US11018283B2 - Method of producing optoelectronic semiconductor components and an optoelectronic semiconductor component - Google Patents

Method of producing optoelectronic semiconductor components and an optoelectronic semiconductor component Download PDF

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US11018283B2
US11018283B2 US16/335,632 US201716335632A US11018283B2 US 11018283 B2 US11018283 B2 US 11018283B2 US 201716335632 A US201716335632 A US 201716335632A US 11018283 B2 US11018283 B2 US 11018283B2
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pixels
layer sequence
semiconductor layer
conversion unit
semiconductor
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US20190312184A1 (en
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Isabel Otto
Alexander F. Pfeuffer
Britta Göötz
Norwin Von Malm
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Osram Oled GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Definitions

  • This disclosure relates to a method of producing optoelectronic semiconductor component and an optoelectronic semiconductor component.
  • a method of producing optoelectronic semiconductor components including providing a primary light source having a carrier and a semiconductor layer sequence mounted thereon that generates primary light (B), wherein the semiconductor layer sequence is structured into a plurality of pixels that can be driven electrically independently of each other, and the carrier comprises a plurality of control units that drive the pixels, providing at least one conversion unit adapted to convert the primary light (B) into at least one secondary light (G, R), wherein the conversion unit is grown continuously from at least one semiconductor material, structuring the conversion unit, wherein portions of the semiconductor material are removed in accordance with the pixels, and applying the conversion unit to the semiconductor layer sequence so that the remaining semiconductor material is uniquely assigned to a portion of the pixels.
  • an optoelectronic semiconductor component including a primary light source comprising a carrier and a semiconductor layer sequence mounted thereon that generate primary light (B), and at least one conversion unit of at least one semiconductor material adapted to convert the primary light (B) into at least one secondary light (G, R), wherein the semiconductor layer sequence and the conversion unit are produced separately from each other and are not grown together, the semiconductor layer sequence is structured into a plurality of pixels that can be controlled electrically independently of each other, the carrier comprises a plurality of control units that drives the pixels, no conversion unit is assigned to some of the pixels so that selected pixels emit the primary light (B), and exactly one conversion unit each is assigned to remaining pixels, a plurality of pixels emitting different colors are combined to form a display area that is adjustable to emit light of different colors, and a light path between the carrier and a light-exit side of the conversion unit facing away from the carrier is free of organic materials.
  • FIGS. 1A-1F, 2A-2B, 3A-3C, and 6A-6B are schematic sectional representations of process steps of examples of methods described for the production of optoelectronic semiconductor components.
  • FIGS. 4, 5 and 7 are schematic sectional views of examples of optoelectronic semiconductor components.
  • the method produces optoelectronic semiconductor components.
  • Several of the semiconductor components can be produced together in a wafer composite.
  • the optoelectronic semiconductor components are adapted to generate color-adjustable light.
  • the produced semiconductor components serve, for example, as display devices, as displays or in spotlights with adjustable emission characteristics, for example, in motor vehicles.
  • the method may comprise the step of providing a primary light source.
  • the primary light source generates electromagnetic radiation, especially primary light, via electroluminescence.
  • Primary light is preferably blue light, for example, with a wavelength of maximum intensity of at least 420 nm or 435 nm and/or at most 480 nm or 460 nm.
  • the primary light source may alternatively or additionally generate electromagnetic radiation in other wavelength ranges.
  • the primary light source may produce ultraviolet radiation alternatively or in addition to blue light, for example, with a wavelength of maximum intensity at 365 nm minimum and/or 420 nm maximum.
  • the primary light source may produce green light alternatively or in addition to blue light, for example, with a wavelength of maximum intensity at 485 nm minimum and/or 575 nm maximum.
  • the primary light source may comprise a carrier.
  • the carrier contains a large number of control units.
  • the carrier is a silicon-based semiconductor carrier comprising transistors and/or switching units and/or control units.
  • the control units can be produced in CMOS technology.
  • the carrier is preferably based on a semiconductor material such as silicon or germanium.
