applied layers are cut off and therefore separated in to different zones, i.e. structured.
  • these are active organic layers, i.e. electro-luminescent layers, and electrodes.
  • the upper layer shows a wider structuring width after the structuring than the lower layer.
  • the difference in the structuring width is preferably between 1 and 10 ⁇ m.
  • the thickness of the lower layer is 0.1 to 30 ⁇ m and in particular 0.5 to 10 ⁇ m, and the thickness of the upper layer 0.1 to 30 ⁇ m and in particular 0.5 to 5 m.
  • ITO indium-tin-oxide
  • the glass sheet will be heated approximately 1 hour at a temperature of 250° C., then a commercial photoresist on the basis of polyglutarimide will be spun on (application for a duration of 10 seconds at 700 rotations/minute, then spun off for 30 seconds at 3000 rotations/minute).
  • the received layer will be dried for 15 minutes at 150° C. and then 30 minutes at 250° C. in a circulating air oven.
  • a streaming exposure at a wavelength of 248 nm (polychromatic) with a dose of 100 mJ/cm 2 is created afterwards.
  • a commercial photoresist on the basis of Novolak/Diazochinone (10:1 thinned with (1-mehtoxy-2-propyl)acetate) will be spun on at 2000 rotations/minute for 20 seconds. Both layers will be dried 60 seconds at 100° C., and afterwards with a radiation dose of 62 mJ/cm 2 at a wavelength of 365 nm (polychromatic) via lithographic masking. Then with a commercial developer which contains tetramethylammoniumhydroxyde, the structure is developed for 20 seconds. Afterwards the glass sheet will be put into a 100° C. preheated air circulating oven and annealed for 45 minutes at 230° C.; thereby cross-linking the upper photoresist.
  • the described developer develops twice more for 70 seconds; thereby an overhanging of the upper layer of approximately 5 ⁇ m is created.
  • the layer thickness of the lower layer is approximately 2.6 ⁇ m; both layers together are approx. 4.3 ⁇ m thick.
  • resist remnants will be removed for 90 seconds from the ITO surface by oxygen plasma (RF capacity: 70 W, gas flux: 30 sccm),
  • a 100 nm thick layer of magnesium will be applied on the active surface of the display by thermic deposition (deposition rate: 1 nm/s, pressure:10 ⁇ 5 mbar), Interrupting the vacuum, a 100 nm thick layer of silver nm will be applied, also by vapor deposition, on the active display area (deposition rate: 1 nm/s, pressure: 10 ⁇ 5 mbar).
  • the resulting display flashes are clearly visibly in the day light and the emission color is greenish-yellow.
  • a 1% solvent of an electro-luminescent polymer on the basis of fluorines in Xylole is spun on (4000 rotations/min, 30 s) a glass sheet with a produced layer build up corresponding to example 1. Afterwards, it is dried for 60 seconds at 85° C. Without the use of masking, a 100 nm thick layer of calcium will be applied on the active area of the display by vapor deposition (deposition rate: 1 nm/s, pressure: 10 ⁇ 5 mbar). Without interrupting the vacuum, a 100 nm thick layer of silver will also be applied on the active display area by vapor deposition (deposition rate; 1 nm/s, pressure: 10 ⁇ 5 mbar).

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
US09/737,656 1998-06-18 2000-12-18 Production of structured electrodes Abandoned US20010017516A1 (en)

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CN (1) CN100385704C (ja)
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US20030214232A1 (en) * 2002-05-07 2003-11-20 Ewald Guenther Uniform deposition of organic layer
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US6699728B2 (en) 2000-09-06 2004-03-02 Osram Opto Semiconductors Gmbh Patterning of electrodes in oled devices
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US20030209979A1 (en) * 2002-05-07 2003-11-13 Osram Opto Semiconductors Gmbh Encapsulation for electroluminescent devices
US20030214232A1 (en) * 2002-05-07 2003-11-20 Ewald Guenther Uniform deposition of organic layer
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TW411726B (en) 2000-11-11
CN1305641A (zh) 2001-07-25
EP1095413A1 (de) 2001-05-02
CN100385704C (zh) 2008-04-30
JP2002518813A (ja) 2002-06-25
CA2335317A1 (en) 1999-12-23
EP1095413B1 (de) 2009-08-05
US6885150B2 (en) 2005-04-26
WO1999066568A1 (de) 1999-12-23

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