  • a semiconductor layer sequence may be attached to the carrier.
  • the semiconductor layer sequence is adapted to generate the primary radiation.
  • the semiconductor layer sequence comprises at least one active zone.
  • the semiconductor layer sequence is preferably based on a III-V compound semiconductor material.
  • the semiconductor material is a nitride compound semiconductor material such as AlnIn1-n-mGamN or a phosphide compound semiconductor material such as AlnIn1-n-mGamP or also an arsenide compound semiconductor material such as AlnIn1-n-mGamAs or such as AlnIn1-n-mGamAskP1-k, wherein: 0 ⁇ n ⁇ 1, 0 ⁇ m ⁇ 1 and n+m ⁇ 1 and 0 ⁇ k ⁇ 1.
  • 0 ⁇ n ⁇ 0.8, 0.4 ⁇ m ⁇ 1 and n+m ⁇ 0.95 and 0 ⁇ k ⁇ 0.5 applies to at least one layer or to all layers of the semiconductor layer sequence.
  • the semiconductor layer sequence may contain dopants and additional components.
  • dopants and additional components For the sake of simplicity, however, only the essential components of the crystal lattice of the semiconductor layer sequence are indicated, i.e. Al, As, Ga, In, N or P, even if they may be partially replaced and/or supplemented by small quantities of other substances.
  • the semiconductor layer sequence may be structured into a plurality of electrically independently controllable pixels in plan view. This structuring is carried out in particular by removing material from part of the semiconductor layer sequence.
  • the semiconductor layer sequence is structured by etching. Preferably, material is removed from the semiconductor layer sequence between adjacent pixels.
  • the pixels may be electrically contacted independently of each other and can be controlled independently of each other.
  • the independent control is effected via the control units in the carrier.
  • one of the control units of the carrier is assigned to each of the pixels and vice versa.
  • the method may include the step of providing one or more conversion units. At least one conversion unit is adapted to partially or completely absorb the primary light and convert it into at least one secondary light. The secondary light is generated by photoluminescence from the primary light.
  • the conversion unit or all conversion units may be grown contiguously from at least one semiconductor material.
  • each conversion unit is epitaxially grown.
  • the conversion units can be based on the same semiconductor materials as the semiconductor layer sequence of the primary light source, or on different semiconductor materials.
  • the conversion units that generate the secondary light may each comprise a single quantum well structure or, preferably, a multiple quantum well structure.
  • the conversion units can be composed of a sequence of several semiconductor layers.
  • a composition of the conversion units prefers not to change or not to change significantly.
  • the semiconductor layers of the conversion units continue over the entire respective conversion unit, preferably in an unchanged composition within the manufacturing tolerances.
  • the conversion units may be structured. During structuring, the semiconductor material from which the conversion units are made is removed in subareas. It is preferred to completely remove the semiconductor material in the sub-areas so that, seen from above, recesses and/or holes are created in the conversion units. Furthermore, it is possible that only islands of the semiconductor material of the conversion units remain, which are not interconnected by semiconductor material of the respective conversion unit.
  • Structuring of the at least one conversion unit may take place according to the pixels of the semiconductor layer sequence.
  • the same grid is used to structure the semiconductor material used to structure the semiconductor layer sequence into the pixels.
  • the structured conversion unit may be applied to the semiconductor layer sequence. This results in an assignment of the remaining semiconductor material of the conversion layers after structuring to a part of the pixels. This assignment is preferably unambiguous.
  • the method may be established to produce optoelectronic semiconductor components and may comprise the following steps, for example, in the given order:
  • a primary light source having a carrier and a semiconductor layer sequence attached to generate primary light
  • the semiconductor layer sequence in plan view is structured into a plurality of electrically independently controllable pixels
  • the carrier comprises a plurality of driving units that control the pixels
  • the conversion unit adapted to convert the primary light into at least one secondary light, wherein the conversion unit is grown continuously from at least one semiconductor material
  • the primary light source may be constructed as specified in DE 10 2014 101 896 A1 or DE 10 2014 105 999 A1, the subject matter of which with regard to the primary light source is incorporated herein by reference.
  • Such primary light sources comprising a carrier with control units and a semiconductor layer sequence structured in pixels are also referred to as microlight emitting diodes, or micro LEDs for short.
  • Micro LEDs are mostly monochromatic emitting components. To produce a colored image with three monochromatic micro LEDs, one for red light, one for green light and one for blue light, the emitted light by the micro LEDs can be mixed and superimposed via a prism. It is also possible to generate a color image directly from the emission of individual pixels, wherein individual different colors emitting pixels of a semiconductor material can either be placed side by side or stacked vertically on top of each other. However, such arrangements are either very time-consuming to produce due to the fact that individual pixels have to be placed individually, or have additional optical components.
  • a semiconductor component in the form of a micro LED can be efficiently produced, wherein the individual pixels result from a single semiconductor layer sequence.
  • compact and efficiently producible pixels can be generated that emit light in different colors. This is achieved in particular by structuring the conversion units according to the division of the semiconductor layer sequence into pixels. Both the conversion units and the semiconductor layer sequence can be produced at wafer level.
  • the conversion units By generating different colors by photoluminescence in the conversion units, it is possible to use a monochromatically emitting primary light source in the form of a micro LED.
  • the arrangement of electrical contacts and passivation layers is comparatively simple and efficient compared to other methods.
  • the use of epitaxially grown semiconductor layers for the conversion units enables generation of a layer stack containing several layers emitting in different wavelengths.
  • semiconductor layers for the conversion units it is possible to achieve a high degree of absorption, especially for blue light so that a local full conversion of the primary light can be achieved.
  • spectrally narrow-band spectra of the respective photoluminescence radiation can be obtained. This opens up a wide gamut range in display applications, for example.
  • a first conversion unit converts blue light into green light
  • a second conversion unit converts blue light into red light. If the primary light source emits ultraviolet radiation and little or no blue light, a third conversion unit is preferred to generate blue light.
  • the semiconductor layers of the conversion units may be grown on top of each other on a common growth substrate.
  • the conversion units can form a common, coherently grown semiconductor layer sequence.
  • One or more of the conversion units may be structured on the common growth substrate.
  • the structuring is, for example, photolithographically done and by etching. It is preferable to structure the conversion units one after the other in time.
  • the compound of the conversion units and the common growth substrate may be attached to the semiconductor layer sequence, preferably by wafer bonding.
  • the growth substrate is then removed, for example, by laser treatment, etching and/or mechanical methods such as grinding.
  • at least one further conversion unit is structured, wherein this structuring takes place at the semiconductor layer sequence of the primary light source.
  • conversion units may be applied to the semiconductor layer sequence of the primary light source.
  • Each of the conversion units is grown on its own growth substrate.
  • the conversion units thus each represent a separately produced, separate semiconductor layer sequence.
  • the conversion units may be structured on the respective growth substrate. This makes it possible to avoid structuring the conversion units directly on the semiconductor layer sequence.
  • planarization layer is made of a radiation-permeable material and preferably consists of inorganic materials, for example, an oxide such as silicon oxide or aluminium oxide or a nitride such as silicon nitride or aluminium nitride.
  • the planarization layer may mechanically connect individual island-like areas of the conversion units resulting from the structuring of the semiconductor material.
  • a material for the planarization layer can be located directly on the semiconductor material of the conversion units.
  • a coating, especially an optically functionalized coating such as an optical insulation or a mirror is located between the material of the planarization layer and the semiconductor material of the conversion units.
  • the planarization layer may partially or completely cover a side of the conversion unit facing away from the associated growth substrate.
  • the planarization layer can cover this side permanently or only temporarily during certain producing steps.
  • the conversion units may each be grown on separate growth substrates. Subsequently, the conversion units may be attached to each other before the growth substrates are detached, in particular by direct bonding with or without an intermediate layer. This creates a layer sequence from the conversion units.
  • the sequence of layers from the conversion units may be structured, where in particular, only one of the conversion units is structured. Subsequently, this layer sequence is attached to the semiconductor layer sequence of the primary light source. The remaining growth substrate can be removed then. The previously unstructured conversion unit can then be structured.
  • the conversion units may be attached to each other or the conversion units may be attached to the semiconductor layer sequence by wafer bonding.
  • This can be wafer bonding without an intermediate layer, in particular so-called direct bonding or anodic bonding.
  • a particularly oxidic or nitridic intermediate layer can be used and wafer bonding is eutectic bonding, glass bonding or adhesive bonding.
  • a light path between the carrier and a light exit side of the conversion units facing away from the carrier may be free of organic material.
  • light may only pass through inorganic materials within the semiconductor component. This results in a long service life and high power densities, especially of blue light, can be achieved.
  • pixels may not be assigned to any of the conversion units.
  • the primary light is emitted from these pixels without wavelength conversion.
  • exactly one of the conversion units may be assigned to each of the other pixels. This means that there are no conversion units stacked on top of each other at the pixels.
  • pixels that emit the primary light without wavelength conversion are present that emit blue light.
  • pixels may be present that emit the primary light without wavelength conversion emitting green light.
  • blue and green light are generated by an electrically pumped stack of layers and red light is generated by an optically pumped semiconductor layer.
  • Display areas are also referred to as colored pixels.
  • the display areas can emit light in different colors.
  • Adjacent pixels and/or adjacent display areas may be optically isolated from each other by a partition wall.
  • the partition wall can be composed of one or more opaque materials.
  • the partition may be absorbent or reflective to the radiation produced.
  • the partition wall may extend completely through the conversion unit. It is possible for the partition wall to be flush with the semiconductor layer sequence or partially or completely penetrate the semiconductor layer sequence. If the intermediate wall protrudes into the semiconductor layer sequence, the intermediate wall is, for example, made of an electrically insulating material or electrically insulating towards the semiconductor layer sequence. Alternatively, it is possible that, for example, an n-conducting side of the semiconductor layer sequence is electrically contacted via the partition walls so that a common electrical contact across the pixels can be realized through the partition wall.
  • the semiconductor layer sequence may be continuous and contiguous and preferably extends seamlessly across all pixels. Alternatively, the semiconductor layer sequence may be completely removed in areas between adjacent pixels and/or display areas so that the pixels or display areas are realized by islands out of the semiconductor layer sequence.
  • At least one mirror layer may be applied to one side of the conversion units facing the semiconductor layer sequence.
  • the one or more mirror layers are impermeable or largely impermeable to the secondary light generated in the associated conversion unit.
  • the mirror layers are preferably used to reflect this secondary light.
  • the mirror layers are transparent to the primary light and realized by dichroic mirrors.
  • the filter layer is impermeable to primary light and permeable to secondary light.
  • the filter layer can absorb or reflect the primary light.
  • the filter layer can be designed as an anti-reflective layer for the secondary light.
  • the filter layer and/or mirror layer may completely cover the associated conversion unit. Alternatively, the associated conversion unit is only partially covered by the filter layer and/or mirror layer.
  • At least one of the conversion units or all conversion units and/or the semiconductor layer sequence may have a thickness of at least 1 ⁇ m or 2 ⁇ m and/or a thickness of at most 15 ⁇ m or 10 ⁇ m or 6 ⁇ m. In other words, the conversion units and the semiconductor layer sequence are thin.
  • the pixels may have an average diameter of at least 2 ⁇ m or 3 ⁇ m or 10 ⁇ m in plan view.
  • the mean diameter is at most 300 ⁇ m or 200 ⁇ m or 80 ⁇ m.
  • these values apply not only to the mean diameter, but also to a mean edge length of the pixels if they are square or rectangular in shape in plan view.
  • a distance between adjacent pixels may be at least 0.3 ⁇ m or 0.5 ⁇ m or 1 ⁇ m and/or at most 10 ⁇ m or 6 ⁇ m or 3 ⁇ m.
  • the distance between the pixels shall preferably not exceed 25% or 10% or 3% of the mean diameter of the pixels.
  • the finished semiconductor device may comprise at least 10 or 100 or 1000 of the pixels. Alternatively or additionally, the number of pixels shall not exceed 108 or 107 or 106 or 105. The same may apply to the number of display areas.
  • the semiconductor device is preferably produced by methods as indicated in conjunction with one or more of the above examples. Features for the methods are therefore also disclosed for the semiconductor device and vice versa.
  • the optoelectronic semiconductor device may comprise a primary light source comprising a carrier and a semiconductor layer sequence attached to generate primary light.
  • the semiconductor device further comprises at least one conversion unit of at least one semiconductor material, the conversion unit being adapted to convert the primary light into at least one secondary light by photoluminescence.
  • the semiconductor layer sequence and the conversion unit are produced separately from each other and are not grown together. Seen from above, the semiconductor layer sequence is structured into a large number of electrically independently controllable pixels.
  • the carrier comprises a large number of control units that control the pixels and are preferably available in a 1 : 1 assignment to the pixels. Some of the pixels are not assigned a conversion unit so that these pixels emit the primary light and the remaining pixels are each assigned exactly one conversion unit.
  • Several pixels emitting different colors are combined to form a display area designed to emit light that can be adjusted in terms of color. Furthermore, a light path between the carrier and a light exit side of the conversion unit facing away from the carrier is free of organic materials.
  • FIGS. 1A-1F schematically illustrate a method of producing optoelectronic semiconductor components 1 .
  • a growth substrate 5 is provided.
  • Growth substrate 5 for example, is a GaAs substrate.
  • Two semiconductor materials 31 , 41 are grown on growth substrate 5 for two conversion units 3 , 4 .
  • a second semiconductor material 41 is grown to generate red light and then a first semiconductor material 31 to generate green light.
  • the two semiconductor materials 31 , 41 are based on InGaAlP.
  • the second semiconductor material 41 that generates red light is preferably based on InGaAlP.
  • the first semiconductor material 31 can also be based on InGaN, grown, for example, on a sapphire substrate. Such a translucent sapphire substrate can also remain attached to the semiconductor material 31 , in contrast to FIGS. 1A-1F .
  • the semiconductor materials 31 , 41 each consist of several layers and preferably comprise a multiquantum well structure adapted to generate green or red secondary light by photoluminescence.
  • a multiquantum well structure may comprise ten or more quantum well structures.
  • the multiquantum well structure in the first semiconductor material 31 may comprise twenty or more quantum well structures.
  • the multiquantum well structure in the first semiconductor material 31 may comprise, for example, one hundred or fewer quantum well structures.
  • the multiquantum well structure in the second semiconductor material 41 may comprise twenty or more quantum well structures.
  • the multiquantum well structure in the second semiconductor material 41 may, for example, comprise one hundred or fewer quantum well structures.
  • the number of quantum well structures in the first and/or second semiconductor material is between twenty and fifty quantum well structures.
  • the number of quantum well structures in the first semiconductor material 31 and the number of quantum well structures in the second semiconductor material 41 may be different.
  • the number of quantum well structures in the first and/or second semiconductor material 31 , 41 may be greater than the number of quantum well structures in the semiconductor layer sequence 22 of the primary light source 2 .
  • the process step of FIG. 1B shows that the first semiconductor material 31 is structured.
  • the first semiconductor material 31 is completely removed in areas, in particular by etching so that the second semiconductor material 41 is exposed in areas. Otherwise, the second semiconductor material 41 remains unaffected by this structuring.
  • the structuring of the first semiconductor material 31 is carried out, for example, by wet chemical or dry chemical etching.
  • the individual, remaining island-shaped regions of the first semiconductor material 31 correspond to the size of pixels 24 of the semiconductor component 1 .
  • the island-shaped regions have, for example, an edge length of at least 3 ⁇ m and/or at most 200 ⁇ m. Seen from above, these areas are square, rectangular, round or hexagonal. These areas can be cartesian in a rectangular pattern or hexagonal. The same applies to the second semiconductor material 41 and also to all other embodiments.
  • a planarization layer 73 is deposited over the entire surface.
  • the planarization layer 73 is preferably made of an electrically insulating dielectric material such as silicon dioxide.
  • the planarization layer 73 fills gaps between the island-like, remaining regions of the first semiconductor material 31 so that a total layer with a constant thickness is formed.
  • the planarization layer 73 firmly connects the island-shaped regions of the first semiconductor material 31 with each other.
  • the planarization layer 73 forms together with the first semiconductor material 31 the first conversion unit 3 .
  • the planarization layer 73 has the same thickness as the first semiconductor material 31 so that the first semiconductor material 31 and the planarization layer 73 are flush with each other, directing away from the growth substrate 5 .
  • FIG. 1 C 2 illustrates that a thickness of the planarization layer 73 is greater than a thickness of the first semiconductor material 31 .
  • the first semiconductor material 31 is completely covered by the planarization layer 73 .
  • the planarization layer 73 together with the first semiconductor material 31 again has a constant thickness.
  • This thickness is at least 5 ⁇ m and/or at most 12 ⁇ m for example, with the planarization layer 73 preferably exceeding the first semiconductor material 31 by at most 5 ⁇ m or 2 ⁇ m or 1 ⁇ m. This also applies preferentially to all other examples.
  • FIG. 1D shows that the composite of FIG. 1 C 1 , or alternatively FIG. 1 C 2 , is attached to a primary light source 2 .
  • the composite of FIG. 1 C 1 can directly connect to a semiconductor layer sequence 22 of the primary light source 2 as shown in FIG. 1D .
  • the planarization layer 73 from FIG. 1 C 2 can be used as an adhesion promoter.
  • the primary light source 2 also has a carrier 21 .
  • the carrier 21 contains a large number of control units 23 .
  • the carrier 21 is preferably based on silicon, and the control units 23 are produced in CMOS technology in the carrier 21 .
  • the semiconductor layer sequence 22 is based on AlInGaN and is designed to generate blue light.
  • the semiconductor layer sequence 22 is divided into a number of pixels 24 . Each of the pixels 24 is preferably assigned to exactly one of the control units 23 and vice versa. Separation areas 26 are optionally located between adjacent pixels 24 . Electrical and/or optical isolation of the individual pixels 24 from each other can be achieved via the separation areas 26 .
  • the semiconductor layer sequence 22 is only partially interrupted by the separation areas 26 , for example, in form of unfilled or filled trenches, and extends as a continuous layer over the entire carrier 21 .
  • the pixels 24 are, for example, rectangular, square, round or hexagonal.
  • the growth substrate 5 from FIG. 1D is removed.
  • the growth substrate 5 is removed by grinding, polishing, wet or dry etching, laser lifting or combinations thereof.
  • the second semiconductor material 41 is structured in the same way as the first semiconductor material 31 , wherein the structuring is performed on the semiconductor layer sequence 22 .
  • the semiconductor layer sequence 22 is not affected by this structuring.
  • a further planarization layer 73 is also applied.
  • the further planarization layer 73 forms together with the second semiconductor material 41 the second conversion unit 4 .
  • the island-shaped remaining areas of the two semiconductor materials 31 , 41 have the same size as the areas of the semiconductor layer sequence 22 for the pixels 24 .
  • a third of the pixels 24 is free of the conversion units 3 , 4 in the case of an RGB unit or a quarter of the pixels 24 is free of the conversion units 3 , 4 in-an RGGB unit so that a primary light B, preferably blue light, is emitted directly from these pixels 24 .
  • Only one of the conversion units 3 , 4 is assigned to each of the remaining pixels 24 .
  • secondary light G and second secondary light R are generated via the conversion units 3 , 4 , wherein green and red light are preferred.
  • the primary light B is completely or almost completely absorbed.
  • Three pixels 24 emitting different colors, are combined to form a display area 6 , also known as a pixel.
  • the pixels are adapted to emit light of different colors, which is composed of the primary light B and the secondary light G, R.
  • the individual display areas 6 each have exactly one area for red, green and blue light, thus forming an RGB unit. There can also be two areas for green light so that an RGGB unit with four pixels 26 is formed, or an additional unit for yellow light for an RGBY unit. It is also possible to add a fluorescent unit to produce white light, resulting in an RGBW unit. White or yellow light is generated in a not shown third conversion unit stacked above the first and second conversion units 3 , 4 .
  • the display areas 6 preferably comprise each exactly three or four of the pixels 26 .
  • An ultraviolet-emitting semiconductor layer sequence can also be present as primary source 2 provided with three phosphors for red, blue and green and optionally for yellow or white, wherein the individual phosphor areas can be preferably excited independently of each other.
  • the conversion units 3 , 4 do not overlap at the semiconductor layer sequence 22 , the conversion units 3 , 4 can be applied in any order.
  • planarization layers 73 of FIG. 1F can also be used as additional or alternative passivation and/or encapsulation.
  • the planarization layers 73 , the optional intermediate layer and the passivation and/or encapsulation can also be made of silicon nitride, aluminum oxide, tantalum nitride, transparent oxides or nitrides of Zn, Sn, Ta, Ga, Ni, Zr, Hf, Ti or rare earth metals.
  • the two planarization layers 73 can be made of the same material or of different materials.
  • emission of primary radiation from the semiconductor layer sequence 22 can be used by certain actively operated pixels 24 to locally cure or solubilize photoresists. This is, for example, done when structuring the conversion units 3 , 4 directly on the semiconductor layer sequence 22 as shown in FIG. 1F .
  • the conversion units 3 , 4 or the semiconductor layer sequence 22 can each have a roughening on a side facing away from the carrier 21 . It may be possible to apply additional protective layers to such a roughening, which can be planarized optionally. Furthermore, the planarization layers 73 or at least one planarization layer 73 remote from the carrier 21 can be roughened optionally.
  • the semiconductor materials 31 , 41 are grown on two different growth substrates 5 . Subsequently, as shown in FIG. 2B , the semiconductor materials 31 , 41 are bonded together and one of the growth substrates 5 is removed.
  • semiconductor materials 31 , 41 are grown on separate growth substrates 5 and also structured on growth substrates 5 as shown in FIG. 3A .
  • the planarization layers 73 are applied subsequent as shown in FIG. 3B .
  • the partition walls 25 a , 25 b can be created by structuring the conversion units 3 , 4 , for example, by metallic or dielectric mirroring of etched flanks of the semiconductor materials 31 , 32 before generating the corresponding planarization layer 73 .
  • the partition walls 25 a , 25 b can also be created after generating the planarization layer 73 , for example, by etching trenches and subsequent filling with reflective or absorbing material.
  • Partition walls 25 a can be limited to conversion units 3 , 4 .
  • the partitions 25 a do only reach the semiconductor layer sequence 22 , but do not reach into the semiconductor layer sequence 22 .
  • partition walls 25 b generated subsequently after structuring the conversion units 3 , 4 they can reach into the semiconductor layer sequence 22 and completely penetrate the semiconductor layer sequence 22 , optionally together with the optionally available separating regions 26 .
  • the partition walls 25 a , 25 b are made of a metal. If the partitions 25 b are made of an electrically conductive material, the partitions 25 b especially prefer not to reach a non-drawn metallization between the pixels 24 to avoid electrical short circuits. Alternatively, an electrical contacting of the semiconductor layer sequence 22 can be achieved via the partition walls 25 a , 25 b on a side facing away from the carrier 21 .
  • the partition walls 25 a , 25 b can also be metal spacers or optical separations generated by photo technology.
  • individual pixels are structured on 24 p sides, for example, in particular on a side facing the carrier 21 .
  • the semiconductor layer sequence 22 between adjacent pixels 24 can be partially removed.
  • the n-conducting GaN can be removed from the n side to this n contact then, especially before the conversion units 3 , 4 are applied. All conversion units 3 , 4 can also be applied first, structured and planarized, and a trench or recesses between the individual pixels 24 is only subsequent structured, especially lithographically. These trenches or recesses filled with a reflective or absorbent material can extend into the n-GaN.
  • partition walls 25 a , 25 b can also be present in all other examples.
  • the partition walls 25 a of the left half of the picture in FIG. 4 or only the partition walls 25 b of the right half of the picture are preferred.
  • additional mirror layers 71 and/or filter layers 72 are provided.
  • the mirror layers 71 for example, dichroic and/or dielectric mirrors are each located on a side of the associated conversion unit 3 , 4 facing the primary light source 2 .
  • the mirror layers 71 are directly attached to the semiconductor material 31 , 41 .
  • the mirror layers 71 ensure that the secondary light generated from the primary light does not return to the semiconductor layer sequence 22 .
  • it is possible that the mirror layer 71 is generated continuously directly at the semiconductor layer sequence 22 and not at the first or second semiconductor material 31 , 41 .
  • filter layers 72 are available.
  • the filter layers 72 prevent unconverted, in particular blue primary light from exiting the individual pixels 24 .
  • the filter layer 72 can be applied continuously over several of the pixels 24 or be limited to individual pixels 24 .
  • FIGS. 6A and 6B illustrate a method of producing the partition walls 25 a .
  • a raw material layer 27 is applied to the structured semiconductor material 31 continuously and conformally with a constant thickness.
  • the raw material layer 27 is a metal layer.
  • the raw material layer 27 is applied, for example, by chemical vapor deposition, physical vapor deposition, atomic layer deposition or sputtering.
  • an anisotropic etching such as dry etching takes place so that the raw material layer 27 remains only on the flanks of the semiconductor material 31 and thus forms the partition walls 25 a.
  • FIGS. 6A and 6B can, for example, be additionally performed in the process steps of FIG. 1B or 3A or 1F .
  • pixels 24 are present that emit a first primary light B 1 without a wavelength conversion.
  • pixels 24 are present that emit a second primary light G 2 without wavelength conversion.
  • the first primary light B 1 is blue light
  • the second primary light G 2 is green light. Blue and green light are generated by electric pumping.
  • pixels 24 that emit secondary light R 1 for example, red light. The red light is generated by the second conversion units 4 .
  • the semiconductor layer sequence 22 has a first semiconductor layer sequence 22 a that generates the second primary light G 2 and a second semiconductor layer sequence 22 b that generates the first primary light B 1 .
  • the layer sequence directed away from the carrier 21 in the semiconductor layer sequence 22 is, for example, as follows: first semiconductor layer sequence 22 a comprising a p-doped layer, for example, p-GaN, an active layer that generates green light, an n-doped layer, for example, n-GaN, tunnel contact, second semiconductor layer sequence 22 b comprising a p-doped layer, for example, p-GaN, an active layer that generates blue light, an n-doped layer, for example, n-GaN.
  • the p-doped layer and the active layer that generate green light of the first semiconductor layer sequence 22 a are removed.
  • the n contact connects to the upper n-doped layer of the second semiconductor layer sequence 22 b.
  • the n contact connects to the lower n-doped layer of the first semiconductor layer sequence 22 a .
  • the not shown n contact is led out laterally.
  • the p-doped layer and the active layer that generate green light of the first semiconductor layer sequence 22 a can be removed.
  • the n contact connects to the upper n-doped layer of the second semiconductor layer sequence 22 b .
  • the p-doped layer and the active layer can remain to generate green light and can be used to excite a conversion unit 4 .
  • the n contact connects to the lower n-doped layer of the first semiconductor layer sequence 22 a.

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US11557700B2 (en) 2023-01-17
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US20210210661A1 (en) 2021-07-08
DE102016220915A1 (de) 2018-04-26
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US20230120107A1 (en) 2023-04-20
DE112017005374A5 (de) 2019-07-11
WO2018077957A1 (de) 2018-05-03

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